JPWO2020235690A1 - - Google Patents

Info

Publication number
JPWO2020235690A1
JPWO2020235690A1 JP2021520885A JP2021520885A JPWO2020235690A1 JP WO2020235690 A1 JPWO2020235690 A1 JP WO2020235690A1 JP 2021520885 A JP2021520885 A JP 2021520885A JP 2021520885 A JP2021520885 A JP 2021520885A JP WO2020235690 A1 JPWO2020235690 A1 JP WO2020235690A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2021520885A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2020235690A1 publication Critical patent/JPWO2020235690A1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2021520885A 2019-05-23 2020-05-22 Pending JPWO2020235690A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019097158 2019-05-23
PCT/JP2020/020428 WO2020235690A1 (ja) 2019-05-23 2020-05-22 半導体装置

Publications (1)

Publication Number Publication Date
JPWO2020235690A1 true JPWO2020235690A1 (ja) 2020-11-26

Family

ID=73459121

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021520885A Pending JPWO2020235690A1 (ja) 2019-05-23 2020-05-22

Country Status (4)

Country Link
US (1) US20220223737A1 (ja)
JP (1) JPWO2020235690A1 (ja)
CN (1) CN114144889A (ja)
WO (1) WO2020235690A1 (ja)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6194779B2 (ja) * 2013-12-09 2017-09-13 富士電機株式会社 半導体装置および半導体装置の製造方法
JP6149786B2 (ja) * 2014-04-11 2017-06-21 豊田合成株式会社 半導体装置および半導体装置の製造方法
WO2015166608A1 (ja) * 2014-04-30 2015-11-05 三菱電機株式会社 炭化珪素半導体装置
US9590050B2 (en) * 2014-05-08 2017-03-07 Flosfia, Inc. Crystalline multilayer structure and semiconductor device
JP6230196B2 (ja) * 2014-07-08 2017-11-15 株式会社Flosfia 結晶性半導体膜および半導体装置
US10439028B2 (en) * 2014-07-22 2019-10-08 Flosfia, Inc. Crystalline semiconductor film, plate-like body and semiconductor device
JP2017118039A (ja) * 2015-12-25 2017-06-29 出光興産株式会社 積層体、半導体素子及び電気機器
JP6763703B2 (ja) * 2016-06-17 2020-09-30 ラピスセミコンダクタ株式会社 半導体装置および半導体装置の製造方法
JP6904517B2 (ja) * 2016-06-30 2021-07-14 株式会社Flosfia 結晶性酸化物半導体膜およびその製造方法

Also Published As

Publication number Publication date
CN114144889A (zh) 2022-03-04
WO2020235690A1 (ja) 2020-11-26
US20220223737A1 (en) 2022-07-14

Similar Documents

Publication Publication Date Title
BR112019017762A2 (ja)
BR112021017339A2 (ja)
BR112021013854A2 (ja)
BR112021017939A2 (ja)
BR112021017892A2 (ja)
BR112019016141A2 (ja)
BR112021017738A2 (ja)
BR112021017782A2 (ja)
BR112019016138A2 (ja)
BR112019016142A2 (ja)
BR112021018168A2 (ja)
BR112021017728A2 (ja)
AU2020104490A5 (ja)
BR112021008711A2 (ja)
BR112021017234A2 (ja)
BR112021017355A2 (ja)
BR112021017703A2 (ja)
BR112021017173A2 (ja)
BR112021018102A2 (ja)
BR112021017083A2 (ja)
BR112021017637A2 (ja)
BR112021015080A2 (ja)
BR112021012348A2 (ja)
BR112021018084A2 (ja)
BR112021018093A2 (ja)

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230512