CN106601636B - 一种贴装预包封金属导通三维封装结构的工艺方法 - Google Patents
一种贴装预包封金属导通三维封装结构的工艺方法 Download PDFInfo
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- CN106601636B CN106601636B CN201611191648.7A CN201611191648A CN106601636B CN 106601636 B CN106601636 B CN 106601636B CN 201611191648 A CN201611191648 A CN 201611191648A CN 106601636 B CN106601636 B CN 106601636B
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- 239000002184 metal Substances 0.000 title claims abstract description 119
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 119
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 80
- 238000000034 method Methods 0.000 title claims abstract description 34
- 239000004033 plastic Substances 0.000 claims abstract description 75
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 238000005530 etching Methods 0.000 claims abstract description 15
- 238000000227 grinding Methods 0.000 claims abstract description 14
- 239000011229 interlayer Substances 0.000 claims abstract description 12
- 238000005520 cutting process Methods 0.000 claims abstract description 10
- 238000004080 punching Methods 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 31
- 239000005022 packaging material Substances 0.000 claims description 18
- 238000007639 printing Methods 0.000 claims description 9
- 229910000679 solder Inorganic materials 0.000 claims description 9
- 238000007747 plating Methods 0.000 claims description 5
- 238000005507 spraying Methods 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 230000006835 compression Effects 0.000 claims description 2
- 238000007906 compression Methods 0.000 claims description 2
- 238000005538 encapsulation Methods 0.000 abstract description 5
- 239000000463 material Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 1
- 230000009172 bursting Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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Abstract
