US20240290625A1 - Plasma processing apparatus - Google Patents
Plasma processing apparatus Download PDFInfo
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- US20240290625A1 US20240290625A1 US18/659,116 US202418659116A US2024290625A1 US 20240290625 A1 US20240290625 A1 US 20240290625A1 US 202418659116 A US202418659116 A US 202418659116A US 2024290625 A1 US2024290625 A1 US 2024290625A1
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- 239000000758 substrate Substances 0.000 claims abstract description 105
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims abstract description 35
- 239000000463 material Substances 0.000 claims abstract description 33
- 238000009826 distribution Methods 0.000 claims abstract description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 20
- 239000010703 silicon Substances 0.000 claims abstract description 20
- 150000002500 ions Chemical class 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052681 coesite Inorganic materials 0.000 claims description 6
- 229910052906 cristobalite Inorganic materials 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 229910052682 stishovite Inorganic materials 0.000 claims description 6
- 229910052905 tridymite Inorganic materials 0.000 claims description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 78
- 238000005530 etching Methods 0.000 abstract description 17
- 239000007789 gas Substances 0.000 description 137
- 239000004020 conductor Substances 0.000 description 59
- 230000005684 electric field Effects 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 6
- 239000002826 coolant Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- -1 for example Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Definitions
- Patent Document 1 discloses a method for selectively etching a first region of silicon oxide with respect to a second region of silicon nitride.
- a deposit containing fluorocarbon is formed on a substrate.
- plasma from a fluorocarbon gas is formed in a chamber of a plasma processing apparatus.
- ions of a rare gas are supplied onto the substrate.
- plasma of the rare gas is formed in the chamber.
- Patent Document 1 Japanese Patent Laid-open Publication No. 2016-136606
- an etching method performed in a plasma processing apparatus is provided.
- the etching method is performed in a state where a substrate is placed in a chamber of the plasma processing apparatus.
- the etching method includes forming plasma from a processing gas containing a fluorocarbon gas within the chamber to form a deposit containing fluorocarbon on the substrate.
- the substrate has a first region formed of a silicon containing material and a second region formed of a metal containing material.
- the etching method further includes forming plasma from a rare gas within the chamber to etch the first region by supplying rare gas ions to the substrate to react the fluorocarbon contained in the deposit on the substrate with the silicon containing material of the first region.
- a magnetic field distribution in which a horizontal component on an edge side of the substrate is higher than a horizontal component on a center of the substrate is formed by an electromagnet.
- FIG. 1 is a flowchart showing an etching method according to an exemplary embodiment.
- FIG. 2 is a partial cross-sectional view of an example of a substrate.
- FIG. 3 is a diagram schematically illustrating a plasma processing apparatus according to the exemplary embodiment.
- FIG. 4 is a plan view illustrating an example of a configuration within a ground conductor of the plasma processing apparatus illustrated in FIG. 3 .
- FIG. 5 A is a partial cross-sectional view of an example of a substrate to which a process ST 1 of a method MT illustrated in FIG. 1 is applied
- FIG. 5 B is a partial cross-sectional view of an example of the substrate to which a process ST 2 of the method MT is applied
- FIG. 5 C is a partial cross-sectional view of an example of the substrate after the method MT is ended.
- an etching method performed in a plasma processing apparatus is provided.
- the etching method is performed in a state where a substrate is placed in a chamber of the plasma processing apparatus.
- the etching method includes forming plasma from a processing gas containing a fluorocarbon gas within the chamber to form a deposit containing fluorocarbon on the substrate.
- the substrate has a first region formed of a silicon containing material and a second region formed of a metal containing material.
- the etching method further includes forming plasma from a rare gas within the chamber to etch the first region by supplying rare gas ions to the substrate to react the fluorocarbon contained in the deposit on the substrate with the silicon containing material of the first region.
- a magnetic field distribution in which a horizontal component on an edge side of the substrate is higher than a horizontal component on a center of the substrate is formed by an electromagnet.
- the density of plasma increases on the center of the substrate and decreases on the edge side of the substrate.
- the magnetic field distribution in which the horizontal component on the edge side of the substrate is higher than the horizontal component on the center of the substrate is formed while the rare gas ions are generated. Therefore, the density of plasma on the edge side of the substrate increases.
- the plasma has the uniform density distribution in the diametric direction. Since the rare gas ions from the plasma having the above-described uniform density distribution are incident to the substrate, the reaction between the fluorocarbon contained in the deposit and the silicon containing material of the first region is promoted. The second region is protected by the deposit. Therefore, the in-plane uniformity in the processing of selectively etching the first region of the substrate with respect to the second region of the substrate can be improved.
- the silicon containing material may be SiO 2 , SiOC or SiOCH.
- the metal containing material may be any one of metal materials of titanium, tungsten, zirconium, aluminum, tantalum, cobalt or ruthenium, or an oxide, a nitride or a carbide of the corresponding metal material.
- the fluorocarbon gas may contain a C 4 F 8 gas and/or a C 4 F 6 gas.
- the forming of the plasma from the processing gas and the forming of the plasma from the rare gas may be alternately repeated.
- a plasma processing apparatus in another exemplary embodiment, includes a chamber; a substrate supporting table; a gas supply; a high frequency power supply; an electromagnet; a drive power supply and a controller.
- the substrate supporting table has a lower electrode and is provided within the chamber.
- the gas supply is configured to supply a processing gas containing a fluorocarbon gas and a rare gas into the chamber.
- the high frequency power supply I configured to generate a high frequency power to excite a gas within the chamber.
- the electromagnet is configured to form a magnetic field within an interior space of the chamber.
- the drive power supply is configured to supply a current to the electromagnet.
- the controller is configured to control the gas supply, the high frequency power supply and the drive power supply.
- the controller performs a first control and a second control.
- the controller controls the gas supply to supply the processing gas into the chamber and controlling the high frequency power supply to supply the high frequency power to form a deposit containing fluorocarbon from plasma formed from the processing gas on a substrate placed on the substrate supporting.
- the controller controls the gas supply to supply the rare gas into the chamber and controls the high frequency power supply to supply the high frequency power to supply rare gas ions to the substrate on which the deposit is formed.
- the controller controls the drive power supply to form a magnetic field distribution in which a horizontal component on an edge side of the substrate is higher than a horizontal component on a center of the substrate by the electromagnet.
- the fluorocarbon gas may contain a C 4 F 8 gas and/or a C 4 F 6 gas.
- the controller may be configured to alternately repeat the first control and the second control.
- FIG. 1 is a flowchart showing an etching method according to an exemplary embodiment.
- the etching method (hereinafter, referred to as “method MT”) according to the exemplary embodiment is performed to selectively etch a first region of a substrate with respect to a second region thereof.
- FIG. 2 is a partial cross-sectional view of an example of a substrate.
- An example of a substrate W illustrated in FIG. 2 can be processed by the method MT.
- the substrate W may have a disc shape like a wafer.
- the substrate W has a first region R 1 and a second region R 2 .
- the substrate W may further have an underlying region UR.
- the first region R 1 and the second region R 2 are provided on the underlying region UR.
- the first region R 1 is provided on the underlying region UR and the second region R 2 is provided on the first region R 1 .
- the second region R 2 is patterned like a mask. That is, the second region R 2 provides an opening.
- the first region R 1 may be formed to fill a recess provided by the second region R 2 .
- the first region R 1 is a region to be selectively etched.
- the first region R 1 is formed of a silicon containing material.
- the silicon containing material of the first region R 1 is, for example, SiO 2 .
- the silicon containing material of the first region R 1 may be a low dielectric constant material.
- the low dielectric constant material is, for example, SiOC or SiOCH.
- the second region R 2 is formed of a metal containing material.
- the metal containing material is any one of metal materials, for example, titanium, tungsten, zirconium, aluminum, tantalum, cobalt or ruthenium, or an oxide, a nitride or a carbide of the metal material.
- FIG. 3 is a diagram schematically illustrating a plasma processing apparatus according to the exemplary embodiment.
- a plasma processing apparatus 1 illustrated in FIG. 3 includes a chamber 10 .
- the chamber 10 is a container in which an interior space 10 s is provided.
- the chamber 10 has an approximately cylindrical shape.
- a central axis AX illustrated in FIG. 3 is the central axis of the chamber 10 and the interior space 10 s.
- the chamber 10 includes a chamber main body 12 .
- the chamber main body 12 has an approximately cylindrical shape.
- the interior space 10 s of the chamber 10 is provided within the chamber main body 12 .
- the chamber main body 12 includes a side wall 12 a and a bottom portion 12 b .
- the side wall 12 a constitutes a side wall of the chamber 10 .
- the bottom portion 12 b constitutes a bottom portion of the chamber 10 .
- the chamber main body 12 is formed of a metal such as aluminum.
- a film having plasma resistance is formed on an inner wall surface of the chamber main body 12 . This film may be a ceramic film such as an alumite film or an yttrium oxide film.
- the chamber main body 12 is grounded.
- a passage 12 p is formed at the side wall 12 a .
- the substrate W is transferred between the interior space 10 s and the outside of the chamber 10 through the passage 12 p .
- the passage 12 p can be opened or closed by a gate valve 12 g .
- the gate valve 12 g is provided along the side wall 12 a.
- a substrate supporting table i.e., a supporting table 14
- the supporting table 14 is supported by a supporting body 15 .
- the supporting body 15 has a cylindrical shape.
- the supporting body 15 is extended upwards from the bottom portion 12 b of the chamber main body 12 .
- the supporting body 15 has the insulating property.
- the supporting body 15 is formed of, for example, ceramic.
- the supporting table 14 is configured to support the substrate W.
- the supporting table 14 commonly shares the central axis AX with the chamber 10 .
- a placing region 14 r is provided on the supporting table 14 .
- the center of the placing region 14 r is located on the central axis AX.
- the substrate W is placed on the placing region 14 r such that the center of the substrate W is located on the central axis AX.
- the supporting table 14 includes an electrode plate 16 , a lower electrode 18 and an electrostatic chuck 20 .
- the electrode plate 16 has an approximately disc shape.
- the electrode plate 16 has conductivity.
- the electrode plate 16 is formed of a metal such as aluminum.
- the lower electrode 18 has a disc shape.
- the lower electrode 18 has conductivity.
- the lower electrode 18 is formed of a metal such as aluminum.
- the lower electrode 18 is provided on the electrode plate 16 .
- the lower electrode 18 is electrically connected to the electrode plate 16 .
- a flow path 18 p is formed within the lower electrode 18 .
- the flow path 18 p is extended in, for example, a spiral shape within the lower electrode 18 .
- a heat exchange medium e.g., coolant
- the circulation unit 22 is provided outside the chamber 10 .
- the heat exchange medium supplied into the flow path 18 p is returned back to the circulation unit 22 .
- a temperature of the substrate W placed on the supporting table 14 is adjusted by heat exchange between the heat exchange medium and the lower electrode 18 .
- the electrostatic chuck 20 is provided on the lower electrode 18 .
- the electrostatic chuck 20 has an approximately disc shape.
- the electrostatic chuck 20 has a main body and an electrode.
- the main body of the electrostatic chuck 20 is formed of a dielectric material (for example, ceramic).
- the electrode of the electrostatic chuck 20 is a conductive film and provided within the main body of the electrostatic chuck 20 .
- the electrode of the electrostatic chuck 20 is connected to a DC power supply 24 via a switch.
- the electrostatic chuck 20 provides the above-described placing region 14 r .
- the plasma processing apparatus 1 may be equipped with a heat transfer gas supply line through which a heat transfer gas (for example, He gas) is supplied between the electrostatic chuck 20 and a rear surface of the substrate W.
- a heat transfer gas for example, He gas
- One or more heaters may be provided within the electrostatic chuck 20 .
- the one or more heaters When a power is supplied to one or more heaters from a heater controller, the one or more heaters generate heat, and, thus, the temperature of the electrostatic chuck 20 and the temperature of the substrate W can be controlled.
- a focus ring FR is provided on the supporting table 14 .
- the focus ring FR is placed to surround the edges of the electrostatic chuck 20 and the substrate W.
- the focus ring FR is an annular plate and formed of a silicon containing material such as silicon, quartz or the like.
- the focus ring FR is provided to improve the uniformity in a plasma processing.
- a cylindrical conductor 26 is provided around the supporting body 15 .
- the conductor 26 is grounded.
- a cylindrical insulator 28 is provided above the conductor 26 to surround the supporting table 14 .
- the insulator 28 is formed of ceramic such as quartz.
- An exhaust path is formed between the supporting table 14 and the side wall 12 a of the chamber main body 12 .
- a baffle plate 30 is provided in the exhaust path.
- the baffle plate 30 is an annular plate.
- a plurality of holes is formed in the baffle plate 30 to penetrate the baffle plate 30 in a thickness direction thereof.
- the baffle plate 30 is formed of a metal member, such as aluminum, coated with a film, such as yttrium oxide, having plasma resistance.
- an exhaust line 32 is connected to the bottom portion 12 b of the chamber main body 12 .
- the exhaust line 32 can communicate with the exhaust path.
- the exhaust line 32 is connected to an exhaust device 34 .
- the exhaust device 34 includes an automatic pressure control valve and a vacuum pump such as a turbo molecular pump. When the exhaust device 34 is operated, the pressure within the interior space 10 s is set to a predetermined level.
- An upper electrode 36 is provided above the supporting table 14 .
- a part of the interior space 10 s is interposed between the upper electrode 36 and the supporting table 14 .
- the upper electrode 36 is provided to close an upper opening of the chamber main body 12 .
- a member 37 is interposed between the upper electrode 36 and an upper end portion of the chamber main body 12 .
- the member 37 is formed of an insulating material.
- the member 37 may be formed of ceramic, for example, quartz.
- the member 37 and a part of a ground conductor to be described later may be interposed between the upper electrode 36 and the upper end portion of the chamber main body 12 .
- the upper electrode 36 constitutes a shower head.
- the upper electrode 36 includes a ceiling plate 38 and a supporting body 40 .
- the ceiling plate 38 is formed of, for example, silicon. Otherwise, the ceiling plate 38 is formed of an aluminum member coated with a ceramic film, such as yttrium oxide.
- a plurality of gas discharge holes 38 h is formed in the ceiling plate 38 to penetrate the ceiling plate 38 in a thickness direction thereof.
- the supporting body 40 is provided on the ceiling plate 38 .
- the supporting body 40 is configured to detachably support the ceiling plate 38 .
- the supporting body 40 is formed of a conductive material such as aluminum.
- a gas diffusion space 40 d is formed within the supporting body 40 .
- a plurality of holes 40 h is formed in the supporting body 40 .
- the plurality of holes 40 h is extended downwards from the gas diffusion space 40 d .
- the holes 40 h communicate with the gas discharge holes 38 h , respectively.
- the gas diffusion space 40 d is connected to a gas supply 41 .
- the gas supply 41 is configured to supply a gas into the chamber 10 , i.e., into the interior space 10 s .
- the gas supply 41 is configured to supply a plurality of gases used in the method MT.
- the plurality of gases used in the method MT includes a fluorocarbon gas and a rare gas.
- the fluorocarbon gas includes one or more of, for example, C 4 F 6 gas, C 4 F 8 gas and C 6 F 8 gas, but may be another fluorocarbon gas.
- the rare gas is, for example, Ar gas, but may be another rare gas.
- the plurality of gases used in the method MT may further include other gases.
- the plurality of gases used in the method MT may further include one or more of a nitrogen gas (N 2 gas) and an oxygen containing gas (for example, O 2 gas or CO gas).
- the gas supply 41 is equipped with a plurality of flow rate controllers and a plurality of valves.
- the gas supply 41 is configured to individually adjust the flow rates of one or more gases to be supplied.
- the gas supplied from the gas supply 41 is discharged into the interior space 10 s from the plurality of gas discharge holes 38 h through the gas diffusion space 40 d and the plurality of holes 40 h.
- a flow path 40 p is formed in the supporting body 40 .
- a chiller unit 42 is connected to the flow path 40 p .
- a coolant such as cooling water is circulated between the flow path 40 p and the chiller unit 42 .
- a temperature of the upper electrode 36 is adjusted by heat exchange between the upper electrode 36 and the coolant supplied from the chiller unit 42 to the flow path 40 p.
- the plasma processing apparatus 1 further includes a first high frequency power supply 43 and a second high frequency power supply 44 .
- the first high frequency power supply 43 and the second high frequency power supply 44 are provided outside the chamber 10 .
- the first high frequency power supply 43 is configured to mainly generate a first high frequency power for plasma formation.
- the first high frequency power may have a frequency of, for example, 100 MHz, but is not limited thereto.
- the first high frequency power supply 43 is electrically connected to the upper electrode 36 via a matching device 45 and a power feed conductor 48 .
- the matching device 45 includes a matching circuit configured to match an output impedance of the first high frequency power supply 43 with an impedance of a load side (the upper electrode 36 side). A lower end of the power feed conductor 48 is connected to the upper electrode 36 .
- the power feed conductor 48 is extended upwards from the upper electrode 36 .
- the power feed conductor 48 is a cylindrical or rod-shaped conductor, and a central axis of the power feed conductor 48 substantially coincides with the central axis AX.
- the first high frequency power supply 43 may be electrically connected to the lower electrode 18 , instead of the upper electrode 36 , via the matching device 45 .
- the second high frequency power supply 44 is configured to mainly generate a second high frequency power, i.e., high frequency bias power, for ion attraction to the substrate W.
- a frequency of the second high frequency power is lower than the frequency of the first high frequency power.
- the frequency of the second high frequency power may be greater than 13.56 MHz.
- the frequency of the second high frequency power may be equal to or greater than 40 MHz.
- the frequency of the second high frequency power may be equal to or greater than 60 MHz.
- the second high frequency power supply 44 is electrically connected to the lower electrode 18 via a matching device 46 .
- the matching device 46 includes a matching circuit configured to match an output impedance of the second high frequency power supply 44 with an impedance of a load side (the lower electrode 18 side).
- the plasma processing apparatus 1 further includes a ground conductor 50 .
- the ground conductor 50 has conductivity.
- the ground conductor 50 is formed of a metal such as aluminum.
- the ground conductor 50 is grounded.
- the ground conductor 50 is extended to cover the upper electrode 36 above the chamber main body 12 .
- the power feed conductor 48 is extended upwards through a space surrounded by the ground conductor 50 and is connected to the first high frequency power supply 43 via the matching device 45 outside the ground conductor 50 .
- an electric field intensity distribution having a high electric field intensity on the center of the substrate W and a low electric field intensity on the edge side of the substrate W may be formed. That is, a non-uniform electric field intensity distribution in which the electric field intensity decreases as the distance from the central axis AX increases in a radial direction (i.e., a diametric direction) may be formed within the interior space 10 s . Under the non-uniform electric field intensity distribution, the density of plasma is high near the central axis AX and low in a portion distant from the central axis AX. That is, a non-uniform plasma density distribution is formed in the radial direction with respect to the central axis AX.
- the plasma processing apparatus 1 further includes an electromagnet 60 in order to obtain a uniform plasma density distribution.
- the electromagnet 60 is placed above the upper electrode 36 .
- the electromagnet 60 is configured to form a magnetic field distribution, in which a horizontal component at a portion distanced from the central axis AX is higher than a horizontal component on the central axis AX, within the interior space 10 s . That is, the electromagnet 60 forms a magnetic field distribution having a horizontal component, whose magnitude increases as the distance from the central axis AX increases in the radial direction, within the interior space 10 s .
- the residence time of electrons increases.
- the density of plasma increases in the portion in which the magnetic field having the high horizontal component is formed.
- the plasma processing apparatus 1 it is possible to obtain a uniform plasma density distribution in the radial direction with respect to the central axis AX. Therefore, in the plasma processing apparatus 1 , the in-plane uniformity of the processing on the substrate W is improved.
- the electromagnet 60 includes a yoke 62 and a coil 64 .
- the yoke 62 is formed of a magnetic material.
- the yoke 62 includes a base portion 62 a and a plurality of cylindrical portions 62 b .
- the base portion 62 a has an approximately annular shape and approximately disc shape, and is extended in a direction orthogonal to the central axis AX.
- Each of the plurality of cylindrical portions 62 b has a cylindrical shape and is extended downwards from the base portion 62 a .
- the plurality of cylindrical portions 62 b is provided coaxially with respect to the central axis AX.
- the coil 64 is wound around the central axis AX.
- the coil 64 is provided between two adjacent cylindrical portions 62 b in the radial direction.
- the electromagnet 60 may include one or more coils 64 . If the electromagnet 60 includes a plurality of coils 64 , the plurality of coils 64 is provided coaxially with respect to the central axis AX.
- the coil 64 of the electromagnet 60 is connected to a drive power supply 66 via a wire 68 .
- a current is applied from the drive power supply 66 to the coil 64 , a magnetic field is formed by the electromagnet 60 .
- an angle of a vector of the magnetic field formed by the electromagnet 60 is 45°, the electron confinement effect (the effect of suppressing diffusion of electrons) in the radial direction (diametric direction) and the effect of suppressing annihilation of electrons (the effect of suppressing electrons from reaching the electrode) are well compatible with each other. Therefore, the density of plasma increases in the corresponding portion.
- the electromagnet 60 may be configured such that the distance between the portion in which the angle of the vector of the magnetic field is 45° and the central axis AX is 135 mm or more and 185 mm or less. Therefore, in the exemplary embodiment, the average of the inner diameter and the outer diameter of one coil 64 of the electromagnet 60 is set to be equal to or greater than the distance between the central axis AX and the edge of the substrate W. When the radius of the substrate W is 150 mm, the average of the inner diameter and the outer diameter of the coil 64 of the electromagnet 60 is set to 150 mm or more and 250 mm or less.
- the angle of the vector of the magnetic field is 0° when the magnetic field has only a downward component, and is 90° when the magnetic field has only a component (horizontal component) in the radial direction.
- the angle of the vector of the magnetic field is 45°, the magnetic field has both a horizontal component and a vertical component.
- the electromagnet 60 When the electromagnet 60 is placed in the space surrounded by the ground conductor covering the upper electrode, the first high frequency power is introduced into the electromagnet 60 and/or a wire that connects the electromagnet 60 and a power supply (drive power supply). As a result, the electric field intensity within the interior space 10 s varies locally. Thus, the electromagnet 60 is placed outside the ground conductor. However, when the electromagnet 60 is placed in a space above an upper end of the ground conductor, the distance in the vertical direction from the electromagnet 60 to the interior space 10 s increases. Therefore, if a high current is not applied to the coil 64 , a magnetic field having a sufficient magnitude cannot be efficiently formed within the interior space 10 s .
- the ground conductor 50 is provided with an exterior space ES in which the electromagnet 60 is placed.
- the exterior space ES is located closer to the interior space 10 s than the upper end of the ground conductor 50 . Further, the exterior space ES is separated upwards from the upper electrode 36 , and is shielded from the upper electrode 36 by the ground conductor 50 .
- the ground conductor 50 includes a first portion 51 , a second portion 52 and a third portion 53 .
- the first portion 51 has a cylindrical shape.
- a central axis of the first portion 51 approximately coincides with the central axis AX.
- the first portion 51 is extended upwards from the chamber main body 12 .
- the first portion 51 is extended upwards from an upper end of the side wall 12 a of the chamber main body 12 .
- a lower end portion of the first portion 51 is interposed between the member 37 and the upper end of the side wall 12 a.
- the second portion 52 is spaced apart upwards from the upper electrode 36 and extended from the first portion 51 toward the central axis AX.
- the second portion 52 has a plate shape that is extended in a direction intersecting or orthogonal to the central axis AX.
- the first portion 51 and the second portion 52 provide a first space IS 1 above the upper electrode 36 .
- the first space IS 1 is a part of a space within the ground conductor 50 (i.e., at the upper electrode 36 side).
- the first space IS 1 provides a distance in the vertical direction between the upper electrode 36 and the ground conductor 50 .
- capacitive coupling between the ground conductor 50 and the upper electrode 36 is suppressed.
- the distance in the vertical direction between an upper surface of the upper electrode 36 and a lower surface of the second portion 52 of the ground conductor 50 is set to, for example, 60 mm or more.
- the third portion 53 has a cylindrical shape. A central axis of the third portion 53 approximately coincides with the central axis AX. The third portion 53 is extended closer to the central axis than the first portion 51 . The third portion 53 is extended upwards from the second portion 52 .
- the third portion 53 provides a second space IS 2 .
- the second space IS 2 is a space within the second portion 52 and is a part of the space within the ground conductor 50 (i.e., at the upper electrode 36 side).
- the second space IS 2 is continuous with the first space IS 1 .
- the power feed conductor 48 is extended upwards through the first space IS 1 and the second space IS 2 .
- the exterior space ES is provided by the ground conductor 50 at the outside of the third portion 53 , on the second portion 52 and above the interior space 10 s .
- the exterior space ES is extended in a circumferential direction around the central axis AX at the outside of the third portion 53 and on the second portion 52 .
- the electromagnet 60 is placed in the exterior space ES. Further, the distance in the vertical direction between a lower end of the electromagnet 60 placed in the exterior space ES and the upper surface of the upper electrode 36 is greater than 60 mm. Also, the distance in the vertical direction between the lower end of the electromagnet 60 and the substrate W placed on the supporting table 14 may be equal to or less than 230 mm.
- the distance between the electromagnet 60 placed in the exterior space ES and the interior space 10 s is relatively short. Further, as described above, the electromagnet 60 forms, within the interior space 10 s , the magnetic field distribution having the low horizontal component near the central axis AX and the high horizontal component at the portion distanced from the central axis. Thus, by the electromagnet 60 placed outside the ground conductor 50 , the magnetic field distribution suitable for obtaining the uniform plasma density distribution may be efficiently formed within the interior space 10 s.
- the drive power supply 66 is connected to the coil 64 of the electromagnet 60 as described above.
- the electromagnet 60 and the drive power supply 66 are placed outside the ground conductor 50 .
- a filter configured to suppress the high frequency power from being introduced into the drive power supply 66 may not be provided between the coil 64 and the drive power supply 66 .
- the ground conductor 50 further includes a fourth portion 54 , a fifth portion 55 and a sixth portion 56 .
- the fourth portion 54 is extended above the second portion 52 from the third portion 53 in the radial direction with respect to the central axis AX.
- the fourth portion 54 has a plate shape that is extended in the direction intersecting or orthogonal to the central axis AX.
- the fifth portion 55 has a cylindrical shape. A central axis of the fifth portion 55 approximately coincides with the central axis AX.
- the fifth portion 55 is farther away from the central axis than the third portion 53 and extended upwards from the fourth portion 54 .
- the sixth portion 56 is extended above the fourth portion 54 from the fifth portion 55 toward the central axis AX.
- the sixth portion 56 has a plate shape that is extended in the direction intersecting or orthogonal to the central axis AX.
- the ground conductor 50 further includes a lid 57 that is extended from the sixth portion to near the power feed conductor 48 .
- the fourth portion 54 , the fifth portion 55 and the sixth portion 56 provide a third space IS 3 .
- the third space IS 3 is a space surrounded by the fourth portion 54 , the fifth portion 55 and the sixth portion 56 and is a part of the space within the ground conductor 50 .
- the third space IS 3 is continuous with the second space IS 2 .
- the power feed conductor 48 is further extended upwards through the third space IS 3 .
- the first portion to the sixth portion are constituted by three members, but the number of members constituting the ground conductor 50 may be any arbitrary number.
- FIG. 4 is a plan view illustrating an example of a configuration within the ground conductor of the plasma processing apparatus illustrated in FIG. 3 .
- FIG. 4 illustrates a state where the fifth portion 55 of the ground conductor 50 is cut in a horizontal plane.
- the plasma processing apparatus 1 further includes a pipe 71 as illustrated in FIG. 3 and FIG. 4 .
- the pipe 71 is extended upwards from the upper electrode 36 through the first space IS 1 and the second space IS 2 , and passes through the third space IS 3 to be extended to the lateral side and the outside of the ground conductor 50 .
- the pipe 71 is connected to the chiller unit 42 outside the ground conductor 50 .
- a coolant from the chiller unit 42 is supplied into the flow path 40 p via the pipe 71 .
- the pipe 71 is substantially shielded from the upper electrode 36 by the fourth portion 54 of the ground conductor 50 .
- the plasma processing apparatus 1 further includes a pipe 72 .
- the pipe 72 is extended upwards through the first space IS 1 and the second space IS 2 , and passes through the third space IS 3 to be extended to the lateral side and the outside of the ground conductor 50 .
- the pipe 72 is connected to the chiller unit 42 outside the ground conductor 50 .
- the coolant returns from the flow path 40 p to the chiller unit 42 via the pipe 72 .
- the pipe 72 is substantially shielded from the upper electrode 36 by the fourth portion 54 of the ground conductor 50 .
- the plasma processing apparatus 1 further includes a pipe 73 .
- the pipe 73 is extended upwards from the upper electrode 36 through the first space IS 1 and the second space IS 2 , and passes through the third space IS 3 to be extended to the lateral side and the outside of the ground conductor 50 .
- the pipe 73 is connected to the gas supply 41 outside the ground conductor 50 .
- a gas output from the gas supply 41 is supplied to the upper electrode 36 , i.e., the shower head via the pipe 73 .
- the pipe 73 is substantially shielded from the upper electrode 36 by the fourth portion 54 of the ground conductor 50 .
- the gas supply 41 and the upper electrode 36 i.e., the shower head
- the plasma processing apparatus 1 further includes a DC power supply 74 and a wire 75 .
- the DC power supply 74 is configured to generate a negative DC voltage to be applied to the upper electrode 36 .
- the wire 75 connects the DC power supply 74 and the upper electrode 36 to each other.
- the wire 75 may include a coil 75 c .
- the coil 75 c is provided within the third space IS 3 .
- the wire 75 is extended upwards from the upper electrode 36 through the first space IS 1 and the second space IS, and passes through the third space IS 3 to be extended to the lateral side and the outside of the ground conductor 50 .
- the wire 75 is electrically insulated from the fifth portion 55 and the ground conductor 50 .
- the wire 75 is connected to the DC power supply 74 outside the ground conductor 50 .
- the wire 75 is substantially shielded from the upper electrode 36 by the fourth portion 54 of the ground conductor 50 .
- the plasma processing apparatus 1 further includes a controller 80 .
- the controller 80 is configured to control components of the plasma processing apparatus 1 .
- the controller 80 may be a computer device.
- the controller 80 may include a processor, a storage such as a memory, an input device such as a keyboard, a mouse or a touch panel, a display device, an input/output interface of a control signal, and the like.
- the storage is configured to store control programs and recipe data.
- the processor of the controller 80 executes the control programs and sends a control signal for controlling each component of the plasma processing apparatus 1 according to the recipe data.
- the controller 80 can control each component of the plasma processing apparatus 1 in order to perform the method MT.
- FIG. 5 A is a partial cross-sectional view of an example of a substrate to which a process ST 1 of a method MT illustrated in FIG. 1 is applied.
- FIG. 5 B is a partial cross-sectional view of an example of the substrate to which a process ST 2 of the method MT is applied.
- FIG. 5 C is a partial cross-sectional view of an example of the substrate after the method MT is ended.
- the method MT will be explained with reference to a case where the method MT is applied to the substrate W illustrated in FIG. 2 by using the plasma processing apparatus 1 . Also, hereinafter, control of each component of the plasma processing apparatus 1 by the controller 80 will be described.
- the substrate W is placed on the supporting table 14 (on the electrostatic chuck 20 ) and held on the electrostatic chuck 20 . Further, in the method MT, a process ST 1 is performed. In the process ST 1 , plasma from a processing gas is formed within the chamber 10 to form a deposit DP on the substrate W as illustrated in FIG. 5 A .
- the processing gas used in the process ST 1 contains a fluorocarbon gas.
- the deposit DP contains fluorocarbon. The fluorocarbon contained in the deposit DP is supplied from the plasma formed from the processing gas.
- the fluorocarbon gas used in the process ST 1 may include any one of C 4 F 6 gas, C 4 F 8 gas and C 6 F 8 gas.
- the processing gas used in the process ST 1 may further contain one or more other gases in addition to the fluorocarbon gas. If the first region R 1 of the substrate W is formed of the low dielectric constant material (for example, SiOC or SiOCH), the processing gas used in the process ST 1 may further contain a rare gas (for example, Ar gas) in addition to the fluorocarbon gas.
- the processing gas used in the process ST 1 may further contain a rare gas (for example, Ar gas) and a nitrogen gas (N 2 gas) in addition to the fluorocarbon gas.
- a rare gas for example, Ar gas
- N 2 gas nitrogen gas
- the processing gas used in the process ST 1 may further contain a rare gas (for example, Ar gas) in addition to the fluorocarbon gas. Otherwise, if the first region R 1 of the substrate W is formed of SiO 2 , the processing gas used in the process ST 1 may further contain a rare gas (for example, Ar gas) and an oxygen containing gas (for example, O 2 gas or CO gas) in addition to the fluorocarbon gas.
- a rare gas for example, Ar gas
- an oxygen containing gas for example, O 2 gas or CO gas
- the controller 80 performs a first control to perform the process ST 1 .
- the controller 80 controls the gas supply 41 to supply the processing gas into the chamber 10 and controls the first high frequency power supply 43 to supply a first high frequency power.
- the controller 80 may further control the exhaust device 34 to adjust the pressure within the chamber 10 .
- the controller 80 may further control the second high frequency power supply 44 to stop the supply of the second high frequency power.
- the controller 80 may further control the second high frequency power supply 44 to supply the second high frequency power.
- a power level of the second high frequency power in the first control is set to be lower than a power level of the second high frequency power in a second control (control of a process ST 2 ) to be described later.
- the processing gas is excited within the chamber 10 and the plasma is formed from the processing gas.
- the fluorocarbon contained in the plasma is deposited on the substrate W to form the deposit DP on the substrate W as illustrated in FIG. 5 A .
- a subsequent process ST 2 plasma from a rare gas is formed within the chamber 10 .
- the rare gas is supplied into the chamber 10 .
- an N 2 gas and/or an O 2 gas as well as the rare gas may be supplied into the chamber 10 .
- a silicon containing material of the first region R 1 of the substrate W is the low dielectric constant material (for example, SiOC or SiOCH)
- an Ar gas, a mixed gas of a N 2 gas and an Ar gas, or a mixed gas of a N 2 gas an O 2 gas and an Ar gas may be supplied into the chamber 10 in the process ST 2 .
- an Ar gas may be supplied into the chamber 10 in the process ST 2 .
- the above-described gas containing the rare gas is excited within the chamber to form the plasma.
- rare gas ions from the plasma are supplied to the substrate W.
- the fluorocarbon contained in the deposit DP reacts with the silicon containing material of the first region R 1 , so that the first region R 1 is etched as illustrated in FIG. 5 B .
- the magnetic field distribution is formed within the chamber 10 by the electromagnet 60 .
- the electromagnet 60 forms the magnetic field distribution in which the horizontal component on the edge side of the substrate is higher than the horizontal component on the center of the substrate W.
- the controller 80 performs a second control to perform the process ST 2 .
- the controller 80 controls the gas supply 41 to supply the above-described gas containing the rare gas into the chamber 10 and controls the first high frequency power supply 43 to supply the first high frequency power.
- the controller 80 may further control the exhaust device 34 to adjust the pressure within the chamber 10 .
- the controller 80 further controls the second high frequency power supply 44 to supply the second high frequency power.
- the controller 80 controls the drive power supply 66 to form the above- described magnetic field distribution by the electromagnet 60 .
- the process ST 1 and the process ST 2 are alternately repeated.
- the controller 80 repeats the first control and the second control alternately.
- a process ST 3 is performed.
- the stop condition is used to determine whether or not to stop an alternating repetition of the process ST 1 and the process ST 2 .
- the stop condition is satisfied, for example, when the process ST 1 and the process ST 2 have been alternately repeated a predetermined number of times. If it is determined in the third process ST 3 that the stop condition is not satisfied, the process ST 1 and the process ST 2 are sequentially performed again. If it is determined in the third process ST 3 that the stop condition is satisfied, the method MT is ended. As a result, the first region R 1 is etched as illustrated in FIG. 5 C . Further, each of the process ST 1 and the process ST 2 may be performed only once. In this case, the method MT does not include the process ST 3 .
- the density of plasma increases on the center of the substrate W and decreases on the edge side of the substrate W.
- the magnetic field distribution in which the horizontal component on the edge side of the substrate W is higher than the horizontal component on the center of the substrate W is formed while the rare gas ions are generated in the process ST 2 . Therefore, the density of plasma on the edge side of the substrate W increases.
- the plasma has the uniform density distribution in the diametric direction. Since the rare gas ions from the plasma having the above-described uniform density distribution are incident to the substrate W, the reaction between the fluorocarbon contained in the deposit and the silicon containing material of the first region is promoted. Meanwhile, the second region R 2 is protected by the deposit DP. Therefore, the in-plane uniformity in the processing for selectively etching the first region R 1 of the substrate W with respect to the second region R 2 of the substrate W can be improved.
- another plasma processing apparatus may be used as long as it is capable of forming the magnetic field.
- the other plasma processing apparatus which is different from the plasma processing apparatus 1 may include a capacitively coupled plasma processing apparatus, an inductively coupled plasma processing apparatus or a plasma processing apparatus, which forms plasma with a surface wave such as a micro wave.
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Abstract
In an etching method, plasma from a processing gas containing a fluorocarbon gas is formed within a chamber of a plasma processing apparatus, and a deposit containing fluorocarbon is formed on a substrate. The substrate includes a first region formed of a silicon containing material and a second region formed of a metal containing material. Subsequently, plasma from a rare gas is formed within the chamber, and rare gas ions are supplied to the substrate. As a result, the first region is etched by the fluorocarbon contained in the deposit. When the plasma from the rare gas is formed, a magnetic field distribution in which a horizontal component on an edge side of the substrate is higher than a horizontal component on a center of the substrate is formed by an electromagnet.
Description
- This application is a divisional application of U.S. Pat. No. 16/979,257 filed on Sep. 9, 2020, which is a U.S. national phase application under 35 U.S.C. § 371 of PCT Application No. PCT/JP2019/031227 filed on Aug. 7, 2019, which claims the benefit of Japanese Patent Application No. 2018-154914 filed on Aug. 21, 2018, the entire disclosures of which are incorporated herein by reference.
- The various aspects and embodiments described herein pertain generally to an etching method and a plasma processing apparatus.
- In the manufacturing of electronic devices, plasma etching is performed using a plasma processing apparatus. In the plasma etching, a first region of a substrate is selectively etched with respect to a second region of the substrate. The second region is formed of a material different from that of the first region.
Patent Document 1 discloses a method for selectively etching a first region of silicon oxide with respect to a second region of silicon nitride. - According to the method disclosed in
Patent Document 1, a deposit containing fluorocarbon is formed on a substrate. To form the deposit, plasma from a fluorocarbon gas is formed in a chamber of a plasma processing apparatus. Then, ions of a rare gas are supplied onto the substrate. To generate the ions of the rare gas, plasma of the rare gas is formed in the chamber. When the ions of the rare gas are supplied onto the substrate, fluorocarbon contained in the deposit reacts with silicon oxide in the first region. As a result, the first region is etched. Meanwhile, the second region is protected by the deposit. - Patent Document 1: Japanese Patent Laid-open Publication No. 2016-136606
- In one exemplary embodiment, an etching method performed in a plasma processing apparatus is provided. The etching method is performed in a state where a substrate is placed in a chamber of the plasma processing apparatus. The etching method includes forming plasma from a processing gas containing a fluorocarbon gas within the chamber to form a deposit containing fluorocarbon on the substrate. The substrate has a first region formed of a silicon containing material and a second region formed of a metal containing material. Further, the etching method further includes forming plasma from a rare gas within the chamber to etch the first region by supplying rare gas ions to the substrate to react the fluorocarbon contained in the deposit on the substrate with the silicon containing material of the first region. In the forming of the plasma from the rare gas, a magnetic field distribution in which a horizontal component on an edge side of the substrate is higher than a horizontal component on a center of the substrate is formed by an electromagnet.
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FIG. 1 is a flowchart showing an etching method according to an exemplary embodiment. -
FIG. 2 is a partial cross-sectional view of an example of a substrate. -
FIG. 3 is a diagram schematically illustrating a plasma processing apparatus according to the exemplary embodiment. -
FIG. 4 is a plan view illustrating an example of a configuration within a ground conductor of the plasma processing apparatus illustrated inFIG. 3 . -
FIG. 5A is a partial cross-sectional view of an example of a substrate to which a process ST1 of a method MT illustrated inFIG. 1 is applied,FIG. 5B is a partial cross-sectional view of an example of the substrate to which a process ST2 of the method MT is applied, andFIG. 5C is a partial cross-sectional view of an example of the substrate after the method MT is ended. - Hereinafter, various exemplary embodiments will be described.
- In one exemplary embodiment, an etching method performed in a plasma processing apparatus is provided. The etching method is performed in a state where a substrate is placed in a chamber of the plasma processing apparatus. The etching method includes forming plasma from a processing gas containing a fluorocarbon gas within the chamber to form a deposit containing fluorocarbon on the substrate. The substrate has a first region formed of a silicon containing material and a second region formed of a metal containing material. Further, the etching method further includes forming plasma from a rare gas within the chamber to etch the first region by supplying rare gas ions to the substrate to react the fluorocarbon contained in the deposit on the substrate with the silicon containing material of the first region. In the forming of the plasma from the rare gas, a magnetic field distribution in which a horizontal component on an edge side of the substrate is higher than a horizontal component on a center of the substrate is formed by an electromagnet.
- Generally, in the plasma processing apparatus, the density of plasma increases on the center of the substrate and decreases on the edge side of the substrate. In the above-described exemplary embodiment, the magnetic field distribution in which the horizontal component on the edge side of the substrate is higher than the horizontal component on the center of the substrate is formed while the rare gas ions are generated. Therefore, the density of plasma on the edge side of the substrate increases. As a result, the plasma has the uniform density distribution in the diametric direction. Since the rare gas ions from the plasma having the above-described uniform density distribution are incident to the substrate, the reaction between the fluorocarbon contained in the deposit and the silicon containing material of the first region is promoted. The second region is protected by the deposit. Therefore, the in-plane uniformity in the processing of selectively etching the first region of the substrate with respect to the second region of the substrate can be improved.
- The silicon containing material may be SiO2, SiOC or SiOCH.
- The metal containing material may be any one of metal materials of titanium, tungsten, zirconium, aluminum, tantalum, cobalt or ruthenium, or an oxide, a nitride or a carbide of the corresponding metal material.
- The fluorocarbon gas may contain a C4F8 gas and/or a C4F6 gas.
- The forming of the plasma from the processing gas and the forming of the plasma from the rare gas may be alternately repeated.
- In another exemplary embodiment, a plasma processing apparatus is provided. The plasma processing apparatus includes a chamber; a substrate supporting table; a gas supply; a high frequency power supply; an electromagnet; a drive power supply and a controller. The substrate supporting table has a lower electrode and is provided within the chamber. The gas supply is configured to supply a processing gas containing a fluorocarbon gas and a rare gas into the chamber. The high frequency power supply I configured to generate a high frequency power to excite a gas within the chamber. The electromagnet is configured to form a magnetic field within an interior space of the chamber. The drive power supply is configured to supply a current to the electromagnet. The controller is configured to control the gas supply, the high frequency power supply and the drive power supply. The controller performs a first control and a second control. In the first control, the controller controls the gas supply to supply the processing gas into the chamber and controlling the high frequency power supply to supply the high frequency power to form a deposit containing fluorocarbon from plasma formed from the processing gas on a substrate placed on the substrate supporting. In the second control, the controller controls the gas supply to supply the rare gas into the chamber and controls the high frequency power supply to supply the high frequency power to supply rare gas ions to the substrate on which the deposit is formed. The controller controls the drive power supply to form a magnetic field distribution in which a horizontal component on an edge side of the substrate is higher than a horizontal component on a center of the substrate by the electromagnet.
- The fluorocarbon gas may contain a C4F8 gas and/or a C4F6 gas.
- The controller may be configured to alternately repeat the first control and the second control.
- Hereinafter, various exemplary embodiments of the present disclosure will be explained with reference to the accompanying drawings. Further, in the drawings, similar symbols typically identify similar components unless context dictates otherwise.
-
FIG. 1 is a flowchart showing an etching method according to an exemplary embodiment. The etching method (hereinafter, referred to as “method MT”) according to the exemplary embodiment is performed to selectively etch a first region of a substrate with respect to a second region thereof. -
FIG. 2 is a partial cross-sectional view of an example of a substrate. An example of a substrate W illustrated inFIG. 2 can be processed by the method MT. The substrate W may have a disc shape like a wafer. The substrate W has a first region R1 and a second region R2. The substrate W may further have an underlying region UR. The first region R1 and the second region R2 are provided on the underlying region UR. In the exemplary embodiment, the first region R1 is provided on the underlying region UR and the second region R2 is provided on the first region R1. The second region R2 is patterned like a mask. That is, the second region R2 provides an opening. In another exemplary embodiment, the first region R1 may be formed to fill a recess provided by the second region R2. - The first region R1 is a region to be selectively etched. The first region R1 is formed of a silicon containing material. The silicon containing material of the first region R1 is, for example, SiO2. The silicon containing material of the first region R1 may be a low dielectric constant material. The low dielectric constant material is, for example, SiOC or SiOCH.
- The second region R2 is formed of a metal containing material. The metal containing material is any one of metal materials, for example, titanium, tungsten, zirconium, aluminum, tantalum, cobalt or ruthenium, or an oxide, a nitride or a carbide of the metal material.
- The method MT is performed in a state where the substrate is placed within a chamber of a plasma processing apparatus.
FIG. 3 is a diagram schematically illustrating a plasma processing apparatus according to the exemplary embodiment. Aplasma processing apparatus 1 illustrated inFIG. 3 includes achamber 10. Thechamber 10 is a container in which aninterior space 10 s is provided. Thechamber 10 has an approximately cylindrical shape. A central axis AX illustrated inFIG. 3 is the central axis of thechamber 10 and theinterior space 10 s. - The
chamber 10 includes a chambermain body 12. The chambermain body 12 has an approximately cylindrical shape. Theinterior space 10 s of thechamber 10 is provided within the chambermain body 12. The chambermain body 12 includes aside wall 12 a and abottom portion 12 b. Theside wall 12 a constitutes a side wall of thechamber 10. Thebottom portion 12 b constitutes a bottom portion of thechamber 10. The chambermain body 12 is formed of a metal such as aluminum. A film having plasma resistance is formed on an inner wall surface of the chambermain body 12. This film may be a ceramic film such as an alumite film or an yttrium oxide film. The chambermain body 12 is grounded. - A
passage 12 p is formed at theside wall 12 a. The substrate W is transferred between theinterior space 10 s and the outside of thechamber 10 through thepassage 12 p. Thepassage 12 p can be opened or closed by agate valve 12 g. Thegate valve 12 g is provided along theside wall 12 a. - A substrate supporting table, i.e., a supporting table 14, is provided within the
interior space 10 s. The supporting table 14 is supported by a supportingbody 15. The supportingbody 15 has a cylindrical shape. The supportingbody 15 is extended upwards from thebottom portion 12 b of the chambermain body 12. The supportingbody 15 has the insulating property. The supportingbody 15 is formed of, for example, ceramic. - The supporting table 14 is configured to support the substrate W. The supporting table 14 commonly shares the central axis AX with the
chamber 10. A placingregion 14 r is provided on the supporting table 14. The center of the placingregion 14 r is located on the central axis AX. The substrate W is placed on the placingregion 14 r such that the center of the substrate W is located on the central axis AX. - The supporting table 14 includes an
electrode plate 16, alower electrode 18 and anelectrostatic chuck 20. Theelectrode plate 16 has an approximately disc shape. Theelectrode plate 16 has conductivity. Theelectrode plate 16 is formed of a metal such as aluminum. Thelower electrode 18 has a disc shape. Thelower electrode 18 has conductivity. Thelower electrode 18 is formed of a metal such as aluminum. Thelower electrode 18 is provided on theelectrode plate 16. Thelower electrode 18 is electrically connected to theelectrode plate 16. - A
flow path 18 p is formed within thelower electrode 18. Theflow path 18 p is extended in, for example, a spiral shape within thelower electrode 18. A heat exchange medium (e.g., coolant) is supplied into theflow path 18 p from a circulation unit 22 (e.g., chiller unit) for circulating the heat exchange medium. Thecirculation unit 22 is provided outside thechamber 10. The heat exchange medium supplied into theflow path 18 p is returned back to thecirculation unit 22. A temperature of the substrate W placed on the supporting table 14 is adjusted by heat exchange between the heat exchange medium and thelower electrode 18. - The
electrostatic chuck 20 is provided on thelower electrode 18. Theelectrostatic chuck 20 has an approximately disc shape. Theelectrostatic chuck 20 has a main body and an electrode. The main body of theelectrostatic chuck 20 is formed of a dielectric material (for example, ceramic). The electrode of theelectrostatic chuck 20 is a conductive film and provided within the main body of theelectrostatic chuck 20. The electrode of theelectrostatic chuck 20 is connected to aDC power supply 24 via a switch. Theelectrostatic chuck 20 provides the above-describedplacing region 14 r. When a DC voltage is applied to the electrode of theelectrostatic chuck 20 from theDC power supply 24 in a state where the substrate W is placed on the electrostatic chuck 20 (on the placingregion 14 r), electrostatic attraction force is generated between the substrate W and theelectrostatic chuck 20. The substrate W is attracted to theelectrostatic chuck 20 by the generated electrostatic attraction force and held on theelectrostatic chuck 20. Theplasma processing apparatus 1 may be equipped with a heat transfer gas supply line through which a heat transfer gas (for example, He gas) is supplied between theelectrostatic chuck 20 and a rear surface of the substrate W. - One or more heaters (for example, one or more resistance heating devices) may be provided within the
electrostatic chuck 20. When a power is supplied to one or more heaters from a heater controller, the one or more heaters generate heat, and, thus, the temperature of theelectrostatic chuck 20 and the temperature of the substrate W can be controlled. - A focus ring FR is provided on the supporting table 14. The focus ring FR is placed to surround the edges of the
electrostatic chuck 20 and the substrate W. The focus ring FR is an annular plate and formed of a silicon containing material such as silicon, quartz or the like. The focus ring FR is provided to improve the uniformity in a plasma processing. - A
cylindrical conductor 26 is provided around the supportingbody 15. Theconductor 26 is grounded. Acylindrical insulator 28 is provided above theconductor 26 to surround the supporting table 14. Theinsulator 28 is formed of ceramic such as quartz. An exhaust path is formed between the supporting table 14 and theside wall 12 a of the chambermain body 12. Abaffle plate 30 is provided in the exhaust path. Thebaffle plate 30 is an annular plate. A plurality of holes is formed in thebaffle plate 30 to penetrate thebaffle plate 30 in a thickness direction thereof. Thebaffle plate 30 is formed of a metal member, such as aluminum, coated with a film, such as yttrium oxide, having plasma resistance. - Under the
baffle plate 30, anexhaust line 32 is connected to thebottom portion 12 b of the chambermain body 12. Theexhaust line 32 can communicate with the exhaust path. Theexhaust line 32 is connected to anexhaust device 34. Theexhaust device 34 includes an automatic pressure control valve and a vacuum pump such as a turbo molecular pump. When theexhaust device 34 is operated, the pressure within theinterior space 10 s is set to a predetermined level. - An
upper electrode 36 is provided above the supporting table 14. A part of theinterior space 10 s is interposed between theupper electrode 36 and the supporting table 14. Theupper electrode 36 is provided to close an upper opening of the chambermain body 12. Amember 37 is interposed between theupper electrode 36 and an upper end portion of the chambermain body 12. Themember 37 is formed of an insulating material. Themember 37 may be formed of ceramic, for example, quartz. In the exemplary embodiment, themember 37 and a part of a ground conductor to be described later may be interposed between theupper electrode 36 and the upper end portion of the chambermain body 12. - In the exemplary embodiment, the
upper electrode 36 constitutes a shower head. In the exemplary embodiment, theupper electrode 36 includes aceiling plate 38 and a supportingbody 40. Theceiling plate 38 is formed of, for example, silicon. Otherwise, theceiling plate 38 is formed of an aluminum member coated with a ceramic film, such as yttrium oxide. A plurality of gas discharge holes 38 h is formed in theceiling plate 38 to penetrate theceiling plate 38 in a thickness direction thereof. - The supporting
body 40 is provided on theceiling plate 38. The supportingbody 40 is configured to detachably support theceiling plate 38. The supportingbody 40 is formed of a conductive material such as aluminum. Agas diffusion space 40 d is formed within the supportingbody 40. A plurality ofholes 40 h is formed in the supportingbody 40. The plurality ofholes 40 h is extended downwards from thegas diffusion space 40 d. Theholes 40 h communicate with the gas discharge holes 38 h, respectively. - The
gas diffusion space 40 d is connected to agas supply 41. Thegas supply 41 is configured to supply a gas into thechamber 10, i.e., into theinterior space 10 s. Thegas supply 41 is configured to supply a plurality of gases used in the method MT. The plurality of gases used in the method MT includes a fluorocarbon gas and a rare gas. The fluorocarbon gas includes one or more of, for example, C4F6 gas, C4F8 gas and C6F8 gas, but may be another fluorocarbon gas. The rare gas is, for example, Ar gas, but may be another rare gas. The plurality of gases used in the method MT may further include other gases. The plurality of gases used in the method MT may further include one or more of a nitrogen gas (N2 gas) and an oxygen containing gas (for example, O2 gas or CO gas). Thegas supply 41 is equipped with a plurality of flow rate controllers and a plurality of valves. Thegas supply 41 is configured to individually adjust the flow rates of one or more gases to be supplied. The gas supplied from thegas supply 41 is discharged into theinterior space 10 s from the plurality of gas discharge holes 38 h through thegas diffusion space 40 d and the plurality ofholes 40 h. - A
flow path 40 p is formed in the supportingbody 40. Achiller unit 42 is connected to theflow path 40 p. A coolant such as cooling water is circulated between theflow path 40 p and thechiller unit 42. A temperature of theupper electrode 36 is adjusted by heat exchange between theupper electrode 36 and the coolant supplied from thechiller unit 42 to theflow path 40 p. - The
plasma processing apparatus 1 further includes a first highfrequency power supply 43 and a second highfrequency power supply 44. The first highfrequency power supply 43 and the second highfrequency power supply 44 are provided outside thechamber 10. The first highfrequency power supply 43 is configured to mainly generate a first high frequency power for plasma formation. The first high frequency power may have a frequency of, for example, 100 MHz, but is not limited thereto. The first highfrequency power supply 43 is electrically connected to theupper electrode 36 via amatching device 45 and apower feed conductor 48. Thematching device 45 includes a matching circuit configured to match an output impedance of the first highfrequency power supply 43 with an impedance of a load side (theupper electrode 36 side). A lower end of thepower feed conductor 48 is connected to theupper electrode 36. Thepower feed conductor 48 is extended upwards from theupper electrode 36. Thepower feed conductor 48 is a cylindrical or rod-shaped conductor, and a central axis of thepower feed conductor 48 substantially coincides with the central axis AX. Further, the first highfrequency power supply 43 may be electrically connected to thelower electrode 18, instead of theupper electrode 36, via thematching device 45. - The second high
frequency power supply 44 is configured to mainly generate a second high frequency power, i.e., high frequency bias power, for ion attraction to the substrate W. A frequency of the second high frequency power is lower than the frequency of the first high frequency power. In the exemplary embodiment, the frequency of the second high frequency power may be greater than 13.56 MHz. In the exemplary embodiment, the frequency of the second high frequency power may be equal to or greater than 40 MHz. In the exemplary embodiment, the frequency of the second high frequency power may be equal to or greater than 60 MHz. The second highfrequency power supply 44 is electrically connected to thelower electrode 18 via amatching device 46. Thematching device 46 includes a matching circuit configured to match an output impedance of the second highfrequency power supply 44 with an impedance of a load side (thelower electrode 18 side). - The
plasma processing apparatus 1 further includes aground conductor 50. Theground conductor 50 has conductivity. Theground conductor 50 is formed of a metal such as aluminum. Theground conductor 50 is grounded. Theground conductor 50 is extended to cover theupper electrode 36 above the chambermain body 12. Thepower feed conductor 48 is extended upwards through a space surrounded by theground conductor 50 and is connected to the first highfrequency power supply 43 via thematching device 45 outside theground conductor 50. - In the
interior space 10 s of theplasma processing apparatus 1, an electric field intensity distribution having a high electric field intensity on the center of the substrate W and a low electric field intensity on the edge side of the substrate W may be formed. That is, a non-uniform electric field intensity distribution in which the electric field intensity decreases as the distance from the central axis AX increases in a radial direction (i.e., a diametric direction) may be formed within theinterior space 10 s. Under the non-uniform electric field intensity distribution, the density of plasma is high near the central axis AX and low in a portion distant from the central axis AX. That is, a non-uniform plasma density distribution is formed in the radial direction with respect to the central axis AX. Theplasma processing apparatus 1 further includes anelectromagnet 60 in order to obtain a uniform plasma density distribution. - As illustrated in
FIG. 3 , theelectromagnet 60 is placed above theupper electrode 36. Theelectromagnet 60 is configured to form a magnetic field distribution, in which a horizontal component at a portion distanced from the central axis AX is higher than a horizontal component on the central axis AX, within theinterior space 10 s. That is, theelectromagnet 60 forms a magnetic field distribution having a horizontal component, whose magnitude increases as the distance from the central axis AX increases in the radial direction, within theinterior space 10 s. In a portion in which a magnetic field having a high horizontal component is formed, the residence time of electrons increases. As a result, the density of plasma increases in the portion in which the magnetic field having the high horizontal component is formed. Thus, in theplasma processing apparatus 1, it is possible to obtain a uniform plasma density distribution in the radial direction with respect to the central axis AX. Therefore, in theplasma processing apparatus 1, the in-plane uniformity of the processing on the substrate W is improved. - In the exemplary embodiment, the
electromagnet 60 includes ayoke 62 and acoil 64. Theyoke 62 is formed of a magnetic material. Theyoke 62 includes abase portion 62 a and a plurality ofcylindrical portions 62 b. Thebase portion 62 a has an approximately annular shape and approximately disc shape, and is extended in a direction orthogonal to the central axis AX. Each of the plurality ofcylindrical portions 62 b has a cylindrical shape and is extended downwards from thebase portion 62 a. The plurality ofcylindrical portions 62 b is provided coaxially with respect to the central axis AX. Thecoil 64 is wound around the central axis AX. Thecoil 64 is provided between two adjacentcylindrical portions 62 b in the radial direction. In addition, theelectromagnet 60 may include one or more coils 64. If theelectromagnet 60 includes a plurality ofcoils 64, the plurality ofcoils 64 is provided coaxially with respect to the central axis AX. - The
coil 64 of theelectromagnet 60 is connected to adrive power supply 66 via awire 68. When a current is applied from thedrive power supply 66 to thecoil 64, a magnetic field is formed by theelectromagnet 60. In a portion in which an angle of a vector of the magnetic field formed by theelectromagnet 60 is 45°, the electron confinement effect (the effect of suppressing diffusion of electrons) in the radial direction (diametric direction) and the effect of suppressing annihilation of electrons (the effect of suppressing electrons from reaching the electrode) are well compatible with each other. Therefore, the density of plasma increases in the corresponding portion. Thus, when the radius of the substrate W is, for example, 150 mm, theelectromagnet 60 may be configured such that the distance between the portion in which the angle of the vector of the magnetic field is 45° and the central axis AX is 135 mm or more and 185 mm or less. Therefore, in the exemplary embodiment, the average of the inner diameter and the outer diameter of onecoil 64 of theelectromagnet 60 is set to be equal to or greater than the distance between the central axis AX and the edge of the substrate W. When the radius of the substrate W is 150 mm, the average of the inner diameter and the outer diameter of thecoil 64 of theelectromagnet 60 is set to 150 mm or more and 250 mm or less. In addition, the angle of the vector of the magnetic field is 0° when the magnetic field has only a downward component, and is 90° when the magnetic field has only a component (horizontal component) in the radial direction. Thus, when the angle of the vector of the magnetic field is 45°, the magnetic field has both a horizontal component and a vertical component. - When the
electromagnet 60 is placed in the space surrounded by the ground conductor covering the upper electrode, the first high frequency power is introduced into theelectromagnet 60 and/or a wire that connects theelectromagnet 60 and a power supply (drive power supply). As a result, the electric field intensity within theinterior space 10 s varies locally. Thus, theelectromagnet 60 is placed outside the ground conductor. However, when theelectromagnet 60 is placed in a space above an upper end of the ground conductor, the distance in the vertical direction from theelectromagnet 60 to theinterior space 10 s increases. Therefore, if a high current is not applied to thecoil 64, a magnetic field having a sufficient magnitude cannot be efficiently formed within theinterior space 10 s. In addition, when theelectromagnet 60 is placed on a lateral side of the ground conductor (outside the ground conductor in the radial direction from the central axis), the portion in which the magnetic field having the high horizontal component is formed or the portion in which the magnetic field, the vector of which has an angle of 45°, is provided outside theinterior space 10 s. In order to efficiently form a magnetic field distribution suitable for obtaining the uniform plasma density distribution within theinterior space 10 s, theground conductor 50 is provided with an exterior space ES in which theelectromagnet 60 is placed. The exterior space ES is located closer to theinterior space 10 s than the upper end of theground conductor 50. Further, the exterior space ES is separated upwards from theupper electrode 36, and is shielded from theupper electrode 36 by theground conductor 50. - The
ground conductor 50 includes afirst portion 51, asecond portion 52 and athird portion 53. Thefirst portion 51 has a cylindrical shape. A central axis of thefirst portion 51 approximately coincides with the central axis AX. Thefirst portion 51 is extended upwards from the chambermain body 12. In the example illustrated inFIG. 3 , thefirst portion 51 is extended upwards from an upper end of theside wall 12 a of the chambermain body 12. A lower end portion of thefirst portion 51 is interposed between themember 37 and the upper end of theside wall 12 a. - The
second portion 52 is spaced apart upwards from theupper electrode 36 and extended from thefirst portion 51 toward the central axis AX. Thesecond portion 52 has a plate shape that is extended in a direction intersecting or orthogonal to the central axis AX. Thefirst portion 51 and thesecond portion 52 provide a first space IS1 above theupper electrode 36. The first space IS1 is a part of a space within the ground conductor 50 (i.e., at theupper electrode 36 side). The first space IS1 provides a distance in the vertical direction between theupper electrode 36 and theground conductor 50. Thus, capacitive coupling between theground conductor 50 and theupper electrode 36 is suppressed. The distance in the vertical direction between an upper surface of theupper electrode 36 and a lower surface of thesecond portion 52 of theground conductor 50 is set to, for example, 60 mm or more. - The
third portion 53 has a cylindrical shape. A central axis of thethird portion 53 approximately coincides with the central axis AX. Thethird portion 53 is extended closer to the central axis than thefirst portion 51. Thethird portion 53 is extended upwards from thesecond portion 52. Thethird portion 53 provides a second space IS2. The second space IS2 is a space within thesecond portion 52 and is a part of the space within the ground conductor 50 (i.e., at theupper electrode 36 side). The second space IS2 is continuous with the first space IS1. In addition, thepower feed conductor 48 is extended upwards through the first space IS1 and the second space IS2. - The exterior space ES is provided by the
ground conductor 50 at the outside of thethird portion 53, on thesecond portion 52 and above theinterior space 10 s. The exterior space ES is extended in a circumferential direction around the central axis AX at the outside of thethird portion 53 and on thesecond portion 52. Theelectromagnet 60 is placed in the exterior space ES. Further, the distance in the vertical direction between a lower end of theelectromagnet 60 placed in the exterior space ES and the upper surface of theupper electrode 36 is greater than 60 mm. Also, the distance in the vertical direction between the lower end of theelectromagnet 60 and the substrate W placed on the supporting table 14 may be equal to or less than 230 mm. - The distance between the
electromagnet 60 placed in the exterior space ES and theinterior space 10 s is relatively short. Further, as described above, theelectromagnet 60 forms, within theinterior space 10 s, the magnetic field distribution having the low horizontal component near the central axis AX and the high horizontal component at the portion distanced from the central axis. Thus, by theelectromagnet 60 placed outside theground conductor 50, the magnetic field distribution suitable for obtaining the uniform plasma density distribution may be efficiently formed within theinterior space 10 s. - The
drive power supply 66 is connected to thecoil 64 of theelectromagnet 60 as described above. Theelectromagnet 60 and thedrive power supply 66 are placed outside theground conductor 50. Thus, a filter configured to suppress the high frequency power from being introduced into thedrive power supply 66 may not be provided between thecoil 64 and thedrive power supply 66. - In the exemplary embodiment, the
ground conductor 50 further includes afourth portion 54, afifth portion 55 and asixth portion 56. Thefourth portion 54 is extended above thesecond portion 52 from thethird portion 53 in the radial direction with respect to the central axis AX. Thefourth portion 54 has a plate shape that is extended in the direction intersecting or orthogonal to the central axis AX. Thefifth portion 55 has a cylindrical shape. A central axis of thefifth portion 55 approximately coincides with the central axis AX. Thefifth portion 55 is farther away from the central axis than thethird portion 53 and extended upwards from thefourth portion 54. Thesixth portion 56 is extended above thefourth portion 54 from thefifth portion 55 toward the central axis AX. Thesixth portion 56 has a plate shape that is extended in the direction intersecting or orthogonal to the central axis AX. In the exemplary embodiment, theground conductor 50 further includes alid 57 that is extended from the sixth portion to near thepower feed conductor 48. - The
fourth portion 54, thefifth portion 55 and thesixth portion 56 provide a third space IS3. The third space IS 3 is a space surrounded by thefourth portion 54, thefifth portion 55 and thesixth portion 56 and is a part of the space within theground conductor 50. The third space IS3 is continuous with the second space IS2. Thepower feed conductor 48 is further extended upwards through the third space IS3. Further, in the example illustrated inFIG. 3 , the first portion to the sixth portion are constituted by three members, but the number of members constituting theground conductor 50 may be any arbitrary number. - Hereinafter, reference will be made on
FIG. 4 together withFIG. 3 .FIG. 4 is a plan view illustrating an example of a configuration within the ground conductor of the plasma processing apparatus illustrated inFIG. 3 .FIG. 4 illustrates a state where thefifth portion 55 of theground conductor 50 is cut in a horizontal plane. In the exemplary embodiment, theplasma processing apparatus 1 further includes apipe 71 as illustrated inFIG. 3 andFIG. 4 . Thepipe 71 is extended upwards from theupper electrode 36 through the first space IS1 and the second space IS2, and passes through the third space IS3 to be extended to the lateral side and the outside of theground conductor 50. Thepipe 71 is connected to thechiller unit 42 outside theground conductor 50. A coolant from thechiller unit 42 is supplied into theflow path 40 p via thepipe 71. In the third space IS3, thepipe 71 is substantially shielded from theupper electrode 36 by thefourth portion 54 of theground conductor 50. - The
plasma processing apparatus 1 further includes apipe 72. Thepipe 72 is extended upwards through the first space IS1 and the second space IS2, and passes through the third space IS3 to be extended to the lateral side and the outside of theground conductor 50. Thepipe 72 is connected to thechiller unit 42 outside theground conductor 50. The coolant returns from theflow path 40 p to thechiller unit 42 via thepipe 72. In the third space IS3, thepipe 72 is substantially shielded from theupper electrode 36 by thefourth portion 54 of theground conductor 50. - In the exemplary embodiment, the
plasma processing apparatus 1 further includes apipe 73. Thepipe 73 is extended upwards from theupper electrode 36 through the first space IS1 and the second space IS2, and passes through the third space IS3 to be extended to the lateral side and the outside of theground conductor 50. Thepipe 73 is connected to thegas supply 41 outside theground conductor 50. A gas output from thegas supply 41 is supplied to theupper electrode 36, i.e., the shower head via thepipe 73. In the third space IS3, thepipe 73 is substantially shielded from theupper electrode 36 by thefourth portion 54 of theground conductor 50. Further, thegas supply 41 and the upper electrode 36 (i.e., the shower head) may be connected to each other via a plurality of pipes. - In the exemplary embodiment, the
plasma processing apparatus 1 further includes aDC power supply 74 and awire 75. TheDC power supply 74 is configured to generate a negative DC voltage to be applied to theupper electrode 36. Thewire 75 connects theDC power supply 74 and theupper electrode 36 to each other. Thewire 75 may include acoil 75 c. Thecoil 75 c is provided within the third space IS3. Thewire 75 is extended upwards from theupper electrode 36 through the first space IS1 and the second space IS, and passes through the third space IS3 to be extended to the lateral side and the outside of theground conductor 50. Thewire 75 is electrically insulated from thefifth portion 55 and theground conductor 50. Thewire 75 is connected to theDC power supply 74 outside theground conductor 50. In the third space IS3, thewire 75 is substantially shielded from theupper electrode 36 by thefourth portion 54 of theground conductor 50. - In the exemplary embodiment, the
plasma processing apparatus 1 further includes acontroller 80. Thecontroller 80 is configured to control components of theplasma processing apparatus 1. Thecontroller 80 may be a computer device. Thecontroller 80 may include a processor, a storage such as a memory, an input device such as a keyboard, a mouse or a touch panel, a display device, an input/output interface of a control signal, and the like. The storage is configured to store control programs and recipe data. The processor of thecontroller 80 executes the control programs and sends a control signal for controlling each component of theplasma processing apparatus 1 according to the recipe data. Thecontroller 80 can control each component of theplasma processing apparatus 1 in order to perform the method MT. - Reference will be made on
FIG. 1 again. Further, reference will be made onFIG. 5A ,FIG. 5B andFIG. 5C in addition toFIG. 1 .FIG. 5A is a partial cross-sectional view of an example of a substrate to which a process ST1 of a method MT illustrated inFIG. 1 is applied.FIG. 5B is a partial cross-sectional view of an example of the substrate to which a process ST2 of the method MT is applied.FIG. 5C is a partial cross-sectional view of an example of the substrate after the method MT is ended. Hereinafter, the method MT will be explained with reference to a case where the method MT is applied to the substrate W illustrated inFIG. 2 by using theplasma processing apparatus 1. Also, hereinafter, control of each component of theplasma processing apparatus 1 by thecontroller 80 will be described. - In the method MT, the substrate W is placed on the supporting table 14 (on the electrostatic chuck 20) and held on the
electrostatic chuck 20. Further, in the method MT, a process ST1 is performed. In the process ST1, plasma from a processing gas is formed within thechamber 10 to form a deposit DP on the substrate W as illustrated inFIG. 5A . The processing gas used in the process ST1 contains a fluorocarbon gas. The deposit DP contains fluorocarbon. The fluorocarbon contained in the deposit DP is supplied from the plasma formed from the processing gas. - The fluorocarbon gas used in the process ST1 may include any one of C4F6 gas, C4F8 gas and C6F8 gas. The processing gas used in the process ST1 may further contain one or more other gases in addition to the fluorocarbon gas. If the first region R1 of the substrate W is formed of the low dielectric constant material (for example, SiOC or SiOCH), the processing gas used in the process ST1 may further contain a rare gas (for example, Ar gas) in addition to the fluorocarbon gas. Otherwise, if the first region R1 of the substrate W is formed of the low dielectric constant material (for example, SiOC or SiOCH), the processing gas used in the process ST1 may further contain a rare gas (for example, Ar gas) and a nitrogen gas (N2 gas) in addition to the fluorocarbon gas.
- If the first region R1 of the substrate W is formed of SiO2, the processing gas used in the process ST1 may further contain a rare gas (for example, Ar gas) in addition to the fluorocarbon gas. Otherwise, if the first region R1 of the substrate W is formed of SiO2, the processing gas used in the process ST1 may further contain a rare gas (for example, Ar gas) and an oxygen containing gas (for example, O2 gas or CO gas) in addition to the fluorocarbon gas.
