JP6763703B2 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- JP6763703B2 JP6763703B2 JP2016121190A JP2016121190A JP6763703B2 JP 6763703 B2 JP6763703 B2 JP 6763703B2 JP 2016121190 A JP2016121190 A JP 2016121190A JP 2016121190 A JP2016121190 A JP 2016121190A JP 6763703 B2 JP6763703 B2 JP 6763703B2
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- 239000004065 semiconductor Substances 0.000 title claims description 270
- 238000004519 manufacturing process Methods 0.000 title claims description 55
- 238000000034 method Methods 0.000 title claims description 55
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 148
- 229910052710 silicon Inorganic materials 0.000 claims description 148
- 239000010703 silicon Substances 0.000 claims description 148
- 239000000758 substrate Substances 0.000 claims description 85
- 229910052594 sapphire Inorganic materials 0.000 claims description 58
- 239000010980 sapphire Substances 0.000 claims description 58
- 238000005530 etching Methods 0.000 claims description 26
- 239000012212 insulator Substances 0.000 claims description 24
- 239000013078 crystal Substances 0.000 claims description 22
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 14
- 239000012528 membrane Substances 0.000 claims description 8
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 230000005669 field effect Effects 0.000 claims description 4
- 238000001514 detection method Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 description 177
- 239000010410 layer Substances 0.000 description 151
- 238000005229 chemical vapour deposition Methods 0.000 description 23
- 229910004298 SiO 2 Inorganic materials 0.000 description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- 229910052814 silicon oxide Inorganic materials 0.000 description 20
- 239000010936 titanium Substances 0.000 description 19
- 239000000463 material Substances 0.000 description 17
- 229910052581 Si3N4 Inorganic materials 0.000 description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 15
- 238000000926 separation method Methods 0.000 description 14
- 238000000206 photolithography Methods 0.000 description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 12
- 229920005591 polysilicon Polymers 0.000 description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 11
- 239000012535 impurity Substances 0.000 description 11
- 239000003595 mist Substances 0.000 description 11
- 229910052719 titanium Inorganic materials 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 8
- 229910052593 corundum Inorganic materials 0.000 description 8
- 239000010431 corundum Substances 0.000 description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 8
- 229910052721 tungsten Inorganic materials 0.000 description 8
