TWI396310B - 發光二極體結構 - Google Patents

發光二極體結構 Download PDF

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TWI396310B
TWI396310B TW098133559A TW98133559A TWI396310B TW I396310 B TWI396310 B TW I396310B TW 098133559 A TW098133559 A TW 098133559A TW 98133559 A TW98133559 A TW 98133559A TW I396310 B TWI396310 B TW I396310B
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emitting diode
light
wall portion
diode structure
lens
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TW098133559A
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TW201114074A (en
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Chia Yun Hsu
Chih Hung Hsu
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Everlight Electronics Co Ltd
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Priority to TW098133559A priority Critical patent/TWI396310B/zh
Priority to EP10160653.1A priority patent/EP2306532A3/en
Priority to US12/772,405 priority patent/US8378368B2/en
Publication of TW201114074A publication Critical patent/TW201114074A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Description

發光二極體結構
本發明係有關於一種發光二極體結構，特別是有關於一種具有改善光型以適合作為裝飾燈之發光二極體結構。
請參閱第1圖，第1圖係習知側向發光二極體結構的示意圖。如圖所示，習知側向發光二極體結構100包括一發光二極體晶片130、一導線架120、以及一透鏡110，各元件分述如下：導線架120用於支撐發光二極體晶片130，並且提供發光二極體晶片130與外部電路(未圖示)之電性連接。
透鏡110包覆發光二極體晶片130以及一部分的導線架120。透鏡110的材質為透明的樹脂，其形狀大致上為圓柱形。在透鏡110的頂部設置有一圓錐形凹槽112，亦即其橫截面為圓形，但在較深處的半徑比在較淺處的半徑為小。
操作時，發光二極體晶片130向上發射光線，在到達凹槽112的內側壁時，大部分光線被反射成為側向光，只有少部分光線穿透成為正向光。
由於習知側向發光二極體結構之正向光較為微弱，因此不利於作為裝飾燈之使用。
有鑑於此，本發明乃提供一種發光二極體結構，具有改良的光型，以適合作為裝飾燈之用。
在本發明之一實施例中，發光二極體結構包括一發光二極體晶片、一導線架、以及一透鏡。導線架與發光二極體晶片電性連接，且導線架支撐發光二極體晶片，透鏡包覆發光二極體晶片及部分的導線架。透鏡的上方形成有一凹槽，凹槽具有一階梯狀的內側壁，內側壁的一上傾斜壁部的斜度大於一下傾斜壁部的斜度。
在本發明之一實施例中，透鏡的凹槽的內側壁更包括一連接壁部，連接壁部連接上傾斜壁部及下傾斜壁部，連接壁部的斜度大於上傾斜壁部及下傾斜壁部的斜度。
在本發明之一實施例中，透鏡包括一柱狀透鏡。
在本發明之一實施例中，透鏡更包括一導角，導角設置於凹槽的內側壁與透鏡的外側壁的交界處。
其中，導角為圓角或斜角。
在本發明之一實施例中，透鏡的凹槽的橫截面為圓形，且凹槽的內徑由上而下漸縮。
在本發明之一實施例中，透鏡的材質為樹脂。
在本發明之一實施例中，發光二極體結構包括一發光二極體晶片、一導線架、以及一柱狀透鏡。導線架與發光二極體晶片電性連接，且支撐發光二極體晶片，柱狀透鏡包覆發光二極體晶片及部分的導線架，且其上方形成有一凹槽，其中凹槽具有一階梯狀的內側壁，內側壁的一上傾斜壁部的斜度大於一下傾斜壁部的斜度，內側壁的一連接壁部連接上傾斜壁部及下傾斜壁部，連接壁部的斜度大於上傾斜壁部及下傾斜壁部的斜度。
在本發明之一實施例中，透鏡更包括一導角，導角設置於凹槽的內側壁與柱狀透鏡的外側壁的交界處。
其中，導角為圓角或斜角。
在本發明之一實施例中，柱狀透鏡的凹槽的橫截面為圓形，且凹槽的內徑由上而下漸縮。
在本發明之一實施例中，柱狀透鏡的材質為樹脂。
為使本發明之上述目的、特徵、和優點能更明顯易懂，下文特舉較佳實施例並配合所附圖式做詳細說明。
請參閱第2圖，第2圖係依據本發明之發光二極體結構之第一實施例的示意圖。如圖所示，發光二極體結構200包括一發光二極體晶片230、一導線架220、以及一透鏡210，各元件分述如下：導線架220支撐發光二極體晶片230，並且提供發光二極體晶片230與外部電路(未圖示)之電性連接。
透鏡210包覆發光二極體晶片230以及一部分的導線架220。在本發明實施例中，透鏡210的材質可為透明的樹脂，其形狀大致上為圓柱形。在透鏡210的頂部設置有一階梯狀的凹槽212，此凹槽212雖然不是圓錐形，但其橫截面仍然為圓形，且在較深處的內徑仍然比在較淺處的內徑為小。
上述凹槽212的內側壁包括有一上傾斜壁部216、一下傾斜壁部214及一連接壁部215，連接壁部215係連接上傾斜壁部216及下傾斜壁部214，其中連接壁部215的傾斜角θ大於上傾斜壁部216的傾斜角θ2 及下傾斜壁部214的傾斜角θ1 。
操作時，發光二極體晶片230向上發射光線，在到達凹槽212的內側壁的下傾斜壁部214及上傾斜壁部216時，一部分光線被反射成為側向光，另一部分光線則穿透成為正向光。
請參閱第3圖，第3圖係第2圖之發光二極體結構的局部放大圖。其中，凹槽的內側壁的上傾斜壁部216與透鏡的外側壁218交界處設置有一導角217，可用於增加正向光的強度。在本實施例中，此導角217為一圓角，在本發明另一實施例中，此導角217例如是一斜角。
另外，凹槽212採階梯狀設計，可以在視覺上產生發光部分被拉長的效果。請同時參閱第2圖以及第4圖，第4圖係第2圖之發光二極體結構的另一局部放大圖。其中，凹槽212在較深處的內側壁的下側壁部214之傾斜角θ1比在較淺處的內側壁的上側壁部216之傾斜角θ2為小。
經由以上結構設計，可使發光二極體結構200的光型更加適合作為裝飾燈之使用，底下以電腦模擬來說明本發明之第一實施例與習知側向發光二極體結構的光型差異：
請參閱第5圖，第5圖係以電腦模擬本發明之第一實施例與習知側向發光二極體結構所得到的發光角度分布圖。由圖可知，本發明之第一實施例在發光二極體結構下方(90°以上，-90°以下)的光量減少，而在0°方向的光量增加，符合預期。
請參閱第6圖所示之本發明之發光二極體結構的第二實施例，其中，在凹槽的內側壁的上傾斜壁部216’與透鏡的外側壁218’交界處設置有一斜角217’，亦能增加正向光的強度。至於其他構造與第一實施例相同，因此省略說明。
雖然本發明已以較佳實施例揭露如上，然其並非用以限定本發明，任何其所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作任意之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
 習知技術
100．．．側向發光二極體結構
110．．．透鏡
112．．．凹槽
120．．．導線架
130．．．發光二極體晶片
本發明 第一實施例
200．．．發光二極體結構
210．．．透鏡
212．．．凹槽
214．．．內側壁的下傾斜壁部
215．．．內側壁的連接壁部
216．．．內側壁的上傾斜壁部
217．．．導角
218．．．外側壁
220．．．導線架
230．．．發光二極體晶片
θ．．．內側壁的連接壁部的傾斜角
θ1 ．．．內側壁的下傾斜壁部的傾斜角
θ2 ．．．內側壁的上傾斜壁部的傾斜角
第二實施例
216’．．．內側壁
217’．．．導角
218’．．．外側壁
第1圖係習知側向發光二極體結構之示意圖。
第2圖係依據本發明之發光二極體結構之第一實施例的示意圖。
第3圖係第2圖之發光二極體結構的局部放大圖。
第4圖係第2圖之發光二極體結構的另一局部放大圖。
第5圖係以電腦模擬本發明之第一實施例與習知側向發光二極體結構所得到的發光角度分布圖。
第6圖係依據本發明之發光二極體結構之第二實施例的局部放大圖。
200．．．發光二極體結構
210．．．透鏡
212．．．凹槽
214．．．內側壁的下傾斜壁部
216．．．內側壁的上傾斜壁部
218．．．外側壁
220．．．導線架
230．．．發光二極體晶片

Claims (12)

  1. 一種發光二極體結構，包括：一發光二極體晶片；一導線架，與該發光二極體晶片電性連接，該導線架支撐該發光二極體晶片；以及一柱狀透鏡，包覆該發光二極體晶片及部分的該導線架，該透鏡的上方形成有一凹槽，該凹槽具有一階梯狀的內側壁，該內側壁的一上傾斜壁部的斜度大於一下傾斜壁部的斜度；其中該透鏡更包括一導角，該導角設置於該凹槽的內側壁與該透鏡的外側壁的交界處，該導角係配置用於增加正向光的強度。
  2. 如申請專利範圍第1項所述之發光二極體結構，其中該透鏡的凹槽的內側壁更包括一連接壁部，該連接壁部連接該上傾斜壁部及該下傾斜壁部，該連接壁部的斜度大於該上傾斜壁部及該下傾斜壁部的斜度。
  3. 如申請專利範圍第1項所述之發光二極體結構，其中該導角為圓角。
  4. 如申請專利範圍第1項所述之發光二極體結構，其中該導角為斜角。
  5. 如申請專利範圍第1項所述之發光二極體結構，其中該凹槽的橫截面為圓形，且該凹槽的內徑由上而下漸縮。
  6. 如申請專利範圍第1項所述之發光二極體結構，其中該透鏡的材質為樹脂。
  7. 一種發光二極體結構，包括：一發光二極體晶片；一導線架，與該發光二極體晶片電性連接，該導線架支撐該發光二極體晶片；以及一柱狀透鏡，包覆該發光二極體晶片及部分的該導線架，該透鏡的上方形成有一凹槽，該凹槽具有一階梯狀的內側壁，其中該內側壁的一上傾斜壁部的斜度大於一下傾斜壁部的斜度，該內側壁的一連接壁部連接該上傾斜壁部及該下傾斜壁部，該連接壁部的斜度大於該上傾斜壁部及該下傾斜壁部的斜度。
  8. 如申請專利範圍第7項所述之發光二極體結構，其中該柱狀透鏡更包括一導角，該導角設置於該凹槽的內側壁與該透鏡的外側壁的交界處。
  9. 如申請專利範圍第8項所述之發光二極體結構，其中該導角為圓角。
  10. 如申請專利範圍第8項所述之發光二極體結構，其中該導角為斜角。
  11. 如申請專利範圍第7項所述之發光二極體結構，其中該凹槽的橫截面為圓形，且該凹槽的內徑由上而下漸縮。
  12. 如申請專利範圍第7項所述之發光二極體結構，其中該柱狀透鏡的材質為樹脂。
TW098133559A 2009-10-02 2009-10-02 發光二極體結構 TWI396310B (zh)

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TW098133559A TWI396310B (zh) 2009-10-02 2009-10-02 發光二極體結構
EP10160653.1A EP2306532A3 (en) 2009-10-02 2010-04-22 Light-emitting diode structure
US12/772,405 US8378368B2 (en) 2009-10-02 2010-05-03 Light-emitting diode structure

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JP2010512662A (ja) 2006-12-11 2010-04-22 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 透明発光ダイオード
CN102759190B (zh) * 2012-07-27 2014-07-09 彭丹阳 一种利用灶台热余热发电和加热水的系统
US11592166B2 (en) 2020-05-12 2023-02-28 Feit Electric Company, Inc. Light emitting device having improved illumination and manufacturing flexibility
US11876042B2 (en) 2020-08-03 2024-01-16 Feit Electric Company, Inc. Omnidirectional flexible light emitting device

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