CN105321867A - 一种互联载板的制作方法 - Google Patents
一种互联载板的制作方法 Download PDFInfo
- Publication number
- CN105321867A CN105321867A CN201510613442.8A CN201510613442A CN105321867A CN 105321867 A CN105321867 A CN 105321867A CN 201510613442 A CN201510613442 A CN 201510613442A CN 105321867 A CN105321867 A CN 105321867A
- Authority
- CN
- China
- Prior art keywords
- support plate
- mucous membrane
- supporting film
- plate
- interconnected support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 22
- 230000008016 vaporization Effects 0.000 claims abstract description 5
- 210000004400 mucous membrane Anatomy 0.000 claims description 46
- 239000003566 sealing material Substances 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 12
- 238000004806 packaging method and process Methods 0.000 claims description 7
- 238000011049 filling Methods 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 6
- 238000007639 printing Methods 0.000 claims description 6
- 239000011159 matrix material Substances 0.000 claims description 4
- 238000009834 vaporization Methods 0.000 claims description 4
- 239000004593 Epoxy Substances 0.000 claims description 3
- 239000004952 Polyamide Substances 0.000 claims description 3
- NPAXBRSUVYCZGM-UHFFFAOYSA-N carbonic acid;propane-1,2-diol Chemical compound OC(O)=O.CC(O)CO NPAXBRSUVYCZGM-UHFFFAOYSA-N 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- DLNKOYKMWOXYQA-APPZFPTMSA-N phenylpropanolamine Chemical compound C[C@@H](N)[C@H](O)C1=CC=CC=C1 DLNKOYKMWOXYQA-APPZFPTMSA-N 0.000 claims description 3
- 229920002647 polyamide Polymers 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 238000007711 solidification Methods 0.000 claims description 3
- 230000008023 solidification Effects 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 229920001774 Perfluoroether Polymers 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- DLNKOYKMWOXYQA-UHFFFAOYSA-N dl-pseudophenylpropanolamine Natural products CC(N)C(O)C1=CC=CC=C1 DLNKOYKMWOXYQA-UHFFFAOYSA-N 0.000 claims description 2
- 229960000395 phenylpropanolamine Drugs 0.000 claims description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 2
- 239000000741 silica gel Substances 0.000 claims description 2
