JP7083080B2 - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
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- JP7083080B2 JP7083080B2 JP2018002311A JP2018002311A JP7083080B2 JP 7083080 B2 JP7083080 B2 JP 7083080B2 JP 2018002311 A JP2018002311 A JP 2018002311A JP 2018002311 A JP2018002311 A JP 2018002311A JP 7083080 B2 JP7083080 B2 JP 7083080B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/01—Selective coating, e.g. pattern coating, without pre-treatment of the material to be coated
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/02—Pretreatment of the material to be coated, e.g. for coating on selected surface areas
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
- C23C4/11—Oxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
Description
また、試料台2の載置面上には半導体ウエハ等の基板状の試料3が載せられて保持される。
当該隙間は、真空容器10外部のガス導入ライン6及び上部電極4内に施されたガス流路に連結され、これらが処理室内へのガスの供給経路として連通されている。
本実施例において、処理室内に供給される試料3の処理に用いられる処理用のガス、或いは処理には直接的には用いられないものの処理用のガスを希釈する或いは処理用のガスが供給されない間に処理室内部に供給されて処理用のガスと入れ替えられる不活性ガスは、ガス導入ライン6から上部電極4内に施されたガス流路を介して当該隙間に供給されその内部で分散された後、シャワープレート5の中央部を含むに領域に配置された複数の貫通孔を通り処理室内部に供給される。
上部電極用冷媒流路7の内部を冷媒が循環しつつ熱交換することによって上部電極4の温度が処理に適切な値の範囲内に調節される。
シャワープレート5は、上面形が円板の形状を有した石英等の誘電体あるいはシリコン等の半導体製の部材である。上部電極4に高周波電力が印加された結果、上部電極4の表面から放出される電界がシャワープレート5の表面に電界が形成あるいはシャワープレート5を透過して処理室内に電界が放出される。さらに、本実施例では、真空容器10の外部であって処理室の上部の上方と側方とを囲んで配置された電磁コイル1が形成する磁界が処理室内部に供給される。
本実施例の直流電源17及びバイアス用高周波電源20は、その一端側の端子は接地されるかアースに電気的に接続されている。
これらのうち一方と他方とには、各々で異なる極性を有するように直流電圧が供給され、両極性の静電吸着を行うものとなっている。このため、静電吸着膜14と試料3との接触面の面積を2等分されたか又はこれと見做せる程度に近似した範囲内の値で電極15が2つ領域に分けられて配置され、各々に独立した値の直流電力が供給されて、異なる値の電圧に維持される。
絶縁板22が配置されることで、接地されるかアースと電気的に接続され接地電位にされた基材2aが下方の部材から絶縁されている。
2…試料台、
3…試料、
4…上部電極、
5…シャワープレート、
6…ガス導入ライン、
7…上部電極用冷媒流路、
8…放電用高周波電源、
9…放電用高周波電力整合器、
10…真空容器、
11…プラズマ、
12…上部電極絶縁体、
13…絶縁リング、
14…静電吸着膜、
15…電極、
16…低域通過フィルタ、
17…直流電源、
18…ヘリウム供給手段、
19…冷媒流路、
20…バイアス用高周波電源、
21…バイアス用高周波電力整合器、
22…絶縁板、
23…絶縁層、
24…遮蔽板、
25…サセプタリング、
26…圧力調整バルブ、
27…給電経路、
29…導体板、
30…ガス通過孔、
31…コンデンサ、
32…素子。
201…静電チャック、
202…吸着板、
204…接着層、
205…押上げピン孔、
206…表面膜、
207…熱伝達ガス孔、
301…非接触面、
302…シール部、
303…非被覆部、
304…ドット部、
305…外周凸部、
306…内側凸部。
Claims (7)
- 真空容器内部の処理室内に配置された試料台上に載せられて保持された処理対象の試料が当該処理室内に形成されたプラズマを用いて処理されるプラズマ処理装置であって、
前記試料台上部に配置され前記試料が載せられる上面を構成する第1の誘電体製の板状の部材がその上面に、外周縁に沿って当該上面の中央側部分を囲んでリング状に配置された外周凸部とこの外周凸部の中央側の前記板状部材の上面に配置されその頂部上面上に前記試料が載せられる複数の柱状の突起部と、前記外周凸部の中央側の前記板状部材の上面であって前記突起部の前記頂部上面及び当該頂部上面の外周縁に連なる側壁面を除く板状部材の上面を覆う第2の誘電体製の膜とを備え、
前記外周凸部の上面を覆って前記第2の誘電体製の膜が配置され、当該外周側凸部上に配置された第2の誘電体製の膜上面と複数の前記突起部の頂部上面の上に前記試料が載せられて保持されるプラズマ処理装置。
- 請求項1に記載のプラズマ処理装置であって、
前記外周凸部の中央側に配置された前記第2の誘電体製の膜の上面と当該試料との間に隙間をあけて前記試料が前記突起部上に載せられて前記試料台上に保持されるプラズマ処理装置。
- 請求項1又は2に記載のプラズマ処理装置であって、
前記第2の誘電体製の膜が前記突起部の前記側壁面の下端を含む当該突起部の周囲の前記板状部材の上面を除いた前記板状部材の上面を覆って配置されたプラズマ処理装置。
- 請求項1乃至3の何れかに記載のプラズマ処理装置であって、
前記突起部の高さが20μm以下であり頂部上面の径が2mm以下であるプラズマ処理装置。
- 請求項1乃至4の何れかに記載のプラズマ処理装置であって、
前記第2の誘電体膜の厚さが2μm以上10μm以下であるプラズマ処理装置。
- 請求項1乃至5の何れかに記載のプラズマ処理装置であって、
前記板状部材の上面の前記第2の誘電体製の膜に覆われた部分の面積の当該上面全体の面積に対する割合が90%以上であるプラズマ処理装置。
- 請求項1乃至6の何れかに記載のプラズマ処理装置であって、
前記第1の誘電体が酸化アルミニウムを含み、第2の誘電体が酸化イットリウムを含むプラズマ処理装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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JP2018002311A JP7083080B2 (ja) | 2018-01-11 | 2018-01-11 | プラズマ処理装置 |
KR1020180092213A KR102106382B1 (ko) | 2018-01-11 | 2018-08-08 | 플라스마 처리 장치 |
US16/113,913 US20190214235A1 (en) | 2018-01-11 | 2018-08-27 | Plasma processing apparatus |
TW107130240A TWI717631B (zh) | 2018-01-11 | 2018-08-30 | 電漿處理裝置 |
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JP2018002311A JP7083080B2 (ja) | 2018-01-11 | 2018-01-11 | プラズマ処理装置 |
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JP2019121748A JP2019121748A (ja) | 2019-07-22 |
JP7083080B2 true JP7083080B2 (ja) | 2022-06-10 |
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US (1) | US20190214235A1 (ja) |
JP (1) | JP7083080B2 (ja) |
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TW (1) | TWI717631B (ja) |
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US11133212B2 (en) * | 2018-05-16 | 2021-09-28 | Applied Materials, Inc. | High temperature electrostatic chuck |
CN113725059A (zh) * | 2020-05-26 | 2021-11-30 | 中微半导体设备(上海)股份有限公司 | 一种下电极组件,其安装方法及等离子体处理装置 |
JP7450512B2 (ja) | 2020-10-07 | 2024-03-15 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
CN116156784B (zh) * | 2023-04-25 | 2023-07-04 | 四川托璞勒科技有限公司 | 一种pcb棕化处理装置 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001160586A (ja) | 2000-09-11 | 2001-06-12 | Hitachi Ltd | 基板保持装置 |
JP2004022888A (ja) | 2002-06-18 | 2004-01-22 | Anelva Corp | 静電吸着装置 |
WO2004103714A1 (ja) | 2003-05-21 | 2004-12-02 | Sharp Kabushiki Kaisha | 画像用装置 |
JP2006049357A (ja) | 2004-07-30 | 2006-02-16 | Toto Ltd | 静電チャックおよび静電チャックを搭載した装置 |
JP2010165805A (ja) | 2009-01-14 | 2010-07-29 | Toto Ltd | 静電チャックおよび静電チャックの製造方法 |
JP2010267708A (ja) | 2009-05-13 | 2010-11-25 | Hitachi High-Technologies Corp | 真空処理装置および真空処理方法 |
JP2013251353A (ja) | 2012-05-31 | 2013-12-12 | Kyocera Corp | 静電チャック、吸着方法及び吸着装置 |
JP2015162490A (ja) | 2014-02-26 | 2015-09-07 | 東京エレクトロン株式会社 | 静電チャック、載置台、プラズマ処理装置、及び、静電チャックの製造方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB8707925D0 (en) * | 1987-04-02 | 1987-05-07 | Gaslow Int Ltd | Gas quantity measuring device |
JPH06326175A (ja) * | 1993-04-22 | 1994-11-25 | Applied Materials Inc | 集積回路処理装置において使用されるウエハサポートの誘電材への保護被覆とその形成方法 |
JP3445313B2 (ja) * | 1993-04-22 | 2003-09-08 | オリンパス光学工業株式会社 | 光情報再生方法 |
US5656093A (en) * | 1996-03-08 | 1997-08-12 | Applied Materials, Inc. | Wafer spacing mask for a substrate support chuck and method of fabricating same |
US5841624A (en) * | 1997-06-09 | 1998-11-24 | Applied Materials, Inc. | Cover layer for a substrate support chuck and method of fabricating same |
KR100511854B1 (ko) * | 2002-06-18 | 2005-09-02 | 아네르바 가부시키가이샤 | 정전 흡착 장치 |
JP4472372B2 (ja) * | 2003-02-03 | 2010-06-02 | 株式会社オクテック | プラズマ処理装置及びプラズマ処理装置用の電極板 |
JP5279455B2 (ja) * | 2008-11-10 | 2013-09-04 | 太平洋セメント株式会社 | 静電チャック |
KR101762752B1 (ko) * | 2012-01-26 | 2017-07-28 | 쿄세라 코포레이션 | 정전 척 |
WO2014103714A1 (ja) * | 2012-12-25 | 2014-07-03 | 京セラ株式会社 | 吸着部材およびそれを用いた吸着装置 |
JP6139698B2 (ja) * | 2013-11-22 | 2017-05-31 | 京セラ株式会社 | 静電チャック |
JP6877133B2 (ja) * | 2016-03-28 | 2021-05-26 | 株式会社日立ハイテク | プラズマ処理装置およびプラズマ処理方法 |
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2018
- 2018-01-11 JP JP2018002311A patent/JP7083080B2/ja active Active
- 2018-08-08 KR KR1020180092213A patent/KR102106382B1/ko active IP Right Grant
- 2018-08-27 US US16/113,913 patent/US20190214235A1/en not_active Abandoned
- 2018-08-30 TW TW107130240A patent/TWI717631B/zh active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001160586A (ja) | 2000-09-11 | 2001-06-12 | Hitachi Ltd | 基板保持装置 |
JP2004022888A (ja) | 2002-06-18 | 2004-01-22 | Anelva Corp | 静電吸着装置 |
WO2004103714A1 (ja) | 2003-05-21 | 2004-12-02 | Sharp Kabushiki Kaisha | 画像用装置 |
JP2006049357A (ja) | 2004-07-30 | 2006-02-16 | Toto Ltd | 静電チャックおよび静電チャックを搭載した装置 |
JP2010165805A (ja) | 2009-01-14 | 2010-07-29 | Toto Ltd | 静電チャックおよび静電チャックの製造方法 |
JP2010267708A (ja) | 2009-05-13 | 2010-11-25 | Hitachi High-Technologies Corp | 真空処理装置および真空処理方法 |
JP2013251353A (ja) | 2012-05-31 | 2013-12-12 | Kyocera Corp | 静電チャック、吸着方法及び吸着装置 |
JP2015162490A (ja) | 2014-02-26 | 2015-09-07 | 東京エレクトロン株式会社 | 静電チャック、載置台、プラズマ処理装置、及び、静電チャックの製造方法 |
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TWI717631B (zh) | 2021-02-01 |
US20190214235A1 (en) | 2019-07-11 |
TW201931424A (zh) | 2019-08-01 |
JP2019121748A (ja) | 2019-07-22 |
KR102106382B1 (ko) | 2020-05-06 |
KR20190085825A (ko) | 2019-07-19 |
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