JPS644481A - Parallel-plate discharge electrode - Google Patents
Parallel-plate discharge electrodeInfo
- Publication number
- JPS644481A JPS644481A JP15553087A JP15553087A JPS644481A JP S644481 A JPS644481 A JP S644481A JP 15553087 A JP15553087 A JP 15553087A JP 15553087 A JP15553087 A JP 15553087A JP S644481 A JPS644481 A JP S644481A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- current density
- parallel
- discharge
- plate discharge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
PURPOSE:To optionally set a current density on the surface of at least one of the little parallel-plate discharge electrode or a space apart from the surface by providing a specified recess on the surface. CONSTITUTION:In the circular electrode of the parallel-plate discharge electrode for a plasma etching device, many holes having about 7mm diameter and about 15mm depth are bored through the electrode, and the number of the holes is progressively increased from the inside toward the outer periphery of the disk. A hollow cathode discharge is generated in the hole, and the discharge current density is increased. Accordingly, the discharge current density on the electrode surface is progressively lowered from the outer periphery toward the center part. In addition, the current density distribution in the space apart from the electrode is controlled by the current density distribution set on the electrode surface. As a result, an etching can be contrived with excellent uniformity in the plane.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15553087A JPS644481A (en) | 1987-06-24 | 1987-06-24 | Parallel-plate discharge electrode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15553087A JPS644481A (en) | 1987-06-24 | 1987-06-24 | Parallel-plate discharge electrode |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS644481A true JPS644481A (en) | 1989-01-09 |
JPH0338345B2 JPH0338345B2 (en) | 1991-06-10 |
Family
ID=15608084
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15553087A Granted JPS644481A (en) | 1987-06-24 | 1987-06-24 | Parallel-plate discharge electrode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS644481A (en) |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0266941A (en) * | 1988-08-31 | 1990-03-07 | Nec Corp | Etching apparatus |
WO1994005035A1 (en) * | 1992-08-13 | 1994-03-03 | Lam Research Corporation | Hollow-anode glow discharge apparatus |
EP0730532A1 (en) * | 1993-11-17 | 1996-09-11 | Lam Research Corporation | Topology induced plasma enhancement for etched uniformity improvement |
WO2000034979A1 (en) * | 1998-12-07 | 2000-06-15 | E.I. Du Pont De Nemours And Company | Hollow cathode array for plasma generation |
JP2002038263A (en) * | 2000-07-25 | 2002-02-06 | Ulvac Japan Ltd | Sputtering device |
US6528947B1 (en) | 1999-12-06 | 2003-03-04 | E. I. Du Pont De Nemours And Company | Hollow cathode array for plasma generation |
WO2004070808A1 (en) * | 2003-02-03 | 2004-08-19 | Octec Inc. | Plasma treating device, and plasma treating device electrode plate, and electrode plate producing method |
WO2006017136A2 (en) * | 2004-07-12 | 2006-02-16 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser curvature |
US7785672B2 (en) | 2004-04-20 | 2010-08-31 | Applied Materials, Inc. | Method of controlling the film properties of PECVD-deposited thin films |
EP2239759A2 (en) * | 2009-04-06 | 2010-10-13 | Korea Advanced Institute of Science and Technology | Substrate treatment apparatus, substrate treatment method, preliminary electrode structure, measuring electrode structure, and process electrode structure |
JP2011518959A (en) * | 2008-04-28 | 2011-06-30 | アプライド マテリアルズ インコーポレイテッド | Non-planar faceplate for plasma processing chamber |
DE102010030608A1 (en) * | 2010-06-28 | 2011-12-29 | Von Ardenne Anlagentechnik Gmbh | Device useful for plasma-assisted substrate treatment, comprises a hollow-cathode electrode, a transport device for a substrate in a relative motion to each other, a gas inlet system and a gas removal system |
JP2012038682A (en) * | 2010-08-11 | 2012-02-23 | Tokyo Electron Ltd | Plasma processing apparatus and plasma control method |
JP2013520836A (en) * | 2010-02-26 | 2013-06-06 | ラム リサーチ コーポレーション | System, method, and apparatus for plasma etching with independent control of ion generation and process gas dissociation |
US9967965B2 (en) | 2010-08-06 | 2018-05-08 | Lam Research Corporation | Distributed, concentric multi-zone plasma source systems, methods and apparatus |
US10262837B2 (en) | 2004-05-12 | 2019-04-16 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser hole design |