- 229910002027 silica gel Inorganic materials 0.000 claims description 2
- -1 polytetrafluoroethylene Polymers 0.000 claims 1
- 239000004810 polytetrafluoroethylene Substances 0.000 claims 1
- 238000000465 moulding Methods 0.000 abstract description 7
- 239000010408 film Substances 0.000 abstract 6
- 239000010409 thin film Substances 0.000 abstract 5
- 150000001875 compounds Chemical class 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 229940032159 propylene carbonate Drugs 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
本发明公开了一种互联载板的制作方法,其包括:放置下辅助板;在下辅助板上形成高温可汽化或粘度可降低的粘膜;在所述粘膜上形成金属层;图形化所述金属层,形成目标互联载板所需的载板线路;在形成的所述载板线路正上方,安装并压紧吸附了辅助薄膜的上模板,使得所述载板线路位于所述粘膜与所述辅助薄膜之间;在被粘膜和所述辅助薄膜压紧的载板线路的空隙中填充模塑封料,并在所述模塑封料固化之后去除所述上模板及辅助薄膜;将去除所述上模板及辅助薄膜后的工序装置放置于使粘膜汽化或粘度可降低的温度环境里,使得所述粘膜完成汽化或粘度降低至互联载板可不损伤地分离下辅助板;取下所述互联载板,对其进行烘干和冷却,得到目标互联载板。
Description
技术领域
本发明涉及互联引线框架及电路板制造技术领域,特别是涉及一种互联载板的制作方法。
背景技术
随着芯片封装产业的不断发展,封装器件体积逐渐变小,封装行业对芯片互联载板的尺寸、线路层密集度及成本也有了更高的要求。一方面,传统的引线框架具有灵活布置线路的优势,然而其无法满足封装器件对引脚数量过大的要求,特别是引脚数多排化、阵列化的要求;另一方面,传统的印制电路板(PCB)基板技术,发展得非常成熟,一定程度上在尺寸及阵列化引脚等方面可以满足需求,然而由于其热匹配特性的限制,如PCB基板的热膨胀系数(CTE)与封装材料的CTE差异较大,很容易出现如封装此外,无论是引线框架还是PCB基板技术,在实现独立基板铜柱的工艺方器件分层开裂等方面的质量问题,特别对功率器件更是如此;面都存在技术瓶颈,无法满足封装器件日益提高的要求。
部分现有封装互联工艺采用了UV胶作为剥离膜,可以实现较复杂的互联,但是工序装置在剥离辅助板时需要至少有一面能够透过紫外线光,且剥离辅助板后需要额外的清洗步骤。
模塑封互联载板是一种新的互联载板形式,但是,现有工艺技术多数基于传统模塑封工艺,且在刻蚀、磨削、激光切割、二次蚀刻、二次塑封等工艺步骤的协助下完成,这些复杂的加工工艺流程使得互联载板产品容易出现表面污染、成品率低、成本高的问题。为解决传统工艺技术的瓶颈和现有技术方案的不足,很有必要开发一种加工流程简单、成品率高、成本低的工艺方法。
发明内容
本发明针对目前技术的不足,提供一种互联载板的制作方法。与现有技术不同的是,本发明提出的所述互联载板的制作方法利用高温可汽化或粘度可降低的粘膜临时固定图形化的载板线路,并结合辅助薄膜模塑封工艺直接完成封装,制造出互联载板。
为实现上述目的,本发明提出了一种互联载板的制作方法,其包括:
步骤1:放置下辅助板;
步骤2:在下辅助板上形成高温可汽化或粘度可降低的粘膜;
步骤3:在所述粘膜上形成金属层;
步骤4:图形化所述金属层,形成目标互联载板所需的载板线路;
步骤5:在形成的所述载板线路正上方,安装并压紧吸附了辅助薄膜的上模板,使得所述载板线路位于所述粘膜与所述辅助薄膜之间;
步骤6:在被粘膜和所述辅助薄膜压紧的载板线路的空隙中填充模塑封料,并在所述模塑封料固化之后去除所述上模板及辅助薄膜;
步骤7:将去除所述上模板及辅助薄膜后的工序装置放置于使粘膜汽化或粘度可降低的温度环境里,使得所述粘膜完成汽化或粘度降低至互联载板可不损伤地分离下辅助板;
步骤8:取下所述互联载板,对其进行烘干和冷却,得到目标互联载板。
与现有的技术相比,本发明提出的互联载板的制作方法,避免了对成型的互联载板进行研磨、切割、二次蚀刻、二次塑封等加工步骤。本发明简化了工艺流程,提高了成品率,且很好地控制了产品的清洁度,具有成本低,通用性强的特点。
此外,本发明提出的互联载板的制作方法适用于精密互联载板的加工,还可应用于形成芯片埋入式的互联载板,在实现高密度、高集成度的晶圆级及系统级封装领域也具有很好的应用价值。
附图说明
图1为本发明中互联载板线的制作方法流程图;
图2为本发明实施例中下辅助板结构示意图;
图3为本发明实施例中下辅助板上粘贴完粘膜的工序示意图;
图4为本发明实施例中粘膜上粘上金属层的工序示意图;
图5为本发明实施例中完成载板线路制作的工序示意图;
图6为本发明实施例中安装吸附有辅助薄膜的上模板的工序示意图;
图7为本发明实施例中模塑封完成并取下上模板及辅助薄膜后的工序示意图;
图8为本发明实施例中目标互联载板结构示意图;
图中:1下辅助板,2粘膜,3金属层,4载板线路,5上模板,6辅助薄膜,7模塑封料
具体实施方式
为使本发明的目的、技术方案和优点更加清楚明白,以下结合具体实施例,并参照附图,对本发明作进一步的详细说明。
本发明提出了一种互联载板的制作方法,如图1所示,其包括:
步骤1:放置下辅助板;
步骤2:在下辅助板上形成高温可汽化或粘度可降低的粘膜;
可选地,所述粘膜可以是碳酸丙二醇酯(propylenecarbonate)、聚碳酸酯(Polycarbonates)、或聚合物(polymer)基材料等,通过粘贴或涂覆的方式形成在下辅助板上。
步骤3:在所述粘膜上形成金属层;
可选地,所述金属可以是铜、金、银、镍、锡、铝、钯、铁等。
可选地,通过在所述粘膜上铺贴、沉积、电镀、化学镀、溅射、印刷或打印等方式形成金属层。
步骤4:图形化所述金属层,形成目标互联载板所需的载板线路;
可选地,通过刻蚀等方式使所述金属层图形化;
步骤5:在形成的所述载板线路正上方,安装并压紧吸附了辅助薄膜的上模板,使得所述载板线路位于所述粘膜与所述辅助薄膜之间;
可选地,所述辅助薄膜可以是聚酰胺(Polymide)、聚四氟乙烯(Teflon)或聚全氟烷氧基(PFA)材料;所述上模板可以是钢、铁等刚性材料。
步骤6:在被粘膜和所述辅助薄膜压紧的载板线路的空隙中填充模塑封料,并在所述模塑封料固化之后去除所述上模板及辅助薄膜;
可选地,所述模塑封料可以是环氧树脂基模塑封材料(EMC)、硅胶、或盐酸苯丙醇胺(PPA),其固化温度条件为50-400度,压力为0-100MPa;
步骤7:将去除所述上模板及辅助薄膜后的工序装置放置于使粘膜汽化或粘度可降低的温度环境里(可选地,温度范围为90-400度),使得所述粘膜完成汽化或粘度降低至互联载板可不损伤地分离下辅助板;
步骤8:取下所述互联载板,对其进行烘干和冷却,得到目标互联载板。
其中,所述高温可汽化或粘度可降低的粘膜的两面在低温条件下的粘附性可使金属层或载板线路在下辅助板的粘接位置不变;其中所述低温条件的温度为低于填充模塑封料的温度。
所述高温可汽化或粘度可降低的粘膜在高温条件下其可变成气体、水蒸气而被去除,或其粘度可降低至互联载板可不损伤地分离下辅助板;所述使粘膜可汽化或粘度可降低的温度为高于填充模塑封料的温度。
所述辅助薄膜在高温下(如模塑封温度下)可变软,并具有延展性;
所述辅助薄膜具有可防止载板线路上表面不被模塑封料污染的作用,且其不与上模板、互联载板粘接。
所述被压紧的载板线路上下表面分别贴紧辅助薄膜和高温可汽化或粘度可降低的粘膜,保证不被模塑封料污染。
下面以制作载板线路为阵列岛屿式金属柱结构的互联载板为例,详细说明本发明。
本实施例的目标互联载板的载板线路4为阵列岛屿式金属柱结构,实现该互联载板的制作方法,包括如下步骤:
1)放置下辅助板1,如图1所示;
2)在下辅助板1上粘贴(或涂敷)高温可汽化的粘膜2,如图2所示;本实施例的粘膜2材料为碳酸丙二醇酯;
3)在所述粘膜2上铺贴放置金属层3(或通过沉积、电镀、化学镀、溅射、印刷或打印方法生成金属层3),如图3所示;本实施例的金属层3材料为铜;
4)对金属层3进行刻蚀,得到目标互联载板所需要的阵列岛屿式载板线路4,如图4所示;
5)在载板线路4正上方,安装并压紧已经吸附了辅助薄膜6的上模板5,如图5所示;本实施例的辅助薄膜6为聚酰胺(Polymide)材料,其在模塑封温度下可变软并具有延展性;此外,本实施例的上模板5材料为钢;
6)对被高温可汽化的粘膜2与辅助薄膜6压紧的载板线路4的空腔填充模塑封料7,并在模塑封料7固化之后去除上模板5及辅助薄膜6,如图6所示;本实施例的模塑封料7为环氧树脂基模塑封材料(EMC),其固化温度为175度,压力0.5-10MPa;
7)将去除上模板5后的工序装置放置于使粘膜2汽化的温度环境里,使粘膜2完成汽化,从而互联载板可不损伤地分离下辅助板1;本实施例的使粘膜2汽化的温度环境为190度;
8)取下模塑封互联载板,烘干、冷却,得到目标互联载板,如图7所示。
所述高温可汽化的粘膜2的两面在低温条件下的粘附性可使金属层3或载板线路4在下辅助板1的粘接位置不变;其中所述低温条件的温度为低于填充模塑封料7的温度175度;
所述高温可汽化的粘膜2在高温190度条件下其可变成气体或水蒸气而被去除;
所述的使粘膜2汽化的温度为高于填充模塑封料7的温度175度;
所述辅助薄膜6具有可防止载板线路4上表面不被模塑封料7污染的作用,且其不与上模板6、互联载板粘接;
所述被压紧的载板线路4上下表面分别贴紧辅助薄膜6和高温可汽化的粘膜2,保证不被模塑封料7污染;
本实施例所述高温可汽化的粘膜2也可以替换为粘度可降低的粘膜2,即在高温条件下粘膜2的粘度可降低至互联载板可不损伤地分离下辅助板1;
本实施例所述目标互联载板的载板线路4也可以为单层线路或多层线路结构;
以上所述的具体实施例,对本发明的目的、技术方案和有益效果进行了进一步详细说明,应理解的是,以上所述仅为本发明的具体实施例而已,并不用于限制本发明,凡在本发明的精神和原则之内,所做的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (10)
1.一种互联载板的制作方法,其包括:
步骤1:放置下辅助板;
步骤2:在下辅助板上形成高温可汽化或粘度可降低的粘膜;
步骤3:在所述粘膜上形成金属层;
步骤4:图形化所述金属层,形成目标互联载板所需的载板线路;
步骤5:在形成的所述载板线路正上方,安装并压紧吸附了辅助薄膜的上模板,使得所述载板线路位于所述粘膜与所述辅助薄膜之间;
步骤6:在被粘膜和所述辅助薄膜压紧的载板线路的空隙中填充模塑封料,并在所述模塑封料固化之后去除所述上模板及辅助薄膜;
步骤7:将去除所述上模板及辅助薄膜后的工序装置放置于使粘膜汽化或粘度可降低的温度环境里,使得所述粘膜完成汽化或粘度降低至互联载板可不损伤地分离下辅助板;
步骤8:取下所述互联载板,对其进行烘干和冷却,得到目标互联载板。
2.如权利要求1所述的方法,其中,所述辅助薄膜在高温条件下可变软,且具有延展性。
3.如权利要求2所述的方法,其中,所述辅助薄膜采用聚酰胺、聚四氟乙烯和聚全氟烷氧基中的一种或几种的组合。
4.如权利要求1所述的方法,其中,所述上模板为刚性材料。
5.如权利要求1所述的方法,其中,所述模塑封料采用环氧树脂基模塑封材料、硅胶和盐酸苯丙醇胺中的一种或几种的组合。
6.如权利要求1-5任一项所述的方法,其中,所述粘膜的两面在低温条件下的粘附性使金属层或载板线路在下辅助板的粘接位置不变,所述低温条件的温度为低于填充模塑封料的温度。
7.如权利要求1-5任一项所述的方法,其中,所述高温可汽化或粘度可降低的粘膜在高温条件下其可变成气体或水蒸气而被去除,且所述使粘膜汽化的温度为高于填充模塑封料的温度。
8.如权利要求1-5所述的方法,其中,所述粘膜采用碳酸丙二醇酯、聚碳酸酯和聚合物基材料中一种或几种的组合,通过粘贴或涂覆的方式形成在下辅助板上。
9.如权利要求1所述的方法,其中,所述辅助薄膜不予所述上模板和互联载板粘接。
10.如权利要求1所述的方法,其中,所述金属层是通过铺贴、沉积、电镀、化学镀、溅射、印刷或打印的方式形成。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510613442.8A CN105321867B (zh) | 2015-09-23 | 2015-09-23 | 一种互联载板的制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510613442.8A CN105321867B (zh) | 2015-09-23 | 2015-09-23 | 一种互联载板的制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105321867A true CN105321867A (zh) | 2016-02-10 |
CN105321867B CN105321867B (zh) | 2017-12-29 |
Family
ID=55248978
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510613442.8A Active CN105321867B (zh) | 2015-09-23 | 2015-09-23 | 一种互联载板的制作方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN105321867B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105655273A (zh) * | 2016-03-18 | 2016-06-08 | 京东方科技集团股份有限公司 | 一种封装方法和一种封装装置 |
CN106128965A (zh) * | 2016-07-27 | 2016-11-16 | 桂林电子科技大学 | 一种无基板封装器件的制作方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1722391A (zh) * | 2000-05-04 | 2006-01-18 | 通用半导体爱尔兰公司 | 使用粘结剂制造半导体器件 |
US20090096088A1 (en) * | 2007-10-15 | 2009-04-16 | Marco Francesco Aimi | Sealed wafer packaging of microelectromechanical systems |
CN104455418A (zh) * | 2014-11-13 | 2015-03-25 | 苏州誉之铖贸易有限责任公司 | 一种新型抗压耐磨o型密封圈 |
-
2015
- 2015-09-23 CN CN201510613442.8A patent/CN105321867B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1722391A (zh) * | 2000-05-04 | 2006-01-18 | 通用半导体爱尔兰公司 | 使用粘结剂制造半导体器件 |
US20090096088A1 (en) * | 2007-10-15 | 2009-04-16 | Marco Francesco Aimi | Sealed wafer packaging of microelectromechanical systems |
CN104455418A (zh) * | 2014-11-13 | 2015-03-25 | 苏州誉之铖贸易有限责任公司 | 一种新型抗压耐磨o型密封圈 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105655273A (zh) * | 2016-03-18 | 2016-06-08 | 京东方科技集团股份有限公司 | 一种封装方法和一种封装装置 |
CN105655273B (zh) * | 2016-03-18 | 2019-03-12 | 京东方科技集团股份有限公司 | 一种封装方法和一种封装装置 |
CN106128965A (zh) * | 2016-07-27 | 2016-11-16 | 桂林电子科技大学 | 一种无基板封装器件的制作方法 |
Also Published As
Publication number | Publication date |
---|---|
CN105321867B (zh) | 2017-12-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN208045473U (zh) | 芯片封装结构 | |
US10615056B2 (en) | Method of packaging chip and chip package structure | |
CN101499445B (zh) | 半导体器件及其制造方法 | |
CN104637912B (zh) | 在用于容纳电子芯片的衬底上的导电框 | |
JP6654994B2 (ja) | 回路部品の製造方法 | |
CN101375389B (zh) | 用于电路管芯的高热性能封装 | |
JP2019512168A (ja) | シリコン基板に埋め込まれたファンアウト型の3dパッケージ構造 | |
CN104465418B (zh) | 一种扇出晶圆级封装方法 | |
TWI796522B (zh) | 半導體器件封裝方法及半導體器件 | |
CN104952828A (zh) | 覆晶堆叠封装结构及其制作方法 | |
KR20080075482A (ko) | 반도체 장치의 제조 방법 | |
CN104966677A (zh) | 扇出型芯片封装器件及其制备方法 | |
CN103985695A (zh) | 一种扇出型封装结构及其制作工艺 | |
US10043680B2 (en) | Method for manufacturing semiconductor device | |
CN106128965A (zh) | 一种无基板封装器件的制作方法 | |
CN103972111A (zh) | 引线框架结构的形成方法 | |
CN105321867A (zh) | 一种互联载板的制作方法 | |
JP3893301B2 (ja) | 半導体装置の製造方法および半導体モジュールの製造方法 | |
CN106601636B (zh) | 一种贴装预包封金属导通三维封装结构的工艺方法 | |
CN105140138A (zh) | 一种电磁屏蔽封装方法及其封装结构 | |
CN206742235U (zh) | 芯片尺寸封装 | |
CN113078071A (zh) | 一种降低芯片位置偏移的板级封装方法 | |
CN103972113A (zh) | 封装方法 | |
TW202036812A (zh) | 半導體裝置封裝方法及半導體裝置 | |
TW201630136A (zh) | 複合式電路板及其製作方法,以及半導體封裝結構 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20160210 Assignee: Guilin Xinyi Semiconductor Technology Co.,Ltd. Assignor: GUILIN University OF ELECTRONIC TECHNOLOGY Contract record no.: X2023980046246 Denomination of invention: A Manufacturing Method for Interconnected Carrier Board Granted publication date: 20171229 License type: Common License Record date: 20231108 |
|
EE01 | Entry into force of recordation of patent licensing contract |