WO2004070808A1 - プラズマ処理装置及びプラズマ処理装置用の電極板及び電極板製造方法 - Google Patents
プラズマ処理装置及びプラズマ処理装置用の電極板及び電極板製造方法 Download PDFInfo
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- WO2004070808A1 WO2004070808A1 PCT/JP2004/001042 JP2004001042W WO2004070808A1 WO 2004070808 A1 WO2004070808 A1 WO 2004070808A1 JP 2004001042 W JP2004001042 W JP 2004001042W WO 2004070808 A1 WO2004070808 A1 WO 2004070808A1
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- electrode
- plasma
- dielectric
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- processing apparatus
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- 238000000034 method Methods 0.000 title claims description 17
- 230000005684 electric field Effects 0.000 claims abstract description 69
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 238000012545 processing Methods 0.000 claims description 137
- 239000004065 semiconductor Substances 0.000 claims description 27
- 238000004519 manufacturing process Methods 0.000 claims description 22
- 239000012530 fluid Substances 0.000 claims description 13
- 239000004020 conductor Substances 0.000 claims description 12
- 238000005507 spraying Methods 0.000 claims description 12
- 239000003989 dielectric material Substances 0.000 claims description 11
- 230000007423 decrease Effects 0.000 claims description 10
- 239000007787 solid Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 239000007772 electrode material Substances 0.000 claims description 3
- 239000003960 organic solvent Substances 0.000 claims description 3
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- 230000005540 biological transmission Effects 0.000 claims 1
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- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000009832 plasma treatment Methods 0.000 abstract 1
- 238000009826 distribution Methods 0.000 description 54
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- 230000000052 comparative effect Effects 0.000 description 27
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- 238000001020 plasma etching Methods 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 230000004048 modification Effects 0.000 description 9
- 238000012986 modification Methods 0.000 description 9
- 239000002344 surface layer Substances 0.000 description 9
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- 239000010410 layer Substances 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 230000002500 effect on skin Effects 0.000 description 5
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical compound [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
Definitions
- the electric field intensity at the center of the electrode main surface becomes higher than the electric field intensity at the edge. Therefore, the density of the generated plasma is also higher on the electrode center side than on the electrode edge side.
- the resistivity of the plasma decreases at the center of the electrode having a high plasma density, and the current concentrates at the center of the electrode even at the opposing electrode, thereby increasing the non-uniformity of the plasma density.
- a high-frequency electrode in which a central portion of a main surface is formed of a high-resistance member (for example, Japanese Patent Application Laid-Open No. 2000-3234556).
- the center of the main surface (plasma contact surface) of the electrode connected to the high-frequency power supply is made of a high-resistance member. More high frequency power with this high resistance material As a result, the electric field strength on the main surface of the electrode is relatively reduced at the center of the electrode rather than at the outer periphery of the electrode. Thereby, the non-uniformity of the plasma density as described above is corrected.
- Another object of the present invention is to provide an electrode plate manufacturing method capable of efficiently manufacturing a structure in which an electrostatic check is integrally provided on an electrode plate for a plasma processing apparatus according to the present invention.
- a high frequency current is applied from the back side to the first electrode by a skin effect, and the high frequency current flows from the electrode edge to the center of the electrode on the main surface of the first electrode.
- the high frequency current flows through the surface layer of the convex portion. Since the protruding portion protrudes toward the plasma space side, it is electrically coupled to the plasma with a lower impedance than the portion other than the protruding portion, ie, the bottom surface of the main surface. For this reason, the high-frequency power carried by the watt-frequency current flowing through the surface layer on the main surface of the electrode is mainly emitted toward the plasma from the top surface of the projection.
- the protrusions in a columnar shape, or to form the protrusions in a ring shape and arrange them in a
- a first electrode is provided in a processing vessel fin that can be depressurized, a high-frequency electric field is formed in the processing container, and a processing gas is supplied to generate a plasma of the processing gas.
- a large number of concave portions are provided discretely in a direction facing the space in which the plasma is generated.
- the high frequency may be supplied from the main surface of the first electrode and the back surface on the opposite side.
- the height of the recess and the width in the electrode radial direction on the main surface of the first electrode are three times the skin depth ⁇ .
- the concave portion may be formed in a columnar shape.
- a small amount is formed on the main surface of the first electrode. ⁇ It is preferable to provide a dielectric in H0
- the preferable profile of the dielectric material is such that the thickness of the dielectric material gradually decreases (more preferably, in an arch shape) from the electrode center side of the first electrode toward the electrode edge side. It is a configuration. Further, a configuration in which the thickness of the dielectric is substantially constant inside the first diameter including the center of the electrode is also preferable. In this case, outside the first diameter, the thickness of the dielectric may be tapered toward the electrode edge side or may be larger than the first diameter. The outer diameter may be substantially constant inside the second diameter, and may decrease in a tapered shape toward the electrode edge portion outside the second diameter.
- the area size of the dielectric may be arbitrarily set according to the size of the substrate to be processed, but typically can be set to substantially the same size.
- the first electrode is grounded. Even when grounded to a potential, the same effect as described above can be exerted on the plasma generation space.
- the first electrode plate for the plasma processing apparatus of the present invention is disposed in a processing vessel in order to generate plasma in the high frequency discharge type plasma processing apparatus. A large number of projections are provided discretely.
- the electrode plate having such a configuration can exhibit the same operation as the first or second electrode in the first plasma processing apparatus.
- FIG. 1 is a longitudinal sectional view showing a configuration of a plasma etching apparatus according to one embodiment of the present invention.
- FIG. 3 is a partially enlarged longitudinal sectional view showing the susceptor structure according to the first embodiment.
- FIG. 12A to 12F are views showing a method of manufacturing the susceptor structure with an electrostatic chuck in FIG. 10 in the order of steps.
- FIG. 22 shows the radial electric field intensity between the electrodes with the film thickness at the center of the upper electrode as a parameter in the parallel plate electrode structure of Fig. 21.
- FIG. 4 is a view showing a cloth.
- FIGS. 25A to 25D are diagrams showing another specific example of the film thickness of the upper electrode dielectric film according to the third embodiment.
- FIGS. 26A and 26B show FIG. 1 showing radial electric field intensity distribution characteristics between electrodes obtained by the embodiment of FIGS. 25A to 25D.
- FIG. 1 is a longitudinal sectional view showing a configuration of a plasma etching apparatus according to an embodiment of the present invention.
- An exhaust passage 2 is provided between the side wall of the channel 10 and the cylindrical support 16.
- a refrigerant chamber 44 extending in a circumferential direction is provided inside the susceptor 12.
- a refrigerant at a predetermined temperature for example, cooling water is circulated and supplied from the chiller unit 46 to the refrigerant chamber 44 via the pipings 48 and 50.
- the processing temperature of the semiconductor wafer W on the electrostatic chuck 40 can be controlled by the temperature of the coolant.
- the heat transfer gas for example, He gas from the heat transfer gas supply unit 52 is supplied to the upper surface of the electrostatic chuck 40 via the gas supply line 54 and the semiconductor wafer.
- the susceptor lower electrode
- the width size of the protrusion 70 is also important. In order to allow the high-frequency current i to flow sufficiently to the top surface of the projection 70, the larger the width size in the electrode radial direction, the better. Width of at least three times the skin depth ⁇ , preferably at a frequency of 10
- An electrode film 40a is formed on the lower insulating film 40b, and an upper insulating film 40c is formed on the electrode film 40a.
- the ratio S 2 a / S 7. Is preferably selected to be 4 (times) or less.
- the material of the convex portion 70 for example, aluminum (A 1) is sprayed on the entire main surface of the susceptor body 12 from the upper force of the mask 74.
- the opening 74a of the mask 74 is filled with aluminum up to the height of the upper surface of the mask.
- a dielectric material for example, alumina is sprayed on the electrode film 40 a over the entire main surface of the susceptor body 12.
- the upper insulating film 40C of the electrostatic chuck 40 is formed to have a predetermined thickness (D4: for example, 200m).
- FIG. 13 is a view showing a modification of the susceptor structure according to the first embodiment.
- a large number of annular projections 70 are arranged concentrically. That is, even in the susceptor structure shown in FIG. 13, when the high-frequency current flows from the electrode edge portion toward the center, the high-frequency power is more efficient from the convex portion 70 having a lower impedance than the bottom portion 12a. It is released to the plasma PZ side.
- the area density of the projections 70 is a distribution characteristic that gradually increases from the center of the electrode to the edge of the electrode.
- the configuration in which 0 is discretely provided can be applied to the counter electrode, that is, the upper electrode 38, as shown in FIG.
