DE60118061D1 - Nichtflüchtiger Halbleiterspeicher - Google Patents
Nichtflüchtiger HalbleiterspeicherInfo
- Publication number
- DE60118061D1 DE60118061D1 DE60118061T DE60118061T DE60118061D1 DE 60118061 D1 DE60118061 D1 DE 60118061D1 DE 60118061 T DE60118061 T DE 60118061T DE 60118061 T DE60118061 T DE 60118061T DE 60118061 D1 DE60118061 D1 DE 60118061D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor memory
- volatile semiconductor
- volatile
- memory
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/78391—Field effect transistors with field effect produced by an insulated gate the gate comprising a layer which is used for its ferroelectric properties
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000182643A JP2002009255A (ja) | 2000-06-19 | 2000-06-19 | 不揮発半導体記憶装置 |
| JP2000182643 | 2000-06-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60118061D1 true DE60118061D1 (de) | 2006-05-11 |
| DE60118061T2 DE60118061T2 (de) | 2006-08-17 |
Family
ID=18683366
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60118061T Expired - Lifetime DE60118061T2 (de) | 2000-06-19 | 2001-06-19 | Nichtflüchtiger Halbleiterspeicher |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6455883B2 (de) |
| EP (1) | EP1168454B1 (de) |
| JP (1) | JP2002009255A (de) |
| KR (1) | KR100655028B1 (de) |
| CN (1) | CN1181553C (de) |
| DE (1) | DE60118061T2 (de) |
| TW (1) | TW511275B (de) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004172355A (ja) * | 2002-11-20 | 2004-06-17 | National Institute Of Advanced Industrial & Technology | 強誘電体メモリアレイ |
| JP4831562B2 (ja) * | 2005-06-23 | 2011-12-07 | 富士通株式会社 | 強誘電体メモリ装置 |
| FR2973553B1 (fr) * | 2011-03-31 | 2013-03-29 | Thales Sa | Procédé de mise en oeuvre d'une jonction tunnel ferroelectrique, dispositif comprenant une jonction tunnel ferroelectrique et utilisation d'un tel dispositif |
| US11502103B2 (en) * | 2018-08-28 | 2022-11-15 | Intel Corporation | Memory cell with a ferroelectric capacitor integrated with a transtor gate |
| US11018239B2 (en) * | 2019-04-13 | 2021-05-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US11980037B2 (en) | 2020-06-19 | 2024-05-07 | Intel Corporation | Memory cells with ferroelectric capacitors separate from transistor gate stacks |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5578846A (en) * | 1995-03-17 | 1996-11-26 | Evans, Jr.; Joseph T. | Static ferroelectric memory transistor having improved data retention |
| KR0141160B1 (ko) * | 1995-03-22 | 1998-06-01 | 김광호 | 강유전체 메모리 장치 및 그 제조방법 |
-
2000
- 2000-06-19 JP JP2000182643A patent/JP2002009255A/ja active Pending
-
2001
- 2001-06-13 US US09/879,081 patent/US6455883B2/en not_active Expired - Fee Related
- 2001-06-19 KR KR1020010034609A patent/KR100655028B1/ko not_active IP Right Cessation
- 2001-06-19 CN CNB011188332A patent/CN1181553C/zh not_active Expired - Fee Related
- 2001-06-19 TW TW090114863A patent/TW511275B/zh not_active IP Right Cessation
- 2001-06-19 EP EP01114688A patent/EP1168454B1/de not_active Expired - Lifetime
- 2001-06-19 DE DE60118061T patent/DE60118061T2/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CN1181553C (zh) | 2004-12-22 |
| KR100655028B1 (ko) | 2006-12-07 |
| CN1350333A (zh) | 2002-05-22 |
| EP1168454B1 (de) | 2006-03-22 |
| KR20010113555A (ko) | 2001-12-28 |
| JP2002009255A (ja) | 2002-01-11 |
| DE60118061T2 (de) | 2006-08-17 |
| EP1168454A2 (de) | 2002-01-02 |
| US20010052607A1 (en) | 2001-12-20 |
| EP1168454A3 (de) | 2004-03-03 |
| TW511275B (en) | 2002-11-21 |
| US6455883B2 (en) | 2002-09-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE60100716D1 (de) | Nichtflüchtige Halbleiterspeicher | |
| DE60121865D1 (de) | Nichtflüchtige Halbleiterspeicheranordnung | |
| DE60126383D1 (de) | Nichtflüchtige Halbleiterspeicheranordnung | |
| DE60122045D1 (de) | Nichtflüchtige Halbleiterspeicheranordnung | |
| DE69936028D1 (de) | Nichtflüchtiger Halbleiterspeicher | |
| DE60230345D1 (de) | Nichtflüchtige Halbleiterspeichervorrichtungen | |
| DE60314068D1 (de) | Nichtflüchtiger Halbleiterspeicher | |
| DE60144340D1 (de) | Nicht-flüchtiges SONOS-Halbleiterspeicherbauelement | |
| DE50111881D1 (de) | MRAM-Speicher | |
| DE602004007173D1 (de) | Nichtflüchtiger Halbleiterspeicher | |
| DE60332081D1 (de) | Nichtflüchtige Halbleiterspeicheranordnung | |
| DE60129073D1 (de) | Halbleiterspeicheranordnung | |
| DE60102257D1 (de) | Halbleiterspeicheranordnung | |
| DE60222947D1 (de) | Halbleiterspeicher | |
| DE60214496D1 (de) | Speicheranordnung | |
| DE60032644D1 (de) | Halbleiter-speicherbaustein | |
| DE60227330D1 (de) | Ferroelektrischer Halbleiterspeicher | |
| DE60043485D1 (de) | Nichtflüchtiger Halbleiterspeicher | |
| DE60315651D1 (de) | Halbleiterspeicher | |
| DE60336787D1 (de) | Halbleiterspeicher | |
| DE60212004D1 (de) | Speicheranordnung | |
| DE60016104D1 (de) | Nichtflüchtige Halbleiterspeicheranordnung | |
| DE60218009D1 (de) | Halbleiterspeichervorrichtung | |
| DE60107174D1 (de) | Halbleiterspeicheranordnung | |
| DE60233624D1 (de) | Speicheranordnung |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: PANASONIC CORP., KADOMA, OSAKA, JP |