JP6319028B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6319028B2 JP6319028B2 JP2014204754A JP2014204754A JP6319028B2 JP 6319028 B2 JP6319028 B2 JP 6319028B2 JP 2014204754 A JP2014204754 A JP 2014204754A JP 2014204754 A JP2014204754 A JP 2014204754A JP 6319028 B2 JP6319028 B2 JP 6319028B2
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- semiconductor
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- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims description 102
- 239000000758 substrate Substances 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 230000007797 corrosion Effects 0.000 description 8
- 238000005260 corrosion Methods 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 230000005669 field effect Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/564—Details not otherwise provided for, e.g. protection against moisture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19042—Component type being an inductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19102—Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device
- H01L2924/19104—Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device on the semiconductor or solid-state device, i.e. passive-on-chip
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Junction Field-Effect Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Description
図1は、本発明の実施の形態1に係る半導体装置を示す断面図である。図2は、本発明の実施の形態1に係る半導体装置を示す平面図である。半導体基板1はSi基板、GaAs基板、InP基板、SiC基板、GaN基板の何れか1つであり、所定のトランジスタ動作をするための半導体の多層膜構造を有する。
図4は、本発明の実施の形態2に係る半導体装置を示す断面図である。図5は、本発明の実施の形態2に係る半導体装置を示す平面図である。図6は、本発明の実施の形態2に係る半導体装置がパッケージに実装された状態を示す断面図である。
Claims (6)
- 主面を有する半導体基板と、
前記半導体基板の前記主面上に設けられた半導体素子と、
前記半導体基板の前記主面上に直接的に設けられ、前記半導体素子に直接的に接続された電極パッドと、
前記半導体素子及び前記電極パッドを取り囲んで前記半導体基板の前記主面上に直接的に設けられたガードリングと、
前記ガードリングの内側で前記半導体基板の一部と前記半導体素子の全体を覆い、前記ガードリング及び前記ガードリングの外側の前記半導体基板の一部を覆う絶縁膜とを備え、
前記絶縁膜は水分を通さない材料からなり、前記半導体素子及び前記電極パッドが設けられていない領域において前記半導体基板の前記主面及び前記ガードリングに直接的に接していることを特徴とする半導体装置。 - 前記ガードリングは導電性の半導体からなり、
前記絶縁膜は前記ガードリングを全て覆うことを特徴とする請求項1に記載の半導体装置。 - 前記ガードリングは金属からなることを特徴とする請求項1に記載の半導体装置。
- 前記絶縁膜は前記ガードリングを覆い、前記ガードリング上の前記絶縁膜の一部が開口されていることを特徴とする請求項3に記載の半導体装置。
- 前記半導体素子は受動素子を有することを特徴とする請求項1〜4の何れか1項に記載の半導体装置。
- 前記半導体基板はSi基板、GaAs基板、InP基板、SiC基板、GaN基板の何れか1つであることを特徴とする請求項1〜5の何れか1項に記載の半導体装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014204754A JP6319028B2 (ja) | 2014-10-03 | 2014-10-03 | 半導体装置 |
TW104121062A TWI567907B (zh) | 2014-10-03 | 2015-06-30 | 半導體裝置 |
US14/796,674 US10242928B2 (en) | 2014-10-03 | 2015-07-10 | Semiconductor device |
DE102015215648.6A DE102015215648A1 (de) | 2014-10-03 | 2015-08-17 | Halbleitervorrichtung |
CN201510640745.9A CN105489567B (zh) | 2014-10-03 | 2015-09-30 | 半导体装置 |
US15/220,424 US9741634B2 (en) | 2014-10-03 | 2016-07-27 | Semiconductor device |
US15/647,960 US10147661B2 (en) | 2014-10-03 | 2017-07-12 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014204754A JP6319028B2 (ja) | 2014-10-03 | 2014-10-03 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2016076545A JP2016076545A (ja) | 2016-05-12 |
JP6319028B2 true JP6319028B2 (ja) | 2018-05-09 |
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JP2014204754A Active JP6319028B2 (ja) | 2014-10-03 | 2014-10-03 | 半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (3) | US10242928B2 (ja) |
JP (1) | JP6319028B2 (ja) |
CN (1) | CN105489567B (ja) |
DE (1) | DE102015215648A1 (ja) |
