DE602006003098D1 - Verfahren zum regeln des zuerst schmelzenden bereihtungen - Google Patents

Verfahren zum regeln des zuerst schmelzenden bereihtungen

Info

Publication number
DE602006003098D1
DE602006003098D1 DE602006003098T DE602006003098T DE602006003098D1 DE 602006003098 D1 DE602006003098 D1 DE 602006003098D1 DE 602006003098 T DE602006003098 T DE 602006003098T DE 602006003098 T DE602006003098 T DE 602006003098T DE 602006003098 D1 DE602006003098 D1 DE 602006003098D1
Authority
DE
Germany
Prior art keywords
phase
area
change material
services
regulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006003098T
Other languages
English (en)
Inventor
Dirk Wouters
Ludovic Goux
Judith Lisoni
Thomas Gille
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Interuniversitair Microelektronica Centrum vzw IMEC
Koninklijke Philips NV
Original Assignee
Interuniversitair Microelektronica Centrum vzw IMEC
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Interuniversitair Microelektronica Centrum vzw IMEC, Koninklijke Philips Electronics NV filed Critical Interuniversitair Microelektronica Centrum vzw IMEC
Publication of DE602006003098D1 publication Critical patent/DE602006003098D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/041—Modification of the switching material, e.g. post-treatment, doping
    • H10N70/043—Modification of the switching material, e.g. post-treatment, doping by implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Patterning of the switching material
    • H10N70/063—Patterning of the switching material by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
DE602006003098T 2005-05-19 2006-05-18 Verfahren zum regeln des zuerst schmelzenden bereihtungen Active DE602006003098D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US68303005P 2005-05-19 2005-05-19
PCT/IB2006/051576 WO2006123306A1 (en) 2005-05-19 2006-05-18 Method for controlling the 'first-to-melt' region in a pcm cell and devices obtained thereof

Publications (1)

Publication Number Publication Date
DE602006003098D1 true DE602006003098D1 (de) 2008-11-20

Family

ID=36940206

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006003098T Active DE602006003098D1 (de) 2005-05-19 2006-05-18 Verfahren zum regeln des zuerst schmelzenden bereihtungen

Country Status (7)

