WO2018113574A1 - 一种贴装预包封金属导通三维封装结构的工艺方法 - Google Patents

一种贴装预包封金属导通三维封装结构的工艺方法 Download PDF

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Publication number
WO2018113574A1
WO2018113574A1 PCT/CN2017/116051 CN2017116051W WO2018113574A1 WO 2018113574 A1 WO2018113574 A1 WO 2018113574A1 CN 2017116051 W CN2017116051 W CN 2017116051W WO 2018113574 A1 WO2018113574 A1 WO 2018113574A1
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Prior art keywords
metal
substrate
conducting
conductive
circuit layer
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PCT/CN2017/116051
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English (en)
French (fr)
Inventor
孔海申
林煜斌
沈锦新
梁新夫
周青云
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江苏长电科技股份有限公司
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Priority to US16/472,160 priority Critical patent/US10763128B2/en
Publication of WO2018113574A1 publication Critical patent/WO2018113574A1/zh

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Definitions

  • the invention relates to a process method for mounting a pre-encapsulated metal conduction three-dimensional package structure, and belongs to the technical field of semiconductor packaging.
  • the current metal lead frame or organic substrate package is working in two directions: 1. Reduce package size; 2. Functional integration.
  • the space that can be improved is limited, so the focus of the packaging industry is to improve the functional integration, that is, to integrate some functional components or other electronic devices into the substrate in a buried manner to expand the function of the entire package.
  • the degree of integration, and the material between the substrate layers after embedding the components is more complicated and diverse, and the thermal expansion coefficients of different materials are greatly different, resulting in serious warpage of the entire substrate, stratification, and even a problem of blasting.
  • the technical problem to be solved by the present invention is to provide a method for mounting a pre-encapsulated metal-conducting three-dimensional package structure for the above prior art, which can embed components to improve the integration degree of the entire package function, and the process method uses pre-packaging.
  • the sealed whole metal column frame or a single pre-encapsulated metal column is used as the interlayer conduction to improve the reliability of the product.
  • the technical solution adopted by the present invention to solve the above problems is: a method for mounting a pre-encapsulated metal-conducting three-dimensional package structure, the method comprising the following steps:
  • Step one take the metal plate
  • Step 2 punching or etching the metal plate
  • Step 3 enclosing the conductive metal column frame
  • the hollow portion of the conductive metal column frame is plastically sealed, and the metal column is surrounded by a plastic sealing material for protection;
  • Step four open the window slot
  • Step 5 Take a substrate with a chip mounted thereon
  • Step six fitting the conductive metal column frame
  • the conductive metal pillar frame is soldered with a solder paste or a conductive adhesive on the substrate, and is electrically connected to the substrate portion, and the window opening portion directly accommodates the chip on the substrate;
  • the front side of the substrate is plastically sealed with a molding compound, and is ground to expose the surface of the conductive metal column frame;
  • Step eight passive device placement
  • the surface of the substrate on which the passive device is mounted is plastically sealed, and the ball is implanted on the lower surface of the substrate;
  • the molded substrate is cut into individual products.
  • a method for mounting a pre-encapsulated metal-conducting three-dimensional package structure comprising the steps of:
  • Step one take the metal plate
  • Step 2 punching or etching the metal plate
  • Step 3 enclosing the conductive metal column frame
  • the conductive metal column frame is plastically sealed, and the periphery and the upper surface of the metal column are protected by a molding compound;
  • Step four open the window slot
  • Step 5 Fit the conductive metal column frame
  • the conductive metal pillar frame is soldered with a solder paste or a conductive adhesive on the substrate, and is electrically connected to the substrate portion, and the window opening portion directly accommodates the chip on the substrate;
  • the front side of the substrate is plastically sealed with a molding compound, and is ground to expose the surface of the conductive metal column frame;
  • Step seven passive device placement, encapsulation
  • a passive device is mounted on the surface of the polished metal column plate, and the surface of the substrate on which the passive device is mounted is plastically sealed, and the ball is implanted on the lower surface of the substrate;
  • the molded substrate is cut into individual products.
  • a method for mounting a pre-encapsulated metal-conducting three-dimensional package structure comprising the steps of:
  • Step one take the metal plate
  • Step 2 plating the surface of the metal plate to form a metal pillar circuit layer
  • Step three plastic sealing the metal column circuit layer
  • Step four open the window
  • Step six fitting the metal column circuit layer, plastic sealing
  • the metal pillar circuit layer is soldered with a solder paste or a conductive adhesive on the substrate, and is electrically connected to the substrate portion, and the window opening portion directly accommodates the chip on the substrate, and the exposed chip Partially protected by plastic seals and ground to expose the upper surface of the metal post circuit layer;
  • Step seven passive device placement, encapsulation
  • a passive device is mounted on the upper surface of the metal pillar circuit layer, and the surface of the substrate on which the passive component is mounted is plastically sealed, and the ball is implanted on the lower surface of the substrate;
  • the molded substrate is cut into individual products.
  • a single chip, a passive component or a heat sink component or a plurality of combinations are attached to the substrate.
  • the plastic sealing method adopts a mold filling method, a compression filling glue, a spraying method or a film coating method.
  • the process flow of the three-dimensional package structure of the present invention embeds an object in the process of interlayer fabrication in the middle of the substrate, and can embed active or passive components in a required position or region according to system or function requirements, and package integrated system functions. More, so the same function of the component module takes up less space on the PCB, thereby reducing the cost and improving the integration of the package;
  • the process flow of the invention can increase the bonding between the metal column and the molding compound by pre-encapsulating the metal column frame to conduct the interlayer conduction, and the pre-encapsulated molding material can be used when encapsulating in the subsequent process.
  • the function of buffering can avoid defects such as delamination and vertical cracks caused by different shrinkage rates of metal and plastic molding materials;
  • the three-dimensional system package structure of the present invention uses a pre-encapsulated metal column frame, which has a relatively high degree of freedom in design, and can design a layer-to-layer conduction line according to different packaging requirements, and has wide applicability.
  • FIG. 10 are schematic diagrams showing the steps of a first embodiment of a process for mounting a pre-encapsulated metal-conducting three-dimensional package structure according to the present invention.
  • FIG. 11 to FIG. 18 are schematic diagrams showing respective steps of a second embodiment of a method for mounting a pre-encapsulated metal-conducting three-dimensional package structure according to the present invention.
  • FIG. 19 to FIG. 26 are schematic diagrams showing the steps of a third embodiment of a method for mounting a pre-encapsulated metal-conducting three-dimensional package structure according to the present invention.
  • the invention discloses a process for pre-encapsulating a metal-conducting three-dimensional package structure, which comprises the following process steps:
  • Step one take the metal plate
  • Step 2 punching or etching the metal plate
  • the metal plate is punched or etched to form a conductive metal pillar frame for subsequent conduction between layers, and the shape of die cutting and etching can be diversified, and metal pillars or other irregular shapes can be formed.
  • Step 3 enclosing the conductive metal column frame
  • the hollow portion of the conductive metal column frame is plastically sealed, and the metal column is surrounded by a plastic sealing material, and the upper and lower surfaces of the metal column are not plastically sealed;
  • Step four open the window slot
  • Step 5 Take a substrate with a chip mounted thereon
  • a substrate is mounted with a single or multiple combinations of chips, passive components or heat sink components;
  • Step six fitting the conductive metal column frame
  • the conductive metal pillar frame is soldered with a solder paste or a conductive adhesive on the substrate, and is electrically connected to the substrate portion, and the window opening portion directly accommodates the chip on the substrate;
  • the front surface of the substrate is plastically sealed by a molding compound
  • the plastic sealing method may be a mold filling method, a compression filling method, a spraying method or a film coating method
  • the molding material may be a ring material with or without a filler material. Oxygen resin and ground to expose the surface of the conductive metal column frame. This step can be omitted.
  • Step eight passive device placement
  • the mounted conductive metal post frame is mounted with a passive device, and is of course not limited to a passive device, and the desired functional chip or the entire package can be mounted;
  • the surface of the substrate on which the passive device is mounted is plastically sealed, and the ball is implanted on the lower surface of the substrate;
  • the molded substrate is cut into individual products.
  • the invention discloses a process for pre-encapsulating a metal-conducting three-dimensional package structure, which comprises the following process steps:
  • Step one take the metal plate
  • Step 2 punching or etching the metal plate
  • the metal plate is punched or etched to form a conductive metal pillar frame for subsequent conduction between layers, and the shape of the punching and etching can be diversified, and a metal pillar or other irregular shape can be formed.
  • Step 3 enclosing the conductive metal column frame
  • the conductive metal column frame is plastically sealed, and the periphery and the upper surface of the metal column are protected by a molding compound.
  • the plastic sealing method is simple, and can be realized by a conventional plastic sealing mold;
  • Step four open the window slot
  • Step 5 Fit the conductive metal column frame
  • a substrate is attached with a single or a plurality of combinations of chips, passive components or heat sink members, and the conductive metal pillar frame is soldered with a solder paste or a conductive adhesive on the substrate, and the substrate portion is attached. Electrically connected, the window opening portion just accommodates the chip on the substrate;
  • the front side of the substrate is plastically sealed by a molding compound
  • the plastic sealing method may be a mold filling method, a compression filling method, a spraying method or a film coating method
  • the molding material may be a ring material with or without a filler material. Oxygen resin and ground to expose the surface of the conductive metal column frame. This step can be omitted;
  • Step seven passive device placement, encapsulation
  • a passive device is mounted on the surface of the polished metal pillar plate, and of course, it is not limited to a passive device, and the required functional chip or the entire package can be mounted to mold the surface of the substrate on which the passive component is mounted. , the ball is implanted on the lower surface of the substrate.
  • the molded substrate is cut into individual products.
  • Step one take the metal plate
  • Step 2 plating the surface of the metal plate to form a metal pillar circuit layer
  • a wiring layer is formed on the surface of the metal plate by electroplating, and a conductive copper pillar is formed by plating over the wiring layer;
  • Step three plastic sealing the metal column circuit layer
  • the metal post circuit layer on the surface of the metal plate is protected with a molding compound
  • Step four open the window
  • the window is opened in the required portion of the plasticized metal post circuit layer
  • the metal plate is removed, and the remaining metal post circuit layer is still in the shape of the overall frame;
  • Step six fitting the metal column circuit layer, plastic sealing
  • a substrate is attached with a single or multiple combinations of chips, passive components or heat sink members, and the metal pillar circuit layer is soldered with a solder paste or a conductive adhesive on the substrate, and the substrate is partially electrically charged.
  • the window opening portion just accommodates the chip on the substrate, and the exposed chip portion is plastically sealed and polished to expose the upper surface of the metal post circuit layer;
  • Step seven passive device placement, encapsulation
  • a passive device is mounted on the upper surface of the metal post circuit layer, and of course, it is not limited to a passive device, and the required functional chip or the entire package can be mounted to mold the surface of the substrate on which the passive device is mounted. , planting a ball on the lower surface of the substrate;
  • the molded substrate is cut into individual products.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Insulated Metal Substrates For Printed Circuits (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)

Abstract

一种贴装预包封金属导通三维封装结构的工艺方法，包括步骤：取金属板；金属板冲切或蚀刻；将导通金属柱框架包封；开窗开槽；取一基板，上面贴装有芯片；贴合导通金属柱框架；包封研磨；无源器件贴装；塑封植球；切割；该方法能够提升集成度及可靠性能。

Description

一种贴装预包封金属导通三维封装结构的工艺方法
本申请要求了申请日为2016年12月21日，申请号为201611191648.7，发明名称为“一种贴装预包封金属导通三维封装结构的工艺方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本发明涉及一种贴装预包封金属导通三维封装结构的工艺方法，属于半导体封装技术领域。
背景技术
针对半导体封装轻薄短小的要求，现在的金属引线框或者有机基板的封装都在朝两个方向努力：1、降低封装尺寸；2、功能集成。对于降低封装尺寸部分，可以改善的空间有限，所以封装行业内集中于提高功能集成度，就是将部分功能元器件或者其他电子器件以埋入的方式集成于基板内部，以扩大整个封装体的功能集成度，而由于埋入元器件之后的基板层间材料更加复杂多样，并且不同材料的热膨胀系数差异很大，导致整个基板的翘曲问题严重、分层加剧，甚至引起爆板的问题。
发明内容
本发明所要解决的技术问题是针对上述现有技术提供一种贴装预包封金属导通三维封装结构的工艺方法，它能够埋入元器件提升整个封装功能集成度，此工艺方法使用预包封的整片金属柱框架或者单颗预包封金属柱作为层间导通，可以提高产品的可靠性能。
本发明解决上述问题所采用的技术方案为：一种贴装预包封金属导通三维封装结构的工艺方法，所述方法包括以下步骤：
步骤一、取金属板
步骤二、金属板冲切或蚀刻
将金属板通过冲切或蚀刻形成导通金属柱框架，以便后续进行层间的导通；
步骤三，将导通金属柱框架包封
将导通金属柱框架中间镂空部分进行塑封，将金属柱周围用塑封料进行保护；
步骤四，开窗开槽
将塑封好的导通金属柱框架所需要的部分进行开窗；
步骤五、取一基板，上面贴装有芯片
步骤六，贴合导通金属柱框架
将导通金属柱框架用锡膏印刷或者导电胶贴合在基板上，和基板部分电性连接，开窗部分正好容置基板上的芯片；
步骤七，包封研磨
将基板正面采用塑封料进行塑封，并研磨露出导通金属柱框架表面；
步骤八，无源器件贴装
在研磨后的导通金属柱框架贴装无源器件；
步骤九，塑封植球
将完成无源器件贴装的基板表面进行塑封，在基板下表面植球；
步骤十，切割
将塑封好的基板切割成单颗产品。
一种贴装预包封金属导通三维封装结构的工艺方法，所述方法包括以下步骤：
步骤一、取金属板
步骤二、金属板冲切或蚀刻
将金属板通过冲切或蚀刻形成导通金属柱框架，以便后续进行层间的导通；
步骤三，将导通金属柱框架包封
将导通金属柱框架进行塑封，将金属柱周围以及上表面用塑封料进行保护；
步骤四，开窗开槽
将塑封好的导通金属柱框架所需要的部分进行开窗；
步骤五、贴合导通金属柱框架
取一基板，上面贴装有芯片，将导通金属柱框架用锡膏印刷或者导电胶贴合在基板上，和基板部分电性连接，开窗部分正好容置基板上的芯片；
步骤六，包封研磨
将基板正面采用塑封料进行塑封，并研磨露出导通金属柱框架表面；
步骤七，无源器件贴装，包封植球
在研磨后的金属柱板表面贴装无源器件，将完成无源器件贴装的基板表面进行塑封，在基板下表面植球；
步骤八，切割
将塑封好的基板切割成单颗产品。
一种贴装预包封金属导通三维封装结构的工艺方法，所述方法包括以下步骤：
步骤一、取金属板
步骤二、金属板表面电镀形成金属柱线路层
在金属板表面通过电镀的方式形成线路层，并且在线路层上方电镀形成导通铜柱；
步骤三，将金属柱线路层塑封
将金属板表面的金属柱线路层用塑封料进行保护；
步骤四，开窗
在塑封好的金属柱线路层所需要的部分进行开窗；
步骤五，去除金属板
步骤六、贴合金属柱线路层，塑封
取一基板，上面贴装有芯片，将金属柱线路层用锡膏印刷或者导电胶贴合在基板上，与基板部分电性连接，开窗部分正好容置基板上的芯片，将露出的芯片部分进行塑封保护，并研磨暴露出金属柱线路层的上表面；
步骤七，无源器件贴装，包封植球
在金属柱线路层的上表面贴装无源器件，将完成无源器件贴装的基板表面进行塑封，在基板下表面植球；
步骤八，切割
将塑封好的基板切割成单颗产品。
所述基板上贴装有单颗芯片、被动元器件或散热器件或多颗组合。
所述塑封方式采用模具灌胶方式、压缩灌胶、喷涂方式或是用贴膜方式。
与现有技术相比，本发明的优点在于：
1、本发明的三维封装结构的工艺流程，在基板中间的夹层制作过程中埋入对象，可以根据系统或功能需要在需要的位置或是区域埋入主动或被动元器件，封装整合的系统功能多，从而同样功能的元器件模块在PCB板上占用的空间比较少，从而降低成本又提升了封装的集成度；
2、本发明的工艺流程，通过预包封金属柱框架进行层间的导通，可以增加金属柱与塑封料的结合性，在后续制程中包封的时候预包封的塑封料可起到缓冲的作用，可以避免由于金属和塑封料的收缩率不同而引起的分层、垂直性裂缝等缺陷；
3、本发明的三维系统封装结构，使用预包封的金属柱框架，该框架设计的自由度比较高，可根据不同封装要求设计层间导通的线路，适用性极广。
附图说明
图1～图10为本发明一种贴装预包封金属导通三维封装结构的工艺方法实施例1的各工序示意图。
图11～图18为本发明一种贴装预包封金属导通三维封装结构的工艺方法实施例2的各工序示意图。
图19～图26为本发明一种贴装预包封金属导通三维封装结构的工艺方法实施例3的各工序示意图。
具体实施方式
以下结合附图实施例对本发明作进一步详细描述。
实施例1：
本发明一种贴装预包封金属导通三维封装结构的工艺方法，它包括如下工艺步骤：
步骤一、取金属板
参见图1，取一片厚度合适的金属板；
步骤二、金属板冲切或蚀刻
参见图2，将金属板通过冲切或蚀刻形成导通金属柱框架，以便后续进行层间的导通，冲切和蚀刻的形状可以多样化，可以形成金属柱或者其他不规则形状，也可形成简单的线路形状；
步骤三，将导通金属柱框架包封
参见图3，将导通金属柱框架中间镂空部分进行塑封，将金属柱周围用塑封料进行保护，金属柱上下表面不用塑封；
步骤四，开窗开槽
参见图4，将塑封好的导通金属柱框架所需要的部分进行开窗；
步骤五、取一基板，上面贴装有芯片
参见图5，取一基板，上面贴装有芯片、被动元器件或散热器件等单颗或多颗组合；
步骤六，贴合导通金属柱框架
参见图6，将导通金属柱框架用锡膏印刷或者导电胶贴合在基板上，和基板部分电性连接，开窗部分正好容置基板上的芯片；
步骤七，包封研磨
参见图7，将基板正面采用塑封料进行塑封，塑封方式可以采用模具灌胶方式、压缩灌胶、喷涂方式或是用贴膜方式，所述塑封料可以采用有填料物质或是无填料物质的环氧树脂，并研磨露出导通金属柱框架表面。此步骤可省略。
步骤八，无源器件贴装
参见图8，在研磨后的导通金属柱框架贴装无源器件，当然不局限于无源器件，可贴装所需功能芯片或者整个封装体；
步骤九，塑封植球
参见图9，将完成无源器件贴装的基板表面进行塑封，在基板下表面植球；
步骤十，切割
参见图10，将塑封好的基板切割成单颗产品。
实施例2：
本发明一种贴装预包封金属导通三维封装结构的工艺方法，它包括如下工艺步骤：
步骤一、取金属板
参见图11，取一片厚度合适的金属板；
步骤二、金属板冲切或蚀刻
参见图12，将金属板通过冲切或蚀刻形成导通金属柱框架，以便后续进行层间的导通，冲切和蚀刻的形状可以多样化，可以形成金属柱或者其他不规则形状，也可形成简单的线路形状；
步骤三，将导通金属柱框架包封
参见图13，将导通金属柱框架进行塑封，将金属柱周围以及上表面用塑封料进行保护，此塑封方式简单，用常规的塑封模具即可实现；
步骤四，开窗开槽
参见图14，将塑封好的导通金属柱框架所需要的部分进行开窗；
步骤五、贴合导通金属柱框架
参见图15，取一基板，上面贴装有芯片、被动元器件或散热器件等单颗或多颗组合，将导通金属柱框架用锡膏印刷或者导电胶贴合在基板上，和基板部分电性连接，开窗部分正好容置基板上的芯片；
步骤六，包封研磨
参见图16，将基板正面采用塑封料进行塑封，塑封方式可以采用模具灌胶方式、压缩灌胶、喷涂方式或是用贴膜方式，所述塑封料可以采用有填料物质或是无填料物质的环氧树脂，并研磨露出导通金属柱框架表面。此步骤可省略；
步骤七，无源器件贴装，包封植球
参见图17，在研磨后的金属柱板表面贴装无源器件，当然不局限于无源器件，可贴装所需功能芯片或者整个封装体，将完成无源器件贴装的基板表面进行塑封，在基板下表面植球。
步骤八，切割
参见图18，将塑封好的基板切割成单颗产品。
实施例3：
步骤一、取金属板
参见图19，取一片厚度合适的金属板；
步骤二、金属板表面电镀形成金属柱线路层
参见图20，在金属板表面通过电镀的方式形成线路层，并且在线路层上方电镀形成导通铜柱；
步骤三，将金属柱线路层塑封
参见图21，将金属板表面的金属柱线路层用塑封料进行保护；
步骤四，开窗
参见图22，在塑封好的金属柱线路层所需要的部分进行开窗；
步骤五，去除金属板
参见图23，将金属板去除，余下的金属柱线路层依旧是整体框架形状；
步骤六、贴合金属柱线路层，塑封
参见图24，取一基板，上面贴装有芯片、被动元器件或散热器件等单颗或多颗组合，将金属柱线路层用锡膏印刷或者导电胶贴合在基板上，与基板部分电性连接，开窗部分正好容置基板上的芯片，将露出的芯片部分进行塑封保护，并研磨暴露出金属柱线路层的上表面；
步骤七，无源器件贴装，包封植球
参见图17，在金属柱线路层的上表面贴装无源器件，当然不局限于无源器件，可贴装所需功能芯片或者整个封装体，将完成无源器件贴装的基板表面进行塑封，在基板下表面植球；
步骤八，切割
参见图18，将塑封好的基板切割成单颗产品。
除上述实施例外，本发明还包括有其他实施方式，凡采用等同变换或者等效替换方式形成的技术方案，均应落入本发明权利要求的保护范围之内。

Claims (8)

  1. 一种贴装预包封金属导通三维封装结构的工艺方法，其特征在于所述方法包括以下步骤：
    步骤一、取金属板
    步骤二、金属板冲切或蚀刻
    将金属板通过冲切或蚀刻形成导通金属柱框架，以便后续进行层间的导通；
    步骤三，将导通金属柱框架包封
    步骤四，开窗开槽
    将塑封好的导通金属柱框架所需要的部分进行开窗；
    步骤五、取一基板，上面贴装有芯片
    步骤六，贴合导通金属柱框架
    将导通金属柱框架用锡膏印刷或者导电胶贴合在基板上，和基板部分电性连接，开窗部分正好容置基板上的芯片；
    步骤七，包封研磨
    将基板正面采用塑封料进行塑封，并研磨露出导通金属柱框架表面；
    步骤八，无源器件贴装
    在研磨后的导通金属柱框架贴装无源器件；
    步骤九，塑封植球
    将完成无源器件贴装的基板表面进行塑封，在基板下表面植球；
    步骤十，切割
    将塑封好的基板切割成单颗产品。
  2. 根据权利要求1所述的一种贴装预包封金属导通三维封装结构的工艺方法，其特征在于步骤三具体为：将导通金属柱框架中间镂空部分进行塑封，将金属柱周围用塑封料进行保护。
  3. 根据权利要求1所述的一种贴装预包封金属导通三维封装结构的工艺方法，其特征在于步骤三具体为：将导通金属柱框架进行塑封，将金属柱周围以及上表面用塑封料进行保护。
  4. 根据权利要求1所述的一种贴装预包封金属导通三维封装结构的工艺方法，其特征在于：所述基板上贴装有单颗芯片、被动元器件或散热器件或多颗组合。
  5. 根据权利要求1所述的一种贴装预包封金属导通三维封装结构的工艺方法，其特征在于：所述塑封方式采用模具灌胶方式、压缩灌胶、喷涂方式或是用贴膜方式。
  6. 一种贴装预包封金属导通三维封装结构的工艺方法，其特征在于所述方法包括 以下步骤：
    步骤一、取金属板
    步骤二、金属板表面电镀形成金属柱线路层
    在金属板表面通过电镀的方式形成线路层，并且在线路层上方电镀形成导通铜柱；
    步骤三，将金属柱线路层塑封
    将金属板表面的金属柱线路层用塑封料进行保护；
    步骤四，开窗
    在塑封好的金属柱线路层所需要的部分进行开窗；
    步骤五，去除金属板
    步骤六、贴合金属柱线路层，塑封
    取一基板，上面贴装有芯片，将金属柱线路层用锡膏印刷或者导电胶贴合在基板上，与基板部分电性连接，开窗部分正好容置基板上的芯片，将露出的芯片部分进行塑封保护，并研磨暴露出金属柱线路层的上表面；
    步骤七，无源器件贴装，包封植球
    在金属柱线路层的上表面贴装无源器件，将完成无源器件贴装的基板表面进行塑封，在基板下表面植球；
    步骤八，切割
    将塑封好的基板切割成单颗产品。
  7. 根据权利要求6所述的一种贴装预包封金属导通三维封装结构的工艺方法，其特征在于：所述基板上贴装有单颗芯片、被动元器件或散热器件或多颗组合。
  8. 根据权利要求6所述的一种贴装预包封金属导通三维封装结构的工艺方法，其特征在于：所述塑封方式采用模具灌胶方式、压缩灌胶、喷涂方式或是用贴膜方式。
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