JP6065154B2 - 炭化珪素半導体装置 - Google Patents
炭化珪素半導体装置 Download PDFInfo
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- JP6065154B2 JP6065154B2 JP2016500009A JP2016500009A JP6065154B2 JP 6065154 B2 JP6065154 B2 JP 6065154B2 JP 2016500009 A JP2016500009 A JP 2016500009A JP 2016500009 A JP2016500009 A JP 2016500009A JP 6065154 B2 JP6065154 B2 JP 6065154B2
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 177
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 176
- 239000004065 semiconductor Substances 0.000 title claims description 155
- 230000002093 peripheral effect Effects 0.000 claims description 206
- 230000005684 electric field Effects 0.000 claims description 110
- 239000012535 impurity Substances 0.000 claims description 61
- 230000015556 catabolic process Effects 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 38
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- 230000001681 protective effect Effects 0.000 claims description 21
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010408 film Substances 0.000 description 110
- 239000010410 layer Substances 0.000 description 79
- 238000005530 etching Methods 0.000 description 22
- 238000004088 simulation Methods 0.000 description 18
- 230000003068 static effect Effects 0.000 description 15
- 230000004888 barrier function Effects 0.000 description 12
- 230000007423 decrease Effects 0.000 description 11
- 230000000694 effects Effects 0.000 description 9
- 239000003550 marker Substances 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 230000003111 delayed effect Effects 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 8
- 230000002829 reductive effect Effects 0.000 description 8
- 239000004642 Polyimide Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 229920001721 polyimide Polymers 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- -1 aluminum ions Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Description
まず、本発明の実施の形態1にかかる炭化珪素半導体装置100の構成を説明する。以下、第一導電型をN型とし第二導電型をP型とするN型のSiC−SBD(Silicon Carbide Schottky Barrier Diode)について例示して説明するが、第一導電型をP型とし第二導電型をN型とするP型の炭化珪素半導体装置でもよいし、SBDではなくPNダイオードやPiNダイオードであってもよい。
上述した実施の形態1においては、電極パッド5の張り出し幅を低減することでスイッチング時の電界緩和を図っていたが、更なる電界緩和を図るため、終端ウェル領域内にP型不純物濃度がより高い高濃度終端ウェル領域を設けることとしてもよい。そこで、実施の形態2として、高濃度終端ウェル領域を備えた炭化珪素半導体装置について、以下説明する。
上述した実施の形態1および2においてはダイオード素子であるSiC−SBDを例について説明を行ったが、本発明をスイッチング素子に適用することとしてもよい。そこで、実施の形態3としてスイッチング素子であるMOSFET(Metal Oxide Semiconductor Field Effect Transistor)に本発明を適用した場合について説明する。
Claims (10)
- 第一導電型の炭化珪素基板と、
前記炭化珪素基板の表面上に形成されたフィールド絶縁膜と、
前記炭化珪素基板の表面上であって前記フィールド絶縁膜よりも内周側に形成されるとともに、前記フィールド絶縁膜に乗り上げて形成された第一表面電極と、
前記第一表面電極を覆い、前記第一表面電極の外周端を越えて前記フィールド絶縁膜上に延在する第二表面電極と、
前記炭化珪素基板内の上部において前記第一表面電極の少なくとも一部と接して形成され、前記炭化珪素基板内において前記第二表面電極の外周端よりも外周側に延在する第二導電型の終端ウェル領域と、
前記第二表面電極の外周端を覆うように前記フィールド絶縁膜上および前記第二表面電極上に形成され、絶縁材料からなる表面保護膜と、
前記炭化珪素基板の裏面に形成された裏面電極とを備え、
dV/dtの値が10kV/μs以上のスイッチング時に前記第二表面電極の外周下端に印加される電界強度が前記フィールド絶縁膜又は前記表面保護膜の絶縁破壊強度のうち最も小さい絶縁破壊強度と等しくなると算出される場合の前記第二表面電極の外周端と前記フィールド絶縁膜の内周端との距離よりも、前記第二表面電極の外周端と前記フィールド絶縁膜の内周端との距離が小さい、
ことを特徴とする炭化珪素半導体装置。 - 前記フィールド絶縁膜は0.5μm〜3.0μmの厚さを有し、
前記炭化珪素基板は、第一導電型の不純物濃度が1.0×1014/cm3〜1.0×1016/cm3の第一導電型の炭化珪素半導体層を有し、
前記終端ウェル領域は、前記炭化珪素半導体層内に形成され、
前記終端ウェル領域内の第二導電型不純物のドーズ量が1.0×1013/cm2〜1.0×1014/cm2であり、
前記第二表面電極の外周端と前記フィールド絶縁膜の内周端との距離が100μm以下である、
ことを特徴とする請求項1記載の炭化珪素半導体装置。 - 前記第二表面電極の外周端と前記終端ウェル領域の外周端との距離が20μm以上である、
ことを特徴とする請求項1又は2記載の炭化珪素半導体装置。 - 前記終端ウェル領域内において、第二導電型のドーズ量が前記終端ウェル領域よりも高い第二導電型の高濃度終端ウェル領域を備える、
ことを特徴とする請求項1ないし3の記載のいずれか1項に記載の炭化珪素半導体装置。 - 前記高濃度終端ウェル領域上に前記第二表面電極の外周端が存在する、
ことを特徴とする請求項4記載の炭化珪素半導体装置。 - 前記終端ウェル領域の第二導電型不純物のドーズ量が2.0×1013/cm2〜5.0×1013/cm2である、
ことを特徴とする請求項1ないし5のいずれか1項に記載の炭化珪素半導体装置。 - 前記第二表面電極は、Al、Cu、Moの少なくともいずれか一つの金属を含む、
ことを特徴とする請求項1ないし6のいずれか1項に記載の炭化珪素半導体装置。 - 前記第一表面電極は、Ti、Mo、Ni、Au、Wの少なくともいずれか一つの金属を含む、
ことを特徴とする請求項1ないし7のいずれか1項に記載の炭化珪素半導体装置。 - 前記第二表面電極の外周端部には、テーパー部が設けられた、
ことを特徴とする請求項1ないし8のいずれか1項に記載の炭化珪素半導体装置。 - 前記炭化珪素基板内の上部であって、前記終端ウェル領域よりも外周側に形成された第二導電型のFLR領域を備えた、
ことを特徴とする請求項1ないし9のいずれか1項に記載の炭化珪素半導体装置。
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