CN101728364B - 芯片封装体及制作方法 - Google Patents

芯片封装体及制作方法 Download PDF

Info

Publication number
CN101728364B
CN101728364B CN2009101713433A CN200910171343A CN101728364B CN 101728364 B CN101728364 B CN 101728364B CN 2009101713433 A CN2009101713433 A CN 2009101713433A CN 200910171343 A CN200910171343 A CN 200910171343A CN 101728364 B CN101728364 B CN 101728364B
Authority
CN
China
Prior art keywords
chip
electric conductor
packing
base board
board unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2009101713433A
Other languages
English (en)
Other versions
CN101728364A (zh
Inventor
高东均
李正
安载善
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Semiconductor Engineering Inc
Original Assignee
Advanced Semiconductor Engineering Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Semiconductor Engineering Inc filed Critical Advanced Semiconductor Engineering Inc
Publication of CN101728364A publication Critical patent/CN101728364A/zh
Application granted granted Critical
Publication of CN101728364B publication Critical patent/CN101728364B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
    • H05K1/0218—Reduction of cross-talk, noise or electromagnetic interference by printed shielding conductors, ground planes or power plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15313—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a land array, e.g. LGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/04—Soldering or other types of metallurgic bonding
    • H05K2203/0415—Small preforms other than balls, e.g. discs, cylinders or pillars
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
    • H05K3/0032—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0044—Mechanical working of the substrate, e.g. drilling or punching
    • H05K3/0052—Depaneling, i.e. dividing a panel into circuit boards; Working of the edges of circuit boards
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H05K3/284—Applying non-metallic protective coatings for encapsulating mounted components

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
  • Dicing (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

本发明公开了一种芯片封装体及制作方法。该芯片封装体，包括一积层基板、至少一芯片、多个导电体、一封装胶体以及一遮蔽层。芯片配置于积层基板上。导电体配置于积层基板上且环绕芯片。封装胶体至少包覆芯片、部分积层基板与导电体。遮蔽层配置于封装胶体上，且覆盖封装胶体与部分地覆盖至少每一导电体暴露于封装胶体的一上表面。

