US20090321364A1 - Systems and methods for filtering nanowires - Google Patents

Systems and methods for filtering nanowires Download PDF

Info

Publication number
US20090321364A1
US20090321364A1 US12/105,525 US10552508A US2009321364A1 US 20090321364 A1 US20090321364 A1 US 20090321364A1 US 10552508 A US10552508 A US 10552508A US 2009321364 A1 US2009321364 A1 US 2009321364A1
Authority
US
United States
Prior art keywords
nanowire
solution
passage
filter
flow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US12/105,525
Other languages
English (en)
Inventor
Michael A. Spaid
Manfred Heidecker
Pierre-Marc Allemand
Frank Wallace
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cambrios Technologies Corp
Cambrios Film Solutions Corp
Original Assignee
Cambrios Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=39620244&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=US20090321364(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Cambrios Technologies Corp filed Critical Cambrios Technologies Corp
Priority to US12/105,525 priority Critical patent/US20090321364A1/en
Assigned to CAMBRIOS TECHNOLOGIES CORPORATION reassignment CAMBRIOS TECHNOLOGIES CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SPAID, MICHAEL A., ALLEMAND, PIERRE-MARC, HEIDECKER, MANFRED, WALLACE, FRANK
Publication of US20090321364A1 publication Critical patent/US20090321364A1/en
Assigned to CAM HOLDING CORPORATION reassignment CAM HOLDING CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHAMP GREAT INTERNATIONAL CORPORATION
Abandoned legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00Non-insulated conductors or conductive bodies characterised by their form
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/24Reinforcing the conductive pattern
    • H05K3/245Reinforcing conductive patterns made by printing techniques or by other techniques for applying conductive pastes, inks or powders; Reinforcing other conductive patterns by such techniques
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/413Nanosized electrodes, e.g. nanowire electrodes comprising one or a plurality of nanowires
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884Manufacture of transparent electrodes, e.g. TCO, ITO
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/24Reinforcing the conductive pattern
    • H05K3/245Reinforcing conductive patterns made by printing techniques or by other techniques for applying conductive pastes, inks or powders; Reinforcing other conductive patterns by such techniques
    • H05K3/247Finish coating of conductors by using conductive pastes, inks or powders
    • H05K3/249Finish coating of conductors by using conductive pastes, inks or powders comprising carbon particles as main constituent
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/13439Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669Nanowires or nanotubes
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092Dispersed materials, e.g. conductive pastes or inks
    • H05K1/097Inks comprising nanoparticles and specially adapted for being sintered at low temperature
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01Dielectrics
    • H05K2201/0104Properties and characteristics in general
    • H05K2201/0108Transparent
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203Fillers and particles
    • H05K2201/0242Shape of an individual particle
    • H05K2201/026Nanotubes or nanowires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • H10K50/81Anodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221Carbon nanotubes
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Definitions

  • This description generally relates to the field of nanowire manufacturing, and more particularly to filtering solutions containing nanowires.
  • Conductive and non-conductive nanowires may be used in a variety of applications. These high aspect ratio nano-structures may be used to form transparent conductors, similar to those manufactured currently using indium tin oxide (ITO). They may prove useful in quantum computing, sensing applications, flexible electronics and integration with biotechnology. In addition, they may someday be used to create high speed, high density microprocessors.
  • ITO indium tin oxide
  • a method of filtering a solution containing nanowires and a first set of contaminant particles comprises: providing the solution; generating a flow of the solution; and filtering the solution by directing the flow through a passage defining an aperture having a width less than at least one dimension of the first set of contaminant particles.
  • a nanowire filtering system comprises: a source container for holding a solution containing nanowires and a first set of contaminant particles; and a nanowire filter passage communicatively coupled to the source container for receiving the solution, the nanowire filter passage defined at least in part by: a first plate; and a second plate disposed adjacent the first plate with a minimum separation distance between the first plate and the second plate of less than at least one dimension of the first set of contaminant particles.
  • a method of filtering a solution containing nanowires comprises: providing the solution; generating a primary flow of the solution; and filtering the solution by directing the primary flow over a micro-structured surface configured to filter the solution.
  • a nanowire filtering system comprises: a source container for holding a solution containing nanowires; and a nanowire filter communicatively coupled to the source container for receiving the solution, the nanowire filter including: a rotatable tube defining a passage for the solution; a micro-structured surface lining an inside of the rotatable tube; a substantially helical surface adjacent the micro-structured surface and extending at least partially into the passage; and a drive member adapted to turn the rotatable tube.
  • a nanowire filtering system comprises: a source container for holding a solution containing nanowires; and a nanowire filter communicatively coupled to the source container for receiving the solution, the nanowire filter including: an elongate channel defining a passage for the solution flowing along a long axis, the elongate channel having a lower surface including a plurality of parallel ridges disposed at an angle to the long axis; wherein the plurality of parallel ridges at least partially define a plurality of openings from the elongate channel.
  • a nanowire filtering system comprises: a source container for holding a solution containing nanowires; and a nanowire filter communicatively coupled to the source container for receiving the solution, the nanowire filter including: an elongate channel defining a passage for the solution; and a collection chamber defined in part by an outer surface of the elongate channel, the collection chamber communicatively coupled to the elongate channel via a plurality of openings having an average diameter of greater than 5 ⁇ m.
  • FIG. 1 is a schematic diagram of a nanowire filtering system, according to one illustrated embodiment.
  • FIG. 2 is a schematic diagram of another nanowire filtering system, according to another illustrated embodiment.
  • FIG. 3 is a perspective view of an example micro-structured nanowire filter, according to one illustrated embodiment.
  • FIG. 4 is a longitudinal cross-section of the nanowire filter of FIG. 3 .
  • FIG. 5 is radial cross-section of the nanowire filter of FIG. 3 .
  • FIG. 6 is a perspective view of another example micro-structured nanowire filter, according to one illustrated embodiment.
  • FIG. 7 is a bottom view of the nanowire filter of FIG. 6 .
  • FIG. 8 is a perspective view of another example micro-structured nanowire filter, according to one illustrated embodiment.
  • FIG. 9 is a front view of the nanowire filter of FIG. 8 .
  • FIG. 10 illustrates schematically nanowires and other nano-particles flowing in a solution over the nanowire filter of FIG. 8 .
  • FIG. 11 is a perspective view of another example micro-structured nanowire filter, according to one illustrated embodiment, with inner portions of the nanowire filter shown in dashed lines.
  • FIG. 12 is a radial cross-section of the nanowire filter of FIG. 11 .
  • FIG. 13 is a longitudinal cross-section of the nanowire filter of FIG. 11 .
  • FIG. 14 is a perspective view of another example micro-structured nanowire filter, according to one illustrated embodiment.
  • FIG. 15 is a top view of the nanowire filter of FIG. 14 .
  • FIG. 16 is an enlarged, schematic view of a bottom surface of the nanowire filter of FIG. 14 in operation.
  • FIG. 17 is a perspective view of an example nanowire filter having a narrow aperture, according to one illustrated embodiment.
  • FIG. 18 is a cross-section of the nanowire filter of FIG. 17 .
  • FIG. 19 illustrates schematically nanowires and other particles flowing in a solution through the nanowire filter of FIG. 17 .
  • FIG. 20 is a perspective view of an example micro-structured nanowire filter having a narrow aperture, according to one illustrated embodiment.
  • FIG. 21 is a bottom view of the nanowire filter of FIG. 20 .
  • FIG. 22 is a perspective view of another example nanowire filter having a narrow aperture, according to one illustrated embodiment.
  • FIG. 23 is a cross-sectional, schematic view of the nanowire filter of FIG. 22 in operation.
  • FIG. 24 is a top view of the nanowire filter of FIG. 22 .
  • FIG. 25 is a perspective view of another example nanowire filter having a narrow aperture, according to one illustrated embodiment.
  • FIG. 26 is a side view of the nanowire filter of FIG. 25 .
  • FIG. 27 is a perspective view of another example nanowire filter having a narrow aperture, according to one illustrated embodiment.
  • FIG. 28 is a side view of the nanowire filter of FIG. 27 .
  • FIG. 29 is a perspective view of another example nanowire filter having a plurality of narrow apertures, according to one illustrated embodiment.
  • FIG. 30 is a side view of the nanowire filter of FIG. 29 .
  • FIG. 31 is a flow diagram illustrating a method of filtering a solution containing nanowires using a micro-structured nanowire filter, according to one illustrated embodiment
  • FIG. 32 is a flow diagram illustrating another method of filtering a solution containing nanowires using a nanowire filter having a narrow aperture, according to another illustrated embodiment.
  • FIG. 1 illustrates an exemplary nanowire filtering system 10 .
  • the nanowire filtering system 10 comprises a source container 12 , a pump 14 and a nanowire filter 16 .
  • the components of the nanowire filtering system 10 function together to filter a solution containing nanowires, removing undesirable contaminant particles and/or solvent from the solution to achieve a more uniform solution of high aspect ratio nanowires.
  • the source container 12 may comprise any of a variety of containers for holding a solution containing nanowires.
  • the source container 12 may comprise a stainless steel or glass vessel, within which the nanowires were formed.
  • the source container 12 may simply comprise tubing through which the solution containing nanowires may travel.
  • the solution containing nanowires within the source container 12 may comprise any liquid carrying nanowires.
  • the solution containing the nanowires may come directly from a synthesis reaction prior to any formulation.
  • the solution containing nanowires may include, by weight, from 0.0025% to 0.1% surfactant (e.g., a preferred range is from 0.0025% to 0.05% of ZONYL® FSO-100), from 0.02% to 4% viscosity modifier (e.g., a preferred range is 0.02% to 0.5% of hydroxypropyl methyl cellulose (“HPMC”)), from 94.5% to 99.0% solvent and from 0.05% to 1.4% nanowires.
  • surfactant e.g., a preferred range is from 0.0025% to 0.05% of ZONYL® FSO-100
  • 0.02% to 4% viscosity modifier e.g., a preferred range is 0.02% to 0.5% of hydroxypropyl methyl cellulose (“HPMC”)
  • HPMC hydroxyprop
  • Suitable surfactants include ZONYL® FSN, ZONYL® FSO, ZONYL® FSH, TRITON® (x100, x114, x45), DYNOLTM (604, 607), n-Dodecyl b-D-maltoside and Novek.
  • suitable viscosity modifiers include HPMC, methyl cellulose, xanthan gum, polyvinyl alcohol, carboxy methyl cellulose, and hydroxy ethyl cellulose.
  • suitable solvents include water, alcohol (e.g., isopropanol), ketones, ether, or hydrocarbon or aromatic solvents (e.g., benzene, toluene or xylene).
  • the solvent may be volatile, having a boiling point of no more than 200° C., no more than 150° C., or no more than 100° C.
  • the amount of solvent can be adjusted to provide a desired viscosity and concentration of nanowires in the solution.
  • different pumps 14 and different nanowire filters 16 may function optimally on different concentration solutions.
  • the relative ratios of the other ingredients may remain the same.
  • the ratio of the surfactant to the viscosity modifier may be kept in the range of about 80 to about 0.01; the ratio of the viscosity modifier to the nanowires may remain in the range of about 5 to about 0.000625; and the ratio of the nanowires to the surfactant may be in the range of about 560 to about 5.
  • the viscosity range for the nanowire solution may be from 1 to 100 cP.
  • a number of contaminant particles and other structures may also be present in the solution, including low aspect ratio nano-particles (e.g., short rods, discs or spheres) made from the same material as the nanowires, as well as synthesis catalysts, reaction byproducts and unreacted precursors. For many applications, the presence of such contaminant particles may be undesirable.
  • low aspect ratio nano-particles e.g., short rods, discs or spheres
  • synthesis catalysts e.g., reaction byproducts and unreacted precursors.
  • nanowire refers generally to a nano-structure having a high aspect ratio (e.g., higher than 10).
  • non-metallic nanowires include, but are not limited to, carbon nanotubes (CNTs), metal oxide nanowires, conductive polymer fibers and the like.
  • Metallic nanowires may comprise elemental metals, metal alloys or metal compounds. Suitable metal nanowires can be based on any metal or combinations and/or alloys of metals, including without limitation, silver, gold, copper, nickel, gold-plated silver, gold-silver alloys, platinum, and palladium.
  • At least one cross-sectional dimension of a nanowire is less than 500 nm. In another embodiment, at least one cross-sectional dimension of a nanowire is less than 200 nm, and in yet another embodiment, at least one cross-sectional dimension is less than 100 nm.
  • the nanowire may have an aspect ratio (length:diameter) of greater than 10. In another embodiment, the aspect ratio may be greater than 50. In yet another embodiment, the aspect ratio may be greater than 100. Nanowires may have aspect ratios anywhere in the range of 10 to 100,000.
  • the nanowires can be prepared by any of a number of methods.
  • large-scale production of silver nanowires of uniform size may be carried out according to the methods described in, e.g., Xia, Y. et al., Chem. Mater . (2002), vol. 14, 4736-4745, and Xia, Y. et al., Nanoletters (2003) vol. 3(7), 955-960, the contents of which are hereby incorporated herein by reference in their entirety.
  • silver nanowires may be synthesized in a batch process by the reduction of silver nitrate in propylene glycol.
  • the chemistry of such a process is described in co-pending U.S. patent application Ser. No. 11/766,552, titled METHODS OF CONTROLLING NANOSTRUCTURE FORMATIONS AND SHAPES, filed Jun. 21, 2007, the contents of which are hereby incorporated herein by reference in their entirely.
  • Nanowire formation may be accomplished by the use of a surface active polymer (e.g., polyvinylpyrrolidone (“PVP”)) and chloride (e.g., added in the form of tetra-n-butylammonium chloride (“TBAC”)).
  • PVP polyvinylpyrrolidone
  • TBAC tetra-n-butylammonium chloride
  • the process may be carried out in an agitated, jacketed glass reactor including glass impellers, an automated temperature controller, a small glass feed vessel (which may also be agitated), and a precision metering pump.
  • Propylene glycol, PVP, and TBAC may first be added to the reactor and heated to a target temperature (e.g., 100° C.) under agitation. Meanwhile, a solution of silver nitrate and propylene glycol may be prepared in the small glass feed vessel. Once the silver nitrate is fully dissolved, and the reactor has stabilized at the target temperature, the silver n
  • the solution may then react under agitation at atmospheric pressure. As the reaction progresses, nano-particles may form first, followed by nanowires that grow to the desired length and width. Nano-particles may be indicated by an orange-brown or brown-green color, and, as nanowires form, the mixture may become increasingly grey and metallic in appearance.
  • the reaction may be quenched by the rapid addition of water, which both cools the reaction mixture and inhibits further reaction. Reaction temperature, reaction time, and silver nitrate addition rate may be varied to control the dimensions of the resulting nanowires.
  • the reactor may be cleaned using a clean-in-place system consisting of a spray ball and a persistaltic pump. Residue from previous reactions may have adverse effects on the synthesis process.
  • Propylene glycol was first added to a 30 L glass reactor. PVP and TBAC were also added to the glass reactor. The agitator for the glass reactor was turned to 100 rpm, and the solution in the glass reactor was heated to 100° C. While the solution was heating, propylene glycol and silver nitrate were premixed in a 4 L glass feed vessel until all of the solids were dissolved. Once the solution in the reactor reached a stable 100° C., the propylene glycol/silver nitrate solution were added to the reactor via a metering pump. 900 mL of propylene glycol and silver nitrate were added to the reactor at an addition rate of 45 mL/min for 20 minutes. Starting a timer at the start of the silver nitrate addition, the solution was mixed for 4 hours in the reactor before the heating was turned off and the reaction quenched with deionized water.
  • the average length of the resulting silver nanowires was 24 ⁇ m with a standard deviation of 15 ⁇ m.
  • the average width of the resulting silver nanowires was 65 nm with a standard deviation of 14 nm.
  • the estimated yield of silver converted into silver nanowires was 50 wt %.
  • nanowires may be prepared using biological templates (or biological scaffolds) that can be mineralized.
  • biological materials such as viruses and phages can function as templates to create metal nanowires.
  • the biological templates can be engineered to exhibit selective affinity for a particular type of material, such as a metal or a metal oxide. More detailed descriptions of biofabrication of nanowires can be found in, e.g., Mao, C. B. et al., “Virus-Based Toolkit for the Directed Synthesis of Magnetic and Semiconducting Nanowires,” (2004) Science, 303, 213-217; Mao, C. B. et al., “Viral Assembly of Oriented Quantum Dot Nanowires,” (2003) PNAS , vol. 100, no. 12, 6946-6951; U.S. patent application Ser. No. 10/976,179 and U.S. provisional patent application Ser. No. 60/680,491, all of which are hereby incorporated herein by reference in their entireties.
  • the resulting solution may be a polydisperse solution containing a mixture of contaminant particles and nanowires of various shapes and sizes.
  • purification may be desirable in order to achieve a more uniform solution of high aspect ratio nanowires.
  • solubilized ion contaminants e.g., Cl ⁇ , Ag+, NO 3 ⁇
  • exchange of the solvent may be desirable based on the particular application for the nanowire solution.
  • the source container 12 may serve as the reactor within which the nanowires are formed.
  • a solution containing nanowires may be generated in another container/reactor and be subsequently transferred to the source container 12 .
  • the solution containing nanowires need not comprise the solution within which the nanowires were originally formed.
  • the nanowire filtering system 10 may be used to filter any solution containing nanowires.
  • the nanowire filtering system 10 may include a pump 14 to generate a flow of the solution containing nanowires from the source container 12 to the nanowire filter 16 .
  • the pump 14 may comprise any of a variety of liquid pumps.
  • the pump 14 may comprise a bellows pump, a centrifugal pump, a diaphragm pump, a drum pump, a flexible liner/impeller pump, a gear pump, a peristaltic pump, a piston pump, a progressing cavity pump, a rotary lobe pump, a rotary vane pump, etc.
  • the nanowire filtering system 10 may not include a pump.
  • a flow of the solution containing nanowires may be generated by gravity.
  • the pump 14 may be incorporated into the nanowire filter 16 .
  • the nanowire filter 16 may comprise any of a variety of filters configured to separate nanowires from contaminant particles and other nano-structures.
  • the nanowire filter 16 may be further configured to separate the nanowires from a solvent in order to facilitate a solvent exchange.
  • the nanowire filter 16 may be configured to yield a retentate 18 , which comprises a more uniform solution containing nanowires, and a filtrate (not shown), which may comprise solvent and/or the contaminant particles filtered from the solution.
  • the retentate 18 may have a higher weight percentage of nanowires than the flow of solution 20 entering the nanowire filter 16 . As discussed below with reference to FIGS.
  • the nanowire filter 16 may include a plurality of micro-structures and/or may include one or more narrow apertures configured to filter the solution.
  • the nanowire filter 16 may also, in some embodiments, comprise a plurality of nanowire filters arranged in parallel or in series to filter the solution containing nanowires.
  • the nanowire filter 16 may filter out nanowires having aspect ratios below a certain threshold.
  • the nanowire filter 16 may generally filter out nanowires having aspect ratios lower than 100.
  • the aspect ratio targeted by a particular nanowire filter 16 may be selected based upon an application for the solution.
  • the retentate 18 may be collected in a container (not shown) for subsequent processing or use.
  • the retentate 18 may be added to a solvent useful in coating formulations.
  • a nanowire filtering system 22 may recirculate the retentate 18 from the nanowire filter 16 back to the source container 12 for further filtering. In such an embodiment, the filtering and subsequent recirculating of the solution containing nanowires may continue for a predetermined time period, or until the solution containing nanowires has reached a desired purity.
  • solvent may also be added to the nanowire filtering system 22 (e.g., at the source container 12 ) as the retentate 18 is recirculated.
  • the filtering, recirculating, and addition of a new solvent may continue until the solution containing nanowires achieves a predetermined concentration of the new solvent.
  • FIG. 3 is a perspective view of a micro-structured nanowire filter 300 , which may be used in the nanowire filtering system 10 or the nanowire filtering system 22 .
  • FIGS. 4 and 5 present longitudinal and radial cross-sections, respectively, of the nanowire filter 300 to facilitate an understanding of its inner structure.
  • the nanowire filter 300 comprises an elongate channel 302 having an entrance 308 and an exit 310 and defining a passage for a primary flow (designated by the arrow 301 ) of the solution containing nanowires.
  • the elongate channel 302 may include a micro-structured surface between the entrance 308 and exit 310 having a plurality of openings 306 defined therethrough.
  • the elongate channel 302 is surrounded by a plurality of collection chambers 304 communicatively coupled to the elongate channel 302 by the plurality of openings 306 .
  • the nanowire filter 300 may, of course, be formed from a variety of different materials, including metallic and non-metallic materials, and may be coupled to the rest of the nanowire filtering system 10 by any of a variety of fluid connectors, tubes and/or conduits.
  • micro-structures configured to filter the solution.
  • the terms micro-structures and micro-structured may reference any small structures formed in, on or through a surface that may interfere with a fluid flow.
  • micro-structures may refer to structures having at least one dimension less than 1 cm.
  • the micro-structures comprise the plurality of openings 306 .
  • micro-structures may comprise a plurality of niches, valleys, detents, peaks, protrusions, etc.
  • Other examples of micro-structures and micro-structured surfaces are presented with reference to FIGS. 6-16 .
  • the size, arrangement and configuration of the openings 306 may be varied to filter different contaminant particles.
  • the size of the openings 306 may be chosen based at least in part on the desired length/diameter/aspect ratio of the nanowires, the size/aspect ratio of the contaminant particles that should be filtered from the solution as well as a viscosity and flow rate of the solvent.
