CN101919022B - 活性膜的沉积 - Google Patents
活性膜的沉积 Download PDFInfo
- Publication number
- CN101919022B CN101919022B CN200880119476.XA CN200880119476A CN101919022B CN 101919022 B CN101919022 B CN 101919022B CN 200880119476 A CN200880119476 A CN 200880119476A CN 101919022 B CN101919022 B CN 101919022B
- Authority
- CN
- China
- Prior art keywords
- electrode
- segmentation
- layer
- electrodes
- plasma reactor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000008021 deposition Effects 0.000 title description 8
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 238000000034 method Methods 0.000 claims abstract description 26
- 230000011218 segmentation Effects 0.000 claims description 46
- 239000007787 solid Substances 0.000 claims description 5
- 238000009489 vacuum treatment Methods 0.000 abstract description 5
- 238000010276 construction Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 23
- 238000000151 deposition Methods 0.000 description 8
- 238000005452 bending Methods 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 230000000875 corresponding effect Effects 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 239000000729 antidote Substances 0.000 description 1
- 229940075522 antidotes Drugs 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 229910021425 protocrystalline silicon Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
Description
值×10-3 | 部分I | 部分II | 部分III |
中间梯度 | 6 | 32 | 4 |
范围从 | 3 | 18 | 2 |
到 | 13 | 44 | 6 |
Claims (7)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US97659307P | 2007-10-01 | 2007-10-01 | |
US60/976593 | 2007-10-01 | ||
US60/976,593 | 2007-10-01 | ||
PCT/CH2008/000385 WO2009043190A1 (en) | 2007-10-01 | 2008-09-16 | Deposition of active films |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101919022A CN101919022A (zh) | 2010-12-15 |
CN101919022B true CN101919022B (zh) | 2012-12-05 |
Family
ID=40140030
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200880119476.XA Expired - Fee Related CN101919022B (zh) | 2007-10-01 | 2008-09-16 | 活性膜的沉积 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8689734B2 (zh) |
EP (1) | EP2195820B1 (zh) |
JP (1) | JP5539884B2 (zh) |
KR (1) | KR101473510B1 (zh) |
CN (1) | CN101919022B (zh) |
TW (1) | TWI455653B (zh) |
WO (1) | WO2009043190A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101473510B1 (ko) * | 2007-10-01 | 2014-12-16 | 텔 쏠라 아게 | 필름 소재에의 증착 |
US20130340941A1 (en) * | 2012-06-20 | 2013-12-26 | Tel Solar Ag | Lens offset |
JP5798140B2 (ja) * | 2013-02-15 | 2015-10-21 | 株式会社東芝 | プラズマ処理装置 |
US20190244793A1 (en) * | 2018-02-05 | 2019-08-08 | Lam Research Corporation | Tapered upper electrode for uniformity control in plasma processing |
JP7308498B2 (ja) * | 2018-12-06 | 2023-07-14 | 東京エレクトロン株式会社 | プラズマ処理装置、及び、プラズマ処理方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001011658A1 (de) * | 1999-08-10 | 2001-02-15 | Unaxis Trading Ag | Plasmareaktor zur behandlung von grossflächigen substraten |
US20050276928A1 (en) * | 2003-02-03 | 2005-12-15 | Octec Inc. | Plasma processing apparatus, electrode plate for plasma processing apparatus, and electrode plate manufacturing method |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11317396A (ja) * | 1998-05-07 | 1999-11-16 | Sony Corp | エッチング装置 |
JP3595853B2 (ja) * | 1999-03-18 | 2004-12-02 | 日本エー・エス・エム株式会社 | プラズマcvd成膜装置 |
JP2001313286A (ja) * | 2000-02-24 | 2001-11-09 | Tokyo Electron Ltd | 平行平板型ドライエッチング装置 |
US7196283B2 (en) * | 2000-03-17 | 2007-03-27 | Applied Materials, Inc. | Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface |
JP2003051491A (ja) * | 2001-08-03 | 2003-02-21 | Mitsubishi Materials Corp | プラズマエッチング装置用電極板 |
KR101202151B1 (ko) * | 2003-09-10 | 2012-11-15 | 외를리콘 솔라 아게, 트뤼프바흐 | 직사각형 대면적 기판 처리용 고주파 플라즈마 반응기의전압 불균일성 보상 방법 |
KR101473510B1 (ko) * | 2007-10-01 | 2014-12-16 | 텔 쏠라 아게 | 필름 소재에의 증착 |
-
2008
- 2008-09-16 KR KR1020107007155A patent/KR101473510B1/ko active IP Right Grant
- 2008-09-16 JP JP2010527311A patent/JP5539884B2/ja not_active Expired - Fee Related
- 2008-09-16 US US12/680,239 patent/US8689734B2/en not_active Expired - Fee Related
- 2008-09-16 CN CN200880119476.XA patent/CN101919022B/zh not_active Expired - Fee Related
- 2008-09-16 WO PCT/CH2008/000385 patent/WO2009043190A1/en active Application Filing
- 2008-09-16 EP EP08783485.9A patent/EP2195820B1/en not_active Not-in-force
- 2008-09-24 TW TW097136595A patent/TWI455653B/zh not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001011658A1 (de) * | 1999-08-10 | 2001-02-15 | Unaxis Trading Ag | Plasmareaktor zur behandlung von grossflächigen substraten |
US20050276928A1 (en) * | 2003-02-03 | 2005-12-15 | Octec Inc. | Plasma processing apparatus, electrode plate for plasma processing apparatus, and electrode plate manufacturing method |
Also Published As
Publication number | Publication date |
---|---|
CN101919022A (zh) | 2010-12-15 |
KR101473510B1 (ko) | 2014-12-16 |
EP2195820B1 (en) | 2014-12-31 |
KR20100069661A (ko) | 2010-06-24 |
JP5539884B2 (ja) | 2014-07-02 |
US20110162582A1 (en) | 2011-07-07 |
WO2009043190A1 (en) | 2009-04-09 |
TWI455653B (zh) | 2014-10-01 |
TW201031282A (en) | 2010-08-16 |
EP2195820A1 (en) | 2010-06-16 |
JP2010541170A (ja) | 2010-12-24 |
US8689734B2 (en) | 2014-04-08 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: OERLIKON SOLAR AG (TRUBBACH) Free format text: FORMER OWNER: OERLIKON SOLAR IP AG (TRUBBACH) Effective date: 20110422 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20110422 Address after: Swiss Te Lui Bach Applicant after: OERLIKON SOLAR AG, TRuBBACH Address before: Swiss Te Lui Bach Applicant before: OERLIKON SOLAR IP AG, TRuBBACH |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder |
Address after: Swiss Te Lui Bach Patentee after: OERLIKON SOLAR AG, TRuBBACH Address before: Swiss Te Lui Bach Patentee before: OERLIKON SOLAR AG, TRuBBACH |
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CP01 | Change in the name or title of a patent holder | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200302 Address after: Swiss Te Lui Bach Patentee after: EVATEC AG Address before: Swiss Te Lui Bach Patentee before: OERLIKON SOLAR AG, TRuBBACH |
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TR01 | Transfer of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121205 Termination date: 20200916 |
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CF01 | Termination of patent right due to non-payment of annual fee |