TW201409595A - 用於在處理狀態下計算處理室內之晶圓位置的裝置及方法 - Google Patents
用於在處理狀態下計算處理室內之晶圓位置的裝置及方法 Download PDFInfo
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- 235000012431 wafers Nutrition 0.000 claims description 140
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- 238000010438 heat treatment Methods 0.000 claims description 6
- 230000003213 activating effect Effects 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 125000006850 spacer group Chemical group 0.000 description 13
- 230000007246 mechanism Effects 0.000 description 8
- 230000000712 assembly Effects 0.000 description 6
- 238000000429 assembly Methods 0.000 description 6
- 238000009434 installation Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000012636 effector Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000006378 damage Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- NCGICGYLBXGBGN-UHFFFAOYSA-N 3-morpholin-4-yl-1-oxa-3-azonia-2-azanidacyclopent-3-en-5-imine;hydrochloride Chemical compound Cl.[N-]1OC(=N)C=[N+]1N1CCOCC1 NCGICGYLBXGBGN-UHFFFAOYSA-N 0.000 description 1
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- -1 but not limited to Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000013101 initial test Methods 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Abstract
本發明提供一種用於處理一晶圓的裝置，其包括：一反應室，其具有用於處理該晶圓之一反應空間；一基座，其定位於該反應室內且具有一側壁；至少一個光源，其定位於該反應空間外部；至少一個窗口，其在該反應室中；且其中該至少一個光源經引導穿過該至少一個窗口來與該側壁接觸。
Description
本揭露內容大體而言係關於半導體處理，且更特定而言，係關於用於確定晶圓在處理室內的偏移位置之裝置及方法。
半導體製造製程通常係於受控的狀態下進行，其中基板係支撐在腔室內。為達許多目的，在處理室內加熱半導體基板(例如晶圓)。例如，可藉由與內部加熱的晶圓夾持器或「夾頭」的直接實體接觸來加熱基板。「基座」係在晶圓及基座吸收熱量之系統中所使用之晶圓支撐器。
對處理而言很重要的受控狀態中的一些包括但不限於：流體進入腔室的流動速率，反應室的溫度，流入反應室之流體的溫度，以及在晶圓裝載期間晶圓在基座上的位置。
反應室內的加熱可以多種方式發生，包括定位於基板表面上方的用於直接加熱基座之燈組或燈陣列或定位於基座下方的基座加熱器/台座加熱器。按照傳統，台座式加熱器穿過底部壁延伸進入腔室，且基座安裝於加熱器的頂部表面上。加熱器可包括封閉於加熱器內之電阻加熱元件，藉以提供傳導熱且增加基座的溫度。
通常在顯著高於室溫的溫度下處理晶圓，因此需要顯著的熱
升高及下降窗口。按照傳統，藉由安裝具有用以觀看晶圓位置的開口之獨特反應器蓋來找到晶圓的中心位置。操作員將腔室加熱至低於處理溫度的某一溫度，通常為攝氏200度左右，且執行若干裝載及卸載步驟來確定適當的晶圓裝載點在哪裡。接著，操作員在真空下冷卻腔室，且隨後在回填至大氣壓力之後進一步冷卻。所有此等步驟及程序可花費的時間超過所需時間。
本文揭露關於基板支撐總成設計以及用於計算在反應室內的晶圓位置之各種觀點及實行方案。在一個觀點中，一種用於處理一晶圓之裝置可包括：一反應室，其具有用於處理該晶圓之一反應空間；一基座，其定位於該反應室內且具有一側壁；至少一個光源，其定位於該反應空間外部；至少一個窗口，其在該反應室中；且其中該至少一個光源經引導穿過該至少一個窗口來與該側壁接觸。
在一個實行方案中，該至少一個光源可為一雷射。該至少一個光源可為三個光源。該至少一個窗口可為三個窗口。該至少一個窗口可由石英構成。該至少一個光源可量測該基座側壁之位置。該至少一個光源可安裝在該反應室之一外表面上。
該至少一個光源可能係可沿垂直軸線來調整的。當該基座在第一垂直位置時，該至少一個光源可量測該基座側壁的位置，且當該基座在第二垂直位置時，該至少一個光源可量測一測試晶圓側壁的位置。可將該基座側壁的位置與該測試晶圓側壁的位置相比較來界定一相對偏移。該相對偏移可為一晶圓中心點。晶圓處置器可根據該相對偏移來定位待處理
之晶圓。
該至少一個光源可在處理溫度下操作，以便在該處理溫度下確定該基座側壁的位置。該至少一個光源可為可移除的。該至少一個光源可在安裝於該反應室上之前經校準。該裝置可進一步包括一測試晶圓，其中該測試晶圓可由高不透明度材料構成且可包括一大體上筆直的側壁。該測試晶圓可進一步包括一不透明的頂部表面。
在另一觀點中，一種用於確定晶圓中心點的方法包括以下步驟：為具有一反應空間及一側壁之一反應室提供一窗口；校準至少一個光源；將該至少一個光源安裝至該側壁；將該反應室加熱至一處理溫度；啟動該至少一個光源；以及計算基座之位置。
在一個實行方案中，該方法可包括以下步驟：垂直移動該基座；以及啟動該至少一個光源，以便計算一測試晶圓之位置。該方法可包括根據該測試晶圓之位置及該基座之位置來計算一晶圓中心點之步驟。該方法可進一步包括基於對該測試晶圓位置之該計算使用一晶圓處置器來定位一處理晶圓。該方法可包括移除該至少一個光源之步驟。該至少一個光源可為一雷射。該至少一個光源可為三個光源。
在另一觀點中，一種用於一晶圓處理工具之雷射總成包括：一雷射；一安裝座(mount)，其用於將該雷射固定至一反應室之一外部側壁；且其中該雷射投射至該反應室中以便在該反應室內偵測一基座之位置。
在一個實行方案中，該雷射可能係可自該安裝座移除的。該安裝座可將該雷射定向成投射穿過該反應室中的一窗口。該雷射可能係在垂直方向上可調整的。
提供此【發明內容】來以簡化形式引入在下文之【實施方式】中進一步描述的概念精選。此【發明內容】既不意欲識別所主張之標的物之關鍵特徵或基本特徵，亦不意欲用來限制所主張之標的物之範疇。此外，所主張之標的物不限於解決了本揭露內容之任何部分中所指出之任何缺點或所有缺點之實行方案。
圖1例示具有光源之反應室之橫剖視圖。
圖2例示反應室處之光源附接之分解透視圖。
圖3例示附接有光源之光源對準設備之透視圖。
圖4例示正在定位至反應室上的光源。
圖5例示已定位於反應室上之光源。
圖6例示光源及調整機構之剖視圖。
圖7例示反應室及光源的橫剖視圖，其中晶圓已安裝在基座上方的升降銷上。
圖8例示反應室及光源的橫剖視圖，其中晶圓已移除且基座在升高之位置。
圖9例示在晶圓不存在之情況下，大體上圍繞圖8中之線9-9得到之反應室的俯視剖視圖。
圖10例示連接至反應室之光源之俯視剖視圖。
圖11例示反應室之剖視圖，其具有光源且定位於反應室內之晶圓在偏移位置。
圖12例示大體上圍繞圖11中之線12-12得到之反應室之俯
視剖視圖，其中光源連接至反應室且晶圓在偏移位置。
圖13例示反應室之剖視圖，其中光源已自反應室移除且晶圓在擱置於升降銷上的同時重新定位於基座的中心。
圖14例示大體上圍繞圖13中之線14-14得到之反應室之俯視剖視圖，其中光源已移除且晶圓重新定位於反應室的中心。
圖15係例示隨著雷射在整個晶圓厚度中讀取位置資料之晶圓邊緣變化的圖表。
可用功能塊構件及各種處理步驟來描述本發明之觀點及實行方案。此等功能塊可由經組配來執行指定的功能以及達成各種結果之任何數目個硬體構件或軟體構件來實現。例如，本發明之觀點可採用可執行多種功能之各種感測器、偵測器、流程控制設備、加熱器以及類似設備。另外，本發明之觀點及實行方案可結合任何數目種處理方法來實踐，且所描述之裝置及系統可採用任何數目種處理方法，且所描述之裝置及系統僅僅係本發明之應用的實例。
圖1例示反應室20之橫剖視圖，該反應室具有上部腔室22、下部腔室24以及上部腔室與下部腔室之間的反應空間21。下部腔室24包括底部壁26及自底部壁26向上延伸之複數個側壁28。雖然當前的下部腔室24包括大約七個側壁28，但是可併入任何合適數目個側壁，其中包括單個圓形(或任何其他合適的形狀)的壁。底部壁26與側壁28一起界定晶圓裝載區域30，此區域與側壁28中之一或多者中的晶圓裝載槽32相連通。
基座台座34延伸穿過底部壁26且進入下部腔室24，以便
支撐基座36且提供基座36的垂直移動。基座36定向於台座34的頂部上且支撐待處理之晶圓(圖1中未展示)。基座36及台座34分別包括升降銷孔38及升降銷孔40，而基座36亦可包括用於在處理期間定位晶圓之肩部42及凹部44。升降銷46包括用於在必要時將晶圓提升至基座凹部44上方的升降銷頭48。升降銷46藉由在台座34向下移動時與升降銷止擋件50接觸來操作，藉此在與升降銷止擋件50接觸時限制升降銷46之向下行進。
圖1亦例示反應室20之側壁28中的一對觀察窗52。複數個通孔54形成於側壁28內，且允許可見光及不可見光自反應室外部通過且進入下部腔室24。此外，光源總成56安裝成鄰近觀察窗52及通孔54。雖然圖1中僅展示兩個觀察窗及通孔，但是可利用任何合適數目個觀察窗及通孔，包括但不限於單個觀察窗及通孔、兩個觀察窗及通孔、三個觀察窗及通孔或甚至環繞反應室的圓周延伸之一連續的觀察窗。此外，可併入任何數目個光源總成56，包括但不限於在觀察窗52及通孔54中之每一者處之單個光源總成56，或選擇性地將單個光源總成56自一觀察窗52移動至另一觀察窗。另外，可保持一個備用光源總成56，以便在光源總成56損壞、丟失或出故障的情況下減少停機時間。
圖2例示附接至反應室20，且特定而言附接至側壁28之光源總成56的分解圖。側壁28可包括複數個螺紋孔58，其用於在將安裝隔片62固定至反應室20之側壁28之外表面時收容螺栓60。此外，由任何合適材料構成之用於處理及防熱(如適用)之密封環64或O形環定位於溝槽66內，該溝槽圍繞與觀察窗52及通孔54鄰近之窗台68。窗口70定位成鄰近窗台68且密封環64在一側上，而安裝隔片62與窗口70的另一側接觸。
窗口70可由任何合適的材料構成，包括石英或其他在處理狀態下安全但是仍容許光源穿過的材料。在一個觀點中，當窗口不再能夠穿過其傳輸適當的光時，在每一次腔室清洗時，在固定的時間或固定數目個晶圓的間隔或任何其他合適的度量之後，可替換窗口70。
安裝隔片62亦包括複數個孔洞72，該等孔洞經佈置來將螺栓60收容於其中以便在螺紋孔58處將該隔片安裝至側壁28。安裝隔片62亦可包括與窗口70及通孔54對準之中心孔74，以便容許光源照進及照出反應室20。安裝隔片62的頂部表面76可為平坦的，以便協助解決上部腔室22與下部腔室24之間的任何潛在的間隙問題，而安裝螺栓78及具有肩部81的凸肩螺栓79固定在安裝隔片62中，以便在對準過程期間將光源總成56定位且固定在反應室上。
對準隔片80可固定至光源總成56，其中螺栓82延伸穿過安裝孔84且旋入光源總成56的頂部塊86中。對準隔片80亦可在其中包括一對開口槽88及開口90。開口槽88選擇性地定位於安裝螺栓78及凸肩螺栓79附近，以便將光源總成56對準於且固定至安裝隔片62及反應室20，同時仍允許經由開口槽88進行調整來確保光源總成56正確安裝。開口90可為任何合適的大小或形狀，只要其與光源總成56對準且容許任何適用的光穿過對準隔片80即可。每個光源總成56亦可包括在操作期間感測凸肩螺栓79之感應感測器87。有利地，感應感測器87確保凸肩螺栓79在適當的位置且光源總成56以安全的方式安裝至反應室或安裝於校準區中，以便防止對區域中人員的傷害。
光源總成56亦包括中間塊92、下部塊94、具有彈簧98的
安裝螺栓96、調整機構100以及電源線102。以下將更詳細地描述光源總成56之操作、調整以及控制。
現在參看圖3，展示光源總成56與對準隔片80附接，且兩者均固定至校準總成104。校準總成104包括底座106及光源安裝壁108，該光源安裝壁具有類似於安裝螺栓78及凸肩螺栓79之安裝螺栓109以便容許容易安裝及移除。主安裝塊110及次安裝塊112用來可移除地固定複數個校準塊114及116，以便確保光源總成56正確地量測距離。次安裝塊112包括一對孔118，其用於收容具有彈簧122之螺栓120，而另一個孔124收容把手126，該把手用以朝著光源總成56拉動次安裝塊112以便在校準過程期間插入及移除各個校準塊114及116。在另一個觀點中，複數個保護壁可圍繞校準區且可樞轉或可旋轉的蓋可打開以便容許進入校準區，且可利用近接感測器來確定該蓋在閉合位置。此等額外的壁及構件可用以確保以安全的方式使用光源總成56。
校準塊114及116各自具有不同的厚度，其中校準塊114具有厚度T1，而校準塊116具有厚度T2。校準塊114及116各自擱置於塊110與塊112之間的槽113內，或若省略了槽113則可壓縮性地定位於該等塊之間。校準塊的厚度對於確定光源總成是否準確地發射光132以及是否正確地反射光134而言很重要。光源總成56藉由發射光132且讀取反射光134的角度來操作，以便確定光已經行進的距離以及因此確定離反射該光之物件(在此實例中為校準塊114及116)的距離。為確保適當的順應性，T1與T2必須不同以便確定光源總成正確地運行。操作員將藉由在與箭頭136相關聯之方向上逆著彈簧122的壓力拉動把手126來裝載校準塊114、116中之
一個。操作員隨後在主塊110與次塊112之間將校準塊插入槽113內，並且鬆開把手126，以使得校準塊與發射光132對準。給光源總成通電且記錄值。隨後用第二校準塊替換第一校準塊，後續接著相同的程序且記錄離第二校準塊的距離。因為操作員知道T1與T2之間的差別，所以操作員能夠確定光源總成56是否正確地量測距離，是否需要調整或校準，或是否需要完全替換掉。有利地，安裝及拆卸簡單的校準總成104的使用允許操作員在開始反應室處之對準過程之前確保光源總成56係可操作的，從而節省寶貴的時間。
圖4及圖5例示光源總成56至反應室20之安裝。具體而言，光源總成56在與箭頭138相關聯之方向上大體上垂直移動，直至開口槽88定位於安裝隔片62之安裝螺栓78及凸肩螺栓79上。因為開口槽88通常係細長的，所以其允許在與箭頭138相關聯之方向上之垂直移動。有利地，此允許光源總成56垂直上下移動，以便將光源總成56與窗口70更好地對準且提供反應室20內之更準確的讀數。一旦正確地對準光源總成56，就在一側上將安裝螺栓78用作輕微的摩擦配合，而將凸肩螺栓79擰緊以便將光源總成固定至反應室並且防止光源總成56之額外的垂直移動。圖5例示在光源總成經調整且凸肩螺栓79被擰緊之後固定至反應室20之光源總成56。
現在參看圖6，用剖面展示光源總成56之各種內部構件。展示中間塊92固定至下部塊94，且展示下部塊94容納光源140，該光源由發射雷射及接收器組成，以便使用三角測量法來確定離反應室中之物件的距離。頂部塊86包括用於收容調整機構100之通孔142，該調整機構在安裝座144處安裝至頂部塊86。伸縮式軸桿146隨著調整機構100在第一方
向上旋轉而向下移動，從而拉伸彈簧98，且隨著調整機構在相反方向上旋轉而向上移動，從而壓縮彈簧98。在此佈置中，彈簧98之恆定偏壓在兩個方向上提供連續的壓力及平滑的垂直移動。在一個實行方案中，伸縮式軸桿146僅僅在滾珠軸承固定螺釘147處將中間塊92及下部塊94向下推，且當伸縮式軸桿146縮回時，來自彈簧98之彈簧壓力促使中間塊及下部塊向上返回。具體而言，安裝螺栓96在旋入中間塊92之前延伸穿過反向鑽孔97且穿過孔99。然而，可併入任何合適的佈置，包括但不限於將中間塊與下部塊合併，將下部塊完全移除，或將光源140直接安裝至頂部塊86。此外，可併入上/下調整或左右調整光源總成56之任何合適的方法或手段，只要在量測開始之前固定光源總成56即可。
光源140可為雷射，諸如具有發射雷射及接收雷射之第2類雷射，其具有基於接收雷射窗口大小之給定的感測範圍。例如，發射雷射與待感測之物件接觸且反射回至接收雷射窗口，在該接收雷射窗口中量測返回角來計算離相關物件之距離。如以下將論述，針對各種物件重複該過程來確定物件之周邊的偏移位置，以便計算晶圓放下偏移。雖然本揭露內容係關於用於確定離特定物件之距離的雷射，但是可併入任何合適的設備，無論是否使用光源。此外，所使用之任何光源可在任何適用光譜中操作，該光譜包括但不限於可見光譜及不可見光譜。
圖7例示晶圓148在與箭頭150相關聯之方向上定位於反應室20內。晶圓148可包括鋒利的邊緣或由派瑞克斯(Pyrex)晶圓構成，該派瑞克斯晶圓包括平坦的周邊以便在量測期間正確地反射光源。平坦的周邊意謂晶圓邊緣或晶圓側壁153之頂部至底部係大體上筆直的且自頂部至
底部不彎曲，但是可利用任何合適的大小或形狀。此外，晶圓148可由任何合適的反光材料構成，該反光材料包括但不限於由PVD濺鍍製程產生的鈦塗層151。不透明的塗層151可用於確保晶圓存在感測器由於測試晶圓之不同材料而偵測測試晶圓。然而，晶圓側壁153可具有或可不具有不透明塗層151且仍用來將發射的光反射回至光源總成。在將晶圓最初定位於反應室20內時，可藉由機械手正確地或不正確地定位晶圓148，且將其直接放下在升降銷46上或直接放下至基座36上，在此之後將基座36降低，直至升降銷46升高以便將晶圓提升至適當的高度。已經展示將安裝晶圓定位於升降銷46上以便最初定位光源總成56係有所幫助的，因為偵測晶圓的邊緣而不會意外地偵測基座有時可能很難。一旦測試晶圓146擱置在升降銷上，就藉由操作調整機構100來調整光源總成56，直至測試晶圓146的中心位置與發射光132對準。簡單參看圖15，可以看出將雷射定位於測試晶圓148的中間更符合需要，此係由於在晶圓的頂部邊緣及底部邊緣(在圖15中將其識別為數字152及154)處的反射性損耗很大。相反，藉由將發射光的光源總成56定位成在晶圓148之中間範圍156中進行讀取，獲得最好的結果。在已操作調整機構100來定位晶圓148之中間範圍156內之大概位置之後，光源總成56之垂直精密調整完成且偏移量測過程可以開始。
圖8例示在垂直定位光源總成56及精密調整調整機構100之後，在所揭露方法中之接下來兩個步驟。具體而言，使用機械手或其他適用的設備在與箭頭158相關聯之方向上經由晶圓裝載槽32自反應室移除測試晶圓148。在移除測試晶圓148後，在與箭頭160相關聯之方向上垂直向上移動基座，直至基座之側壁162與發射光132對準且交叉，在此時停止
基座的垂直移動。在此時，以及甚至在以上論述之針對光源總成56之最初的測試晶圓對準期間，反應室較佳在處理溫度及處理壓力下。處理狀態可發生很大變化，但是可高達攝氏600度或甚至攝氏800度。
圖9及圖10例示圖8之俯視剖視圖及定位於量測位置之基座36，在此量測位置中，基座36之側壁162與發射光132相交且將光作為反射光134反射回光源總成56。如可以更詳細地看出，在一個實行方案中，發射器光源164定位成與接收光源166鄰近且並排，但是在不背離本揭露內容之精神及範疇之情況下可利用任何合適的佈置。
如圖9中亦可以看出，環繞反應室20之周邊可併入任何合適數目個光源總成56。在一個實行方案中，將三個光源總成定位於各個位置以便提供在圖9中所示之位置中之每一者處離基座36之側壁162的距離。因此，可將光源校準或瞄準以便界定相對於基座之相對中心位置。從而，在量測離測試晶圓之距離之前，光源總成56中之每一者已瞄準在基座36之側壁162上。如圖10中可以更詳細地看出，發射器光源164定位成鄰近通孔54之一側，而接收光源166定位成鄰近通孔54之相反側，以便在接收光源166中允許足夠的空間用於待接收之反射光134。在另一個實行方案中，發射光132可與基座中心線一致地對準或自中心線發生特定的偏移，此情況可為操作員所知且在偏移計算內考慮到。藉由對準發射光132之偏移，操作員可能能夠使用不同的或甚至更精確的光源總成。
圖11例示接下來的步驟，其在與箭頭168相關聯之方向上降低基座36以便在與箭頭150相關聯之方向上裝載測試晶圓148。同樣，可將晶圓直接裝載至升降銷或基座36上。此刻，基於圖7中所示之光源總
成56之先前移動，測試晶圓148應與發射光132相交。此外，測試晶圓148之裝載程序應與在晶圓裝載步驟處所提出的晶圓處理狀態類似(即使不完全相同)。具體而言，密切監測反應室的溫度及壓力以便獲得針對晶圓放下之處理類狀態。因此，圖n模擬在依處理而定的溫度及壓力下具有任何適用的偏離中心位置的晶圓放下。
圖12例示測試晶圓148在由升降銷46上之末端作用器(未圖示)放下之後的定位。在此情況下，測試晶圓148已經定位成自基座36之中心170偏移，以使得測試晶圓148之中心172以未知角度離基座中心170有未知距離。光源總成56各自提供發射光132且沿測試晶圓148之三個不同的點接收相應各自的反射光134。使用此等三個點，根據基座36之側壁162之瞄準點，操作員可確定測試晶圓148之三個特定位置在相同平面中離基座側壁162有多遠。確定在若干點處之偏移距離且知道相應的側壁位置後，可利用以下公式來確定自基座36之中心170至測試晶圓148之中心172之距離及角度偏移。
針對完全居中之晶圓，d1=d2=d3
θ 1=Sin-1(雷射偏移/R基座)
雷射偏移=雷射自基座中心線的偏移
θ 10=(360°-θ 1)
θ 20=(360°-θ 1-(腔室上之第二雷射位置)°)
θ 30=(360°-θ 1-(腔室上之第三雷射位置)°)
其中X及Y係位置，d係離測試晶圓之所量測距離，以及θn0係在光源總成56處之三個量測位置中之每一者的角度值。在使用以上公式之後，操作員可確定將測試晶圓148正確地定位於基座中間所需之偏移位置及角度偏移，以便在處理溫度及處理狀態下獲得更一致且更有利的處理結果。
圖13及圖14例示額外的可選擇步驟，該等步驟可用來檢驗機械手或末端作用器之放下位置，但並非進行該檢驗所需的。具體而言，測試晶圓148已自腔室移除且置放在轉移室或其他合適的夾具中。機械手或末端作用器在拾取期間(藉由拾取偏離中心的晶圓)或在放下期間(其中末端作用器將測試晶圓148定位於升降銷或基座上之新的、習得的中心位置)應用適當的偏移計算。可再次使用光源總成56來量測離測試晶圓148之距離，因此光源總成應讀取相同的距離。若由於某種原因光源總成56不顯示合理類似的值，則可重複計算過程來提供另一新的偏移中心位置及角度偏移，用於重新界定偏移放下或拾取參數。
圖13例示光源總成56已自反應室20移除。有利地，因為不需要打開腔室且光源總成定位於腔室外部，所以可容易地將該等光源總
成移除且移動至另一腔室以便在處理狀態下安裝。如可以在圖13及圖14中進一步看出，用於光源總成56之安裝硬體在操作期間可保留在反應室20上且避免了腔室之加熱及冷卻所需的大量時間，而因為量測及測試係在處理狀態下完成，所以仍提供額外的定位精度。圖14繼續例示一晶圓，該晶圓係在基座36居中的測試晶圓148或生產晶圓，藉此允許在與晶圓放下定位期間所使用的狀態類似的狀態下之處理之更大的一致性。因此，光源總成56容易在反應室與工具之間轉移且極大地減少晶圓放下位置學習時間，因為在安裝期間可將腔室維持在處理溫度及處理狀態下。
雖然本揭露內容大體而言係針對在晶圓放下期間將晶圓正確地定位於腔室中，但是所揭露的裝置及方法可用以在室溫及各種處理溫度下確定基座位置。此外，該等概念可用以在由基座拾取晶圓之後藉由以下操作來確定晶圓在基座中之移動：降低基座來將晶圓定位於升降銷上，以及確定晶圓位置是否存在由基座導致之變化。該等概念可在晶圓裝載期間用在每一個晶圓上，以便確定晶圓是否在合理可接受的偏移公差內且當晶圓在給定的處理偏移之外時阻止處理。
用於反應室之方法及裝置之此等及其他實施例可併入如關於用於量測上述設備之裝置的實施例所描述的概念、實施例以及組配，該裝置具有光源總成以用於確定其中的反應室中之物件之相對位置。所展示及描述之特定實行方案例示本發明及其最佳方式，且不意欲以任何方式限制該等觀點及實行方案之範疇。實際上，為簡潔起見，可能未詳細描述系統之習知的製造、連接、準備以及其他功能觀點。此外，各個圖式中所示之任何連接線意欲表示各個元件之間的示範性功能關係及/或實體耦合。許
多替代性或額外的功能關係或實體連接可出現在實際系統中，及/或不出現在某些實施例中。
如本文所使用，術語「包含」或其任何變體意欲指非排他性包含，以使得包含一系列元件之製程、方法、物件、組合物或裝置不僅包含所述元件，而且亦可包含其他未明確列出的或此製程、方法、物件、組合物或裝置所固有的其他元件。本發明之實踐中所使用之上述結構、佈置、應用、比例、元件、材料或構件之其他組合及/或修改(除了未明確敘述的之外)可在不背離本發明之一般原理之情況下發生變化或以其他方式特別適合於特定的環境、製造規格、設計參數或其他操作要求。
Claims (28)
- 一種用於處理晶圓的裝置，其包含：一反應室，其具有用於處理該晶圓之一反應空間；一基座，其定位於該反應室內且具有一側壁；至少一個光源，其定位於該反應空間外部；至少一個窗口，其在該反應室中；以及其中該至少一個光源經引導穿過該至少一個窗口來與該側壁接觸。
- 如申請專利範圍第1項之用於處理一晶圓之裝置，其中該至少一個光源係一雷射。
- 如申請專利範圍第1或2項之用於處理一晶圓之裝置，其中該至少一個光源係三個光源。
- 如申請專利範圍第3項之用於處理一晶圓之裝置，其中該至少一個窗口係三個窗口。
- 如申請專利範圍第1或2項之用於處理一晶圓之裝置，其中該至少一個窗口係由石英構成。
- 如申請專利範圍第1或2項之用於處理一晶圓之裝置，其中該至少一個光源量測該基座側壁之一位置。
- 如申請專利範圍第1或2項之用於處理一晶圓之裝置，其中該至少一個光源安裝在該反應室之一外表面上。
- 如申請專利範圍第7項之用於處理一晶圓之裝置，其中該至少一個光源係可沿一垂直軸線來調整的。
- 如申請專利範圍第8項之用於處理一晶圓之裝置，其中當該基座在一 第一垂直位置時，該至少一個光源量測該基座側壁之一位置，且當該基座在一第二垂直位置時，該至少一個光源量測一測試晶圓側壁之一位置。
- 如申請專利範圍第9項之用於處理一晶圓之裝置，其中將該基座側壁之該位置與該測試晶圓側壁之該位置相比較來界定一相對偏移。
- 如申請專利範圍第10項之用於處理一晶圓之裝置，其中該相對偏移係一晶圓中心點。
- 如申請專利範圍第11項之用於處理一晶圓之裝置，其中一晶圓處置器根據該相對偏移來定位待處理之一晶圓。
- 如申請專利範圍第1或2項之用於處理一晶圓之裝置，其中該至少一個光源在一處理溫度下操作，以便在該處理溫度下確定該基座側壁之一位置。
- 如申請專利範圍第1或2項之用於處理一晶圓之裝置，其中該至少一個光源係可移除的。
- 如申請專利範圍第1或2項之用於處理一晶圓之裝置，其中該至少一個光源在安裝於該反應室上之前經校準。
- 如申請專利範圍第1或2項之用於處理一晶圓之裝置，其進一步包含一測試晶圓，其中該測試晶圓係由高不透明度材料構成且包含一大體上筆直的側壁。
- 如申請專利範圍第16項之用於處理一晶圓之裝置，其中該測試晶圓進一步包含一不透明的頂部表面。
- 一種確定一晶圓中心點的方法，其包含以下步驟：為具有一反應空間及一側壁之一反應室提供一窗口； 校準至少一個光源；將該至少一個光源安裝至該側壁；將該反應室加熱至一處理溫度；啟動該至少一個光源；以及，計算該基座之一位置。
- 如申請專利範圍第18項之方法，其進一步包含以下步驟：垂直移動該基座；以及，啟動該至少一個光源來計算一測試晶圓之一位置。
- 如申請專利範圍第19項之方法，其進一步包含根據該測試晶圓之該位置及該基座之該位置來計算一晶圓中心點之步驟。
- 如申請專利範圍第19或20項之方法，其進一步包含基於對該測試晶圓位置之該計算使用一晶圓處置器來定位一處理晶圓之步驟。
- 如申請專利範圍第18、19或20項之方法，其進一步包含移除該至少一個光源之步驟。
- 如申請專利範圍第18、19或20項之方法，其中該至少一個光源係一雷射。
- 如申請專利範圍第18、19或20項之方法，其中該至少一個光源係三個光源。
- 一種用於一晶圓處理工具之雷射總成，其包含：一雷射；一安裝座，其用於將該雷射固定至一反應室之一外部側壁；以及，其中該雷射投射至該反應室中以便在該反應室內偵測一基座之一位 置。
- 如申請專利範圍第25項之雷射總成，其中該雷射係可自該安裝座移除的。
- 如申請專利範圍第25或26項之雷射總成，其中該安裝座將該雷射定向成投射穿過該反應室中的一窗口。
- 如申請專利範圍第25或26項之雷射總成，其中該雷射係可在一垂直方向上調整的。
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/563,066 US9117866B2 (en) | 2012-07-31 | 2012-07-31 | Apparatus and method for calculating a wafer position in a processing chamber under process conditions |
| US13/563,066 | 2012-07-31 |
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| Publication Number | Publication Date |
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| TWI646611B TWI646611B (zh) | 2019-01-01 |
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| TW106138800A TWI677044B (zh) | 2012-07-31 | 2013-07-22 | 用於在處理狀態下計算處理室內之晶圓位置的裝置及方法 |
| TW102126071A TWI646611B (zh) | 2012-07-31 | 2013-07-22 | 用於在處理狀態下計算處理室內之晶圓位置的裝置及方法 |
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| Country | Link |
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Families Citing this family (378)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8986456B2 (en) * | 2006-10-10 | 2015-03-24 | Asm America, Inc. | Precursor delivery system |
| US10378106B2 (en) | 2008-11-14 | 2019-08-13 | Asm Ip Holding B.V. | Method of forming insulation film by modified PEALD |
| US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
| US8883270B2 (en) * | 2009-08-14 | 2014-11-11 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen—oxygen species |
| US8877655B2 (en) | 2010-05-07 | 2014-11-04 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
| US8802201B2 (en) | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
| US9312155B2 (en) | 2011-06-06 | 2016-04-12 | Asm Japan K.K. | High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules |
| US9793148B2 (en) | 2011-06-22 | 2017-10-17 | Asm Japan K.K. | Method for positioning wafers in multiple wafer transport |
| US10364496B2 (en) | 2011-06-27 | 2019-07-30 | Asm Ip Holding B.V. | Dual section module having shared and unshared mass flow controllers |
| US10854498B2 (en) | 2011-07-15 | 2020-12-01 | Asm Ip Holding B.V. | Wafer-supporting device and method for producing same |
| US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
| US9096931B2 (en) | 2011-10-27 | 2015-08-04 | Asm America, Inc | Deposition valve assembly and method of heating the same |
| US9341296B2 (en) | 2011-10-27 | 2016-05-17 | Asm America, Inc. | Heater jacket for a fluid line |
| US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
| US9167625B2 (en) | 2011-11-23 | 2015-10-20 | Asm Ip Holding B.V. | Radiation shielding for a substrate holder |
| US9005539B2 (en) | 2011-11-23 | 2015-04-14 | Asm Ip Holding B.V. | Chamber sealing member |
| US9202727B2 (en) | 2012-03-02 | 2015-12-01 | ASM IP Holding | Susceptor heater shim |
| US8946830B2 (en) | 2012-04-04 | 2015-02-03 | Asm Ip Holdings B.V. | Metal oxide protective layer for a semiconductor device |
| US9029253B2 (en) | 2012-05-02 | 2015-05-12 | Asm Ip Holding B.V. | Phase-stabilized thin films, structures and devices including the thin films, and methods of forming same |
| US8728832B2 (en) | 2012-05-07 | 2014-05-20 | Asm Ip Holdings B.V. | Semiconductor device dielectric interface layer |
| US8933375B2 (en) | 2012-06-27 | 2015-01-13 | Asm Ip Holding B.V. | Susceptor heater and method of heating a substrate |
| US9558931B2 (en) | 2012-07-27 | 2017-01-31 | Asm Ip Holding B.V. | System and method for gas-phase sulfur passivation of a semiconductor surface |
| US9117866B2 (en) | 2012-07-31 | 2015-08-25 | Asm Ip Holding B.V. | Apparatus and method for calculating a wafer position in a processing chamber under process conditions |
| US9169975B2 (en) | 2012-08-28 | 2015-10-27 | Asm Ip Holding B.V. | Systems and methods for mass flow controller verification |
| US9659799B2 (en) | 2012-08-28 | 2017-05-23 | Asm Ip Holding B.V. | Systems and methods for dynamic semiconductor process scheduling |
| US9021985B2 (en) | 2012-09-12 | 2015-05-05 | Asm Ip Holdings B.V. | Process gas management for an inductively-coupled plasma deposition reactor |
| US9324811B2 (en) | 2012-09-26 | 2016-04-26 | Asm Ip Holding B.V. | Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same |
| US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
| US9640416B2 (en) | 2012-12-26 | 2017-05-02 | Asm Ip Holding B.V. | Single-and dual-chamber module-attachable wafer-handling chamber |
| US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
| US8894870B2 (en) | 2013-02-01 | 2014-11-25 | Asm Ip Holding B.V. | Multi-step method and apparatus for etching compounds containing a metal |
| JP6084479B2 (ja) * | 2013-02-18 | 2017-02-22 | 株式会社Ｓｃｒｅｅｎホールディングス | 熱処理方法、熱処理装置およびサセプター |
| US9484191B2 (en) | 2013-03-08 | 2016-11-01 | Asm Ip Holding B.V. | Pulsed remote plasma method and system |
| US9589770B2 (en) | 2013-03-08 | 2017-03-07 | Asm Ip Holding B.V. | Method and systems for in-situ formation of intermediate reactive species |
| US8993054B2 (en) | 2013-07-12 | 2015-03-31 | Asm Ip Holding B.V. | Method and system to reduce outgassing in a reaction chamber |
| US9018111B2 (en) | 2013-07-22 | 2015-04-28 | Asm Ip Holding B.V. | Semiconductor reaction chamber with plasma capabilities |
| US9396934B2 (en) | 2013-08-14 | 2016-07-19 | Asm Ip Holding B.V. | Methods of forming films including germanium tin and structures and devices including the films |
| US9793115B2 (en) | 2013-08-14 | 2017-10-17 | Asm Ip Holding B.V. | Structures and devices including germanium-tin films and methods of forming same |
| US9240412B2 (en) | 2013-09-27 | 2016-01-19 | Asm Ip Holding B.V. | Semiconductor structure and device and methods of forming same using selective epitaxial process |
| US9556516B2 (en) | 2013-10-09 | 2017-01-31 | ASM IP Holding B.V | Method for forming Ti-containing film by PEALD using TDMAT or TDEAT |
| US9605343B2 (en) | 2013-11-13 | 2017-03-28 | Asm Ip Holding B.V. | Method for forming conformal carbon films, structures conformal carbon film, and system of forming same |
| US10179947B2 (en) | 2013-11-26 | 2019-01-15 | Asm Ip Holding B.V. | Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition |
| US10683571B2 (en) | 2014-02-25 | 2020-06-16 | Asm Ip Holding B.V. | Gas supply manifold and method of supplying gases to chamber using same |
| US9447498B2 (en) | 2014-03-18 | 2016-09-20 | Asm Ip Holding B.V. | Method for performing uniform processing in gas system-sharing multiple reaction chambers |
| US10167557B2 (en) | 2014-03-18 | 2019-01-01 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
| US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
| US9404587B2 (en) | 2014-04-24 | 2016-08-02 | ASM IP Holding B.V | Lockout tagout for semiconductor vacuum valve |
| US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
| US9543180B2 (en) | 2014-08-01 | 2017-01-10 | Asm Ip Holding B.V. | Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum |
| US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
| US9657845B2 (en) | 2014-10-07 | 2017-05-23 | Asm Ip Holding B.V. | Variable conductance gas distribution apparatus and method |
| US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
| US9768825B2 (en) * | 2014-11-03 | 2017-09-19 | Apple Inc. | Wi-Fi adaptive transmit antenna selection |
| KR102300403B1 (ko) | 2014-11-19 | 2021-09-09 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
| KR102263121B1 (ko) | 2014-12-22 | 2021-06-09 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 및 그 제조 방법 |
| US9478415B2 (en) | 2015-02-13 | 2016-10-25 | Asm Ip Holding B.V. | Method for forming film having low resistance and shallow junction depth |
| US10529542B2 (en) | 2015-03-11 | 2020-01-07 | Asm Ip Holdings B.V. | Cross-flow reactor and method |
| US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
| US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
| US10600673B2 (en) | 2015-07-07 | 2020-03-24 | Asm Ip Holding B.V. | Magnetic susceptor to baseplate seal |
| US10043661B2 (en) | 2015-07-13 | 2018-08-07 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
| US9899291B2 (en) | 2015-07-13 | 2018-02-20 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
| US10083836B2 (en) | 2015-07-24 | 2018-09-25 | Asm Ip Holding B.V. | Formation of boron-doped titanium metal films with high work function |
| US10087525B2 (en) | 2015-08-04 | 2018-10-02 | Asm Ip Holding B.V. | Variable gap hard stop design |
| US9647114B2 (en) | 2015-08-14 | 2017-05-09 | Asm Ip Holding B.V. | Methods of forming highly p-type doped germanium tin films and structures and devices including the films |
| US9711345B2 (en) | 2015-08-25 | 2017-07-18 | Asm Ip Holding B.V. | Method for forming aluminum nitride-based film by PEALD |
| US9960072B2 (en) | 2015-09-29 | 2018-05-01 | Asm Ip Holding B.V. | Variable adjustment for precise matching of multiple chamber cavity housings |
| US9909214B2 (en) | 2015-10-15 | 2018-03-06 | Asm Ip Holding B.V. | Method for depositing dielectric film in trenches by PEALD |
| US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
| US10322384B2 (en) | 2015-11-09 | 2019-06-18 | Asm Ip Holding B.V. | Counter flow mixer for process chamber |
| US9455138B1 (en) | 2015-11-10 | 2016-09-27 | Asm Ip Holding B.V. | Method for forming dielectric film in trenches by PEALD using H-containing gas |
| US9905420B2 (en) | 2015-12-01 | 2018-02-27 | Asm Ip Holding B.V. | Methods of forming silicon germanium tin films and structures and devices including the films |
| US9607837B1 (en) | 2015-12-21 | 2017-03-28 | Asm Ip Holding B.V. | Method for forming silicon oxide cap layer for solid state diffusion process |
| US9735024B2 (en) | 2015-12-28 | 2017-08-15 | Asm Ip Holding B.V. | Method of atomic layer etching using functional group-containing fluorocarbon |
| US9627221B1 (en) | 2015-12-28 | 2017-04-18 | Asm Ip Holding B.V. | Continuous process incorporating atomic layer etching |
| US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
| US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
| US9754779B1 (en) | 2016-02-19 | 2017-09-05 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
| US10468251B2 (en) | 2016-02-19 | 2019-11-05 | Asm Ip Holding B.V. | Method for forming spacers using silicon nitride film for spacer-defined multiple patterning |
| US10501866B2 (en) | 2016-03-09 | 2019-12-10 | Asm Ip Holding B.V. | Gas distribution apparatus for improved film uniformity in an epitaxial system |
| US10343920B2 (en) | 2016-03-18 | 2019-07-09 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
| US9892913B2 (en) | 2016-03-24 | 2018-02-13 | Asm Ip Holding B.V. | Radial and thickness control via biased multi-port injection settings |
| US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
| US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
| US10087522B2 (en) | 2016-04-21 | 2018-10-02 | Asm Ip Holding B.V. | Deposition of metal borides |
| US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
| US10032628B2 (en) | 2016-05-02 | 2018-07-24 | Asm Ip Holding B.V. | Source/drain performance through conformal solid state doping |
| KR102592471B1 (ko) | 2016-05-17 | 2023-10-20 | 에이에스엠 아이피 홀딩 비.브이. | 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법 |
| US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
| JP6617649B2 (ja) * | 2016-06-20 | 2019-12-11 | 東京エレクトロン株式会社 | 被処理基板の載置位置の設定方法及び成膜システム |
| US10388509B2 (en) | 2016-06-28 | 2019-08-20 | Asm Ip Holding B.V. | Formation of epitaxial layers via dislocation filtering |
| US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
| US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
| US9793135B1 (en) | 2016-07-14 | 2017-10-17 | ASM IP Holding B.V | Method of cyclic dry etching using etchant film |
| US10714385B2 (en) | 2016-07-19 | 2020-07-14 | Asm Ip Holding B.V. | Selective deposition of tungsten |
| KR102354490B1 (ko) | 2016-07-27 | 2022-01-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
| US10177025B2 (en) | 2016-07-28 | 2019-01-08 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
| US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
| US10395919B2 (en) | 2016-07-28 | 2019-08-27 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
| US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
| KR102532607B1 (ko) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 가공 장치 및 그 동작 방법 |
| US10090316B2 (en) | 2016-09-01 | 2018-10-02 | Asm Ip Holding B.V. | 3D stacked multilayer semiconductor memory using doped select transistor channel |
| US10410943B2 (en) | 2016-10-13 | 2019-09-10 | Asm Ip Holding B.V. | Method for passivating a surface of a semiconductor and related systems |
| US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
| US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
| US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
| US10435790B2 (en) | 2016-11-01 | 2019-10-08 | Asm Ip Holding B.V. | Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap |
| US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
| US10643904B2 (en) | 2016-11-01 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for forming a semiconductor device and related semiconductor device structures |
| US10134757B2 (en) | 2016-11-07 | 2018-11-20 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
| KR102546317B1 (ko) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
| US10340135B2 (en) | 2016-11-28 | 2019-07-02 | Asm Ip Holding B.V. | Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride |
| KR20180068582A (ko) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
| US9916980B1 (en) | 2016-12-15 | 2018-03-13 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
| US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
| KR102700194B1 (ko) | 2016-12-19 | 2024-08-28 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
| US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
| US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
| US10655221B2 (en) | 2017-02-09 | 2020-05-19 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ALD and PEALD |
| US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
| US10283353B2 (en) | 2017-03-29 | 2019-05-07 | Asm Ip Holding B.V. | Method of reforming insulating film deposited on substrate with recess pattern |
| US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
| US10103040B1 (en) | 2017-03-31 | 2018-10-16 | Asm Ip Holding B.V. | Apparatus and method for manufacturing a semiconductor device |
| USD830981S1 (en) | 2017-04-07 | 2018-10-16 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate processing apparatus |
| KR102457289B1 (ko) | 2017-04-25 | 2022-10-21 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
| US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
| US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
| US10446393B2 (en) | 2017-05-08 | 2019-10-15 | Asm Ip Holding B.V. | Methods for forming silicon-containing epitaxial layers and related semiconductor device structures |
| US10504742B2 (en) | 2017-05-31 | 2019-12-10 | Asm Ip Holding B.V. | Method of atomic layer etching using hydrogen plasma |
| US10886123B2 (en) | 2017-06-02 | 2021-01-05 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
| US12040200B2 (en) | 2017-06-20 | 2024-07-16 | Asm Ip Holding B.V. | Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus |
| US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
| US10685834B2 (en) | 2017-07-05 | 2020-06-16 | Asm Ip Holdings B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
| KR20190009245A (ko) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물 |
| US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
| US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
| US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
| CN107610997A (zh) * | 2017-07-20 | 2018-01-19 | 江苏鲁汶仪器有限公司 | 一种具有晶圆位置检测装置的气相腐蚀腔体 |
| US10312055B2 (en) | 2017-07-26 | 2019-06-04 | Asm Ip Holding B.V. | Method of depositing film by PEALD using negative bias |
| US10605530B2 (en) | 2017-07-26 | 2020-03-31 | Asm Ip Holding B.V. | Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace |
| US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
| US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
| US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
| US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
| US10249524B2 (en) | 2017-08-09 | 2019-04-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
| US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
| US10236177B1 (en) | 2017-08-22 | 2019-03-19 | ASM IP Holding B.V.. | Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures |
| USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
| US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
| US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
| US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
| KR102491945B1 (ko) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| KR102401446B1 (ko) | 2017-08-31 | 2022-05-24 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| US10607895B2 (en) | 2017-09-18 | 2020-03-31 | Asm Ip Holdings B.V. | Method for forming a semiconductor device structure comprising a gate fill metal |
| KR102630301B1 (ko) | 2017-09-21 | 2024-01-29 | 에이에스엠 아이피 홀딩 비.브이. | 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치 |
| US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
| US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
| US11670490B2 (en) * | 2017-09-29 | 2023-06-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated circuit fabrication system with adjustable gas injector |
| US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
| US10319588B2 (en) | 2017-10-10 | 2019-06-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
| US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
| KR102443047B1 (ko) | 2017-11-16 | 2022-09-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 방법 및 그에 의해 제조된 장치 |
| US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
| US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
| JP7214724B2 (ja) | 2017-11-27 | 2023-01-30 | エーエスエム アイピー ホールディング ビー．ブイ． | バッチ炉で利用されるウェハカセットを収納するための収納装置 |
| JP7206265B2 (ja) | 2017-11-27 | 2023-01-17 | エーエスエム アイピー ホールディング ビー．ブイ． | クリーン・ミニエンバイロメントを備える装置 |
| US10290508B1 (en) | 2017-12-05 | 2019-05-14 | Asm Ip Holding B.V. | Method for forming vertical spacers for spacer-defined patterning |
| US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
| TWI799494B (zh) | 2018-01-19 | 2023-04-21 | 荷蘭商Ａｓｍ 智慧財產控股公司 | 沈積方法 |
| KR102695659B1 (ko) | 2018-01-19 | 2024-08-14 | 에이에스엠 아이피 홀딩 비.브이. | 플라즈마 보조 증착에 의해 갭 충진 층을 증착하는 방법 |
| USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
| US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
| USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
| US10535516B2 (en) | 2018-02-01 | 2020-01-14 | Asm Ip Holdings B.V. | Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures |
| US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
| EP3737779A1 (en) | 2018-02-14 | 2020-11-18 | ASM IP Holding B.V. | A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
| US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
| US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
| US10658181B2 (en) | 2018-02-20 | 2020-05-19 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
| KR102636427B1 (ko) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 장치 |
| US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
| US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
| US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
| US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
| KR102646467B1 (ko) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
| US10510536B2 (en) | 2018-03-29 | 2019-12-17 | Asm Ip Holding B.V. | Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber |
| US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
| US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| KR102501472B1 (ko) | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
| TWI811348B (zh) | 2018-05-08 | 2023-08-11 | 荷蘭商Ａｓｍ 智慧財產控股公司 | 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構 |
| US12025484B2 (en) | 2018-05-08 | 2024-07-02 | Asm Ip Holding B.V. | Thin film forming method |
| KR20190129718A (ko) | 2018-05-11 | 2019-11-20 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 피도핑 금속 탄화물 막을 형성하는 방법 및 관련 반도체 소자 구조 |
| KR102596988B1 (ko) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 그에 의해 제조된 장치 |
| TWI840362B (zh) | 2018-06-04 | 2024-05-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 水氣降低的晶圓處置腔室 |
| US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
| US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
| KR102568797B1 (ko) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 시스템 |
| US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
| JP7515411B2 (ja) | 2018-06-27 | 2024-07-12 | エーエスエム・アイピー・ホールディング・ベー・フェー | 金属含有材料ならびに金属含有材料を含む膜および構造体を形成するための周期的堆積方法 |
| KR20210024462A (ko) | 2018-06-27 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 금속 함유 재료를 형성하기 위한 주기적 증착 방법 및 금속 함유 재료를 포함하는 필름 및 구조체 |
| US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
| KR102686758B1 (ko) | 2018-06-29 | 2024-07-18 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
| US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
| US10483099B1 (en) | 2018-07-26 | 2019-11-19 | Asm Ip Holding B.V. | Method for forming thermally stable organosilicon polymer film |
| US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
| US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
| US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
| US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
| US11521872B2 (en) * | 2018-09-04 | 2022-12-06 | Applied Materials, Inc. | Method and apparatus for measuring erosion and calibrating position for a moving process kit |
| KR102707956B1 (ko) | 2018-09-11 | 2024-09-19 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
| US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
| CN110970344B (zh) | 2018-10-01 | 2024-10-25 | Asmip控股有限公司 | 衬底保持设备、包含所述设备的系统及其使用方法 |
| WO2020069822A1 (en) * | 2018-10-02 | 2020-04-09 | Asml Netherlands B.V. | Laser triangulation apparatus and calibration method |
| US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| KR102592699B1 (ko) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치 |
| US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
| US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
| KR102605121B1 (ko) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
| KR102546322B1 (ko) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
| USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
| US10381219B1 (en) | 2018-10-25 | 2019-08-13 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film |
| US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
| KR20200051105A (ko) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
| US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
| US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
| US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
| US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
| US10559458B1 (en) | 2018-11-26 | 2020-02-11 | Asm Ip Holding B.V. | Method of forming oxynitride film |
| US12040199B2 (en) | 2018-11-28 | 2024-07-16 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
| US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
| KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
| US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
| JP7504584B2 (ja) | 2018-12-14 | 2024-06-24 | エーエスエム・アイピー・ホールディング・ベー・フェー | 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム |
| TWI819180B (zh) | 2019-01-17 | 2023-10-21 | 荷蘭商Ａｓｍ 智慧財產控股公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
| TWI756590B (zh) | 2019-01-22 | 2022-03-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 基板處理裝置 |
| CN111524788B (zh) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | 氧化硅的拓扑选择性膜形成的方法 |
| TWI845607B (zh) | 2019-02-20 | 2024-06-21 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 用來填充形成於基材表面內之凹部的循環沉積方法及設備 |
| KR102626263B1 (ko) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치 |
| TW202044325A (zh) | 2019-02-20 | 2020-12-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 填充一基板之一表面內所形成的一凹槽的方法、根據其所形成之半導體結構、及半導體處理設備 |
| US11482533B2 (en) | 2019-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-D NAND applications |
| TWI842826B (zh) | 2019-02-22 | 2024-05-21 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 基材處理設備及處理基材之方法 |
| KR20200108243A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 층을 포함한 구조체 및 이의 형성 방법 |
| KR20200108242A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
| KR20200108248A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOCN 층을 포함한 구조체 및 이의 형성 방법 |
| JP2020167398A (ja) | 2019-03-28 | 2020-10-08 | エーエスエム・アイピー・ホールディング・ベー・フェー | ドアオープナーおよびドアオープナーが提供される基材処理装置 |
| KR20200116855A (ko) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
| US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
| KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
| KR20200130118A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 비정질 탄소 중합체 막을 개질하는 방법 |
| KR20200130121A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
| KR20200130652A (ko) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
| JP2020188254A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー．ブイ． | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
| JP2020188255A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー．ブイ． | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
| USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
| USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
| USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
| USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
| KR20200141002A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법 |
| KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
| USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
| USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
| KR20210005515A (ko) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
| JP7499079B2 (ja) | 2019-07-09 | 2024-06-13 | エーエスエム・アイピー・ホールディング・ベー・フェー | 同軸導波管を用いたプラズマ装置、基板処理方法 |
| CN112216646A (zh) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
| KR20210010307A (ko) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| KR20210010816A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 라디칼 보조 점화 플라즈마 시스템 및 방법 |
| KR20210010820A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
| US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
| KR20210010817A (ko) | 2019-07-19 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 토폴로지-제어된 비정질 탄소 중합체 막을 형성하는 방법 |
| TWI839544B (zh) | 2019-07-19 | 2024-04-21 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 形成形貌受控的非晶碳聚合物膜之方法 |
| CN112309843A (zh) | 2019-07-29 | 2021-02-02 | Asm Ip私人控股有限公司 | 实现高掺杂剂掺入的选择性沉积方法 |
| CN112309900A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
| CN112309899A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
| US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| KR20210018759A (ko) | 2019-08-05 | 2021-02-18 | 에이에스엠 아이피 홀딩 비.브이. | 화학물질 공급원 용기를 위한 액체 레벨 센서 |
| USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
| USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
| JP2021031769A (ja) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー．ブイ． | 成膜原料混合ガス生成装置及び成膜装置 |
| USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
| USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
| USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
| KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
| USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
| US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
| KR20210024420A (ko) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법 |
| KR20210029090A (ko) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
| KR20210029663A (ko) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
| CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
| KR20210042810A (ko) | 2019-10-08 | 2021-04-20 | 에이에스엠 아이피 홀딩 비.브이. | 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법 |
| TWI846953B (zh) | 2019-10-08 | 2024-07-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 基板處理裝置 |
| TWI846966B (zh) | 2019-10-10 | 2024-07-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 形成光阻底層之方法及包括光阻底層之結構 |
| US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
| TWI834919B (zh) | 2019-10-16 | 2024-03-11 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 氧化矽之拓撲選擇性膜形成之方法 |
| US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
| KR20210047808A (ko) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | 막을 선택적으로 에칭하기 위한 장치 및 방법 |
| KR20210050453A (ko) | 2019-10-25 | 2021-05-07 | 에이에스엠 아이피 홀딩 비.브이. | 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
| KR20210053193A (ko) | 2019-10-29 | 2021-05-11 | 에이에스엠 아이피 홀딩 비.브이. | N형 도핑된 재료를 표면 상에 선택적으로 형성하는 방법, n형 도핑된 재료를 선택적으로 형성하기 위한 시스템, 및 이를 사용하여 형성된 구조체 |
| KR20210054983A (ko) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템 |
| US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
| KR20210062561A (ko) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
| KR20210065848A (ko) | 2019-11-26 | 2021-06-04 | 에이에스엠 아이피 홀딩 비.브이. | 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법 |
| CN112951697A (zh) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | 基板处理设备 |
| CN112885693A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
| CN112885692A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
| JP7527928B2 (ja) | 2019-12-02 | 2024-08-05 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基板処理装置、基板処理方法 |
| KR20210070898A (ko) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| CN112992667A (zh) | 2019-12-17 | 2021-06-18 | Asm Ip私人控股有限公司 | 形成氮化钒层的方法和包括氮化钒层的结构 |
| US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
| KR20210089077A (ko) | 2020-01-06 | 2021-07-15 | 에이에스엠 아이피 홀딩 비.브이. | 가스 공급 어셈블리, 이의 구성 요소, 및 이를 포함하는 반응기 시스템 |
| TW202142733A (zh) | 2020-01-06 | 2021-11-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 反應器系統、抬升銷、及處理方法 |
| US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
| KR20210093163A (ko) | 2020-01-16 | 2021-07-27 | 에이에스엠 아이피 홀딩 비.브이. | 고 종횡비 피처를 형성하는 방법 |
| KR102675856B1 (ko) | 2020-01-20 | 2024-06-17 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 및 박막 표면 개질 방법 |
| TW202130846A (zh) | 2020-02-03 | 2021-08-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 形成包括釩或銦層的結構之方法 |
| TW202146882A (zh) | 2020-02-04 | 2021-12-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 驗證一物品之方法、用於驗證一物品之設備、及用於驗證一反應室之系統 |
| US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
| US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
| TW202203344A (zh) | 2020-02-28 | 2022-01-16 | 荷蘭商Ａｓｍ Ｉｐ控股公司 | 專用於零件清潔的系統 |
| KR20210116240A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 조절성 접합부를 갖는 기판 핸들링 장치 |
| KR20210116249A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 록아웃 태그아웃 어셈블리 및 시스템 그리고 이의 사용 방법 |
| KR20210117157A (ko) | 2020-03-12 | 2021-09-28 | 에이에스엠 아이피 홀딩 비.브이. | 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법 |
| KR20210124042A (ko) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 |
| TW202146689A (zh) | 2020-04-03 | 2021-12-16 | 荷蘭商Ａｓｍ Ｉｐ控股公司 | 阻障層形成方法及半導體裝置的製造方法 |
| TW202145344A (zh) | 2020-04-08 | 2021-12-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 用於選擇性蝕刻氧化矽膜之設備及方法 |
| US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
| KR20210128343A (ko) | 2020-04-15 | 2021-10-26 | 에이에스엠 아이피 홀딩 비.브이. | 크롬 나이트라이드 층을 형성하는 방법 및 크롬 나이트라이드 층을 포함하는 구조 |
| US11996289B2 (en) | 2020-04-16 | 2024-05-28 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
| TW202146831A (zh) | 2020-04-24 | 2021-12-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法 |
| US11898243B2 (en) | 2020-04-24 | 2024-02-13 | Asm Ip Holding B.V. | Method of forming vanadium nitride-containing layer |
| KR20210132600A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템 |
| KR20210134226A (ko) | 2020-04-29 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | 고체 소스 전구체 용기 |
| KR20210134869A (ko) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Foup 핸들러를 이용한 foup의 빠른 교환 |
| TW202147543A (zh) | 2020-05-04 | 2021-12-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 半導體處理系統 |
| KR20210141379A (ko) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 반응기 시스템용 레이저 정렬 고정구 |
| TW202146699A (zh) | 2020-05-15 | 2021-12-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 形成矽鍺層之方法、半導體結構、半導體裝置、形成沉積層之方法、及沉積系統 |
| KR20210143653A (ko) | 2020-05-19 | 2021-11-29 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| KR20210145078A (ko) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법 |
| TW202200837A (zh) | 2020-05-22 | 2022-01-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 用於在基材上形成薄膜之反應系統 |
| TW202201602A (zh) | 2020-05-29 | 2022-01-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 基板處理方法 |
| TW202212620A (zh) | 2020-06-02 | 2022-04-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 處理基板之設備、形成膜之方法、及控制用於處理基板之設備之方法 |
| TW202200817A (zh) * | 2020-06-17 | 2022-01-01 | 美商應用材料股份有限公司 | 高溫化學氣相沉積蓋 |
| TW202218133A (zh) | 2020-06-24 | 2022-05-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 形成含矽層之方法 |
| TW202217953A (zh) | 2020-06-30 | 2022-05-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 基板處理方法 |
| TW202202649A (zh) | 2020-07-08 | 2022-01-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 基板處理方法 |
| TW202219628A (zh) | 2020-07-17 | 2022-05-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 用於光微影之結構與方法 |
| TW202204662A (zh) | 2020-07-20 | 2022-02-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 用於沉積鉬層之方法及系統 |
| US12040177B2 (en) | 2020-08-18 | 2024-07-16 | Asm Ip Holding B.V. | Methods for forming a laminate film by cyclical plasma-enhanced deposition processes |
| KR20220027026A (ko) | 2020-08-26 | 2022-03-07 | 에이에스엠 아이피 홀딩 비.브이. | 금속 실리콘 산화물 및 금속 실리콘 산질화물 층을 형성하기 위한 방법 및 시스템 |
| TW202229601A (zh) | 2020-08-27 | 2022-08-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 形成圖案化結構的方法、操控機械特性的方法、裝置結構、及基板處理系統 |
| USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
| USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
| US12009224B2 (en) | 2020-09-29 | 2024-06-11 | Asm Ip Holding B.V. | Apparatus and method for etching metal nitrides |
| KR20220045900A (ko) | 2020-10-06 | 2022-04-13 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 함유 재료를 증착하기 위한 증착 방법 및 장치 |
| CN114293174A (zh) | 2020-10-07 | 2022-04-08 | Asm Ip私人控股有限公司 | 气体供应单元和包括气体供应单元的衬底处理设备 |
| TW202229613A (zh) | 2020-10-14 | 2022-08-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 於階梯式結構上沉積材料的方法 |
| US11584993B2 (en) * | 2020-10-19 | 2023-02-21 | Applied Materials, Inc. | Thermally uniform deposition station |
| KR20220053482A (ko) | 2020-10-22 | 2022-04-29 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리 |
| TW202223136A (zh) | 2020-10-28 | 2022-06-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 用於在基板上形成層之方法、及半導體處理系統 |
| TW202235649A (zh) | 2020-11-24 | 2022-09-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 填充間隙之方法與相關之系統及裝置 |
| KR20220076343A (ko) | 2020-11-30 | 2022-06-08 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치의 반응 챔버 내에 배열되도록 구성된 인젝터 |
| CN114639631A (zh) | 2020-12-16 | 2022-06-17 | Asm Ip私人控股有限公司 | 跳动和摆动测量固定装置 |
| KR20220086494A (ko) * | 2020-12-16 | 2022-06-23 | 에이에스엠 아이피 홀딩 비.브이. | 반응 챔버에서 타겟의 위치를 결정하기 위한 고정구 및 방법 |
| TW202231903A (zh) | 2020-12-22 | 2022-08-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成 |
| TW202242184A (zh) | 2020-12-22 | 2022-11-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 前驅物膠囊、前驅物容器、氣相沉積總成、及將固態前驅物裝載至前驅物容器中之方法 |
| TW202226899A (zh) | 2020-12-22 | 2022-07-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 具匹配器的電漿處理裝置 |
| USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
| USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
| USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
| USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
| USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
Family Cites Families (383)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2745640A (en) | 1953-09-24 | 1956-05-15 | American Viscose Corp | Heat exchanging apparatus |
| US2990045A (en) | 1959-09-18 | 1961-06-27 | Lipe Rollway Corp | Thermally responsive transmission for automobile fan |
| US4393013A (en) | 1970-05-20 | 1983-07-12 | J. C. Schumacher Company | Vapor mass flow control system |
| US3833492A (en) | 1971-09-22 | 1974-09-03 | Pollution Control Ind Inc | Method of producing ozone |
| US3862397A (en) | 1972-03-24 | 1975-01-21 | Applied Materials Tech | Cool wall radiantly heated reactor |
| US3854443A (en) | 1973-12-19 | 1974-12-17 | Intel Corp | Gas reactor for depositing thin films |
| US3887790A (en) | 1974-10-07 | 1975-06-03 | Vernon H Ferguson | Wrap-around electric resistance heater |
| SE393967B (sv) | 1974-11-29 | 1977-05-31 | Sateko Oy | Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket |
| US4194536A (en) | 1976-12-09 | 1980-03-25 | Eaton Corporation | Composite tubing product |
| US4176630A (en) | 1977-06-01 | 1979-12-04 | Dynair Limited | Automatic control valves |
| US4389973A (en) | 1980-03-18 | 1983-06-28 | Oy Lohja Ab | Apparatus for performing growth of compound thin films |
| US4322592A (en) | 1980-08-22 | 1982-03-30 | Rca Corporation | Susceptor for heating semiconductor substrates |
| US4436674A (en) | 1981-07-30 | 1984-03-13 | J.C. Schumacher Co. | Vapor mass flow control system |
| US4512113A (en) | 1982-09-23 | 1985-04-23 | Budinger William D | Workpiece holder for polishing operation |
| US4499354A (en) | 1982-10-06 | 1985-02-12 | General Instrument Corp. | Susceptor for radiant absorption heater system |
| US4570328A (en) | 1983-03-07 | 1986-02-18 | Motorola, Inc. | Method of producing titanium nitride MOS device gate electrode |
| US4735259A (en) | 1984-02-21 | 1988-04-05 | Hewlett-Packard Company | Heated transfer line for capillary tubing |
| USD288556S (en) | 1984-02-21 | 1987-03-03 | Pace, Incorporated | Ornamental design for a frame of circuit elements utilized to replace damaged elements on printed circuit boards |
| US4653541A (en) | 1985-06-26 | 1987-03-31 | Parker Hannifin Corporation | Dual wall safety tube |
| US4789294A (en) * | 1985-08-30 | 1988-12-06 | Canon Kabushiki Kaisha | Wafer handling apparatus and method |
| US4722298A (en) | 1986-05-19 | 1988-02-02 | Machine Technology, Inc. | Modular processing apparatus for processing semiconductor wafers |
| US4882199A (en) | 1986-08-15 | 1989-11-21 | Massachusetts Institute Of Technology | Method of forming a metal coating on a substrate |
| US4753192A (en) | 1987-01-08 | 1988-06-28 | Btu Engineering Corporation | Movable core fast cool-down furnace |
| US4821674A (en) * | 1987-03-31 | 1989-04-18 | Deboer Wiebe B | Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment |
| US4827430A (en) | 1987-05-11 | 1989-05-02 | Baxter International Inc. | Flow measurement system |
| US5221556A (en) | 1987-06-24 | 1993-06-22 | Epsilon Technology, Inc. | Gas injectors for reaction chambers in CVD systems |
| NO161941C (no) | 1987-06-25 | 1991-04-30 | Kvaerner Eng | Fremgangsmaate ved og anlegg for transport av hydrokarboner over lang avstand fra en hydrokarbonkilde til havs. |
| US5062386A (en) | 1987-07-27 | 1991-11-05 | Epitaxy Systems, Inc. | Induction heated pancake epitaxial reactor |
| US4986215A (en) | 1988-09-01 | 1991-01-22 | Kyushu Electronic Metal Co., Ltd. | Susceptor for vapor-phase growth system |
| US5119760A (en) | 1988-12-27 | 1992-06-09 | Symetrix Corporation | Methods and apparatus for material deposition |
| JPH0834187B2 (ja) | 1989-01-13 | 1996-03-29 | 東芝セラミックス株式会社 | サセプタ |
| DE4011933C2 (de) | 1990-04-12 | 1996-11-21 | Balzers Hochvakuum | Verfahren zur reaktiven Oberflächenbehandlung eines Werkstückes sowie Behandlungskammer hierfür |
| US5167716A (en) | 1990-09-28 | 1992-12-01 | Gasonics, Inc. | Method and apparatus for batch processing a semiconductor wafer |
| JP3323530B2 (ja) | 1991-04-04 | 2002-09-09 | 株式会社日立製作所 | 半導体装置の製造方法 |
| US5243195A (en) * | 1991-04-25 | 1993-09-07 | Nikon Corporation | Projection exposure apparatus having an off-axis alignment system and method of alignment therefor |
| US5199603A (en) | 1991-11-26 | 1993-04-06 | Prescott Norman F | Delivery system for organometallic compounds |
| US5326427A (en) | 1992-09-11 | 1994-07-05 | Lsi Logic Corporation | Method of selectively etching titanium-containing materials on a semiconductor wafer using remote plasma generation |
| IT1257434B (it) | 1992-12-04 | 1996-01-17 | Cselt Centro Studi Lab Telecom | Generatore di vapori per impianti di deposizione chimica da fase vapore |
| US5421893A (en) | 1993-02-26 | 1995-06-06 | Applied Materials, Inc. | Susceptor drive and wafer displacement mechanism |
| US6122036A (en) * | 1993-10-21 | 2000-09-19 | Nikon Corporation | Projection exposure apparatus and method |
| US5681779A (en) | 1994-02-04 | 1997-10-28 | Lsi Logic Corporation | Method of doping metal layers for electromigration resistance |
| JPH07283149A (ja) | 1994-04-04 | 1995-10-27 | Nissin Electric Co Ltd | 薄膜気相成長装置 |
| US5730801A (en) | 1994-08-23 | 1998-03-24 | Applied Materials, Inc. | Compartnetalized substrate processing chamber |
| FI97730C (fi) | 1994-11-28 | 1997-02-10 | Mikrokemia Oy | Laitteisto ohutkalvojen valmistamiseksi |
| US5518549A (en) | 1995-04-18 | 1996-05-21 | Memc Electronic Materials, Inc. | Susceptor and baffle therefor |
| JP3360098B2 (ja) | 1995-04-20 | 2002-12-24 | 東京エレクトロン株式会社 | 処理装置のシャワーヘッド構造 |
| JPH08335558A (ja) | 1995-06-08 | 1996-12-17 | Nissin Electric Co Ltd | 薄膜気相成長装置 |
| NO953217L (no) | 1995-08-16 | 1997-02-17 | Aker Eng As | Metode og innretning ved rörbunter |
| US5736314A (en) | 1995-11-16 | 1998-04-07 | Microfab Technologies, Inc. | Inline thermo-cycler |
| US5796074A (en) | 1995-11-28 | 1998-08-18 | Applied Materials, Inc. | Wafer heater assembly |
| US5632919A (en) | 1996-01-25 | 1997-05-27 | T.G.M., Inc. | Temperature controlled insulation system |
| SE9600705D0 (sv) | 1996-02-26 | 1996-02-26 | Abb Research Ltd | A susceptor for a device for epitaxially growing objects and such a device |
| US5837320A (en) | 1996-02-27 | 1998-11-17 | The University Of New Mexico | Chemical vapor deposition of metal sulfide films from metal thiocarboxylate complexes with monodenate or multidentate ligands |
| US5732744A (en) | 1996-03-08 | 1998-03-31 | Control Systems, Inc. | Method and apparatus for aligning and supporting semiconductor process gas delivery and regulation components |
| US5920798A (en) | 1996-05-28 | 1999-07-06 | Matsushita Battery Industrial Co., Ltd. | Method of preparing a semiconductor layer for an optical transforming device |
| US5993916A (en) | 1996-07-12 | 1999-11-30 | Applied Materials, Inc. | Method for substrate processing with improved throughput and yield |
| KR19980026850A (ko) * | 1996-10-11 | 1998-07-15 | 김광호 | 웨이퍼의 휨을 검사하는 기능을 갖는 급속 열처리 장비 |
| US5928389A (en) | 1996-10-21 | 1999-07-27 | Applied Materials, Inc. | Method and apparatus for priority based scheduling of wafer processing within a multiple chamber semiconductor wafer processing tool |
| US5836483A (en) | 1997-02-05 | 1998-11-17 | Aerotech Dental Systems, Inc. | Self-regulating fluid dispensing cap with safety pressure relief valve for dental/medical unit fluid bottles |
| US6367410B1 (en) | 1996-12-16 | 2002-04-09 | Applied Materials, Inc. | Closed-loop dome thermal control apparatus for a semiconductor wafer processing system |
| US6035101A (en) | 1997-02-12 | 2000-03-07 | Applied Materials, Inc. | High temperature multi-layered alloy heater assembly and related methods |
| JP3752578B2 (ja) | 1997-04-21 | 2006-03-08 | 株式会社フジキン | 流体制御器用加熱装置 |
| US6201999B1 (en) | 1997-06-09 | 2001-03-13 | Applied Materials, Inc. | Method and apparatus for automatically generating schedules for wafer processing within a multichamber semiconductor wafer processing tool |
| US6083321A (en) | 1997-07-11 | 2000-07-04 | Applied Materials, Inc. | Fluid delivery system and method |
| US6312525B1 (en) | 1997-07-11 | 2001-11-06 | Applied Materials, Inc. | Modular architecture for semiconductor wafer fabrication equipment |
| US6099596A (en) * | 1997-07-23 | 2000-08-08 | Applied Materials, Inc. | Wafer out-of-pocket detection tool |
| US6013553A (en) | 1997-07-24 | 2000-01-11 | Texas Instruments Incorporated | Zirconium and/or hafnium oxynitride gate dielectric |
| KR100385946B1 (ko) | 1999-12-08 | 2003-06-02 | 삼성전자주식회사 | 원자층 증착법을 이용한 금속층 형성방법 및 그 금속층을장벽금속층, 커패시터의 상부전극, 또는 하부전극으로구비한 반도체 소자 |
| US6287965B1 (en) | 1997-07-28 | 2001-09-11 | Samsung Electronics Co, Ltd. | Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor |
| US6161500A (en) | 1997-09-30 | 2000-12-19 | Tokyo Electron Limited | Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions |
| US6248168B1 (en) | 1997-12-15 | 2001-06-19 | Tokyo Electron Limited | Spin coating apparatus including aging unit and solvent replacement unit |
| US6125789A (en) * | 1998-01-30 | 2000-10-03 | Applied Materials, Inc. | Increasing the sensitivity of an in-situ particle monitor |
| US6015465A (en) | 1998-04-08 | 2000-01-18 | Applied Materials, Inc. | Temperature control system for semiconductor process chamber |
| JPH11343571A (ja) | 1998-05-29 | 1999-12-14 | Ngk Insulators Ltd | サセプター |
| US6302964B1 (en) | 1998-06-16 | 2001-10-16 | Applied Materials, Inc. | One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system |
| US6086677A (en) | 1998-06-16 | 2000-07-11 | Applied Materials, Inc. | Dual gas faceplate for a showerhead in a semiconductor wafer processing system |
| US6148761A (en) | 1998-06-16 | 2000-11-21 | Applied Materials, Inc. | Dual channel gas distribution plate |
| US20010001384A1 (en) * | 1998-07-29 | 2001-05-24 | Takeshi Arai | Silicon epitaxial wafer and production method therefor |
| USD451893S1 (en) | 1998-10-15 | 2001-12-11 | Meto International Gmbh | Arrangement of aluminum foil coils forming an inductor of a resonant frequency identification element |
| US6454860B2 (en) | 1998-10-27 | 2002-09-24 | Applied Materials, Inc. | Deposition reactor having vaporizing, mixing and cleaning capabilities |
| KR100331544B1 (ko) | 1999-01-18 | 2002-04-06 | 윤종용 | 반응챔버에 가스를 유입하는 방법 및 이에 사용되는 샤워헤드 |
| IT1308606B1 (it) * | 1999-02-12 | 2002-01-08 | Lpe Spa | Dispositivo per maneggiare substrati mediante un istema autolivellante a depressione in reattori epistassiali ad induzione con suscettore |
| US6326597B1 (en) | 1999-04-15 | 2001-12-04 | Applied Materials, Inc. | Temperature control system for process chamber |
| FR2795745B1 (fr) | 1999-06-30 | 2001-08-03 | Saint Gobain Vitrage | Procede de depot d'une couche a base de tungstene et/ou de molybdene sur un substrat verrier, ceramique ou vitroceramique, et substrat ainsi revetu |
| US6579833B1 (en) | 1999-09-01 | 2003-06-17 | The Board Of Trustees Of The University Of Illinois | Process for converting a metal carbide to carbon by etching in halogens |
| US6656402B2 (en) | 1999-09-02 | 2003-12-02 | Micron Technology, Inc. | Wafer planarization using a uniform layer of material and method for forming uniform layer of material used in semiconductor processing |
| JP2001077088A (ja) | 1999-09-02 | 2001-03-23 | Tokyo Electron Ltd | プラズマ処理装置 |
| US6511539B1 (en) | 1999-09-08 | 2003-01-28 | Asm America, Inc. | Apparatus and method for growth of a thin film |
| US6355153B1 (en) | 1999-09-17 | 2002-03-12 | Nutool, Inc. | Chip interconnect and packaging deposition methods and structures |
| US6420792B1 (en) * | 1999-09-24 | 2002-07-16 | Texas Instruments Incorporated | Semiconductor wafer edge marking |
| KR100369324B1 (ko) | 1999-12-02 | 2003-01-24 | 한국전자통신연구원 | 평면형 마이크로 공동구조 제조 방법 |
| FI118804B (fi) | 1999-12-03 | 2008-03-31 | Asm Int | Menetelmä oksidikalvojen kasvattamiseksi |
| JP2001176952A (ja) * | 1999-12-21 | 2001-06-29 | Toshiba Mach Co Ltd | ウェーハ位置ずれ検出装置 |
| KR100767762B1 (ko) | 2000-01-18 | 2007-10-17 | 에이에스엠 저펜 가부시기가이샤 | 자가 세정을 위한 원격 플라즈마 소스를 구비한 cvd 반도체 공정장치 |
| US6407435B1 (en) | 2000-02-11 | 2002-06-18 | Sharp Laboratories Of America, Inc. | Multilayer dielectric stack and method |
| KR100803770B1 (ko) | 2000-03-07 | 2008-02-15 | 에이에스엠 인터내셔널 엔.브이. | 구배（ｇｒａｄｅｄ）박막 |
| US6598559B1 (en) | 2000-03-24 | 2003-07-29 | Applied Materials, Inc. | Temperature controlled chamber |
| AU2001247685A1 (en) | 2000-03-30 | 2001-10-15 | Tokyo Electron Limited | Method of and apparatus for tunable gas injection in a plasma processing system |
| JP2001342570A (ja) | 2000-03-30 | 2001-12-14 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法および半導体製造装置 |
| JP2001345263A (ja) * | 2000-03-31 | 2001-12-14 | Nikon Corp | 露光装置及び露光方法、並びにデバイス製造方法 |
| KR100367662B1 (ko) | 2000-05-02 | 2003-01-10 | 주식회사 셈테크놀러지 | 하이퍼서멀 중성입자 발생 장치 및 이를 채용하는 중성입자 처리 장치 |
| DE10021871A1 (de) | 2000-05-05 | 2001-11-15 | Infineon Technologies Ag | Verfahren zum Herstellen einer Barriereschicht in einem elektronischen Bauelement und Verfahren zum Herstellen eines elektronischen Bauelements mit einer Barriereschicht |
| US6863019B2 (en) | 2000-06-13 | 2005-03-08 | Applied Materials, Inc. | Semiconductor device fabrication chamber cleaning method and apparatus with recirculation of cleaning gas |
| KR100467366B1 (ko) | 2000-06-30 | 2005-01-24 | 주식회사 하이닉스반도체 | 원자층 증착법을 이용한 지르코늄산화막 형성방법 |
| US6874480B1 (en) | 2000-07-03 | 2005-04-05 | Combustion Dynamics Corp. | Flow meter |
| US6821910B2 (en) | 2000-07-24 | 2004-11-23 | University Of Maryland, College Park | Spatially programmable microelectronics process equipment using segmented gas injection showerhead with exhaust gas recirculation |
| US6660660B2 (en) | 2000-10-10 | 2003-12-09 | Asm International, Nv. | Methods for making a dielectric stack in an integrated circuit |
| US7204887B2 (en) | 2000-10-16 | 2007-04-17 | Nippon Steel Corporation | Wafer holding, wafer support member, wafer boat and heat treatment furnace |
| JP4156788B2 (ja) | 2000-10-23 | 2008-09-24 | 日本碍子株式会社 | 半導体製造装置用サセプター |
| US6824665B2 (en) | 2000-10-25 | 2004-11-30 | Shipley Company, L.L.C. | Seed layer deposition |
| JP2002158178A (ja) | 2000-11-21 | 2002-05-31 | Hitachi Kokusai Electric Inc | 基板処理装置および半導体装置の製造方法 |
| US6613695B2 (en) | 2000-11-24 | 2003-09-02 | Asm America, Inc. | Surface preparation prior to deposition |
| US20020064592A1 (en) | 2000-11-29 | 2002-05-30 | Madhav Datta | Electroless method of seed layer depostion, repair, and fabrication of Cu interconnects |
| KR100886997B1 (ko) | 2000-12-05 | 2009-03-04 | 도쿄엘렉트론가부시키가이샤 | 피처리체의 처리방법 및 처리장치 |
| US7172497B2 (en) | 2001-01-05 | 2007-02-06 | Asm Nutool, Inc. | Fabrication of semiconductor interconnect structures |
| US20020108670A1 (en) | 2001-02-12 | 2002-08-15 | Baker John Eric | High purity chemical container with external level sensor and removable dip tube |
| JP4487135B2 (ja) | 2001-03-05 | 2010-06-23 | 東京エレクトロン株式会社 | 流体制御装置 |
| US6521295B1 (en) | 2001-04-17 | 2003-02-18 | Pilkington North America, Inc. | Chemical vapor deposition of antimony-doped metal oxide and the coated article made thereby |
| US6482331B2 (en) | 2001-04-18 | 2002-11-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for preventing contamination in a plasma process chamber |
| US6847014B1 (en) | 2001-04-30 | 2005-01-25 | Lam Research Corporation | Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support |
| JP2002343790A (ja) | 2001-05-21 | 2002-11-29 | Nec Corp | 金属化合物薄膜の気相堆積方法及び半導体装置の製造方法 |
| US6709989B2 (en) | 2001-06-21 | 2004-03-23 | Motorola, Inc. | Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
| US6420279B1 (en) | 2001-06-28 | 2002-07-16 | Sharp Laboratories Of America, Inc. | Methods of using atomic layer deposition to deposit a high dielectric constant material on a substrate |
| TW539822B (en) | 2001-07-03 | 2003-07-01 | Asm Inc | Source chemical container assembly |
| US6677254B2 (en) | 2001-07-23 | 2004-01-13 | Applied Materials, Inc. | Processes for making a barrier between a dielectric and a conductor and products produced therefrom |
| US20050020071A1 (en) | 2001-07-31 | 2005-01-27 | Jun Sonobe | Method and apparatus for cleaning and method and apparatus for etching |
| US6820570B2 (en) | 2001-08-15 | 2004-11-23 | Nobel Biocare Services Ag | Atomic layer deposition reactor |
| JP2003060076A (ja) | 2001-08-21 | 2003-02-28 | Nec Corp | 半導体装置及びその製造方法 |
| US6960537B2 (en) | 2001-10-02 | 2005-11-01 | Asm America, Inc. | Incorporation of nitrogen into high k dielectric film |
| US6720259B2 (en) | 2001-10-02 | 2004-04-13 | Genus, Inc. | Passivation method for improved uniformity and repeatability for atomic layer deposition and chemical vapor deposition |
| KR100431658B1 (ko) | 2001-10-05 | 2004-05-17 | 삼성전자주식회사 | 기판 가열 장치 및 이를 갖는 장치 |
| EP1444380B1 (en) | 2001-10-26 | 2005-03-23 | Applied Materials, Inc. | Gas delivery apparatus for atomic layer deposition |
| KR20030039247A (ko) | 2001-11-12 | 2003-05-17 | 주성엔지니어링(주) | 서셉터 |
| US6926774B2 (en) | 2001-11-21 | 2005-08-09 | Applied Materials, Inc. | Piezoelectric vaporizer |
| KR100446619B1 (ko) | 2001-12-14 | 2004-09-04 | 삼성전자주식회사 | 유도 결합 플라즈마 장치 |
| JP3891267B2 (ja) | 2001-12-25 | 2007-03-14 | キヤノンアネルバ株式会社 | シリコン酸化膜作製方法 |
| US20030141820A1 (en) | 2002-01-30 | 2003-07-31 | Applied Materials, Inc. | Method and apparatus for substrate processing |
| US6734090B2 (en) | 2002-02-20 | 2004-05-11 | International Business Machines Corporation | Method of making an edge seal for a semiconductor device |
| US6594550B1 (en) | 2002-03-29 | 2003-07-15 | Asm America, Inc. | Method and system for using a buffer to track robotic movement |
| US7045430B2 (en) | 2002-05-02 | 2006-05-16 | Micron Technology Inc. | Atomic layer-deposited LaAlO3 films for gate dielectrics |
| US7122844B2 (en) | 2002-05-13 | 2006-10-17 | Cree, Inc. | Susceptor for MOCVD reactor |
| US6682973B1 (en) | 2002-05-16 | 2004-01-27 | Advanced Micro Devices, Inc. | Formation of well-controlled thin SiO, SiN, SiON layer for multilayer high-K dielectric applications |
| US20060014384A1 (en) | 2002-06-05 | 2006-01-19 | Jong-Cheol Lee | Method of forming a layer and forming a capacitor of a semiconductor device having the same layer |
| US7195693B2 (en) | 2002-06-05 | 2007-03-27 | Advanced Thermal Sciences | Lateral temperature equalizing system for large area surfaces during processing |
| US7135421B2 (en) | 2002-06-05 | 2006-11-14 | Micron Technology, Inc. | Atomic layer-deposited hafnium aluminum oxide |
| JP2004014952A (ja) | 2002-06-10 | 2004-01-15 | Tokyo Electron Ltd | 処理装置および処理方法 |
| US6858547B2 (en) | 2002-06-14 | 2005-02-22 | Applied Materials, Inc. | System and method for forming a gate dielectric |
| US7067439B2 (en) | 2002-06-14 | 2006-06-27 | Applied Materials, Inc. | ALD metal oxide deposition process using direct oxidation |
| US7601225B2 (en) | 2002-06-17 | 2009-10-13 | Asm International N.V. | System for controlling the sublimation of reactants |
| US7186385B2 (en) | 2002-07-17 | 2007-03-06 | Applied Materials, Inc. | Apparatus for providing gas to a processing chamber |
| US7357138B2 (en) | 2002-07-18 | 2008-04-15 | Air Products And Chemicals, Inc. | Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials |
| CN100374768C (zh) | 2002-07-19 | 2008-03-12 | 诚实公司 | 液体流动控制设备及方法 |
| US6921062B2 (en) | 2002-07-23 | 2005-07-26 | Advanced Technology Materials, Inc. | Vaporizer delivery ampoule |
| AU2003254266A1 (en) | 2002-07-30 | 2004-02-16 | Asm America, Inc. | Sublimation system employing carrier gas |
| JP4034145B2 (ja) | 2002-08-09 | 2008-01-16 | 住友大阪セメント株式会社 | サセプタ装置 |
| TW200408323A (en) | 2002-08-18 | 2004-05-16 | Asml Us Inc | Atomic layer deposition of high k metal oxides |
| TW200408015A (en) | 2002-08-18 | 2004-05-16 | Asml Us Inc | Atomic layer deposition of high K metal silicates |
| US20040036129A1 (en) | 2002-08-22 | 2004-02-26 | Micron Technology, Inc. | Atomic layer deposition of CMOS gates with variable work functions |
| JP2004091848A (ja) | 2002-08-30 | 2004-03-25 | Tokyo Electron Ltd | 薄膜形成装置の原料ガス供給系および薄膜形成装置 |
| WO2004025697A2 (en) | 2002-09-10 | 2004-03-25 | Fsi International, Inc. | Thermal process station with heated lid |
| KR100460841B1 (ko) | 2002-10-22 | 2004-12-09 | 한국전자통신연구원 | 플라즈마 인가 원자층 증착법을 통한 질소첨가 산화물박막의 형성방법 |
| US7122414B2 (en) | 2002-12-03 | 2006-10-17 | Asm International, Inc. | Method to fabricate dual metal CMOS devices |
| US6858524B2 (en) | 2002-12-03 | 2005-02-22 | Asm International, Nv | Method of depositing barrier layer for metal gates |
| US20040144980A1 (en) | 2003-01-27 | 2004-07-29 | Ahn Kie Y. | Atomic layer deposition of metal oxynitride layers as gate dielectrics and semiconductor device structures utilizing metal oxynitride layers |
| US7129165B2 (en) | 2003-02-04 | 2006-10-31 | Asm Nutool, Inc. | Method and structure to improve reliability of copper interconnects |
| JP4402044B2 (ja) | 2003-02-06 | 2010-01-20 | 東京エレクトロン株式会社 | プラズマ処理方法 |
| TWI338323B (en) * | 2003-02-17 | 2011-03-01 | Nikon Corp | Stage device, exposure device and manufacguring method of devices |
| US7091453B2 (en) | 2003-02-27 | 2006-08-15 | Dainippon Screen Mfg. Co., Ltd. | Heat treatment apparatus by means of light irradiation |
| US6930059B2 (en) | 2003-02-27 | 2005-08-16 | Sharp Laboratories Of America, Inc. | Method for depositing a nanolaminate film by atomic layer deposition |
| US20040168627A1 (en) | 2003-02-27 | 2004-09-02 | Sharp Laboratories Of America, Inc. | Atomic layer deposition of oxide film |
| US7192892B2 (en) | 2003-03-04 | 2007-03-20 | Micron Technology, Inc. | Atomic layer deposited dielectric layers |
| JP2004273766A (ja) | 2003-03-07 | 2004-09-30 | Watanabe Shoko:Kk | 気化装置及びそれを用いた成膜装置並びに気化方法及び成膜方法 |
| US20040198069A1 (en) | 2003-04-04 | 2004-10-07 | Applied Materials, Inc. | Method for hafnium nitride deposition |
| US7037376B2 (en) | 2003-04-11 | 2006-05-02 | Applied Materials Inc. | Backflush chamber clean |
| US7601223B2 (en) | 2003-04-29 | 2009-10-13 | Asm International N.V. | Showerhead assembly and ALD methods |
| US7033113B2 (en) | 2003-05-01 | 2006-04-25 | Shell Oil Company | Mid-line connector and method for pipe-in-pipe electrical heating |
| WO2004102648A2 (en) | 2003-05-09 | 2004-11-25 | Asm America, Inc. | Reactor surface passivation through chemical deactivation |
| US7192824B2 (en) | 2003-06-24 | 2007-03-20 | Micron Technology, Inc. | Lanthanide oxide / hafnium oxide dielectric layers |
| KR20050001793A (ko) | 2003-06-26 | 2005-01-07 | 삼성전자주식회사 | 단원자층 증착 공정의 실시간 분석 방법 |
| US7547363B2 (en) | 2003-07-08 | 2009-06-16 | Tosoh Finechem Corporation | Solid organometallic compound-filled container and filling method thereof |
| JP4298421B2 (ja) | 2003-07-23 | 2009-07-22 | エスペック株式会社 | サーマルプレートおよび試験装置 |
| US6909839B2 (en) | 2003-07-23 | 2005-06-21 | Advanced Technology Materials, Inc. | Delivery systems for efficient vaporization of precursor source material |
| KR20060054387A (ko) | 2003-08-04 | 2006-05-22 | 에이에스엠 아메리카, 인코포레이티드 | 증착 전 게르마늄 표면 처리 방법 |
| JP2005072405A (ja) | 2003-08-27 | 2005-03-17 | Sony Corp | 薄膜の形成方法および半導体装置の製造方法 |
| WO2005024928A1 (ja) | 2003-09-03 | 2005-03-17 | Tokyo Electron Limited | ガス処理装置および放熱方法 |
| KR100551138B1 (ko) | 2003-09-09 | 2006-02-10 | 어댑티브프라즈마테크놀로지 주식회사 | 균일한 플라즈마 발생을 위한 적응형 플라즈마 소스 |
| US7414281B1 (en) | 2003-09-09 | 2008-08-19 | Spansion Llc | Flash memory with high-K dielectric material between substrate and gate |
| KR100938534B1 (ko) | 2003-09-19 | 2010-01-25 | 가부시키가이샤 히다치 고쿠사이 덴키 | 반도체 장치의 제조 방법 및 기판 처리 장치 |
| US7156380B2 (en) | 2003-09-29 | 2007-01-02 | Asm International, N.V. | Safe liquid source containers |
| US6875677B1 (en) | 2003-09-30 | 2005-04-05 | Sharp Laboratories Of America, Inc. | Method to control the interfacial layer for deposition of high dielectric constant films |
| US7205247B2 (en) | 2003-09-30 | 2007-04-17 | Aviza Technology, Inc. | Atomic layer deposition of hafnium-based high-k dielectric |
| JP2007511902A (ja) | 2003-10-29 | 2007-05-10 | エーエスエム アメリカ インコーポレイテッド | 薄膜成長用反応装置 |
| US7329947B2 (en) | 2003-11-07 | 2008-02-12 | Sumitomo Mitsubishi Silicon Corporation | Heat treatment jig for semiconductor substrate |
| US7071118B2 (en) | 2003-11-12 | 2006-07-04 | Veeco Instruments, Inc. | Method and apparatus for fabricating a conformal thin film on a substrate |
| KR100550641B1 (ko) | 2003-11-22 | 2006-02-09 | 주식회사 하이닉스반도체 | 산화하프늄과 산화알루미늄이 혼합된 유전막 및 그 제조방법 |
| US7071051B1 (en) | 2004-01-20 | 2006-07-04 | Advanced Micro Devices, Inc. | Method for forming a thin, high quality buffer layer in a field effect transistor and related structure |
| DE102004005385A1 (de) | 2004-02-03 | 2005-10-20 | Infineon Technologies Ag | Verwendung von gelösten Hafniumalkoxiden bzw. Zirkoniumalkoxiden als Precursoren für Hafniumoxid- und Hafniumoxynitridschichten bzw. Zirkoniumoxid- und Zirkoniumoxynitridschichten |
| US20050187647A1 (en) | 2004-02-19 | 2005-08-25 | Kuo-Hua Wang | Intelligent full automation controlled flow for a semiconductor furnace tool |
| US20060062910A1 (en) | 2004-03-01 | 2006-03-23 | Meiere Scott H | Low zirconium, hafnium-containing compositions, processes for the preparation thereof and methods of use thereof |
| US20050214458A1 (en) | 2004-03-01 | 2005-09-29 | Meiere Scott H | Low zirconium hafnium halide compositions |
| US20050214457A1 (en) | 2004-03-29 | 2005-09-29 | Applied Materials, Inc. | Deposition of low dielectric constant films by N2O addition |
| CN1292092C (zh) | 2004-04-01 | 2006-12-27 | 南昌大学 | 用于金属有机化学气相沉积设备的双层进气喷头 |
| US7273526B2 (en) | 2004-04-15 | 2007-09-25 | Asm Japan K.K. | Thin-film deposition apparatus |
| TWD110109S1 (zh) | 2004-04-21 | 2006-04-11 | 東京威力科創股份有限公司 | 半導體製造用靜電夾盤吸附板 |
| US20050252449A1 (en) | 2004-05-12 | 2005-11-17 | Nguyen Son T | Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system |
| US20060019033A1 (en) | 2004-05-21 | 2006-01-26 | Applied Materials, Inc. | Plasma treatment of hafnium-containing materials |
| US7651583B2 (en) | 2004-06-04 | 2010-01-26 | Tokyo Electron Limited | Processing system and method for treating a substrate |
| KR100589062B1 (ko) | 2004-06-10 | 2006-06-12 | 삼성전자주식회사 | 원자층 적층 방식의 박막 형성방법 및 이를 이용한 반도체소자의 커패시터 형성방법 |
| US7132360B2 (en) | 2004-06-10 | 2006-11-07 | Freescale Semiconductor, Inc. | Method for treating a semiconductor surface to form a metal-containing layer |
| JP4534619B2 (ja) | 2004-06-21 | 2010-09-01 | 株式会社Ｓｕｍｃｏ | 半導体シリコン基板用熱処理治具 |
| KR100578819B1 (ko) | 2004-07-15 | 2006-05-11 | 삼성전자주식회사 | 원자층 적층 방법과 이를 이용한 게이트 구조물의 제조방법 및 커패시터의 제조 방법 |
| CN1997770A (zh) * | 2004-07-30 | 2007-07-11 | Lpe公司 | 具有控制定位的衬托器的外延反应器 |
| ITMI20041677A1 (it) | 2004-08-30 | 2004-11-30 | E T C Epitaxial Technology Ct | Processo di pulitura e processo operativo per un reattore cvd. |
| US8158488B2 (en) | 2004-08-31 | 2012-04-17 | Micron Technology, Inc. | Method of increasing deposition rate of silicon dioxide on a catalyst |
| US20060060930A1 (en) | 2004-09-17 | 2006-03-23 | Metz Matthew V | Atomic layer deposition of high dielectric constant gate dielectrics |
| DE102005045081B4 (de) | 2004-09-29 | 2011-07-07 | Covalent Materials Corp. | Suszeptor |
| US7241475B2 (en) | 2004-09-30 | 2007-07-10 | The Aerospace Corporation | Method for producing carbon surface films by plasma exposure of a carbide compound |
| US20060257563A1 (en) | 2004-10-13 | 2006-11-16 | Seok-Joo Doh | Method of fabricating silicon-doped metal oxide layer using atomic layer deposition technique |
| JP4453984B2 (ja) | 2004-10-19 | 2010-04-21 | キヤノンアネルバ株式会社 | 基板支持・搬送用トレイ |
| JP2006135161A (ja) | 2004-11-08 | 2006-05-25 | Canon Inc | 絶縁膜の形成方法及び装置 |
| TWI393170B (zh) * | 2004-11-18 | 2013-04-11 | 尼康股份有限公司 | A position measuring method, a position control method, a measuring method, a loading method, an exposure method, an exposure apparatus, and a device manufacturing method |
| EP1815493B1 (en) | 2004-11-24 | 2008-04-02 | OC Oerlikon Balzers AG | Vacuum processing chamber for very large area substrates |
| US20060113675A1 (en) | 2004-12-01 | 2006-06-01 | Chung-Liang Chang | Barrier material and process for Cu interconnect |
| US7235501B2 (en) | 2004-12-13 | 2007-06-26 | Micron Technology, Inc. | Lanthanum hafnium oxide dielectrics |
| US7396732B2 (en) | 2004-12-17 | 2008-07-08 | Interuniversitair Microelektronica Centrum Vzw (Imec) | Formation of deep trench airgaps and related applications |
| JP2006186271A (ja) | 2004-12-28 | 2006-07-13 | Sharp Corp | 気相成長装置および成膜済基板の製造方法 |
| US7560395B2 (en) | 2005-01-05 | 2009-07-14 | Micron Technology, Inc. | Atomic layer deposited hafnium tantalum oxide dielectrics |
| KR101463581B1 (ko) | 2005-01-18 | 2014-11-20 | 에이에스엠 아메리카, 인코포레이티드 | 박막 성장용 반응 시스템 |
| US7298009B2 (en) | 2005-02-01 | 2007-11-20 | Infineon Technologies Ag | Semiconductor method and device with mixed orientation substrate |
| US6972478B1 (en) | 2005-03-07 | 2005-12-06 | Advanced Micro Devices, Inc. | Integrated circuit and method for its manufacture |
| US7422636B2 (en) | 2005-03-25 | 2008-09-09 | Tokyo Electron Limited | Plasma enhanced atomic layer deposition system having reduced contamination |
| US20060226117A1 (en) | 2005-03-29 | 2006-10-12 | Bertram Ronald T | Phase change based heating element system and method |
| JP4694878B2 (ja) | 2005-04-20 | 2011-06-08 | Ｏｋｉセミコンダクタ株式会社 | 半導体製造装置および半導体装置の製造方法 |
| US20070155138A1 (en) | 2005-05-24 | 2007-07-05 | Pierre Tomasini | Apparatus and method for depositing silicon germanium films |
| TW200709296A (en) | 2005-05-31 | 2007-03-01 | Tokyo Electron Ltd | Plasma treatment apparatus and plasma treatment method |
| KR100960273B1 (ko) | 2005-06-13 | 2010-06-04 | 가부시키가이샤 히다치 고쿠사이 덴키 | 반도체 장치의 제조 방법 및 기판 처리 장치 |
| JP4753173B2 (ja) | 2005-06-17 | 2011-08-24 | 株式会社フジキン | 流体制御装置 |
| US7575990B2 (en) | 2005-07-01 | 2009-08-18 | Macronix International Co., Ltd. | Method of forming self-aligned contacts and local interconnects |
| KR20080028963A (ko) | 2005-07-08 | 2008-04-02 | 에비자 테크놀로지, 인크. | 실리콘 함유 필름의 증착 방법 |
| US20070010072A1 (en) | 2005-07-09 | 2007-01-11 | Aviza Technology, Inc. | Uniform batch film deposition process and films so produced |
| US7314838B2 (en) | 2005-07-21 | 2008-01-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming a high density dielectric film by chemical vapor deposition |
| TWI313486B (en) * | 2005-07-28 | 2009-08-11 | Nuflare Technology Inc | Position measurement apparatus and method and writing apparatus and method |
| US20070028842A1 (en) | 2005-08-02 | 2007-02-08 | Makoto Inagawa | Vacuum chamber bottom |
| US20070037412A1 (en) | 2005-08-05 | 2007-02-15 | Tokyo Electron Limited | In-situ atomic layer deposition |
| US7718225B2 (en) | 2005-08-17 | 2010-05-18 | Applied Materials, Inc. | Method to control semiconductor film deposition characteristics |
| USD557226S1 (en) | 2005-08-25 | 2007-12-11 | Hitachi High-Technologies Corporation | Electrode cover for a plasma processing apparatus |
| US7402534B2 (en) | 2005-08-26 | 2008-07-22 | Applied Materials, Inc. | Pretreatment processes within a batch ALD reactor |
| US7393736B2 (en) | 2005-08-29 | 2008-07-01 | Micron Technology, Inc. | Atomic layer deposition of Zrx Hfy Sn1-x-y O2 films as high k gate dielectrics |
| JP2007088113A (ja) | 2005-09-21 | 2007-04-05 | Sony Corp | 半導体装置の製造方法 |
| US20070065578A1 (en) | 2005-09-21 | 2007-03-22 | Applied Materials, Inc. | Treatment processes for a batch ALD reactor |
| US7691204B2 (en) | 2005-09-30 | 2010-04-06 | Applied Materials, Inc. | Film formation apparatus and methods including temperature and emissivity/pattern compensation |
| JP4940635B2 (ja) | 2005-11-14 | 2012-05-30 | 東京エレクトロン株式会社 | 加熱装置、熱処理装置及び記憶媒体 |
| GB2432363B (en) | 2005-11-16 | 2010-06-23 | Epichem Ltd | Hafnocene and zirconocene precursors, and use thereof in atomic layer deposition |
| US20070116873A1 (en) | 2005-11-18 | 2007-05-24 | Tokyo Electron Limited | Apparatus for thermal and plasma enhanced vapor deposition and method of operating |
| JP4666496B2 (ja) | 2005-12-07 | 2011-04-06 | 大日本スクリーン製造株式会社 | 基板熱処理装置 |
| US7592251B2 (en) | 2005-12-08 | 2009-09-22 | Micron Technology, Inc. | Hafnium tantalum titanium oxide films |
| KR101296911B1 (ko) * | 2005-12-28 | 2013-08-14 | 엘지디스플레이 주식회사 | 평판표시소자의 제조장치 및 그의 정전기량 검출장치 및검출방법 |
| TWI284390B (en) | 2006-01-10 | 2007-07-21 | Ind Tech Res Inst | Manufacturing method of charge store device |
| US8088248B2 (en) | 2006-01-11 | 2012-01-03 | Lam Research Corporation | Gas switching section including valves having different flow coefficients for gas distribution system |
| JP2007191792A (ja) | 2006-01-19 | 2007-08-02 | Atto Co Ltd | ガス分離型シャワーヘッド |
| US8673413B2 (en) | 2006-01-27 | 2014-03-18 | Tosoh Finechem Corporation | Method for packing solid organometallic compound and packed container |
| US7740705B2 (en) | 2006-03-08 | 2010-06-22 | Tokyo Electron Limited | Exhaust apparatus configured to reduce particle contamination in a deposition system |
| US7794546B2 (en) | 2006-03-08 | 2010-09-14 | Tokyo Electron Limited | Sealing device and method for a processing system |
| KR20070093493A (ko) | 2006-03-14 | 2007-09-19 | 엘지이노텍 주식회사 | 서셉터 및 반도체 제조장치 |
| JP2007266464A (ja) | 2006-03-29 | 2007-10-11 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| US8951478B2 (en) | 2006-03-30 | 2015-02-10 | Applied Materials, Inc. | Ampoule with a thermally conductive coating |
| US7410852B2 (en) | 2006-04-21 | 2008-08-12 | International Business Machines Corporation | Opto-thermal annealing methods for forming metal gate and fully silicided gate field effect transistors |
| US7537804B2 (en) | 2006-04-28 | 2009-05-26 | Micron Technology, Inc. | ALD methods in which two or more different precursors are utilized with one or more reactants to form materials over substrates |
| US8278176B2 (en) | 2006-06-07 | 2012-10-02 | Asm America, Inc. | Selective epitaxial formation of semiconductor films |
| JP4193883B2 (ja) | 2006-07-05 | 2008-12-10 | 住友電気工業株式会社 | 有機金属気相成長装置 |
| KR100799735B1 (ko) | 2006-07-10 | 2008-02-01 | 삼성전자주식회사 | 금속 산화물 형성 방법 및 이를 수행하기 위한 장치 |
| KR100791334B1 (ko) | 2006-07-26 | 2008-01-07 | 삼성전자주식회사 | 원자층 증착법을 이용한 금속 산화막 형성 방법 |
| US7749879B2 (en) | 2006-08-03 | 2010-07-06 | Micron Technology, Inc. | ALD of silicon films on germanium |
| KR100753020B1 (ko) | 2006-08-30 | 2007-08-30 | 한국화학연구원 | 원자층 증착법을 이용한 비휘발성 부유 게이트 메모리소자를 위한 나노적층체의 제조방법 |
| US7605030B2 (en) | 2006-08-31 | 2009-10-20 | Micron Technology, Inc. | Hafnium tantalum oxynitride high-k dielectric and metal gates |
| US20080057659A1 (en) | 2006-08-31 | 2008-03-06 | Micron Technology, Inc. | Hafnium aluminium oxynitride high-K dielectric and metal gates |
| US20080241805A1 (en) | 2006-08-31 | 2008-10-02 | Q-Track Corporation | System and method for simulated dosimetry using a real time locating system |
| US7976898B2 (en) | 2006-09-20 | 2011-07-12 | Asm Genitech Korea Ltd. | Atomic layer deposition apparatus |
| US7723648B2 (en) | 2006-09-25 | 2010-05-25 | Tokyo Electron Limited | Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system |
| USD593969S1 (en) | 2006-10-10 | 2009-06-09 | Tokyo Electron Limited | Processing chamber for manufacturing semiconductors |
| US8986456B2 (en) | 2006-10-10 | 2015-03-24 | Asm America, Inc. | Precursor delivery system |
| WO2008045972A2 (en) | 2006-10-10 | 2008-04-17 | Asm America, Inc. | Precursor delivery system |
| US7749574B2 (en) | 2006-11-14 | 2010-07-06 | Applied Materials, Inc. | Low temperature ALD SiO2 |
| US7776395B2 (en) | 2006-11-14 | 2010-08-17 | Applied Materials, Inc. | Method of depositing catalyst assisted silicates of high-k materials |
| US7976634B2 (en) | 2006-11-21 | 2011-07-12 | Applied Materials, Inc. | Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems |
| DE102007002962B3 (de) | 2007-01-19 | 2008-07-31 | Qimonda Ag | Verfahren zum Herstellen einer dielektrischen Schicht und zum Herstellen eines Kondensators |
| US7833353B2 (en) | 2007-01-24 | 2010-11-16 | Asm Japan K.K. | Liquid material vaporization apparatus for semiconductor processing apparatus |
| US20080216077A1 (en) | 2007-03-02 | 2008-09-04 | Applied Materials, Inc. | Software sequencer for integrated substrate processing system |
| US7833913B2 (en) | 2007-03-20 | 2010-11-16 | Tokyo Electron Limited | Method of forming crystallographically stabilized doped hafnium zirconium based films |
| KR100829759B1 (ko) | 2007-04-04 | 2008-05-15 | 삼성에스디아이 주식회사 | 카바이드 유도 탄소를 이용한 카본나노튜브 혼성체, 이를포함하는 전자 방출원 및 상기 전자 방출원을 구비한 전자방출 소자 |
| US7575968B2 (en) | 2007-04-30 | 2009-08-18 | Freescale Semiconductor, Inc. | Inverse slope isolation and dual surface orientation integration |
| JP5103056B2 (ja) | 2007-05-15 | 2012-12-19 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| CN100590804C (zh) | 2007-06-22 | 2010-02-17 | 中芯国际集成电路制造(上海)有限公司 | 原子层沉积方法以及形成的半导体器件 |
| US20090000550A1 (en) | 2007-06-29 | 2009-01-01 | Applied Materials, Inc. | Manifold assembly |
| JP4900110B2 (ja) | 2007-07-20 | 2012-03-21 | 東京エレクトロン株式会社 | 薬液気化タンク及び薬液処理システム |
| US7720560B2 (en) | 2007-07-26 | 2010-05-18 | International Business Machines Corporation | Semiconductor manufacturing process monitoring |
| US8004045B2 (en) | 2007-07-27 | 2011-08-23 | Panasonic Corporation | Semiconductor device and method for producing the same |
| US8440259B2 (en) | 2007-09-05 | 2013-05-14 | Intermolecular, Inc. | Vapor based combinatorial processing |
| JP5347294B2 (ja) | 2007-09-12 | 2013-11-20 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
| JP4986784B2 (ja) | 2007-09-18 | 2012-07-25 | 東京エレクトロン株式会社 | 処理システムの制御装置、処理システムの制御方法および制御プログラムを記憶した記憶媒体 |
| US20090085156A1 (en) | 2007-09-28 | 2009-04-02 | Gilbert Dewey | Metal surface treatments for uniformly growing dielectric layers |
| US7776698B2 (en) | 2007-10-05 | 2010-08-17 | Applied Materials, Inc. | Selective formation of silicon carbon epitaxial layer |
| US20090095221A1 (en) | 2007-10-16 | 2009-04-16 | Alexander Tam | Multi-gas concentric injection showerhead |
| US20090139657A1 (en) | 2007-12-04 | 2009-06-04 | Applied Materials, Inc. | Etch system |
| KR101571180B1 (ko) * | 2007-12-27 | 2015-11-23 | 램 리써치 코포레이션 | 위치 및 오프셋을 결정하는 장치 및 방법 |
| US20090214777A1 (en) | 2008-02-22 | 2009-08-27 | Demetrius Sarigiannis | Multiple ampoule delivery systems |
| KR100968132B1 (ko) | 2008-02-29 | 2010-07-06 | (주)얼라이드 테크 파인더즈 | 안테나 및 이를 구비한 반도체 장치 |
| US8252114B2 (en) | 2008-03-28 | 2012-08-28 | Tokyo Electron Limited | Gas distribution system and method for distributing process gas in a processing system |
| US7659158B2 (en) | 2008-03-31 | 2010-02-09 | Applied Materials, Inc. | Atomic layer deposition processes for non-volatile memory devices |
| JP2009252851A (ja) * | 2008-04-02 | 2009-10-29 | Nikon Corp | 露光装置及びデバイス製造方法 |
| WO2009129391A2 (en) | 2008-04-17 | 2009-10-22 | Applied Materials, Inc. | Low temperature thin film transistor process, device property, and device stability improvement |
| US8076237B2 (en) | 2008-05-09 | 2011-12-13 | Asm America, Inc. | Method and apparatus for 3D interconnect |
| JP2009295932A (ja) * | 2008-06-09 | 2009-12-17 | Canon Inc | 露光装置及びデバイス製造方法 |
| US8726837B2 (en) * | 2008-06-23 | 2014-05-20 | Applied Materials, Inc. | Semiconductor process chamber vision and monitoring system |
| KR20100015213A (ko) | 2008-08-04 | 2010-02-12 | 삼성전기주식회사 | Ｃｖｄ용 샤워 헤드 및 이를 구비하는 화학 기상 증착 장치 |
| US20100025796A1 (en) | 2008-08-04 | 2010-02-04 | Amir Massoud Dabiran | Microchannel plate photocathode |
| JP2010087467A (ja) * | 2008-09-04 | 2010-04-15 | Tokyo Electron Ltd | 成膜装置、基板処理装置、成膜方法及びこの成膜方法を実行させるためのプログラムを記録した記録媒体 |
| US9711373B2 (en) | 2008-09-22 | 2017-07-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating a gate dielectric for high-k metal gate devices |
| TWD135511S1 (zh) | 2008-10-03 | 2010-06-21 | 日本碍子股份有限公司 | 靜電夾頭 |
| US8293016B2 (en) | 2008-10-07 | 2012-10-23 | Applied Materials, Inc. | Apparatus for efficient removal of halogen residues from etched substrates |
| WO2010062582A2 (en) | 2008-10-27 | 2010-06-03 | Applied Materials, Inc. | Vapor deposition method for ternary compounds |
| JP2010153769A (ja) * | 2008-11-19 | 2010-07-08 | Tokyo Electron Ltd | 基板位置検出装置、基板位置検出方法、成膜装置、成膜方法、プログラム及びコンピュータ可読記憶媒体 |
| US20100130017A1 (en) | 2008-11-21 | 2010-05-27 | Axcelis Technologies, Inc. | Front end of line plasma mediated ashing processes and apparatus |
| US8216380B2 (en) | 2009-01-08 | 2012-07-10 | Asm America, Inc. | Gap maintenance for opening to process chamber |
| KR101691044B1 (ko) | 2009-02-04 | 2016-12-29 | 맷슨 테크놀로지, 인크. | 기판의 표면에 걸친 온도 프로파일을 방사상으로 튜닝하는 정전 척 시스템 및 방법 |
| US8287648B2 (en) | 2009-02-09 | 2012-10-16 | Asm America, Inc. | Method and apparatus for minimizing contamination in semiconductor processing chamber |
| JP5221421B2 (ja) | 2009-03-10 | 2013-06-26 | 東京エレクトロン株式会社 | シャワーヘッド及びプラズマ処理装置 |
| US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
| SG174993A1 (en) | 2009-04-21 | 2011-11-28 | Applied Materials Inc | Cvd apparatus for improved film thickness non-uniformity and particle performance |
| US8071452B2 (en) | 2009-04-27 | 2011-12-06 | Asm America, Inc. | Atomic layer deposition of hafnium lanthanum oxides |
| US8071451B2 (en) | 2009-07-29 | 2011-12-06 | Axcelis Technologies, Inc. | Method of doping semiconductors |
| US8802201B2 (en) | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
| US8877655B2 (en) | 2010-05-07 | 2014-11-04 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
| US8883270B2 (en) | 2009-08-14 | 2014-11-11 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen—oxygen species |
| USD634719S1 (en) | 2009-08-27 | 2011-03-22 | Ebara Corporation | Elastic membrane for semiconductor wafer polishing apparatus |
| US20110061810A1 (en) * | 2009-09-11 | 2011-03-17 | Applied Materials, Inc. | Apparatus and Methods for Cyclical Oxidation and Etching |
| US20110097901A1 (en) | 2009-10-26 | 2011-04-28 | Applied Materials, Inc. | Dual mode inductively coupled plasma reactor with adjustable phase coil assembly |
| JP5451324B2 (ja) | 2009-11-10 | 2014-03-26 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| US8367528B2 (en) | 2009-11-17 | 2013-02-05 | Asm America, Inc. | Cyclical epitaxial deposition and etch |
| US8709551B2 (en) | 2010-03-25 | 2014-04-29 | Novellus Systems, Inc. | Smooth silicon-containing films |
| US8728956B2 (en) | 2010-04-15 | 2014-05-20 | Novellus Systems, Inc. | Plasma activated conformal film deposition |
| US9443753B2 (en) | 2010-07-30 | 2016-09-13 | Applied Materials, Inc. | Apparatus for controlling the flow of a gas in a process chamber |
| US9449858B2 (en) | 2010-08-09 | 2016-09-20 | Applied Materials, Inc. | Transparent reflector plate for rapid thermal processing chamber |
| WO2012061278A1 (en) | 2010-11-05 | 2012-05-10 | Synos Technology, Inc. | Radical reactor with multiple plasma chambers |
| JP5573666B2 (ja) | 2010-12-28 | 2014-08-20 | 東京エレクトロン株式会社 | 原料供給装置及び成膜装置 |
| JP5820731B2 (ja) | 2011-03-22 | 2015-11-24 | 株式会社日立国際電気 | 基板処理装置および固体原料補充方法 |
| JP5203482B2 (ja) | 2011-03-28 | 2013-06-05 | 株式会社小松製作所 | 加熱装置 |
| US8900402B2 (en) | 2011-05-10 | 2014-12-02 | Lam Research Corporation | Semiconductor processing system having multiple decoupled plasma sources |
| US8871617B2 (en) | 2011-04-22 | 2014-10-28 | Asm Ip Holding B.V. | Deposition and reduction of mixed metal oxide thin films |
| US8809170B2 (en) | 2011-05-19 | 2014-08-19 | Asm America Inc. | High throughput cyclical epitaxial deposition and etch process |
| US20120304935A1 (en) | 2011-05-31 | 2012-12-06 | Oosterlaken Theodorus G M | Bubbler assembly and method for vapor flow control |
| US9175392B2 (en) | 2011-06-17 | 2015-11-03 | Intermolecular, Inc. | System for multi-region processing |
| US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
| US9341296B2 (en) | 2011-10-27 | 2016-05-17 | Asm America, Inc. | Heater jacket for a fluid line |
| US9096931B2 (en) | 2011-10-27 | 2015-08-04 | Asm America, Inc | Deposition valve assembly and method of heating the same |
| US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
| US8927059B2 (en) | 2011-11-08 | 2015-01-06 | Applied Materials, Inc. | Deposition of metal films using alane-based precursors |
| US9167625B2 (en) | 2011-11-23 | 2015-10-20 | Asm Ip Holding B.V. | Radiation shielding for a substrate holder |
| US9005539B2 (en) | 2011-11-23 | 2015-04-14 | Asm Ip Holding B.V. | Chamber sealing member |
| USD691974S1 (en) | 2011-12-22 | 2013-10-22 | Tokyo Electron Limited | Holding pad for transferring a wafer |
| US9202727B2 (en) | 2012-03-02 | 2015-12-01 | ASM IP Holding | Susceptor heater shim |
| US8946830B2 (en) | 2012-04-04 | 2015-02-03 | Asm Ip Holdings B.V. | Metal oxide protective layer for a semiconductor device |
| US9029253B2 (en) | 2012-05-02 | 2015-05-12 | Asm Ip Holding B.V. | Phase-stabilized thin films, structures and devices including the thin films, and methods of forming same |
| US8728832B2 (en) | 2012-05-07 | 2014-05-20 | Asm Ip Holdings B.V. | Semiconductor device dielectric interface layer |
| US8933375B2 (en) | 2012-06-27 | 2015-01-13 | Asm Ip Holding B.V. | Susceptor heater and method of heating a substrate |
| US9558931B2 (en) | 2012-07-27 | 2017-01-31 | Asm Ip Holding B.V. | System and method for gas-phase sulfur passivation of a semiconductor surface |
| US9117866B2 (en) | 2012-07-31 | 2015-08-25 | Asm Ip Holding B.V. | Apparatus and method for calculating a wafer position in a processing chamber under process conditions |
| US9659799B2 (en) | 2012-08-28 | 2017-05-23 | Asm Ip Holding B.V. | Systems and methods for dynamic semiconductor process scheduling |
| US9169975B2 (en) | 2012-08-28 | 2015-10-27 | Asm Ip Holding B.V. | Systems and methods for mass flow controller verification |
| US9021985B2 (en) | 2012-09-12 | 2015-05-05 | Asm Ip Holdings B.V. | Process gas management for an inductively-coupled plasma deposition reactor |
| US9324811B2 (en) | 2012-09-26 | 2016-04-26 | Asm Ip Holding B.V. | Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same |
| US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
| JP5960028B2 (ja) | 2012-10-31 | 2016-08-02 | 東京エレクトロン株式会社 | 熱処理装置 |
| US8894870B2 (en) | 2013-02-01 | 2014-11-25 | Asm Ip Holding B.V. | Multi-step method and apparatus for etching compounds containing a metal |
| US9484191B2 (en) | 2013-03-08 | 2016-11-01 | Asm Ip Holding B.V. | Pulsed remote plasma method and system |
| US9589770B2 (en) | 2013-03-08 | 2017-03-07 | Asm Ip Holding B.V. | Method and systems for in-situ formation of intermediate reactive species |
| CN110592554A (zh) | 2013-06-26 | 2019-12-20 | 应用材料公司 | 沉积金属合金膜的方法 |
| USD705745S1 (en) | 2013-07-08 | 2014-05-27 | Witricity Corporation | Printed resonator coil |
| US8993054B2 (en) | 2013-07-12 | 2015-03-31 | Asm Ip Holding B.V. | Method and system to reduce outgassing in a reaction chamber |
| US9018111B2 (en) | 2013-07-22 | 2015-04-28 | Asm Ip Holding B.V. | Semiconductor reaction chamber with plasma capabilities |
| US9396934B2 (en) | 2013-08-14 | 2016-07-19 | Asm Ip Holding B.V. | Methods of forming films including germanium tin and structures and devices including the films |
| USD716742S1 (en) | 2013-09-13 | 2014-11-04 | Asm Ip Holding B.V. | Substrate supporter for semiconductor deposition apparatus |
| US9240412B2 (en) | 2013-09-27 | 2016-01-19 | Asm Ip Holding B.V. | Semiconductor structure and device and methods of forming same using selective epitaxial process |
-
2012
- 2012-07-31 US US13/563,066 patent/US9117866B2/en active Active
-
2013
- 2013-07-22 TW TW106138800A patent/TWI677044B/zh active
- 2013-07-22 TW TW102126071A patent/TWI646611B/zh active
- 2013-07-30 KR KR1020130089998A patent/KR102090834B1/ko active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| US20140036274A1 (en) | 2014-02-06 |
| TWI677044B (zh) | 2019-11-11 |
| TW201810493A (zh) | 2018-03-16 |
| KR20140016838A (ko) | 2014-02-10 |
| US9117866B2 (en) | 2015-08-25 |
| TWI646611B (zh) | 2019-01-01 |
| KR102090834B1 (ko) | 2020-03-19 |
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