KR100270581B1 - 바이어스 안정화 회로 - Google Patents
바이어스 안정화 회로 Download PDFInfo
- Publication number
- KR100270581B1 KR100270581B1 KR1019970066546A KR19970066546A KR100270581B1 KR 100270581 B1 KR100270581 B1 KR 100270581B1 KR 1019970066546 A KR1019970066546 A KR 1019970066546A KR 19970066546 A KR19970066546 A KR 19970066546A KR 100270581 B1 KR100270581 B1 KR 100270581B1
- Authority
- KR
- South Korea
- Prior art keywords
- transistor
- gate
- circuit
- voltage
- current
- Prior art date
Links
- 230000000087 stabilizing effect Effects 0.000 title abstract description 7
- 230000006641 stabilisation Effects 0.000 claims abstract description 23
- 238000011105 stabilization Methods 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims description 2
- 230000003321 amplification Effects 0.000 abstract description 9
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
- G05F3/247—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
- G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Electromagnetism (AREA)
- Nonlinear Science (AREA)
- Automation & Control Theory (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Amplifiers (AREA)
Abstract
Description
Claims (2)
- 증폭용 트랜지스터에 게이트 전압을 공급하기 위하여 기준 전압 발생용 트랜지스터를 이용한 게이트 전압 발생 회로를 구성하되,상기 기준 전압 발생용 트랜지스터의 드레인 단자와 상기 기준 전압 발생용 트랜지스터의 게이트 단자 간에 연결된 레벨 이동 회로와,기준 전류를 안정화 시키기 위하여 상기 기준 전압 발생용 트랜지스터의 드레인 단자와 전원 전압 단자 간에 공핍형 트랜지스터를 연결하되, 직렬 저항의 양쪽 끝을 상기 공핍형 트랜지스터의 소오스 단자와 게이트 단자에 각각 연결하여 구성한 정전류원 회로로 구성된 것을 특징으로 하는 바이어스 안정화 회로.
- 제 1 항에 있어서,상기 레벨 이동 회로는 드레인 단자가 전원 전압 단자에 연결되어 있는 드레인 접지형 트랜지스터 및 그 소오스 단자에 연결되어 있는 다수의 저항으로 구성된 전압 분배 회로가 기준 전압 발생용 드레인 단자에 궤환되게 연결되어 구성된 것을 특징으로 하는 바이어스 안정화 회로.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019970066546A KR100270581B1 (ko) | 1997-12-06 | 1997-12-06 | 바이어스 안정화 회로 |
US09/137,886 US6100753A (en) | 1997-12-06 | 1998-08-21 | Bias stabilization circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019970066546A KR100270581B1 (ko) | 1997-12-06 | 1997-12-06 | 바이어스 안정화 회로 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR19990047967A KR19990047967A (ko) | 1999-07-05 |
KR100270581B1 true KR100270581B1 (ko) | 2000-11-01 |
Family
ID=19526641
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019970066546A KR100270581B1 (ko) | 1997-12-06 | 1997-12-06 | 바이어스 안정화 회로 |
Country Status (2)
Country | Link |
---|---|
US (1) | US6100753A (ko) |
KR (1) | KR100270581B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100682056B1 (ko) | 2005-07-01 | 2007-02-15 | 삼성전자주식회사 | 버퍼 증폭기 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200624826A (en) * | 2004-10-29 | 2006-07-16 | Koninkl Philips Electronics Nv | System for diagnosing impedances having accurate current source and accurate voltage level-shift |
US9276656B2 (en) * | 2007-02-19 | 2016-03-01 | Corning Optical Communications Wireless Ltd | Method and system for improving uplink performance |
KR101400922B1 (ko) | 2010-11-08 | 2014-05-29 | 한국전자통신연구원 | 통신 시스템에서 증폭기, 및 그의 구동 장치 및 방법 |
US11658236B2 (en) * | 2019-05-07 | 2023-05-23 | Cambridge Gan Devices Limited | III-V semiconductor device with integrated power transistor and start-up circuit |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0854568B1 (en) * | 1993-01-08 | 2001-05-30 | Sony Corporation | Monolithic microwave integrated circuit |
US5506544A (en) * | 1995-04-10 | 1996-04-09 | Motorola, Inc. | Bias circuit for depletion mode field effect transistors |
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1997
- 1997-12-06 KR KR1019970066546A patent/KR100270581B1/ko not_active IP Right Cessation
-
1998
- 1998-08-21 US US09/137,886 patent/US6100753A/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100682056B1 (ko) | 2005-07-01 | 2007-02-15 | 삼성전자주식회사 | 버퍼 증폭기 |
Also Published As
Publication number | Publication date |
---|---|
KR19990047967A (ko) | 1999-07-05 |
US6100753A (en) | 2000-08-08 |
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