DE69420981D1 - Integrierte monolithische Mikrowellenschaltung - Google Patents

Integrierte monolithische Mikrowellenschaltung

Info

Publication number
DE69420981D1
DE69420981D1 DE69420981T DE69420981T DE69420981D1 DE 69420981 D1 DE69420981 D1 DE 69420981D1 DE 69420981 T DE69420981 T DE 69420981T DE 69420981 T DE69420981 T DE 69420981T DE 69420981 D1 DE69420981 D1 DE 69420981D1
Authority
DE
Germany
Prior art keywords
microwave circuit
monolithic microwave
integrated monolithic
integrated
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69420981T
Other languages
English (en)
Other versions
DE69420981T2 (de
Inventor
Itaru Maekawa
Takahiro Ohgihara
Kuninobu Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP01679593A external-priority patent/JP3371151B2/ja
Priority claimed from JP08564193A external-priority patent/JP3250314B2/ja
Priority claimed from JP6997693A external-priority patent/JPH06283942A/ja
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE69420981D1 publication Critical patent/DE69420981D1/de
Application granted granted Critical
Publication of DE69420981T2 publication Critical patent/DE69420981T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/12—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
    • H03D7/125—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes with field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H03F3/1935—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices with junction-FET devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
DE69420981T 1993-01-08 1994-01-07 Integrierte monolithische Mikrowellenschaltung Expired - Fee Related DE69420981T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP01679593A JP3371151B2 (ja) 1993-01-08 1993-01-08 モノリシックマイクロウエーブ半導体集積回路
JP08564193A JP3250314B2 (ja) 1993-03-18 1993-03-18 マイクロ波半導体集積回路
JP6997693A JPH06283942A (ja) 1993-03-29 1993-03-29 化合物半導体より成る電界効果トランジスタのバイアス安定化回路

Publications (2)

Publication Number Publication Date
DE69420981D1 true DE69420981D1 (de) 1999-11-11
DE69420981T2 DE69420981T2 (de) 2000-04-06

Family

ID=27281565

Family Applications (3)

Application Number Title Priority Date Filing Date
DE69427311T Expired - Fee Related DE69427311T2 (de) 1993-01-08 1994-01-07 Vorspannungsstabilisierungsschaltung
DE69420981T Expired - Fee Related DE69420981T2 (de) 1993-01-08 1994-01-07 Integrierte monolithische Mikrowellenschaltung
DE69427378T Expired - Fee Related DE69427378T2 (de) 1993-01-08 1994-01-07 Monolithische integrierte Mikrowellenschaltung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69427311T Expired - Fee Related DE69427311T2 (de) 1993-01-08 1994-01-07 Vorspannungsstabilisierungsschaltung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69427378T Expired - Fee Related DE69427378T2 (de) 1993-01-08 1994-01-07 Monolithische integrierte Mikrowellenschaltung

Country Status (4)

Country Link
US (2) US5486787A (de)
EP (3) EP0854568B1 (de)
KR (1) KR100323775B1 (de)
DE (3) DE69427311T2 (de)

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KR100270581B1 (ko) * 1997-12-06 2000-11-01 정선종 바이어스 안정화 회로
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US7515896B1 (en) 1998-10-21 2009-04-07 Parkervision, Inc. Method and system for down-converting an electromagnetic signal, and transforms for same, and aperture relationships
US6061551A (en) 1998-10-21 2000-05-09 Parkervision, Inc. Method and system for down-converting electromagnetic signals
US7039372B1 (en) 1998-10-21 2006-05-02 Parkervision, Inc. Method and system for frequency up-conversion with modulation embodiments
US6370371B1 (en) 1998-10-21 2002-04-09 Parkervision, Inc. Applications of universal frequency translation
US7236754B2 (en) 1999-08-23 2007-06-26 Parkervision, Inc. Method and system for frequency up-conversion
US6813485B2 (en) * 1998-10-21 2004-11-02 Parkervision, Inc. Method and system for down-converting and up-converting an electromagnetic signal, and transforms for same
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WO2000046924A1 (en) * 1999-02-05 2000-08-10 Koninklijke Philips Electronics N.V. Driving a switching transistor
US6853690B1 (en) 1999-04-16 2005-02-08 Parkervision, Inc. Method, system and apparatus for balanced frequency up-conversion of a baseband signal and 4-phase receiver and transceiver embodiments
US6879817B1 (en) * 1999-04-16 2005-04-12 Parkervision, Inc. DC offset, re-radiation, and I/Q solutions using universal frequency translation technology
US7065162B1 (en) 1999-04-16 2006-06-20 Parkervision, Inc. Method and system for down-converting an electromagnetic signal, and transforms for same
US7693230B2 (en) 1999-04-16 2010-04-06 Parkervision, Inc. Apparatus and method of differential IQ frequency up-conversion
US7110444B1 (en) 1999-08-04 2006-09-19 Parkervision, Inc. Wireless local area network (WLAN) using universal frequency translation technology including multi-phase embodiments and circuit implementations
US8295406B1 (en) 1999-08-04 2012-10-23 Parkervision, Inc. Universal platform module for a plurality of communication protocols
US7010286B2 (en) 2000-04-14 2006-03-07 Parkervision, Inc. Apparatus, system, and method for down-converting and up-converting electromagnetic signals
US6414538B1 (en) * 2000-10-06 2002-07-02 Sun Microsystems, Inc. Circuit to reduce AC component of bias currents in high speed transistor logic circuits
JP3504227B2 (ja) * 2000-10-10 2004-03-08 シャープ株式会社 低雑音コンバータ
US6489827B1 (en) * 2000-10-30 2002-12-03 Marvell International, Ltd. Reduction of offset voltage in current mirror circuit
US7454453B2 (en) 2000-11-14 2008-11-18 Parkervision, Inc. Methods, systems, and computer program products for parallel correlation and applications thereof
US7010559B2 (en) * 2000-11-14 2006-03-07 Parkervision, Inc. Method and apparatus for a parallel correlator and applications thereof
US6452456B1 (en) * 2000-11-16 2002-09-17 Texas Instruments Incorporated Fast-setting, low power, jammer insensitive, biasing apparatus and method for single-ended circuits
JP2002328732A (ja) * 2001-05-07 2002-11-15 Texas Instr Japan Ltd 基準電圧発生回路
US7072427B2 (en) 2001-11-09 2006-07-04 Parkervision, Inc. Method and apparatus for reducing DC offsets in a communication system
US6452370B1 (en) * 2001-11-13 2002-09-17 Agilent Technologies, Inc. Low noise biasing technique
FR2836306B1 (fr) * 2002-02-15 2004-07-16 St Microelectronics Sa Transconducteur a-ab
US7321640B2 (en) * 2002-06-07 2008-01-22 Parkervision, Inc. Active polyphase inverter filter for quadrature signal generation
US7379883B2 (en) 2002-07-18 2008-05-27 Parkervision, Inc. Networking methods and systems
US7460584B2 (en) 2002-07-18 2008-12-02 Parkervision, Inc. Networking methods and systems
JP3902111B2 (ja) * 2002-10-21 2007-04-04 新日本無線株式会社 スイッチ半導体集積回路
WO2004040750A1 (en) * 2002-10-30 2004-05-13 Koninklijke Philips Electronics N.V. Amplifier bias circuit, method for biasing an amplifier and integrated circuit comprising an amplifier bias circuit
EP1528666A1 (de) * 2003-11-03 2005-05-04 TriQuint Semiconductor GmbH Leistungsverstärkerschaltungsanordnung und integrierte Schaltung
US6984853B2 (en) * 2004-02-26 2006-01-10 Agilent Technologies, Inc Integrated circuit with enhancement mode pseudomorphic high electron mobility transistors having on-chip electrostatic discharge protection
EP1794878A1 (de) 2004-09-27 2007-06-13 Nederlandse Organisatie voor Toegepast-Natuuurwetenschappelijk Onderzoek TNO Gate-bias-generator
JP2006180459A (ja) * 2004-11-29 2006-07-06 Renesas Technology Corp イコライザおよび半導体装置
US20070038560A1 (en) * 2005-08-12 2007-02-15 Carl Ansley Transaction payment system and processing
US20070235867A1 (en) * 2006-04-06 2007-10-11 Mokhtar Fuad B H Field effect transistor with interleaved layout
US7750687B2 (en) * 2006-10-11 2010-07-06 Infineon Technologies Ag Circuit arrangement comprising a level shifter and method
US7782127B2 (en) * 2008-01-25 2010-08-24 Broadcom Corporation Multi-mode reconstruction filter
KR101902558B1 (ko) 2010-07-02 2018-10-01 누보트로닉스, 인크. 3차원 마이크로구조체
JP5646360B2 (ja) * 2011-02-04 2014-12-24 株式会社東芝 半導体装置
JP6895087B2 (ja) 2018-03-19 2021-06-30 日本電信電話株式会社 分布ミキサ
CN111162743B (zh) * 2019-12-27 2024-01-16 季华实验室 误差放大器及开关电源
TWI743740B (zh) 2020-04-10 2021-10-21 立積電子股份有限公司 功率偵測器
WO2022101901A1 (en) * 2020-11-11 2022-05-19 Ariel Scientific Innovations Ltd. Current mirror circuit for enhancement mode wide bandgap semiconductor

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US4647841A (en) * 1985-10-21 1987-03-03 Motorola, Inc. Low voltage, high precision current source
US4645999A (en) * 1986-02-07 1987-02-24 National Semiconductor Corporation Current mirror transient speed up circuit
JPS63238716A (ja) * 1986-11-14 1988-10-04 Nec Corp スイッチ回路
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JP2753266B2 (ja) * 1988-06-20 1998-05-18 株式会社日立製作所 半導体回路
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Also Published As

Publication number Publication date
EP0854568A3 (de) 1998-08-12
DE69427378D1 (de) 2001-07-05
US5633610A (en) 1997-05-27
EP0606094A2 (de) 1994-07-13
EP0854570A2 (de) 1998-07-22
EP0854568B1 (de) 2001-05-30
EP0606094B1 (de) 1999-10-06
EP0606094A3 (de) 1995-06-28
US5486787A (en) 1996-01-23
DE69427378T2 (de) 2002-04-25
DE69420981T2 (de) 2000-04-06
KR100323775B1 (ko) 2002-06-20
EP0854570A3 (de) 1998-08-12
DE69427311T2 (de) 2001-11-22
EP0854568A2 (de) 1998-07-22
KR940019065A (ko) 1994-08-19
EP0854570B1 (de) 2001-05-23
DE69427311D1 (de) 2001-06-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee