JP3889023B2 - 可変抵抗素子とその製造方法並びにそれを備えた記憶装置 - Google Patents
可変抵抗素子とその製造方法並びにそれを備えた記憶装置 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 36
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 229910052723 transition metal Inorganic materials 0.000 claims description 24
- 239000010936 titanium Substances 0.000 claims description 20
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 19
- 229910052719 titanium Inorganic materials 0.000 claims description 15
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 13
- 150000004767 nitrides Chemical class 0.000 claims description 12
- 229910052759 nickel Inorganic materials 0.000 claims description 11
- 229910017052 cobalt Inorganic materials 0.000 claims description 8
- 239000010941 cobalt Substances 0.000 claims description 8
- 238000003860 storage Methods 0.000 claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 239000010937 tungsten Substances 0.000 claims description 8
- 229910052720 vanadium Inorganic materials 0.000 claims description 8
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 8
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 7
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 7
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052725 zinc Inorganic materials 0.000 claims description 7
- 239000011701 zinc Substances 0.000 claims description 7
- 229910052726 zirconium Inorganic materials 0.000 claims description 7
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 150000003624 transition metals Chemical class 0.000 claims description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 30
- 239000000463 material Substances 0.000 description 28
- 239000010410 layer Substances 0.000 description 11
- 239000011229 interlayer Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 230000008859 change Effects 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 238000005259 measurement Methods 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 230000014759 maintenance of location Effects 0.000 description 5
- 229910000510 noble metal Inorganic materials 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 229910000480 nickel oxide Inorganic materials 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- -1 nickel nitride Chemical class 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 229910018125 Al-Si Inorganic materials 0.000 description 2
- 229910018520 Al—Si Inorganic materials 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- 229910018594 Si-Cu Inorganic materials 0.000 description 2
- 229910008465 Si—Cu Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- SKKMWRVAJNPLFY-UHFFFAOYSA-N azanylidynevanadium Chemical compound [V]#N SKKMWRVAJNPLFY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- AKJVMGQSGCSQBU-UHFFFAOYSA-N zinc azanidylidenezinc Chemical compound [Zn++].[N-]=[Zn].[N-]=[Zn] AKJVMGQSGCSQBU-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0023—Address circuits or decoders
- G11C13/0026—Bit-line or column circuits
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/028—Formation of switching materials, e.g. deposition of layers by conversion of electrode material, e.g. oxidation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N99/00—Subject matter not provided for in other groups of this subclass
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/50—Resistive cell structure aspects
- G11C2213/52—Structure characterized by the electrode material, shape, etc.
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/79—Array wherein the access device being a transistor
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49082—Resistor making
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- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
2,12 可変抵抗体
3,13 第1電極
14 層間絶縁膜
15 コンタクトホール
16 メタル配線
21 可変抵抗素子
22 パルスジェネレータ
23 デジタルオシロスコープ
24 パラメータアナライザ
25 切替スイッチ
30 本発明に係る記憶装置
31 メモリセルアレイ
32 制御回路
33 読み出し回路
34 ビット線デコーダ
35 ワード線デコーダ
36 電圧パルス発生回路
W1,W2,・・・,Wn,Wx,Wy ワード線
B1,B2,・・・,Bm,Bx,By ビット線
S ソース線
R 可変抵抗素子
T 選択トランジスタ
101 半導体基板
102 素子分離領域
103 ゲート絶縁膜
104 ゲート電極
105 ドレイン拡散層領域
106 ソース拡散層領域
107 第1層間絶縁膜
108,114,115 コンタクトホール
109 バリア層
110 下部電極
111 可変抵抗体
112 上部電極
113 第2層間絶縁膜
116,117 第1配線
118 第3層間絶縁膜
119 第2配線
120 表面保護膜
Claims (7)
- 第1電極と第2電極と可変抵抗体とを備え、前記可変抵抗体が前記第1電極と前記第2電極とに挟持された領域に存し、前記第1の電極と前記第2の電極間に電圧パルスを印加することにより、前記第1電極と前記第2電極間の電気抵抗が変化する可変抵抗素子において、
前記可変抵抗体が遷移金属元素の酸窒化物であり、前記第1電極と前記可変抵抗体とが接触或いは対向する領域の面積、若しくは前記第2電極と前記可変抵抗体とが接触或いは対向する領域の面積のうち小さい方の面積が、0.06μm 2 以下であることを特徴とする可変抵抗素子。 - 前記可変抵抗体が、チタン、ニッケル、バナジウム、ジルコニウム、タングステン、コバルト、亜鉛の中から選択される元素の酸窒化物であることを特徴とする請求項1に記載の可変抵抗素子。
- 前記第2電極が、酸窒化物である前記可変抵抗体を構成する遷移金属と同元素を含んで成る導電性窒化物であることを特徴とする請求項1から請求項2の何れか1項に記載の可変抵抗素子。
- 前記第2電極が、チタン、ニッケル、バナジウム、ジルコニウム、タングステン、コバルト、亜鉛の中から選択される元素の導電性窒化物であることを特徴とする請求項3に記載の可変抵抗素子。
- 請求項1から請求項4の何れか1項に記載の可変抵抗素子の製造方法であって、
遷移金属の導電性窒化物からなる前記第2電極を形成する工程と、
前記第2電極の表面を酸化することにより遷移金属元素の酸窒化物からなる前記可変抵抗体を形成する工程と、
前記第1電極を形成する工程と、を有し、
前記第1電極と前記可変抵抗体とが接触或いは対向する領域の面積、若しくは前記第2電極と前記可変抵抗体とが接触或いは対向する領域の面積のうち小さい方の面積を、0.06μm 2 以下とすることを特徴とする可変抵抗素子の製造方法。 - 前記第2電極が、チタン、ニッケル、バナジウム、ジルコニウム、タングステン、コバルト、亜鉛の中から選択される元素の導電性窒化物であることを特徴とする請求項5に記載の可変抵抗素子の製造方法。
- 第1電極と第2電極と可変抵抗体とを有し、前記可変抵抗体が前記第1電極と前記第2電極とに挟持された領域に存し、前記第1の電極と前記第2の電極間に電圧パルスを印加することにより、前記第1電極と前記第2電極間の電気抵抗が変化する可変抵抗素子を備えた記憶装置であって、
前記可変抵抗体が遷移金属元素の酸窒化物であり、前記第1電極と前記可変抵抗体とが接触或いは対向する領域の面積、若しくは前記第2電極と前記可変抵抗体とが接触或いは対向する領域の面積のうち小さい方の面積が、0.06μm 2 以下であることを特徴とする可変抵抗素子を備えた記憶装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005228600A JP3889023B2 (ja) | 2005-08-05 | 2005-08-05 | 可変抵抗素子とその製造方法並びにそれを備えた記憶装置 |
TW095126239A TW200710845A (en) | 2005-08-05 | 2006-07-18 | Variable resistor element and production method therefor and storage device provided with it |
CN200680029245A CN100580930C (zh) | 2005-08-05 | 2006-07-21 | 可变电阻元件和其制造方法以及具备其的存储装置 |
US11/997,184 US7884699B2 (en) | 2005-08-05 | 2006-07-21 | Variable resistor element, manufacturing method thereof, and memory device provided with it |
PCT/JP2006/314487 WO2007018026A1 (ja) | 2005-08-05 | 2006-07-21 | 可変抵抗素子とその製造方法並びにそれを備えた記憶装置 |
EP06781409.5A EP1914806B1 (en) | 2005-08-05 | 2006-07-21 | Variable resistor element and production method therefor and storage device provided with it |
KR1020087004154A KR100966063B1 (ko) | 2005-08-05 | 2006-07-21 | 가변 저항 소자와 그 제조 방법, 그리고 가변 저항 소자를구비한 기억 장치 |
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JP2005228600A JP3889023B2 (ja) | 2005-08-05 | 2005-08-05 | 可変抵抗素子とその製造方法並びにそれを備えた記憶装置 |
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JP2007048779A JP2007048779A (ja) | 2007-02-22 |
JP3889023B2 true JP3889023B2 (ja) | 2007-03-07 |
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EP (1) | EP1914806B1 (ja) |
JP (1) | JP3889023B2 (ja) |
KR (1) | KR100966063B1 (ja) |
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Cited By (1)
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JP2018511935A (ja) * | 2015-02-25 | 2018-04-26 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 金属窒化物を選択的に除去するためにアルキルアミンを使用する方法及び装置 |
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US20190273205A1 (en) * | 2018-03-05 | 2019-09-05 | International Business Machines Corporation | ReRAM DEVICE RESISTIVITY CONTROL BY OXIDIZED ELECTRODE |
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Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6204139B1 (en) * | 1998-08-25 | 2001-03-20 | University Of Houston | Method for switching the properties of perovskite materials used in thin film resistors |
US6815744B1 (en) | 1999-02-17 | 2004-11-09 | International Business Machines Corporation | Microelectronic device for storing information with switchable ohmic resistance |
US7402851B2 (en) * | 2003-02-24 | 2008-07-22 | Samsung Electronics Co., Ltd. | Phase changeable memory devices including nitrogen and/or silicon and methods for fabricating the same |
KR100773537B1 (ko) * | 2003-06-03 | 2007-11-07 | 삼성전자주식회사 | 한 개의 스위칭 소자와 한 개의 저항체를 포함하는비휘발성 메모리 장치 및 그 제조 방법 |
CN1717748A (zh) * | 2003-06-25 | 2006-01-04 | 松下电器产业株式会社 | 驱动非易失性存储器的方法 |
KR100827653B1 (ko) * | 2004-12-06 | 2008-05-07 | 삼성전자주식회사 | 상변화 기억 셀들 및 그 제조방법들 |
FR2879013A1 (fr) * | 2005-12-06 | 2006-06-09 | Samsung Electronics Co Ltd | Cellule de memoire a changement de phase et procede de fabrication |
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2005
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- 2006-07-18 TW TW095126239A patent/TW200710845A/zh not_active IP Right Cessation
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- 2006-07-21 CN CN200680029245A patent/CN100580930C/zh not_active Expired - Fee Related
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9373664B2 (en) | 2014-07-28 | 2016-06-21 | Samsung Electronics Co., Ltd. | Variable resistance memory devices and methods of manufacturing the same |
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US7884699B2 (en) | 2011-02-08 |
TWI299865B (ja) | 2008-08-11 |
US20100085142A1 (en) | 2010-04-08 |
WO2007018026A1 (ja) | 2007-02-15 |
CN101238582A (zh) | 2008-08-06 |
KR20080028501A (ko) | 2008-03-31 |
KR100966063B1 (ko) | 2010-06-28 |
JP2007048779A (ja) | 2007-02-22 |
EP1914806A1 (en) | 2008-04-23 |
EP1914806A4 (en) | 2012-06-20 |
CN100580930C (zh) | 2010-01-13 |
EP1914806B1 (en) | 2013-09-25 |
TW200710845A (en) | 2007-03-16 |
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