JP2017224794A - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
- Publication number
- JP2017224794A JP2017224794A JP2016121190A JP2016121190A JP2017224794A JP 2017224794 A JP2017224794 A JP 2017224794A JP 2016121190 A JP2016121190 A JP 2016121190A JP 2016121190 A JP2016121190 A JP 2016121190A JP 2017224794 A JP2017224794 A JP 2017224794A
- Authority
- JP
- Japan
- Prior art keywords
- oxide semiconductor
- semiconductor device
- silicon
- layer
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 268
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 57
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 151
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 151
- 239000010703 silicon Substances 0.000 claims abstract description 151
- 239000000758 substrate Substances 0.000 claims abstract description 84
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 59
- 239000010980 sapphire Substances 0.000 claims abstract description 59
- 238000000034 method Methods 0.000 claims description 72
- 238000005530 etching Methods 0.000 claims description 25
- 239000012212 insulator Substances 0.000 claims description 25
- 239000013078 crystal Substances 0.000 claims description 16
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 14
- 229910052593 corundum Inorganic materials 0.000 claims description 8
- 239000010431 corundum Substances 0.000 claims description 8
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 6
- 230000005669 field effect Effects 0.000 claims description 4
- 238000001514 detection method Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 description 186
- 239000010410 layer Substances 0.000 description 148
- 238000005229 chemical vapour deposition Methods 0.000 description 23
- 229910004298 SiO 2 Inorganic materials 0.000 description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- 229910052814 silicon oxide Inorganic materials 0.000 description 20
- 239000010936 titanium Substances 0.000 description 19
- 239000000463 material Substances 0.000 description 17
- 229910052581 Si3N4 Inorganic materials 0.000 description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 12
- 238000000206 photolithography Methods 0.000 description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 12
- 229920005591 polysilicon Polymers 0.000 description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 11
- 239000012535 impurity Substances 0.000 description 11
- 239000003595 mist Substances 0.000 description 11
- 229910052719 titanium Inorganic materials 0.000 description 11
- 230000008569 process Effects 0.000 description 9
- 238000000926 separation method Methods 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 8
- 229910052721 tungsten Inorganic materials 0.000 description 8
- 239000010937 tungsten Substances 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000002344 surface layer Substances 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- 208000022010 Lhermitte-Duclos disease Diseases 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 208000032368 Device malfunction Diseases 0.000 description 1
- 244000126211 Hericium coralloides Species 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
- H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Junction Field-Effect Transistors (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
図1は、本発明の実施形態に係る半導体装置1の構成を示す断面図である。半導体装置1は、サファイヤ基板10上の第1の領域R1に設けられたシリコン層20と、サファイヤ基板10上の第1の領域R1に隣接する第2の領域R2に設けられた酸化物半導体層30とを有する。シリコン層20は、主としてシリコンで構成されており、酸化物半導体層30は、主として酸化物半導体で構成されている。
上記の第1の実施形態に係る半導体装置の製造方法は、ストッパー膜501および犠牲膜502を用いたリフトオフ法によりシリコン層20を覆う第1の絶縁膜208上に堆積した酸化物半導体Xを除去する工程を含むものであった。これに対し、本発明の第2の実施形態に係る製造方法は、シリコン層20を覆う第1の絶縁膜208上への酸化物半導体Xの堆積を抑制するための工程を含む。
図11Aおよび図11Bは、それぞれ、本発明の第3の実施形態に係る半導体装置2の構成を示す平面図及び断面図である。半導体装置2は、サファイヤ基板10上の第1の領域R1においてシリコン層20に形成されるシリコンデバイスとして、集積回路600および第1の受光素子601を含む。また、半導体装置2は、サファイヤ基板10上の第2の領域R2において酸化物半導体層30に形成される酸化物半導体デバイスとして、第2の受光素子602を含む。
10 サファイヤ基板
20 シリコン層
30 酸化物半導体層
40 絶縁分離膜
51、52 配線
200 シリコンデバイス
220 制御回路
230 露出部
300 酸化物半導体デバイス
300a MESFET
300b SBD
300c MOSFET
330 パワートランジスタ
601 第1の受光素子
602 第2の受光素子
R1 第1の領域
R2 第2の領域
Claims (17)
- 基板と、
前記基板の表面の第1の領域に設けられたシリコン層と、
前記基板の表面の前記第1の領域に隣接する第2の領域に設けられた酸化物半導体層と、
を含む半導体装置。 - 前記基板および前記酸化物半導体層はコランダム型の結晶構造を有する
請求項1に記載の半導体装置。 - 前記基板はサファイヤ基板であり、
前記酸化物半導体層は、酸化ガリウムを含む
請求項2に記載の半導体装置。 - 前記シリコン層と前記酸化物半導体層とは、絶縁体を介して接している
請求項1から請求項3のいずれか1項に記載の半導体装置。 - 前記シリコン層に形成されたシリコンデバイスと、
前記酸化物半導体層に形成された酸化物半導体デバイスと、
前記シリコンデバイスと前記酸化物半導体デバイスとを接続する配線と、を
を含む
請求項1から請求項4のいずれか1項に記載の半導体装置。 - 前記シリコンデバイスは、前記酸化物半導体デバイスを制御する制御回路を構成する
請求項5に記載の半導体装置。 - 前記酸化物半導体デバイスは、前記酸化物半導体層との間でショットキー接合を形成するゲートを含む電界効果トランジスタである
請求項5または請求項6に記載の半導体装置。 - 前記酸化物半導体デバイスは、絶縁膜を間に挟んで前記酸化物半導体層の表面に設けられたゲートを含む電界効果トランジスタである
請求項5または請求項6に記載の半導体装置。 - 前記第1の領域において、前記酸化物半導体層を構成する酸化物半導体と同一の酸化物半導体が前記基板上に堆積したダミー部を有する
請求項1から請求項8のいずれか1項に記載の半導体装置。 - 前記シリコン層に設けられた複数のシリコンデバイスを含み、
前記シリコンデバイス同士の間の領域に前記ダミー部が設けられている
請求項9に記載の半導体装置。 - 前記シリコン層に形成された第1の受光素子と、
前記酸化物半導体層に形成された第2の受光素子と、
を含む
請求項1から請求項4のいずれか1項に記載の半導体装置。 - 前記シリコン層に形成され且つ前記第1の受光素子によって生成された光電流および前記第2の受光素子によって生成された光電流を検出する検出回路を更に含む
請求項11に記載の半導体装置。 - 基板の表面に設けられたシリコン層の第1の領域にシリコンデバイスを形成する工程と、
前記シリコン層の前記第1の領域に隣接する第2の領域を除去して前記基板の表面を部分的に露出させる工程と、
前記基板の露出部分に酸化物半導体層を形成する工程と、
前記酸化物半導体層に酸化物半導体デバイスを形成する工程と、
を含む
半導体装置の製造方法。 - 前記シリコンデバイスと前記酸化物半導体デバイスとを配線で接続する工程をさらに含む
請求項13に記載の半導体装置の製造方法。 - 前記酸化物半導体層を形成する前に、前記シリコン層の前記第1の領域内に前記基板の表面を部分的に露出させた露出部を形成する工程を更に含む
請求項13または請求項14に記載の製造方法。 - 前記酸化物半導体層を形成する前に、前記シリコン層を覆う少なくとも1層からなる膜を形成する工程と、
前記酸化物半導体層を形成した後に、前記膜を除去する工程と、
を含む請求項13から請求項15のいずれか1項に記載の製造方法。 - 前記膜は、ストッパー膜および犠牲膜を含んで構成され、
前記膜を除去する工程は、前記犠牲膜をエッチングする第1のエッチング工程と、前記犠牲膜をエッチングする第2の工程とを含み、
前記ストッパー膜は、前記犠牲膜のエッチングに用いられるエッチャントに対するエッチングレートが前記犠牲膜よりも低い
請求項16に記載の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016121190A JP6763703B2 (ja) | 2016-06-17 | 2016-06-17 | 半導体装置および半導体装置の製造方法 |
US15/624,617 US10497726B2 (en) | 2016-06-17 | 2017-06-15 | Semiconductor device having silicon devices in a silicon layer and oxide semiconductor devices in an oxide semiconductor layer of a same chip and semiconductor device manufacturing method |
CN201710456077.3A CN107527922B (zh) | 2016-06-17 | 2017-06-16 | 半导体装置以及半导体装置的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016121190A JP6763703B2 (ja) | 2016-06-17 | 2016-06-17 | 半導体装置および半導体装置の製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020152342A Division JP7081889B2 (ja) | 2020-09-10 | 2020-09-10 | 半導体装置および半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017224794A true JP2017224794A (ja) | 2017-12-21 |
JP6763703B2 JP6763703B2 (ja) | 2020-09-30 |
Family
ID=60660885
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016121190A Active JP6763703B2 (ja) | 2016-06-17 | 2016-06-17 | 半導体装置および半導体装置の製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10497726B2 (ja) |
JP (1) | JP6763703B2 (ja) |
CN (1) | CN107527922B (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020013260A1 (ja) * | 2018-07-12 | 2020-01-16 | 株式会社Flosfia | 半導体装置および半導体装置を含む半導体システム |
WO2020013262A1 (ja) * | 2018-07-12 | 2020-01-16 | 株式会社Flosfia | 半導体装置および半導体装置を含む半導体システム |
WO2020013261A1 (ja) * | 2018-07-12 | 2020-01-16 | 株式会社Flosfia | 積層構造体、積層構造体を含む半導体装置および半導体システム |
WO2020013259A1 (ja) * | 2018-07-12 | 2020-01-16 | 株式会社Flosfia | 半導体装置および半導体装置を含む半導体システム |
WO2020235691A1 (ja) * | 2019-05-23 | 2020-11-26 | 株式会社Flosfia | 半導体装置 |
WO2020235690A1 (ja) * | 2019-05-23 | 2020-11-26 | 株式会社Flosfia | 半導体装置 |
WO2021095474A1 (ja) * | 2019-11-14 | 2021-05-20 | 株式会社Flosfia | 結晶性酸化物のエッチング方法およびトレンチ形成方法ならびに半導体装置の製造方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7245788B2 (ja) * | 2018-02-01 | 2023-03-24 | 株式会社半導体エネルギー研究所 | 表示装置 |
CN110610936B (zh) * | 2019-09-11 | 2021-10-29 | 西安电子科技大学 | 基于键合的单片异质集成Cascode氮化镓高迁移率晶体管及制作方法 |
Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000208614A (ja) * | 1999-01-14 | 2000-07-28 | Mitsubishi Electric Corp | 半導体装置の製造方法及び半導体装置 |
JP2004128508A (ja) * | 2002-10-01 | 2004-04-22 | Samsung Electronics Co Ltd | 多重チャンネルを有するモストランジスター及びその製造方法 |
US20050045995A1 (en) * | 2003-08-25 | 2005-03-03 | International Business Machines Corporation | Ultra-thin silicon-on-insulator and strained-silicon-direct-on-insulator with hybrid crystal orientations |
JP2005340810A (ja) * | 2004-05-25 | 2005-12-08 | Samsung Electronics Co Ltd | マルチ−ブリッジチャンネル型mosトランジスタの製造方法 |
JP2006228986A (ja) * | 2005-02-17 | 2006-08-31 | Renesas Technology Corp | 半導体装置の製造方法 |
US20060289876A1 (en) * | 2005-06-14 | 2006-12-28 | Mike Briere | Methods of combining silicon and III-Nitride material on a single wafer |
JP2009170614A (ja) * | 2008-01-15 | 2009-07-30 | Oki Semiconductor Co Ltd | 光センサおよびそれを備えたフォトic |
JP2011108692A (ja) * | 2009-11-12 | 2011-06-02 | Ulvac Japan Ltd | Cmosデバイス用シリコンウェハの製造方法 |
US20110180806A1 (en) * | 2010-01-28 | 2011-07-28 | Intersil Americas Inc. | Monolithic integration of gallium nitride and silicon devices and circuits, structure and method |
JP2012516037A (ja) * | 2009-01-20 | 2012-07-12 | レイセオン カンパニー | シリコン基板上に形成されるcmosデバイスおよびiii−v族デバイスのための電気コンタクト |
JP2015149376A (ja) * | 2014-02-06 | 2015-08-20 | 国立研究開発法人物質・材料研究機構 | 半導体光検出器 |
US20160064465A1 (en) * | 2014-08-29 | 2016-03-03 | Lg Display Co., Ltd. | Thin film transistor substrate and display using the same |
WO2016035696A1 (ja) * | 2014-09-02 | 2016-03-10 | 株式会社Flosfia | 積層構造体およびその製造方法、半導体装置ならびに結晶膜 |
JP2016051796A (ja) * | 2014-08-29 | 2016-04-11 | 株式会社タムラ製作所 | 半導体素子及びその製造方法 |
JP2016534390A (ja) * | 2013-08-26 | 2016-11-04 | アップル インコーポレイテッド | シリコン薄膜トランジスタ及び半導体酸化物薄膜トランジスタを有するディスプレイ |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7329923B2 (en) * | 2003-06-17 | 2008-02-12 | International Business Machines Corporation | High-performance CMOS devices on hybrid crystal oriented substrates |
US7199451B2 (en) * | 2004-09-30 | 2007-04-03 | Intel Corporation | Growing [110] silicon on [001]-oriented substrate with rare-earth oxide buffer film |
US20070003731A1 (en) * | 2005-06-29 | 2007-01-04 | Micron Technology, Inc. | Gold-semiconductor phase change memory for archival data storage |
KR101716918B1 (ko) * | 2009-07-31 | 2017-03-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
EP2497115A4 (en) * | 2009-11-06 | 2015-09-02 | Semiconductor Energy Lab | SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR |
JP5521751B2 (ja) | 2010-05-10 | 2014-06-18 | 株式会社デンソー | 半導体装置 |
JP5550444B2 (ja) * | 2010-05-17 | 2014-07-16 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US9087687B2 (en) * | 2011-12-23 | 2015-07-21 | International Business Machines Corporation | Thin heterostructure channel device |
JP6091905B2 (ja) * | 2012-01-26 | 2017-03-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6120609B2 (ja) * | 2013-02-25 | 2017-04-26 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法および半導体装置 |
CN105097548A (zh) * | 2015-06-23 | 2015-11-25 | 京东方科技集团股份有限公司 | 氧化物薄膜晶体管、阵列基板及各自制备方法、显示装置 |
-
2016
- 2016-06-17 JP JP2016121190A patent/JP6763703B2/ja active Active
-
2017
- 2017-06-15 US US15/624,617 patent/US10497726B2/en active Active
- 2017-06-16 CN CN201710456077.3A patent/CN107527922B/zh active Active
Patent Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000208614A (ja) * | 1999-01-14 | 2000-07-28 | Mitsubishi Electric Corp | 半導体装置の製造方法及び半導体装置 |
JP2004128508A (ja) * | 2002-10-01 | 2004-04-22 | Samsung Electronics Co Ltd | 多重チャンネルを有するモストランジスター及びその製造方法 |
US20050045995A1 (en) * | 2003-08-25 | 2005-03-03 | International Business Machines Corporation | Ultra-thin silicon-on-insulator and strained-silicon-direct-on-insulator with hybrid crystal orientations |
JP2005340810A (ja) * | 2004-05-25 | 2005-12-08 | Samsung Electronics Co Ltd | マルチ−ブリッジチャンネル型mosトランジスタの製造方法 |
JP2006228986A (ja) * | 2005-02-17 | 2006-08-31 | Renesas Technology Corp | 半導体装置の製造方法 |
US20060289876A1 (en) * | 2005-06-14 | 2006-12-28 | Mike Briere | Methods of combining silicon and III-Nitride material on a single wafer |
JP2009170614A (ja) * | 2008-01-15 | 2009-07-30 | Oki Semiconductor Co Ltd | 光センサおよびそれを備えたフォトic |
JP2012516037A (ja) * | 2009-01-20 | 2012-07-12 | レイセオン カンパニー | シリコン基板上に形成されるcmosデバイスおよびiii−v族デバイスのための電気コンタクト |
JP2011108692A (ja) * | 2009-11-12 | 2011-06-02 | Ulvac Japan Ltd | Cmosデバイス用シリコンウェハの製造方法 |
US20110180806A1 (en) * | 2010-01-28 | 2011-07-28 | Intersil Americas Inc. | Monolithic integration of gallium nitride and silicon devices and circuits, structure and method |
JP2016534390A (ja) * | 2013-08-26 | 2016-11-04 | アップル インコーポレイテッド | シリコン薄膜トランジスタ及び半導体酸化物薄膜トランジスタを有するディスプレイ |
JP2015149376A (ja) * | 2014-02-06 | 2015-08-20 | 国立研究開発法人物質・材料研究機構 | 半導体光検出器 |
US20160064465A1 (en) * | 2014-08-29 | 2016-03-03 | Lg Display Co., Ltd. | Thin film transistor substrate and display using the same |
JP2016051796A (ja) * | 2014-08-29 | 2016-04-11 | 株式会社タムラ製作所 | 半導体素子及びその製造方法 |
WO2016035696A1 (ja) * | 2014-09-02 | 2016-03-10 | 株式会社Flosfia | 積層構造体およびその製造方法、半導体装置ならびに結晶膜 |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2020013260A1 (ja) * | 2018-07-12 | 2021-08-02 | 株式会社Flosfia | 半導体装置および半導体装置を含む半導体システム |
