ATE410774T1 - Verfahren zum regeln des zuerst schmelzenden bereiches einer pcm-zelle und damit hergestellte vorrichtungen - Google Patents

Verfahren zum regeln des zuerst schmelzenden bereiches einer pcm-zelle und damit hergestellte vorrichtungen

Info

Publication number
ATE410774T1
ATE410774T1 AT06744975T AT06744975T ATE410774T1 AT E410774 T1 ATE410774 T1 AT E410774T1 AT 06744975 T AT06744975 T AT 06744975T AT 06744975 T AT06744975 T AT 06744975T AT E410774 T1 ATE410774 T1 AT E410774T1
Authority
AT
Austria
Prior art keywords
phase
area
controlling
produced therefrom
devices produced
Prior art date
Application number
AT06744975T
Other languages
English (en)
Inventor
Dirk Wouters
Ludovic Goux
Judith Lisoni
Thomas Gille
Original Assignee
Koninkl Philips Electronics Nv
Imec Inter Uni Micro Electr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv, Imec Inter Uni Micro Electr filed Critical Koninkl Philips Electronics Nv
Application granted granted Critical
Publication of ATE410774T1 publication Critical patent/ATE410774T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/041—Modification of switching materials after formation, e.g. doping
    • H10N70/043—Modification of switching materials after formation, e.g. doping by implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Control For Baths (AREA)
  • External Artificial Organs (AREA)
AT06744975T 2005-05-19 2006-05-18 Verfahren zum regeln des zuerst schmelzenden bereiches einer pcm-zelle und damit hergestellte vorrichtungen ATE410774T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US68303005P 2005-05-19 2005-05-19

Publications (1)

Publication Number Publication Date
ATE410774T1 true ATE410774T1 (de) 2008-10-15

Family

ID=36940206

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06744975T ATE410774T1 (de) 2005-05-19 2006-05-18 Verfahren zum regeln des zuerst schmelzenden bereiches einer pcm-zelle und damit hergestellte vorrichtungen

Country Status (7)

