JP6202944B2 - 炭化珪素半導体装置およびその製造方法 - Google Patents
炭化珪素半導体装置およびその製造方法 Download PDFInfo
- Publication number
- JP6202944B2 JP6202944B2 JP2013176954A JP2013176954A JP6202944B2 JP 6202944 B2 JP6202944 B2 JP 6202944B2 JP 2013176954 A JP2013176954 A JP 2013176954A JP 2013176954 A JP2013176954 A JP 2013176954A JP 6202944 B2 JP6202944 B2 JP 6202944B2
- Authority
- JP
- Japan
- Prior art keywords
- guard ring
- ring region
- silicon carbide
- insulating film
- field insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 44
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 44
- 239000004065 semiconductor Substances 0.000 title claims description 41
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 23
- 238000005530 etching Methods 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 239000012535 impurity Substances 0.000 claims description 9
- 230000005684 electric field Effects 0.000 description 13
- 230000007704 transition Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- 239000000470 constituent Substances 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- -1 aluminum ions Chemical class 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
Description
図1は本発明の実施の形態1に係る炭化珪素半導体装置のチップの構成を模式的に示す平面図(a)及びA−A断面図(b)である。ここでは炭化珪素基板1の上に、半導体素子としてSBDを備える例を示す。なお、説明の便宜上、図1(a)においては炭化珪素基板1の平面的な位置関係を理解するのに必要な構成要素だけが表示されているので、詳細は図1(b)を参照されたい。
図2は本発明の実施の形態2に係る炭化珪素半導体装置のチップの構成を模式的に示す断面図である。平面図は図1と同様なので省略した。本実施の形態では、ガードリング領域2の中に、その表面から形成され、ガードリング領域2より高い不純物濃度を有するp型の高濃度領域2aが形成されていることを特徴としている。その他の構成については、実施の形態1の構成と同様である。
図3は本発明の実施の形態3に係る炭化珪素半導体装置のチップの構成を模式的に示す断面図である。平面図は図1と同様なので省略した。本実施の形態では、フィールド絶縁膜3の開口部がテーパ形状となっていることを特徴としている。その他の構成については、実施の形態1の構成と同様である。
1a 基板層
1b ドリフト層
2 ガードリング領域
2a 高濃度領域
3 フィールド絶縁膜
4 ショットキー電極
4a エッチング残渣
5 表面電極パッド
6 保護膜
7 裏面電極
8 金属膜
9 レジスト膜
10 フィールドリミッティングリング
Claims (3)
- 第1導電型のドリフト層と、
前記ドリフト層の表面に形成された環状の第2導電型のガードリング領域と、
前記ドリフト層の表面上において、前記ガードリング領域を取り囲むように形成されたフィールド絶縁膜と、
前記ガードリング領域の内側において前記ドリフト層の表面を覆うように形成され、外周端が前記フィールド絶縁膜上に存在するショットキー電極と、
前記ショットキー電極上に形成され、前記ショットキー電極の外周端を越えて前記フィールド絶縁膜と接している表面電極パッドと、
を備え、
前記ガードリング領域は、前記ガードリング領域より高い不純物濃度を有する第2導電型の高濃度領域を前記表面電極パッド下に有し、
前記表面電極パッドの外周端は、前記ガードリング領域の上方に存在し、
前記ショットキー電極の外周端にはエッチング残渣が形成されており、
前記表面電極パッドは前記エッチング残渣を覆うように形成されていることを特徴とする炭化珪素半導体装置。 - 前記フィールド絶縁膜の開口部がテーパ形状となっていることを特徴とする請求項1に記載の炭化珪素半導体装置。
- 第1導電型の基板層と前記基板層上に形成された第1導電型のドリフト層を有する炭化珪素基板を用意する工程と、
前記ドリフト層の表面に第2導電型のガードリング領域を形成する工程と、
前記前記ドリフト層の表面上の一部おいて前記ガードリング領域を取り囲むようにフィールド絶縁膜を形成する工程と、
前記フィールド絶縁膜上と前記ドリフト層上とに金属膜を形成した後、ウェット処理により前記金属膜をエッチングすることで、外周端が前記フィールド絶縁膜上に存在するとともに前記外周端にエッチング残渣を有するショットキー電極を形成する工程と、
前記ショットキー電極上において、前記ショットキー電極の外周端を越えて前記フィールド絶縁膜と接し、前記エッチング残渣を覆うように表面電極パッドを形成する工程と
を備えた炭化珪素半導体装置の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013176954A JP6202944B2 (ja) | 2013-08-28 | 2013-08-28 | 炭化珪素半導体装置およびその製造方法 |
US14/290,253 US9184307B2 (en) | 2013-08-28 | 2014-05-29 | Silicon carbide semiconductor device |
KR20140100231A KR20150026812A (ko) | 2013-08-28 | 2014-08-05 | 탄화 규소 반도체장치 |
DE102014216989.5A DE102014216989A1 (de) | 2013-08-28 | 2014-08-26 | Siliziumcarbid-Halbleitervorrichtung |
