AU2001273458A1 - Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods of forming a power transistor - Google Patents
Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods of forming a power transistorInfo
- Publication number
- AU2001273458A1 AU2001273458A1 AU2001273458A AU7345801A AU2001273458A1 AU 2001273458 A1 AU2001273458 A1 AU 2001273458A1 AU 2001273458 A AU2001273458 A AU 2001273458A AU 7345801 A AU7345801 A AU 7345801A AU 2001273458 A1 AU2001273458 A1 AU 2001273458A1
- Authority
- AU
- Australia
- Prior art keywords
- methods
- power
- semiconductor switching
- forming
- power semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000034 method Methods 0.000 title 5
- 239000004065 semiconductor Substances 0.000 title 3
- 230000000712 assembly Effects 0.000 title 1
- 238000000429 assembly Methods 0.000 title 1
- 238000006243 chemical reaction Methods 0.000 title 1
- 238000004806 packaging method and process Methods 0.000 title 1
Classifications
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US21786000P | 2000-07-13 | 2000-07-13 | |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FI19992686A (en) * | 1999-12-14 | 2001-06-15 | Nokia Networks Oy | Synkronitasasuuntaus |
US6737301B2 (en) * | 2000-07-13 | 2004-05-18 | Isothermal Systems Research, Inc. | Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods of forming a power transistor |
TW575949B (en) | 2001-02-06 | 2004-02-11 | Hitachi Ltd | Mixed integrated circuit device, its manufacturing method and electronic apparatus |
US6931369B1 (en) | 2001-05-01 | 2005-08-16 | National Semiconductor Corporation | Method to perform thermal simulation of an electronic circuit on a network |
US6678877B1 (en) * | 2001-08-15 | 2004-01-13 | National Semiconductor Corporation | Creating a PC board (PCB) layout for a circuit in which the components of the circuit are placed in the determined PCB landing areas |
JP3967108B2 (en) * | 2001-10-26 | 2007-08-29 | 富士通株式会社 | Semiconductor device and manufacturing method thereof |
US6555883B1 (en) * | 2001-10-29 | 2003-04-29 | Power Integrations, Inc. | Lateral power MOSFET for high switching speeds |
US6750546B1 (en) * | 2001-11-05 | 2004-06-15 | Skyworks Solutions, Inc. | Flip-chip leadframe package |
US6583663B1 (en) * | 2002-04-22 | 2003-06-24 | Power Integrations, Inc. | Power integrated circuit with distributed gate driver |
SE522910C2 (en) * | 2002-06-03 | 2004-03-16 | Ericsson Telefon Ab L M | Integrated circuit for reducing current density in a transistor including intertwined collector, emitter and control fingers |
JP3580803B2 (en) * | 2002-08-09 | 2004-10-27 | 沖電気工業株式会社 | Semiconductor device |
US6972464B2 (en) * | 2002-10-08 | 2005-12-06 | Great Wall Semiconductor Corporation | Power MOSFET |
KR20050070113A (en) * | 2002-11-01 | 2005-07-05 | 크라우스 루디 | Apparatus for providing high quality power |
US6943446B2 (en) * | 2002-11-08 | 2005-09-13 | Lsi Logic Corporation | Via construction for structural support |
US6969909B2 (en) * | 2002-12-20 | 2005-11-29 | Vlt, Inc. | Flip chip FET device |
US7038917B2 (en) * | 2002-12-27 | 2006-05-02 | Vlt, Inc. | Low loss, high density array interconnection |
US6825559B2 (en) | 2003-01-02 | 2004-11-30 | Cree, Inc. | Group III nitride based flip-chip intergrated circuit and method for fabricating |
KR20050090372A (en) * | 2003-02-04 | 2005-09-13 | 그레이트 웰 세미컨덕터 | Bi-directional power switch |
