TW201448263A - 透明發光二極體 - Google Patents

透明發光二極體 Download PDF

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TW201448263A
TW201448263A TW103130484A TW103130484A TW201448263A TW 201448263 A TW201448263 A TW 201448263A TW 103130484 A TW103130484 A TW 103130484A TW 103130484 A TW103130484 A TW 103130484A TW 201448263 A TW201448263 A TW 201448263A
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led
light
shaped optical
optical element
layer
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TW103130484A
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Shuji Nakamura
Steven P Denbaars
Hirokuni Asamizu
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Univ California
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    • G02B19/0061—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a LED
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Abstract

本發明揭示一種透明發光二極體(LED)，其包括複數個第III族氮化物層，包括一發射光的主動區域，其中除該主動區域外的所有層對於該光的一發射波長係透明，使得透過所有層並在透過該等層的多個方向上有效地擷取光。而且，該等第III族氮化物層之一或多個之表面可粗糙化、紋理化、圖案化或成形以增強光擷取。

Description

透明發光二極體
本發明係關於從發光二極體(LED)擷取光。
(注意：本申請案參考在本說明書全文中所指示的若干不同公告案。此外，可在下文在標題為"參考文獻"的章節中找到若干不同公告案的一列表。該些公告案之各公告案係以引用形式併入本文。)
為了增加來自一發光二極體(LED)之前側之光輸出功率，所發射光係由一放置於基板之後側上的鏡面來反射或在接合材料在發射波長上係透明之情況下，即便在基板之後側上不存在任何鏡面，仍由一塗布在引線框架上的鏡面來加以反射。然而，因為光子能量與發光物種(例如一AlInGaN多重量子井(MQW))之帶隙能量幾乎相同，故此反射光係由發射層(主動層)重新吸收。由於由發射層對光之此重新吸收，故該等LED之效率或輸出功率會減小。例如，參見圖1、2及3，下面將更詳細地說明該等圖。還參見Jpn.J.Appl.Phys.，34，L797-99(1995)與Jpn.J.Appl.Phys.，43，L180-82(2004)。
在此項技術中所需的係更有效擷取光之LED結構。本發明滿足該需求。
本發明說明一種透明發光二極體。一般而言，本發明說明一 種發光二極體，其包含複數個第III族氮化物層，包括一發射光的主動區域，其中除該主動區域外的所有層對於該光的一發射波長係透明，使得透過所有層並在透過該等層的多個方向上有效地擷取光。而且，該等第III族氮化物層之一或多個之表面可粗糙化、紋理化、圖案化或成形以增強光擷取。
在一具體實施例中，該等第III族氮化物層駐留於一透明基板或子基板上，其中該等第III族氮化物層係使用一透明膠水、一透明環氧樹脂或其他透明材料而晶圓接合該透明基板或子基板，並透過該透明基板或子基板來擷取光。該透明基板或子基板係導電的，該透明膠水、透明環氧樹脂或其他透明材料亦係如此。
一引線框架支撐該等第III族氮化物層(以及該透明基板或子基板)，該等第III族氮化物層係駐留於在該引線框架內的一透明板上。因而，從該等第III族氮化物層所發射之光透過在該引線框架內的該透明板。
而且，該裝置可包括一或多個透明傳導層，其係定位以電性連接該等第III族氮化物層以及沈積在該等第III族氮化物層上的一或多個電流散佈層，其中該等透明傳導層係沈積在該等電流散佈層上。鏡面或鏡面表面係從該裝置消除以最小化內反射，以便最小化由該主動區域重新吸收光。
在另一具體實施例中，該等第III族氮化物層係嵌入於一成形光學元件內或與其組合，且光係在進入該成形光學元件並隨後擷取之前從該等第III族氮化物層之一個以上表面來擷取。明確而言，進入該成形光學元件之至少一部分光位於一臨界角內並被擷取。而且，可粗糙化、紋理化、圖案化或成形該成形光學元件之一或多個表面以增強光擷取。此外，該成形光學元件可包括一磷 光體層，可將其粗糙化、紋理化、圖案化或成形以增強光擷取。該成形光學元件可能係一倒轉圓錐體形狀，其中該等第III族氮化物層係定位於該倒轉圓錐體形狀內，使得光係由該倒轉圓錐體形狀之側壁反射。
在另一具體實施例中，部分移除一覆蓋該等第III族氮化物層之絕緣層，並將一傳導層沈積在該絕緣層之表面內的一孔或凹陷內以電性接觸該等第III族氮化物層。
100‧‧‧藍寶石基板
102‧‧‧發射層/主動層
104‧‧‧半透明或透明電極
106‧‧‧引線框架
108‧‧‧透光環氧樹脂模製物
110‧‧‧鏡面
112‧‧‧光
114‧‧‧光
116‧‧‧光
118‧‧‧導線接合
200‧‧‧藍寶石基板
202‧‧‧發射層/主動層
204‧‧‧高反射鏡面
206‧‧‧晶粒接合
208‧‧‧引線框架
210‧‧‧透光環氧樹脂模製物
212‧‧‧光
214‧‧‧光
216‧‧‧光
300‧‧‧傳導性子基板
302‧‧‧高反射率鏡面
304‧‧‧透明ITO層
306‧‧‧p-GaN層
308‧‧‧發射或主動層
310‧‧‧n-GaN層
312‧‧‧LED發射
314‧‧‧LED發射
316‧‧‧反射性光發射
317‧‧‧粗糙化
318‧‧‧擷取
400‧‧‧發射層
402‧‧‧n型GaN層
404‧‧‧p型GaN層
406‧‧‧第一ITO層
408‧‧‧第二ITO層
410‧‧‧玻璃層
412‧‧‧表面
414‧‧‧表面
416‧‧‧導線接合
418‧‧‧引線框架
420‧‧‧接合墊
422‧‧‧接合墊
424‧‧‧光
426‧‧‧後側
428‧‧‧前側
500‧‧‧發射層
502‧‧‧n型GaN層
504‧‧‧p型GaN層
506‧‧‧ITO或ZnO層
508‧‧‧透明絕緣層/電流散佈層
510‧‧‧透明傳導膠水
512‧‧‧透明傳導基板
514‧‧‧表面
516‧‧‧表面
522‧‧‧歐姆電極/接合墊
524‧‧‧歐姆電極/接合墊
526‧‧‧透明板
528‧‧‧引線框架
530‧‧‧前側
532‧‧‧後側
600‧‧‧InGaN MQW主動層
602‧‧‧n-GaN層
604‧‧‧p-GaN層
606‧‧‧環氧樹脂層/子基板
610‧‧‧接合墊
612‧‧‧歐姆電極/接合墊
614‧‧‧ITO或ZnO層
618‧‧‧孔或凹陷
620‧‧‧表面
700‧‧‧InGaN MQW主動層
702‧‧‧n-GaN層
704‧‧‧p-GaN層
706‧‧‧環氧樹脂層/子基板
710‧‧‧窄帶Au連接/金屬層
712‧‧‧接合墊
714‧‧‧歐姆電極/接合墊
716‧‧‧ITO或ZnO層
720‧‧‧孔或凹陷
722‧‧‧表面
800‧‧‧發射層
802‧‧‧n型GaN層
804‧‧‧p型GaN層
806‧‧‧第一ITO層
808‧‧‧第二ITO層
810‧‧‧玻璃層
812‧‧‧表面
814‧‧‧表面
816‧‧‧導線接合
818‧‧‧引線框架或子基板
820‧‧‧接合墊
822‧‧‧接合墊
824‧‧‧成形光學元件/球體
826‧‧‧磷光體層
828‧‧‧光
830‧‧‧光
834‧‧‧表面
900‧‧‧InGaN MQW發射層
902‧‧‧n型GaN層
904‧‧‧p型GaN層
906‧‧‧ITO或ZnO層
908‧‧‧表面
910‧‧‧接合墊
912‧‧‧歐姆接觸/接合墊
914‧‧‧表面
916‧‧‧環氧樹脂層
918‧‧‧成形光學元件/環氧樹脂
920‧‧‧磷光體層
1000‧‧‧InGaN MQW發射層
1002‧‧‧n型GaN層
1004‧‧‧p型GaN層
1006‧‧‧ITO或ZnO層
1008‧‧‧接合墊
1010‧‧‧歐姆接觸/接合墊
1012‧‧‧表面
1014‧‧‧表面
1016‧‧‧環氧樹脂層
1018‧‧‧成形光學元件
1020‧‧‧磷光體層
1022‧‧‧電流散佈層
1024‧‧‧導線接合
1026‧‧‧引線框架
1100‧‧‧InGaN MQW發射層
1102‧‧‧n型GaN層
1104‧‧‧p型GaN層
1106‧‧‧ITO或ZnO層
1108‧‧‧接合墊
1110‧‧‧歐姆接觸/接合墊
1112‧‧‧表面
1114‧‧‧表面
1116‧‧‧環氧樹脂層
1118‧‧‧成形光學元件
1120‧‧‧磷光體層
1122‧‧‧電流散佈層
1124‧‧‧導線接合
1126‧‧‧引線框架
1128‧‧‧鏡面
1200‧‧‧發射層
1202‧‧‧n型GaN層
1204‧‧‧p型GaN層
1206‧‧‧ITO或ZnO層
1208‧‧‧圖案化藍寶石基板(PSS)
1210‧‧‧導線接合
1212‧‧‧引線框架
1214‧‧‧成形光學元件/倒轉圓錐體形狀
1216‧‧‧成形光學元件/倒轉圓錐體形狀
1218‧‧‧引線框架/前側
1220‧‧‧後側
1222‧‧‧光
1224‧‧‧接合墊
1226‧‧‧歐姆接觸/接合墊
1228‧‧‧介面
1230‧‧‧後側
1300‧‧‧發射層
1302‧‧‧n型GaN層
1304‧‧‧p型GaN層
1306‧‧‧ITO或ZnO層
1308‧‧‧基板
1310‧‧‧導線接合
1312‧‧‧引線框架
1314‧‧‧成形光學元件/倒轉圓錐體形狀
1316‧‧‧成形光學元件/倒轉圓錐體形狀
1318‧‧‧引線框架/前側
1320‧‧‧後側
1322‧‧‧光
1324‧‧‧接合墊
1326‧‧‧歐姆接觸/接合墊
1328‧‧‧頂部/前表面
1330‧‧‧底部/後表面
1400‧‧‧改良式LED結構
1402‧‧‧發射層
1404‧‧‧基板
1406‧‧‧導線接合
1408‧‧‧引線框架
1410‧‧‧成形光學元件
1412‧‧‧成形光學元件
1414‧‧‧頂部/前側
1416‧‧‧底部/後側
1418‧‧‧光
1420‧‧‧磷光體層
1422‧‧‧頂部/前表面
1424‧‧‧底部/後表面
1426‧‧‧表面
1500‧‧‧改良式LED結構
1502‧‧‧發射層
1504‧‧‧n型GaN層
1506‧‧‧p型GaN層
1508‧‧‧ITO或ZnO層
1510‧‧‧基板
1512‧‧‧導線接合
1514‧‧‧引線框架
1516‧‧‧成形光學元件
1518‧‧‧成形光學元件
1520‧‧‧頂部/前側
1522‧‧‧底部/後側
1524‧‧‧光
1526‧‧‧鏡面
1528‧‧‧前側
1530‧‧‧光
1600‧‧‧發射層
1602‧‧‧n型GaN層
1604‧‧‧p型GaN層
1606‧‧‧ITO或ZnO層
1608‧‧‧基板
1610‧‧‧導線接合
1612‧‧‧引線框架
1614‧‧‧成形光學元件
1616‧‧‧成形光學元件
1618‧‧‧頂部/前側
1620‧‧‧底部/後側
1622‧‧‧光
1624‧‧‧鏡面
1626‧‧‧前側
1628‧‧‧光
1630‧‧‧頂部/前表面
1700‧‧‧改良式LED結構
1702‧‧‧發射層
1704‧‧‧基板
1706‧‧‧導線接合
1708‧‧‧引線框架
1710‧‧‧成形光學元件
1712‧‧‧成形光學元件
1714‧‧‧頂部/前側
1716‧‧‧底部/後側
1718‧‧‧光
1720‧‧‧鏡面
1722‧‧‧磷光體層
1724‧‧‧頂部表面
1726‧‧‧表面
1800‧‧‧改良式LED結構
1802‧‧‧發射層
1804‧‧‧基板
1806‧‧‧導線接合
1808‧‧‧引線框架
1810‧‧‧成形光學元件
1812‧‧‧光
1814‧‧‧鏡面
1816‧‧‧前側
1818‧‧‧後側
1820‧‧‧光
1900‧‧‧改良式LED結構
1902‧‧‧發射層
1904‧‧‧基板
1906‧‧‧導線接合
1908‧‧‧引線框架
1910‧‧‧成形光學元件
1912‧‧‧光
1914‧‧‧側壁
1916‧‧‧前側
1918‧‧‧光
1920‧‧‧後側/基底
1922‧‧‧鏡面表面
1928‧‧‧頂部表面
2000‧‧‧發射層
2002‧‧‧基板
2004‧‧‧導線接合
2006‧‧‧引線框架
2008‧‧‧成形光學元件
2010‧‧‧光
2012‧‧‧側壁
2014‧‧‧前側
2016‧‧‧光
2018‧‧‧後側/基底
2020‧‧‧前表面或頂部表面
2100‧‧‧改良式LED結構
2102‧‧‧發射層
2104‧‧‧基板
2106‧‧‧導線接合
