JPS644481A - Parallel-plate discharge electrode - Google Patents

Parallel-plate discharge electrode

Info

Publication number
JPS644481A
JPS644481A JP15553087A JP15553087A JPS644481A JP S644481 A JPS644481 A JP S644481A JP 15553087 A JP15553087 A JP 15553087A JP 15553087 A JP15553087 A JP 15553087A JP S644481 A JPS644481 A JP S644481A
Authority
JP
Japan
Prior art keywords
electrode
current density
parallel
discharge
plate discharge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15553087A
Other languages
Japanese (ja)
Other versions
JPH0338345B2 (en
Inventor
Minoru Sugawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP15553087A priority Critical patent/JPS644481A/en
Publication of JPS644481A publication Critical patent/JPS644481A/en
Publication of JPH0338345B2 publication Critical patent/JPH0338345B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To optionally set a current density on the surface of at least one of the little parallel-plate discharge electrode or a space apart from the surface by providing a specified recess on the surface. CONSTITUTION:In the circular electrode of the parallel-plate discharge electrode for a plasma etching device, many holes having about 7mm diameter and about 15mm depth are bored through the electrode, and the number of the holes is progressively increased from the inside toward the outer periphery of the disk. A hollow cathode discharge is generated in the hole, and the discharge current density is increased. Accordingly, the discharge current density on the electrode surface is progressively lowered from the outer periphery toward the center part. In addition, the current density distribution in the space apart from the electrode is controlled by the current density distribution set on the electrode surface. As a result, an etching can be contrived with excellent uniformity in the plane.
JP15553087A 1987-06-24 1987-06-24 Parallel-plate discharge electrode Granted JPS644481A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15553087A JPS644481A (en) 1987-06-24 1987-06-24 Parallel-plate discharge electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15553087A JPS644481A (en) 1987-06-24 1987-06-24 Parallel-plate discharge electrode

Publications (2)

Publication Number Publication Date
JPS644481A true JPS644481A (en) 1989-01-09
JPH0338345B2 JPH0338345B2 (en) 1991-06-10

Family

ID=15608084

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15553087A Granted JPS644481A (en) 1987-06-24 1987-06-24 Parallel-plate discharge electrode

Country Status (1)

Country Link
JP (1) JPS644481A (en)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0266941A (en) * 1988-08-31 1990-03-07 Nec Corp Etching apparatus
WO1994005035A1 (en) * 1992-08-13 1994-03-03 Lam Research Corporation Hollow-anode glow discharge apparatus
EP0730532A1 (en) * 1993-11-17 1996-09-11 Lam Research Corporation Topology induced plasma enhancement for etched uniformity improvement
WO2000034979A1 (en) * 1998-12-07 2000-06-15 E.I. Du Pont De Nemours And Company Hollow cathode array for plasma generation
JP2002038263A (en) * 2000-07-25 2002-02-06 Ulvac Japan Ltd Sputtering device
US6528947B1 (en) 1999-12-06 2003-03-04 E. I. Du Pont De Nemours And Company Hollow cathode array for plasma generation
WO2004070808A1 (en) * 2003-02-03 2004-08-19 Octec Inc. Plasma treating device, and plasma treating device electrode plate, and electrode plate producing method
WO2006017136A2 (en) * 2004-07-12 2006-02-16 Applied Materials, Inc. Plasma uniformity control by gas diffuser curvature
US7785672B2 (en) 2004-04-20 2010-08-31 Applied Materials, Inc. Method of controlling the film properties of PECVD-deposited thin films
EP2239759A2 (en) * 2009-04-06 2010-10-13 Korea Advanced Institute of Science and Technology Substrate treatment apparatus, substrate treatment method, preliminary electrode structure, measuring electrode structure, and process electrode structure
JP2011518959A (en) * 2008-04-28 2011-06-30 アプライド マテリアルズ インコーポレイテッド Non-planar faceplate for plasma processing chamber
DE102010030608A1 (en) * 2010-06-28 2011-12-29 Von Ardenne Anlagentechnik Gmbh Device useful for plasma-assisted substrate treatment, comprises a hollow-cathode electrode, a transport device for a substrate in a relative motion to each other, a gas inlet system and a gas removal system
JP2012038682A (en) * 2010-08-11 2012-02-23 Tokyo Electron Ltd Plasma processing apparatus and plasma control method
JP2013520836A (en) * 2010-02-26 2013-06-06 ラム リサーチ コーポレーション System, method, and apparatus for plasma etching with independent control of ion generation and process gas dissociation
US9967965B2 (en) 2010-08-06 2018-05-08 Lam Research Corporation Distributed, concentric multi-zone plasma source systems, methods and apparatus
US10262837B2 (en) 2004-05-12 2019-04-16 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US10283325B2 (en) 2012-10-10 2019-05-07 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus
JP2020084295A (en) * 2018-11-30 2020-06-04 株式会社アルバック Sputtering method and sputtering apparatus