TW (1) | TWI567907B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6319028B2 (ja) * | 2014-10-03 | 2018-05-09 | 三菱電機株式会社 | 半導体装置 |
JP6594770B2 (ja) * | 2015-12-25 | 2019-10-23 | スズキ株式会社 | 車両用シートフレーム構造 |
US11309412B1 (en) * | 2017-05-17 | 2022-04-19 | Northrop Grumman Systems Corporation | Shifting the pinch-off voltage of an InP high electron mobility transistor with a metal ring |
CN113410214B (zh) * | 2021-05-27 | 2022-04-19 | 深圳市时代速信科技有限公司 | 一种半导体器件结构及其制造方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02275656A (ja) | 1989-04-17 | 1990-11-09 | Nec Corp | 樹脂封止型半導体装置 |
JP2558932B2 (ja) * | 1990-07-24 | 1996-11-27 | 松下電器産業株式会社 | 化合物半導体集積回路 |
FR2816113A1 (fr) * | 2000-10-31 | 2002-05-03 | St Microelectronics Sa | Procede de realisation d'une zone dopee dans du carbure de silicium et application a une diode schottky |
JP4041660B2 (ja) | 2001-05-31 | 2008-01-30 | ユーディナデバイス株式会社 | 半導体装置及びその製造方法 |
JP4659355B2 (ja) * | 2003-12-11 | 2011-03-30 | 富士通セミコンダクター株式会社 | 半導体装置およびその製造方法 |
US7476918B2 (en) * | 2004-11-22 | 2009-01-13 | Panasonic Corporation | Semiconductor integrated circuit device and vehicle-mounted radar system using the same |
WO2007074530A1 (ja) * | 2005-12-27 | 2007-07-05 | Fujitsu Limited | 半導体装置 |
JP2008227116A (ja) * | 2007-03-13 | 2008-09-25 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP5319084B2 (ja) * | 2007-06-19 | 2013-10-16 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP4873001B2 (ja) * | 2008-12-10 | 2012-02-08 | ソニー株式会社 | 固体撮像装置とその製造方法、電子機器並びに半導体装置 |
JP5439901B2 (ja) * | 2009-03-31 | 2014-03-12 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
WO2011024367A1 (ja) * | 2009-08-27 | 2011-03-03 | パナソニック株式会社 | 窒化物半導体装置 |
US8513764B2 (en) * | 2011-02-18 | 2013-08-20 | X-Fab Semiconductor Foundries Ag | Schottky diode |
US8772901B2 (en) * | 2011-11-11 | 2014-07-08 | Alpha And Omega Semiconductor Incorporated | Termination structure for gallium nitride schottky diode |
JP6181407B2 (ja) | 2013-04-10 | 2017-08-16 | ユニ・チャーム株式会社 | 使い捨ておむつ |
JP6202944B2 (ja) * | 2013-08-28 | 2017-09-27 | 三菱電機株式会社 | 炭化珪素半導体装置およびその製造方法 |
US9362198B2 (en) * | 2014-04-10 | 2016-06-07 | Freescale Semiconductor, Inc. | Semiconductor devices with a thermally conductive layer and methods of their fabrication |
JP6319028B2 (ja) * | 2014-10-03 | 2018-05-09 | 三菱電機株式会社 | 半導体装置 |
-
2014
- 2014-10-03 JP JP2014204754A patent/JP6319028B2/ja active Active
-
2015
- 2015-06-30 TW TW104121062A patent/TWI567907B/zh active
- 2015-07-10 US US14/796,674 patent/US10242928B2/en active Active
- 2015-08-17 DE DE102015215648.6A patent/DE102015215648A1/de active Pending
- 2015-09-30 CN CN201510640745.9A patent/CN105489567B/zh active Active
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2016
- 2016-07-27 US US15/220,424 patent/US9741634B2/en active Active
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2017
- 2017-07-12 US US15/647,960 patent/US10147661B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20170309535A1 (en) | 2017-10-26 |
TW201614790A (en) | 2016-04-16 |
US10147661B2 (en) | 2018-12-04 |
US20160336250A1 (en) | 2016-11-17 |
JP2016076545A (ja) | 2016-05-12 |
CN105489567A (zh) | 2016-04-13 |
DE102015215648A1 (de) | 2016-04-07 |
US10242928B2 (en) | 2019-03-26 |
TWI567907B (zh) | 2017-01-21 |
US20160099193A1 (en) | 2016-04-07 |
CN105489567B (zh) | 2018-07-06 |
US9741634B2 (en) | 2017-08-22 |
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