KR101193453B1 - 실리콘 카바이드 쇼트키 다이오드를 위한 몰리브덴 장벽 금속 및 제조방법 - Google Patents

실리콘 카바이드 쇼트키 다이오드를 위한 몰리브덴 장벽 금속 및 제조방법 Download PDF

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KR101193453B1
KR101193453B1 KR1020097002106A KR20097002106A KR101193453B1 KR 101193453 B1 KR101193453 B1 KR 101193453B1 KR 1020097002106 A KR1020097002106 A KR 1020097002106A KR 20097002106 A KR20097002106 A KR 20097002106A KR 101193453 B1 KR101193453 B1 KR 101193453B1
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layer
schottky
contact
molybdenum
epitaxial layer
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KR20090077751A (ko
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지오바니 리체리
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비쉐이-실리코닉스
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions

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  • Electrodes Of Semiconductors (AREA)
KR1020097002106A 2006-07-31 2007-07-31 실리콘 카바이드 쇼트키 다이오드를 위한 몰리브덴 장벽 금속 및 제조방법 Active KR101193453B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US82080706P 2006-07-31 2006-07-31
US60/820,807 2006-07-31
PCT/US2007/017135 WO2008016619A1 (en) 2006-07-31 2007-07-31 Molybdenum barrier metal for sic schottky diode and process of manufacture

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KR20090077751A KR20090077751A (ko) 2009-07-15
KR101193453B1 true KR101193453B1 (ko) 2012-10-24

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US (1) US9627552B2 (enExample)
EP (1) EP2047514A4 (enExample)
JP (2) JP2009545885A (enExample)
KR (1) KR101193453B1 (enExample)
CN (1) CN101506989B (enExample)
WO (1) WO2008016619A1 (enExample)

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CN106409663A (zh) * 2016-06-20 2017-02-15 中国工程物理研究院电子工程研究所 一种制备高阻断电压碳化硅功率器件的方法
CN109326523A (zh) * 2018-11-21 2019-02-12 中国电子科技集团公司第十三研究所 碳化硅肖特基接触的制备方法及碳化硅肖特基二极管
WO2022163081A1 (ja) 2021-02-01 2022-08-04 ローム株式会社 ＳｉＣ半導体装置
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