1V1293δ^24οο/γ 八、新型說明： 【新型所屬之技術領域】 本们作疋有關於一種半導體（semicon(Juctor)元件的 結構’且特別是有關於一種發光二極體（Light Emitting Diode，LED)的封裝結構。 【先前技術】 j III-V族化合物半導體材料所構成的發光二極體是 一種寬能隙（bandgap)的發光元件，其發出之光線涵蓋所有 可見光的波段。近年來，更由於發光二極體朝向多色彩極 高亮度化發展，發光二極體的應用範圍已拓展至大型戶外 顯示看板及父通號諸燈等，未來甚至可以取代鎢絲燈和水 銀燈以成為兼具省電和環保的照明燈源。 發光一極體的基本結構包含一半導體層，其中半導體 層是由p型摻雜半導體層（p type doped semiconductor layer)、η 型摻雜半導體層（n type doped semiconductor layer) 與位於p型摻雜半導體層及n型摻雜半導體層間之發光層 (light emitting layer)所組成，而發光二極體的發光效率高 低是取決於發光層的量子效率以及發光二極體的光取出效 率（light extraction efficiency)，其中增加光取出效率的關 鍵在於減少發光層所發出的光在發光二極體中反射。然 而’由於III-V族化合物半導體材料有較高的光折射係數 (coefficient of refraction)，因此發光層發出之光線容易在半 導體層内全反射，導致大部分的光線會出光於發光二極體 之側邊。也就是說，發光二極體正面的亮度無法提升。 ]V[293z^2^fldoc/y 圖1是習知之一種發光二極體的示意圖。請參考圖J， 習知之發光二極體100包括一基板（substrate) 11〇、—半導 體層（semiconductor layer) 120、一 導電層（c〇nductive layer)130、一反射層（reflective layer)140 以及兩電極 15〇。 半導體層120是位於基板11〇上，其中半導體層12〇由下 而上依序包括一 η型摻雜半導體層122、一發光層124、一 Ρ型摻雜半導體層126。另外，導電層HO是位於ρ摻雜半 導體層126上，反射層140則是位於導電層13〇上，而兩 電極150則分別位於η型摻雜半導體層122與反射層14〇 上’其中兩電極150是分別電性連接至η摻雜半導體層122 與Ρ型摻雜半導體層126。 ^圖2是習知之一種發光二極體封裝結構的示意圖。請 參考圖2,習知之發光二極體封裝結構2〇是利用覆晶卿 chip)技術將上述之發光二極體100電性連接於承載器200 上L其中發光二極體1GG之兩電極150是藉由凸塊22與承 載器200電性連接。#在兩電極15Q f桃加電流時，發光 f = ΐ因為電流通過而發出光線。發光層m所發出的 癸nt ^身:層140以朝向電極150的反侧發出，使得 二:！出的光線可傳遞至外界環境，以提高發光 一極體100之光取出效率。 發光技術以光反料較佳之結構來增加 由反射結i反射$出效率。然而，發光層所發出的光線經 婵加了 =後被丰I挪大部分光線仍會反射經過半導體層而 先、▲被+¥體層叫的機會，導致發光二極體之光 M2935524〇c/y =效率仍無法大幅提高。因此’如何有效地讓發光層所 务出的光線順利地傳遞至外界環境中， 極體的光取出效率是一重要課題。 韦 尤— 【新型内容】 ，一本創作之目的是提供一種發光二極體封裝結構，其發 光一極體具有較佳的光取出效率。 士為達上述或是其他目的，本創作提出一種發光二極體 封衣二構’其包括一發光二極體、一承載器以及一反射層。 發，一極體則包括一基板、一半導體層、一第一電極以及 一第二電極，其中半導體層配置於基板上，且具有一粗糙 表面、。此外’半導體層包括一第一型推雜半導體層、一發 光廣以及-第二型摻雜半導體層，其中發光層位於第 摻雜半導體層與第二型摻雜半導體層之間。另外，第— 極是位於第-型摻雜半導體層上方，且電性連接於第一】 務雜半導體層。第二電極則是位於第二型摻雜半導體層 方，且電性連接於第二型摻雜半導體層。 曰 承上所述，承載器之表面具有一^一接點與一第 點’而發光-極體之第一電極與第二電極是朝向承載器以 分別ΐί第接點與第二接點電性連接。反射層則是配置於 承載為朝向發光二極體之表面上。 在本創作之-實施例中，基板之表面例如為粗繞表 面。 χ 在本創作之-實施例中，發光二極體封裝結構更 二凸塊，分別配置於第—電極與第二電極上，其中第一電 '〇c/y M293&24 電極分別藉由這些凸塊和第—接點與第二接點電 一尸Ϊ本創作之：實施例中，發光二極體封裝結構更包括 干"、’配置於第-電極與第二電極上，1中第— 第二電極#轉料分別與第—接點與第二接點電性^接t =//ft—，例巾，發光二極體封1纟#構之ϋ 1脰更包括一透光導電層（加nsp_t conductive 。透料電層是配置於半導體層上，且第—電極與 第一電極是位於透光導電層上。 在本創作之-實施例中，透光導電層之材質例如是鋼 錫乳化物（Indium Tin 0xide, IT0)、銦鋅氧化物⑽_1V1293δ^24οο/γ 8. New description: [New technical field] This is a semiconductor (semicon (Juctor) device structure' and especially related to a light emitting diode (LED) [Previous Technology] A light-emitting diode composed of a III III-V compound semiconductor material is a bandgap light-emitting element that emits light covering all visible light bands. Due to the development of multi-color and high-brightness of the light-emitting diodes, the application range of the light-emitting diode has been extended to large outdoor display panels and parent-number lamps, etc. In the future, tungsten filament lamps and mercury lamps can be replaced to become a province. Electrical and environmentally friendly lighting source. The basic structure of the light emitting body comprises a semiconductor layer, wherein the semiconductor layer is a p type doped semiconductor layer, a n type doped semiconductor layer (n type doped semiconductor layer) Layer) and a light emitting layer between the p-type doped semiconductor layer and the n-type doped semiconductor layer, and the light emitting layer The luminous efficiency of the polar body depends on the quantum efficiency of the light emitting layer and the light extraction efficiency of the light emitting diode. The key to increasing the light extraction efficiency is to reduce the light emitted by the light emitting layer in the light emitting diode. Reflection. However, because III-V compound semiconductor materials have a high coefficient of refraction, the light emitted by the luminescent layer is easily totally reflected in the semiconductor layer, causing most of the light to illuminate the luminescent diode. That is, the brightness of the front side of the light-emitting diode cannot be improved. ]V[293z^2^fldoc/y Figure 1 is a schematic diagram of a conventional light-emitting diode. Please refer to Figure J, the conventional light The diode 100 includes a substrate 11 〇, a semiconductor layer 120, a conductive layer 130, a reflective layer 140, and two electrodes 15 〇. Is located on the substrate 11 ,, wherein the semiconductor layer 12 依 sequentially includes an n-type doped semiconductor layer 122, a luminescent layer 124, and a 掺杂-type doped semi-conductor from bottom to top. The layer 126. In addition, the conductive layer HO is located on the p-doped semiconductor layer 126, the reflective layer 140 is located on the conductive layer 13A, and the two electrodes 150 are respectively located on the n-type doped semiconductor layer 122 and the reflective layer 14 The two electrodes 150 are electrically connected to the n-doped semiconductor layer 122 and the erbium-doped semiconductor layer 126, respectively. FIG. 2 is a schematic diagram of a conventional light emitting diode package structure. Referring to FIG. 2, the conventional LED package structure 2 is electrically connected to the light-emitting diode 100 by using a chip-on-chip technology. The two electrodes 150 of the light-emitting diode 1GG are 150. It is electrically connected to the carrier 200 by the bumps 22. # When the two electrodes 15Q f peach current, the light f = ΐ emits light because the current passes. The 癸nt body of the luminescent layer m: the layer 140 is emitted toward the opposite side of the electrode 150, so that two:! The light emitted can be transmitted to the external environment to improve the light extraction efficiency of the light-emitting body 100. The illuminating technique increases the efficiency of reflection by the reflection junction i with a preferred structure of light reflection. However, the light emitted by the luminescent layer is added to the singularity, and most of the light is still reflected through the semiconductor layer, and the ▲ is called by the +¥ body layer, resulting in the light of the light-emitting diode M2935524〇c/ y = efficiency still can't be greatly improved. Therefore, how to effectively transmit the light emitted by the luminescent layer to the external environment, the light extraction efficiency of the polar body is an important issue. Wei You - [New Content], the purpose of one creation is to provide a light-emitting diode package structure, the light-emitting body has better light extraction efficiency. For the above or other purposes, the present invention proposes a light-emitting diode encapsulation structure comprising a light-emitting diode, a carrier and a reflective layer. The emitter includes a substrate, a semiconductor layer, a first electrode, and a second electrode, wherein the semiconductor layer is disposed on the substrate and has a rough surface. Further, the 'semiconductor layer includes a first type of interrogating semiconductor layer, a light emitting and a second type doped semiconductor layer, wherein the light emitting layer is located between the first doped semiconductor layer and the second doped semiconductor layer. In addition, the first electrode is located above the first-type doped semiconductor layer and electrically connected to the first semiconductor layer. The second electrode is located on the second type doped semiconductor layer and electrically connected to the second type doped semiconductor layer. As described above, the surface of the carrier has a contact point and a first point ' while the first electrode and the second electrode of the light-emitting body are oriented toward the carrier to respectively connect the first contact and the second contact Sexual connection. The reflective layer is disposed on the surface that is carried toward the light emitting diode. In the present invention, the surface of the substrate is, for example, a rough-wound surface. In the embodiment of the present invention, the light emitting diode package structure has two more bumps disposed on the first electrode and the second electrode, wherein the first electric '〇c/y M293& 24 electrodes respectively The bump and the first contact and the second contact are electrically formed. In the embodiment, the LED package structure further includes a dry ", disposed on the first electrode and the second electrode, 1 The first-second electrode #-transfer material and the first-contact point and the second-contact point are electrically connected to t=//ft-, and the towel, the light-emitting diode package 1纟#构之ϋ1脰a photoconductive layer (adding nsp_t conductive. The dielectric layer is disposed on the semiconductor layer, and the first electrode and the first electrode are on the light-transmitting conductive layer. In the present invention - the material of the transparent conductive layer For example, steel tin emulsion (Indium Tin 0xide, IT0), indium zinc oxide (10) _
Zmc 〇xlde，IZO)、氧化紹鋅（Az〇)、氧化鋅（Zn〇)、氧化 鎳（NiO)或鎳金合金（NiAu)。 在本創作之一實施例中，第一型摻雜半導體層例如是 位於基板上，發光層位於第一型摻雜半導體層上，而第二 型摻雜半導體層則位於發光層上。 在本創作之一實施例中，上述之第一型摻雜半導體層 可以為p型摻雜半導體層，而第二型摻雜半導體層可以為 η型摻雜半導體層。當然，第一型摻雜半導體層亦可以為n 型摻雜半導體層，而第二型摻雜半導體層亦可以為ρ型摻 雜半導體層。 > 在本創作之一實施例中，基板之材質例如是氧化鋁單 晶（Sapphire)、碳化矽（6H_SiC 或 4H-SiC)、矽（Si)、氧 化辞（ZnO)、砷化鎵（GaAs)、尖晶石（MgAl2〇4)或一晶 9 N1293^2^doc/y 格常數接近於氮化物半導體之單晶氧化物。 在本創作之一實施例中，發光層例如是一多重量子井 (multiple quantum well)發光層。 在本創作之一實施例中，承載器例如是矽基板，氮化 銘（A1N)基板、金屬基板、或合金基板或陶瓷基板。 在本創作之一實施例中，承載器包括導線架 〇eadframe)、印刷電路板（Print Circuit Board，PCB)或塑膠 ，導腳晶片承載器（Plastic Lead Chip Carder，pLCC)。 本創作再提出一種發光二極體封裝結構，其與上述之 發光二極體封裝結構類似，惟其主要差異在於··此發光二 極體封裝結構之承載器是以一粗糙承載表面來取代上述之 反射層。 在本創作之發光二極體封裝結構中，因採用具有粗糙 表面、、、Ό構的半導體層以及同樣具有粗糙表面的承載器，使 知發光層所發出的光線可順利地傳遞至外界環境中，而有 效地提升發光二極體的光取出效率。此外，本創作亦採用 I 具有粗糙表面結構的半導體層以及配設有反射層的承載器 末k升I光一極體的光取出效率。 4為讓本創作之上述和其他目的、特徵和優點能更明顯 易懂，下文特舉較佳實施例，並配合所附圖式，作詳細說 明如下。 【實施方式】 本創作之發光二極體封裝結構包括一發光二極體以 及一承载器，其中發光二極體是利用覆晶技術以電性連接 10 M293mc/y 於承載器上。在本實施例中，發光二極體可以是 -極體晶以翁_咖。_)、紫外光發光二極體曰^ (浙avidet _ LED chip)，或是其他適於發出不同 發光二極體’而承載器可妓基板（substrate)或是導線加 (lead frame)。了文將先針對本創作較佳實施例之重= 二極體封裝結構做詳細介紹。 ^ ^是賴作難實施例之—種發光二域封裝結構 4光-極體的不意圖。請參考圖3，發光二極體遍主 要J由-基板310、-半導體層Μ。、—第—電極％。以及 -第二電極340所構成。在本實施例中，半導體層娜是 配置於基板310上，且半導體層32〇具有一粗輪表面似。 此外’半導體層32〇包括—第—型摻雜半導體層似、一 發光層326以及-第二型摻雜半導體層328，其中發光層 326是位於第—型摻雜半導體層324 •第二型摻雜^導^ 層328之間。第-電極33G是位於第—型摻雜半導體層似 上方’且第-電極330電性連接於第一型摻雜半導曰體層 324。相對地’第二電極34〇是位於第二型推雜半導體層 328上方，且第二電極揭電性連接於第二型換雜半導體 層 328。 此外，基板310例如具有_粗链表自312，其中粗植 表面312例如是對基板310進行一表面處理而形成的。舉 例來說，表面處理的方式可叹採用研磨方式來使基板 310上形成不規則性的粗縫表面，或是以反應式離子独刻 (Reactive Ion Etching，RIE)的方式來使基板31〇上形成具 ΝΙ2·9 3^_；2^〇c/y 規則性或週期性變化之粗糙表面。在此，本創作並不限定 粗縫表面的結構變化。另外，基板310的材質可以是氧化 I呂單晶、碳化矽、矽、氧化鋅、砷化鎵、尖晶石或一晶 格常數接近於氮化物半導體之單晶氧化物。同樣地，粗 糙表面322的製作方式例如是相同於粗糙表面312的製作 方式。 在本實施例中，第一型摻雜半導體層324例如是位於 基板310上，發光層326例如是位於第一型摻雜半導體層 I 324上’而第二型摻雜半導體層328例如是位於發光層326 上，其中發光層326例如是一多重量子井發光層。此外， 半導體層320之粗糙表面322例如是在第二型摻雜半導體 層328上。 〆嘴承上所述，第一型摻雜半導體層324例如為p型摻雜 半士體層’而第二型摻雜半導體層328例如為η型摻雜半 導體層。然而，在本創作之其他實施例中，第一型摻雜半 導體層324亦可以是!!型摻雜半導體層，而第二型摻雜半 | ♦體層328可以是ρ型換雜半導體層。上述之第〆型換雜 半$體層3Μ與第二型摻雜半導體層328可以由ΙΠ_ν族 化合^半導體材料所構成，而III-V族化合物半導體材料 之材貝例如疋氮化鎵（GaN)、磷化鎵（GaP)或磷砷化鎵 (GaAsP) 〇 、在本創作之一較佳實施例中，發光二極體300更包括 j光導電層35Q，其中透光導電層35〇例如是配置於半 導胆層3%上，而第一電極330與第二電極340例如是位 12 :/y M29SS24i〇c, 於透光導電層350上。上述之透光導電層现可將施加於 弟-電極33〇和第二電極34〇之電流平均分散於半導體層 320上，使得發光二極體3〇〇不僅具有良好的電性性^ 更具有較佳的發光效率。承上述，透光導電層35〇的材 例如是銦錫氧化物、銦鋅氧化物、氧化鋁辞、氧化鋅、 化鎳、鎳金合金或其他透光導電材質。 乳 上文是對發光二極體的結構作說明，下文將針 叙光一極體封裝結構作詳細說明。 圖4是本創作較佳實施例之一種發光二極 的示意圖。請參考圖4’在本創作之發光二極體封== =中⑽發光二極體300是利用覆晶技術以電性連接於承载 裔400上。承載器4〇〇具有一粗糙承載表面4ι〇，且 =〇〇包括位於祕承面41G上之—第—接點42_ 一接點43〇，而發光二極體300之第一電極33〇與第 :電極340是朝向承載器4〇〇以分別與第一接點42〇鱼 接”』430电性連接。當然，粗糙承載表面4忉的掣 式例如是相同於粗糙表面312的製作方式。 又 f本創作-較佳實施例中，發光二極體封聚結構忉 已括—凸塊42,這些凸塊42是分 盥第-帝杌， 电極33〇 ϊ別中第一電極330與第二電極340則 =另]猎由廷些凸塊42和第一接點420 & + 凸塊42的材質例如是錫鉛合金等適當材t。 Ί:以用焊料來取代上述之凸塊。 田材貝 請繼續參考圖4，本實施例主要是藉由半導體層32〇 13 M2'93Ss24〇c/y =2Γ:。之—面(粗糙表面322)以及承載器400朝 32ό所、300之一面（粗糙承載表面410)來使發光層 封之光線傳遞至外界環境巾。因此，發光二極體 面&L0之發光效率可有效地提升。當然，具有粗經表 I結槿Γηϋ10與半導體層32G之介面）的發光二極體封 ’、此有效地增加發光二極體3⑽之光取出效率。 構的;意ί本實5施:之另-種發光二極細結 體封裝结構4〇(如圖4所示） m4〇5h "要差，、在於·本實施例之發光二極體封裝結 極顺反射層（reflecti〇n layer)44來取代上述發光二 配ϊϋ衣結構40之粗链承载表面410，其中反射層44是 =承載器400朝向發光二極體3〇〇之表面上。同樣地， 發射層Μ之發光^^極體封裝結構40,亦能有良好的 在較佳貫施例中，反射層可以與粗經承載表面共形 _ (Conformal)，形成一擴散形式反射層⑼池如㊁ reflector)，以大幅增加發光二極體產生之光線被反射層反 射出發光二極體的機率，進而提高發^三極體封裝結構的 發光效率。 相較於習知技術之發光二極體所發出之光線容易反 射回發光二極體内部，而導致光線被發光二極體内部材料 吸收的現象，本創作之發光二極體封裝結構是藉由多個粗 糙表面，或是藉由反射層與粗糙表面的搭配來避免發光層 14 〇c/y ]V12937§2^d 所叙出之光線在發光二極體内部入 ^極體發射至外界環境之光線;^ 以:以光:鋪所發出之光線可糊^ 光效^认中，進而大幅提升發光二極體封I結構之發 ，然本創作U較佳實關減如上，然其並非用以 本創作，任何熟習此技藝者，在不脫離本創作之精神 t轭，内，當可作些許之更動與潤飾，因此本創作之保護 範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 圖1是習知之一種發光二極體的示意圖。 圖2，習知之一種發光二極體封裝結構的示意圖。 立旅f 3是本創作較佳實施例之一種發光二極體封裝結構 其毛先二極體的示意圖。 ，4是本創作較佳實施例之一種發光二極體封裝結構 不忍圖。 構的本創作較佳實施例之另—種發光二極體封裝結 【主要7L件符號說明】 =二：發光二極體封裝結構 22 :凸塊 .發光二極體封裝結構 40、40， 凸塊 42 15 ]M2 9 3為 2^doc/y 44 :反射層 100 :發光二極體 110 :基板 120 :半導體層 122 : η型摻雜半導體層 124 :發光層 126 : ρ型摻雜半導體層 130 :導電層Zmc 〇xlde, IZO), zinc oxide (Az〇), zinc oxide (Zn〇), nickel oxide (NiO) or nickel gold alloy (NiAu). In one embodiment of the present invention, the first type of doped semiconductor layer is, for example, on the substrate, the light emitting layer is on the first type doped semiconductor layer, and the second type doped semiconductor layer is on the light emitting layer. In an embodiment of the present invention, the first type doped semiconductor layer may be a p-type doped semiconductor layer, and the second type doped semiconductor layer may be an n-type doped semiconductor layer. Of course, the first type doped semiconductor layer may also be an n-type doped semiconductor layer, and the second type doped semiconductor layer may also be a p-type doped semiconductor layer. > In an embodiment of the present invention, the material of the substrate is, for example, alumina single crystal (Sapphire), tantalum carbide (6H_SiC or 4H-SiC), bismuth (Si), oxidized (ZnO), gallium arsenide (GaAs). ), spinel (MgAl2〇4) or a crystal 9 N1293^2^doc/y lattice constant is close to the single crystal oxide of the nitride semiconductor. In one embodiment of the present invention, the luminescent layer is, for example, a multiple quantum well luminescent layer. In one embodiment of the present invention, the carrier is, for example, a ruthenium substrate, an iridium (A1N) substrate, a metal substrate, or an alloy substrate or a ceramic substrate. In one embodiment of the present invention, the carrier includes a lead frame 、eadframe, a Print Circuit Board (PCB) or a plastic, and a Plastic Lead Chip Card (PLCC). The present invention further proposes a light emitting diode package structure similar to the above-described light emitting diode package structure, but the main difference is that the carrier of the light emitting diode package structure is replaced by a rough bearing surface. Reflective layer. In the light-emitting diode package structure of the present invention, the light emitted by the light-emitting layer can be smoothly transmitted to the external environment by using a semiconductor layer having a rough surface, a germanium structure, and a carrier having a rough surface. The light extraction efficiency of the light-emitting diode is effectively improved. In addition, the present invention also employs a light extraction efficiency of a semiconductor layer having a rough surface structure and a carrier at the end of the k-litre I photo-polar body. The above and other objects, features, and advantages of the present invention will become more apparent from the description of the appended claims. [Embodiment] The LED package structure of the present invention comprises a light-emitting diode and a carrier, wherein the light-emitting diode is electrically connected to the carrier by 10 M293mc/y. In this embodiment, the light emitting diode may be a polar body. _), ultraviolet light emitting diode 曰 ^ (Zhe avidet _ LED chip), or other suitable for emitting different light-emitting diodes' and the carrier can be a substrate or a lead frame. The paper will first introduce the weight=diode package structure of the preferred embodiment of the present invention. ^ ^ is a difficult embodiment - a kind of light-emitting two-domain package structure 4 light-polar body is not intended. Referring to FIG. 3, the light-emitting diodes are mainly composed of a substrate 310 and a semiconductor layer. , - the first electrode %. And - a second electrode 340. In the present embodiment, the semiconductor layer is disposed on the substrate 310, and the semiconductor layer 32 has a rough wheel surface. In addition, the 'semiconductor layer 32' includes a first-type doped semiconductor layer, a light-emitting layer 326, and a second-type doped semiconductor layer 328, wherein the light-emitting layer 326 is located on the first-type doped semiconductor layer 324. Doped between the layers 328. The first electrode 33G is located above the first-type doped semiconductor layer and the first electrode 330 is electrically connected to the first-type doped semiconductor body layer 324. The second electrode 34 is located above the second type of semiconductor layer 328, and the second electrode is electrically connected to the second type semiconductor layer 328. Further, the substrate 310 has, for example, a thick chain list 312 in which the rough implant surface 312 is formed, for example, by subjecting the substrate 310 to a surface treatment. For example, the surface treatment may be performed by using a grinding method to form an irregular rough surface on the substrate 310, or by a reactive ion etch (RIE) method. A rough surface having a regular or periodic variation of ΝΙ2·9 3^_; 2^〇c/y is formed. Here, this creation does not limit the structural changes of the rough surface. Further, the material of the substrate 310 may be an oxidized single crystal, tantalum carbide, niobium, zinc oxide, gallium arsenide, spinel or a single crystal oxide having a crystal constant close to that of the nitride semiconductor. Similarly, the rough surface 322 is made, for example, in the same manner as the rough surface 312. In the present embodiment, the first type doped semiconductor layer 324 is located on the substrate 310, for example, the light emitting layer 326 is located on the first type doped semiconductor layer I 324 and the second type doped semiconductor layer 328 is located, for example. On the luminescent layer 326, the luminescent layer 326 is, for example, a multiple quantum well luminescent layer. Further, the rough surface 322 of the semiconductor layer 320 is, for example, on the second type doped semiconductor layer 328. As described above, the first type doped semiconductor layer 324 is, for example, a p-type doped semiconductor layer ', and the second type doped semiconductor layer 328 is, for example, an n-type doped semiconductor layer. However, in other embodiments of the present invention, the first type doped semiconductor layer 324 may also be a !! type doped semiconductor layer, and the second type doped half body layer 328 may be a p-type doped semiconductor layer. The above-mentioned 〆-type half-ply body layer 3 Μ and the second-type doped semiconductor layer 328 may be composed of a ΙΠ ν 族 化 半导体 semiconductor material, and a III-V compound semiconductor material such as lanthanum gallium nitride (GaN). , gallium phosphide (GaP) or gallium arsenide (GaAsP) 〇. In a preferred embodiment of the present invention, the light-emitting diode 300 further includes a j-light conductive layer 35Q, wherein the light-transmitting conductive layer 35 is, for example, The first electrode 330 and the second electrode 340 are disposed on the light-transmissive conductive layer 350, for example, at a position of 12:/y M29SS24i〇c. The above-mentioned light-transmitting conductive layer can now uniformly distribute the current applied to the second electrode 33 〇 and the second electrode 34 于 on the semiconductor layer 320, so that the light-emitting diode 3 〇〇 not only has good electrical properties but also has Preferred luminous efficiency. In the above, the material of the light-transmitting conductive layer 35 is, for example, indium tin oxide, indium zinc oxide, aluminum oxide, zinc oxide, nickel, nickel gold alloy or other light-transmitting conductive material. Milk The above is a description of the structure of the light-emitting diode. The following is a detailed description of the light-emitting diode package structure. Figure 4 is a schematic illustration of a light emitting diode of the preferred embodiment of the present invention. Referring to Fig. 4', in the present invention, the light-emitting diode package === (10), the light-emitting diode 300 is electrically connected to the carrier 400 by flip chip technology. The carrier 4A has a rough bearing surface 4ι〇, and =〇〇 includes a first contact 42_ a contact 43〇 on the secret bearing surface 41G, and the first electrode 33 of the light emitting diode 300 The electrode 340 is electrically connected to the carrier 4 to be respectively connected to the first contact 42. Of course, the rough bearing surface 4 is, for example, the same as the rough surface 312. In the preferred embodiment, the light-emitting diode encapsulation structure 忉 includes a bump 42 which is a bifurcated body, and the electrode 33 identifies the first electrode 330 The second electrode 340 is a material such as a tin-lead alloy or the like. For example, it is a solder material instead of the above-mentioned bump. Please refer to FIG. 4 for Tiancaibei. This embodiment mainly uses the semiconductor layer 32〇13 M2'93Ss24〇c/y=2Γ: the surface (rough surface 322) and the carrier 400 toward 32ό, 300 One side (rough bearing surface 410) is used to transmit the light of the luminescent layer seal to the external environmental towel. Therefore, the luminous efficiency of the LED surface & L0 Effectively improving. Of course, the light-emitting diode package having the interface between the thick surface I and the semiconductor layer 32G, which effectively increases the light extraction efficiency of the light-emitting diode 3 (10). 5: another kind of light-emitting diode package structure 4〇 (shown in Figure 4) m4〇5h " is poor, lies in the embodiment of the light-emitting diode package junction para-reflective layer (reflecti 〇n layer) 44 replaces the thick chain carrying surface 410 of the above-described light-emitting two-coating structure 40, wherein the reflective layer 44 is = the carrier 400 faces the surface of the light-emitting diode 3〇〇. Similarly, the emitting layer The illuminating device package structure 40 can also have a good performance. In a preferred embodiment, the reflective layer can be conformal with the rough bearing surface to form a diffused reflective layer (9), such as a reflector. In order to greatly increase the probability that the light generated by the light-emitting diode is reflected by the reflective layer to emit the light-emitting diode, thereby improving the luminous efficiency of the semiconductor package structure, the light emitted by the light-emitting diode of the prior art is easy. Reflected back inside the light-emitting diode, causing light The phenomenon that the line is absorbed by the inner material of the light-emitting diode, the light-emitting diode package structure of the present invention avoids the light-emitting layer 14 〇c/y by a plurality of rough surfaces or by the combination of the reflective layer and the rough surface] V12937§2^d The light emitted by the illuminating diode inside the illuminating diode is emitted into the external environment; ^ To: Light: The light emitted by the slab can be pasted, the light effect is recognized, and the light is greatly enhanced. The structure of the light-emitting diode is sealed, but the creation of U is better than the above. However, it is not used for this creation. Anyone who is familiar with this skill can do it without departing from the spirit of this creation. There are a few changes and refinements, so the scope of protection of this creation is subject to the definition of the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view of a conventional light-emitting diode. 2 is a schematic view of a conventional light emitting diode package structure. Li B&F 3 is a schematic diagram of a hair-emitting diode package structure of the preferred embodiment of the present invention. 4 is a light-emitting diode package structure of the preferred embodiment of the present invention. Another preferred embodiment of the present invention is a light-emitting diode package junction [main 7L symbol description] = two: light-emitting diode package structure 22: bumps. LED package structure 40, 40, convex Block 42 15 ] M 2 9 3 is 2^doc/y 44 : reflective layer 100 : light emitting diode 110 : substrate 120 : semiconductor layer 122 : n-type doped semiconductor layer 124 : light emitting layer 126 : p type doped semiconductor layer 130: conductive layer
140 :反射層 150 :電極 200 :承載器 300 :發光二極體 310 :基板 312 :粗糖表面 320 :半導體層 322 :粗链表面 324 :第一型摻雜半導體層 326 :發光層 328 :第二型摻雜半導體層 330 ·•第一電極 340 :第二電極 350 :透光導電層 400 :承載器 410 :承載粗韆表面 16 M^293^2Aioc/y 420 ··第一接點 430 ··第二接點140: reflective layer 150: electrode 200: carrier 300: light emitting diode 310: substrate 312: raw sugar surface 320: semiconductor layer 322: thick chain surface 324: first type doped semiconductor layer 326: light emitting layer 328: second Type doped semiconductor layer 330 ·•First electrode 340 :Second electrode 350 : Light-transmissive conductive layer 400 : Carrier 410 : Carrying rough surface 16 M^293^2Aioc/y 420 ··First contact 430 ·· Second contact