Country Link
US (1) US7897952B2 (de)
EP (1) EP1886318B1 (de)
JP (1) JP2008541475A (de)
CN (1) CN101228588B (de)
AT (1) ATE410774T1 (de)
DE (1) DE602006003098D1 (de)
WO (1) WO2006123306A1 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE420440T1 (de) * 2005-05-19 2009-01-15 Koninkl Philips Electronics Nv Verfahren zum regeln des zuerst schmelzenden bereiches einer pcm-zelle und damit hergestellte vorrichtungen
US7786460B2 (en) * 2005-11-15 2010-08-31 Macronix International Co., Ltd. Phase change memory device and manufacturing method
JP5127920B2 (ja) * 2007-06-20 2013-01-23 台湾積體電路製造股▲ふん▼有限公司 電子装置及び電子装置の製造方法
US8563355B2 (en) * 2008-01-18 2013-10-22 Freescale Semiconductor, Inc. Method of making a phase change memory cell having a silicide heater in conjunction with a FinFET
US8043888B2 (en) * 2008-01-18 2011-10-25 Freescale Semiconductor, Inc. Phase change memory cell with heater and method therefor
US8426838B2 (en) 2008-01-25 2013-04-23 Higgs Opl. Capital Llc Phase-change memory
WO2009115995A1 (en) * 2008-03-21 2009-09-24 Nxp B.V. An electronic component comprising a convertible structure
CN101981721B (zh) * 2008-04-01 2013-12-25 Nxp股份有限公司 多位相变存储单元
US8604457B2 (en) 2008-11-12 2013-12-10 Higgs Opl. Capital Llc Phase-change memory element
US8486743B2 (en) 2011-03-23 2013-07-16 Micron Technology, Inc. Methods of forming memory cells
US8994489B2 (en) 2011-10-19 2015-03-31 Micron Technology, Inc. Fuses, and methods of forming and using fuses
US8723155B2 (en) 2011-11-17 2014-05-13 Micron Technology, Inc. Memory cells and integrated devices
US9252188B2 (en) 2011-11-17 2016-02-02 Micron Technology, Inc. Methods of forming memory cells
US8546231B2 (en) 2011-11-17 2013-10-01 Micron Technology, Inc. Memory arrays and methods of forming memory cells
US9136467B2 (en) 2012-04-30 2015-09-15 Micron Technology, Inc. Phase change memory cells and methods of forming phase change memory cells
US8765555B2 (en) 2012-04-30 2014-07-01 Micron Technology, Inc. Phase change memory cells and methods of forming phase change memory cells
US9553262B2 (en) 2013-02-07 2017-01-24 Micron Technology, Inc. Arrays of memory cells and methods of forming an array of memory cells
US9881971B2 (en) 2014-04-01 2018-01-30 Micron Technology, Inc. Memory arrays
US9362494B2 (en) 2014-06-02 2016-06-07 Micron Technology, Inc. Array of cross point memory cells and methods of forming an array of cross point memory cells
US9343506B2 (en) 2014-06-04 2016-05-17 Micron Technology, Inc. Memory arrays with polygonal memory cells having specific sidewall orientations
FR3038133B1 (fr) 2015-06-23 2017-08-25 St Microelectronics Crolles 2 Sas Cellule memoire a changement de phase ayant une structure compacte
FR3038132B1 (fr) * 2015-06-23 2017-08-11 St Microelectronics Crolles 2 Sas Cellule memoire resistive ayant une structure compacte
CN105088166B (zh) * 2015-08-24 2017-12-15 中国科学院上海微系统与信息技术研究所 一种相变型氧化钒材料及其制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60137788D1 (de) * 2001-12-27 2009-04-09 St Microelectronics Srl Architektur einer nichtflüchtigen Phasenwechsel -Speichermatrix
US6579760B1 (en) * 2002-03-28 2003-06-17 Macronix International Co., Ltd. Self-aligned, programmable phase change memory
KR100486306B1 (ko) * 2003-02-24 2005-04-29 삼성전자주식회사 셀프 히터 구조를 가지는 상변화 메모리 소자
KR100543445B1 (ko) 2003-03-04 2006-01-23 삼성전자주식회사 상변화 기억 소자 및 그 형성방법
KR100532462B1 (ko) * 2003-08-22 2005-12-01 삼성전자주식회사 상 변화 메모리 장치의 기입 전류 량을 제어하는프로그래밍 방법 및 프로그래밍 방법을 구현하는 기입드라이버 회로
JP2005093619A (ja) * 2003-09-16 2005-04-07 Sumio Hosaka 記録素子
DE10349750A1 (de) * 2003-10-23 2005-05-25 Commissariat à l'Energie Atomique Phasenwechselspeicher, Phasenwechselspeicheranordnung, Phasenwechselspeicherzelle, 2D-Phasenwechselspeicherzellen-Array, 3D-Phasenwechselspeicherzellen-Array und Elektronikbaustein
FR2861887B1 (fr) * 2003-11-04 2006-01-13 Commissariat Energie Atomique Element de memoire a changement de phase a cyclabilite amelioree
JP4792714B2 (ja) * 2003-11-28 2011-10-12 ソニー株式会社 記憶素子及び記憶装置
KR100564608B1 (ko) * 2004-01-29 2006-03-28 삼성전자주식회사 상변화 메모리 소자
EP1787329B1 (de) * 2004-03-26 2010-10-27 Nxp B.V. Elektrische einrichtung mit einem phasenänderungsmaterial
US7402456B2 (en) * 2004-04-23 2008-07-22 Sharp Laboratories Of America, Inc. PCMO thin film with memory resistance properties

Also Published As

Publication number Publication date
ATE410774T1 (de) 2008-10-15
EP1886318B1 (de) 2008-10-08
JP2008541475A (ja) 2008-11-20
CN101228588A (zh) 2008-07-23
CN101228588B (zh) 2012-12-05
WO2006123306A1 (en) 2006-11-23
EP1886318A1 (de) 2008-02-13
US7897952B2 (en) 2011-03-01
US20100001248A1 (en) 2010-01-07

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