- The
controller 80 performs a first control to perform the process ST1. In the first control, thecontroller 80 controls thegas supply 41 to supply the processing gas into thechamber 10 and controls the first highfrequency power supply 43 to supply a first high frequency power. In the first control, thecontroller 80 may further control theexhaust device 34 to adjust the pressure within thechamber 10. In the first control, thecontroller 80 may further control the second highfrequency power supply 44 to stop the supply of the second high frequency power. Otherwise, in the first control, thecontroller 80 may further control the second highfrequency power supply 44 to supply the second high frequency power. Meanwhile, a power level of the second high frequency power in the first control is set to be lower than a power level of the second high frequency power in a second control (control of a process ST2) to be described later. - In the process ST1, the processing gas is excited within the
chamber 10 and the plasma is formed from the processing gas. The fluorocarbon contained in the plasma is deposited on the substrate W to form the deposit DP on the substrate W as illustrated inFIG. 5A . - In a subsequent process ST2, plasma from a rare gas is formed within the
chamber 10. In the process ST2, the rare gas is supplied into thechamber 10. In the process ST2, an N2 gas and/or an O2 gas as well as the rare gas may be supplied into thechamber 10. If a silicon containing material of the first region R1 of the substrate W is the low dielectric constant material (for example, SiOC or SiOCH), an Ar gas, a mixed gas of a N2 gas and an Ar gas, or a mixed gas of a N2 gas, an O2 gas and an Ar gas may be supplied into thechamber 10 in the process ST2. If the silicon containing material of the first region R1 of the substrate W is SiO2, an Ar gas may be supplied into thechamber 10 in the process ST2. - In the process ST2, the above-described gas containing the rare gas is excited within the chamber to form the plasma. In the process ST2, rare gas ions from the plasma are supplied to the substrate W. As a result, the fluorocarbon contained in the deposit DP reacts with the silicon containing material of the first region R1, so that the first region R1 is etched as illustrated in
FIG. 5B . In the process ST2, while the plasma is being formed, the magnetic field distribution is formed within thechamber 10 by theelectromagnet 60. Specifically, theelectromagnet 60 forms the magnetic field distribution in which the horizontal component on the edge side of the substrate is higher than the horizontal component on the center of the substrate W. - The
controller 80 performs a second control to perform the process ST2. In the second control, thecontroller 80 controls thegas supply 41 to supply the above-described gas containing the rare gas into thechamber 10 and controls the first highfrequency power supply 43 to supply the first high frequency power. In the second control, thecontroller 80 may further control theexhaust device 34 to adjust the pressure within thechamber 10. In the second control, thecontroller 80 further controls the second highfrequency power supply 44 to supply the second high frequency power. Further, in the second control, thecontroller 80 controls thedrive power supply 66 to form the above- described magnetic field distribution by theelectromagnet 60. - In the exemplary embodiment, the process ST1 and the process ST2 are alternately repeated. In this exemplary embodiment, the
controller 80 repeats the first control and the second control alternately. In this exemplary embodiment, a process ST3 is performed. In the process ST3, it is determined whether a stop condition is satisfied. The stop condition is used to determine whether or not to stop an alternating repetition of the process ST1 and the process ST2. The stop condition is satisfied, for example, when the process ST1 and the process ST2 have been alternately repeated a predetermined number of times. If it is determined in the third process ST3 that the stop condition is not satisfied, the process ST1 and the process ST2 are sequentially performed again. If it is determined in the third process ST3 that the stop condition is satisfied, the method MT is ended. As a result, the first region R1 is etched as illustrated inFIG. 5C . Further, each of the process ST1 and the process ST2 may be performed only once. In this case, the method MT does not include the process ST3. - In general, the density of plasma increases on the center of the substrate W and decreases on the edge side of the substrate W. In the method MT, the magnetic field distribution in which the horizontal component on the edge side of the substrate W is higher than the horizontal component on the center of the substrate W is formed while the rare gas ions are generated in the process ST2. Therefore, the density of plasma on the edge side of the substrate W increases. As a result, the plasma has the uniform density distribution in the diametric direction. Since the rare gas ions from the plasma having the above-described uniform density distribution are incident to the substrate W, the reaction between the fluorocarbon contained in the deposit and the silicon containing material of the first region is promoted. Meanwhile, the second region R2 is protected by the deposit DP. Therefore, the in-plane uniformity in the processing for selectively etching the first region R1 of the substrate W with respect to the second region R2 of the substrate W can be improved.
- While various exemplary embodiments have been described above, various omissions, substitutions, and changes may be made without being limited to the above-described exemplary embodiments. Further, other exemplary embodiments can be implemented by combining elements in different exemplary embodiments.
- For example, in the method MT, another plasma processing apparatus may be used as long as it is capable of forming the magnetic field. Examples of the other plasma processing apparatus which is different from the
plasma processing apparatus 1 may include a capacitively coupled plasma processing apparatus, an inductively coupled plasma processing apparatus or a plasma processing apparatus, which forms plasma with a surface wave such as a micro wave. - From the foregoing, it will be appreciated that various exemplary embodiments of the present disclosure have been described herein for purposes of illustration and various changes can be made without departing from the scope and spirit of the present disclosure. Accordingly, various exemplary embodiments described herein are not intended to be limiting, and the true scope and spirit are indicated by the following claims.
- According to an exemplary embodiment, it is possible to improve the in-plane uniformity in a processing for selectively etching a first region of a substrate with respect to a second region of the substrate.
- The claims of the present application are different and possibly, at least in some aspects, broader in scope than the claims pursued in the parent application. To the extent any prior amendments or characterizations of the scope of any claim or cited document made during prosecution of the parent could be construed as a disclaimer of any subject matter supported by the present disclosure, Applicants hereby rescind and retract such disclaimer. Accordingly, the references previously presented in the parent applications may need to be revisited.
Claims (5)
1. A plasma processing apparatus, comprising:
a chamber;
a substrate supporting table, having a lower electrode, provided within the chamber;
a gas supply configured to supply a processing gas containing a fluorocarbon gas and a rare gas into the chamber;
a high frequency power supply configured to generate a high frequency power to excite a gas within the chamber;
an electromagnet configured to form a magnetic field within an interior space of the chamber;
a drive power supply configured to supply a current to the electromagnet; and
a controller configured to control the gas supply, the high frequency power supply and the drive power supply,
wherein the controller performs a first control of controlling the gas supply to supply the processing gas into the chamber and controlling the high frequency power supply to supply the high frequency power to form a deposit containing fluorocarbon from plasma formed from the processing gas on a substrate placed on the substrate supporting table while a magnetic field is not formed within the chamber by the electromagnet, and
the controller performs a second control of controlling the gas supply to supply the rare gas into the chamber, controlling the high frequency power supply to supply the high frequency power and controlling the drive power supply to form a magnetic field distribution in which a horizontal component on an edge side of the substrate is higher than a horizontal component on a center of the substrate by the electromagnet to supply rare gas ions to the substrate on which the deposit is formed.
2. The plasma processing apparatus of claim 1 ,
wherein the fluorocarbon gas contains a C4F8 gas and/or a C4F6 gas.
3. The plasma processing apparatus of claim 1 ,
wherein the controller is configured to alternately repeat the first control and the second control.
4. The plasma processing apparatus of claim 1 ,
wherein the substrate has a first region formed of a silicon containing material and a second region formed of a metal containing material, and
the silicon containing material is SiO2, SiOC or SiOCH.
5. The plasma processing apparatus of claim 1 ,
wherein the substrate has a first region formed of a silicon containing material and a second region formed of a metal containing material, and
the metal containing material is any one of metal materials of titanium, tungsten, zirconium, aluminum, tantalum, cobalt or ruthenium, or an oxide, a nitride or a carbide of the corresponding metal material.
Priority Applications (1)
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US18/659,116 US20240290625A1 (en) | 2018-08-21 | 2024-05-09 | Plasma processing apparatus |
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JP2018-154914 | 2018-08-21 | ||
JP2018154914A JP7198609B2 (en) | 2018-08-21 | 2018-08-21 | Etching method and plasma processing apparatus |
PCT/JP2019/031227 WO2020039943A1 (en) | 2018-08-21 | 2019-08-07 | Etching method and plasma processing device |
US202016979257A | 2020-09-09 | 2020-09-09 | |
US18/659,116 US20240290625A1 (en) | 2018-08-21 | 2024-05-09 | Plasma processing apparatus |
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US16/979,257 Division US12014930B2 (en) | 2018-08-21 | 2019-08-07 | Etching method and plasma processing apparatus |
PCT/JP2019/031227 Division WO2020039943A1 (en) | 2018-08-21 | 2019-08-07 | Etching method and plasma processing device |
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JP3343818B2 (en) * | 1991-08-23 | 2002-11-11 | 日本電信電話株式会社 | Ion etching method and apparatus |
JPH05267237A (en) * | 1992-03-23 | 1993-10-15 | Nippon Telegr & Teleph Corp <Ntt> | Plasma damage reduction and plasma processor |
JP2000082695A (en) | 1998-05-14 | 2000-03-21 | Sony Corp | Plasma etching method and semiconductor device |
JP4167542B2 (en) * | 2002-07-17 | 2008-10-15 | 積水化学工業株式会社 | Gas supply apparatus for plasma etching and plasma etching system and method |
JP4355157B2 (en) | 2003-03-31 | 2009-10-28 | 東京エレクトロン株式会社 | Plasma processing method, plasma processing apparatus, and magnetic field generator |
JP6008771B2 (en) * | 2013-01-21 | 2016-10-19 | 東京エレクトロン株式会社 | Method for etching a multilayer film |
JP6007143B2 (en) | 2013-03-26 | 2016-10-12 | 東京エレクトロン株式会社 | Shower head, plasma processing apparatus, and plasma processing method |
US9147581B2 (en) | 2013-07-11 | 2015-09-29 | Lam Research Corporation | Dual chamber plasma etcher with ion accelerator |
JP6396699B2 (en) | 2014-02-24 | 2018-09-26 | 東京エレクトロン株式会社 | Etching method |
JP6204869B2 (en) | 2014-04-09 | 2017-09-27 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing method |
JP2016136606A (en) | 2015-01-16 | 2016-07-28 | 東京エレクトロン株式会社 | Etching method |
JP6529357B2 (en) * | 2015-06-23 | 2019-06-12 | 東京エレクトロン株式会社 | Etching method |
JP6937644B2 (en) | 2017-09-26 | 2021-09-22 | 東京エレクトロン株式会社 | Plasma processing equipment and plasma processing method |
JP6836976B2 (en) | 2017-09-26 | 2021-03-03 | 東京エレクトロン株式会社 | Plasma processing equipment |
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KR20210035074A (en) | 2021-03-31 |
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US20210366718A1 (en) | 2021-11-25 |
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