2108‧‧‧引線框架
2110‧‧‧成形光學元件
2112‧‧‧光
2114‧‧‧側壁
2116‧‧‧前側
2118‧‧‧光
2120‧‧‧後側
2122‧‧‧磷光體層
2124‧‧‧前表面或頂部表面
2126‧‧‧表面
2200‧‧‧改良式LED結構
2202‧‧‧發射層
2204‧‧‧基板
2206‧‧‧導線接合
2208‧‧‧引線框架
2210‧‧‧成形光學元件
2212‧‧‧成形光學元件
2214‧‧‧頂部/前側
2216‧‧‧底部/後側
2218‧‧‧光
2220‧‧‧透明板
2222‧‧‧透明/透光環氧樹脂
已參考該等圖式，各圖式中相同參考數字全文代表對應零件：圖1、2及3係傳統LED之斷面示意圖。
圖4A及4B分別係依據本發明之較佳具體實施例之一改良式LED結構之示意圖及平面圖。
圖5A及5B分別係依據本發明之較佳具體實施例之一改良式LED結構之示意圖及平面圖。
圖6係依據本發明之較佳具體實施例之一改良式LED結構之一示意圖。
圖7係依據本發明之較佳具體實施例之一改良式LED結構之一示意圖。
圖8A及8B分別係依據本發明之較佳具體實施例之一改良式LED結構之示意圖及平面圖。
圖9係依據本發明之較佳具體實施例之一改良式LED結構之一示意圖。
圖10A及10B分別係依據本發明之較佳具體實施例之一改良式LED結構之示意圖及平面圖。
圖11係依據本發明之較佳具體實施例之一改良式LED結構之一示意圖。
圖12A及12B分別係依據本發明之較佳具體實施例之一改良式LED結構之示意圖及平面圖。
圖13係依據本發明之較佳具體實施例之一改良式LED結構之一示意圖。
圖14係依據本發明之較佳具體實施例之一改良式LED結構之一示意圖。
圖15A及15B分別係依據本發明之較佳具體實施例之一改良式LED結構之示意圖及平面圖。
圖16係依據本發明之較佳具體實施例之一改良式LED結構之一示意圖。
圖17係依據本發明之較佳具體實施例之一改良式LED結構之一示意圖。
圖18A及18B分別係依據本發明之較佳具體實施例之一改良式LED結構之示意圖及平面圖。
圖19A及19B分別係依據本發明之較佳具體實施例之一改良式LED結構之示意圖及平面圖。
圖20A及20B分別係依據本發明之較佳具體實施例之一改良式LED結構之示意圖及平面圖。
圖21A及21B分別係依據本發明之較佳具體實施例之一改良式LED結構之示意圖及平面圖。
圖22A及22B分別係依據本發明之較佳具體實施例之一改良式LED結構之示意圖及平面圖。
在較佳具體實施例之以下說明中，參考形成本發明之一部分的附圖，並在附圖中藉由例示方式顯示其中可實施本發明的一特定具體實施例。應明白，可利用其他具體實施例並可進行結構變化而不脫離本發明之範疇。
概述
在該等圖之下列說明中，未顯示該等LED結構之細節。僅顯示發射層(通常係AlInGaN MQW)、p型GaN層、n型GaN層及藍寶石基板。當然，在該LED結構內可能存在其他層，例如一p-AlGaN電子阻障層、InGaN/GaN超晶格及其他。在本發明中，最重要的態樣係該LED結構之該等表面，因為係主要由該等磊晶晶圓之表面層或條件來決定光擷取效率。因此，在該等圖之所有圖中僅顯示該LED之一些態樣(該等表面層)。
傳統LED結構
圖1、2及3係傳統LED之示意圖。
在傳統LED中，為了增加來自LED之前側之光輸出功率，發射光係由在藍寶石基板之後側上的鏡面來加以反射或即便在藍寶石基板之後側上不存在任何鏡面之情況下且在接合材料在發射波長上係透明之情況下，由塗布在引線框架上的鏡面來加以反射。因為光子能量與AlInGaN多重量子井(MQW)之量子井之帶隙能量幾乎相同，故此反射光係由發射層(主動層)重新吸收。接著，由於由該發射層重新吸收，故減小該等LED之效率或輸出功率。
在圖1中，一傳統LED包括一藍寶石基板100、發射層102(主動層)及半透明或透明電極104(例如ITO或ZnO)。該LED係使用一透光環氧樹脂模製物108而晶粒接合在一引線框架106上，在藍寶石基板100之後側上沒有任何鏡面。在此情況下，在引線框架106 上的該塗布材料或引線框架106之表面變成一鏡面110。若在基板100之後側上存在一鏡面110，則該LED晶片係藉由銀膏來加以晶粒接合。主動層102向基板100發射光112並向該等電極104發射光114。發射光112係由鏡面110向電極104反射，變成反射光116，該反射光係由電極104透射以逃離該LED。該LED係導線接合118至引線框架106。
在圖2中，除了其係一覆晶LED外，該傳統LED類似於圖1所示者。該LED包括一藍寶石基板200與發射層202(主動層)及一高反射鏡面204。該LED係晶粒接合206至一引線框架208上並嵌入於一透光環氧樹脂模製物210內。主動層202向基板200發射光212並向該高反射鏡面204發射光214。發射光214係由鏡面204向基板200反射，變成反射光216，該反射光係由基板200透射以逃離該LED。
在圖3中，傳統LED包括一傳導性子基板300、高反射率鏡面302(其中Ag>94%反射率(R))、一透明ITO層304、一p-GaN層306、一發射或主動層308及一n-GaN層310。顯示該LED沒有該環氧樹脂模製物，但可使用類似模製物。發射層308向鏡面302發射LED發射312並向n-GaN層310發射LED發射314。發射層308之發射312係由鏡面302反射，其中該等反射性光發射316係由發射層308重新吸收。該LED之效率由於此重新吸收而減小。該n-GaN層可粗糙化317以增強LED發射314之擷取318。
改良式LED結構
本發明說明一透明LED。一般而言，本發明說明一種發光裝置，其包含複數個第III族氮化物層，包括一發射光的主動區域，其中除該主動區域外的所有層對於該光的一發射波長係透明，使 得透過所有層並在透過該等層的多個方向上有效地擷取光。可粗糙化、紋理化、圖案化或成形該等第III族氮化物層之一或多個之表面以增強光擷取。
圖4A係說明依據本發明之較佳具體實施例之一特定改良式LED結構之一示意圖，其中該改良式LED結構包含一發射層400、一n型GaN層402、一p型GaN層404、一第一ITO層406、一第二ITO層408及一玻璃層410。n型GaN層402可具有粗糙化、紋理化、圖案化或成形之表面412(例如，一圓錐狀表面)，而玻璃層410可具有一粗糙化、紋理化、圖案化或成形之表面414(例如，一圓錐狀表面)。該LED係經由接合墊420、422而導線接合416至一引線框架418。圖4B顯示引線框架418之一俯視圖。
在圖4A中，該LED結構係生長在一藍寶石基板上，該藍寶石基板係使用一雷射脫層技術來加以移除。其後，將第一ITO層406沈積在p型GaN層404上。接著使用一環氧樹脂作為一膠水將該LED結構附著至玻璃層410，該玻璃層係由第二ITO層408塗布。接著將該LED結構導線接合416至引線框架418。
在圖4A中，在該LED之該等前側或後側處不存在任何有意鏡面。相反，引線框架418係設計以從該LED之兩側有效地擷取光424，因為框架418不阻擋該等表面412及414，即該LED之後側426以及該LED之前側428。圖4B顯示框架418在玻璃層410之該等邊緣處支撐該LED，使玻璃層410之發射表面及LED不受阻擋。
可將一歐姆接觸放置於在n-GaN層402上的接合墊420下面，但出於簡化在圖中未予以顯示。
圖5A係說明依據本發明之較佳具體實施例之一特定改良式LED結構之一示意圖，其中該改良式LED結構包含一InGaN多重 量子井(MQW)層作為一發射層500、一n型GaN層502、一p型GaN層504、一ITO或ZnO層506、一透明絕緣層508及用於將ITO或ZnO層506接合至一透明傳導基板512之透明傳導膠水510。透明傳導基板512可具有一粗糙化、紋理化、圖案化或成形之表面514(例如，一圓錐狀表面)，而p型-GaN層504可具有一粗糙化、紋理化、圖案化或成形之表面516(例如，一圓錐狀表面)。較佳的係，該等層500、502、504及506具有大約5微米的一組合厚度518，而基板512及膠水510具有大約400微米的一組合厚度520。最後，將歐姆電極/接合墊522、524放置於該LED上。
該LED結構可生長在一藍寶石基板上，該藍寶石基板係使用一雷射脫層技術來加以移除。將ITO層506沈積在p型GaN層504上。在沈積ITO層506之前，沈積絕緣層508作為一電流散佈層，該絕緣層可包含SiO2或SiN。在沒有電流散佈層508之情況下，該LED之發射強度由於不均勻的電流而變小。該等透明傳導基板512可能係ZnO、Ga2O3或在所需波長上係透明的另一材料，係使用透明傳導膠水510而晶圓接合或膠附至ITO層506。接著，在該LED結構之兩側上形成一n-GaN歐姆電極/接合墊522及一p-GaN歐姆電極/接合墊524。最後，例如使用一濕式蝕刻(例如KOH或HCL)將n型GaN層502之氮面(N面)粗糙化、紋理化、圖案化或成形516以增強光擷取，以形成一圓錐狀表面516。
圖5B係圖5A之LED之一平面圖，並顯示該LED放置於一透明板526上，該透明板駐留於一引線框架528上，二者均工作以從該LED移除熱。該LED之p側(即，具有基板512之側)係附著至透明板526。在n型GaN層502之接合墊524與引線框架528之間執行導線接合。
在該LED之前側530或後側532不存在任何有意的鏡面。相反，引線框架528係設計以從該LED之兩側(即，該LED之後側532以及該LED之前側530)有效地擷取光。
最後，可將一歐姆接觸放置於在n-GaN層502之接合墊524下面。然而，出於簡化在圖中未顯示此歐姆接觸。
圖6係說明依據本發明之較佳具體實施例之一特定改良式LED結構之一示意圖，其中該改良式LED結構包含一InGaN MQW主動層600、一n-GaN層602、一p-GaN層604、一環氧樹脂層606(其係大約400微米厚608)、一接合墊610、一歐姆電極/接合墊612及一ITO或ZnO層614。n-GaN層602、主動層600及p-GaN層604之組合厚度616係大約5微米。
圖7係說明依據本發明之較佳具體實施例之一特定改良式LED結構之一示意圖，其中該改良式LED結構包含一InGaN MQW主動層700、一n-GaN層702、一p-GaN層704、一環氧樹脂層706(大約400微米厚708)、一窄帶Au連接710、一接合墊712、一歐姆電極/接合墊714及一ITO或ZnO層716。n-GaN 702、主動層700及p-GaN層704之厚度718係大約5微米。
在圖6及7二者中，使用一較厚環氧樹脂層606、706，而不是圖4所示之玻璃層410。為了進行電性接觸，部分移除該等環氧樹脂絕緣層606、706，並將ITO層614(其係一透明金屬氧化物或一窄帶Au或其他金屬層710)沈積在該等環氧樹脂層606、706以及在該等環氧樹脂層606、706之表面內的一孔或凹陷618、720內，以電性接觸p-GaN層604、704。
此外，圖6及7二者顯示將粗糙化、紋理化、圖案化或成形表面620、722形成於n型GaN層602、702之氮面(N面)上。該些粗糙 化、紋理化、圖案化或成形表面620、722增強光擷取。
應注意，若取代一藍寶石基板使用一GaN基板，則將不需要雷射脫層，由此將不需要該等子基板606、706。而且，若將該LED結構產生在一GaN基板上，則將ITO層614沈積在p型GaN層606上且該GaN基板之後側(其係一N面GaN)可使用一濕式蝕刻(例如KOH及HCL)來加以蝕刻，以便在n型GaN層602、702上形成粗糙化、紋理化、圖案化或成形的表面620、722。
還應注意，在ITO層614之表面經粗糙化、紋理化、圖案化或成形之情況下，透過ITO層614來增加光擷取。即便在p型GaN層604上沒有ITO層614，粗糙化、紋理化、圖案化或成形之p型GaN層604之表面仍有效地透過p型GaN604層增加光擷取。
最後，可在表面620粗糙化、紋理化、圖案化或成形之n型GaN層602之後使用用於n型GaN層602之一歐姆接觸及ITO或ZnO層614。ITO或ZnO層614具有一類似於GaN之折射率，由此最小化在ITO、ZnO及GaN之間介面處的光反射。
圖8A係依據本發明之較佳具體實施例之一特定改良式LED結構之一示意圖，其中該改良式LED結構包含一發射層800、一n型GaN層802、一p型GaN層804、一第一ITO層806、一第二ITO層808及一玻璃層810。n型GaN層802具有一粗糙化、紋理化、圖案化或成形之表面812(例如，一圓錐體形狀表面)，而玻璃層810具有一粗糙化、紋理化、圖案化或成形之表面814(例如，一圓錐體形狀表面)。該LED係使用該等接合墊820、822而導線接合816至一引線框架或子基板818。
該LED可嵌入有或包含於形成(例如)一透鏡的一模製物或成形光學元件824內，例如一由環氧樹脂或玻璃製成之球體。成形 光學元件824可能(例如)在成形光學元件824之一外表面上包含一粗糙化、紋理化、圖案化或成形之磷光體層826，其可能遠離該LED。在此具體實施例中，發射層800向該等表面812及814發射光828，其中可擷取光830。
在此具體實施例中，因為成形光學元件824係一球體，可將該LED結構視為一較小點光源，因為所有發射自該LED之光之方向係實質上垂直於在空氣與球體824之間的介面，從而透過在空氣與球體824之間的介面將來自該處之光有效地擷取至空氣。