JPWO2020013261A1 (ja) * | 2018-07-12 | 2021-08-02 | 株式会社Flosfia | 積層構造体、積層構造体を含む半導体装置および半導体システム |
WO2020013261A1 (ja) * | 2018-07-12 | 2020-01-16 | 株式会社Flosfia | 積層構造体、積層構造体を含む半導体装置および半導体システム |
WO2020013259A1 (ja) * | 2018-07-12 | 2020-01-16 | 株式会社Flosfia | 半導体装置および半導体装置を含む半導体システム |
JP7462143B2 (ja) | 2018-07-12 | 2024-04-05 | 株式会社Flosfia | 積層構造体、積層構造体を含む半導体装置および半導体システム |
JP7457366B2 (ja) | 2018-07-12 | 2024-03-28 | 株式会社Flosfia | 半導体装置および半導体装置を含む半導体システム |
WO2020013262A1 (ja) * | 2018-07-12 | 2020-01-16 | 株式会社Flosfia | 半導体装置および半導体装置を含む半導体システム |
JPWO2020013262A1 (ja) * | 2018-07-12 | 2021-08-02 | 株式会社Flosfia | 半導体装置および半導体装置を含む半導体システム |
JP7404594B2 (ja) | 2018-07-12 | 2023-12-26 | 株式会社Flosfia | 半導体装置および半導体装置を含む半導体システム |
WO2020013260A1 (ja) * | 2018-07-12 | 2020-01-16 | 株式会社Flosfia | 半導体装置および半導体装置を含む半導体システム |
JPWO2020013259A1 (ja) * | 2018-07-12 | 2021-07-15 | 株式会社Flosfia | 半導体装置および半導体装置を含む半導体システム |
JP7385200B2 (ja) | 2018-07-12 | 2023-11-22 | 株式会社Flosfia | 半導体装置および半導体装置を含む半導体システム |
WO2020235690A1 (ja) * | 2019-05-23 | 2020-11-26 | 株式会社Flosfia | 半導体装置 |
WO2020235691A1 (ja) * | 2019-05-23 | 2020-11-26 | 株式会社Flosfia | 半導体装置 |
WO2021095474A1 (ja) * | 2019-11-14 | 2021-05-20 | 株式会社Flosfia | 結晶性酸化物のエッチング方法およびトレンチ形成方法ならびに半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN107527922A (zh) | 2017-12-29 |
US10497726B2 (en) | 2019-12-03 |
CN107527922B (zh) | 2022-03-04 |
JP6763703B2 (ja) | 2020-09-30 |
US20170365629A1 (en) | 2017-12-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107527922B (zh) | 半导体装置以及半导体装置的制造方法 | |
JP4712301B2 (ja) | 電力用半導体装置 | |
US8227831B2 (en) | Semiconductor device having a junction FET and a MISFET for control | |
US9721951B2 (en) | Semiconductor device using Ge channel and manufacturing method thereof | |
US9997607B2 (en) | Mirrored contact CMOS with self-aligned source, drain, and back-gate | |
JP7343126B2 (ja) | 半導体装置 | |
JP2003007843A (ja) | 半導体装置 | |
US11276690B2 (en) | Integrated semiconductor device and electronic apparatus | |
JP2004179506A (ja) | Soi構造を有する半導体基板及びその製造方法及び半導体装置 | |
JP2003318408A (ja) | 半導体装置およびその製造方法 | |
US11515434B2 (en) | Decoupling capacitor and method of making the same | |
JPS6119164A (ja) | 相補型集積回路とその製造方法 | |
JP5637093B2 (ja) | 炭化珪素半導体装置 | |
JP7081889B2 (ja) | 半導体装置および半導体装置の製造方法 | |
JPH05343686A (ja) | 半導体装置およびその製造方法 | |
US8610183B2 (en) | Field controlled diode with positively biased gate | |
JP7083027B2 (ja) | 半導体デバイスの製造方法と集積半導体デバイス | |
JPH09167838A (ja) | 半導体装置及びその製造方法 | |
JP3176962B2 (ja) | 半導体装置 | |
JP2011108673A (ja) | 半導体装置、その製造方法及び表示装置 | |
JP3210146B2 (ja) | 半導体装置 | |
CN110828566A (zh) | 半导体结构及其形成方法 | |
JPH01253265A (ja) | 半導体装置 | |
JP4424277B2 (ja) | 半導体装置及び接合ウエハ | |
US20060255374A1 (en) | Manufacturing process and structure of power junction field effect transistor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190524 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20200306 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200317 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200518 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200811 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200910 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6763703 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |