IT1391864B1 - Cella di memoria resistiva e metodo per la fabbricazione di una cella di memoria resistiva - Google Patents

Cella di memoria resistiva e metodo per la fabbricazione di una cella di memoria resistiva

Info

Publication number
IT1391864B1
IT1391864B1 ITTO2008A000715A ITTO20080715A IT1391864B1 IT 1391864 B1 IT1391864 B1 IT 1391864B1 IT TO2008A000715 A ITTO2008A000715 A IT TO2008A000715A IT TO20080715 A ITTO20080715 A IT TO20080715A IT 1391864 B1 IT1391864 B1 IT 1391864B1
Authority
IT
Italy
Prior art keywords
memory cell
resistive memory
manufacture
resistive
cell
Prior art date
Application number
ITTO2008A000715A
Other languages
English (en)
Inventor
Fabio Pellizzer
Andrea Redaelli
Agostino Pirovano
Original Assignee
St Microelectronics Rousset
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Rousset filed Critical St Microelectronics Rousset
Priority to ITTO2008A000715A priority Critical patent/IT1391864B1/it
Priority to US12/570,256 priority patent/US20100078619A1/en
Publication of ITTO20080715A1 publication Critical patent/ITTO20080715A1/it
Application granted granted Critical
Publication of IT1391864B1 publication Critical patent/IT1391864B1/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
ITTO2008A000715A 2008-09-30 2008-09-30 Cella di memoria resistiva e metodo per la fabbricazione di una cella di memoria resistiva IT1391864B1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
ITTO2008A000715A IT1391864B1 (it) 2008-09-30 2008-09-30 Cella di memoria resistiva e metodo per la fabbricazione di una cella di memoria resistiva
US12/570,256 US20100078619A1 (en) 2008-09-30 2009-09-30 Resistive memory cell and method for manufacturing a resistive memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITTO2008A000715A IT1391864B1 (it) 2008-09-30 2008-09-30 Cella di memoria resistiva e metodo per la fabbricazione di una cella di memoria resistiva

Publications (2)

Publication Number Publication Date
ITTO20080715A1 ITTO20080715A1 (it) 2010-04-01
IT1391864B1 true IT1391864B1 (it) 2012-01-27

Family

ID=41061042

Family Applications (1)

Application Number Title Priority Date Filing Date
ITTO2008A000715A IT1391864B1 (it) 2008-09-30 2008-09-30 Cella di memoria resistiva e metodo per la fabbricazione di una cella di memoria resistiva

Country Status (2)

Country Link
US (1) US20100078619A1 (it)
IT (1) IT1391864B1 (it)

Families Citing this family (6)

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Publication number Priority date Publication date Assignee Title
US8932900B2 (en) * 2011-08-24 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Phase change memory and method of fabricating same
US8599599B2 (en) * 2011-09-01 2013-12-03 Micron Technology, Inc. Method, system, and device for phase change memory switch wall cell with approximately horizontal electrode contact
US8921960B2 (en) 2012-07-27 2014-12-30 Hewlett-Packard Development Company, L.P. Memristor cell structures for high density arrays
US20180006088A1 (en) * 2015-01-26 2018-01-04 Hewlett Packard Enterprise Development Lp RESISTIVE RANDOM ACCESS MEMORY (ReRAM) DEVICE
US9876054B1 (en) * 2016-07-27 2018-01-23 Western Digital Technologies, Inc. Thermal management of selector
WO2022115985A1 (en) * 2020-12-01 2022-06-09 Yangtze Advanced Memory Industrial Innovation Center Co., Ltd A novel liner confined cell structure and fabrication method with reduced programming current and thermal cross talk for 3d x-point memory

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US6420725B1 (en) * 1995-06-07 2002-07-16 Micron Technology, Inc. Method and apparatus for forming an integrated circuit electrode having a reduced contact area
US5825046A (en) * 1996-10-28 1998-10-20 Energy Conversion Devices, Inc. Composite memory material comprising a mixture of phase-change memory material and dielectric material
US6586761B2 (en) * 2001-09-07 2003-07-01 Intel Corporation Phase change material memory device
US6566700B2 (en) * 2001-10-11 2003-05-20 Ovonyx, Inc. Carbon-containing interfacial layer for phase-change memory
DE60137788D1 (de) * 2001-12-27 2009-04-09 St Microelectronics Srl Architektur einer nichtflüchtigen Phasenwechsel -Speichermatrix
DE10242877A1 (de) * 2002-09-16 2004-03-25 Infineon Technologies Ag Halbleitersubstrat sowie darin ausgebildete Halbleiterschaltung und zugehörige Herstellungsverfahren
EP1554763B1 (en) * 2002-10-11 2006-08-02 Koninklijke Philips Electronics N.V. Electric device comprising phase change material
US7012273B2 (en) * 2003-08-14 2006-03-14 Silicon Storage Technology, Inc. Phase change memory device employing thermal-electrical contacts with narrowing electrical current paths
JP4529493B2 (ja) * 2004-03-12 2010-08-25 株式会社日立製作所 半導体装置
KR100657956B1 (ko) * 2005-04-06 2006-12-14 삼성전자주식회사 다치 저항체 메모리 소자와 그 제조 및 동작 방법
US7397060B2 (en) * 2005-11-14 2008-07-08 Macronix International Co., Ltd. Pipe shaped phase change memory
DE602006016864D1 (de) * 2005-12-20 2010-10-21 Imec Vertikale phasenwechsel-speicherzelle und herstellungsverfahren dafür
US7741636B2 (en) * 2006-01-09 2010-06-22 Macronix International Co., Ltd. Programmable resistive RAM and manufacturing method
JP4989631B2 (ja) * 2006-03-30 2012-08-01 パナソニック株式会社 不揮発性記憶素子
US7359226B2 (en) * 2006-08-28 2008-04-15 Qimonda Ag Transistor, memory cell array and method for forming and operating a memory device
KR100881055B1 (ko) * 2007-06-20 2009-01-30 삼성전자주식회사 상변화 메모리 유닛, 이의 제조 방법, 이를 포함하는상변화 메모리 장치 및 그 제조 방법
US7679074B2 (en) * 2007-06-22 2010-03-16 Qimonda North America Corp. Integrated circuit having multilayer electrode
KR20090097362A (ko) * 2008-03-11 2009-09-16 삼성전자주식회사 저항 메모리 소자 및 그 형성 방법
US7791057B2 (en) * 2008-04-22 2010-09-07 Macronix International Co., Ltd. Memory cell having a buried phase change region and method for fabricating the same
TWI426604B (zh) * 2008-06-03 2014-02-11 Higgs Opl Capital Llc 相變化記憶裝置及其製造方法
US7795109B2 (en) * 2008-06-23 2010-09-14 Qimonda Ag Isolation trenches with conductive plates
US7932506B2 (en) * 2008-07-22 2011-04-26 Macronix International Co., Ltd. Fully self-aligned pore-type memory cell having diode access device
US7888665B2 (en) * 2008-08-21 2011-02-15 Qimonda Ag Integrated circuit including memory cell having cup-shaped electrode interface

Also Published As

Publication number Publication date
ITTO20080715A1 (it) 2010-04-01
US20100078619A1 (en) 2010-04-01

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