JP2009545885A - ＳｉＣショットキーダイオード用モリブデンバリア金属および製造方法 - Google Patents

ＳｉＣショットキーダイオード用モリブデンバリア金属および製造方法 Download PDF

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JP2009545885A
JP2009545885A JP2009522856A JP2009522856A JP2009545885A JP 2009545885 A JP2009545885 A JP 2009545885A JP 2009522856 A JP2009522856 A JP 2009522856A JP 2009522856 A JP2009522856 A JP 2009522856A JP 2009545885 A JP2009545885 A JP 2009545885A
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Prior art keywords
diode
schottky
molybdenum
layer
forming
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JP2009522856A
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JP2009545885A5 (enExample
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リチェーリ，ジョバンニ
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ヴィシェイ−シリコニックス
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Publication of JP2009545885A publication Critical patent/JP2009545885A/ja
Publication of JP2009545885A5 publication Critical patent/JP2009545885A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions

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  • Electrodes Of Semiconductors (AREA)
JP2009522856A 2006-07-31 2007-07-31 ＳｉＣショットキーダイオード用モリブデンバリア金属および製造方法 Pending JP2009545885A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US82080706P 2006-07-31 2006-07-31
PCT/US2007/017135 WO2008016619A1 (en) 2006-07-31 2007-07-31 Molybdenum barrier metal for sic schottky diode and process of manufacture

Related Child Applications (1)

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JP2015011508A Division JP6379052B2 (ja) 2006-07-31 2015-01-23 ＳｉＣショットキーダイオード用モリブデンバリア金属および製造方法

Publications (2)

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JP2009545885A true JP2009545885A (ja) 2009-12-24
JP2009545885A5 JP2009545885A5 (enExample) 2010-03-25

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JP2015011508A Active JP6379052B2 (ja) 2006-07-31 2015-01-23 ＳｉＣショットキーダイオード用モリブデンバリア金属および製造方法

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Country Status (6)

Country Link
US (1) US9627552B2 (enExample)
EP (1) EP2047514A4 (enExample)
JP (2) JP2009545885A (enExample)
KR (1) KR101193453B1 (enExample)
CN (1) CN101506989B (enExample)
WO (1) WO2008016619A1 (enExample)

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WO2013183677A1 (ja) * 2012-06-06 2013-12-12 ローム株式会社 半導体装置およびその製造方法
JP2017118104A (ja) * 2015-12-01 2017-06-29 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ 半導体本体上の接触層形成

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US8394196B2 (en) * 2006-12-12 2013-03-12 Applied Materials, Inc. Formation of in-situ phosphorus doped epitaxial layer containing silicon and carbon
US7960236B2 (en) * 2006-12-12 2011-06-14 Applied Materials, Inc. Phosphorus containing Si epitaxial layers in N-type source/drain junctions
JP2009094392A (ja) * 2007-10-11 2009-04-30 Mitsubishi Electric Corp 炭化珪素半導体装置の製造方法
JP4535151B2 (ja) * 2008-03-19 2010-09-01 株式会社デンソー 炭化珪素半導体装置の製造方法
CN101320601B (zh) * 2008-06-18 2011-08-17 西北工业大学 碳化硅肖特基结式核电池及其制作方法
JP5408929B2 (ja) * 2008-08-21 2014-02-05 昭和電工株式会社 半導体装置および半導体装置の製造方法
KR20130076314A (ko) * 2011-12-28 2013-07-08 삼성전자주식회사 파워소자 및 이의 제조방법
CN103033276B (zh) * 2012-12-27 2014-07-02 长安大学 碳化硅温度传感器及其制造方法
US9172239B2 (en) 2013-03-15 2015-10-27 Fairchild Semiconductor Corporation Methods and apparatus related to a precision input power protection device
CN106256024B (zh) * 2014-04-30 2019-11-26 三菱电机株式会社 碳化硅半导体装置
US20150349281A1 (en) * 2014-06-03 2015-12-03 Palo Alto Research Center Incorporated Organic schottky diodes
US9735147B2 (en) 2014-09-15 2017-08-15 Fairchild Semiconductor Corporation Fast and stable ultra low drop-out (LDO) voltage clamp device
CN105244267B (zh) * 2015-11-05 2018-12-14 株洲南车时代电气股份有限公司 一种碳化硅PiN器件的欧姆接触方法
DE102015120668B4 (de) * 2015-11-27 2022-08-11 Infineon Technologies Ag Halbleiterbauelement und Verfahren zum Herstellen eines Halbleiterbauelementes
CN106409663A (zh) * 2016-06-20 2017-02-15 中国工程物理研究院电子工程研究所 一种制备高阻断电压碳化硅功率器件的方法
CN109326523A (zh) * 2018-11-21 2019-02-12 中国电子科技集团公司第十三研究所 碳化硅肖特基接触的制备方法及碳化硅肖特基二极管
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