US10283325B2 (en) | 2012-10-10 | 2019-05-07 | Lam Research Corporation | Distributed multi-zone plasma source systems, methods and apparatus |
JP2020084295A (en) * | 2018-11-30 | 2020-06-04 | 株式会社アルバック | Sputtering method and sputtering apparatus |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6273719A (en) * | 1985-09-27 | 1987-04-04 | Hitachi Ltd | Dry etching apparatus |
-
1987
- 1987-06-24 JP JP15553087A patent/JPS644481A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6273719A (en) * | 1985-09-27 | 1987-04-04 | Hitachi Ltd | Dry etching apparatus |
Cited By (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0266941A (en) * | 1988-08-31 | 1990-03-07 | Nec Corp | Etching apparatus |
WO1994005035A1 (en) * | 1992-08-13 | 1994-03-03 | Lam Research Corporation | Hollow-anode glow discharge apparatus |
EP0730532A1 (en) * | 1993-11-17 | 1996-09-11 | Lam Research Corporation | Topology induced plasma enhancement for etched uniformity improvement |
EP0730532A4 (en) * | 1993-11-17 | 1997-01-02 | Lam Res Corp | Topology induced plasma enhancement for etched uniformity improvement |
WO2000034979A1 (en) * | 1998-12-07 | 2000-06-15 | E.I. Du Pont De Nemours And Company | Hollow cathode array for plasma generation |
US6528947B1 (en) | 1999-12-06 | 2003-03-04 | E. I. Du Pont De Nemours And Company | Hollow cathode array for plasma generation |
JP2002038263A (en) * | 2000-07-25 | 2002-02-06 | Ulvac Japan Ltd | Sputtering device |
US7922862B2 (en) | 2003-02-03 | 2011-04-12 | Octec Inc. | Plasma processing apparatus, electrode plate for plasma processing apparatus, and electrode plate manufacturing method |
WO2004070808A1 (en) * | 2003-02-03 | 2004-08-19 | Octec Inc. | Plasma treating device, and plasma treating device electrode plate, and electrode plate producing method |
US7785672B2 (en) | 2004-04-20 | 2010-08-31 | Applied Materials, Inc. | Method of controlling the film properties of PECVD-deposited thin films |
US10312058B2 (en) | 2004-05-12 | 2019-06-04 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser hole design |
US10262837B2 (en) | 2004-05-12 | 2019-04-16 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser hole design |
WO2006017136A2 (en) * | 2004-07-12 | 2006-02-16 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser curvature |
WO2006017136A3 (en) * | 2004-07-12 | 2006-09-21 | Applied Materials Inc | Plasma uniformity control by gas diffuser curvature |
JP2011518959A (en) * | 2008-04-28 | 2011-06-30 | アプライド マテリアルズ インコーポレイテッド | Non-planar faceplate for plasma processing chamber |
EP2239759A2 (en) * | 2009-04-06 | 2010-10-13 | Korea Advanced Institute of Science and Technology | Substrate treatment apparatus, substrate treatment method, preliminary electrode structure, measuring electrode structure, and process electrode structure |
EP2239759A3 (en) * | 2009-04-06 | 2011-12-28 | Korea Advanced Institute of Science and Technology | Substrate treatment apparatus, substrate treatment method, preliminary electrode structure, measuring electrode structure, and process electrode structure |
US9735020B2 (en) | 2010-02-26 | 2017-08-15 | Lam Research Corporation | System, method and apparatus for plasma etch having independent control of ion generation and dissociation of process gas |
JP2013520836A (en) * | 2010-02-26 | 2013-06-06 | ラム リサーチ コーポレーション | System, method, and apparatus for plasma etching with independent control of ion generation and process gas dissociation |
DE102010030608B4 (en) * | 2010-06-28 | 2012-04-05 | Von Ardenne Anlagentechnik Gmbh | Device for plasma-assisted processing of substrates |
DE102010030608A1 (en) * | 2010-06-28 | 2011-12-29 | Von Ardenne Anlagentechnik Gmbh | Device useful for plasma-assisted substrate treatment, comprises a hollow-cathode electrode, a transport device for a substrate in a relative motion to each other, a gas inlet system and a gas removal system |
US9967965B2 (en) | 2010-08-06 | 2018-05-08 | Lam Research Corporation | Distributed, concentric multi-zone plasma source systems, methods and apparatus |
US8829387B2 (en) | 2010-08-11 | 2014-09-09 | Tokyo Electron Limited | Plasma processing apparatus having hollow electrode on periphery and plasma control method |
JP2012038682A (en) * | 2010-08-11 | 2012-02-23 | Tokyo Electron Ltd | Plasma processing apparatus and plasma control method |
US10283325B2 (en) | 2012-10-10 | 2019-05-07 | Lam Research Corporation | Distributed multi-zone plasma source systems, methods and apparatus |
JP2020084295A (en) * | 2018-11-30 | 2020-06-04 | 株式会社アルバック | Sputtering method and sputtering apparatus |
Also Published As
Publication number | Publication date |
---|---|
JPH0338345B2 (en) | 1991-06-10 |
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