US7091574B2 (en) | 2003-03-13 | 2006-08-15 | International Business Machines Corporation | Voltage island circuit placement |
US7026664B2 (en) * | 2003-04-24 | 2006-04-11 | Power-One, Inc. | DC-DC converter implemented in a land grid array package |
JP4115882B2 (en) * | 2003-05-14 | 2008-07-09 | 株式会社ルネサステクノロジ | Semiconductor device |
JP3730644B2 (en) * | 2003-09-11 | 2006-01-05 | ローム株式会社 | Semiconductor device |
US7118833B2 (en) * | 2003-09-26 | 2006-10-10 | Flipchip International, Llc | Forming partial-depth features in polymer film |
US7126164B2 (en) * | 2003-09-26 | 2006-10-24 | Flipchip International Llc | Wafer-level moat structures |
JP4397210B2 (en) | 2003-10-20 | 2010-01-13 | ローム株式会社 | Semiconductor device |
US7851872B2 (en) * | 2003-10-22 | 2010-12-14 | Marvell World Trade Ltd. | Efficient transistor structure |
US7265448B2 (en) * | 2004-01-26 | 2007-09-04 | Marvell World Trade Ltd. | Interconnect structure for power transistors |
US7960833B2 (en) * | 2003-10-22 | 2011-06-14 | Marvell World Trade Ltd. | Integrated circuits and interconnect structure for integrated circuits |
US7227246B2 (en) * | 2003-10-30 | 2007-06-05 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd. | Matching circuits on optoelectronic devices |
US20080036070A1 (en) * | 2003-12-02 | 2008-02-14 | Great Wall Semiconductor Corporation | Bond Wireless Package |
WO2005059958A2 (en) | 2003-12-12 | 2005-06-30 | Great Wall Semiconductor Corporation | Monolithic power semiconductor structures |
WO2005059957A2 (en) * | 2003-12-12 | 2005-06-30 | Great Wall Semiconductor Corporation | Metal interconnect system and method for direct die attachment |
US7009842B2 (en) | 2004-01-30 | 2006-03-07 | Isothermal Systems Research, Inc. | Three dimensional packaging and cooling of mixed signal, mixed power density electronic modules |
DE102004016920B4 (en) * | 2004-04-06 | 2006-03-02 | Infineon Technologies Ag | Method for switching a voltage supply of voltage domains of a semiconductor circuit and corresponding semiconductor circuit |
EP1589515A3 (en) * | 2004-04-21 | 2007-10-03 | LG Electronics Inc. | Plasma display apparatus and method for driving the same |
DE102004020172A1 (en) * | 2004-04-24 | 2005-11-24 | Robert Bosch Gmbh | Monolithic controller for the generator unit of a motor vehicle |
US7501702B2 (en) * | 2004-06-24 | 2009-03-10 | Fairchild Semiconductor Corporation | Integrated transistor module and method of fabricating same |
US7195341B2 (en) * | 2004-09-30 | 2007-03-27 | Lexmark International, Inc. | Power and ground buss layout for reduced substrate size |
US7394158B2 (en) * | 2004-10-21 | 2008-07-01 | Siliconix Technology C.V. | Solderable top metal for SiC device |
US7812441B2 (en) | 2004-10-21 | 2010-10-12 | Siliconix Technology C.V. | Schottky diode with improved surge capability |
US9419092B2 (en) | 2005-03-04 | 2016-08-16 | Vishay-Siliconix | Termination for SiC trench devices |
US7834376B2 (en) | 2005-03-04 | 2010-11-16 | Siliconix Technology C. V. | Power semiconductor switch |
JP2006269835A (en) * | 2005-03-24 | 2006-10-05 | Nec Electronics Corp | Semiconductor device |
US7522405B2 (en) * | 2005-05-23 | 2009-04-21 | Perfect Switch, Llc | High current electrical switch and method |
JP2007005539A (en) * | 2005-06-23 | 2007-01-11 | Seiko Epson Corp | Semiconductor device |
JP4605378B2 (en) | 2005-07-13 | 2011-01-05 | セイコーエプソン株式会社 | Semiconductor device |
US8368165B2 (en) | 2005-10-20 | 2013-02-05 | Siliconix Technology C. V. | Silicon carbide Schottky diode |
US7546568B2 (en) * | 2005-12-19 | 2009-06-09 | Lsi Corporation | Automation of tie cell insertion, optimization and replacement by scan flip-flops to increase fault coverage |
US20070193285A1 (en) * | 2006-02-21 | 2007-08-23 | Knight Paul A | Testing for Leaks in a Two-Phase Liquid Cooling System |
US20070193721A1 (en) * | 2006-02-21 | 2007-08-23 | Tilton Donald E | Automated Venting and Refilling of Multiple Liquid Cooling Systems |
US20070193300A1 (en) * | 2006-02-21 | 2007-08-23 | Tilton Donald E | Two-phase liquid cooling system with active venting |
US7425910B1 (en) | 2006-02-27 | 2008-09-16 | Marvell International Ltd. | Transmitter digital-to-analog converter with noise shaping |
US7315052B2 (en) * | 2006-03-02 | 2008-01-01 | Micrel, Inc. | Power FET with embedded body pickup |
TWM298226U (en) * | 2006-04-14 | 2006-09-21 | Lite On Semiconductor Corp | Encapsulation structure of optically movement detection |
US20070294767A1 (en) * | 2006-06-20 | 2007-12-20 | Paul Piccard | Method and system for accurate detection and removal of pestware |
US9627552B2 (en) | 2006-07-31 | 2017-04-18 | Vishay-Siliconix | Molybdenum barrier metal for SiC Schottky diode and process of manufacture |
US7999364B2 (en) * | 2006-08-24 | 2011-08-16 | Monolithic Power Systems, Inc. | Method and flip chip structure for power devices |
US7679099B2 (en) * | 2006-12-04 | 2010-03-16 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Low thermal resistance high power LED |
JP2008160019A (en) * | 2006-12-26 | 2008-07-10 | Shinko Electric Ind Co Ltd | Electronic component |
CN101652858A (en) * | 2007-03-15 | 2010-02-17 | 马维尔国际贸易有限公司 | Integrated circuits and interconnect structure for integrated circuits |
JP5175482B2 (en) | 2007-03-29 | 2013-04-03 | ルネサスエレクトロニクス株式会社 | Semiconductor device |
JP2008270277A (en) * | 2007-04-16 | 2008-11-06 | Nec Electronics Corp | Misalignment detection pattern, misalignment detection method and semiconductor device |
US8390972B2 (en) * | 2007-04-17 | 2013-03-05 | Hamilton Sundstrand Corporation | Secondary protection approach for power switching applications |
US7636005B2 (en) * | 2007-09-07 | 2009-12-22 | International Rectifier Corporation | Active clamp for semiconductor device |
US7882482B2 (en) * | 2007-10-12 | 2011-02-01 | Monolithic Power Systems, Inc. | Layout schemes and apparatus for high performance DC-DC output stage |
US7808222B2 (en) * | 2007-10-12 | 2010-10-05 | Monolithic Power Systems, Inc. | Method and apparatus for high performance switch mode voltage regulators |
US7977822B2 (en) * | 2007-11-05 | 2011-07-12 | Arm Limited | Dynamically changing control of sequenced power gating |
WO2009082706A1 (en) | 2007-12-21 | 2009-07-02 | The Trustees Of Columbia University In The City Of New York | Active cmos sensor array for electrochemical biomolecular detection |
US8169081B1 (en) | 2007-12-27 | 2012-05-01 | Volterra Semiconductor Corporation | Conductive routings in integrated circuits using under bump metallization |
US20090200864A1 (en) * | 2008-02-12 | 2009-08-13 | Josef Maier | Chip on bus bar |
US8017451B2 (en) | 2008-04-04 | 2011-09-13 | The Charles Stark Draper Laboratory, Inc. | Electronic modules and methods for forming the same |
US8273603B2 (en) * | 2008-04-04 | 2012-09-25 | The Charles Stark Draper Laboratory, Inc. | Interposers, electronic modules, and methods for forming the same |
US8686698B2 (en) | 2008-04-16 | 2014-04-01 | Enpirion, Inc. | Power converter with controller operable in selected modes of operation |
US8692532B2 (en) | 2008-04-16 | 2014-04-08 | Enpirion, Inc. | Power converter with controller operable in selected modes of operation |
US9246390B2 (en) | 2008-04-16 | 2016-01-26 | Enpirion, Inc. | Power converter with controller operable in selected modes of operation |
US8541991B2 (en) | 2008-04-16 | 2013-09-24 | Enpirion, Inc. | Power converter with controller operable in selected modes of operation |
US8559149B2 (en) * | 2008-05-05 | 2013-10-15 | Hamilton Sundstrand Corporation | Modular primary distribution contact board |
GB2460471B (en) * | 2008-05-31 | 2011-11-23 | Filtronic Compound Semiconductors Ltd | A field effect transistor and a method of manufacture thereof |
US8164157B2 (en) * | 2008-07-27 | 2012-04-24 | David Robert Morgan | Signal absorption induction circuit |
KR101473300B1 (en) * | 2008-08-21 | 2014-12-26 | 삼성전자주식회사 | Flip chip package and method of manufacturing the same |
US20100054001A1 (en) * | 2008-08-26 | 2010-03-04 | Kenneth Dyer | AC/DC Converter with Power Factor Correction |
US8441216B2 (en) * | 2008-09-03 | 2013-05-14 | ALVA Systems, Inc. | Power supply system for a building |
GB2466313A (en) | 2008-12-22 | 2010-06-23 | Cambridge Silicon Radio Ltd | Radio Frequency CMOS Transistor |
US8698463B2 (en) | 2008-12-29 | 2014-04-15 | Enpirion, Inc. | Power converter with a dynamically configurable controller based on a power conversion mode |
US9548714B2 (en) | 2008-12-29 | 2017-01-17 | Altera Corporation | Power converter with a dynamically configurable controller and output filter |
US8648449B2 (en) * | 2009-01-29 | 2014-02-11 | International Rectifier Corporation | Electrical connectivity for circuit applications |
US9070670B2 (en) | 2009-01-29 | 2015-06-30 | International Rectifier Corporation | Electrical connectivity of die to a host substrate |
JP4833307B2 (en) * | 2009-02-24 | 2011-12-07 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Semiconductor module, terminal plate, method for manufacturing terminal plate, and method for manufacturing semiconductor module |
CN102439713B (en) * | 2009-04-08 | 2015-04-22 | 宜普电源转换公司 | Bumped, self-isolated GaN transistor chip with electrically isolated back surface |
US9029866B2 (en) * | 2009-08-04 | 2015-05-12 | Gan Systems Inc. | Gallium nitride power devices using island topography |
US9818857B2 (en) | 2009-08-04 | 2017-11-14 | Gan Systems Inc. | Fault tolerant design for large area nitride semiconductor devices |
JP5985393B2 (en) | 2009-08-04 | 2016-09-06 | ジーエーエヌ システムズ インコーポレイテッド | Island matrix gallium nitride microwave transistor and power switching transistor |
US8148823B1 (en) | 2009-12-14 | 2012-04-03 | Picor Corporation | Low loss package for electronic device |
DE102010001788A1 (en) * | 2010-02-10 | 2011-08-11 | Forschungsverbund Berlin e.V., 12489 | Scalable structure for lateral semiconductor devices with high current carrying capacity |
US9071248B2 (en) * | 2010-03-03 | 2015-06-30 | Freescale Semiconductor, Inc. | MOS transistor drain-to-gate leakage protection circuit and method therefor |
US8791508B2 (en) * | 2010-04-13 | 2014-07-29 | Gan Systems Inc. | High density gallium nitride devices using island topology |
CN102859689B (en) * | 2010-04-28 | 2015-07-01 | 日产自动车株式会社 | Semiconductor device |
US9263439B2 (en) * | 2010-05-24 | 2016-02-16 | Infineon Technologies Americas Corp. | III-nitride switching device with an emulated diode |
US8692360B1 (en) * | 2010-07-06 | 2014-04-08 | International Rectifier Corporation | Electrical connectivity for circuit applications |
US8927909B2 (en) * | 2010-10-11 | 2015-01-06 | Stmicroelectronics, Inc. | Closed loop temperature controlled circuit to improve device stability |
US9093433B2 (en) * | 2010-11-18 | 2015-07-28 | Microchip Technology Incorporated | Using bump bonding to distribute current flow on a semiconductor power device |
US9502312B2 (en) * | 2010-11-29 | 2016-11-22 | Qualcomm Incorporated | Area efficient field effect device |
US8867295B2 (en) * | 2010-12-17 | 2014-10-21 | Enpirion, Inc. | Power converter for a memory module |
US9006099B2 (en) * | 2011-06-08 | 2015-04-14 | Great Wall Semiconductor Corporation | Semiconductor device and method of forming a power MOSFET with interconnect structure silicide layer and low profile bump |
WO2013033340A1 (en) * | 2011-08-30 | 2013-03-07 | Watlow Electric Manufacturing Company | Thermal array system |
US9373617B2 (en) | 2011-09-11 | 2016-06-21 | Cree, Inc. | High current, low switching loss SiC power module |
JP2014531752A (en) | 2011-09-11 | 2014-11-27 | クリー インコーポレイテッドCree Inc. | High current density power module with transistors having improved layout |
US9640617B2 (en) | 2011-09-11 | 2017-05-02 | Cree, Inc. | High performance power module |
AT512063B1 (en) * | 2011-10-31 | 2016-01-15 | Fronius Int Gmbh | POWER SOURCE AND METHOD FOR COOLING SUCH A POWER SOURCE |
AT512131B1 (en) * | 2011-10-31 | 2013-09-15 | Fronius Int Gmbh | PLATINUM FOR INTEGRATION IN A POWER SOURCE |
US8836029B2 (en) * | 2012-02-29 | 2014-09-16 | Smsc Holdings S.A.R.L. | Transistor with minimized resistance |
US9281260B2 (en) | 2012-03-08 | 2016-03-08 | Infineon Technologies Ag | Semiconductor packages and methods of forming the same |
US9040346B2 (en) * | 2012-05-03 | 2015-05-26 | Infineon Technologies Ag | Semiconductor package and methods of formation thereof |
US8847315B2 (en) * | 2012-05-07 | 2014-09-30 | Qualcomm Incorporated | Complementary metal-oxide-semiconductor (CMOS) device and method |
USD721047S1 (en) | 2013-03-07 | 2015-01-13 | Vlt, Inc. | Semiconductor device |
US8975694B1 (en) * | 2013-03-07 | 2015-03-10 | Vlt, Inc. | Low resistance power switching device |
US8921986B2 (en) * | 2013-03-15 | 2014-12-30 | Microchip Technology Incorporated | Insulated bump bonding |
US20150008867A1 (en) * | 2013-07-03 | 2015-01-08 | At&T Intellectual Property I, L.P. | Charge pump battery charging |
US9312760B2 (en) * | 2013-12-16 | 2016-04-12 | Infineon Technologies Austria Ag | Switched-mode power converter with split partitioning |
US9536952B2 (en) | 2014-05-12 | 2017-01-03 | Intersil Americas LLC | Body contact layouts for semiconductor structures |
US9509217B2 (en) | 2015-04-20 | 2016-11-29 | Altera Corporation | Asymmetric power flow controller for a power converter and method of operating the same |
US9450494B1 (en) * | 2015-05-28 | 2016-09-20 | Infineon Technologies Austria Ag | Inductive compensation based control of synchronous rectification switch |
US10600753B2 (en) * | 2015-08-28 | 2020-03-24 | Texas Instruments Incorporated | Flip chip backside mechanical die grounding techniques |
US10607958B2 (en) * | 2015-08-28 | 2020-03-31 | Texas Instruments Incorporated | Flip chip backside die grounding techniques |
DE102015217426A1 (en) * | 2015-09-11 | 2017-03-16 | Zf Friedrichshafen Ag | Multifunctional High Current Circuit Board |
WO2017054855A1 (en) * | 2015-09-30 | 2017-04-06 | Agile Power Switch 3D - Integration Apsi3D | A semiconductor power device comprising additional tracks and method of manufacturing the semiconductor power device |
US9553087B1 (en) * | 2015-11-02 | 2017-01-24 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor device |
CN105427824B (en) * | 2016-01-05 | 2016-11-30 | 京东方科技集团股份有限公司 | There is GOA circuit, array base palte and the display floater of electric leakage compensating module |
DE102016108500B4 (en) * | 2016-05-09 | 2023-12-14 | Infineon Technologies Ag | Method for producing a semiconductor device with a support element and a semiconductor device with a support element |
WO2019054998A1 (en) * | 2017-09-13 | 2019-03-21 | Intel Corporation | Active silicon bridge |
CN108321773B (en) * | 2018-02-07 | 2019-07-30 | 上海艾为电子技术股份有限公司 | Detection circuit and the electronic device for applying it |
CN112075004A (en) * | 2018-05-04 | 2020-12-11 | 奈克斯跟踪器有限公司 | System and method for DC power conversion and transmission in the solar field |
US10926346B2 (en) * | 2018-06-20 | 2021-02-23 | Antaya Technologies Corporation | Resistance soldering system |
CN108923248B (en) * | 2018-07-26 | 2021-06-22 | 成都英思嘉半导体技术有限公司 | Structure of sinking type direct modulation laser and driver and application thereof |
US10892316B2 (en) * | 2018-11-15 | 2021-01-12 | Google Llc | High density ball grid array (BGA) package capacitor design |
TWI726313B (en) | 2019-04-30 | 2021-05-01 | 作同 柯 | Power semiconductor |
US11258270B2 (en) * | 2019-06-28 | 2022-02-22 | Alpha And Omega Semiconductor (Cayman) Ltd. | Super-fast transient response (STR) AC/DC converter for high power density charging application |
US10630080B1 (en) * | 2019-06-28 | 2020-04-21 | Alpha And Omega Semiconductor (Cayman) Ltd. | Super-fast transient response (STR) AC/DC Converter for high power density charging application |
US11476737B2 (en) * | 2020-03-13 | 2022-10-18 | Toyota Motor Engineering & Manufacturing North America. Inc. | Integrated power control assemblies with built-in cooling systems |
CN112289787B (en) * | 2020-09-17 | 2024-01-26 | 南京通华芯微电子有限公司 | MOS device with multiple control functions |
DE102022205503A1 (en) * | 2022-05-31 | 2023-11-30 | Rolls-Royce Deutschland Ltd & Co Kg | Electrical connection arrangement for a prepackage power converter |
Family Cites Families (63)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4008484A (en) * | 1968-04-04 | 1977-02-15 | Fujitsu Ltd. | Semiconductor device having multilayered electrode structure |
CH631298A5 (en) | 1977-01-10 | 1982-07-30 | Kremlev V J | INTEGRATED LOGICAL CIRCUIT. |
US4256977A (en) | 1978-12-26 | 1981-03-17 | Honeywell Inc. | Alternating polarity power supply control apparatus |
US4462041A (en) | 1981-03-20 | 1984-07-24 | Harris Corporation | High speed and current gain insulated gate field effect transistors |
JPS60239051A (en) * | 1984-05-11 | 1985-11-27 | Mitsubishi Electric Corp | Semiconductor device |
DE3583897D1 (en) | 1984-06-22 | 1991-10-02 | Hitachi Ltd | SEMICONDUCTOR SWITCH. |
JPS62218533A (en) * | 1986-03-18 | 1987-09-25 | Sumitomo Metal Mining Co Ltd | High conductivity copper alloy |
JPH01105395U (en) * | 1987-12-28 | 1989-07-17 | ||
JPH0267731A (en) | 1988-09-02 | 1990-03-07 | Toshiba Corp | Solder bump type semiconductor device and manufacture thereof |
FR2659810B1 (en) | 1990-03-16 | 1992-06-05 | Merlin Gerin | MEDIUM VOLTAGE STATIC SWITCH. |