Country Link
US (1) US7897952B2 (de)
EP (1) EP1886318B1 (de)
JP (1) JP2008541475A (de)
CN (1) CN101228588B (de)
AT (1) ATE410774T1 (de)
DE (1) DE602006003098D1 (de)
WO (1) WO2006123306A1 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8008644B2 (en) * 2005-05-19 2011-08-30 Nxp B.V. Phase-change memory cell having two insulated regions
US7786460B2 (en) 2005-11-15 2010-08-31 Macronix International Co., Ltd. Phase change memory device and manufacturing method
CN101689603B (zh) * 2007-06-20 2015-08-12 台湾积体电路制造股份有限公司 电子元件及其制造方法
US8043888B2 (en) * 2008-01-18 2011-10-25 Freescale Semiconductor, Inc. Phase change memory cell with heater and method therefor
US8563355B2 (en) * 2008-01-18 2013-10-22 Freescale Semiconductor, Inc. Method of making a phase change memory cell having a silicide heater in conjunction with a FinFET
US8426838B2 (en) 2008-01-25 2013-04-23 Higgs Opl. Capital Llc Phase-change memory
US20110012082A1 (en) * 2008-03-21 2011-01-20 Nxp B.V. Electronic component comprising a convertible structure
CN101981721B (zh) * 2008-04-01 2013-12-25 Nxp股份有限公司 多位相变存储单元
US8604457B2 (en) 2008-11-12 2013-12-10 Higgs Opl. Capital Llc Phase-change memory element
US8486743B2 (en) 2011-03-23 2013-07-16 Micron Technology, Inc. Methods of forming memory cells
US8994489B2 (en) 2011-10-19 2015-03-31 Micron Technology, Inc. Fuses, and methods of forming and using fuses
US9252188B2 (en) 2011-11-17 2016-02-02 Micron Technology, Inc. Methods of forming memory cells
US8546231B2 (en) 2011-11-17 2013-10-01 Micron Technology, Inc. Memory arrays and methods of forming memory cells
US8723155B2 (en) 2011-11-17 2014-05-13 Micron Technology, Inc. Memory cells and integrated devices
US9136467B2 (en) 2012-04-30 2015-09-15 Micron Technology, Inc. Phase change memory cells and methods of forming phase change memory cells
US8765555B2 (en) 2012-04-30 2014-07-01 Micron Technology, Inc. Phase change memory cells and methods of forming phase change memory cells
US9553262B2 (en) 2013-02-07 2017-01-24 Micron Technology, Inc. Arrays of memory cells and methods of forming an array of memory cells
US9881971B2 (en) 2014-04-01 2018-01-30 Micron Technology, Inc. Memory arrays
US9362494B2 (en) 2014-06-02 2016-06-07 Micron Technology, Inc. Array of cross point memory cells and methods of forming an array of cross point memory cells
US9343506B2 (en) 2014-06-04 2016-05-17 Micron Technology, Inc. Memory arrays with polygonal memory cells having specific sidewall orientations
FR3038133B1 (fr) 2015-06-23 2017-08-25 St Microelectronics Crolles 2 Sas Cellule memoire a changement de phase ayant une structure compacte
FR3038132B1 (fr) * 2015-06-23 2017-08-11 St Microelectronics Crolles 2 Sas Cellule memoire resistive ayant une structure compacte
CN105088166B (zh) * 2015-08-24 2017-12-15 中国科学院上海微系统与信息技术研究所 一种相变型氧化钒材料及其制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1326254B1 (de) * 2001-12-27 2009-02-25 STMicroelectronics S.r.l. Architektur einer nichtflüchtigen Phasenwechsel -Speichermatrix
US6579760B1 (en) * 2002-03-28 2003-06-17 Macronix International Co., Ltd. Self-aligned, programmable phase change memory
KR100486306B1 (ko) * 2003-02-24 2005-04-29 삼성전자주식회사 셀프 히터 구조를 가지는 상변화 메모리 소자
KR100543445B1 (ko) 2003-03-04 2006-01-23 삼성전자주식회사 상변화 기억 소자 및 그 형성방법
KR100532462B1 (ko) * 2003-08-22 2005-12-01 삼성전자주식회사 상 변화 메모리 장치의 기입 전류 량을 제어하는프로그래밍 방법 및 프로그래밍 방법을 구현하는 기입드라이버 회로
JP2005093619A (ja) * 2003-09-16 2005-04-07 Sumio Hosaka 記録素子
DE20321085U1 (de) * 2003-10-23 2005-12-29 Commissariat à l'Energie Atomique Phasenwechselspeicher, Phasenwechselspeicheranordnung, Phasenwechselspeicherzelle, 2D-Phasenwechselspeicherzellen-Array, 3D-Phasenwechselspeicherzellen-Array und Elektronikbaustein
FR2861887B1 (fr) * 2003-11-04 2006-01-13 Commissariat Energie Atomique Element de memoire a changement de phase a cyclabilite amelioree
JP4792714B2 (ja) * 2003-11-28 2011-10-12 ソニー株式会社 記憶素子及び記憶装置
KR100564608B1 (ko) * 2004-01-29 2006-03-28 삼성전자주식회사 상변화 메모리 소자
US8115239B2 (en) * 2004-03-26 2012-02-14 Nxp B.V. Electric device comprising phase change material
US7402456B2 (en) * 2004-04-23 2008-07-22 Sharp Laboratories Of America, Inc. PCMO thin film with memory resistance properties

Also Published As

Publication number Publication date
EP1886318A1 (de) 2008-02-13
WO2006123306A1 (en) 2006-11-23
EP1886318B1 (de) 2008-10-08
JP2008541475A (ja) 2008-11-20
CN101228588B (zh) 2012-12-05
US7897952B2 (en) 2011-03-01
US20100001248A1 (en) 2010-01-07
DE602006003098D1 (de) 2008-11-20
CN101228588A (zh) 2008-07-23

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