Description

芯片封装体及制作方法
技术领域
本发明是有关于一种半导体装置，且特别是有关于一种芯片封装体及制作方法。
背景技术
电磁干扰(electro-magnetic interference)对于大多数的电子产品或系统而言是一严肃且富有挑战性的问题。由于电磁干扰常中断、阻碍、降低或限制电子装置或整体电路系统的效能表现，因此需要有效的电磁干扰屏蔽，以确保电子装置或系统的效率与安全操作。
电磁干扰屏蔽的效能对于小尺寸、高密度的封装体或应用于高频率的敏感电子仪器非常重要。一般而言，大都是通过增加金属板和/或导电性的垫圈来提升电磁干扰屏蔽的效能，但此方式会提高制造成本。
发明内容
本发明提供一种芯片封装体的制作方法，可提供较佳的设计灵活性。
本发明提供一种具有提升电磁干扰屏蔽效能的芯片封装体。
本发明提出一种芯片封装体，其包括一积层基板、至少一配置于积层基板上的芯片、多个导电体、一封装胶体以及一遮蔽层。导电体配置于积层基板上且环绕芯片。封装胶体至少包覆芯片、部分积层基板与导电体，但部分地暴露出这些导电体的多个上表面。遮蔽层配置于封装胶体上，且覆盖封装胶体与部分地覆盖每一导电体暴露于封装胶体的上表面。
在本发明一实施例中，上述这些导电体可由焊料或部分的导线架或部分的印刷电路板所组成。
在本发明一实施例中，上述这些导电体可排列于积层基板的边界线，且暴露出每一导电体的至少一侧壁。
在本发明一实施例中，上述这些导电体可沿着积层基板的边界线排列，且未暴露出每一导电体的多个侧壁。
在本发明一实施例中，上述芯片通过多个凸块电性连接至芯片封装体的积层基板。
本发明提供一种芯片封装体的制作方法。首先，提供一阵列基板。阵列基板具有多个基板单元，其中每一基板单元是由多条切割线所定义，且每一基板单元上具有一芯片贴附区域。接着，形成多个导电体于每一基板单元上，且这些导电体环绕芯片贴附区域配置。配置至少一芯片于每一基板单元的芯片贴附区域上，其中芯片电性连接至基板单元，且芯片与这些导电体相互分离。形成一封装胶体于阵列基板上，以包覆芯片、部分这些基板单元与这些导电体。进行一标记制程以移除部分封装胶体至暴露出每一导电体的一上表面。然后，形成一遮蔽层于封装胶体上，以覆盖封装胶体与每一导电体被暴露出的上表面。最后，进行一单体化制程，以形成多个芯片封装体。
在本发明一实施例中，上述这些导电体排列于阵列基板的这些切割线与每一基板单元的多条边界线，或相距一间隔距离而环绕每一基板单元的这些边界线配置。
在本发明一实施例中，上述这些导电体是由一金属材料所形成，且这些导电体形成方式包括喷涂法(spraying process)、溅镀法(sputtering process)或电镀法(plating process)，或者，这些导电体是由一焊料所形成，且这些导电体形成方式包括喷涂法或印刷法。
在本发明一实施例中，上述标记制程包括一雷射挖空制程(laserdigging process)或一雷射钻孔制程(laser drilling process)。
基于上述，遮蔽层与其所连接的导电体配置于基板上的作用可视为芯片封装体周围防电磁干扰辐射的电磁干扰屏蔽。在本发明中，通过遮蔽层与具有弹性且多种设计型态的导电体，即可达成一完整的电磁干扰屏蔽的效果。因此，遮蔽层与导电体可提高芯片封装体的电磁干扰屏蔽效果，使芯片封装体具有较佳的电磁干扰屏蔽效能。
为让本发明的上述特征和优点能更明显易懂，下文特举实施例，并配合附图作详细说明如下。
附图说明
图1A至图1G为本发明一实施例一种芯片封装体的制作方法；
图2为本发明一实施例一种芯片封装体的剖面示意图；
图3为本发明另一实施例一种芯片封装体的剖面示意图。
主要元件符号说明：
10、20-芯片封装体；   30-封装结构；     100-阵列基板；
102-基板单元；        102a-上表面；     103-芯片贴附区域；
104-接点；            106-凸块；        108-接地孔；
110-导电体；          110a-上表面；     110b-侧壁；
120-芯片；            130-封装胶体；    130b-侧壁；
140-遮蔽层；          d-间隔距离。
具体实施方式
本发明所述的芯片封装体的制作方法可用来制作多种封装结构，其中以制作堆栈式封装体、多层封装体或具有高频率装置的封装体(包括具有射频装置的封装体)最为适合。此外，本发明的芯片封装体的制作方法与利用积层基板的制造方法或阵列基板的制作方法的封装制程相互符合。
图1A至图1G为本发明一实施例一种芯片封装体的制作方法。在此必须说明的是，为了方便说明起见，图1A、图1B、图1B’与图1C为立体示意图，而1D至图1G为剖面示意图。
请先参考图1A，提供一阵列基板100。阵列基板100具有多个基板单元102(是由后续图示为虚线的切割线所定义)，其中每一基板单元102上包括多个接点104。这些接点104排列于每一基板单元102的芯片贴附区域103内。这些接点104的作用如同覆晶接合技术中的凸块焊垫。阵列基板100可为一积层基板，其例如是一印刷电路板(PrintedCircuit Board，PCB)。
接着，请参考图1B，多个导电体110形成于每一基板单元102的上表面102a上，且位于芯片贴附区域103外。较佳地，导电体110环绕每一基板单元102的边界或周长配置。请参考图1B，这些个别独立的导电体110排列于基板单元102的边界线(虚线)上。在本实施例中，后续的切割制程会沿着这些切割线而切穿这些导电体110。
此外，请参考图1B′，这些个别独立的导电体110也可沿着基板单元102的边界线排列，但不位于基板单元102的边界线(虚线)上。这些导电体110可排列接近于基板单元102的边界线，且这些导电体110与基板单元102的边界线相距一小间隔距离d，而间隔距离d可依据产品的需求而自由调整。因此，后续的切割制程虽然会沿着这些切割线但不会切穿这些导电体110。
导电体110例如是由一焊料所制成。当然，在其他实施例中，导电体110亦可以是一导电承载器的一部分，其中导电承载器例如是一导线架或一积层印刷电路板。导电体110的形状可为多边形的块状体(请参考图1B或图1B’的矩形块状体)。当然，导电体110的形状亦可以是块状、条状或甚至是一彼此相互连接的环状结构。一般来说，导电体110的形状或尺寸可依照屏蔽的需要、封装体电性的特性，或甚至是依据制程的参数而自由调整。
如果是利用一多层基板，例如是一多层印刷电路板，则可通过积层基板的制作过程中来形成所需的导电体110。也就是说，在形成基板上走线(trace)的过程中，亦同时形成导电体110，其中导电体110是除了走线之外的图案化金属块。
接着，请参考图1C，至少一芯片120配置于每一基板单元102的芯片贴附区域103内。虽然在此是提供芯片120配置于芯片贴附区域103内，但其他实施例中，亦可以是提供多个表面黏着型组件贴附于芯片贴附区域103内，此仍属于本发明可采用的技术方案，不脱离本发明所欲保护的范围。芯片120通过多个凸块106(请参考图1D)电性连接至基板单元102的这些接点104，其中这些凸块106介于芯片120与这些接点104之间。虽然在此是以覆晶接合技术作为说明，但于其他实施例中，亦包括利用打线接合技术来电性连接芯片120与这些接点104，仍属于本发明可采用的技术方案，不脱离本发明所欲保护的范围。芯片120与这些导电体110彼此完全分离。
接着，请参考图1D，通过一封胶制程而形成一封装胶体130于阵列基板100上，以包覆这些导电体110、芯片120、这些凸块106与至少一部分的基板单元102。封胶制程例如为一数组封胶制程(over-moldingprocess)。虽然在此所描述导电体110的高度高于芯片120加凸块106的整体高度，但在其他实施例中，亦可自由选择导电体110的高度小于或大于芯片120加凸块106的整体高度。
接着，请参考图1E，进行一标记制程以移除部分位于这些导电体110上的封装胶体130，以至少部分地暴露每一导电体110的上表面110a。这些导电体110的上表面110a可以是部分地或完全地被暴露。标记制程例如是一雷射挖空制程或一雷射钻孔制程。以导电体110环绕每一基板单元102的边界配置为例，标记制程可移除部分封装胶体130，据此形成一环状沟渠(ring-like trench)于封装胶体130内且于导电体110上，并环绕每一基板单元102的边界。
接着，请参考图1F，形成一遮蔽层140于封装胶体130上，以覆盖封装胶体130与导电体110被暴露出的上表面110a。遮蔽层140的形成方式包括喷涂法、电镀法或溅镀法。
最后，请参考图1G，进行一单体化制程，以形成多个独立的芯片封装体10。单体化制程例如是一刀片切割制程。
图2为本发明一实施例一种芯片封装体的剖面示意图。请参考图2，在本实施例中，芯片封装体20包括一基板单元102、多个凸块106、多个导电体110、至少一芯片120、一封装胶体130与一遮蔽层140。基板单元102可为一积层基板，其例如是一两层或一四层积层的印刷电路板基板。芯片120可为一半导体芯片，其例如是一射频(RF)芯片。遮蔽层140的材质可为铜、铝、铜铝合金或是一焊料。芯片120透过凸块106电性连接至基板单元102。封装胶体130包覆部分基板单元102、导电体110与芯片120。此外，遮蔽层140配置于封装胶体130上，且覆盖封装胶体130的上表面与这些导电体110被暴露出的上表面110a。遮蔽层140通过这些导电体110电性连接至基板单元102。
举例来说，导电体110可由一积层印刷电路板或一导线架所组成(例如是一积层印刷电路板或一导线架的一大部分或一小部分)。如果导电体110为一积层印刷电路板的一小部分，遮蔽层140可透过贯穿孔(through vias)或导电体110的电镀贯穿孔(plated through-holes)而电性连接至基板单元102。如果导电体110为一导线架的一部分，遮蔽层140可通过导电体110而电性连接至基板单元102，且导电体110可通过导电黏着层固接于基板单元102上，其中导电黏着层例如是一异方性导电胶膜(Anisotropic Conductive Film，ACF)。当然，导电体110亦可由焊料所组成，其例如是焊料块、焊料条或焊料环状结构。
此外，导电体110连接至基板单元102的一接地孔108，且遮蔽层140通过导电体110与接地孔108而接地。因此，可利用基板表面的金属线路或走线作为一接地平面，使本实施例的遮蔽层140可通过基板的接地平面而接地于封装结构内。在此必须说明的是，每一导电体110的至少一侧壁110b与遮蔽层140的边缘对齐，而此边缘即为切割制程时切穿导电体110所排列的切割线。换言之，每一导电体110的侧壁110b暴露于外。
请参考图3，在其他实施例中，封装胶体130覆盖每一导电体110的这些侧壁110b，也即每一导电体110的侧壁110b未暴露于外。换言之，导电体110除了被暴露的上表面110a外，其余的部分完全包覆于封装胶体130内。封装胶体130的侧壁130b通过单体化制程的切割与遮蔽层140的边缘对齐。基本上，封装结构30是依据图1B’(而不是图1B)的制作方法所形成，且切割制程虽是沿着切割线的方向来进行，但并没有切穿封装体110。
在本实施例芯片封装体的结构中，遮蔽层与导电体配置于基板上的作用可视为一电磁干扰屏蔽，用以保护芯片封装体免于周围辐射源的电磁干扰辐射。
此外，当遮蔽层形成于整个阵列基板与封装胶体上且于单体化制程之前，不需要半切割制程，可增加制程裕度与可靠度。
综上所述，由于遮蔽层与导电体可有效地遮蔽外界电磁干扰辐射，因此可提高本发明芯片封装体的电磁干扰屏蔽的效能。本发明芯片封装体的制作方法，是于封装结构内设立一接地路径，而不是利用一额外的金属板来作为接地平面。因此，这样的设计适合具有高频装置的封装，特别是一射频装置。
最后应说明的是：以上实施例仅用以说明本发明的技术方案，而非对其限制；尽管参照前述实施例对本发明进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例技术方案的精神和范围。

Claims (13)

1.一种芯片封装体，包括：
一积层基板；
至少一芯片，配置于该积层基板上；
多个导电体，配置于该积层基板上且环绕该芯片；
一封装胶体，至少包覆该芯片、部分该积层基板与所述导电体；以及，
一遮蔽层，配置于该封装胶体上，且覆盖该封装胶体与部分地接触并覆盖至少每一该导电体暴露于该封装胶体的一上表面。
其中所述导电体环绕该芯片配置且呈环状排列，且该芯片与所述导电体相互分离。
2.根据权利要求1的芯片封装体，其中至少暴露每一该导电体的一侧壁，且该侧壁与该遮蔽层的边缘对齐。
3.根据权利要求1的芯片封装体，其中该封装胶体覆盖所述导电体的多个侧壁，且该封装胶体的边缘与该遮蔽层的边缘对齐。
4.根据权利要求1的芯片封装体，其中该遮蔽层通过该导电体与该积层基板的至少一接地孔而电性连接至该积层基板。
5.根据权利要求1的芯片封装体，其中该导电体是由一焊料所制成，且该导电体为一焊料块。
6.根据权利要求1的芯片封装体，其中该导电体为一印刷电路板的一部分。
7.根据权利要求1的芯片封装体，其中该导电体为一导线架的一部分。
8.一种芯片封装体的制作方法，包括：
提供一阵列基板，该阵列基板具有多个基板单元，其中每一该基板单元是由多条切割线所定义，且每一该基板单元上具有一芯片贴附区域；
形成多个导电体于每一该基板单元上，且所述导电体环绕该芯片贴附区域配置；
配置至少一芯片于每一该基板单元的该芯片贴附区域上，其中该芯片电性连接至该基板单元，且该芯片与所述导电体相互分离；
形成一封装胶体于该阵列基板上，以包覆该芯片、部分所述基板单元与所述导电体；
进行一标记制程以移除部分该封装胶体至暴露出每一该导电体的一上表面；
形成一遮蔽层于该封装胶体上，以接触并覆盖该封装胶体与每一该导电体被暴露出的该上表面；以及，
进行一单体化制程，以形成多个芯片封装体。
9.根据权利要求8的芯片封装体的制作方法，其中所述导电体排列于该阵列基板的所述切割线上与每一该基板单元的多条边界线上。
10.根据权利要求8的芯片封装体的制作方法，其中所述导电体排列环绕每一该基板单元的多条边界线，且所述导电体与所述边界线相距一间隔距离。
11.根据权利要求8的芯片封装体的制作方法，其中所述导电体的材料包括一金属材料，且所述导电体的形成方式包括喷涂法、溅镀法或电镀法。
12.根据权利要求8的芯片封装体的制作方法，其中所述导电体的材料包括一焊料，且所述导电体的形成方式包括喷涂法或印刷法。
13.根据权利要求8的芯片封装体的制作方法，其中该标记制程包括一雷射挖空制程或一雷射钻孔制程。
CN2009101713433A 2008-10-31 2009-08-27 芯片封装体及制作方法 Active CN101728364B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10993708P 2008-10-31 2008-10-31
US61/109,937 2008-10-31
US12/388,771 2009-02-19
US12/388,771 US20100110656A1 (en) 2008-10-31 2009-02-19 Chip package and manufacturing method thereof

Publications (2)

Publication Number Publication Date
CN101728364A CN101728364A (zh) 2010-06-09
CN101728364B true CN101728364B (zh) 2012-07-04

Family

ID=42130376

Family Applications (2)

Application Number Title Priority Date Filing Date
CN2009101713433A Active CN101728364B (zh) 2008-10-31 2009-08-27 芯片封装体及制作方法
CN2009101681574A Active CN101728363B (zh) 2008-10-31 2009-09-01 晶片封装结构及其制作方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN2009101681574A Active CN101728363B (zh) 2008-10-31 2009-09-01 晶片封装结构及其制作方法

Country Status (3)

Country Link
US (3) US20100110656A1 (zh)
CN (2) CN101728364B (zh)
TW (2) TWI387070B (zh)

Families Citing this family (139)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8186048B2 (en) 2007-06-27 2012-05-29 Rf Micro Devices, Inc. Conformal shielding process using process gases
US8959762B2 (en) 2005-08-08 2015-02-24 Rf Micro Devices, Inc. Method of manufacturing an electronic module
US8022511B2 (en) 2008-02-05 2011-09-20 Advanced Semiconductor Engineering, Inc. Semiconductor device packages with electromagnetic interference shielding
US8350367B2 (en) * 2008-02-05 2013-01-08 Advanced Semiconductor Engineering, Inc. Semiconductor device packages with electromagnetic interference shielding
US8212339B2 (en) * 2008-02-05 2012-07-03 Advanced Semiconductor Engineering, Inc. Semiconductor device packages with electromagnetic interference shielding
US7989928B2 (en) 2008-02-05 2011-08-02 Advanced Semiconductor Engineering Inc. Semiconductor device packages with electromagnetic interference shielding
WO2009144960A1 (ja) * 2008-05-30 2009-12-03 三洋電機株式会社 半導体モジュール、半導体モジュールの製造方法および携帯機器
US8410584B2 (en) * 2008-08-08 2013-04-02 Advanced Semiconductor Engineering, Inc. Semiconductor device packages with electromagnetic interference shielding
US20100110656A1 (en) * 2008-10-31 2010-05-06 Advanced Semiconductor Engineering, Inc. Chip package and manufacturing method thereof
US20100207257A1 (en) * 2009-02-17 2010-08-19 Advanced Semiconductor Engineering, Inc. Semiconductor package and manufacturing method thereof
US8110902B2 (en) 2009-02-19 2012-02-07 Advanced Semiconductor Engineering, Inc. Chip package and manufacturing method thereof
US8018034B2 (en) 2009-05-01 2011-09-13 Stats Chippac, Ltd. Semiconductor device and method of forming shielding layer after encapsulation and grounded through interconnect structure
US8212340B2 (en) 2009-07-13 2012-07-03 Advanced Semiconductor Engineering, Inc. Chip package and manufacturing method thereof
US20110014746A1 (en) * 2009-07-17 2011-01-20 Stats Chippac, Ltd. Semiconductor Device and Method of Forming Conductive TSV in Peripheral Region of Die Prior to Wafer Singulaton
US20110084372A1 (en) * 2009-10-14 2011-04-14 Advanced Semiconductor Engineering, Inc. Package carrier, semiconductor package, and process for fabricating same
US8008121B2 (en) * 2009-11-04 2011-08-30 Stats Chippac, Ltd. Semiconductor package and method of mounting semiconductor die to opposite sides of TSV substrate
US8368185B2 (en) * 2009-11-19 2013-02-05 Advanced Semiconductor Engineering, Inc. Semiconductor device packages with electromagnetic interference shielding
US8030750B2 (en) * 2009-11-19 2011-10-04 Advanced Semiconductor Engineering, Inc. Semiconductor device packages with electromagnetic interference shielding
US8378466B2 (en) 2009-11-19 2013-02-19 Advanced Semiconductor Engineering, Inc. Wafer-level semiconductor device packages with electromagnetic interference shielding
TWI497679B (zh) * 2009-11-27 2015-08-21 Advanced Semiconductor Eng 半導體封裝件及其製造方法
US8569894B2 (en) 2010-01-13 2013-10-29 Advanced Semiconductor Engineering, Inc. Semiconductor package with single sided substrate design and manufacturing methods thereof
TWI489610B (zh) * 2010-01-18 2015-06-21 矽品精密工業股份有限公司 具電磁遮蔽之封裝結構之製法
US8372689B2 (en) * 2010-01-21 2013-02-12 Advanced Semiconductor Engineering, Inc. Wafer-level semiconductor device packages with three-dimensional fan-out and manufacturing methods thereof
TWI411075B (zh) * 2010-03-22 2013-10-01 Advanced Semiconductor Eng 半導體封裝件及其製造方法
US8624374B2 (en) 2010-04-02 2014-01-07 Advanced Semiconductor Engineering, Inc. Semiconductor device packages with fan-out and with connecting elements for stacking and manufacturing methods thereof
JP5229276B2 (ja) * 2010-06-11 2013-07-03 株式会社村田製作所 回路モジュール
TWI540698B (zh) 2010-08-02 2016-07-01 日月光半導體製造股份有限公司 半導體封裝件與其製造方法
WO2012016898A2 (de) * 2010-08-05 2012-02-09 Epcos Ag Verfahren zur herstellung einer mehrzahl von elektronischen bauelementen mit elektromagnetischer schirmung und insbesondere mit wärmeabführung und elektronisches bauelement mit elektromagnetischer schirmung und insbesondere mit wärmeabführung
US8284561B2 (en) 2010-08-05 2012-10-09 Advanced Semiconductor Engineering, Inc. Embedded component package structure
CN101937855B (zh) * 2010-08-10 2012-09-26 日月光半导体制造股份有限公司 元件内埋式封装结构的制作方法及其封装结构
US9137934B2 (en) 2010-08-18 2015-09-15 Rf Micro Devices, Inc. Compartmentalized shielding of selected components
WO2012025888A2 (en) * 2010-08-24 2012-03-01 Colorchip (Israel) Ltd. Light source mount
CN104934188B (zh) * 2010-08-26 2018-04-10 乾坤科技股份有限公司 电子封装结构及其封装方法
TWM395907U (en) * 2010-08-27 2011-01-01 Acsip Technology Corp Structure for packaging electronic components
US9007273B2 (en) 2010-09-09 2015-04-14 Advances Semiconductor Engineering, Inc. Semiconductor package integrated with conformal shield and antenna
US8227903B2 (en) * 2010-09-15 2012-07-24 Stats Chippac Ltd Integrated circuit packaging system with encapsulant containment and method of manufacture thereof
CN102324416B (zh) * 2010-09-16 2015-07-22 日月光半导体制造股份有限公司 整合屏蔽膜及天线的半导体封装件
US8941222B2 (en) 2010-11-11 2015-01-27 Advanced Semiconductor Engineering Inc. Wafer level semiconductor package and manufacturing methods thereof
US8654537B2 (en) * 2010-12-01 2014-02-18 Apple Inc. Printed circuit board with integral radio-frequency shields
US8279625B2 (en) 2010-12-14 2012-10-02 Apple Inc. Printed circuit board radio-frequency shielding structures
US9406658B2 (en) 2010-12-17 2016-08-02 Advanced Semiconductor Engineering, Inc. Embedded component device and manufacturing methods thereof
TWI525782B (zh) * 2011-01-05 2016-03-11 矽品精密工業股份有限公司 半導體封裝件及其製法
US20120187545A1 (en) * 2011-01-24 2012-07-26 Broadcom Corporation Direct through via wafer level fanout package
TWM409527U (en) * 2011-02-23 2011-08-11 Azurewave Technologies Inc Forming integrated circuit module
US8835226B2 (en) 2011-02-25 2014-09-16 Rf Micro Devices, Inc. Connection using conductive vias
US9627230B2 (en) 2011-02-28 2017-04-18 Qorvo Us, Inc. Methods of forming a microshield on standard QFN package
CN102695407B (zh) * 2011-03-23 2015-05-27 环旭电子股份有限公司 微小化电磁干扰防护结构及其制作方法
TW201240058A (en) * 2011-03-28 2012-10-01 Universal Scient Ind Shanghai Electromagnetic interference shielding structure for integrated circuit substrate and method for fabricating the same
CN102709274B (zh) * 2011-03-28 2016-06-29 环旭电子股份有限公司 集成电路基板的电磁干扰屏蔽结构与其制造方法
KR101862370B1 (ko) * 2011-05-30 2018-05-29 삼성전자주식회사 반도체 소자, 반도체 패키지 및 전자 장치
US9179538B2 (en) 2011-06-09 2015-11-03 Apple Inc. Electromagnetic shielding structures for selectively shielding components on a substrate
TWI483374B (zh) * 2011-09-27 2015-05-01 Advanced Semiconductor Eng 具有電磁干擾屏蔽膜的半導體封裝件及其製造方法
CN102306645A (zh) * 2011-09-29 2012-01-04 日月光半导体制造股份有限公司 具有电磁干扰屏蔽膜的半导体封装件及其制造方法
KR20130035620A (ko) * 2011-09-30 2013-04-09 삼성전자주식회사 Ｅｍｉ 쉴드된 반도체 패키지 및 ｅｍｉ 쉴드된 기판 모듈
KR20130041645A (ko) * 2011-10-17 2013-04-25 삼성전기주식회사 인쇄회로기판
US8617927B1 (en) 2011-11-29 2013-12-31 Hrl Laboratories, Llc Method of mounting electronic chips
US8541883B2 (en) 2011-11-29 2013-09-24 Advanced Semiconductor Engineering, Inc. Semiconductor device having shielded conductive vias
CN103219295B (zh) * 2012-01-20 2015-12-16 环旭电子股份有限公司 适形掩模封装结构及检测方法
US9030841B2 (en) * 2012-02-23 2015-05-12 Apple Inc. Low profile, space efficient circuit shields
TWI459521B (zh) * 2012-03-08 2014-11-01 矽品精密工業股份有限公司 半導體封裝件及其製法
US8937376B2 (en) 2012-04-16 2015-01-20 Advanced Semiconductor Engineering, Inc. Semiconductor packages with heat dissipation structures and related methods
US8786060B2 (en) 2012-05-04 2014-07-22 Advanced Semiconductor Engineering, Inc. Semiconductor package integrated with conformal shield and antenna
US8704341B2 (en) 2012-05-15 2014-04-22 Advanced Semiconductor Engineering, Inc. Semiconductor packages with thermal dissipation structures and EMI shielding
US8653634B2 (en) 2012-06-11 2014-02-18 Advanced Semiconductor Engineering, Inc. EMI-shielded semiconductor devices and methods of making
US9348936B2 (en) 2012-07-25 2016-05-24 Oracle International Corporation Heuristic caching to personalize applications
US9153542B2 (en) 2012-08-01 2015-10-06 Advanced Semiconductor Engineering, Inc. Semiconductor package having an antenna and manufacturing method thereof
US8729679B1 (en) 2012-12-04 2014-05-20 Nxp, B.V. Shielding silicon from external RF interference
US9978688B2 (en) 2013-02-28 2018-05-22 Advanced Semiconductor Engineering, Inc. Semiconductor package having a waveguide antenna and manufacturing method thereof
US9837701B2 (en) 2013-03-04 2017-12-05 Advanced Semiconductor Engineering, Inc. Semiconductor package including antenna substrate and manufacturing method thereof
US9129954B2 (en) 2013-03-07 2015-09-08 Advanced Semiconductor Engineering, Inc. Semiconductor package including antenna layer and manufacturing method thereof
US9172131B2 (en) 2013-03-15 2015-10-27 Advanced Semiconductor Engineering, Inc. Semiconductor structure having aperture antenna
CN103151327B (zh) * 2013-03-29 2016-06-22 日月光半导体制造股份有限公司 半导体封装件及其制造方法
US9711462B2 (en) 2013-05-08 2017-07-18 Infineon Technologies Ag Package arrangement including external block comprising semiconductor material and electrically conductive plastic material
US9807890B2 (en) 2013-05-31 2017-10-31 Qorvo Us, Inc. Electronic modules having grounded electromagnetic shields
US10079160B1 (en) 2013-06-21 2018-09-18 Hrl Laboratories, Llc Surface mount package for semiconductor devices with embedded heat spreaders
CN103400825B (zh) 2013-07-31 2016-05-18 日月光半导体制造股份有限公司 半导体封装件及其制造方法
JP5756500B2 (ja) * 2013-08-07 2015-07-29 太陽誘電株式会社 回路モジュール
JP5517378B1 (ja) * 2013-08-13 2014-06-11 太陽誘電株式会社 回路モジュール
JP5517379B1 (ja) * 2013-08-19 2014-06-11 太陽誘電株式会社 回路モジュール
JP5576543B1 (ja) * 2013-09-12 2014-08-20 太陽誘電株式会社 回路モジュール
US9488779B2 (en) * 2013-11-11 2016-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method of forming laser chip package with waveguide for light coupling
US9524942B2 (en) 2013-12-18 2016-12-20 Taiwan Semiconductor Manufacturing Company, Ltd. Chip-on-substrate packaging on carrier
US9768038B2 (en) * 2013-12-23 2017-09-19 STATS ChipPAC, Pte. Ltd. Semiconductor device and method of making embedded wafer level chip scale packages
JP6262776B2 (ja) * 2014-02-04 2018-01-17 太陽誘電株式会社 回路モジュール
FR3018630A1 (fr) * 2014-03-11 2015-09-18 St Microelectronics Grenoble 2 Boitier electronique perfore et procede de fabrication
KR102245134B1 (ko) * 2014-04-18 2021-04-28 삼성전자 주식회사 반도체 칩을 구비하는 반도체 패키지
TWI594390B (zh) * 2014-05-16 2017-08-01 矽品精密工業股份有限公司 半導體封裝件及其製法
US9754897B2 (en) 2014-06-02 2017-09-05 STATS ChipPAC, Pte. Ltd. Semiconductor device and method of forming electromagnetic (EM) shielding for LC circuits
KR101616625B1 (ko) * 2014-07-30 2016-04-28 삼성전기주식회사 반도체 패키지 및 그 제조방법
KR101501735B1 (ko) * 2014-09-23 2015-03-12 제너셈(주) 반도체패키지의 ｅｍｉ 쉴드 처리공법
KR20160040927A (ko) 2014-10-06 2016-04-15 삼성전자주식회사 반도체 패키지 및 그 제조 방법
JP6443458B2 (ja) * 2015-01-30 2018-12-26 株式会社村田製作所 電子回路モジュール
US9437576B1 (en) 2015-03-23 2016-09-06 Advanced Semiconductor Engineering, Inc. Semiconductor device package and method of manufacturing the same
USD772181S1 (en) * 2015-04-02 2016-11-22 Genesis Photonics Inc. Light emitting diode package substrate
US9385083B1 (en) 2015-05-22 2016-07-05 Hrl Laboratories, Llc Wafer-level die to package and die to die interconnects suspended over integrated heat sinks
US9461001B1 (en) 2015-07-22 2016-10-04 Advanced Semiconductor Engineering, Inc. Semiconductor device package integrated with coil for wireless charging and electromagnetic interference shielding, and method of manufacturing the same
US9871016B2 (en) 2015-07-29 2018-01-16 Samsung Electronics Co., Ltd. Semiconductor package
TWI550814B (zh) 2015-07-31 2016-09-21 矽品精密工業股份有限公司 承載體、封裝基板、電子封裝件及其製法
KR20170019023A (ko) 2015-08-10 2017-02-21 에스케이하이닉스 주식회사 전자기 간섭 차폐부를 갖는 반도체 패키지 및 제조 방법
KR102437673B1 (ko) * 2015-09-09 2022-08-26 삼성전자주식회사 반도체 장치
US10026672B1 (en) 2015-10-21 2018-07-17 Hrl Laboratories, Llc Recursive metal embedded chip assembly
US9508652B1 (en) 2015-11-24 2016-11-29 Hrl Laboratories, Llc Direct IC-to-package wafer level packaging with integrated thermal heat spreaders
US10643953B2 (en) * 2015-11-30 2020-05-05 At&S Austria Technologie & Systemtechnik Aktiengesellschaft Electronic component packaged in component carrier serving as shielding cage
US9918414B2 (en) 2015-12-18 2018-03-13 Intel Corporation Electromagnetic interference shields for electronic packages and related methods
US20170287847A1 (en) * 2016-04-01 2017-10-05 Rajendra C. Dias Integrated circuit package having integrated emi shield
JP6728917B2 (ja) * 2016-04-12 2020-07-22 Tdk株式会社 電子回路モジュールの製造方法
US9793222B1 (en) 2016-04-21 2017-10-17 Apple Inc. Substrate designed to provide EMI shielding
CN105870106A (zh) * 2016-06-01 2016-08-17 爱普科斯科技（无锡）有限公司 一种射频滤波模块的封装结构及其封装工艺
JP6520845B2 (ja) * 2016-06-29 2019-05-29 株式会社村田製作所 電子部品装置、回路基板への電子部品装置の実装方法、および、回路基板への電子部品装置の実装構造
US20180076148A1 (en) * 2016-09-15 2018-03-15 Skyworks Solutions, Inc. Through-mold features for shielding applications
KR20180032985A (ko) 2016-09-23 2018-04-02 삼성전자주식회사 집적회로 패키지 및 그 제조 방법과 집적회로 패키지를 포함하는 웨어러블 디바이스
JP6832666B2 (ja) * 2016-09-30 2021-02-24 株式会社ディスコ 半導体パッケージの製造方法
CN106340506A (zh) * 2016-10-20 2017-01-18 江苏长电科技股份有限公司 一种半导体封装结构及其制作方法
CN106298743B (zh) * 2016-10-20 2018-11-09 江苏长电科技股份有限公司 具有屏蔽效果的封装结构及其制作方法
CN106449440B (zh) * 2016-10-20 2019-02-01 江苏长电科技股份有限公司 一种具有电磁屏蔽功能的封装结构的制造方法
CN106531645A (zh) * 2016-12-21 2017-03-22 江苏长电科技股份有限公司 先封后蚀贴装金属导通三维封装结构的工艺方法
CN106981430B (zh) * 2016-12-21 2019-01-29 江苏长电科技股份有限公司 一种贴装金属导通三维系统级线路板的工艺方法
CN106601636B (zh) * 2016-12-21 2018-11-09 江苏长电科技股份有限公司 一种贴装预包封金属导通三维封装结构的工艺方法
JP6800745B2 (ja) * 2016-12-28 2020-12-16 株式会社ディスコ 半導体パッケージの製造方法
CN108735715A (zh) * 2017-04-20 2018-11-02 吴明哲 选择性电磁遮蔽封装体结构及其制法
US10978406B2 (en) * 2017-07-13 2021-04-13 Mediatek Inc. Semiconductor package including EMI shielding structure and method for forming the same
KR20190014993A (ko) * 2017-08-04 2019-02-13 에스케이하이닉스 주식회사 지시 패턴을 포함하는 반도체 패키지
US10593630B2 (en) * 2018-05-11 2020-03-17 Advanced Semiconductor Engineering, Inc. Semiconductor package and method for manufacturing the same
US11127689B2 (en) 2018-06-01 2021-09-21 Qorvo Us, Inc. Segmented shielding using wirebonds
US11219144B2 (en) 2018-06-28 2022-01-04 Qorvo Us, Inc. Electromagnetic shields for sub-modules
KR102140554B1 (ko) * 2018-09-12 2020-08-03 삼성전자주식회사 반도체 패키지 및 패키지 실장 기판
ES2894505T3 (es) * 2018-10-17 2022-02-14 3M Innovative Properties Co Ensamblaje de placa de circuito impreso encapsulada para detectar el voltaje de un cable de alimentación en una red de distribución de energía
TWI744572B (zh) * 2018-11-28 2021-11-01 蔡憲聰 具有封裝內隔室屏蔽的半導體封裝及其製作方法
US11211340B2 (en) 2018-11-28 2021-12-28 Shiann-Tsong Tsai Semiconductor package with in-package compartmental shielding and active electro-magnetic compatibility shielding
US10896880B2 (en) 2018-11-28 2021-01-19 Shiann-Tsong Tsai Semiconductor package with in-package compartmental shielding and fabrication method thereof
US10923435B2 (en) 2018-11-28 2021-02-16 Shiann-Tsong Tsai Semiconductor package with in-package compartmental shielding and improved heat-dissipation performance
US10950562B1 (en) 2018-11-30 2021-03-16 Hrl Laboratories, Llc Impedance-matched through-wafer transition using integrated heat-spreader technology
US11114363B2 (en) 2018-12-20 2021-09-07 Qorvo Us, Inc. Electronic package arrangements and related methods
US11515282B2 (en) 2019-05-21 2022-11-29 Qorvo Us, Inc. Electromagnetic shields with bonding wires for sub-modules
TWI720839B (zh) * 2020-03-09 2021-03-01 南茂科技股份有限公司 晶片封裝結構及其製造方法
WO2021234969A1 (ja) * 2020-05-22 2021-11-25 三菱電機株式会社 半導体装置、半導体装置の製造方法
TWI772170B (zh) * 2021-09-06 2022-07-21 先豐通訊股份有限公司 具有內埋芯片的線路板及其製作方法
TWI820772B (zh) * 2022-06-29 2023-11-01 同欣電子工業股份有限公司 封裝基板及晶片組件的製造方法
CN117832199A (zh) * 2022-09-27 2024-04-05 Jcet星科金朋韩国有限公司 半导体器件及其制造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6566596B1 (en) * 1997-12-29 2003-05-20 Intel Corporation Magnetic and electric shielding of on-board devices
CN1856878A (zh) * 2003-09-25 2006-11-01 飞思卡尔半导体公司 形成半导体封装的方法及其结构

Family Cites Families (138)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1439460A1 (de) * 1964-10-19 1968-12-12 Siemens Ag Elektrisches Bauelement,insbesondere Halbleiterbauelement,mit einer aus isolierendemStoff bestehenden Huelle
US4049682A (en) * 1976-03-01 1977-09-20 International Flavors & Fragrances Inc. Processes for preparing enol esters
JPS59172253A (ja) * 1983-03-18 1984-09-28 Mitsubishi Electric Corp 半導体装置
JPS59189142A (ja) * 1983-04-12 1984-10-26 Ube Ind Ltd 導電性熱可塑性樹脂組成物
US4814205A (en) * 1983-12-02 1989-03-21 Omi International Corporation Process for rejuvenation electroless nickel solution
US4821007A (en) 1987-02-06 1989-04-11 Tektronix, Inc. Strip line circuit component and method of manufacture
FR2649530B1 (fr) * 1989-07-06 1994-04-29 Alsthom Gec Brin supraconducteur multifilamentaire
US5140745A (en) 1990-07-23 1992-08-25 Mckenzie Jr Joseph A Method for forming traces on side edges of printed circuit boards and devices formed thereby
US5557142A (en) * 1991-02-04 1996-09-17 Motorola, Inc. Shielded semiconductor device package
US5166772A (en) * 1991-02-22 1992-11-24 Motorola, Inc. Transfer molded semiconductor device package with integral shield
US5173764A (en) 1991-04-08 1992-12-22 Motorola, Inc. Semiconductor device having a particular lid means and encapsulant to reduce die stress
JP2616280B2 (ja) * 1991-04-27 1997-06-04 株式会社村田製作所 発振器及びその製造方法
DE4340594C2 (de) * 1992-12-01 1998-04-09 Murata Manufacturing Co Verfahren zur Herstellung und zum Einstellen der Charakteristik eines oberflächenmontierbaren chipförmigen LC-Filters
US5353498A (en) * 1993-02-08 1994-10-11 General Electric Company Method for fabricating an integrated circuit module
US5355016A (en) * 1993-05-03 1994-10-11 Motorola, Inc. Shielded EPROM package
FI117224B (fi) 1994-01-20 2006-07-31 Nec Tokin Corp Sähkömagneettinen häiriönpoistokappale, ja sitä soveltavat elektroninen laite ja hybridimikropiirielementti
US6455864B1 (en) * 1994-04-01 2002-09-24 Maxwell Electronic Components Group, Inc. Methods and compositions for ionizing radiation shielding
US5639989A (en) 1994-04-19 1997-06-17 Motorola Inc. Shielded electronic component assembly and method for making the same
JP3541491B2 (ja) 1994-06-22 2004-07-14 セイコーエプソン株式会社 電子部品
DE4443489C2 (de) 1994-12-07 1997-08-14 Happich Gmbh Gebr Verfahren zum Herstellen eines mit Dekormaterialzuschnitten umhüllten Sonnenblendenkörpers einer Fahrzeugsonnenblende
US5677511A (en) 1995-03-20 1997-10-14 National Semiconductor Corporation Overmolded PC board with ESD protection and EMI suppression
JPH08288686A (ja) 1995-04-20 1996-11-01 Nec Corp 半導体装置
US5600181A (en) * 1995-05-24 1997-02-04 Lockheed Martin Corporation Hermetically sealed high density multi-chip package
DE29514398U1 (de) 1995-09-07 1995-10-19 Siemens AG, 80333 München Abschirmung für Flachbaugruppen
US5847930A (en) * 1995-10-13 1998-12-08 Hei, Inc. Edge terminals for electronic circuit modules
JP3432982B2 (ja) 1995-12-13 2003-08-04 沖電気工業株式会社 表面実装型半導体装置の製造方法
US5998867A (en) 1996-02-23 1999-12-07 Honeywell Inc. Radiation enhanced chip encapsulant
JP2938820B2 (ja) * 1996-03-14 1999-08-25 ティーディーケイ株式会社 高周波モジュール
US5694300A (en) 1996-04-01 1997-12-02 Northrop Grumman Corporation Electromagnetically channelized microwave integrated circuit
JP2850860B2 (ja) * 1996-06-24 1999-01-27 住友金属工業株式会社 電子部品の製造方法
US5776798A (en) 1996-09-04 1998-07-07 Motorola, Inc. Semiconductor package and method thereof
US6150193A (en) * 1996-10-31 2000-11-21 Amkor Technology, Inc. RF shielded device
JPH10284935A (ja) 1997-04-09 1998-10-23 Murata Mfg Co Ltd 電圧制御発振器およびその製造方法
US5895229A (en) 1997-05-19 1999-04-20 Motorola, Inc. Microelectronic package including a polymer encapsulated die, and method for forming same
JP3834426B2 (ja) * 1997-09-02 2006-10-18 沖電気工業株式会社 半導体装置
US5977626A (en) * 1998-08-12 1999-11-02 Industrial Technology Research Institute Thermally and electrically enhanced PBGA package
US6092281A (en) * 1998-08-28 2000-07-25 Amkor Technology, Inc. Electromagnetic interference shield driver and method
US6194250B1 (en) 1998-09-14 2001-02-27 Motorola, Inc. Low-profile microelectronic package
JP3617368B2 (ja) 1999-04-02 2005-02-02 株式会社村田製作所 マザー基板および子基板ならびにその製造方法
US6376769B1 (en) * 1999-05-18 2002-04-23 Amerasia International Technology, Inc. High-density electronic package, and method for making same
US6255143B1 (en) 1999-08-04 2001-07-03 St. Assembly Test Services Pte Ltd. Flip chip thermally enhanced ball grid array
FR2799883B1 (fr) 1999-10-15 2003-05-30 Thomson Csf Procede d'encapsulation de composants electroniques
US6261680B1 (en) * 1999-12-07 2001-07-17 Hughes Electronics Corporation Electronic assembly with charge-dissipating transparent conformal coating
DE10002852A1 (de) 2000-01-24 2001-08-02 Infineon Technologies Ag Abschirmeinrichtung und elektrisches Bauteil mit einer Abschirmeinrichtung
US20010033478A1 (en) 2000-04-21 2001-10-25 Shielding For Electronics, Inc. EMI and RFI shielding for printed circuit boards
US6757181B1 (en) * 2000-08-22 2004-06-29 Skyworks Solutions, Inc. Molded shield structures and method for their fabrication
US6448632B1 (en) * 2000-08-28 2002-09-10 National Semiconductor Corporation Metal coated markings on integrated circuit devices
US6586822B1 (en) * 2000-09-08 2003-07-01 Intel Corporation Integrated core microelectronic package
TW454321B (en) * 2000-09-13 2001-09-11 Siliconware Precision Industries Co Ltd Semiconductor package with heat dissipation structure
EP1195194B1 (en) * 2000-10-09 2006-02-01 Urea Casale S.A. Improved apparatus for carbamate decomposition and ammonia and carbon dioxide stripping from urea solutions
CN2457740Y (zh) * 2001-01-09 2001-10-31 台湾沛晶股份有限公司 集成电路晶片的构装
US20020093108A1 (en) * 2001-01-15 2002-07-18 Grigorov Ilya L. Flip chip packaged semiconductor device having double stud bumps and method of forming same
US6472743B2 (en) * 2001-02-22 2002-10-29 Siliconware Precision Industries, Co., Ltd. Semiconductor package with heat dissipating structure
JP3718131B2 (ja) * 2001-03-16 2005-11-16 松下電器産業株式会社 高周波モジュールおよびその製造方法
US6900383B2 (en) * 2001-03-19 2005-05-31 Hewlett-Packard Development Company, L.P. Board-level EMI shield that adheres to and conforms with printed circuit board component and board surfaces
JP3878430B2 (ja) * 2001-04-06 2007-02-07 株式会社ルネサステクノロジ 半導体装置
TW495943B (en) 2001-04-18 2002-07-21 Siliconware Precision Industries Co Ltd Semiconductor package article with heat sink structure and its manufacture method
US6614102B1 (en) * 2001-05-04 2003-09-02 Amkor Technology, Inc. Shielded semiconductor leadframe package
US6686649B1 (en) 2001-05-14 2004-02-03 Amkor Technology, Inc. Multi-chip semiconductor package with integral shield and antenna
JP3865601B2 (ja) 2001-06-12 2007-01-10 日東電工株式会社 電磁波抑制体シート
JP3645197B2 (ja) 2001-06-12 2005-05-11 日東電工株式会社 半導体装置およびそれに用いる半導体封止用エポキシ樹脂組成物
US6740959B2 (en) 2001-08-01 2004-05-25 International Business Machines Corporation EMI shielding for semiconductor chip carriers
US6856007B2 (en) * 2001-08-28 2005-02-15 Tessera, Inc. High-frequency chip packages
TW550997B (en) 2001-10-18 2003-09-01 Matsushita Electric Ind Co Ltd Module with built-in components and the manufacturing method thereof
KR100431180B1 (ko) * 2001-12-07 2004-05-12 삼성전기주식회사 표면 탄성파 필터 패키지 제조방법
JP2003273571A (ja) 2002-03-18 2003-09-26 Fujitsu Ltd 素子間干渉電波シールド型高周波モジュール
US7633765B1 (en) 2004-03-23 2009-12-15 Amkor Technology, Inc. Semiconductor package including a top-surface metal layer for implementing circuit features
WO2004010499A1 (ja) 2002-07-19 2004-01-29 Matsushita Electric Industrial Co., Ltd. モジュール部品
JP3738755B2 (ja) * 2002-08-01 2006-01-25 日本電気株式会社 チップ部品を備える電子装置
US6740546B2 (en) 2002-08-21 2004-05-25 Micron Technology, Inc. Packaged microelectronic devices and methods for assembling microelectronic devices
JP4178880B2 (ja) 2002-08-29 2008-11-12 松下電器産業株式会社 モジュール部品
US6781231B2 (en) 2002-09-10 2004-08-24 Knowles Electronics Llc Microelectromechanical system package with environmental and interference shield
US7205647B2 (en) * 2002-09-17 2007-04-17 Chippac, Inc. Semiconductor multi-package module having package stacked over ball grid array package and having wire bond interconnect between stacked packages
US6962869B1 (en) 2002-10-15 2005-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. SiOCH low k surface protection layer formation by CxHy gas plasma treatment
US6998532B2 (en) 2002-12-24 2006-02-14 Matsushita Electric Industrial Co., Ltd. Electronic component-built-in module
US20040150097A1 (en) 2003-01-30 2004-08-05 International Business Machines Corporation Optimized conductive lid mounting for integrated circuit chip carriers
TWI235469B (en) 2003-02-07 2005-07-01 Siliconware Precision Industries Co Ltd Thermally enhanced semiconductor package with EMI shielding
US7187060B2 (en) * 2003-03-13 2007-03-06 Sanyo Electric Co., Ltd. Semiconductor device with shield
WO2004093505A2 (en) 2003-04-15 2004-10-28 Wavezero, Inc. Emi shielding for electronic component packaging
US6838776B2 (en) 2003-04-18 2005-01-04 Freescale Semiconductor, Inc. Circuit device with at least partial packaging and method for forming
JP4377157B2 (ja) 2003-05-20 2009-12-02 Ｎｅｃエレクトロニクス株式会社 半導体装置用パッケージ
US6867480B2 (en) * 2003-06-10 2005-03-15 Lsi Logic Corporation Electromagnetic interference package protection
TWI236118B (en) 2003-06-18 2005-07-11 Advanced Semiconductor Eng Package structure with a heat spreader and manufacturing method thereof
US7129422B2 (en) 2003-06-19 2006-10-31 Wavezero, Inc. EMI absorbing shielding for a printed circuit board
JP4206858B2 (ja) 2003-08-04 2009-01-14 双葉電子工業株式会社 電界電子放出素子
KR100541084B1 (ko) * 2003-08-20 2006-01-11 삼성전기주식회사 표면 탄성파 필터 패키지 제조방법 및 그에 사용되는패키지 시트
JP2005072095A (ja) 2003-08-20 2005-03-17 Alps Electric Co Ltd 電子回路ユニットおよびその製造方法
TWI236113B (en) * 2003-08-28 2005-07-11 Advanced Semiconductor Eng Semiconductor chip package and method for making the same
US7372151B1 (en) 2003-09-12 2008-05-13 Asat Ltd. Ball grid array package and process for manufacturing same
US6943423B2 (en) 2003-10-01 2005-09-13 Optopac, Inc. Electronic package of photo-image sensors in cellular phone camera modules, and the fabrication and assembly thereof
AU2003298315A1 (en) * 2003-11-24 2005-06-24 Telefonaktiebolaget Lm Ericsson (Publ) Frame synchronisation in a radio access network
US6992400B2 (en) * 2004-01-30 2006-01-31 Nokia Corporation Encapsulated electronics device with improved heat dissipation
US7276724B2 (en) 2005-01-20 2007-10-02 Nanosolar, Inc. Series interconnected optoelectronic device module assembly
US7327015B2 (en) 2004-09-20 2008-02-05 Advanced Semiconductor Engineering, Inc. Semiconductor device package
JP4453509B2 (ja) 2004-10-05 2010-04-21 パナソニック株式会社 シールドケースを装着された高周波モジュールとこの高周波モジュールを用いた電子機器
US7629674B1 (en) 2004-11-17 2009-12-08 Amkor Technology, Inc. Shielded package having shield fence
US7656047B2 (en) * 2005-01-05 2010-02-02 Advanced Semiconductor Engineering, Inc. Semiconductor device package and manufacturing method
US7633170B2 (en) * 2005-01-05 2009-12-15 Advanced Semiconductor Engineering, Inc. Semiconductor device package and manufacturing method thereof
JP2006190767A (ja) 2005-01-05 2006-07-20 Shinko Electric Ind Co Ltd 半導体装置
EP1860694A1 (en) 2005-03-16 2007-11-28 Yamaha Corporation Semiconductor device, semiconductor device manufacturing method and cover frame
US7446265B2 (en) * 2005-04-15 2008-11-04 Parker Hannifin Corporation Board level shielding module
EP1715520B1 (fr) * 2005-04-21 2010-03-03 St Microelectronics S.A. Dispositif de protection d'un circuit électronique
JP4614278B2 (ja) 2005-05-25 2011-01-19 アルプス電気株式会社 電子回路ユニット、及びその製造方法
US8186048B2 (en) 2007-06-27 2012-05-29 Rf Micro Devices, Inc. Conformal shielding process using process gases
US7451539B2 (en) * 2005-08-08 2008-11-18 Rf Micro Devices, Inc. Method of making a conformal electromagnetic interference shield
US7145084B1 (en) * 2005-08-30 2006-12-05 Freescale Semiconductor, Inc. Radiation shielded module and method of shielding microelectronic device
WO2007060784A1 (ja) 2005-11-28 2007-05-31 Murata Manufacturing Co., Ltd. 回路モジュールの製造方法および回路モジュール
DE102005057891B4 (de) 2005-12-02 2007-10-18 Gkss-Forschungszentrum Geesthacht Gmbh Verfahren und Vorrichtung zum Verbinden eines Kunstoff-Werkstücks mit einem weiteren Werkstück
US7445968B2 (en) * 2005-12-16 2008-11-04 Sige Semiconductor (U.S.), Corp. Methods for integrated circuit module packaging and integrated circuit module packages
US7342303B1 (en) 2006-02-28 2008-03-11 Amkor Technology, Inc. Semiconductor device having RF shielding and method therefor
DE102006019080B3 (de) 2006-04-25 2007-08-30 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Herstellungsverfahren für ein gehäustes Bauelement
US20080128890A1 (en) * 2006-11-30 2008-06-05 Advanced Semiconductor Engineering, Inc. Chip package and fabricating process thereof
TWI337399B (en) * 2007-01-26 2011-02-11 Advanced Semiconductor Eng Semiconductor package for electromagnetic shielding
JP5120266B6 (ja) 2007-01-31 2018-06-27 富士通セミコンダクター株式会社 半導体装置及びその製造方法
US7576415B2 (en) 2007-06-15 2009-08-18 Advanced Semiconductor Engineering, Inc. EMI shielded semiconductor package
US7745910B1 (en) 2007-07-10 2010-06-29 Amkor Technology, Inc. Semiconductor device having RF shielding and method therefor
US20090035895A1 (en) 2007-07-30 2009-02-05 Advanced Semiconductor Engineering, Inc. Chip package and chip packaging process thereof
US7651889B2 (en) * 2007-09-13 2010-01-26 Freescale Semiconductor, Inc. Electromagnetic shield formation for integrated circuit die package
EP2051298B1 (en) * 2007-10-18 2012-09-19 Sencio B.V. Integrated Circuit Package
US7989928B2 (en) 2008-02-05 2011-08-02 Advanced Semiconductor Engineering Inc. Semiconductor device packages with electromagnetic interference shielding
US8212339B2 (en) 2008-02-05 2012-07-03 Advanced Semiconductor Engineering, Inc. Semiconductor device packages with electromagnetic interference shielding
US8022511B2 (en) 2008-02-05 2011-09-20 Advanced Semiconductor Engineering, Inc. Semiconductor device packages with electromagnetic interference shielding
US8350367B2 (en) 2008-02-05 2013-01-08 Advanced Semiconductor Engineering, Inc. Semiconductor device packages with electromagnetic interference shielding
US8492883B2 (en) 2008-03-14 2013-07-23 Advanced Semiconductor Engineering, Inc. Semiconductor package having a cavity structure
US7906371B2 (en) * 2008-05-28 2011-03-15 Stats Chippac, Ltd. Semiconductor device and method of forming holes in substrate to interconnect top shield and ground shield
US7772046B2 (en) * 2008-06-04 2010-08-10 Stats Chippac, Ltd. Semiconductor device having electrical devices mounted to IPD structure and method for shielding electromagnetic interference
TWI453877B (zh) 2008-11-07 2014-09-21 Advanced Semiconductor Eng 內埋晶片封裝的結構及製程
US7829981B2 (en) * 2008-07-21 2010-11-09 Advanced Semiconductor Engineering, Inc. Semiconductor device packages with electromagnetic interference shielding
US8410584B2 (en) 2008-08-08 2013-04-02 Advanced Semiconductor Engineering, Inc. Semiconductor device packages with electromagnetic interference shielding
US20100110656A1 (en) 2008-10-31 2010-05-06 Advanced Semiconductor Engineering, Inc. Chip package and manufacturing method thereof
US7741151B2 (en) * 2008-11-06 2010-06-22 Freescale Semiconductor, Inc. Integrated circuit package formation
US20100207257A1 (en) 2009-02-17 2010-08-19 Advanced Semiconductor Engineering, Inc. Semiconductor package and manufacturing method thereof
US8110902B2 (en) 2009-02-19 2012-02-07 Advanced Semiconductor Engineering, Inc. Chip package and manufacturing method thereof
US8212340B2 (en) 2009-07-13 2012-07-03 Advanced Semiconductor Engineering, Inc. Chip package and manufacturing method thereof
US8378466B2 (en) 2009-11-19 2013-02-19 Advanced Semiconductor Engineering, Inc. Wafer-level semiconductor device packages with electromagnetic interference shielding
US8030750B2 (en) 2009-11-19 2011-10-04 Advanced Semiconductor Engineering, Inc. Semiconductor device packages with electromagnetic interference shielding
US8368185B2 (en) 2009-11-19 2013-02-05 Advanced Semiconductor Engineering, Inc. Semiconductor device packages with electromagnetic interference shielding
TWI497679B (zh) 2009-11-27 2015-08-21 Advanced Semiconductor Eng 半導體封裝件及其製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6566596B1 (en) * 1997-12-29 2003-05-20 Intel Corporation Magnetic and electric shielding of on-board devices
CN1856878A (zh) * 2003-09-25 2006-11-01 飞思卡尔半导体公司 形成半导体封装的方法及其结构

Also Published As

Publication number Publication date
CN101728364A (zh) 2010-06-09
TWI387070B (zh) 2013-02-21
TW201017857A (en) 2010-05-01
US20100109132A1 (en) 2010-05-06
CN101728363A (zh) 2010-06-09
TWI411086B (zh) 2013-10-01
US20100110656A1 (en) 2010-05-06
US8093690B2 (en) 2012-01-10
TW201017835A (en) 2010-05-01
US20120098109A1 (en) 2012-04-26
US8592958B2 (en) 2013-11-26
CN101728363B (zh) 2013-04-17

Similar Documents

Publication Publication Date Title
CN101728364B (zh) 芯片封装体及制作方法
CN105321933B (zh) 具有顺形电磁屏蔽结构的半导体封装件及其制造方法
CN101814484B (zh) 芯片封装体及其制作方法
KR101571526B1 (ko) 전자기 장애를 차폐하는 집적회로 패키지 시스템
TWI569398B (zh) 半導體元件封裝及其製作方法
US8043892B2 (en) Semiconductor die package and integrated circuit package and fabricating method thereof
US8008753B1 (en) System and method to reduce shorting of radio frequency (RF) shielding
US8432022B1 (en) Shielded embedded electronic component substrate fabrication method and structure
TWI358117B (en) Packaging structure and packaging method thereof
KR100369879B1 (ko) 반도체장치
CN106057688A (zh) 具有屏蔽件的集成电路封装系统及其制造方法
KR20180107877A (ko) 반도체 패키지 및 그의 제조 방법
CN104425286A (zh) Ic载板、具有该ic载板的半导体器件及制作方法
CN104347437A (zh) 制造半导体器件的方法
KR101369300B1 (ko) 방열성을 향상시킨 칩 온 필름 패키지
JP2013179246A (ja) 電子部品モジュール及び製造方法
US10916520B2 (en) Semiconductor device, and method of manufacturing the same
CN103098565A (zh) 元器件内置基板
US7199452B2 (en) Semiconductor device and manufacturing method for same
CN100483661C (zh) 防止芯片被干扰的封装方法及其封装结构
KR20130092807A (ko) 방열성을 향상시킨 칩 온 필름 패키지
KR101369298B1 (ko) 방열성을 향상시킨 칩 온 필름 패키지
JPH07221427A (ja) 表面実装用パッケージ及びパッケージ実装装置
JP4390362B2 (ja) テープキャリア型半導体装置
CN115116976A (zh) 半导体封装结构及其形成方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant