KR950701136A - 막 유전체 격리 ic 제조(membrane dielectric isolation ic fabrication) - Google Patents

막 유전체 격리 ic 제조(membrane dielectric isolation ic fabrication)

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Publication number
KR950701136A
KR950701136A KR1019940703573A KR19940703573A KR950701136A KR 950701136 A KR950701136 A KR 950701136A KR 1019940703573 A KR1019940703573 A KR 1019940703573A KR 19940703573 A KR19940703573 A KR 19940703573A KR 950701136 A KR950701136 A KR 950701136A
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KR
South Korea
Prior art keywords
fabrication
dielectric isolation
membrane dielectric
membrane
isolation
Prior art date
Application number
KR1019940703573A
Other languages
English (en)
Other versions
KR100374893B1 (ko
Inventor
제이. 리디 글렌
Original Assignee
제이. 리디 글렌
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Application filed by 제이. 리디 글렌 filed Critical 제이. 리디 글렌
Publication of KR950701136A publication Critical patent/KR950701136A/ko
Application granted granted Critical
Publication of KR100374893B1 publication Critical patent/KR100374893B1/ko

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Bipolar Transistors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • X-Ray Techniques (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Pressure Sensors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Weting (AREA)
  • Formation Of Insulating Films (AREA)
KR1019940703573A 1992-04-08 1994-10-08 막 유전체 격리 ic 제조(membrane dielectric isolation ic fabrication) KR950701136A (ko)

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KR1019940703573A KR950701136A (ko) 1992-04-08 1994-10-08 막 유전체 격리 ic 제조(membrane dielectric isolation ic fabrication)
KR20017011066A KR100397214B1 (ko) 1992-04-08 2001-08-30
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KR20210024262A (ko) * 2013-03-27 2021-03-04 퀄컴 인코포레이티드 절연체 아래에 상호접속부를 갖는 반도체―온―절연체 집적 회로

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