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6273719A (en) * 1985-09-27 1987-04-04 Hitachi Ltd Dry etching apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6273719A (en) * 1985-09-27 1987-04-04 Hitachi Ltd Dry etching apparatus

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0266941A (en) * 1988-08-31 1990-03-07 Nec Corp Etching apparatus
WO1994005035A1 (en) * 1992-08-13 1994-03-03 Lam Research Corporation Hollow-anode glow discharge apparatus
EP0730532A1 (en) * 1993-11-17 1996-09-11 Lam Research Corporation Topology induced plasma enhancement for etched uniformity improvement
EP0730532A4 (en) * 1993-11-17 1997-01-02 Lam Res Corp Topology induced plasma enhancement for etched uniformity improvement
WO2000034979A1 (en) * 1998-12-07 2000-06-15 E.I. Du Pont De Nemours And Company Hollow cathode array for plasma generation
US6528947B1 (en) 1999-12-06 2003-03-04 E. I. Du Pont De Nemours And Company Hollow cathode array for plasma generation
JP2002038263A (en) * 2000-07-25 2002-02-06 Ulvac Japan Ltd Sputtering device
US7922862B2 (en) 2003-02-03 2011-04-12 Octec Inc. Plasma processing apparatus, electrode plate for plasma processing apparatus, and electrode plate manufacturing method
WO2004070808A1 (en) * 2003-02-03 2004-08-19 Octec Inc. Plasma treating device, and plasma treating device electrode plate, and electrode plate producing method
US7785672B2 (en) 2004-04-20 2010-08-31 Applied Materials, Inc. Method of controlling the film properties of PECVD-deposited thin films
US10312058B2 (en) 2004-05-12 2019-06-04 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US10262837B2 (en) 2004-05-12 2019-04-16 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
WO2006017136A2 (en) * 2004-07-12 2006-02-16 Applied Materials, Inc. Plasma uniformity control by gas diffuser curvature
WO2006017136A3 (en) * 2004-07-12 2006-09-21 Applied Materials Inc Plasma uniformity control by gas diffuser curvature
JP2011518959A (en) * 2008-04-28 2011-06-30 アプライド マテリアルズ インコーポレイテッド Non-planar faceplate for plasma processing chamber
EP2239759A2 (en) * 2009-04-06 2010-10-13 Korea Advanced Institute of Science and Technology Substrate treatment apparatus, substrate treatment method, preliminary electrode structure, measuring electrode structure, and process electrode structure
EP2239759A3 (en) * 2009-04-06 2011-12-28 Korea Advanced Institute of Science and Technology Substrate treatment apparatus, substrate treatment method, preliminary electrode structure, measuring electrode structure, and process electrode structure
US9735020B2 (en) 2010-02-26 2017-08-15 Lam Research Corporation System, method and apparatus for plasma etch having independent control of ion generation and dissociation of process gas
JP2013520836A (en) * 2010-02-26 2013-06-06 ラム リサーチ コーポレーション System, method, and apparatus for plasma etching with independent control of ion generation and process gas dissociation
DE102010030608B4 (en) * 2010-06-28 2012-04-05 Von Ardenne Anlagentechnik Gmbh Device for plasma-assisted processing of substrates
DE102010030608A1 (en) * 2010-06-28 2011-12-29 Von Ardenne Anlagentechnik Gmbh Device useful for plasma-assisted substrate treatment, comprises a hollow-cathode electrode, a transport device for a substrate in a relative motion to each other, a gas inlet system and a gas removal system
US9967965B2 (en) 2010-08-06 2018-05-08 Lam Research Corporation Distributed, concentric multi-zone plasma source systems, methods and apparatus
US8829387B2 (en) 2010-08-11 2014-09-09 Tokyo Electron Limited Plasma processing apparatus having hollow electrode on periphery and plasma control method
JP2012038682A (en) * 2010-08-11 2012-02-23 Tokyo Electron Ltd Plasma processing apparatus and plasma control method
US10283325B2 (en) 2012-10-10 2019-05-07 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus
JP2020084295A (en) * 2018-11-30 2020-06-04 株式会社アルバック Sputtering method and sputtering apparatus

Also Published As

Publication number Publication date
JPH0338345B2 (en) 1991-06-10

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