CN201410432842.4A CN104425574B (zh) | 2013-08-28 | 2014-08-28 | 碳化硅半导体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013176954A JP6202944B2 (ja) | 2013-08-28 | 2013-08-28 | 炭化珪素半導体装置およびその製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017015060A Division JP6640131B2 (ja) | 2017-01-31 | 2017-01-31 | 炭化珪素半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015046500A JP2015046500A (ja) | 2015-03-12 |
JP6202944B2 true JP6202944B2 (ja) | 2017-09-27 |
Family
ID=52470724
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013176954A Active JP6202944B2 (ja) | 2013-08-28 | 2013-08-28 | 炭化珪素半導体装置およびその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9184307B2 (ja) |
JP (1) | JP6202944B2 (ja) |
KR (1) | KR20150026812A (ja) |
CN (1) | CN104425574B (ja) |
DE (1) | DE102014216989A1 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6065154B2 (ja) * | 2014-04-30 | 2017-01-25 | 三菱電機株式会社 | 炭化珪素半導体装置 |
JP6513339B2 (ja) * | 2014-04-30 | 2019-05-15 | 三菱電機株式会社 | 炭化珪素半導体装置 |
JP6319028B2 (ja) * | 2014-10-03 | 2018-05-09 | 三菱電機株式会社 | 半導体装置 |
JP6477106B2 (ja) * | 2015-03-24 | 2019-03-06 | サンケン電気株式会社 | 半導体装置 |
JP6241572B2 (ja) | 2015-04-14 | 2017-12-06 | 三菱電機株式会社 | 半導体装置 |
JP6719090B2 (ja) * | 2016-12-19 | 2020-07-08 | パナソニックIpマネジメント株式会社 | 半導体素子 |
JP6678810B2 (ja) * | 2017-02-24 | 2020-04-08 | 三菱電機株式会社 | 炭化珪素半導体装置および電力変換装置 |
JP6866326B2 (ja) * | 2018-03-19 | 2021-04-28 | 株式会社東芝 | 半導体装置 |
JP2020047679A (ja) * | 2018-09-14 | 2020-03-26 | 株式会社東芝 | 半導体装置 |
CN109786444A (zh) * | 2019-02-01 | 2019-05-21 | 芜湖启迪半导体有限公司 | 一种具有沟槽结终端碳化硅器件及其制造方法 |
CN113728441A (zh) * | 2019-04-19 | 2021-11-30 | 罗姆股份有限公司 | SiC半导体装置 |
JP7258668B2 (ja) | 2019-06-13 | 2023-04-17 | 三菱電機株式会社 | 半導体装置、及び、半導体装置の製造方法 |
JP2022140933A (ja) | 2021-03-15 | 2022-09-29 | 株式会社東芝 | 半導体装置 |
CN113990918B (zh) * | 2021-10-12 | 2023-10-20 | 山东大学 | 一种具有阶梯屏蔽环的垂直型ⅲ族氮化物功率半导体器件及其制备方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4476157A (en) | 1981-07-29 | 1984-10-09 | Tokyo Shibaura Denki Kabushiki Kaisha | Method for manufacturing schottky barrier diode |
JPS5827374A (ja) | 1981-08-10 | 1983-02-18 | Toshiba Corp | シヨツトキ−・バリヤ・ダイオ−ドとその製造方法 |
US4742377A (en) * | 1985-02-21 | 1988-05-03 | General Instrument Corporation | Schottky barrier device with doped composite guard ring |
JPS6229164A (ja) | 1985-07-29 | 1987-02-07 | Tdk Corp | シヨツトキ−バリア型半導体装置及びその製造方法 |
JPH02281757A (ja) * | 1989-04-24 | 1990-11-19 | Sony Corp | 半導体装置 |
JP2004127968A (ja) * | 2002-09-30 | 2004-04-22 | Sanyo Electric Co Ltd | 半導体装置およびその製造方法 |
JP4340757B2 (ja) * | 2002-11-25 | 2009-10-07 | 独立行政法人産業技術総合研究所 | 半導体装置 |
JP2005286197A (ja) | 2004-03-30 | 2005-10-13 | Shindengen Electric Mfg Co Ltd | 半導体装置およびその製造方法 |
JP4942134B2 (ja) | 2005-05-20 | 2012-05-30 | 日産自動車株式会社 | 炭化珪素半導体装置の製造方法 |
JP2007235064A (ja) * | 2006-03-03 | 2007-09-13 | Matsushita Electric Ind Co Ltd | ショットキーバリア半導体装置及びその製造方法 |
JP2008251772A (ja) | 2007-03-30 | 2008-10-16 | Toshiba Corp | 半導体装置 |
JP4512121B2 (ja) | 2007-07-27 | 2010-07-28 | 旭化成東光パワーデバイス株式会社 | ショットキーバリアダイオードの製造方法およびショットキーバリアダイオード |
JP5541842B2 (ja) * | 2008-03-18 | 2014-07-09 | 新電元工業株式会社 | 炭化珪素ショットキダイオード |
JP2012124268A (ja) | 2010-12-07 | 2012-06-28 | Nippon Inter Electronics Corp | 半導体装置 |
JP5406171B2 (ja) | 2010-12-08 | 2014-02-05 | ローム株式会社 | SiC半導体装置 |
TWM410990U (en) * | 2011-02-11 | 2011-09-01 | Pynmax Technology Co Ltd | High Antistatic capability schottky diode |
CN202067793U (zh) * | 2011-03-11 | 2011-12-07 | 璟茂科技股份有限公司 | 高抗静电能力的肖特基二极管 |
CN103534810B (zh) * | 2011-05-18 | 2017-05-17 | 罗姆股份有限公司 | 半导体装置及其制造方法 |
JP2013120822A (ja) * | 2011-12-07 | 2013-06-17 | Sumitomo Electric Ind Ltd | 半導体装置の製造方法 |
JP2013176954A (ja) | 2012-02-29 | 2013-09-09 | Sumitomo Chemical Co Ltd | 防眩フィルム製造用金型の製造方法および防眩フィルムの製造方法 |
JP5928101B2 (ja) * | 2012-03-30 | 2016-06-01 | 富士電機株式会社 | SiC半導体デバイスの製造方法 |
-
2013
- 2013-08-28 JP JP2013176954A patent/JP6202944B2/ja active Active
-
2014
- 2014-05-29 US US14/290,253 patent/US9184307B2/en active Active
- 2014-08-05 KR KR20140100231A patent/KR20150026812A/ko not_active Application Discontinuation
- 2014-08-26 DE DE102014216989.5A patent/DE102014216989A1/de active Granted
- 2014-08-28 CN CN201410432842.4A patent/CN104425574B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
KR20150026812A (ko) | 2015-03-11 |
DE102014216989A1 (de) | 2015-03-05 |
CN104425574A (zh) | 2015-03-18 |
JP2015046500A (ja) | 2015-03-12 |
US20150060882A1 (en) | 2015-03-05 |
CN104425574B (zh) | 2018-09-11 |
US9184307B2 (en) | 2015-11-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6202944B2 (ja) | 炭化珪素半導体装置およびその製造方法 | |
JP6241572B2 (ja) | 半導体装置 | |
JP6065154B2 (ja) | 炭化珪素半導体装置 | |
JP6745458B2 (ja) | 半導体素子 | |
JP7113220B2 (ja) | 半導体素子およびその製造方法 | |
JP6513339B2 (ja) | 炭化珪素半導体装置 | |
JP6641488B2 (ja) | 半導体装置 | |
JP6010773B2 (ja) | 半導体素子及びその製造方法 | |
JP2009267032A (ja) | 半導体装置とその製造方法 | |
JP2013239607A (ja) | 半導体装置 | |
CN108735720B (zh) | 半导体元件 | |
JP5943819B2 (ja) | 半導体素子、半導体装置 | |
JP2017201683A (ja) | 半導体素子 | |
JP5943846B2 (ja) | 炭化珪素半導体装置及びその製造方法 | |
JP2012248736A (ja) | 半導体装置 | |
JP6640131B2 (ja) | 炭化珪素半導体装置およびその製造方法 | |
JP6919713B2 (ja) | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 | |
EP3010045A1 (en) | Semiconductor device and a method of manufacturing same | |
JP2014130913A (ja) | 半導体装置及びその駆動方法 | |
JP6233537B2 (ja) | 半導体装置および半導体装置の製造方法 | |
JP3879697B2 (ja) | 半導体装置 | |
WO2017149743A1 (ja) | ワイドギャップ型半導体装置 | |
JP2013152982A (ja) | 半導体装置及びこれを備えた半導体モジュール | |
JP6183234B2 (ja) | 半導体装置および半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD01 | Notification of change of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7421 Effective date: 20140326 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20151224 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160726 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160923 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20161101 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170131 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20170208 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20170317 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170829 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6202944 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |