Classifications

• • G—PHYSICS
  • G06—COMPUTING; CALCULATING OR COUNTING
  • G06F—ELECTRIC DIGITAL DATA PROCESSING
  • G06F7/00—Methods or arrangements for processing data by operating upon the order or content of the data handled
  • G06F7/38—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation
  • G06F7/48—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using non-contact-making devices, e.g. tube, solid state device; using unspecified devices
  • G06F7/50—Adding; Subtracting
  • G06F7/501—Half or full adders, i.e. basic adder cells for one denomination
  • G06F7/502—Half adders; Full adders consisting of two cascaded half adders
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B82—NANOTECHNOLOGY
  • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
  • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
  • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
  • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
  • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
  • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
  • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
  • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
  • G11C11/409—Read-write [R-W] circuits 
  • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
  • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
  • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
  • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03K—PULSE TECHNIQUE
  • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
  • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
  • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
  • G11C2216/02—Structural aspects of erasable programmable read-only memories
  • G11C2216/08—Nonvolatile memory wherein data storage is accomplished by storing relatively few electrons in the storage layer, i.e. single electron memory

Landscapes

• Engineering & Computer Science (AREA)
• Physics & Mathematics (AREA)
• Computer Hardware Design (AREA)
• General Physics & Mathematics (AREA)
• Theoretical Computer Science (AREA)
• Power Engineering (AREA)
• Mathematical Physics (AREA)
• Nanotechnology (AREA)
• General Engineering & Computer Science (AREA)
• Pure & Applied Mathematics (AREA)
• Mathematical Analysis (AREA)
• Computational Mathematics (AREA)
• Computing Systems (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Chemical & Material Sciences (AREA)
• Crystallography & Structural Chemistry (AREA)
• Mathematical Optimization (AREA)
• Logic Circuits (AREA)
• Insulated Gate Type Field-Effect Transistor (AREA)
• Semiconductor Memories (AREA)

Applications Claiming Priority (1)

Publications (2)

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Family Applications (1)

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Families Citing this family (7)

• 1992
  • 1992-03-25 GB GB929206812A patent/GB9206812D0/en active Pending
• 1993
  • 1993-03-16 DE DE1993619361 patent/DE69319361T2/de not_active Expired - Fee Related
  • 1993-03-16 EP EP19930301982 patent/EP0562751B1/de not_active Expired - Lifetime
  • 1993-03-25 JP JP06701893A patent/JP3462524B2/ja not_active Expired - Fee Related

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