此外，若將磷光體層826放置於該成形光學元件之外表面上或附近，則由於降低由磷光體層826背散射光828降低重新吸收光828而增加(例如)從藍光至白光之轉換效率。而且，若粗糙化、紋理化、圖案化或成形磷光體層826之表面834，則再次增加光擷取。
最後，圖8B係圖8A中裝置之一俯視圖，其說明引線框架818。
圖9係說明依據本發明之較佳具體實施例之一特定改良式LED結構之一示意圖，其中該改良式LED結構包含一InGaN MQW發射層900、一n型GaN層902、一p型GaN層904、一ITO層906，其具有一粗糙化、紋理化、圖案化或成形之表面908、一接合墊910、一歐姆接觸/接合墊912、n型GaN層902之一粗糙化、紋理化、圖案化或成形之表面914、及一環氧樹脂層916，其係沈積在908上。該LED可嵌入有或包含於形成(例如)一透鏡的一模製物或成形光學元件918內，例如一由環氧樹脂或玻璃製成之球體。成形光學元件918可(例如)在成形光學元件918之一外表面上包含一粗糙化、紋理化、圖案化或成形之磷光體層920，其可能遠離該 LED。
在圖9中，ITO或ZnO層906係粗糙化、紋理化、圖案化或成形以透過ITO或ZnO層906改良光擷取。此外，底部固定環氧樹脂918。否則，圖9之結構與圖6至8所示的相同。
圖10A係說明依據本發明之較佳具體實施例之一特定改良式LED結構之一示意圖，其中該改良式LED結構包含一InGaN MQW發射層1000、一n型GaN層1002、一p型GaN層1004、一ITO層1006，一接合墊1008、一歐姆接觸/接合墊1010、ITO層1006之一粗糙化、紋理化、圖案化或成形之表面1012、n型GaN層1002之一粗糙化、紋理化、圖案化或成形之表面1014、及一環氧樹脂層1016，其係沈積在表面1012上。
該LED可嵌入有或包含於形成(例如)一透鏡的一模製物或成形光學元件1018內，例如一由環氧樹脂或玻璃製成之球體。成形光學元件1018可(例如)在成形光學元件1018之一外表面上包含一粗糙化、紋理化、圖案化或成形之磷光體層1020，其可能遠離該LED。
該LED還可包括一電流散佈層1022，其可包含(例如)SiN、SiO2或一些其他絕緣材料，在ITO或ZnO層1006之前沈積以將電流均勻地流過p型GaN層1004。
最後，將該LED導線接合1024至一引線框架1026。圖10B顯示引線框架1026之一俯視圖。
圖11係說明依據本發明之較佳具體實施例之一特定改良式LED結構之一示意圖，其中該改良式LED結構包含一InGaN MQW發射層1100、一n型GaN層1102、一p型GaN層1104、一ITO層1106，一接合墊1108、一歐姆接觸/接合墊1110、ITO層1106之一 粗糙化、紋理化、圖案化或成形之表面1112、p型GaN層1102的一粗糙化、紋理化、圖案化或成形之表面1114、及一環氧樹脂層1116，其係沈積在表面1112上。
該LED可嵌入有或包含於形成(例如)一透鏡的一模製物或成形光學元件1118內，例如一由環氧樹脂或玻璃製成之球體。成形光學元件1118可(例如)在成形光學元件1118之一外表面上包含一粗糙化、紋理化、圖案化或成形之磷光體層1120，其可能遠離該LED。
該LED還可包括一電流散佈層1122，其可包含(例如)SiN、SiO2或一些其他絕緣材料，在ITO或ZnO層1106之前沈積以將電流均勻地流過p型GaN層1104。
最後，將該LED導線接合1124至一引線框架1126。圖11B顯示引線框架1126之一俯視圖。
在圖11之具體實施例中，將一鏡面1128放置於成形光學元件1118之外部，以便從該裝置之一前側1130獲得更多光。該鏡面之形狀係設計以防止反射光到達該LED，以便降低由該LED重新吸收光。
圖12A係說明依據本發明之較佳具體實施例之一特定改良式LED結構之一示意圖，其中該改良式LED結構包含一發射層1200、一n型GaN層1202、一p型GaN層1204、一ITO或ZnO層1206、及一基板1208，其可能係一平直藍寶石基板或一圖案化藍寶石基板(PSS)。該LED係導線接合1210至一引線框架1212，並嵌入於形成(例如)透鏡的模製物或成形光學元件1214、1216內或與其組合，例如由環氧樹脂或玻璃所製成之倒轉圓錐體形狀。在此具體實施例中，該等成形光學元件1214、1216係形成於相對側 上，例如該LED之頂部/前側及底部/後側，其中發射層1200發射從該LED之頂部/前側及底部/後側擷取的光1222。
該LED係經由接合墊1224、1226而電性連接至引線框架1218。將接合墊1224沈積在ITO或ZnO層1206上，並在藉由一透過p型GaN層1204之選擇性蝕刻來曝露n型GaN層1202之後將歐姆接觸/接合墊1226沈積在n型GaN層1202上。
如上所述，該LED可組合環氧樹脂或玻璃並模製成一倒轉圓錐體形狀1214、1216用於前側1218及後側1220二者，其中該倒轉圓錐體模製形狀1214、1216提供增強光擷取。明確而言，進入該等倒轉圓錐體形狀1214、1216之大多數光位於一臨界角內並被擷取。該光係由倒轉圓錐體形狀1214之該等側壁反射至倒轉圓錐體形狀1214之一頂部或發射表面以透過倒轉圓錐體形狀1214之頂部表面來發射，且類似地，該光係由倒轉圓錐體形狀1216之該等側壁反射至倒轉圓錐體形狀1216之一底部或發射表面以透過倒轉圓錐體形狀1214之底部表面來發射。
最後，應注意，一圖案化藍寶石基板(PSS)1208改良透過n-GaN層1202與基板1208之間介面1228之光擷取效率。此外，可粗糙化、紋理化、圖案化或成形藍寶石基板1208之後側1230(例如，一圓錐狀表面)以增加光擷取效率。
圖12B顯示引線框架1212之一俯視圖。
圖13係說明依據本發明之較佳具體實施例之一特定改良式LED結構之一示意圖，其中該改良式LED結構包含一發射層1300、一n型GaN層1302、一p型GaN層1304、一ITO或ZnO層1306、及一基板1308，其可能係一平直藍寶石基板或一圖案化藍寶石基板(PSS)。該LED係導線接合1310至一引線框架1312，並嵌 入於形成(例如)透鏡的模製物或成形光學元件1314、1316內或與其組合，例如由環氧樹脂或玻璃所製成之倒轉圓錐體形狀。在此具體實施例中，該等成形光學元件1314、1316係形成於相對側上，例如該LED之頂部/前側及底部/後側，其中發射層1300發射從該LED之頂部/前側及底部/後側擷取的光1322。
該LED係經由接合墊1324、1326而電性連接至引線框架1318。將接合墊1324沈積在ITO或ZnO層1306上，並在藉由一透過p型GaN層1304之選擇性蝕刻來曝露n型GaN層1302之後，將歐姆接觸/接合墊1326沈積在n型GaN層1302上。
如上所述，該LED可組合環氧樹脂或玻璃並模製成一倒轉圓錐體形狀1314、1316用於前側1318及後側1320，其中該倒轉圓錐體模製形狀1314、1316提供增強光擷取。明確而言，進入該等圓錐體形狀1314、1316之大多數光位於一臨界角內並被擷取。該光係由倒轉圓錐體形狀1314之該等側壁反射至倒轉圓錐體形狀1314之一頂部或發射表面以透過倒轉圓錐體形狀1314之頂部表面來發射，且類似地，該光係由倒轉圓錐體形狀1316之該等側壁反射至倒轉圓錐體形狀1316之一底部或發射表面以透過倒轉圓錐體形狀1314之底部表面來發射。而且，可粗糙化、紋理化、圖案化或成形該等成形光學元件1314之頂部/前表面1328以及成形光學元件1316之底部/後表面1330以透過該等元件1314、1316增加光擷取。
圖14係說明依據本發明之較佳具體實施例之一特定改良式LED結構之一示意圖，其中該改良式LED結構1400包括一發射層1402與一基板1404(以及其他層)，且基板1404係一平直或圖案化藍寶石基板。該LED 1400係導線接合1406至一引線框架1408，並嵌入於形成(例如)透鏡的模製物或成形光學元件1410、1412內或 與其組合，例如由環氧樹脂或玻璃所製成的倒轉圓錐體形狀。在此具體實施例中，該等成形光學元件1410、1412係形成於相對側上，例如LED 1400之頂部/前側1414及底部/後側1416，其中發射層1402發射從LED 1400之頂部/前側1414及底部/後側1416擷取的光1418。
在圖14中，可將磷光體層1420放置於成形光學元件1410之頂部/前表面1422以及成形光學元件1412之底部/後表面1424附近。較佳的係，磷光體層1420應儘可能遠離LED 1400而定位。在此情況下，由於降低由該等磷光體層1420背散射光至LED 1400而降低由LED 1400重新吸收發射光，故增加藍光至白光之轉換效率。而且，可粗糙化、紋理化、圖案化或成形該等磷光體層1420之該等表面1426以改良光擷取。
圖15A係說明依據本發明之較佳具體實施例之一特定改良式LED結構之一示意圖，其中該改良式LED結構1500包含一發射層1502、一n型GaN層1504、一p型GaN層1506、一ITO或ZnO層1508、及一基板1510，其可能係一平直藍寶石基板或一圖案化藍寶石基板(PSS)。
LED 1500係導線接合1512至一引線框架1514，其中圖15B係一顯示引線框架1514之俯視圖的示意圖。
在此具體實施例中，LED 1500係嵌入於形成(例如)透鏡的模製物或成形光學元件1516、1518內或與其組合，例如由環氧樹脂或玻璃所製成之倒轉圓錐體形狀。該等成形光學元件1516、1518係形成於相對側上，例如LED 1500之頂部/前側1520及底部/後側1522，其中發射層1502發射從LED 1500之頂部/前側1520及底部/後側1522擷取的光1524。
一鏡面1526可放置於成形光學元件1518內部以增加至LED 1500之前側1528的光輸出。而且，鏡面1526之形狀係設計以防止從LED 1500所發射之光1530之反射被LED 1500重新吸收，從而將會降低該LED之輸出功率或效率。相反，鏡面1526將反射光1530從LED 1500引走。
此外，鏡面1526僅部分附著(或根本不附著)至LED 1500或基板1510。此不同於傳統LED，其中(例如)鏡面係附著至該LED之整個表面，如圖1至3所示。
圖16係說明依據本發明之較佳具體實施例之一特定改良式LED結構之一示意圖，其中該改良式LED結構包含一發射層1600、一n型GaN層1602、一p型GaN層1604、一ITO或ZnO層1606、及一基板1608，其可能係一平直藍寶石基板或一圖案化藍寶石基板(PSS)。該LED係導線接合1610至一引線框架1612。
在此具體實施例中，該LED係嵌入於形成(例如)透鏡的模製物或成形光學元件1614、1616內或與其組合，例如由環氧樹脂或玻璃所製成之倒轉圓錐體形狀。該等成形光學元件1614、1616係形成於相對側上，例如該LED之頂部/前側1618及底部/後側1620，其中發射層1602發射從該LED之頂部/前側1618及底部/後側1620二者擷取的光1622。
一鏡面1624可放置於成形光學元件1616內部以增加至該LED之前側1626的光輸出。而且，鏡面1624之形狀係設計以防止從該LED所發射之光1628之反射被該LED重新吸收，從而將會降低該LED之輸出功率或效率。相反，鏡面1624將反射光1628從該LED引導開。
此外，鏡面1624僅部分附著(或根本不附著)至該LED或基板 1608。此不同於傳統LED，其中(例如)鏡面係附著至該LED之整個表面，如圖1至3所示。
最後，將成形光學元件1614之頂部/前表面1630粗糙化、紋理化、圖案化或成形以改良光擷取效率。
圖17係說明依據本發明之較佳具體實施例之一特定改良式LED結構之一示意圖，其中該改良式LED結構1700包括一發射層1702與一基板1704(以及其他層)，且基板1704係一平直或圖案化藍寶石基板。該LED 1700係導線接合1706至一引線框架1708，並嵌入於形成(例如)透鏡的模製物或成形光學元件1710、1712內或與其組合，例如由環氧樹脂或玻璃所製成之倒轉圓錐體形狀。在此具體實施例中，該等成形光學元件1710、1712係形成於相對側上，例如LED 1700之頂部/前側1714及底部/後側1716，其中發射層1702發射從LED 1700之頂部/前側1714及底部/後側1716二者擷取光1718。
在圖17中，一鏡面1720可放置於成形光學元件1712內部以增加引導至LED 1700之前側1714的光輸出。而且，可將一磷光體層1722放置於成形光學元件1710之頂部表面1724附近。較佳的係，磷光體層1722係儘可能遠離LED 1700而定位。在此情況下，由於降低由磷光體層1722背散射而降低重新吸收從LED 1700所發射之光1718，故增加藍光至白光之轉換效率。此外，可粗糙化、紋理化、圖案化或成形磷光體層1722之表面1726以改良透過磷光體層1722之光擷取。
圖18A係說明依據本發明之較佳具體實施例之一特定改良式LED結構之一示意圖，其中該改良式LED結構1800包括一發射層1802與一基板1804(以及其他層)。LED 1800係導線接合1806至一 引線框架1808，其中圖18B係一顯示引線框架1808之俯視圖的圖解。
在此具體實施例中，LED 1800係嵌入於形成(例如)透鏡的模製物或成形光學元件1810內或與其組合，例如由環氧樹脂或玻璃所製成之倒轉圓錐體形狀。由發射層1802所發射之光1812係由定位於成形光學元件1810內之鏡面1814向成形光學元件1810之前側1816來反射，遠離成形光學元件1810之後側1818，其中從成形光學元件1810輸出反射光1820。
圖19A係說明依據本發明之較佳具體實施例之一特定改良式LED結構之一示意圖，其中該改良式LED結構1900包括一發射層1902與一基板1904(以及其他層)。LED 1900係導線接合1906至一引線框架1908，其中圖19B係一顯示引線框架1908之俯視圖的圖解。
在此具體實施例中，LED 1900係嵌入於形成(例如)透鏡的模製物或成形光學元件1910內或與其組合，例如由環氧樹脂或玻璃所製成之倒轉圓錐體形狀。由發射層1902所發射之光1912係由成形光學元件1910之該等側壁1914向成形光學元件1910之前側1916反射，其中從成形光學元件1910輸出反射光1918，並遠離成形光學元件1910之後側1920，。
較佳的係，LED 1900係定位於成形光學元件1910內，使得由該LED所發射之光1912係由該等側壁1914之鏡面表面1922反射，其中該等鏡面表面1922係沈積或附著至該等側壁1914。該等側壁1914相對於成形光學元件1910之基底1920之角度1924係一臨界角，其將從LED 1900所發射之光1912向成形光學元件1910之前側1916反射。例如，環氧樹脂之折射率係n2=1.5，空氣之折射率係 n1=1，因此反射臨界角係sin-1(1/1.5)。因此，該等側壁1914之角度1924應超過sin-1(1/1.5)。此導致在由1926所標注之方向上從該成形光學元件之頂部表面1928有效地擷取來自LED 1900之反射光1912。
圖20A係說明依據本發明之較佳具體實施例之一特定改良式LED結構之一示意圖，其中該改良式LED結構包括一發射層2000與一基板2002(以及其他層)。該LED係導線接合2004至一引線框架2006，其中圖20B係引線框架2006之一俯視圖。
在此具體實施例中，該LED係嵌入於形成(例如)透鏡的一模製物或成形光學元件2008內或與其組合，例如環氧樹脂或玻璃所製成之倒轉圓錐體形狀。由發射層2002所發射之光2010係由成形光學元件2008之該等側壁2012向成形光學元件2008之前側2014反射，其中從成形光學元件2008輸出反射光2016，並遠離成形光學元件2008之後側2018。
較佳地係，該LED係定位於成形光學元件2008內，使得由該LED所發射之光2010係由該等側壁2012反射。而且，將成形光學元件2008之前表面或頂部表面2020粗糙化、紋理化、圖案化或成形以增加光擷取。
該等側壁2012相對於成形光學元件2008之基底2018之角度2022係一臨界角，其將從該LED所發射之2010向成形光學元件2008之前側2014反射。例如，環氧樹脂之折射率係n2=1.5，空氣之折射率係n1=1，因此反射臨界角係sin-1(1/1.5)。因此，該等側壁2012之角度2022應超過sin-1(1/1.5)。此導致從成形光學元件2008之前表面2020有效地擷取來自該LED之反射光2010。
圖21A係說明依據本發明之較佳具體實施例之一特定改良式 LED結構之一示意圖，其中該改良式LED結構2100包括一發射層2102與一基板2104(以及其他層)。該LED 2100係導線接合2106至一引線框架2108，其中圖21B顯示引線框架2108之一俯視圖。
在此具體實施例中，LED 2100係嵌入於形成(例如)透鏡的模製物或成形光學元件2110內或與其組合，例如由環氧樹脂或玻璃所製成之倒轉圓錐體形狀。較佳地係，LED 2100係定位於成形光學元件2110內，使得由該LED所發射之光2112係由成形光學元件2110之該等側壁2114向成形光學元件2110之前側2116反射，其中從成形光學元件2110輸出反射光2118，並遠離成形光學元件2110之後側2120。
可將一磷光體層2122放置於成形光學元件2110之前表面或頂部表面2124上或附近。較佳的係，儘可能遠離LED 2100地放置磷光體層2122。在此範例下，由於降低由磷光體層2122背散射而降低由LED 2100重新吸收光2112，故增加藍光至白光之轉換效率。此外，可粗糙化、紋理化、圖案化或成形磷光體層2122之表面2126以增加光擷取。
圖22A係說明依據本發明之較佳具體實施例之一特定改良式LED結構之一示意圖，其中該改良式LED結構2200包括一發射層2202與一基板2204(以及其他層)。LED 2200係導線接合2206至一引線框架2208，其中圖22B顯示引線框架2208之一俯視圖。
LED 2200係嵌入於形成(例如)透鏡的模製物或成形光學元件2210、2212內或與其組合，例如由環氧樹脂或玻璃所製成之倒轉圓錐體形狀。在此具體實施例中，該等成形光學元件2210、2212係形成於相對側上，例如LED 2200之頂部/前側2214及底部/後側2216，其中發射層2202發射從LED 2200之頂部/前側2214及底部/ 後側2216二者擷取的光2218。
引線框架2208包括一透明板2220，其中LED 2200係使用一透明/透光環氧樹脂2222作為一晶粒接合材料而接合至透明板2220。透明板2220可包含玻璃、石英、藍寶石、金剛石或其他對所需發射波長透明的材料，其中透明玻璃板2220將LED 2200所發射之光2218有效地擷取至成形光學元件2212。
優點及改良
本發明之一優點在於，除了該發射層外，該LED之所有層均對發射波長透明，使得透過所有層有效地擷取光。
而且，藉由避免與該LED一起使用有意的鏡面，最小化由該LED重新吸收光，增加光擷取效率，從而增加光輸出功率。
組合一透明電極與粗糙化、紋理化、圖案化或成形表面，同時將該LED嵌入於一成形光學元件或透鏡內，導致增加光擷取。
參考文獻
下列參考文獻係以引用形式併入本文：
1. Appl. Phys. Lett.，56，737-39 (1990)。
2. Appl. Phys. Lett.，64，2839-41 (1994)。
3. Appl. Phys. Lett.，81，3152-54 (2002)。
4. Jpn. J. Appl. Phys.，43，L1275-77 (2004)。
5. Jpn. J. Appl. Phys.，45，L1084-L1086 (2006)。
6. Jpn. J. Appl. Phys.，34，L797-99 (1995)。
7. Jpn. J. Appl. Phys.，43，L180-82 (2004)。
8. Fujii T.、Gao Y.、Sharma R.、Hu E.L.、DenBaars S.P.、Nakamura S.，"經由表面粗糙化增加以GaN為主的發光二極體之擷取效率"，Applied Physics Letters，第84卷，第6號，2004 年2月9日，第855-7頁。
結論
此總結本發明之較佳具體實施例之說明。出於例示及說明目的，已呈現本發明之一或多個具體實施例之前述說明。不希望其詳盡無遺或要將本發明限於所揭示的精確形式。根據以上教導，可進行許多修改及變更。
400‧‧‧發射層
402‧‧‧n型GaN層
404‧‧‧p型GaN層
406‧‧‧第一ITO層
408‧‧‧第二ITO層
410‧‧‧玻璃層
412‧‧‧表面
414‧‧‧表面
416‧‧‧導線接合
418‧‧‧引線框架
420‧‧‧接合墊
422‧‧‧接合墊
424‧‧‧光
426‧‧‧後側
428‧‧‧前側

Claims (28)

  1. 一種發光裝置，其包含：一子基板或引線框架(lead-frame)；一第III族氮化物發光二極體(LED)，其經由該LED之一第一表面裝載於該子基板或引線框架上，其中至少自該LED之該第一表面透過該子基板或引線框架及該LED相對於該第一表面之一第二表面擷取來自該LED之光；一第一成形(shaped)光學元件，其接收自該第一表面擷取之光，其中光自該第一成形光學元件擷取；及一第二成形光學元件，其接收自該第二表面擷取之光，其中光自該第二成形光學元件擷取；其中該第一及第二成形光學元件包含倒轉圓錐體形狀，且光經由該等倒轉圓錐體形狀之發射表面擷取。
  2. 如請求項1之裝置，其中鏡面或鏡面表面係從該LED消除或不附著至該LED以最小化內反射，以便最小化由該LED之一主動區域重新吸收光。
  3. 如請求項2之裝置，其中該LED之該第一及第二表面之至少一者係經粗糙化、紋理化、圖案化或成形以增強光擷取。
  4. 如請求項3之裝置，其中該LED係嵌入於該第一或第二成形光學元件內或與其組合。
  5. 如請求項4之裝置，其中該第一或第二成形光學元件之一或多個表面係經粗糙化、紋理化、圖案化或成形以增強光擷取。
  6. 如請求項5之裝置，其中該第一或第二成形光學元件包括一 磷光體層。
  7. 如請求項6之裝置，其中該磷光體層之一或多個表面係經粗糙化、紋理化、圖案化或成形以增強光擷取。
  8. 如請求項1之裝置，其中該LED係嵌入於該等倒轉圓錐體形狀之一者之內，俾使該倒轉圓錐體形狀之一前表面及一後表面係與該LED之側壁平行，且光經由該倒轉圓錐體形狀之該前表面擷取。
  9. 如請求項8之裝置，其進一步包含在該第一或第二成形光學元件內之一或多個鏡面以將來自該LED之該第一及第二表面之光反射至該第一或第二成形光學元件之一發射表面。
  10. 如請求項1之裝置，其中該等倒轉圓錐體形狀之至少一者之側壁對該光而言係位於相對於該倒轉圓錐體形狀一基底(base)之一臨界角處。
  11. 如請求項1之裝置，其進一步包含在該子基板或引線框架下或在該第一或第二成形光學元件內之一鏡面，其中該鏡面引導自該第二表面擷取之光使其遠離該LED並進入該第一或第二成形光學元件以增加自該LED之一或多個頂側之光擷取。
  12. 如請求項1之裝置，其中該第一或第二成形光學元件包含玻璃。
  13. 如請求項1之裝置，其進一步包含一或多個氧化鋅或氧化銦錫層經定位以電連接該子基板或引線框架至該LED。
  14. 如請求項1之裝置，其中該第一或第二成形光學元件包含環氧樹脂。
  15. 一種製造一發光裝置之方法，其包含：將一第III族氮化物發光二極體(LED)經由該LED之一第一 表面裝載於一子基板或引線框架上，其中至少自該LED之該第一表面透過該子基板或引線框架或該LED相對於該第一表面之一第二表面擷取來自該LED之光；將一第一成形光學元件附著至該LED，其中該第一成形光學元件接收自該第一表面擷取之光且光自該第一成形光學元件擷取；及將一第二成形光學元件附著至該LED，其中該第二成形光學元件接收自該第二表面擷取之光且光自該第二成形光學元件擷取；其中該第一及第二成形光學元件包含倒轉圓錐體形狀，且光經由該等倒轉圓錐體形狀之發射表面擷取。
  16. 如請求項15之方法，其中鏡面或鏡面表面係從該LED消除或不附著至該LED以最小化內反射，以便最小化由該LED之一主動區域重新吸收光。
  17. 如請求項16之方法，其中該LED之該第一及第二表面之至少一者係經粗糙化、紋理化、圖案化或成形以增強光擷取。
  18. 如請求項17之方法，其中該LED係嵌入於該第一或第二成形光學元件內或與其組合。
  19. 如請求項18之方法，其中該第一或第二成形光學元件之一或多個表面係經粗糙化、紋理化、圖案化或成形以增強光擷取。
  20. 如請求項19之方法，其中該第一或第二成形光學元件包括一磷光體層。
  21. 如請求項20之方法，其中該磷光體層之一或多個表面係經粗糙化、紋理化、圖案化或成形以增強光擷取。
  22. 如請求項15之方法，其中該LED係嵌入於該等倒轉圓錐體形狀之一者之內，俾使該倒轉圓錐體形狀之一前表面及一後表面係與該LED之側壁平行，且光經由該倒轉圓錐體形狀之該前表面擷取。
  23. 如請求項22之方法，其進一步包含在該第一或第二成形光學元件內加入一或多個鏡面以將來自該LED之該第一及第二表面之光反射至該第一或第二成形光學元件之一發射表面。
  24. 如請求項15之方法，其中該等倒轉圓錐體形狀之至少一者之側壁對該光而言係位於相對於該倒轉圓錐體形狀一基底(base)之一臨界角處。
  25. 如請求項15之方法，其進一步包含在該子基板或引線框架下或在該第一或第二成形光學元件內加入一鏡面，其中該鏡面引導自該第二表面擷取之光使其遠離該LED並進入該第一或第二成形光學元件以增加自該LED之一或多個頂側之光擷取。
  26. 如請求項15之方法，其中該第一或第二成形光學元件包含玻璃。
  27. 如請求項15之方法，其進一步包含定位一或多個氧化鋅或氧化銦錫層以電連接該子基板或引線框架至該LED。
  28. 如請求項15之方法，其中該第一或第二成形光學元件包含環氧樹脂。
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US10593854B1 (en) 2020-03-17
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