  • the openings 306 may have an average diameter greater than 5 ⁇ m because the expected filtrate may have a diameter up to approximately 5 ⁇ m. In another embodiment, the openings 306 may have an average diameter greater than 10 ⁇ m.
  • the nanowire filter 300 may filter out more contaminant particles and solvent on each pass. However, with larger openings 306 , the nanowire filter 300 may also become less selective, and more nanowires may be lost in the filtrate.
  • the elongate channel 302 may be approximately 3 cm in diameter, and approximately 50 cm long. In other embodiments, the length and diameter of the elongate channel 302 may be varied. As the elongate channel 302 is lengthened or its diameter made smaller, a greater amount of filtrate may be separated from the primary flow of solution as the solution passes through the nanowire filter 300 . However, a greater quantity of nanowires may also be lost in the filtrate. The length, diameter and geometry of the elongate channel 302 may therefore be varied to achieve desired characteristics for the nanowire filter 300 .
  • the elongate channel 302 may comprise a cylindrical passage, and the openings 306 may extend along the entire surface of this cylindrical passage.
  • the elongate channel 302 may have a variety of shapes, and the openings 306 may be formed on only a portion of the channel's surface.
  • the openings 306 may be formed only along a bottom half of the surface of the elongate channel 302 , as the filtrate may preferentially flow through these openings 306 by gravity.
  • the openings 306 may be formed along only a portion of the entire length of the elongate channel 302 .
  • eight collection chambers 304 are defined at least in part by an outer surface of the elongate channel 302 .
  • the eight collection chambers 304 may be separated by radially extending fins extending from the outer surface of the elongate channel 302 to an outer wall 312 of the nanowire filter 300 .
  • the collection chambers 304 may be configured differently.
  • more or fewer collection chambers 304 may be formed around the elongate channel 302 , and they may have different geometries.
  • the collection chambers 304 need not be integrally formed with the elongate channel 302 .
  • the elongate channel 302 may be suspended over one or more collection chambers, and, in operation, the filtrate emerging from the openings 306 of the elongate channel 302 may fall into the collection chambers.
  • a primary flow 301 of the solution may pass through the entrance 308 , through the elongate channel 302 and emerge from the exit 310 as retentate 18 .
  • the plurality of openings 306 may create a secondary flow of at least a portion of the solution, i.e., the filtrate, through the plurality of openings 306 and into the collection chambers 304 .
  • the collection chambers 304 may transfer the secondary flow to a filtrate container (not shown).
  • the nanowires may be equal to or smaller than the diameter of the filtered contaminant particles, the nanowires (due to their high aspect ratio) may substantially align with the primary flow 301 passing through the elongate channel 302 , and this alignment may inhibit or effectively prevent the nanowires from passing through the plurality of openings 306 .
  • the primary flow 301 of the solution through the elongate channel 302 may be greater than the secondary flow through the plurality of openings 306 into the collection chambers 304 to take advantage of this alignment.
  • the primary flow 301 may be at least 100 times greater than the secondary flow of the solution. This relatively high flow rate through the elongate channel 302 may help to align the nanowires with the primary flow 301 and prevent the nanowires from inadvertently passing through the plurality of openings 306 .
  • the primary flow rate may be correspondingly increased to help prevent nanowires from slipping through the enlarged openings 306 .
  • the size of the openings 306 and the primary flow rate through the elongate channel 302 may be varied in different embodiments of the nanowire filter 300 in order to change its filtering characteristics.
  • FIG. 6 is a perspective view of another micro-structured nanowire filter 600 that operates similarly to the nanowire filter 300 of FIGS. 3-5 .
  • FIG. 7 is a bottom view of the nanowire filter 600 .
  • the nanowire filter 600 comprises an elongate channel 606 having an entrance 608 and an exit 610 and defining a passage for a primary flow (designated by the arrow 601 ) of the solution containing nanowires.
  • the elongate channel 606 may, in turn, be defined at least in part by a micro-structured surface 602 comprising a plurality of openings 604 .
  • the openings 604 may have an average diameter of approximately 5 ⁇ m, and the elongate channel 606 may be approximately 50 cm in length.
  • the size and shape of the openings 604 , the size and shape of the elongate channel 606 , and the primary flow rate of the solution may be varied to achieve desired filtering characteristics.
  • an average height of the solution passing over the micro-structured surface 602 may also be varied to achieve the desired filtering characteristics.
  • a primary flow 601 of the solution may pass through the entrance 608 , through the elongate chamber 606 and emerge from the exit 610 as retentate 18 .
  • the plurality of openings 604 may create a secondary flow of filtrate out from the elongate chamber 606 .
  • the nanowires in the solution may substantially align with the primary flow 601 passing through the elongate chamber 606 , and this alignment may inhibit or effectively prevent the nanowires from passing through the plurality of openings 604 .
  • a trough or another type of collection chamber may be disposed beneath the micro-structured surface 602 to collect the filtrate.
  • the elongate chamber 606 may be coupled to at least one collection chamber in an arrangement similar to that of the nanowire filter 300 .
  • FIG. 8 is a perspective view
  • FIG. 9 is a front view of another example micro-structured nanowire filter 800 .
  • the nanowire filter 800 comprises a frame 802 defining a generally V-shaped trough between an entrance 804 and an exit 806 that may direct a primary flow (designated by the arrow 801 ) of the solution containing nanowires over a micro-structured surface 808 supported by the frame 802 .
  • the micro-structured surface 808 may, in one embodiment, comprise a plurality of surface protrusions and pores.
  • the frame 802 may comprise a metallic plate bent into the desired V-shape. In other embodiments, the frame 802 may comprise other materials, such as plastics.
  • the frame 802 may also have other shapes for directing the primary flow 801 of the solution. For example, the frame 802 may define a cylindrical or a U shape.
  • the micro-structured surface 808 may be defined by filter paper.
  • the filter paper may be any type of filter paper configured to filter the solution containing nanowires.
  • the filter paper may have a porosity of greater than 5 ⁇ m because the expected filtrate may have a diameter up to approximately 5 ⁇ m.
  • the filter paper may have a porosity of greater than 10 ⁇ m.
  • the porosity of the filter paper may be varied, as described above to achieve particular filtering characteristics.
  • the micro-structured surface 808 may be defined by a more permanent filtering substrate.
  • an inner surface of the frame 802 itself may have small protrusions defined thereon.
  • a primary flow 801 of the solution may pass through the entrance 804 , over the micro-structured surface 808 and emerge from the exit 806 as retentate 18 .
  • More compact contaminant particles which may tend to have lower drag in a flowing solution, may be pulled by gravity towards the micro-structured surface 808 , where they may be trapped by the micro-structures.
  • more massive contaminant particles may sediment more quickly out of the solution, while smaller contaminant particles may sediment more slowly.
  • the dimensions and arrangement of the nanowire filter 800 may be configured to filter different sizes of the contaminant particles as desired. Meanwhile, the nanowires in the solution may substantially align with the primary flow 801 , and this alignment may inhibit or effectively prevent the nanowires from being trapped by the micro-structured surface 808 .
  • a flow rate of the primary flow 801 of the solution may be monitored and controlled to ensure that the nanowire filter 800 is, indeed, preferentially filtering out the more compact, low aspect ratio particles. If the flow rate is too high, even the low aspect ratio contaminant particles may emerge as retentate 18 . However, if the flow rate is too low, high aspect ratio nanowires may settle out of the solution onto the bottom of the nanowire filter 800 .
  • FIG. 10 A schematic view of the microscopic filtering process is illustrated in FIG. 10 .
  • the nanowires 1002 may be generally aligned with the primary flow 801 of the solution while low aspect ratio contaminant particles 1006 are trapped by the micro-structures 1008 .
  • the nanowire filter 800 may trap filtrate within the micro-structures 1008 .
  • the primary flow 801 of the solution may be stopped, and a separate cleaning solution passed over the micro-structured surface 808 to eliminate the filtrate.
  • the micro-structured surface 808 may be occasionally replaced. For example, new filter paper may replace the old filter paper. Other methods of cleaning the micro-structured surface 808 may be used in other embodiments.
  • the micro-structured surface 808 may be cleaned periodically, according to some time interval, or may be cleaned after a certain amount of solution has been filtered. In another embodiment, the micro-structured surface 808 may be cleaned when the performance of the nanowire filter 800 has degraded by a certain amount.
  • FIG. 11 is a perspective view of another example micro-structured nanowire filter 1100 , with interior portions of the nanowire filter 1100 illustrated in dashed lines.
  • FIGS. 12 and 13 present radial and longitudinal cross-sections, respectively, of the nanowire filter 1100 to facilitate a greater understanding of its inner structure.
  • the nanowire filter 1100 comprises a rotatable tube 1102 having an entrance 1110 and an exit 1112 and defining a passage for a primary flow (designated by the arrow 1101 ) of the solution containing nanowires.
  • a micro-structured surface 1108 lines an inside of the rotatable tube 1102 .
  • the rotatable tube 1102 may also have disposed therein a substantially helical element 1104 and may be coupled to a drive member 1106 for rotating the rotatable tube 1102 about a longitudinal axis.
  • the rotatable tube 1102 may be formed from any metallic or non-metallic materials.
  • the size and shape of the rotatable tube 1102 may also be varied to achieve desired filtering characteristics.
  • the micro-structured surface 1108 lining the rotatable tube 1102 may comprise filter paper.
  • the filter paper may be any type of filter paper configured to filter the solution.
  • the filter paper may have a porosity of greater than 5 ⁇ m because the expected filtrate may have a diameter up to approximately 5 ⁇ m.
  • the filter paper may have a porosity of greater than 10 ⁇ m.
  • the porosity of the filter paper may be varied, as described above.
  • the micro-structured surface 1108 may be defined by an inner surface of the rotatable tube 1102 itself.
  • the rotatable tube 1102 may include a plurality of openings (not shown) that comprise the micro-structures.
  • the substantially helical element 1104 may be arranged adjacent the micro-structured surface 1108 and may comprise a strip of fluid impermeable material wound around an interior of the rotatable tube 1102 .
  • the substantially helical element 1104 may be formed integrally with or may be separate from the rotatable tube 1102 .
  • the substantially helical element 1104 is illustrated as extending only a short way into the passage defined by the rotatable tube 1102 . However, in other embodiments, the substantially helical element 1104 may extend much further.
  • the substantially helical element 1104 may have a height approximately equal to a radius of the rotatable tube 1102 .
  • the drive member 1106 may comprise any appropriate combination of a motor and fittings adapted to turn the rotatable tube 1102 .
  • the drive member 1106 may be configured to turn the rotatable tube 1102 at a variable angular velocity.
  • the drive member 1106 may turn the rotatable tube 1102 in a counter-clockwise direction (from the vantage point of FIG. 12 ).
  • the primary flow 1101 of the solution may be maintained at a level lower than a height of the substantially helical element 1104 , such that the solution cannot pass over the barrier represented by the substantially helical element 1104 .
  • the solution may be driven through the rotatable tube 1102 by the substantially helical element 1104 , and thus, a flow rate of the solution may be controlled by the drive member 1106 .
  • low aspect ratio contaminant particles which may tend to have lower drag in a flowing solution, may be pulled by gravity towards the micro-structured surface 1108 , where they may be trapped by micro-structures. Meanwhile, nanowires in the solution may substantially align with the primary flow 1101 , and this alignment may inhibit or effectively prevent the nanowires from being trapped by the micro-structured surface 1108 .
  • micro-structured surface 1108 It may be desirable to occasionally clean the micro-structured surface 1108 to maintain the filtering efficiency of the nanowire filter 1100 .
  • the primary flow of the solution may be stopped, and a separate cleaning solution passed over the micro-structured surface 1108 to eliminate the filtrate.
  • the micro-structured surface 1108 may be occasionally replaced. For example, new filter paper may replace the old filter paper. Other methods of cleaning the micro-structured surface 1108 may be used in other embodiments.
  • the micro-structured surface 1108 may be cleaned periodically, according to some time interval, or after a certain amount of solution has been filtered. In another embodiment, the micro-structured surface 1108 may be cleaned when the performance of the nanowire filter 1100 has degraded by a certain amount.
  • FIG. 14 is a perspective view
  • FIG. 15 is a top view of another micro-structured nanowire filter 1400 .
  • the nanowire filter 1400 may include an elongate channel 1402 having an entrance 1410 and an exit 1412 and defining a passage for a primary flow (designated by the arrow 1401 ) of the solution containing nanowires along a long axis 1404 .
  • the elongate channel 1402 may further include a micro-structured, bottom surface 1406 having a plurality of parallel ridges oriented at an angle to the long axis 1404 .
  • the elongate channel 1402 may be integral with or may be formed separately from the micro-structured surface 1406 .
  • walls 1414 , 1416 of the elongate channel 1402 as well as the micro-structured surface 1406 may be formed from any of a variety of metallic or non-metallic materials.
  • the elongate channel 1402 may have any of a number of other shapes and configurations.
  • the elongate channel 1402 may be fully enclosed, forming a generally rectangular cross-sectional shape.
  • the micro-structures of the bottom surface 1406 may comprise a plurality of parallel ridges (and corresponding valleys) that form a non-right angle with the long axis 1404 .
  • the ridges may at least partially define a plurality of fluid passages ending at a plurality of secondary openings 1408 from the elongate channel 1402 .
  • the plurality of secondary openings 1408 may, in one embodiment, allow filtrate to exit the elongate channel 1402 .
  • the ridges may be configured differently. For example, they need not be parallel, and, in one embodiment, the ridges may be oriented at a right angle to the long axis 1404 .
  • the parallel ridges may also be separated by a distance greater than 5 ⁇ m because the expected filtrate may have a diameter up to approximately 5 ⁇ m. In another embodiment, the parallel ridges may be separated by a distance greater than 10 ⁇ m.
  • a cross-section of the valleys formed by the ridges may be approximately square, such that the valleys are deeper than 5 ⁇ m or 10 ⁇ m in respective embodiments.
  • the size and shape of the ridges, the size and shape of the elongate channel 1402 , and the primary flow rate of the solution may be varied to achieve desired filtering characteristics.
  • FIG. 16 an enlarged, schematic view of the micro-structured surface 1406 of the nanowire filter 1400 is illustrated in operation.
  • a primary flow 1401 of the solution may flow across the micro-structured surface 1406 , and thereby across the plurality of parallel ridges.
  • the parallel ridges may then create a plurality of secondary flows 1604 , as filtrate from the solution is diverted by the parallel ridges through the secondary openings 1408 .
  • These secondary flows 1604 containing filtrate may or may not be collected in collection chambers (not shown). Since the filtrate may thus be diverted away from the nanowire filter 1400 , the nanowire filter 1400 may remain relatively clear of the filtrate. Thus, there may be a reduced need to clean the nanowire filter 1400 .
  • the plurality of parallel ridges may filter low aspect ratio contaminant particles from the nanowires due to the different drag characteristics of these particles in a fluid flow.
  • FIG. 17 is a perspective view
  • FIG. 18 is a cross-section of a nanowire filter 1700 having a narrow aperture 1708 , which filter may be used in the nanowire filtering system 10 or the nanowire filtering system 22 .
  • the nanowire filter 1700 may comprise a first plate 1702 and a second plate 1704 disposed adjacent the first plate 1702 .
  • the first and second plates 1702 , 1704 may at least partially define a passage 1706 extending through the filter, the passage 1706 having an entrance 1710 and an exit 1712 .
  • the passage 1706 defines an aperture 1708 having a width W less than at least one dimension of a set of contaminant particles.
  • the nanowire filter 1700 may be formed from a variety of different materials.
  • the nanowire filter 1700 may comprise a molded plastic.
  • the nanowire filter 1700 may be formed from stainless steel.
  • the nanowire filter 1700 may comprise stainless steel first and second plates 1702 , 1704 separated by relatively hard micro- or nano-particles (e.g., silica). In one embodiment, a plurality of such plates may be stacked one upon the other in order to achieve a high flow rate through the nanowire filter 1700 .
  • the first plate 1702 and the second plate 1704 are substantially parallel and define a separation distance between them of less than at least one dimension of a set of contaminant particles. Since the separation distance between the two plates 1702 , 1704 is substantially invariant, the aperture 1708 may coincide with the entrance 1710 to the nanowire filter 1700 .
  • the aperture 1708 may have a width W selected to filter out the set of contaminant particles having at least one dimension greater than the width.
  • the aperture 1708 may have a width W less than 2 ⁇ m, in order to filter out particles having a diameter greater than 2 ⁇ m.
  • the aperture 1708 may have a width W less than 1 ⁇ m, or less than 0.5 ⁇ m, in order to filter out contaminant particles having greater dimensions.
  • the width W of the aperture 1708 may be varied in different embodiments to filter out different sets of contaminant particles, while allowing nanowires to pass through the filter 1700 unimpeded.
  • the length L of the aperture 1708 may also be varied to pass more or less solution. In one embodiment, a very long aperture 1708 may be used to enable a greater flow of solution through the passage 1706 of the nanowire filter 1700 .
  • nanowires in the solution may substantially align with the flow through the passage 1706 of the nanowire filter 1700 .
  • the nanowires may present a relatively small cross-section.
  • the nanowires may have an average diameter ranging from 20 to 200 nm.
  • the nanowires may be as long as, or longer than, the width W, the narrow cross-section of the nanowires may enable the nanowires to align with the flow and pass through the nanowire filter 1700 .
  • FIG. 19 A schematic view of the nanowire filter 1700 in operation is illustrated in FIG. 19 .
  • the first plate 1702 is illustrated transparently, in order to schematically show the nanowires 1902 in the solution aligned with a flow 1906 through the nanowire filter 1700 .
  • low aspect ratio contaminant particles 1904 (which may, for example, have a diameter approximately equal to a length of the nanowires) may be “captured” at the aperture 1708 , unable to pass through the nanowire filter 1700 with the rest of the retentate 18 .
  • the nanowire filter 1700 is illustrated as comprising two substantially parallel plates forming an aperture 1708 sized to prevent large diameter contaminant particles from passing therethrough, other configurations are, of course, possible.
  • the nanowire filter 1700 may include any other aperture shape (e.g., circular, elliptical, triangular) having at least one width less than at least one dimension of a set of contaminant particles.
  • the nanowire filter 1700 may comprise a plurality of cylindrical passages, each of the passages having a diameter less than the at least one dimension of the set of contaminant particles.
  • the nanowire filter 1700 may build up filtrate at the aperture 1708 , which may eventually become clogged by these large contaminant particles. As a result, it may be desirable to “de-clog” the filter 1700 by occasionally removing these particles from the aperture 1708 in order to maintain the filtering efficiency of the nanowire filter 1700 .
  • the primary flow of the solution (designated by the arrow 1906 ) may be occasionally stopped and the nanowire filter 1700 removed for cleaning.
  • the primary flow 1906 of the solution may be stopped, and a reverse flow (not shown) of a liquid generated through the passage 1706 in order to dislodge the larger particles from the aperture 1708 .
  • a reverse flow of the solution itself may be periodically generated through the passage 1706 in order to dislodge the larger particles from the aperture 1708 .
  • This reverse flow may also be coupled with an external cleaning, ultrasonic energy, or another mechanism to ensure that the filtered contaminant particles are well-separated from the aperture 1708 and do not immediately re-clog the nanowire filter 1700 .
  • the solution may flow through the nanowire filter 1700 in both directions, a net flow may be directed from the entrance 1710 to the exit 1712 of the nanowire filter 1700 .
  • the nanowire filter 1700 may be de-clogged periodically, according to some time interval. In another embodiment, the nanowire filter 1700 may be de-clogged after a certain amount of solution has been filtered. In yet another embodiment, the nanowire filter 1700 may be de-clogged when the performance of the nanowire filter 1700 (as measured, for example, by a flow rate of the primary flow 1906 through the nanowire filter 1700 ) has degraded by a certain amount.
  • FIG. 20 is a perspective view
  • FIG. 21 is a bottom view of another nanowire filter 2000 having a narrow aperture 2008 defined at least in part by a top plate 2002 and a bottom plate 2004 .
  • the nanowire filter 2000 may be configured similarly to the nanowire filter 1700 , except that the bottom plate 2004 may further include a plurality of openings 2010 .
  • the plurality of openings 2010 may be considered micro-structures. In other embodiments, different micro-structures may be used in conjunction with a narrow aperture to form other nanowire filters.
  • the nanowire filter 2000 may filter out larger contaminant particles at the aperture 2008 and may filter out smaller contaminant particles via the openings 2010 in the bottom plate 2004 .
  • the nanowire filter 2000 may effectively combine the filtering capabilities of the nanowire filter 1700 with the filtering capabilities of, for example, the nanowire filter 600 .
  • the flow rate, solution composition and dimensions of the components of the nanowire filter 2000 may be varied to optimize one or both of these filtering capabilities.
  • FIG. 22 is a perspective view of another nanowire filter 2200 having a narrow aperture 2208 .
  • FIGS. 23 and 24 illustrate a cross-sectional view and a top view of the nanowire filter 2200 , respectively.
  • the nanowire filter 2200 may comprise a top plate 2202 and a bottom plate 2204 disposed adjacent the top plate 2202 .
  • the top plate 2202 and the bottom plate 2204 may at least partially define a passage 2216 extending through the nanowire filter 2200 .
  • the passage 2216 defines at least one aperture 2208 having a width less than at least one dimension of a set of contaminant particles.
  • the top plate 2202 may further include an entrance 2212 therethrough.
  • the entrance 2212 may define an opening through which a primary flow (designated by the arrows 2201 ) of the solution may be directed.
  • a conduit 2214 for the solution may be coupled to the entrance 2212 in order to guide a primary flow 2201 of the solution from the source container 12 into the nanowire filter 2200 .
  • the nanowire filter 2200 may be formed from a variety of different materials.
  • the nanowire filter 2200 may comprise a molded plastic.
  • the nanowire filter 2200 may be formed from stainless steel.
  • the top plate 2202 and the bottom plate 2204 are substantially parallel and define a separation distance between them of less than at least one dimension of a set of contaminant particles.
  • the aperture 2208 having a width W may coincide with the entrance 2212 of the nanowire filter 2200 and may have a generally cylindrical shape, as illustrated by the dashed lines of FIG. 23 .
  • the size and configuration of the aperture 2208 and the position of the plates 2202 , 2204 may be varied to filter out particular contaminant particles from the solution.
  • the solution containing nanowires may flow outwards from the entrance 2212 between the two plates 2202 , 2204 .
  • nanowires in the solution may align with the primary flow 2201 through the nanowire filter 2200 , while large, low aspect ratio, contaminant particles may be prevented from passing radially outwards between the top and bottom plates 2202 , 2204 .
  • the nanowire filter 2200 may build up filtrate at the aperture 2208 .
  • the nanowire filter 2200 may be occasionally de-clogged to maintain its filtering efficiency.
  • FIG. 25 is a perspective view
  • FIG. 26 is a side view of another nanowire filter 2500 having a narrow aperture 2508 .
  • the nanowire filter 2500 may comprise a first plate 2502 and a second plate 2504 disposed adjacent the first plate 2502 .
  • the first and second plates 2502 , 2504 may converge, such that a passage 2506 extending through the nanowire filter 2500 may narrow between an entrance 2510 and an exit 2512 .
  • the aperture 2508 may be defined at the exit 2512 and may have a width less than at least one dimension of a set of contaminant particles.
  • the nanowire filter 2500 may be configured and may function similarly to the nanowire filter 1700 .
  • the size and configuration of the components of the nanowire filter 2500 may be varied depending on the desired filtering characteristics.
  • each particle may be captured at that portion of the passage 2506 having a width approximately equal to that particle's diameter.
  • the entrance 2510 of the nanowire filter 2500 has a width of 10 ⁇ m and the exit 2512 has a width of 1 ⁇ m, then 5 ⁇ m particles may be captured somewhere near the middle of the passage 2506 , and 1.1 ⁇ m particles may be captured very close to the exit 2512 .
  • the nanowire filter 2500 may filter out contaminant particles along its entire length. Thus, it may take longer for the nanowire filter 2500 to become clogged.
  • FIG. 27 is a perspective view
  • FIG. 28 is a side view of another nanowire filter 2700 having a narrow aperture 2708 .
  • the nanowire filter 2700 may comprise a first plate 2702 , a second plate 2704 disposed adjacent the first plate 2702 , and a passage 2706 defined between the two plates 2702 , 2704 .
  • the passage 2706 may define at least one aperture 2708 approximately halfway through having a width less than at least one dimension of a set of contaminant particles.
  • the nanowire filter 2700 may have an aperture 2708 arranged substantially anywhere along the passage 2706 defined between the two plates 2702 , 2704 , and the plates 2702 , 2704 may have a variety of different shapes and configurations.
  • the nanowire filter 2700 may function generally similarly to the nanowire filter 2500 described above.
  • FIG. 29 is a perspective view
  • FIG. 30 is a side view of another nanowire filter 2900 having a plurality of narrow apertures 2908 , 2928 and 2938 .
  • the nanowire filter 2900 may comprise a first plate 2902 and a second plate 2904 disposed adjacent the first plate 2902 .
  • the two plates 2902 , 2904 may at least partially define a passage having an entrance 2910 and an exit 2912 , and may at least partially define an aperture 2908 having a width less than at least one dimension of a first set of contaminant particles (e.g., 2 ⁇ m).
  • the nanowire filter 2900 may further comprise a third plate 2922 and a fourth plate 2924 disposed adjacent the third plate 2922 .
  • the two plates 2922 , 2924 may at least partially define a second passage having a second entrance 2926 and a second exit 2927 , and may at least partially define a second aperture 2928 having a width less than at least one dimension of a second set of contaminant particles (e.g., 1 ⁇ m).
  • the second set of contaminant particles may have at least one dimension smaller than the at least one dimension of the first set of contaminant particles.
  • the nanowire filter 2900 may comprise a fifth plate 2932 and a sixth plate 2934 disposed adjacent the fifth plate 2932 .
  • the two plates 2932 , 2934 may at least partially define a third passage having a third entrance 2936 and a third exit 2937 , and may at least partially define a third aperture 2938 having a width less than at least one dimension of a third set of contaminant particles (e.g., 0.5 ⁇ m).
  • the third set of contaminant particles may have at least one dimension smaller than the at least one dimension of the second set of contaminant particles.
  • more or fewer apertures of various sizes may be used to filter out particular sets of contaminant particles.
  • the nanowire filter 2900 may function generally similarly to the nanowire filter 2500 described above.
  • the nanowire filter 2900 may filter out contaminant particles having diameters larger than 2 ⁇ m at the first aperture 2908 , other contaminant particles having diameters between 1 and 2 ⁇ m at the second aperture 2928 and still more contaminant particles having diameters between 0.5 and 1 ⁇ m at the third aperture 2938 .
  • FIG. 31 illustrates a flow diagram for a method 3100 of filtering a solution containing nanowires using a micro-structured nanowire filter, according to one embodiment.
  • This method 3100 will be discussed primarily in the context of the nanowire filter 300 incorporated into the nanowire filtering system 10 . However, it may be understood that the acts disclosed herein may also be executed using a variety of other micro-structured nanowire filters (e.g., nanowire filters 600 , 800 , 1100 , 1400 , and 2000 ), in accordance with the described method.
  • the method begins at 3102 , when a solution containing nanowires is provided.
  • the solution containing nanowires may comprise the solution within which the nanowires were formed.
  • the solution within which the nanowires were formed may have already undergone a variety of processing and/or filtering acts.
  • the solution containing nanowires may comprise a polydisperse solution including a variety of particles and nano-structures in addition to the desired nanowires.
  • a variety of different solutions may be filtered in different embodiments, including different percentages of nanowires, different solvents and additives, different shapes and types of low aspect ratio particles, etc.
  • the nanowire filtering system 10 and, in particular, the nanowire filter 300 may be configured differently.
  • a primary flow of the solution is generated.
  • the primary flow of the solution may be generated by any of a variety of mechanisms.
  • a pump 14 as illustrated in FIG. 1 , may be used to generate the primary flow of the solution.
  • the primary flow of the solution may be generated by gravity from the source container 12 .
  • a pressure differential e.g., a source pressurized tank
  • a flow rate of this primary flow may also be varied in different embodiments, depending on the configuration of the nanowire filter 300 , the source container 12 , a pump 14 , tubes and conduits connecting these components, a target filtration rate, etc.
  • the solution is filtered by directing the primary flow over a micro-structured surface configured to filter the solution.
  • the primary flow may be directed over the micro-structured surface in a variety of ways.
  • a plurality of tubes, connectors, valves and other fluid conduits may direct the primary flow towards, and subsequently over the micro-structured surface.
  • the primary flow may be directed over the micro-structured surface, at least in part, by structures (such as the interior walls of the elongate channel 302 ) within the nanowire filter 300 itself.
  • the flow rate of the primary flow may also be varied in order to control an average height of the solution above the micro-structured surface.
  • the micro-structured surface may comprise any of a variety of microstructures.
  • the nanowire filter 300 may include a plurality of openings 306 .
  • the nanowire filter 800 may include a micro-structured surface 808 having a plurality of microscopic protrusions and pores.
  • the nanowire filter 1400 may comprise a plurality of parallel ridges.
  • micro-structures may include any small structures formed in, on or through a surface that may interfere with a fluid flow. The micro-structures are preferably configured to filter the solution by removing undesirable contaminant particles. Examples of suitable configurations are described above in greater detail with reference to the exemplary micro-structured nanowire filters.
  • the retentate 18 emerging from the nanowire filter 300 may comprise a more uniform solution of nanowires. Meanwhile, the filtrate from the solution may flow away from the micro-structured surface and thereby away from the nanowire filter 300 . In other embodiment, the filtrate may be captured and held by the micro-structured surface (e.g., as illustrated in FIGS. 8-10 ).
  • directing the primary flow over the micro-structured surface may further comprise creating a secondary flow through the plurality of openings 306 .
  • the secondary flow through the plurality of openings 306 may include both solvent and low aspect ratio contaminant particles.
  • a flow rate of the primary flow may be selected to be at least 10 times greater than a flow rate of the secondary flow.
  • a flow rate of the primary flow may be at least 100 times greater than a flow rate of the secondary flow.
  • directing the primary flow over the micro-structured surface may further comprise creating a secondary flow directed away from the primary flow of the solution via a plurality of fluid passages defined by a plurality of parallel ridges.
  • a flow rate of the primary flow may be selected to be at least 10 times greater than a flow rate of the secondary flow.
  • a flow rate of the primary flow may be at least 100 times greater than a flow rate of the secondary flow.
  • the primary flow of the solution may also be occasionally stopped, and a cleaning solution may be passed over the micro-structured surface.
  • a cleaning solution may be passed over the micro-structured surface.
  • this act of passing the cleaning solution over the micro-structured surface may be desirable to mitigate or prevent the build-up of filtrate and any resulting degradation in filtering efficiency.
  • the primary flow may be stopped and the cleaning solution applied periodically, according to some time interval.
  • these acts may be performed after a certain amount of solution has been filtered.
  • these acts may be performed when the performance of the nanowire filter has degraded by a certain amount.
  • the retentate 18 may be collected, liquid may be added, and the retentate 18 may be recirculated over the micro-structured surface.
  • An exemplary nanowire filtering system 22 for performing such acts is illustrated in FIG. 2 .
  • the retentate 18 may be collected in a variety of ways.
  • a second pump (not illustrated) may generate a flow of the retentate 18 from the nanowire filter 16 back to the source container 12 , where it may be collected.
  • replacement solvent may be added.
  • an inlet (not shown) may combine additional solvent with the retentate 18 before the retentate 18 is collected at the source container 12 .
  • the additional solvent may be added directly to the source container 12 (e.g., at a rate generally corresponding to the loss of filtrate from the solution).
  • the retentate 18 may be recirculated over the micro-structured surface a number of times. In one embodiment, for example, the retentate 18 may be recirculated a pre-determined number of times calibrated to approximately filter the solution to a desired purity. In another embodiment, a purity of the retentate 18 (corresponding, for example, to the percentage weight of nanowires in the retentate 18 or to a percentage concentration of replacement solvent) may be tested periodically or continuously, in order to determine whether or not to continue recirculating the retentate 18 over the micro-structured surface. Once a desired purity is reached, the recirculation of the retentate 18 may be stopped, and the solution collected in the source container 12 .
  • FIG. 32 illustrates a flow diagram for an alternative method 3200 of filtering a solution containing nanowires using a nanowire filter having a narrow aperture, according to one embodiment.
  • This method 3200 will be discussed in the context of the nanowire filter 1700 incorporated into the nanowire filtering system 10 . However, it may be understood that the acts disclosed herein may also be executed using a variety of other nanowire filters having narrow apertures (e.g., nanowire filters 2000 , 2200 , 2500 , 2700 , and 2900 ), in accordance with the described method.
  • the method begins at 3202 , when a solution containing nanowires and a first set of contaminant particles is provided.
  • the solution containing nanowires may comprise the solution within which the nanowires were formed.
  • the solution within which the nanowires were formed may have already undergone a variety of processing and/or filtering acts.
  • a flow of the solution is generated.
  • the flow of the solution may be generated by any of a variety of mechanisms, as described above with respect to act 3104 .
  • the solution is filtered by directing the flow through a passage defining an aperture having a width less than at least one dimension of the first set of contaminant particles.
  • the flow may be directed through the passage in any of a variety of ways.
  • a plurality of tubes, connectors, valves and other fluid conduits may direct the flow towards and through the passage.
  • the passage and the aperture defined thereby may comprise any of a variety of shapes and configurations.
  • a pair of parallel plates 1702 , 1704 may at least partially define a passage having a generally rectangular cross-section.
  • the passage may define circular, elliptical, triangular or irregularly shaped apertures.
  • the nanowire filter 1700 may eventually become clogged by filtrate collecting at the entrance 1710 to the passage.
  • the flow of the solution may therefore occasionally be stopped, a reverse flow of a liquid generated, and the reverse flow directed through the passage in a direction opposite to the flow of the solution.
  • a cleaning solution e.g., water
  • a reverse flow of the solution itself may occasionally be generated.
  • the pump 14 may be configured to pump in both a forward and reverse direction and may periodically switch direction in order to drive the solution back and forth through the nanowire filter 1700 .
  • a flow rate of the forward flow of the solution, and a flow rate of the reverse flow may be chosen such that there is a net flow of the solution towards the exit 1712 of the passage (i.e., in the forward direction).
  • potential clogging of the nanowire filter 1700 may be avoided or at least delayed by the periodic flushing of the entrance 1710 .
  • the reverse flow may be generated periodically, according to some time interval, or may be generated after a certain amount of solution has been filtered.
  • the reverse flow may be generated when the performance of the nanowire filter 1700 has degraded by a certain amount.
  • the reverse flow may be generated based on a reduction in a forward flow rate of the solution.
  • the nanowire filter 16 may further include a tortuous path filter (not illustrated) located upstream from the aperture 1708 .
  • the tortuous path filter may comprise any type of tortuous path filter.
  • the tortuous path filter may be configured similarly to a beta pure depth filter, manufactured by 3M, with a nominal pore size of 125 ⁇ m.
  • the flow of the solution may be further directed to a second passage defining a second aperture having a width less than at least one dimension of a second set of contaminant particles (e.g., 1 ⁇ m), and may then be directed to a third passage defining a third aperture having a width less than at least one dimension of a third set of contaminant particles (e.g., 0.5 ⁇ m) (as illustrated in FIG. 29 ).
  • the flow of the solution may be directed first through the first passage, then through the second passage, and then through the third passage.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Composite Materials (AREA)
  • Ceramic Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Liquid Crystal (AREA)
  • Laminated Bodies (AREA)
  • Separation Of Solids By Using Liquids Or Pneumatic Power (AREA)
US12/105,525 2007-04-20 2008-04-18 Systems and methods for filtering nanowires Abandoned US20090321364A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/105,525 US20090321364A1 (en) 2007-04-20 2008-04-18 Systems and methods for filtering nanowires

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US91323107P 2007-04-20 2007-04-20
US12/105,525 US20090321364A1 (en) 2007-04-20 2008-04-18 Systems and methods for filtering nanowires

Publications (1)

Publication Number Publication Date
US20090321364A1 true US20090321364A1 (en) 2009-12-31

Family

ID=39620244

Family Applications (4)

Application Number Title Priority Date Filing Date
US12/105,525 Abandoned US20090321364A1 (en) 2007-04-20 2008-04-18 Systems and methods for filtering nanowires
US12/106,193 Active 2029-08-13 US8018563B2 (en) 2007-04-20 2008-04-18 Composite transparent conductors and methods of forming the same
US13/206,279 Active US10244637B2 (en) 2007-04-20 2011-08-09 Composite transparent conductors and methods of forming the same
US16/283,808 Active US11224130B2 (en) 2007-04-20 2019-02-24 Composite transparent conductors and methods of forming the same

Family Applications After (3)

Application Number Title Priority Date Filing Date
US12/106,193 Active 2029-08-13 US8018563B2 (en) 2007-04-20 2008-04-18 Composite transparent conductors and methods of forming the same
US13/206,279 Active US10244637B2 (en) 2007-04-20 2011-08-09 Composite transparent conductors and methods of forming the same
US16/283,808 Active US11224130B2 (en) 2007-04-20 2019-02-24 Composite transparent conductors and methods of forming the same

Country Status (9)

Country Link
US (4) US20090321364A1 (fr)
EP (2) EP2477229B1 (fr)
JP (2) JP6098860B2 (fr)
KR (1) KR101456838B1 (fr)
CN (2) CN101689568B (fr)
HK (1) HK1134860A1 (fr)
SG (1) SG156218A1 (fr)
TW (2) TWI487125B (fr)
WO (1) WO2008131304A1 (fr)

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100078197A1 (en) * 2008-09-30 2010-04-01 Fujifilm Corporation Metal nanowires, method for producing the same, and transparent conductor
US20130039806A1 (en) * 2011-08-12 2013-02-14 Jeffrey Blinn Nanowire purification methods, compositions, and articles
US8454859B2 (en) 2011-02-28 2013-06-04 Nthdegree Technologies Worldwide Inc Metallic nanofiber ink, substantially transparent conductor, and fabrication method
US20140001418A1 (en) * 2009-08-24 2014-01-02 Cambrios Technologies Corporation Purification of metal nanostructures for improved haze in transparent conductors made from the same
WO2014004712A1 (fr) * 2012-06-28 2014-01-03 Nthdegree Technologies Worldwide Inc. Systèmes et procédés de fabrication de nanostructures
US8927855B2 (en) 2011-06-14 2015-01-06 Panasonic Intellectual Property Management Co., Ltd. Solar cell and method for fabricating the same
US9150746B1 (en) 2014-07-31 2015-10-06 C3Nano Inc. Metal nanowire inks for the formation of transparent conductive films with fused networks
US9645454B2 (en) 2013-04-01 2017-05-09 Kabushiki Kaisha Toshiba Transparent conductive film and electric device
US9802397B2 (en) 2014-11-27 2017-10-31 Panasonic Intellectual Property Management Co., Ltd. Structural member for electronic devices
US9920207B2 (en) 2012-06-22 2018-03-20 C3Nano Inc. Metal nanostructured networks and transparent conductive material
US10020807B2 (en) 2013-02-26 2018-07-10 C3Nano Inc. Fused metal nanostructured networks, fusing solutions with reducing agents and methods for forming metal networks
US10029916B2 (en) 2012-06-22 2018-07-24 C3Nano Inc. Metal nanowire networks and transparent conductive material
US10081020B2 (en) 2015-06-12 2018-09-25 Dow Global Technologies Llc Hydrothermal method for manufacturing filtered silver nanowires
US10376898B2 (en) 2015-06-12 2019-08-13 Dow Global Technologies Llc Method for manufacturing high aspect ratio silver nanowires
CN110201440A (zh) * 2019-05-23 2019-09-06 中色科技股份有限公司 一种板式过滤机换纸涨缩轴涨缩方法
US10564780B2 (en) 2015-08-21 2020-02-18 3M Innovative Properties Company Transparent conductors including metal traces and methods of making same
US11274223B2 (en) 2013-11-22 2022-03-15 C3 Nano, Inc. Transparent conductive coatings based on metal nanowires and polymer binders, solution processing thereof, and patterning approaches
US11343911B1 (en) 2014-04-11 2022-05-24 C3 Nano, Inc. Formable transparent conductive films with metal nanowires
US11515058B2 (en) 2018-05-30 2022-11-29 Hefei Boe Display Technology Co., Ltd. Conductive film, production method thereof, and display apparatus
US11866827B2 (en) 2011-02-28 2024-01-09 Nthdegree Technologies Worldwide Inc Metallic nanofiber ink, substantially transparent conductor, and fabrication method

Families Citing this family (243)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102250506B (zh) 2005-08-12 2014-07-09 凯博瑞奥斯技术公司 基于纳米线的透明导体
US8454721B2 (en) * 2006-06-21 2013-06-04 Cambrios Technologies Corporation Methods of controlling nanostructure formations and shapes
US8018568B2 (en) 2006-10-12 2011-09-13 Cambrios Technologies Corporation Nanowire-based transparent conductors and applications thereof
CN101589473B (zh) * 2006-10-12 2011-10-05 凯博瑞奥斯技术公司 基于纳米线的透明导体及其应用
CN101910263B (zh) * 2007-05-29 2013-11-13 伊诺瓦动力公司 具有粒子的表面以及相关方法
KR20090023803A (ko) * 2007-09-03 2009-03-06 삼성전자주식회사 액정 표시 패널 및 이의 제조 방법
JP5221088B2 (ja) * 2007-09-12 2013-06-26 株式会社クラレ 透明導電膜およびその製造方法
KR20100125315A (ko) * 2008-02-26 2010-11-30 캄브리오스 테크놀로지즈 코포레이션 전도성 피처의 스크린 인쇄를 위한 방법 및 조성물
CN102186643B (zh) 2008-08-21 2014-05-21 因诺瓦动力学股份有限公司 增强的表面、涂层及相关方法
KR20100029633A (ko) * 2008-09-08 2010-03-17 삼성전자주식회사 능동형 반투과 소자를 구비하는 디스플레이 장치
JP2010087105A (ja) * 2008-09-30 2010-04-15 Fujifilm Corp 太陽電池
JP5189449B2 (ja) * 2008-09-30 2013-04-24 富士フイルム株式会社 金属ナノワイヤー含有組成物、及び透明導電体
US20100101829A1 (en) * 2008-10-24 2010-04-29 Steven Verhaverbeke Magnetic nanowires for tco replacement
US20100101830A1 (en) * 2008-10-24 2010-04-29 Applied Materials, Inc. Magnetic nanoparticles for tco replacement
KR20100045675A (ko) * 2008-10-24 2010-05-04 삼성전자주식회사 표시 장치
US20110180133A1 (en) * 2008-10-24 2011-07-28 Applied Materials, Inc. Enhanced Silicon-TCO Interface in Thin Film Silicon Solar Cells Using Nickel Nanowires
US20100101832A1 (en) * 2008-10-24 2010-04-29 Applied Materials, Inc. Compound magnetic nanowires for tco replacement
JP5429192B2 (ja) 2009-01-16 2014-02-26 コニカミノルタ株式会社 パターン電極の製造方法及びパターン電極
EP2409486A4 (fr) * 2009-03-18 2012-08-22 Bayer Materialscience Ag Système optique de niveau de tranche
JP5584991B2 (ja) * 2009-04-02 2014-09-10 コニカミノルタ株式会社 透明電極、透明電極の製造方法、および有機エレクトロルミネッセンス素子
JP5625256B2 (ja) * 2009-04-02 2014-11-19 コニカミノルタ株式会社 透明電極、透明電極の製造方法及び有機エレクトロルミネッセンス素子
US9536633B2 (en) 2009-04-10 2017-01-03 Sumitomo Chemical Company, Limited Metallic composite and composition thereof
KR101009442B1 (ko) * 2009-04-15 2011-01-19 한국과학기술연구원 전도성 구조체를 이용한 전도성필름 제조방법 및 전도성필름
GB0908300D0 (en) 2009-05-14 2009-06-24 Dupont Teijin Films Us Ltd Polyester films
CN101963681B (zh) * 2009-07-24 2012-06-20 清华大学 偏光元件
TW201125810A (en) * 2009-08-25 2011-08-01 Cambrios Technologies Corp Methods for controlling metal nanostructures morphology
JP5391932B2 (ja) * 2009-08-31 2014-01-15 コニカミノルタ株式会社 透明電極、透明電極の製造方法、および有機エレクトロルミネッセンス素子
TWI420540B (zh) 2009-09-14 2013-12-21 Ind Tech Res Inst 藉由光能或熱能成形之導電材料、導電材料之製備方法以及導電組合物
KR101587124B1 (ko) * 2009-09-23 2016-01-21 삼성디스플레이 주식회사 액정 표시 장치
US8917377B2 (en) 2009-10-22 2014-12-23 Samsung Electronics Co., Ltd. Active lenses, stereoscopic image display apparatuses including active lenses and methods of operating the same
KR101632315B1 (ko) * 2009-10-22 2016-06-21 삼성전자주식회사 능동 렌즈 및 이를 채용한 입체 영상 디스플레이 장치
KR101611422B1 (ko) * 2009-11-17 2016-04-12 삼성전자주식회사 그래핀과 나노구조체의 복합 구조체 및 그 제조방법
JPWO2011065213A1 (ja) * 2009-11-27 2013-04-11 コニカミノルタホールディングス株式会社 分散液、透明電極、および有機エレクトロルミネッセンス素子
TWI480896B (zh) * 2009-12-04 2015-04-11 Cambrios Technologies Corp 具有增加濁度之以奈米結構為主之透明導體及包含其之裝置
KR101992172B1 (ko) * 2010-01-15 2019-06-24 캄브리오스 필름 솔루션스 코포레이션 저헤이즈 투명 도전체
CN102770959A (zh) * 2010-01-25 2012-11-07 小利兰·斯坦福大学托管委员会 接合的纳米结构及其方法
EP2528855A1 (fr) 2010-01-25 2012-12-05 The Board of Regents of the Leland Stanford Junior University Nanostructures dopées par fullerène et procédés correspondants
SG183138A1 (en) * 2010-02-05 2012-09-27 Cambrios Technologies Corp Photosensitive ink compositions and transparent conductors and method of using the same
CA2828468A1 (fr) * 2010-02-27 2011-09-01 Innova Dynamics, Inc. Structures dotees d'additifs integres a leur surface et procedes de fabrication connexes
US8518472B2 (en) * 2010-03-04 2013-08-27 Guardian Industries Corp. Large-area transparent conductive coatings including doped carbon nanotubes and nanowire composites, and methods of making the same
US9023217B2 (en) 2010-03-23 2015-05-05 Cambrios Technologies Corporation Etch patterning of nanostructure transparent conductors
EP2418033B1 (fr) * 2010-04-06 2020-05-06 Sumitomo Chemical Company, Limited Complexe métallique et composition le contenant
JP5813103B2 (ja) * 2010-06-11 2015-11-17 スリーエム イノベイティブ プロパティズ カンパニー 力測定を用いるタッチ位置センサ
TWI416544B (zh) * 2010-06-23 2013-11-21 Nat Univ Tsing Hua 複合電極及其製作方法、矽太陽能電池電極及矽太陽能電池
US10306758B2 (en) * 2010-07-16 2019-05-28 Atmel Corporation Enhanced conductors
FR2962852A1 (fr) * 2010-07-19 2012-01-20 Saint Gobain Electrode transparente pour cellule photovoltaique a haut rendement
KR101119269B1 (ko) * 2010-07-26 2012-03-16 삼성전기주식회사 터치패널용 투명도전막 및 그 제조방법
EP2598942A4 (fr) * 2010-07-30 2014-07-23 Univ Leland Stanford Junior Films conducteurs
KR101658154B1 (ko) * 2010-07-30 2016-10-04 엘지디스플레이 주식회사 광전소자 및 그의 제조방법
KR101489161B1 (ko) * 2010-07-30 2015-02-06 주식회사 잉크테크 투명 도전막의 제조방법 및 이에 의해 제조된 투명 도전막
JP5988974B2 (ja) 2010-08-07 2016-09-07 ティーピーケイ ホールディング カンパニー リミテッド 表面埋込添加物を有する素子構成要素および関連製造方法
US20120061625A1 (en) * 2010-09-09 2012-03-15 Eckert Karissa L Transparent conductive films, compositions, articles, and methods
US9112058B2 (en) 2010-09-10 2015-08-18 The Board Of Trustees Of The Leland Stanford Junior University Interface apparatus and methods
EP2619816A4 (fr) * 2010-09-24 2014-06-11 Univ California Électrodes composite de polymère et de nanofils
JP5664119B2 (ja) * 2010-10-25 2015-02-04 ソニー株式会社 透明導電膜、透明導電膜の製造方法、光電変換装置および電子機器
KR20120044545A (ko) * 2010-10-28 2012-05-08 삼성엘이디 주식회사 반도체 발광 소자
US20120111614A1 (en) * 2010-11-10 2012-05-10 Free James J Integrated composite structure and electrical circuit utilizing carbon fiber as structural materials and as electric conductor
GB201019212D0 (en) 2010-11-12 2010-12-29 Dupont Teijin Films Us Ltd Polyester film
WO2012078191A1 (fr) * 2010-12-07 2012-06-14 Rhodia Operations Nanostructures électroconductrices, procédé de fabrication de ces nanostructures, films polymères électroconducteurs contenant ces nanostructures, et dispositifs électroniques contenant ces films
EP2465966A1 (fr) * 2010-12-15 2012-06-20 Innovation & Infinity Global Corp. Structure conductrice transparente et son procédé de fabrication
WO2012083082A1 (fr) 2010-12-15 2012-06-21 Sun Chemical Corporation Compositions d'attaque imprimables pour la gravure de films conducteurs transparents à base de nanofils en argent
US8763525B2 (en) * 2010-12-15 2014-07-01 Carestream Health, Inc. Gravure printing of transparent conductive films containing networks of metal nanoparticles
KR101892198B1 (ko) * 2010-12-15 2018-08-27 콘달리그 에이에스 자외선 경화성 전도성 조성물의 제조 방법 및 그 방법으로 제조된 조성물
CN102569432B (zh) * 2010-12-17 2014-12-10 国家纳米科学中心 一种透明电极材料及其制备方法
KR20120071149A (ko) * 2010-12-22 2012-07-02 엘지전자 주식회사 박막 태양전지 모듈 및 그 제조 방법
US20120273455A1 (en) * 2011-04-29 2012-11-01 Clean Energy Labs, Llc Methods for aligned transfer of thin membranes to substrates
US9575598B2 (en) 2010-12-27 2017-02-21 Tsinghua University Inputting fingertip sleeve
JP2012146430A (ja) * 2011-01-11 2012-08-02 Innovation & Infinity Global Corp 混合ナノ粒子を利用した透明導電構造及びその製造方法
KR101795419B1 (ko) 2011-01-26 2017-11-13 주식회사 잉크테크 투명 도전막의 제조방법 및 이에 의해 제조된 투명 도전막
US20120196053A1 (en) * 2011-01-28 2012-08-02 Coull Richard Methods for creating an electrically conductive transparent structure
WO2012112818A2 (fr) * 2011-02-16 2012-08-23 The Regents Of The University Of California Réseaux interpénétrants de carbone cristallin et de matériaux électroactifs à l'échelle nanométrique
EP2613328B1 (fr) 2011-02-23 2016-12-14 Dexerials Corporation Film électroconducteur transparent, dispositif de saisie d'informations et appareil électronique
WO2012132828A1 (fr) * 2011-03-29 2012-10-04 住友化学株式会社 Procédé de fabrication d'élément de conversion photoélectrique organique
KR101878011B1 (ko) * 2011-04-07 2018-08-09 닛샤 가부시키가이샤 그라펜을 주성분으로 하는 투명 도전막을 구비한 전사 시트와 그 제조방법, 및 투명 도전물
CN103460123B (zh) * 2011-04-15 2016-02-10 3M创新有限公司 用于电子显示器的透明电极
CN102208547B (zh) * 2011-04-18 2013-11-20 电子科技大学 一种柔性光电子器件用基板及其制备方法
CN102201549B (zh) * 2011-04-18 2013-08-14 电子科技大学 一种柔性发光器件用基板及其制备方法
CN102195006A (zh) * 2011-04-26 2011-09-21 福州大学 基于azo/石墨烯/azo结构的柔性电极及其制备
US8974900B2 (en) * 2011-05-23 2015-03-10 Carestream Health, Inc. Transparent conductive film with hardcoat layer
US9175183B2 (en) * 2011-05-23 2015-11-03 Carestream Health, Inc. Transparent conductive films, methods, and articles
TWI427644B (zh) * 2011-06-13 2014-02-21 Univ Nat Yunlin Sci & Tech 透明導電膜結構之製造方法
AU2012275284B2 (en) * 2011-06-28 2015-06-11 Innova Dynamics, Inc. Transparent conductors incorporating additives and related manufacturing methods
WO2013006349A1 (fr) * 2011-07-01 2013-01-10 Cambrios Technologies Corporation Réduction de l'anisotropie du revêtement de films conducteurs
KR101327069B1 (ko) 2011-07-28 2013-11-07 엘지이노텍 주식회사 전극 구조체 및 전극 제조 방법
US20140267107A1 (en) 2013-03-15 2014-09-18 Sinovia Technologies Photoactive Transparent Conductive Films
CN104040642B (zh) * 2011-08-24 2016-11-16 宸鸿科技控股有限公司 图案化透明导体和相关制备方法
KR101953180B1 (ko) * 2011-08-26 2019-02-28 더 리젠츠 오브 더 유니버시티 오브 캘리포니아 나노구조화된 투명 도전성 옥사이드 전기변색 소자
KR20130030903A (ko) * 2011-09-20 2013-03-28 엘지이노텍 주식회사 태양전지 및 이의 제조방법
JP5646424B2 (ja) * 2011-09-27 2014-12-24 株式会社東芝 透明電極積層体
JP5583097B2 (ja) * 2011-09-27 2014-09-03 株式会社東芝 透明電極積層体
KR101331112B1 (ko) * 2011-09-28 2013-11-19 (주)바이오니아 탄소나노튜브 및 금속산화물으로 이루어진 나노복합체 및 이의 제조방법
EP2766939B1 (fr) 2011-10-13 2019-04-24 Cambrios Film Solutions Corporation Oled avec électrode incorporant des nanofils métalliques
JP2015501534A (ja) 2011-10-13 2015-01-15 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 電気光学装置用の透明導電体としての溶液プロセスによるナノ粒子−ナノワイヤ複合フィルム
US9279551B2 (en) * 2011-12-05 2016-03-08 Koninklijke Philips N.V. Lighting system
CN104040641A (zh) * 2011-12-07 2014-09-10 杜克大学 铜镍合金纳米导线的合成及其在透明导电膜中的应用
KR20130070729A (ko) * 2011-12-20 2013-06-28 제일모직주식회사 메탈나노와이어 및 탄소나노튜브를 포함하는 적층형 투명전극.
JP6162717B2 (ja) 2011-12-21 2017-07-12 スリーエム イノベイティブ プロパティズ カンパニー 銀ナノワイヤベースの透明な導電性コーティングのレーザーパターニング
EP2794262A4 (fr) 2011-12-22 2015-08-19 3M Innovative Properties Co Articles revêtus de carbone et leurs procédés de fabrication
JP6212050B2 (ja) 2011-12-22 2017-10-11 スリーエム イノベイティブ プロパティズ カンパニー 高い光透過を備えた導電性物品
CN103213350B (zh) * 2012-01-18 2015-07-08 国家纳米科学中心 一种透明导电薄膜及其制备方法
US9917255B2 (en) * 2012-02-03 2018-03-13 Northwestern University Methods of making composite of graphene oxide and nanostructures
US9524806B2 (en) * 2012-02-07 2016-12-20 Purdue Research Foundation Hybrid transparent conducting materials
GB201203511D0 (en) * 2012-02-29 2012-04-11 Ibm Position sensing apparatus
KR101324281B1 (ko) * 2012-03-15 2013-11-01 인하대학교 산학협력단 고유연성을 가지는 산화 그라핀/은 나노와이어 하이브리드를 기반으로 하는 투명전도성 필름
DE102012102319A1 (de) 2012-03-20 2013-09-26 Rent A Scientist Gmbh Nichtlineare Nanodrähte
US9490048B2 (en) * 2012-03-29 2016-11-08 Cam Holding Corporation Electrical contacts in layered structures
JP5836866B2 (ja) * 2012-03-30 2015-12-24 株式会社東芝 炭素電極とその製造方法およびそれを用いた光電変換素子
JP2013211212A (ja) * 2012-03-30 2013-10-10 Toshiba Corp 積層電極とその製造方法およびそれ用いた光電変換素子
US10483104B2 (en) 2012-03-30 2019-11-19 Kabushiki Kaisha Toshiba Method for producing stacked electrode and method for producing photoelectric conversion device
TW201342102A (zh) * 2012-04-06 2013-10-16 Cambrios Technologies Corp 減少光學堆疊之漫反射之系統及方法
FR2989485B1 (fr) * 2012-04-11 2016-02-05 Commissariat Energie Atomique Capteur tactile et procede de fabrication d'un tel capteur
CN102616033A (zh) * 2012-04-13 2012-08-01 中国科学院苏州纳米技术与纳米仿生研究所 一种快速制备高透光性导电图案的方法
CN104303238B (zh) 2012-04-26 2016-11-09 国立大学法人大阪大学 透明导电性墨以及透明导电图案形成方法
KR101388682B1 (ko) * 2012-04-30 2014-04-24 한국교통대학교산학협력단 은 나노와이어 및 그라핀을 이용한 하이브리드 전극 및 이의 제조방법
TWI450821B (zh) * 2012-05-03 2014-09-01 Taiwan Textile Res Inst 具可撓性的透明電極及其製造方法
US20130309613A1 (en) * 2012-05-16 2013-11-21 Corning Incorporated Liquid Based Films
US9086523B2 (en) * 2012-05-29 2015-07-21 The Boeing Company Nanotube signal transmission system
US20130323482A1 (en) * 2012-06-01 2013-12-05 Nuovo Film Inc. Low Haze Transparent Conductive Electrodes and Method of Making the Same
US20140014171A1 (en) * 2012-06-15 2014-01-16 Purdue Research Foundation High optical transparent two-dimensional electronic conducting system and process for generating same
WO2014015284A1 (fr) * 2012-07-20 2014-01-23 The Regents Of The University Of California Dispositifs électroluminescents organiques à efficacité élevée
KR101431705B1 (ko) * 2012-08-29 2014-08-20 (주)탑나노시스 나노와이어-탄소나노튜브 하이브리드 필름 및 이의 제조 방법
US20140060726A1 (en) * 2012-09-05 2014-03-06 Bluestone Global Tech Limited Methods for transferring graphene films and the like between substrates
WO2014052887A2 (fr) 2012-09-27 2014-04-03 Rhodia Operations Procédé de fabrication de nanostructures d'argent et copolymère utile dans un tel procédé
KR20140046923A (ko) * 2012-10-11 2014-04-21 제일모직주식회사 투명 도전체, 이를 제조하기 위한 조성물 및 이를 포함하는 광학표시 장치
KR101991964B1 (ko) * 2012-11-07 2019-06-21 삼성에스디아이 주식회사 코어-쉘 구조를 갖는 나노와이어의 제조방법
KR20140058895A (ko) * 2012-11-07 2014-05-15 삼성정밀화학 주식회사 전도성 고분자를 포함하는 복합체 전극 및 그 제조 방법
CN104919540B (zh) * 2012-11-08 2017-05-10 阿尔卑斯电气株式会社 导电体及其制造方法
KR101486636B1 (ko) * 2012-12-06 2015-01-29 세종대학교산학협력단 광투과 복합필름 및 이의 제조방법
CN104838449B (zh) * 2012-12-07 2018-06-15 3M创新有限公司 导电制品
CN103151394A (zh) * 2012-12-14 2013-06-12 广东志成冠军集团有限公司 薄膜太阳能电池及其制作方法
CN103078036B (zh) * 2013-01-17 2015-11-18 北京工业大学 基于石墨烯薄膜的透明电极的制备方法
KR101364531B1 (ko) * 2013-01-21 2014-02-19 덕산하이메탈(주) 나노 물질층을 포함하는 투명 전극 및 그 제조 방법
JP2016511913A (ja) * 2013-01-22 2016-04-21 カンブリオス テクノロジーズ コーポレイション Esd保護のための高熱安定性を有するナノ構造透明導体
DE102013002855A1 (de) 2013-02-20 2014-08-21 Heraeus Precious Metals Gmbh & Co. Kg Formulierungen aus gewaschenen Silberdrähten und PEDOT
US9717144B2 (en) 2013-02-20 2017-07-25 Tokyo Institute Of Technology Electroconductive nanowire network, and electroconductive substrate and transparent electrode using same, and method for manufacturing electroconductive nanowire network, electroconductive substrate, and transparent electrode
US10468152B2 (en) * 2013-02-21 2019-11-05 Global Graphene Group, Inc. Highly conducting and transparent film and process for producing same
US9530531B2 (en) * 2013-02-21 2016-12-27 Nanotek Instruments, Inc. Process for producing highly conducting and transparent films from graphene oxide-metal nanowire hybrid materials
JP2014165094A (ja) * 2013-02-27 2014-09-08 Nippon Zeon Co Ltd 導電性フィルム、タッチパネル、太陽電池用電極、および太陽電池
US8871296B2 (en) * 2013-03-14 2014-10-28 Nanotek Instruments, Inc. Method for producing conducting and transparent films from combined graphene and conductive nano filaments
US20140262443A1 (en) * 2013-03-14 2014-09-18 Cambrios Technologies Corporation Hybrid patterned nanostructure transparent conductors
US20140272199A1 (en) * 2013-03-14 2014-09-18 Yi-Jun Lin Ultrasonic spray coating of conducting and transparent films from combined graphene and conductive nano filaments
JP5450863B2 (ja) * 2013-03-27 2014-03-26 富士フイルム株式会社 導電層形成用分散物及び透明導電体
US9368248B2 (en) 2013-04-05 2016-06-14 Nuovo Film, Inc. Transparent conductive electrodes comprising metal nanowires, their structure design, and method of making such structures
US9477128B2 (en) * 2013-04-19 2016-10-25 Board Of Regents, The University Of Texas System Graphene/metal nanowire hybrid transparent conductive films
CN104168009B (zh) * 2013-05-17 2018-03-23 光宝电子(广州)有限公司 发光型触控开关装置及发光型触控开关模组
CN103242630B (zh) * 2013-05-20 2015-05-06 嘉兴学院 一种聚对苯二甲酸乙二酯(pet)基电磁屏蔽复合材料及其制备方法
KR101837316B1 (ko) 2013-07-08 2018-03-09 도요보 가부시키가이샤 도전성 페이스트
TW201502653A (zh) * 2013-07-10 2015-01-16 Hon Hai Prec Ind Co Ltd 液晶顯示裝置
KR20150019820A (ko) * 2013-08-16 2015-02-25 일진엘이디(주) 나노와이어를 이용한 질화물 반도체 발광소자
CN103426991A (zh) * 2013-08-23 2013-12-04 厦门大学 金属纳米丝透明欧姆电极的压印方法
JP6308737B2 (ja) 2013-08-26 2018-04-11 デクセリアルズ株式会社 金属ナノワイヤー、分散液、透明導電膜、情報入力装置、及び、電子機器
KR101524069B1 (ko) * 2013-09-16 2015-06-10 덕산하이메탈(주) 나노 물질층을 포함하는 적층형 투명 전극
US9663400B2 (en) * 2013-11-08 2017-05-30 Corning Incorporated Scratch-resistant liquid based coatings for glass
KR102065110B1 (ko) 2013-11-12 2020-02-11 삼성전자주식회사 플렉서블 그래핀 스위칭 소자
US9674947B2 (en) * 2013-12-04 2017-06-06 Samsung Sdi Co., Ltd. Transparent conductor, method for preparing the same, and optical display including the same
KR101514325B1 (ko) * 2013-12-10 2015-04-22 국립대학법인 울산과학기술대학교 산학협력단 전기 방사 방법을 이용한 투명 전극의 제조 방법
KR102162426B1 (ko) * 2013-12-11 2020-10-07 삼성디스플레이 주식회사 터치 패널 및 이의 제조 방법
JP2017510994A (ja) * 2013-12-19 2017-04-13 フラウンホーファー−ゲゼルシャフト・ツール・フェルデルング・デル・アンゲヴァンテン・フォルシュング・アインゲトラーゲネル・フェライン 機能性有機層を含む透明ナノワイヤー電極
US10884311B2 (en) 2013-12-24 2021-01-05 View, Inc. Obscuring bus bars in electrochromic glass structures
WO2015100419A1 (fr) * 2013-12-24 2015-07-02 View, Inc. Assombrissement de barres omnibus dans des structures de vitrage électrochromiques
US11906868B2 (en) 2013-12-24 2024-02-20 View, Inc. Obscuring bus bars in electrochromic glass structures
JP6327870B2 (ja) 2014-01-29 2018-05-23 デクセリアルズ株式会社 金属ナノワイヤー、透明導電膜及びその製造方法、分散液、情報入力装置、並びに、電子機器
SG11201605513TA (en) * 2014-01-31 2016-08-30 Champ Great Int L Corp Tandem organic photovoltaic devices that include a metallic nanostructure recombination layer
CN105900182B (zh) * 2014-01-31 2017-10-27 日本瑞翁株式会社 透明导电膜、色素敏化太阳能电池用光电极及触摸面板以及色素敏化太阳能电池
JP6441576B2 (ja) 2014-02-03 2018-12-19 デクセリアルズ株式会社 透明導電膜及びその製造方法、情報入力装置、並びに、電子機器
KR101586902B1 (ko) 2014-04-09 2016-01-19 인트리 주식회사 나노구조의 패턴을 구비한 광투과성 도전체 및 그 제조방법
GB2526311B (en) * 2014-05-20 2019-06-19 M Solv Ltd Manufacturing a conductive nanowire layer
CN104009141B (zh) * 2014-05-24 2017-10-13 北京工业大学 碳纳米管银纳米线复合电流扩展层发光二极管及其制作方法
JP2016027464A (ja) * 2014-05-30 2016-02-18 株式会社半導体エネルギー研究所 入力装置、情報処理装置
CN104020887A (zh) * 2014-05-30 2014-09-03 南昌欧菲光科技有限公司 触摸屏
TWI486969B (zh) * 2014-06-11 2015-06-01 Nat Univ Tsing Hua 複合導電材料的製作方法及其導電薄膜
KR101536526B1 (ko) * 2014-06-17 2015-07-15 한양대학교 산학협력단 미세 구조체를 갖는 기판 및 그 제조 방법
US9801287B2 (en) 2014-07-09 2017-10-24 Cam Holding Corporation Electrical contacts in layered structures
EP2977993A1 (fr) 2014-07-25 2016-01-27 Heraeus Deutschland GmbH & Co. KG Formulations comprenant des nanofils métalliques et pedot
AU2015299748A1 (en) * 2014-08-07 2017-03-09 Flinders Partners Pty Ltd Transparent electrode materials and methods for forming same
US9927667B2 (en) * 2014-08-11 2018-03-27 Sci Engineered Materials, Inc. Display having a transparent conductive oxide layer comprising metal doped zinc oxide applied by sputtering
US11111396B2 (en) * 2014-10-17 2021-09-07 C3 Nano, Inc. Transparent films with control of light hue using nanoscale colorants
CN104505149A (zh) * 2014-11-19 2015-04-08 东北师范大学 一种叠层透明电极及其制备方法
CN105304209B (zh) * 2014-11-27 2017-02-22 中国科学院金属研究所 一种在彩色滤光片上制备透明导电薄膜的方法
CN104393194A (zh) * 2014-12-10 2015-03-04 京东方科技集团股份有限公司 一种柔性电极、其制作方法、电子皮肤及柔性显示装置
WO2016096895A1 (fr) * 2014-12-16 2016-06-23 Solvay Sa Conducteur transparent comprenant des nanofils métalliques et son procédé de formation
CN104503162A (zh) * 2014-12-24 2015-04-08 深圳市华星光电技术有限公司 具有触控功能的显示面板及其制造方法和复合电极
KR20160084715A (ko) * 2015-01-06 2016-07-14 연세대학교 산학협력단 투명전극 및 그의 제조방법
JP6690528B2 (ja) * 2015-01-14 2020-04-28 東洋紡株式会社 導電性膜
CN104681645B (zh) * 2015-01-23 2016-09-21 华南师范大学 一种基于金属网格和金属纳米线制备复合透明导电电极的方法
KR102320382B1 (ko) 2015-01-28 2021-11-02 삼성디스플레이 주식회사 전자 장치
KR102347960B1 (ko) * 2015-02-03 2022-01-05 삼성전자주식회사 도전체 및 그 제조 방법
TWI564071B (zh) * 2015-02-09 2017-01-01 國立中山大學 結合材料粒子於石墨烯-半導體基材表面之光化學方法及半導體結構
KR101881195B1 (ko) * 2015-04-01 2018-07-23 성균관대학교산학협력단 나노 복합체를 이용한 변형률 감지센서 및 이의 제조방법
KR101701601B1 (ko) * 2015-04-09 2017-02-02 희성전자 주식회사 자기장을 이용한 전기 방사 장치 및 이를 이용한 투명 전극의 제조 방법
KR101689740B1 (ko) * 2015-04-09 2016-12-26 울산과학기술원 드럼 컬렉터를 이용한 전기 방사 장치 및 이를 이용한 투명 전극의 제조 방법
KR101701603B1 (ko) * 2015-04-09 2017-02-02 희성전자 주식회사 전기 방사 장치 및 이를 이용한 투명 전극의 제조 방법
KR101676760B1 (ko) * 2015-04-09 2016-11-16 울산과학기술원 전기장을 이용한 전기 방사 장치 및 이를 이용한 투명 전극의 제조 방법
KR102335116B1 (ko) * 2015-04-13 2021-12-03 삼성디스플레이 주식회사 터치 스크린 패널 및 이의 제조 방법
WO2016172315A1 (fr) * 2015-04-21 2016-10-27 Chasm Technologies, Inc. Film conducteur transparent
KR102431902B1 (ko) * 2015-05-05 2022-08-11 나노-씨, 인크. 다층 투명 전도성 판상 스택의 기계적 보강을 위한 카본 나노튜브계 하이브리드 필름
CN105118836B (zh) * 2015-07-29 2019-04-05 京东方科技集团股份有限公司 具有导电平坦层的阵列基板及其制备方法
KR20170018718A (ko) * 2015-08-10 2017-02-20 삼성전자주식회사 비정질 합금을 이용한 투명 전극 및 그 제조 방법
CN105093638A (zh) * 2015-09-02 2015-11-25 深圳市华科创智技术有限公司 Pdlc智能膜的制备方法及pdlc智能膜
EP3159897A1 (fr) 2015-10-20 2017-04-26 Solvay SA Composition pour former un conducteur transparent et ledit conducteur
CN106611627A (zh) * 2015-10-23 2017-05-03 苏州汉纳材料科技有限公司 高质量碳纳米管透明导电膜及其制备方法与应用
CN105810305B (zh) * 2015-10-23 2017-11-24 苏州汉纳材料科技有限公司 柔性CNTs/金属纳米线复合透明导电膜、其制备方法与应用
KR102581899B1 (ko) * 2015-11-04 2023-09-21 삼성전자주식회사 투명 전극 및 이를 포함하는 소자
US10147512B2 (en) 2015-12-09 2018-12-04 C3Nano Inc. Methods for synthesizing silver nanoplates and noble metal coated silver nanoplates and their use in transparent films for control of light hue
US9857930B2 (en) 2015-12-16 2018-01-02 3M Innovative Properties Company Transparent conductive component with interconnect circuit tab comprising cured organic polymeric material
CN105575477B (zh) * 2016-01-27 2017-11-28 深圳先进技术研究院 一种提高银纳米线柔性透明导电膜导电性的方法
ES2632247B1 (es) * 2016-03-11 2020-06-03 Garcia Guerrero Jorge Cable inteligente de fibra óptica y fibras de nanotubos de carbono
WO2017159537A1 (fr) * 2016-03-14 2017-09-21 ユニチカ株式会社 Nanofil, procédé de production de nanofils, dispersion de nanofil, et film électroconducteur transparent
KR102004025B1 (ko) * 2016-03-15 2019-07-25 삼성에스디아이 주식회사 투명 도전체 및 이를 포함하는 디스플레이 장치
CN107293591B (zh) * 2016-04-11 2020-03-31 华邦电子股份有限公司 印刷线路、薄膜晶体管及其制造方法
US20180004318A1 (en) * 2016-07-01 2018-01-04 Khaled Ahmed Flexible sensor
CN106205876A (zh) * 2016-08-31 2016-12-07 福建农林大学 一种柔性纤维素基透明导电材料的制备方法
KR20180044618A (ko) * 2016-10-24 2018-05-03 현대자동차주식회사 투명 전극 필름 및 이를 포함하는 터치 패널
CN106526991A (zh) * 2016-12-02 2017-03-22 深圳市华星光电技术有限公司 电极制作方法及液晶显示面板
EP3340253A1 (fr) 2016-12-22 2018-06-27 Solvay SA Ensemble électrode résistant aux uv
EP3340252A1 (fr) 2016-12-22 2018-06-27 Solvay SA Ensemble d'électrode
CN108630708A (zh) 2017-03-15 2018-10-09 京东方科技集团股份有限公司 导电基板及其制作方法、显示装置
CN108621753A (zh) * 2017-03-24 2018-10-09 凯姆控股有限公司 平面加热结构
JP6978227B2 (ja) * 2017-05-31 2021-12-08 日東電工株式会社 調光フィルム
WO2019050245A1 (fr) * 2017-09-05 2019-03-14 서울대학교산학협력단 Bioélectrode et son procédé de fabrication
JP6782211B2 (ja) 2017-09-08 2020-11-11 株式会社東芝 透明電極、それを用いた素子、および素子の製造方法
KR101987387B1 (ko) * 2017-09-27 2019-06-10 한국화학연구원 광소결 전도성 전극 및 이의 제조방법
CN109822996A (zh) * 2017-11-23 2019-05-31 宸美(厦门)光电有限公司 电控变色车用玻璃
CN108336191B (zh) * 2017-12-08 2019-08-02 华灿光电(苏州)有限公司 一种发光二极管芯片及制备方法
DE102018200659B4 (de) * 2018-01-16 2020-11-05 Continental Automotive Gmbh Mehrfachschichtanordnung für eine flächig ausgestaltete schaltbare Verglasung, Verglasung und Fahrzeug
CN112088410B (zh) * 2018-03-09 2023-08-08 大日本印刷株式会社 导电性膜、传感器、触控面板和图像显示装置
KR102003427B1 (ko) * 2018-03-28 2019-07-24 전북대학교산학협력단 섬유기반 접힘 투명 전극을 이용한 유연 액정 필름 및 이의 제조방법
CN110676341B (zh) * 2018-07-03 2021-06-25 清华大学 半导体结构、光电器件、光探测器及光探测仪
CN108598288A (zh) * 2018-07-10 2018-09-28 上海大学 一种复合多功能oled电极及其制备方法
CN108693597A (zh) * 2018-08-01 2018-10-23 京东方科技集团股份有限公司 导光结构及其制造方法、背光模组、液晶显示装置
TWI684519B (zh) * 2018-08-20 2020-02-11 郭明智 複合導電材料
KR101996833B1 (ko) * 2018-09-21 2019-10-01 현대자동차 주식회사 투명 전극 필름 및 이를 포함하는 터치 패널
CN110083279A (zh) * 2019-05-07 2019-08-02 业成科技(成都)有限公司 透明导电材料、触控结构及触控装置
CN110333793B (zh) * 2019-05-09 2022-12-09 业成科技(成都)有限公司 可挠触控结构
CN110429202A (zh) * 2019-07-18 2019-11-08 武汉华星光电半导体显示技术有限公司 一种柔性oled显示面板、制作方法及智能穿戴设备
CN111112862A (zh) * 2019-12-16 2020-05-08 顾氏纳米科技(浙江)有限公司 一种化学焊接银纳米线的方法
US11947233B2 (en) 2019-12-30 2024-04-02 Sage Electrochromics, Inc. Controlled randomization of electrochromic ablation patterns
CN111416058B (zh) * 2020-04-03 2024-04-19 苏州星烁纳米科技有限公司 一种导电薄膜、显示装置和显示装置的制作方法
CN113650373B (zh) * 2020-05-12 2023-09-08 京东方科技集团股份有限公司 一种触控层及其制备方法,以及触控装置
WO2022038900A1 (fr) * 2020-08-19 2022-02-24 東洋紡株式会社 Film conducteur transparent
CN114171241A (zh) * 2020-12-22 2022-03-11 苏州星烁纳米科技有限公司 一种导电结构及其制备方法、由其制备的电子设备
CN114694877A (zh) * 2020-12-28 2022-07-01 乐凯华光印刷科技有限公司 一种纳米银线复合透明导电膜
JP2022122545A (ja) * 2021-02-10 2022-08-23 日東電工株式会社 透明導電性フィルム

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040256318A1 (en) * 2001-10-26 2004-12-23 Kazuhiro Iida Separating device, analysis system separation method and method of manufacture of separating device

Family Cites Families (224)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2426318A (en) * 1945-11-15 1947-08-26 Stanolind Oil & Gas Co Inhibiting corrosion
US3164308A (en) 1961-02-28 1965-01-05 Marcovitch Isaac Containers for liquified fuel gas
DE3368092D1 (en) 1982-07-30 1987-01-15 Mishima Paper Co Ltd Conductive film for packaging
FR2537898A1 (fr) * 1982-12-21 1984-06-22 Univ Paris Procede de reduction de composes metalliques par les polyols, et poudres metalliques obtenues par ce procede
DE3479793D1 (en) 1983-08-01 1989-10-26 Allied Signal Inc Oriented film laminates of polyamides and ethylene vinyl alcohol
US4523976A (en) * 1984-07-02 1985-06-18 Motorola, Inc. Method for forming semiconductor devices
US4780371A (en) 1986-02-24 1988-10-25 International Business Machines Corporation Electrically conductive composition and use thereof
JPS63229061A (ja) * 1987-03-18 1988-09-22 テルモ株式会社 膜型人工肺とその製造方法
DE3870012D1 (de) * 1987-04-03 1992-05-21 Ciba Geigy Ag Antistatische und elektrisch leitende polymere und formmassen.
JP2547765B2 (ja) * 1987-04-07 1996-10-23 株式会社日立製作所 電子機器用電磁波シ−ルド構造体
US5292784A (en) 1989-05-23 1994-03-08 Ganns Financial Group, Inc., Dba Glare Tech Industries Incorporated Anti-glare coating for reflective-transmissive surfaces and method
US5063125A (en) 1989-12-29 1991-11-05 Xerox Corporation Electrically conductive layer for electrical devices
US5716663A (en) 1990-02-09 1998-02-10 Toranaga Technologies Multilayer printed circuit
CA2038785C (fr) 1990-03-27 1998-09-29 Atsushi Oyamatsu Support d'enregistrement magneto-optique
US5225244A (en) * 1990-12-17 1993-07-06 Allied-Signal Inc. Polymeric anti-reflection coatings and coated articles
US5165985A (en) * 1991-06-28 1992-11-24 Minnesota Mining And Manufacturing Company Method of making a flexible, transparent film for electrostatic shielding
US5198267A (en) * 1991-09-20 1993-03-30 Allied-Signal Inc. Fluoropolymer blend anti-reflection coatings and coated articles
US5270364A (en) 1991-09-24 1993-12-14 Chomerics, Inc. Corrosion resistant metallic fillers and compositions containing same
WO1993012186A1 (fr) * 1991-12-16 1993-06-24 Peter Graham Ibbotson Formulation antiaveuglante et/ou antireflet
EP0554220A1 (fr) 1992-01-29 1993-08-04 Ciba-Geigy Ag Complexes à transfert de charges contenant des ferrocènes, leur préparation et leur application
EP0583220B1 (fr) 1992-07-15 1996-11-20 Ciba-Geigy Ag Matériau revêtu, sa production et son utilisation
EP0588759A1 (fr) * 1992-08-20 1994-03-23 Ciba-Geigy Ag Dérivés de dithiopentacène, leur préparation et leur utilisation dans des complexes de transfer de charge
KR100214428B1 (ko) * 1993-06-30 1999-08-02 후지무라 마사지카, 아키모토 유미 적외선차단재와 그것에 사용하는 적외선차단분말
US5415815A (en) 1993-07-14 1995-05-16 Bruno; Art Film for glare reduction
US5460701A (en) 1993-07-27 1995-10-24 Nanophase Technologies Corporation Method of making nanostructured materials
JPH07268065A (ja) 1993-11-17 1995-10-17 Sophia Syst:Kk 紫外線硬化型の無溶媒導電性ポリマー材料
US5759230A (en) 1995-11-30 1998-06-02 The United States Of America As Represented By The Secretary Of The Navy Nanostructured metallic powders and films via an alcoholic solvent process
US5897945A (en) 1996-02-26 1999-04-27 President And Fellows Of Harvard College Metal oxide nanorods
JP2984595B2 (ja) 1996-03-01 1999-11-29 キヤノン株式会社 光起電力素子
IT1282387B1 (it) 1996-04-30 1998-03-20 Videocolor Spa Rivestimento antistatico,antiabbagliante,per una superficie a riflessione-trasmissione
US5820957A (en) 1996-05-06 1998-10-13 Minnesota Mining And Manufacturing Company Anti-reflective films and methods
JPH1017325A (ja) 1996-07-03 1998-01-20 Sumitomo Metal Mining Co Ltd 酸化インジウム粉末及びその製造方法
JPH1046382A (ja) 1996-07-26 1998-02-17 Mitsubishi Materials Corp 微細金属繊維の製造方法及び該繊維を用いた導電性塗料
US5788738A (en) 1996-09-03 1998-08-04 Nanomaterials Research Corporation Method of producing nanoscale powders by quenching of vapors
US6344271B1 (en) 1998-11-06 2002-02-05 Nanoenergy Corporation Materials and products using nanostructured non-stoichiometric substances
US5851507A (en) 1996-09-03 1998-12-22 Nanomaterials Research Corporation Integrated thermal process for the continuous synthesis of nanoscale powders
US5905000A (en) 1996-09-03 1999-05-18 Nanomaterials Research Corporation Nanostructured ion conducting solid electrolytes
US6202471B1 (en) 1997-10-10 2001-03-20 Nanomaterials Research Corporation Low-cost multilaminate sensors
US6933331B2 (en) 1998-05-22 2005-08-23 Nanoproducts Corporation Nanotechnology for drug delivery, contrast agents and biomedical implants
US5952040A (en) 1996-10-11 1999-09-14 Nanomaterials Research Corporation Passive electronic components from nano-precision engineered materials
US5719016A (en) 1996-11-12 1998-02-17 Eastman Kodak Company Imaging elements comprising an electrically conductive layer containing acicular metal-containing particles
US5731119A (en) 1996-11-12 1998-03-24 Eastman Kodak Company Imaging element comprising an electrically conductive layer containing acicular metal oxide particles and a transparent magnetic recording layer
JP3398587B2 (ja) 1996-12-10 2003-04-21 タキロン株式会社 成形可能な制電性樹脂成形品
US6379745B1 (en) 1997-02-20 2002-04-30 Parelec, Inc. Low temperature method and compositions for producing electrical conductors
US6001163A (en) 1997-04-17 1999-12-14 Sdc Coatings, Inc. Composition for providing an abrasion resistant coating on a substrate
US6045925A (en) 1997-08-05 2000-04-04 Kansas State University Research Foundation Encapsulated nanometer magnetic particles
TW505685B (en) 1997-09-05 2002-10-11 Mitsubishi Materials Corp Transparent conductive film and composition for forming same
US6514453B2 (en) 1997-10-21 2003-02-04 Nanoproducts Corporation Thermal sensors prepared from nanostructureed powders
JP2972702B2 (ja) 1998-03-17 1999-11-08 静岡日本電気株式会社 ペン入力型携帯情報端末機
US5867945A (en) 1998-06-04 1999-02-09 Scafidi; Stephen J. Self-cleaning gutter
US6416818B1 (en) 1998-08-17 2002-07-09 Nanophase Technologies Corporation Compositions for forming transparent conductive nanoparticle coatings and process of preparation therefor
US6294401B1 (en) 1998-08-19 2001-09-25 Massachusetts Institute Of Technology Nanoparticle-based electrical, chemical, and mechanical structures and methods of making same
US6241451B1 (en) 1998-09-08 2001-06-05 Knight Manufacturing Corp. Distributor apparatus for spreading materials
US6541539B1 (en) 1998-11-04 2003-04-01 President And Fellows Of Harvard College Hierarchically ordered porous oxides
US6855202B2 (en) 2001-11-30 2005-02-15 The Regents Of The University Of California Shaped nanocrystal particles and methods for making the same
US6274412B1 (en) 1998-12-21 2001-08-14 Parelec, Inc. Material and method for printing high conductivity electrical conductors and other components on thin film transistor arrays
US6265466B1 (en) 1999-02-12 2001-07-24 Eikos, Inc. Electromagnetic shielding composite comprising nanotubes
JP3909791B2 (ja) 1999-04-19 2007-04-25 共同印刷株式会社 透明導電膜の転写方法
US6342097B1 (en) 1999-04-23 2002-01-29 Sdc Coatings, Inc. Composition for providing an abrasion resistant coating on a substrate with a matched refractive index and controlled tintability
US6881604B2 (en) 1999-05-25 2005-04-19 Forskarpatent I Uppsala Ab Method for manufacturing nanostructured thin film electrodes
US6536106B1 (en) 1999-06-30 2003-03-25 The Penn State Research Foundation Electric field assisted assembly process
WO2001003208A1 (fr) 1999-07-02 2001-01-11 President And Fellows Of Harvard College Dispositifs s nanoscopiques a base de fils, ensembles ainsi formes et procedes de fabrication y relatifs
JP4358936B2 (ja) * 1999-07-15 2009-11-04 株式会社半導体エネルギー研究所 表示装置、ゴーグル型表示装置、表示装置の作製方法及びゴーグル型表示装置の作製方法
JP3882419B2 (ja) 1999-09-20 2007-02-14 旭硝子株式会社 導電膜形成用塗布液およびその用途
ATE459488T1 (de) 1999-09-28 2010-03-15 Kyodo Printing Co Ltd Übertragungskörper und verwendungsverfahren
EP1230276B1 (fr) 1999-10-20 2005-12-14 Ciba SC Holding AG Formulations de photoamorceurs
JP2002083518A (ja) 1999-11-25 2002-03-22 Sumitomo Metal Mining Co Ltd 透明導電性基材とその製造方法並びにこの透明導電性基材が適用された表示装置、および透明導電層形成用塗液とその製造方法
NL1016815C2 (nl) 1999-12-15 2002-05-14 Ciba Sc Holding Ag Oximester-fotoinitiatoren.
WO2001044132A1 (fr) 1999-12-17 2001-06-21 Asahi Glass Company, Limited Composition de dispersion de particules ultrafines, composition de couche de liaison intercouche pour verre feuillete, couche de liaison intercouche, et verre feuillete
JP2001205600A (ja) 2000-01-27 2001-07-31 Canon Inc 微細構造体及びその製造方法
CA2404296A1 (fr) 2000-03-22 2001-09-27 University Of Massachusetts Matrices de cylindres nanometriques
FR2807052B1 (fr) 2000-04-03 2003-08-15 Clariant France Sa Compositions silico-acryliques, leur procede de preparation et leur utilisation
US6773823B2 (en) 2000-04-07 2004-08-10 University Of New Orleans Research And Technology Foundation, Inc. Sequential synthesis of core-shell nanoparticles using reverse micelles
JP2001291431A (ja) 2000-04-10 2001-10-19 Jsr Corp 異方導電性シート用組成物、異方導電性シート、その製造方法および異方導電性シートを用いた接点構造
JP4077596B2 (ja) 2000-05-31 2008-04-16 中島工業株式会社 低反射層を有する転写材及びこれを用いた成型品の製造方法
DE60117990D1 (de) 2000-06-30 2006-05-11 Ngimat Co Verfahren zur abscheidung von materialien
JP4788852B2 (ja) 2000-07-25 2011-10-05 住友金属鉱山株式会社 透明導電性基材とその製造方法およびこの製造方法に用いられる透明コート層形成用塗布液と透明導電性基材が適用された表示装置
EP1361907B1 (fr) 2000-08-15 2007-09-19 Hammerhead Design and Development, Inc. Port d'acces gastrique
AU2002220566B8 (en) 2000-09-25 2007-09-13 Chemetall Gmbh Method for pretreating and coating metal surfaces, prior to forming, with a paint-like coating and use of substrates so coated
GB0025016D0 (en) 2000-10-12 2000-11-29 Micromass Ltd Method nad apparatus for mass spectrometry
EP1394817A1 (fr) 2000-11-21 2004-03-03 Nissan Chemical Industries Ltd. Particules d'oxyde électroconductible et procédé pour leur fabrication
WO2002046507A2 (fr) 2000-12-04 2002-06-13 Ciba Specialty Chemicals Holding Inc. Sels onium et utilisations en tant qu'acides latents
EP2233606B1 (fr) 2000-12-12 2013-02-13 Konica Corporation Dispositif de décharge plasma
US6744425B2 (en) 2000-12-26 2004-06-01 Bridgestone Corporation Transparent electroconductive film
US6444495B1 (en) 2001-01-11 2002-09-03 Honeywell International, Inc. Dielectric films for narrow gap-fill applications
JP3560333B2 (ja) 2001-03-08 2004-09-02 独立行政法人 科学技術振興機構 金属ナノワイヤー及びその製造方法
KR20040030553A (ko) 2001-03-26 2004-04-09 에이코스 인코포레이티드 탄소 나노튜브를 함유하는 코팅막
MXPA03008935A (es) 2001-03-30 2004-06-30 Univ California Metodos de fabricacion de nanoestructuras y nanocables y dispositivos fabricados a partir de ellos.
JP2002322558A (ja) 2001-04-25 2002-11-08 Konica Corp 薄膜形成方法、光学フィルム、偏光板及び画像表示装置
US7147687B2 (en) 2001-05-25 2006-12-12 Nanosphere, Inc. Non-alloying core shell nanoparticles
AU2002239726A1 (en) 2001-05-25 2002-12-09 Northwestern University Non-alloying core shell nanoparticles
US6697881B2 (en) 2001-05-29 2004-02-24 Hewlett-Packard Development Company, L.P. Method and system for efficient format, read, write, and initial copy processing involving sparse logical units
US20030148380A1 (en) 2001-06-05 2003-08-07 Belcher Angela M. Molecular recognition of materials
US20050164515A9 (en) 2001-06-05 2005-07-28 Belcher Angela M. Biological control of nanoparticle nucleation, shape and crystal phase
JP2005500648A (ja) 2001-06-08 2005-01-06 エイコス・インコーポレーテッド ナノ複合材料誘電体
US6706402B2 (en) 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
US6835591B2 (en) 2001-07-25 2004-12-28 Nantero, Inc. Methods of nanotube films and articles
WO2003013199A2 (fr) 2001-07-27 2003-02-13 Eikos, Inc. Revetements conformes contenant des nanotubes de carbone
US6934001B2 (en) 2001-08-13 2005-08-23 Sharp Laboratories Of America, Inc. Structure and method for supporting a flexible substrate
KR100438408B1 (ko) 2001-08-16 2004-07-02 한국과학기술원 금속간의 치환 반응을 이용한 코어-쉘 구조 및 혼합된합금 구조의 금속 나노 입자의 제조 방법과 그 응용
ITTO20020033A1 (it) 2002-01-11 2003-07-11 Fiat Ricerche Dispositivo elettro-luminescente.
JPWO2003068674A1 (ja) 2002-02-15 2005-06-02 独立行政法人科学技術振興機構 貴金属ナノワイヤー構造物とその製造方法
EP1339082A1 (fr) 2002-02-25 2003-08-27 Asahi Glass Company Ltd. Film résistant aux chocs pour panneau d'affichage plat, et panneau d'affichage plat
JP4556204B2 (ja) 2003-02-06 2010-10-06 三菱マテリアル株式会社 金属ナノ繊維含有組成物およびその用途
US6872645B2 (en) 2002-04-02 2005-03-29 Nanosys, Inc. Methods of positioning and/or orienting nanostructures
US6946410B2 (en) 2002-04-05 2005-09-20 E. I. Du Pont De Nemours And Company Method for providing nano-structures of uniform length
WO2004034421A2 (fr) 2002-05-10 2004-04-22 The Trustees Of Columbia University In The City Of New York Procede de depot de films de nanoparticules a l'aide de champ electrique
TWI360098B (en) * 2002-05-17 2012-03-11 Semiconductor Energy Lab Display apparatus and driving method thereof
US6988925B2 (en) * 2002-05-21 2006-01-24 Eikos, Inc. Method for patterning carbon nanotube coating and carbon nanotube wiring
AU2003241128A1 (en) 2002-06-13 2003-12-31 Nanopowders Industries Ltd. A method for the production of conductive and transparent nano-coatings and nano-inks and nano-powder coatings and inks produced thereby
JP3606855B2 (ja) * 2002-06-28 2005-01-05 ドン ウン インターナショナル カンパニー リミテッド 炭素ナノ粒子の製造方法
JP3842177B2 (ja) * 2002-07-03 2006-11-08 独立行政法人科学技術振興機構 貴金属ナノチューブ及びその製造方法
JP2004035962A (ja) 2002-07-04 2004-02-05 Toyota Motor Corp 金属ナノチューブの製造法
JP2004055298A (ja) 2002-07-18 2004-02-19 Catalysts & Chem Ind Co Ltd 透明導電性被膜形成用塗布液、および透明導電性被膜付基材、表示装置
JP4134313B2 (ja) 2002-07-24 2008-08-20 Dowaエレクトロニクス株式会社 導電性粉末の製造方法
JP4266732B2 (ja) 2002-08-30 2009-05-20 キヤノン株式会社 積層型回折光学素子
AU2003301298A1 (en) 2002-09-04 2004-05-04 Board Of Regents, University Of Texas System Composition, method and use of bi-functional biomaterials
TW200425530A (en) * 2002-09-05 2004-11-16 Nanosys Inc Nanostructure and nanocomposite based compositions and photovoltaic devices
US7572393B2 (en) * 2002-09-05 2009-08-11 Nanosys Inc. Organic species that facilitate charge transfer to or from nanostructures
CN100584921C (zh) 2002-09-05 2010-01-27 奈米系统股份有限公司 促进电荷转移至纳米结构或自纳米结构转移出电荷的有机物
JP4134314B2 (ja) 2002-09-13 2008-08-20 Dowaエレクトロニクス株式会社 導電性粉末の製造方法
US20050064508A1 (en) 2003-09-22 2005-03-24 Semzyme Peptide mediated synthesis of metallic and magnetic materials
US7051945B2 (en) 2002-09-30 2006-05-30 Nanosys, Inc Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
US7067867B2 (en) 2002-09-30 2006-06-27 Nanosys, Inc. Large-area nonenabled macroelectronic substrates and uses therefor
US7135728B2 (en) 2002-09-30 2006-11-14 Nanosys, Inc. Large-area nanoenabled macroelectronic substrates and uses therefor
US7560160B2 (en) 2002-11-25 2009-07-14 Materials Modification, Inc. Multifunctional particulate material, fluid, and composition
US6949931B2 (en) 2002-11-26 2005-09-27 Honeywell International Inc. Nanotube sensor
JP3972093B2 (ja) 2002-12-04 2007-09-05 独立行政法人物質・材料研究機構 β−Ga2O3ナノウイスカーとその製造方法
US20040265550A1 (en) * 2002-12-06 2004-12-30 Glatkowski Paul J. Optically transparent nanostructured electrical conductors
JP4341005B2 (ja) 2002-12-17 2009-10-07 三菱マテリアル株式会社 金属ナノワイヤー含有組成物および電磁波遮蔽フィルター
US6975067B2 (en) 2002-12-19 2005-12-13 3M Innovative Properties Company Organic electroluminescent device and encapsulation method
JP2004196981A (ja) 2002-12-19 2004-07-15 Toyobo Co Ltd 表面導電性樹脂成形体
KR100502821B1 (ko) 2002-12-26 2005-07-22 이호영 구리산화물 또는 구리 나노와이어로 이루어진 전자방출팁의 저온 형성 방법 및 이 방법에 의해 제조된 전자방출팁을 포함하는 디스플레이 장치 또는 광원
JP2007112133A (ja) 2003-01-30 2007-05-10 Takiron Co Ltd 導電性成形体
JP2004230690A (ja) 2003-01-30 2004-08-19 Takiron Co Ltd 制電性透明樹脂板
US20060257638A1 (en) 2003-01-30 2006-11-16 Glatkowski Paul J Articles with dispersed conductive coatings
JP4471346B2 (ja) 2003-01-31 2010-06-02 タキロン株式会社 電磁波シールド体
JP2004241228A (ja) * 2003-02-05 2004-08-26 Toin Gakuen プラスチックフィルム電極及びそれを用いた光電池
JP2004253326A (ja) 2003-02-21 2004-09-09 Toyobo Co Ltd 導電性フイルム
JP2004256702A (ja) 2003-02-26 2004-09-16 Toyobo Co Ltd 導電性塗料
WO2004083290A2 (fr) 2003-03-17 2004-09-30 University Of Rochester Nanoparticules magnetiques a coeur et a coque et materiaux composites formes a partir de ces nanoparticules
US6916842B2 (en) 2003-03-24 2005-07-12 E. I. Du Pont De Nemours And Company Production of 5-methyl-n-(methyl aryl)-2-pyrrolidone, 5-methyl-n-(methyl cycloalkyl)-2-pyrrolidone and 5-methyl-n-alkyl-2-pyrrolidone by reductive amination of levulinic acid esters with cyano compounds
US7521851B2 (en) * 2003-03-24 2009-04-21 Zhidan L Tolt Electron emitting composite based on regulated nano-structures and a cold electron source using the composite
US6936761B2 (en) 2003-03-29 2005-08-30 Nanosolar, Inc. Transparent electrode, optoelectronic apparatus and devices
CN1442872A (zh) * 2003-04-17 2003-09-17 上海交通大学 多层纳米透明导电膜及其制备方法
TW200503611A (en) * 2003-04-28 2005-01-16 Takiron Co Electromagnetic wave shielding light diffusion sheet
TWI250202B (en) 2003-05-13 2006-03-01 Eternal Chemical Co Ltd Process and slurry for chemical mechanical polishing
US7033416B2 (en) 2003-05-22 2006-04-25 The United States Of America As Represented By The Secretary Of The Navy Low temperature synthesis of metallic nanoparticles
US20070128905A1 (en) * 2003-06-12 2007-06-07 Stuart Speakman Transparent conducting structures and methods of production thereof
CN100395283C (zh) 2003-07-04 2008-06-18 日东电工株式会社 导电纤维素基薄膜
JP2007501525A (ja) 2003-08-04 2007-01-25 ナノシス・インコーポレイテッド ナノワイヤ複合体およびこれらに由来する電子基板を作製するためのシステムおよび方法
KR100861899B1 (ko) 2003-09-05 2008-10-09 미쓰비시 마테리알 가부시키가이샤 금속 미립자, 그것을 함유하는 조성물 및 금속 미립자 제조방법
US7416993B2 (en) 2003-09-08 2008-08-26 Nantero, Inc. Patterned nanowire articles on a substrate and methods of making the same
US7062848B2 (en) 2003-09-18 2006-06-20 Hewlett-Packard Development Company, L.P. Printable compositions having anisometric nanostructures for use in printed electronics
US7067328B2 (en) 2003-09-25 2006-06-27 Nanosys, Inc. Methods, devices and compositions for depositing and orienting nanostructures
JP2005103723A (ja) 2003-10-01 2005-04-21 National Institute Of Advanced Industrial & Technology 金属ナノワイヤーの単結晶化方法及び装置
US6982206B1 (en) 2003-10-02 2006-01-03 Lsi Logic Corporation Mechanism for improving the structural integrity of low-k films
EP1682568A4 (fr) 2003-10-15 2009-10-28 Univ Texas Utilisation de biomateriaux multifonctionnels comme echafaudages dans des applications electroniques, optiques, magnetiques, semi-conductrices et biotechnologiques
KR100570206B1 (ko) 2003-10-15 2006-04-12 주식회사 하이닉스반도체 유기 반사방지막용 광 흡수제 중합체 및 이의 제조 방법과상기 중합체를 포함하는 유기 반사 방지막 조성물
KR100570634B1 (ko) 2003-10-16 2006-04-12 한국전자통신연구원 탄소나노튜브와 금속분말 혼성 복합에 의해 제조된 전자파차폐재
JP4374439B2 (ja) 2003-10-24 2009-12-02 国立大学法人京都大学 金属ナノチューブ製造装置および金属ナノチューブの製造方法
US6896739B1 (en) 2003-12-03 2005-05-24 For Your Ease Only, Inc. Anti-tarnish aqueous treatment
EP1541528A1 (fr) * 2003-12-08 2005-06-15 Institut Jozef Stefan Polymère quasi-unidimensionnel à base de composés de chalcogénures et d'halogénide de métaux
JP2005181392A (ja) 2003-12-16 2005-07-07 Canon Inc 光学系
JP4807933B2 (ja) * 2003-12-17 2011-11-02 株式会社アルバック 透明導電膜の形成方法及び透明電極
US20070158642A1 (en) 2003-12-19 2007-07-12 Regents Of The University Of California Active electronic devices with nanowire composite components
TWI243004B (en) 2003-12-31 2005-11-01 Ind Tech Res Inst Method for manufacturing low-temperature highly conductive layer and its structure
US7923109B2 (en) 2004-01-05 2011-04-12 Board Of Regents, The University Of Texas System Inorganic nanowires
US20050165120A1 (en) 2004-01-22 2005-07-28 Ashavani Kumar Process for phase transfer of hydrophobic nanoparticles
KR100708644B1 (ko) 2004-02-26 2007-04-17 삼성에스디아이 주식회사 박막 트랜지스터, 이를 구비한 평판 표시장치, 박막트랜지스터의 제조방법, 평판 표시장치의 제조방법, 및도너 시트의 제조방법
US7381579B2 (en) * 2004-02-26 2008-06-03 Samsung Sdi Co., Ltd. Donor sheet, method of manufacturing the same, method of manufacturing TFT using the donor sheet, and method of manufacturing flat panel display device using the donor sheet
JP2005239481A (ja) 2004-02-26 2005-09-08 Nagoya Institute Of Technology 金属内包カーボンナノチューブ凝集体、その製造方法、金属内包カーボンナノチューブ、金属ナノワイヤおよびその製造方法
JP2005277405A (ja) 2004-02-27 2005-10-06 Takiron Co Ltd 画像表示装置用透光性ノイズ防止成形体
JP2005302695A (ja) * 2004-03-18 2005-10-27 Toyota Central Res & Dev Lab Inc 光電極及びこれを備えた色素増感型太陽電池
JP2005311330A (ja) 2004-03-22 2005-11-04 Takiron Co Ltd 電波吸収体
JP2005281357A (ja) 2004-03-29 2005-10-13 Koyo Sangyo Co Ltd 導電性塗料
JP2005335054A (ja) 2004-04-27 2005-12-08 Japan Science & Technology Agency 金属ナノワイヤー及びその製造方法
JP4491776B2 (ja) 2004-04-28 2010-06-30 三菱マテリアル株式会社 導電性ペースト等の製造方法
JP4524745B2 (ja) 2004-04-28 2010-08-18 三菱マテリアル株式会社 金属ナノワイヤー含有導電性材料およびその用途
JP2006049843A (ja) 2004-06-29 2006-02-16 Takiron Co Ltd 画像表示装置用制電性成形体
US7255796B2 (en) 2004-07-08 2007-08-14 General Electric Company Method of preventing hydrogen sulfide odor generation in an aqueous medium
US7527668B2 (en) 2004-07-08 2009-05-05 Mitsubishi Materials Corporation Method for manufacturing metal fine particles, metal fine particles manufactured thereby, and composition, light absorbing material and applied products containing the same
JP2006035773A (ja) 2004-07-29 2006-02-09 Takiron Co Ltd 粘接着性導電成形体
JP2006035771A (ja) 2004-07-29 2006-02-09 Takiron Co Ltd 導電層転写シート
JP4257429B2 (ja) 2004-09-13 2009-04-22 国立大学法人東北大学 原子の拡散を制御することによる金属ナノワイヤの製造方法およびこの方法により製造する金属ナノワイヤ
JP4888119B2 (ja) * 2004-09-13 2012-02-29 住友金属鉱山株式会社 透明導電膜及びその製造方法、並びに透明導電性基材、発光デバイス
US20060070559A1 (en) 2004-09-30 2006-04-06 Incredible Technologies, Inc. Unitary currency/credit card unit
JP4372654B2 (ja) 2004-09-30 2009-11-25 住友大阪セメント株式会社 棒状導電性錫含有酸化インジウム微粉末の製造方法
JP4372653B2 (ja) 2004-09-30 2009-11-25 住友大阪セメント株式会社 棒状導電性錫含有酸化インジウム微粉末の製造方法
US7270694B2 (en) 2004-10-05 2007-09-18 Xerox Corporation Stabilized silver nanoparticles and their use
WO2006124055A2 (fr) 2004-10-12 2006-11-23 Nanosys, Inc. Procedes en couches organiques completement integrees destines a la fabrication de materiel electronique en plastique se basant sur des polymeres conducteurs et sur des nanofils semi-conducteurs
JP2006111675A (ja) 2004-10-13 2006-04-27 Mitsubishi Materials Corp 金属ナノロッド配向組成物およびその用途
JP2006128233A (ja) * 2004-10-27 2006-05-18 Hitachi Ltd 半導体材料および電界効果トランジスタとそれらの製造方法
JP2006133528A (ja) 2004-11-05 2006-05-25 Takiron Co Ltd 制電性光拡散シート
KR100661116B1 (ko) * 2004-11-22 2006-12-22 가부시키가이샤후지쿠라 전극, 광전 변환 소자 및 색소 증감 태양 전지
US7349045B2 (en) 2004-11-24 2008-03-25 Chunghwa Picture Tubes, Ltd. Displacement-designed color filter structure and method of forming the same
CN1842741B (zh) 2004-12-03 2010-11-24 东京应化工业株式会社 化学放大型光致抗蚀剂组合物、光致抗蚀剂层层叠体、光致抗蚀剂组合物的制造方法、光致抗蚀图案的制造方法以及连接端子的制造方法
JP4665499B2 (ja) 2004-12-10 2011-04-06 三菱マテリアル株式会社 金属微粒子とその製造方法とその含有組成物ならびにその用途
JP2006171336A (ja) 2004-12-15 2006-06-29 Takiron Co Ltd 画像表示用透明電極体および画像表示装置
TWI246103B (en) * 2004-12-22 2005-12-21 Powertip Technology Corp Carbon nanotube substrate structure and the manufacturing method thereof
WO2007061428A2 (fr) 2004-12-27 2007-05-31 The Regents Of The University Of California Composants et dispositifs formes a l'aide de materiaux a l'echelle nanometrique et procedes de production
JP2008076416A (ja) 2004-12-27 2008-04-03 Sharp Corp 表示パネルの駆動装置、表示パネル及びそれを備えた表示装置並びに表示パネルの駆動方法
US20060172282A1 (en) * 2005-01-31 2006-08-03 Naik Rajesh R Peptide templates for nanoparticle synthesis obtained through PCR-driven phage display method
JP4821951B2 (ja) 2005-02-23 2011-11-24 三菱マテリアル株式会社 ワイヤー状の金微粒子と、その製造方法および含有組成物ならびに用途
US20100127241A1 (en) * 2005-02-25 2010-05-27 The Regents Of The University Of California Electronic Devices with Carbon Nanotube Components
JP2006239790A (ja) 2005-03-01 2006-09-14 Tohoku Univ 金属ナノワイヤ作製法および金属ナノワイヤ
US7489432B2 (en) 2005-03-25 2009-02-10 Ricoh Company, Ltd. Electrochromic display device and display apparatus
JP2006272876A (ja) 2005-03-30 2006-10-12 Takiron Co Ltd 導電体
JP2006310353A (ja) 2005-04-26 2006-11-09 Takiron Co Ltd 電波吸収体
US7902639B2 (en) 2005-05-13 2011-03-08 Siluria Technologies, Inc. Printable electric circuits, electronic components and method of forming the same
KR100686796B1 (ko) 2005-05-17 2007-02-26 삼성에스디아이 주식회사 전자파 차단층을 구비한 전지 외장재 및 이를 이용한파우치형 이차 전지
KR100720101B1 (ko) * 2005-08-09 2007-05-18 삼성전자주식회사 나노구조의 다기능성 오믹층을 사용한 탑에미트형 질화물계발광소자 및 그 제조방법
CN102250506B (zh) * 2005-08-12 2014-07-09 凯博瑞奥斯技术公司 基于纳米线的透明导体
JP4974332B2 (ja) 2005-09-07 2012-07-11 一般財団法人電力中央研究所 ナノ構造体およびその製造方法
US7341944B2 (en) 2005-09-15 2008-03-11 Honda Motor Co., Ltd Methods for synthesis of metal nanowires
JP2007091859A (ja) 2005-09-28 2007-04-12 Koyo Sangyo Co Ltd 導電性塗料
JP2007105822A (ja) 2005-10-12 2007-04-26 National Institute For Materials Science 原子スケール金属ワイヤもしくは金属ナノクラスター、およびこれらの製造方法
GB2434692A (en) * 2005-12-29 2007-08-01 Univ Surrey Photovoltaic or electroluminescent devices with active region comprising a composite polymer and carbon nanotube material.
US7507449B2 (en) * 2006-05-30 2009-03-24 Industrial Technology Research Institute Displays with low driving voltage and anisotropic particles
WO2007146964A2 (fr) * 2006-06-12 2007-12-21 Robinson Matthew R Dispositifs à films minces formés à partir de particules solides
US7630041B2 (en) * 2006-06-23 2009-12-08 Tsinghua University Liquid crystal cell assembly for liquid crystal display
WO2008127313A2 (fr) * 2006-11-17 2008-10-23 The Regents Of The University Of California Réseaux de nanofils électriquement conducteurs et optiquement transparents
JP2009057518A (ja) * 2007-09-03 2009-03-19 Institute Of Physical & Chemical Research 異方性フィルムおよび異方性フィルムの製造方法
EP2353188A4 (fr) * 2008-10-30 2015-04-08 Hak Fei Poon Électrodes conductrices transparentes hybrides

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040256318A1 (en) * 2001-10-26 2004-12-23 Kazuhiro Iida Separating device, analysis system separation method and method of manufacture of separating device

Cited By (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100078197A1 (en) * 2008-09-30 2010-04-01 Fujifilm Corporation Metal nanowires, method for producing the same, and transparent conductor
US20140001418A1 (en) * 2009-08-24 2014-01-02 Cambrios Technologies Corporation Purification of metal nanostructures for improved haze in transparent conductors made from the same
US11866827B2 (en) 2011-02-28 2024-01-09 Nthdegree Technologies Worldwide Inc Metallic nanofiber ink, substantially transparent conductor, and fabrication method
US8454859B2 (en) 2011-02-28 2013-06-04 Nthdegree Technologies Worldwide Inc Metallic nanofiber ink, substantially transparent conductor, and fabrication method
US8927855B2 (en) 2011-06-14 2015-01-06 Panasonic Intellectual Property Management Co., Ltd. Solar cell and method for fabricating the same
US20130039806A1 (en) * 2011-08-12 2013-02-14 Jeffrey Blinn Nanowire purification methods, compositions, and articles
US9993875B2 (en) 2012-01-30 2018-06-12 Nthdegree Technologies Worldwide, Inc. Methods for fabrication of nanostructures
US11987713B2 (en) 2012-06-22 2024-05-21 C3 Nano, Inc. Metal nanostructured networks and transparent conductive material
US11968787B2 (en) 2012-06-22 2024-04-23 C3 Nano, Inc. Metal nanowire networks and transparent conductive material
US10781324B2 (en) 2012-06-22 2020-09-22 C3Nano Inc. Metal nanostructured networks and transparent conductive material
US10029916B2 (en) 2012-06-22 2018-07-24 C3Nano Inc. Metal nanowire networks and transparent conductive material
US9920207B2 (en) 2012-06-22 2018-03-20 C3Nano Inc. Metal nanostructured networks and transparent conductive material
TWI585032B (zh) * 2012-06-28 2017-06-01 無限科技全球公司 用於製造奈米結構的方法
WO2014004712A1 (fr) * 2012-06-28 2014-01-03 Nthdegree Technologies Worldwide Inc. Systèmes et procédés de fabrication de nanostructures
US10020807B2 (en) 2013-02-26 2018-07-10 C3Nano Inc. Fused metal nanostructured networks, fusing solutions with reducing agents and methods for forming metal networks
US9645454B2 (en) 2013-04-01 2017-05-09 Kabushiki Kaisha Toshiba Transparent conductive film and electric device
US11274223B2 (en) 2013-11-22 2022-03-15 C3 Nano, Inc. Transparent conductive coatings based on metal nanowires and polymer binders, solution processing thereof, and patterning approaches
US11343911B1 (en) 2014-04-11 2022-05-24 C3 Nano, Inc. Formable transparent conductive films with metal nanowires
US11814531B2 (en) 2014-07-31 2023-11-14 C3Nano Inc. Metal nanowire ink for the formation of transparent conductive films with fused networks
US10870772B2 (en) 2014-07-31 2020-12-22 C3Nano Inc. Transparent conductive films with fused networks
US10100213B2 (en) 2014-07-31 2018-10-16 C3Nano Inc. Metal nanowire inks for the formation of transparent conductive films with fused networks
US11512215B2 (en) 2014-07-31 2022-11-29 C3 Nano, Inc. Metal nanowire ink and method for forming conductive film
US9447301B2 (en) 2014-07-31 2016-09-20 C3Nano Inc. Metal nanowire inks for the formation of transparent conductive films with fused networks
US9183968B1 (en) 2014-07-31 2015-11-10 C3Nano Inc. Metal nanowire inks for the formation of transparent conductive films with fused networks
US9150746B1 (en) 2014-07-31 2015-10-06 C3Nano Inc. Metal nanowire inks for the formation of transparent conductive films with fused networks
US9802397B2 (en) 2014-11-27 2017-10-31 Panasonic Intellectual Property Management Co., Ltd. Structural member for electronic devices
US10376898B2 (en) 2015-06-12 2019-08-13 Dow Global Technologies Llc Method for manufacturing high aspect ratio silver nanowires
US10081020B2 (en) 2015-06-12 2018-09-25 Dow Global Technologies Llc Hydrothermal method for manufacturing filtered silver nanowires
US10564780B2 (en) 2015-08-21 2020-02-18 3M Innovative Properties Company Transparent conductors including metal traces and methods of making same
US11515058B2 (en) 2018-05-30 2022-11-29 Hefei Boe Display Technology Co., Ltd. Conductive film, production method thereof, and display apparatus
CN110201440A (zh) * 2019-05-23 2019-09-06 中色科技股份有限公司 一种板式过滤机换纸涨缩轴涨缩方法

Also Published As

Publication number Publication date
CN101689568A (zh) 2010-03-31
EP2147466B1 (fr) 2014-03-12
CN103777417A (zh) 2014-05-07
EP2477229A2 (fr) 2012-07-18
WO2008131304A1 (fr) 2008-10-30
TWI487125B (zh) 2015-06-01
JP2010525526A (ja) 2010-07-22
EP2147466B9 (fr) 2014-07-16
KR101456838B1 (ko) 2014-11-04
JP6181698B2 (ja) 2017-08-16
TWI556456B (zh) 2016-11-01
US20190191569A1 (en) 2019-06-20
SG156218A1 (fr) 2009-11-26
HK1134860A1 (en) 2010-05-14
TW201543701A (zh) 2015-11-16
TW200924203A (en) 2009-06-01
US8018563B2 (en) 2011-09-13
JP2015135831A (ja) 2015-07-27
JP6098860B2 (ja) 2017-03-22
US11224130B2 (en) 2022-01-11
KR20100017128A (ko) 2010-02-16
CN103777417B (zh) 2017-01-18
US20120033367A1 (en) 2012-02-09
EP2477229A3 (fr) 2012-09-19
CN101689568B (zh) 2014-02-26
US20080259262A1 (en) 2008-10-23
EP2477229B1 (fr) 2021-06-23
EP2147466A1 (fr) 2010-01-27
US10244637B2 (en) 2019-03-26

Similar Documents

Publication Publication Date Title
US20090321364A1 (en) Systems and methods for filtering nanowires
US9375790B2 (en) Continuous flow reactor and method for nanoparticle synthesis
Pradel et al. Cross‐flow purification of nanowires
CN108367346B (zh) 纯化纳米结构的方法
WO2016035856A1 (fr) Procédé de fabrication de nanofils métalliques ayant une uniformité de distribution de longueur améliorée
CN103945959B (zh) 固体金属合金
CN103842530B (zh) 固体银铜合金
JP5252843B2 (ja) 銀インクおよびその製法
TW201306923A (zh) 奈米線之純化方法、組合物及物品
TWI665037B (zh) 銀奈米線及該銀奈米線之製造方法,以及銀奈米線墨水
KR20140005969A (ko) 나노와이어 제조 방법, 조성물 및 물품
TW201643259A (zh) 用於製造經過濾銀奈米線之水熱法
US9050655B2 (en) Continuous reactor and method for manufacturing nanoparticles
US10376898B2 (en) Method for manufacturing high aspect ratio silver nanowires
JP5950476B2 (ja) 微粒子の製造方法
Shiau et al. The characteristics and mechanisms of Au nanoparticles processed by functional centrifugal procedures
CN114178542A (zh) 一种银纳米线的制备方法
JP7011835B2 (ja) 高結晶銀微粒子の製造方法
Hosseini et al. Synthesis of different copper nanostructures by the use of polyol technique
CN108404676A (zh) 一种一维纳米材料分离提纯装置及方法
JP2019214782A (ja) アルコール系銀ナノワイヤ分散液およびその製造方法
JP2006176876A (ja) 金属微粒子の抽出方法等および用途
US20140234220A1 (en) Method and composition for dispersions of gold nanoparticles
Sosnin et al. Synthesis of silver nanochains with a chemical method
WO2019239975A1 (fr) Liquide à base d'alcool avec dispersion de nanofils d'argent et son procédé de production

Legal Events

Date Code Title Description
AS Assignment

Owner name: CAMBRIOS TECHNOLOGIES CORPORATION, CALIFORNIA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:SPAID, MICHAEL A.;HEIDECKER, MANFRED;ALLEMAND, PIERRE-MARC;AND OTHERS;REEL/FRAME:021457/0349;SIGNING DATES FROM 20080711 TO 20080714

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION

AS Assignment

Owner name: CAM HOLDING CORPORATION, VIRGIN ISLANDS, BRITISH

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:CHAMP GREAT INTERNATIONAL CORPORATION;REEL/FRAME:040322/0944

Effective date: 20160909