- 239000010937 tungsten Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000002344 surface layer Substances 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 208000032368 Device malfunction Diseases 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
- H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
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- H01L31/02016—Circuit arrangements of general character for the devices
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Description
図1は、本発明の実施形態に係る半導体装置1の構成を示す断面図である。半導体装置1は、サファイヤ基板10上の第1の領域R1に設けられたシリコン層20と、サファイヤ基板10上の第1の領域R1に隣接する第2の領域R2に設けられた酸化物半導体層30とを有する。シリコン層20は、主としてシリコンで構成されており、酸化物半導体層30は、主として酸化物半導体で構成されている。
上記の第1の実施形態に係る半導体装置の製造方法は、ストッパー膜501および犠牲膜502を用いたリフトオフ法によりシリコン層20を覆う第1の絶縁膜208上に堆積した酸化物半導体Xを除去する工程を含むものであった。これに対し、本発明の第2の実施形態に係る製造方法は、シリコン層20を覆う第1の絶縁膜208上への酸化物半導体Xの堆積を抑制するための工程を含む。
図11Aおよび図11Bは、それぞれ、本発明の第3の実施形態に係る半導体装置2の構成を示す平面図及び断面図である。半導体装置2は、サファイヤ基板10上の第1の領域R1においてシリコン層20に形成されるシリコンデバイスとして、集積回路600および第1の受光素子601を含む。また、半導体装置2は、サファイヤ基板10上の第2の領域R2において酸化物半導体層30に形成される酸化物半導体デバイスとして、第2の受光素子602を含む。
10 サファイヤ基板
20 シリコン層
30 酸化物半導体層
40 絶縁分離膜
51、52 配線
200 シリコンデバイス
220 制御回路
230 露出部
300 酸化物半導体デバイス
300a MESFET
300b SBD
300c MOSFET
330 パワートランジスタ
601 第1の受光素子
602 第2の受光素子
R1 第1の領域
R2 第2の領域
Claims (14)
- コランダム型の結晶構造を有する基板と、
前記基板の表面の第1の領域に設けられたシリコン層と、
前記基板の表面の前記第1の領域に隣接する第2の領域に設けられたコランダム型の結晶構造を有する酸化物半導体層と、
前記第1の領域において、前記酸化物半導体層を構成する酸化物半導体と同一の酸化物半導体が前記基板上に堆積したダミー部と、
を含む半導体装置。 - 前記基板はサファイヤ基板であり、
前記酸化物半導体層は、酸化ガリウムを含む
請求項1に記載の半導体装置。 - 前記シリコン層と前記酸化物半導体層とは、絶縁体を介して接している
請求項1または請求項2に記載の半導体装置。 - 前記シリコン層に形成されたシリコンデバイスと、
前記酸化物半導体層に形成された酸化物半導体デバイスと、
前記シリコンデバイスと前記酸化物半導体デバイスとを接続する配線と、を
を含む
請求項1から請求項3のいずれか1項に記載の半導体装置。 - 前記シリコンデバイスは、前記酸化物半導体デバイスを制御する制御回路を構成する
請求項4に記載の半導体装置。 - 前記酸化物半導体デバイスは、前記酸化物半導体層との間でショットキー接合を形成するゲートを含む電界効果トランジスタである
請求項4または請求項5に記載の半導体装置。 - 前記酸化物半導体デバイスは、絶縁膜を間に挟んで前記酸化物半導体層の表面に設けられたゲートを含む電界効果トランジスタである
請求項4または請求項5に記載の半導体装置。 - 前記シリコン層に設けられた複数のシリコンデバイスを含み、
前記シリコンデバイス同士の間の領域に前記ダミー部が設けられている
請求項1から請求項7のいずれか1項に記載の半導体装置。 - 前記シリコン層に形成された第1の受光素子と、
前記酸化物半導体層に形成された第2の受光素子と、
を含む
請求項1から請求項3のいずれか1項に記載の半導体装置。 - 前記シリコン層に形成され且つ前記第1の受光素子によって生成された光電流および前記第2の受光素子によって生成された光電流を検出する検出回路を更に含む
請求項9に記載の半導体装置。 - コランダム型の結晶構造を有する基板の表面に設けられたシリコン層の第1の領域にシリコンデバイスを形成する工程と、
前記シリコン層の前記第1の領域に隣接する第2の領域を除去して前記基板の表面を部分的に露出させる工程と、
前記基板の露出部分にコランダム型の結晶構造を有する酸化物半導体層を形成する工程と、
前記酸化物半導体層に酸化物半導体デバイスを形成する工程と、
前記酸化物半導体層を形成する前に、前記シリコン層の前記第1の領域内に前記基板の表面を部分的に露出させた露出部を形成する工程と、
前記基板の露出部に前記酸化物半導体層を構成する酸化物半導体と同一の酸化物半導体を堆積してダミー部を形成する工程と、
を含む
半導体装置の製造方法。 - 前記シリコンデバイスと前記酸化物半導体デバイスとを配線で接続する工程をさらに含む
請求項11に記載の半導体装置の製造方法。 - 前記酸化物半導体層を形成する前に、前記シリコン層を覆う少なくとも1層からなる膜を形成する工程と、
前記酸化物半導体層を形成した後に、前記膜を除去する工程と、
を含む請求項11または請求項12に記載の製造方法。 - 前記膜は、ストッパー膜および犠牲膜を含んで構成され、
前記膜を除去する工程は、前記犠牲膜をエッチングする第1のエッチング工程と、前記ストッパー膜をエッチングする第2の工程とを含み、
前記ストッパー膜は、前記犠牲膜のエッチングに用いられるエッチャントに対するエッチングレートが前記犠牲膜よりも低い
請求項13に記載の製造方法。
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