本发明涉及一种贴装预包封金属导通三维封装结构的工艺方法,它包括以下步骤:步骤一、取金属板;步骤二、金属板冲切或蚀刻;步骤三,将导通金属柱框架包封;步骤四,开窗开槽;步骤五、取一基板,上面贴装有芯片;步骤六,贴合导通金属柱框架;步骤七,包封研磨;步骤八,无源器件贴装;步骤九,塑封植球;步骤十,切割。本发明能够埋入元器件提升整个封装功能集成度,此工艺方法使用预包封的整片金属柱框架或者单颗预包封金属柱作为层间导通,可以提高产品的可靠性能。
Description
技术领域
本发明涉及一种贴装预包封金属导通三维封装结构的工艺方法,属于半导体封装技术领域。
背景技术
针对半导体封装轻薄短小的要求,现在的金属引线框或者有机基板的封装都在朝两个方向努力:1、降低封装尺寸;2、功能集成。对于降低封装尺寸部分,可以改善的空间有限,所以封装行业内集中于提高功能集成度,就是将部分功能元器件或者其他电子器件以埋入的方式集成于基板内部,以扩大整个封装体的功能集成度,而由于埋入元器件之后的基板层间材料更加复杂多样,并且不同材料的热膨胀系数差异很大,导致整个基板的翘曲问题严重、分层加剧,甚至引起爆板的问题。
发明内容
本发明所要解决的技术问题是针对上述现有技术提供一种贴装预包封金属导通三维封装结构的工艺方法,它能够埋入元器件提升整个封装功能集成度,此工艺方法使用预包封的整片金属柱框架或者单颗预包封金属柱作为层间导通,可以提高产品的可靠性能。
本发明解决上述问题所采用的技术方案为:一种贴装预包封金属导通三维封装结构的工艺方法,所述方法包括以下步骤:
步骤一、取金属板
步骤二、金属板冲切或蚀刻
将金属板通过冲切或蚀刻形成导通金属柱框架,以便后续进行层间的导通;
步骤三,将导通金属柱框架包封
将导通金属柱框架中间镂空部分进行塑封,将金属柱周围用塑封料进行保护;
步骤四,开窗开槽
将塑封好的导通金属柱框架所需要的部分进行开窗;
步骤五、取一基板,上面贴装有芯片
步骤六,贴合导通金属柱框架
将导通金属柱框架用锡膏印刷或者导电胶贴合在基板上,和基板部分电性连接,开窗部分正好容置基板上的芯片;
步骤七,包封研磨
将基板正面采用塑封料进行塑封,并研磨露出导通金属柱框架表面;
步骤八,无源器件贴装
在研磨后的导通金属柱框架贴装无源器件;
步骤九,塑封植球
将完成无源器件贴装的基板表面进行塑封,在基板下表面植球;
步骤十,切割
将塑封好的基板切割成单颗产品。
一种贴装预包封金属导通三维封装结构的工艺方法,所述方法包括以下步骤:
步骤一、取金属板
步骤二、金属板冲切或蚀刻
将金属板通过冲切或蚀刻形成导通金属柱框架,以便后续进行层间的导通;
步骤三,将导通金属柱框架包封
将导通金属柱框架进行塑封,将金属柱周围以及上表面用塑封料进行保护;
步骤四,开窗开槽
将塑封好的导通金属柱框架所需要的部分进行开窗;
步骤五、贴合导通金属柱框架
取一基板,上面贴装有芯片,将导通金属柱框架用锡膏印刷或者导电胶贴合在基板上,和基板部分电性连接,开窗部分正好容置基板上的芯片;
步骤六,包封研磨
将基板正面采用塑封料进行塑封,并研磨露出导通金属柱框架表面;
步骤七,无源器件贴装 ,包封植球
在研磨后的金属柱板表面贴装无源器件,将完成无源器件贴装的基板表面进行塑封,在基板下表面植球;
步骤八,切割
将塑封好的基板切割成单颗产品。
一种贴装预包封金属导通三维封装结构的工艺方法,所述方法包括以下步骤:
步骤一、取金属板
步骤二、金属板表面电镀形成金属柱线路层
在金属板表面通过电镀的方式形成线路层,并且在线路层上方电镀形成导通铜柱;
步骤三,将金属柱线路层塑封
将金属板表面的金属柱线路层用塑封料进行保护;
步骤四,开窗
在塑封好的金属柱线路层所需要的部分进行开窗;
步骤五,去除金属板
步骤六、贴合金属柱线路层,塑封
取一基板,上面贴装有芯片,将金属柱线路层用锡膏印刷或者导电胶贴合在基板上,与基板部分电性连接,开窗部分正好容置基板上的芯片,将露出的芯片部分进行塑封保护,并研磨暴露出金属柱线路层的上表面;
步骤七,无源器件贴装 ,包封植球
在金属柱线路层的上表面贴装无源器件,将完成无源器件贴装的基板表面进行塑封,在基板下表面植球;
步骤八,切割
将塑封好的基板切割成单颗产品。
所述基板上贴装有单颗芯片、被动元器件或散热器件或多颗组合。
所述塑封方式采用模具灌胶方式、压缩灌胶、喷涂方式或是用贴膜方式。
与现有技术相比,本发明的优点在于:
1、本发明的三维封装结构的工艺流程,在基板中间的夹层制作过程中埋入对象,可以根据系统或功能需要在需要的位置或是区域埋入主动或被动元器件,封装整合的系统功能多,从而同样功能的元器件模块在PCB板上占用的空间比较少,从而降低成本又提升了封装的集成度;
2、本发明的工艺流程,通过预包封金属柱框架进行层间的导通,可以增加金属柱与塑封料的结合性,在后续制程中包封的时候预包封的塑封料可起到缓冲的作用,可以避免由于金属和塑封料的收缩率不同而引起的分层、垂直性裂缝等缺陷;
3、本发明的三维系统封装结构,使用预包封的金属柱框架,该框架设计的自由度比较高,可根据不同封装要求设计层间导通的线路,适用性极广。
附图说明
图1~图10为本发明一种贴装预包封金属导通三维封装结构的工艺方法实施例1的各工序示意图。
图11~图18为本发明一种贴装预包封金属导通三维封装结构的工艺方法实施例2的各工序示意图。
图19~图26为本发明一种贴装预包封金属导通三维封装结构的工艺方法实施例3的各工序示意图。
具体实施方式
以下结合附图实施例对本发明作进一步详细描述。
实施例1:
本发明一种贴装预包封金属导通三维封装结构的工艺方法,它包括如下工艺步骤:
步骤一、取金属板
参见图1,取一片厚度合适的金属板;
步骤二、金属板冲切或蚀刻
参见图2,将金属板通过冲切或蚀刻形成导通金属柱框架,以便后续进行层间的导通,冲切和蚀刻的形状可以多样化,可以形成金属柱或者其他不规则形状,也可形成简单的线路形状;
步骤三,将导通金属柱框架包封
参见图3,将导通金属柱框架中间镂空部分进行塑封,将金属柱周围用塑封料进行保护,金属柱上下表面不用塑封;
步骤四,开窗开槽
参见图4,将塑封好的导通金属柱框架所需要的部分进行开窗;
步骤五、取一基板,上面贴装有芯片
参见图5,取一基板,上面贴装有芯片、被动元器件或散热器件等单颗或多颗组合;
步骤六,贴合导通金属柱框架
参见图6,将导通金属柱框架用锡膏印刷或者导电胶贴合在基板上,和基板部分电性连接,开窗部分正好容置基板上的芯片;
步骤七,包封研磨
参见图7,将基板正面采用塑封料进行塑封,塑封方式可以采用模具灌胶方式、压缩灌胶、喷涂方式或是用贴膜方式,所述可以采用有填料物质或是无填料物质的环氧树脂,并研磨露出导通金属柱框架表面。此步骤可省略。
步骤八,无源器件贴装
参见图8,在研磨后的导通金属柱框架贴装无源器件,当然不局限于无源器件,可贴装所需功能芯片或者整个封装体;
步骤九,塑封植球
参见图9,将完成无源器件贴装的基板表面进行塑封,在基板下表面植球;
步骤十,切割
参见图10,将塑封好的基板切割成单颗产品。
实施例2:
本发明一种贴装预包封金属导通三维封装结构的工艺方法,它包括如下工艺步骤:
步骤一、取金属板
参见图11,取一片厚度合适的金属板;
步骤二、金属板冲切或蚀刻
参见图12,将金属板通过冲切或蚀刻形成导通金属柱框架,以便后续进行层间的导通,冲切和蚀刻的形状可以多样化,可以形成金属柱或者其他不规则形状,也可形成简单的线路形状;
步骤三,将导通金属柱框架包封
参见图13,将导通金属柱框架进行塑封,将金属柱周围以及上表面用塑封料进行保护,此塑封方式简单,用常规的塑封模具即可实现;
步骤四,开窗开槽
参见图14,将塑封好的导通金属柱框架所需要的部分进行开窗;
步骤五、贴合导通金属柱框架
参见图15,取一基板,上面贴装有芯片、被动元器件或散热器件等单颗或多颗组合,将导通金属柱框架用锡膏印刷或者导电胶贴合在基板上,和基板部分电性连接,开窗部分正好容置基板上的芯片;
步骤六,包封研磨
参见图16,将基板正面采用塑封料进行塑封,塑封方式可以采用模具灌胶方式、压缩灌胶、喷涂方式或是用贴膜方式,所述可以采用有填料物质或是无填料物质的环氧树脂,并研磨露出导通金属柱框架表面。此步骤可省略;
步骤七,无源器件贴装 ,包封植球
参见图17,在研磨后的金属柱板表面贴装无源器件,当然不局限于无源器件,可贴装所需功能芯片或者整个封装体,将完成无源器件贴装的基板表面进行塑封,在基板下表面植球。
步骤八,切割
参见图18,将塑封好的基板切割成单颗产品。
实施例3:
步骤一、取金属板
参见图19,取一片厚度合适的金属板;
步骤二、金属板表面电镀形成金属柱线路层
参见图20,在金属板表面通过电镀的方式形成线路层,并且在线路层上方电镀形成导通铜柱;
步骤三,将金属柱线路层塑封
参见图21,将金属板表面的金属柱线路层用塑封料进行保护;
步骤四,开窗
参见图22,在塑封好的金属柱线路层所需要的部分进行开窗;
步骤五,去除金属板
参见图23,将金属板去除,余下的金属柱线路层依旧是整体框架形状;
步骤六、贴合金属柱线路层,塑封
参见图24,取一基板,上面贴装有芯片、被动元器件或散热器件等单颗或多颗组合,将金属柱线路层用锡膏印刷或者导电胶贴合在基板上,与基板部分电性连接,开窗部分正好容置基板上的芯片,将露出的芯片部分进行塑封保护,并研磨暴露出金属柱线路层的上表面;
步骤七,无源器件贴装 ,包封植球
参见图17,在金属柱线路层的上表面贴装无源器件,当然不局限于无源器件,可贴装所需功能芯片或者整个封装体,将完成无源器件贴装的基板表面进行塑封,在基板下表面植球;
步骤八,切割
参见图18,将塑封好的基板切割成单颗产品。
除上述实施例外,本发明还包括有其他实施方式,凡采用等同变换或者等效替换方式形成的技术方案,均应落入本发明权利要求的保护范围之内。
Claims (5)
1.一种贴装预包封金属导通三维封装结构的工艺方法,其特征在于所述方法包括以下步骤:
步骤一、取金属板
步骤二、金属板冲切或蚀刻
将金属板通过冲切或蚀刻形成导通金属柱框架,以便后续进行层间的导通;
步骤三,将导通金属柱框架包封
将导通金属柱框架中间镂空部分进行塑封,将金属柱周围用塑封料进行保护;
步骤四,开窗开槽
将塑封好的导通金属柱框架所需要的部分进行开窗;
步骤五、取一基板,上面贴装有芯片
步骤六,贴合导通金属柱框架
将导通金属柱框架用锡膏印刷或者导电胶贴合在基板上,和基板部分电性连接,开窗部分正好容置基板上的芯片;
步骤七,包封研磨
将基板正面采用塑封料进行塑封,并研磨露出导通金属柱框架表面;
步骤八,无源器件贴装
在研磨后的导通金属柱框架贴装无源器件;
步骤九,塑封植球
将完成无源器件贴装的基板表面进行塑封,在基板下表面植球;
步骤十,切割
将塑封好的基板切割成单颗产品。
2.一种贴装预包封金属导通三维封装结构的工艺方法,其特征在于所述方法包括以下步骤:
步骤一、取金属板
步骤二、金属板冲切或蚀刻
将金属板通过冲切或蚀刻形成导通金属柱框架,以便后续进行层间的导通;
步骤三,将导通金属柱框架包封
将导通金属柱框架进行塑封,将金属柱周围以及上表面用塑封料进行保护;
步骤四,开窗开槽
将塑封好的导通金属柱框架所需要的部分进行开窗;
步骤五、贴合导通金属柱框架
取一基板,上面贴装有芯片,将导通金属柱框架用锡膏印刷或者导电胶贴合在基板上,和基板部分电性连接,开窗部分正好容置基板上的芯片;
步骤六,包封研磨
将基板正面采用塑封料进行塑封,并研磨露出导通金属柱框架表面;
步骤七,无源器件贴装,包封植球
在研磨后的导通金属柱框架表面贴装无源器件,将完成无源器件贴装的基板表面进行塑封,在基板下表面植球;
步骤八,切割
将塑封好的基板切割成单颗产品。
3.一种贴装预包封金属导通三维封装结构的工艺方法,其特征在于所述方法包括以下步骤:
步骤一、取金属板
步骤二、金属板表面电镀形成金属柱线路层
在金属板表面通过电镀的方式形成线路层,并且在线路层上方电镀形成导通铜柱;
步骤三,将金属柱线路层塑封
将金属板表面的金属柱线路层用塑封料进行保护;
步骤四,开窗
在塑封好的金属柱线路层所需要的部分进行开窗;
步骤五,去除金属板
步骤六、贴合金属柱线路层,塑封
取一基板,上面贴装有芯片,将金属柱线路层用锡膏印刷或者导电胶贴合在基板上,与基板部分电性连接,开窗部分正好容置基板上的芯片,将露出的芯片部分进行塑封保护,并研磨暴露出金属柱线路层的上表面;
步骤七,无源器件贴装,包封植球
在金属柱线路层的上表面贴装无源器件,将完成无源器件贴装的基板表面进行塑封,在基板下表面植球;
步骤八,切割
将塑封好的基板切割成单颗产品。
4.根据权利要求1或2或3所述的一种贴装预包封金属导通三维封装结构的工艺方法,其特征在于:所述基板上贴装有芯片、被动元器件或散热器件单颗或多颗组合 。
5.根据权利要求1或2或3所述的一种贴装预包封金属导通三维封装结构的工艺方法,其特征在于:所述塑封方式采用模具灌胶方式、压缩灌胶、喷涂方式或是用贴膜方式。
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