- the upper electrode 38 transmits the high-frequency current of the plasma PZ force. Convex as the main
- a dielectric 82 is disposed in the recess 80.
- a large number of concave portions 80 discretely HX-shaped on the main surface of the susceptor 12 function as electrode mask portions for suppressing the supply of high-frequency power to the plasma PZ. I do.
- the 80 attributes shape, size, spacing, density, etc.
- the high-frequency power supply characteristics of the susceptor 12 can be controlled to desired characteristics.
- the distribution characteristics such that the number density of the concave portions 80 becomes gradually smaller from the center of the electrode toward the electrode edge.
- the uniformity (particularly radial uniformity) of the high-frequency power or high-frequency electric field applied to the plasma PZ from the susceptor 12 can be improved, and the uniformity of the plasma density can be improved.
- the other attributes of the concave portion 80 can be basically handled in the same manner as the convex portion 70 in the first embodiment.
- the depth size and the width size of the concave portion 80 are skinned. It can be set to a value that is at least three times the depth ⁇ .
- FIGS. 18A to 18F show a method of manufacturing a structure in which an electrostatic chuck is provided integrally with the electrode structure according to the second embodiment in the order of steps.
- an open P portion 84 a corresponding to the concave portion 80 is formed on the main surface of the susceptor main body (electrode substrate) 12 made of, for example, a rubber.
- a mask made of resin 84 is placed.
- the planar shape and the planar size of the opening portion 84a define the planar shape and the planar size of the concave portion 80.
- the mask 84 is removed from the main surface of the susceptor body 12.
- a large number of H0 portions 80 of a predetermined size are discretely left on the main surface of the susceptor body 12 in a fl pattern for a predetermined amount.
- an electrode material for electrostatic chuck for example, tungsten (W) is sprayed on the dielectric film 40 b over the entire main surface of the susceptor body 12.
- an electrode film 40a having a predetermined thickness is formed.
- a dielectric material for example, alumina is sprayed on the electrode film 40 a over the entire main surface of the susceptor body 12.
- the upper insulating film 40c is formed to a predetermined thickness.
- the dielectric 82 for filling the concave portion 80 on the main surface of the susceptor main body 12 and the lower insulating film 40b constituting a part of the electrostatic chuck 40 are formed once. It can be integrally formed at the same time in the spraying process.
- FIGS. 19 and 20 are plan views showing a lower electrode structure and an upper electrode structure la, respectively, according to the third embodiment.
- FIG. 19 shows an example of a configuration in which the third embodiment is applied to a susceptor 12.
- FIG. 20 shows the third embodiment with the upper electrode 8 (more precisely, the electrode plate 5).
- FIG. 23A to FIG. 23D are diagrams showing more specific examples of the film thickness profile of the dielectric film of the upper electrode in the third embodiment.
- FIGS. 24A and 24B are diagrams showing radial electric field intensity distribution characteristics between electrodes obtained by the embodiment of FIGS. 23A to 23D and the ideal profile, respectively.
- the thickness D of the dielectric film 90 is set to 0 to 5 111 111 (flat) from 0 to 250 111 111.
- D 9 mm (flat) from ⁇ 0 to 30 mm
- D 5 to 3 mm (taper) from ⁇ 30 to 250 ⁇ I do.
- Figure 23D shows the profiles of Examples [5], [6], and [ 7 ] in a simple curve.
- Example [6] closest to the ideal profile was in-plane. Most excellent in uniformity.
- Example [5] is also sufficiently practical. That is, even in a profile in which the film thickness D of the dielectric film 90 decreases almost linearly or in a tapered shape from the center of the electrode to the edge of the electrode as in the embodiment [6], the arch may not be formed. In-plane uniformity close to the ideal profile of the mold is obtained. Further, even in the case of the profile in which the thickness D of the dielectric film 90 is substantially constant (flat) from the center of the electrode to the electrode edge portion as in the embodiment [5], the profile is practical. In-plane uniformity is obtained.
- FIGS. 27A to 27C are diagrams showing another specific example of the film thickness and film quality profile of the dielectric film of the upper electrode in the third embodiment.
- FIGS. 28A and 28B are diagrams showing radial electric field intensity distribution characteristics between electrodes obtained by the examples of FIGS. 27A to 27C.
- D 9 mm (flat), ⁇ 30 to ⁇ 30 ⁇ ⁇
- FIGS. 32A and 32B are diagrams showing the etching rate distribution characteristics of the organic film etching by comparing Example A of FIG. 31A with Comparative Example B of FIG. 31B.
- the etching speed distribution characteristics (X direction, Y direction) of the organic film etching using the plasma etching apparatus (FIG. 1) of the embodiment are shown.
- the etching conditions are the same as those in FIGS. 3OA and 30B.
- Example A shown in FIG. 33A ⁇ 200 mm
- the action of 90 that is, the effect of reducing the electric field strength can be significantly reduced or the omission can be suppressed.o Therefore, by changing the aperture ⁇ of the open P section 100a of the shield plate 100, X. Therefore (by exchanging the parts of the shield plate 100), the electric field intensity distribution characteristics between the electrodes 12 and 38 can be adjusted.
- h 1 Omm is set, and the gap Gf between the electrodes in the outer electrode extension 38 f is set to G.
- f 3
- the overhanging step of the outer electrode overhang 38 f is inclined to about 60. This inclination angle is ⁇ ',,,
- FIG. 35B shows a comparative example B in which the overhanging portion 3
- the 38 f overhanging step is inclined to about 60.
- FIG. 39B as Comparative Example B, the dielectric film 90 having the same film thickness profile as that of Example A was not protruded from the upper electrode 38 to the upper electrode 38.
- FIGS. 42A to 42D are partial cross-sectional views showing an upper electrode structure according to still another embodiment of the present invention.
- a dielectric film 90 provided on the main surface of the upper electrode 38 has a hollow dielectric 104 having a cavity 104 inside, for example, a hollow dielectric. It is composed of ceramics. Also in this embodiment, a profile in which the thickness of the hollow dielectric 90 at the center in the radial direction is larger than the thickness at the edge portion is preferable.
- a desired amount of the fluid dielectric substance NZ is placed in the cavity 104 of the hollow dielectric 90.
- the dielectric fluid NZ in the cavity 104 forms a part of the dielectric 90 according to its occupied volume.
- Such a dielectric fluid NZ may be a powder or the like, but generally an organic solvent (eg, Galden) is preferred.
- FIG. 44 is a diagram showing radial electric field intensity distribution characteristics between electrodes obtained by the embodiment of FIG.
- the cavity 1 of the hollow dielectric 90 is
- FIGS. 45A to 45D are partial cross-sectional views showing an upper electrode structure according to a modification of the embodiment of FIGS. 42A to 42D.
- the space or cavity 104 assigned to the dielectric fluid NZ in the hollow dielectric 90 is limited or localized to a specific region.
- the space of the cavity 104 is localized in the central region of the dielectric 90.
- the thickness of the ceramic plate 91 is changed in the radial direction (the taper is gradually reduced from the center toward the edge) to form the cavity 104.
- the space can be relatively localized in the peripheral region of the dielectric 90.
- the space of the cavity 104 can be formed in a desired region or shape. Stipulates that the inducible fluid N
- the cavity 104 in the hollow dielectric 90 is divided into a plurality of chambers, and the inflow and outflow and the filling amount of the dielectric fluid NZ are independently controlled for each chamber.
- the cavity 104 is formed into a central chamber 104 A by an annular partition plate 91 a integrally formed with the ceramics ⁇ 91.
- Peripheral room 1 0 4 B and can be divided into two.
- the electrode structure according to the third embodiment or a subsequent embodiment is applied to the susceptor 12 as shown in FIG. 19, for example, and the electrode according to the first embodiment is applied to the upper electrode 38.
- An application using the structure (FIGS. 2 and 3) or the electrode structure according to the second embodiment (FIGS. 15 and 16) is possible.
- the electrode structure according to the third embodiment or a later embodiment is applied to the upper electrode 38 as shown in FIG. 20, and the susceptor 12 has the electrode structure according to the first embodiment (see FIG. 20). 2 and 3) or an application to which the electrode structure (FIGS. 15 and 16) according to the second embodiment is applied is also possible.
- the plasma density can be made uniform by the above configuration and operation. Can be achieved.
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Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04707620.3A EP1594161B1 (en) | 2003-02-03 | 2004-02-03 | Plasma processing apparatus, electrode plate for plasma processing apparatus, and electrode plate manufacturing method |
US11/195,803 US7585386B2 (en) | 2003-02-03 | 2005-08-03 | Plasma processing apparatus, electrode plate for plasma processing apparatus, and electrode plate manufacturing method |
US12/505,940 US7922862B2 (en) | 2003-02-03 | 2009-07-20 | Plasma processing apparatus, electrode plate for plasma processing apparatus, and electrode plate manufacturing method |
US13/049,462 US20110162802A1 (en) | 2003-02-03 | 2011-03-16 | Plasma processing apparatus, electrode plate for plasma processing apparatus, and electrode plate manufacturing method |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003-025899 | 2003-02-03 | ||
JP2003025899 | 2003-02-03 | ||
JP2003-132810 | 2003-05-12 | ||
JP2003132810 | 2003-05-12 | ||
JP2004025007A JP4472372B2 (ja) | 2003-02-03 | 2004-02-02 | プラズマ処理装置及びプラズマ処理装置用の電極板 |
JP2004-025007 | 2004-02-02 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US11/195,803 Continuation US7585386B2 (en) | 2003-02-03 | 2005-08-03 | Plasma processing apparatus, electrode plate for plasma processing apparatus, and electrode plate manufacturing method |
Publications (1)
Publication Number | Publication Date |
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WO2004070808A1 true WO2004070808A1 (ja) | 2004-08-19 |
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ID=32854099
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/JP2004/001042 WO2004070808A1 (ja) | 2003-02-03 | 2004-02-03 | プラズマ処理装置及びプラズマ処理装置用の電極板及び電極板製造方法 |
Country Status (6)
Country | Link |
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US (3) | US7585386B2 (ja) |
EP (1) | EP1594161B1 (ja) |
JP (1) | JP4472372B2 (ja) |
KR (1) | KR100839677B1 (ja) |
TW (1) | TW200423250A (ja) |
WO (1) | WO2004070808A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101636813B (zh) * | 2007-03-12 | 2013-02-27 | 艾克斯特朗股份公司 | 具有改善的处理能力的等离子体系统 |
US8888951B2 (en) | 2009-03-06 | 2014-11-18 | Tokyo Electron Limited | Plasma processing apparatus and electrode for same |
US9202675B2 (en) | 2009-03-06 | 2015-12-01 | Tokyo Electron Limited | Plasma processing apparatus and electrode for same |
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Publication number | Priority date | Publication date | Assignee | Title |
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EP1835789B1 (en) * | 2004-12-27 | 2013-05-29 | NGK Insulators, Ltd. | Plasma generating electrode and plasma reactor |
JP4672436B2 (ja) * | 2005-05-20 | 2011-04-20 | 株式会社アルバック | プラズマ処理装置 |
US7525787B2 (en) * | 2005-09-30 | 2009-04-28 | Lam Research Corporation | Electrostatic chuck assembly with dielectric material and/or cavity having varying thickness, profile and/or shape, method of use and apparatus incorporating same |
JP4988327B2 (ja) * | 2006-02-23 | 2012-08-01 | ルネサスエレクトロニクス株式会社 | イオン注入装置 |
JP4707588B2 (ja) * | 2006-03-16 | 2011-06-22 | 東京エレクトロン株式会社 | プラズマ処理装置及びそれに用いられる電極 |
US8008596B2 (en) | 2006-03-16 | 2011-08-30 | Tokyo Electron Limited | Plasma processing apparatus and electrode used therein |
US8157953B2 (en) | 2006-03-29 | 2012-04-17 | Tokyo Electron Limited | Plasma processing apparatus |
JP4753306B2 (ja) * | 2006-03-29 | 2011-08-24 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP5125024B2 (ja) * | 2006-08-10 | 2013-01-23 | 東京エレクトロン株式会社 | プラズマ処理装置用の載置台及びプラズマ処理装置 |
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Also Published As
Publication number | Publication date |
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JP4472372B2 (ja) | 2010-06-02 |
US7585386B2 (en) | 2009-09-08 |
TW200423250A (en) | 2004-11-01 |
US20050276928A1 (en) | 2005-12-15 |
KR100839677B1 (ko) | 2008-06-19 |
US20090285998A1 (en) | 2009-11-19 |
US7922862B2 (en) | 2011-04-12 |
JP2004363552A (ja) | 2004-12-24 |
US20110162802A1 (en) | 2011-07-07 |
EP1594161A1 (en) | 2005-11-09 |
EP1594161B1 (en) | 2013-05-01 |
TWI334173B (ja) | 2010-12-01 |
EP1594161A4 (en) | 2008-10-22 |
KR20050094475A (ko) | 2005-09-27 |
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