US5910669A (en) | 1992-07-24 | 1999-06-08 | Siliconix Incorporated | Field effect Trench transistor having lightly doped epitaxial region on the surface portion thereof |
US5418064A (en) * | 1992-11-16 | 1995-05-23 | Allied Signal Inc. | Electroless plating of substrates |
JPH06260927A (en) | 1993-03-08 | 1994-09-16 | Nippon Telegr & Teleph Corp <Ntt> | Logic circuit for complementary field-effect transistor |
US5548150A (en) | 1993-03-10 | 1996-08-20 | Kabushiki Kaisha Toshiba | Field effect transistor |
DE69435280D1 (en) | 1993-03-10 | 2010-04-15 | Glaxosmithkline Llc | Phosphodiesterase of the human brain and screening procedures |
US5298797A (en) * | 1993-03-12 | 1994-03-29 | Toko America, Inc. | Gate charge recovery circuit for gate-driven semiconductor devices |
US5608616A (en) | 1993-12-07 | 1997-03-04 | Nippondenso Co., Ltd. | Power converter |
US5652183A (en) | 1994-01-18 | 1997-07-29 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating semiconductor device containing excessive silicon in metal silicide film |
US5470795A (en) | 1994-02-25 | 1995-11-28 | Shushurin; Vladimir V. | Method of connecting terminals of a plastic-encapsulated power transistor to a printed-circuit board |
JPH07321306A (en) | 1994-03-31 | 1995-12-08 | Seiko Instr Inc | Semiconductor device and its manufacture |
US5572417A (en) * | 1994-07-13 | 1996-11-05 | Vlt Corporation | AC to DC boost power converters |
US5493275A (en) * | 1994-08-09 | 1996-02-20 | Sensormatic Electronics Corporation | Apparatus for deactivation of electronic article surveillance tags |
US5728594A (en) | 1994-11-02 | 1998-03-17 | Texas Instruments Incorporated | Method of making a multiple transistor integrated circuit with thick copper interconnect |
US6150722A (en) | 1994-11-02 | 2000-11-21 | Texas Instruments Incorporated | Ldmos transistor with thick copper interconnect |
US5736766A (en) | 1994-12-12 | 1998-04-07 | Texas Instruments Incorporated | Medium voltage LDMOS device and method of fabrication |
US5721506A (en) | 1994-12-14 | 1998-02-24 | Micron Technology, Inc. | Efficient Vccp supply with regulation for voltage control |
US5479089A (en) | 1994-12-21 | 1995-12-26 | Hughes Aircraft Company | Power converter apparatus having instantaneous commutation switching system |
US5479117A (en) | 1995-01-11 | 1995-12-26 | At&T Corp. | Hybrid data processing system including pulsed-power-supply CMOS circuits |
US5596466A (en) * | 1995-01-13 | 1997-01-21 | Ixys Corporation | Intelligent, isolated half-bridge power module |
US5973367A (en) | 1995-10-13 | 1999-10-26 | Siliconix Incorporated | Multiple gated MOSFET for use in DC-DC converter |
US5777383A (en) * | 1996-05-09 | 1998-07-07 | Lsi Logic Corporation | Semiconductor chip package with interconnect layers and routing and testing methods |
US5818084A (en) * | 1996-05-15 | 1998-10-06 | Siliconix Incorporated | Pseudo-Schottky diode |
US5973368A (en) * | 1996-06-05 | 1999-10-26 | Pearce; Lawrence G. | Monolithic class D amplifier |
US5744843A (en) | 1996-08-28 | 1998-04-28 | Texas Instruments Incorporated | CMOS power device and method of construction and layout |
US5793625A (en) * | 1997-01-24 | 1998-08-11 | Baker Hughes Incorporated | Boost converter regulated alternator |
US6020729A (en) | 1997-12-16 | 2000-02-01 | Volterra Semiconductor Corporation | Discrete-time sampling of data for use in switching regulators |
JP3129275B2 (en) | 1998-02-27 | 2001-01-29 | 日本電気株式会社 | Semiconductor device |
US6114726A (en) | 1998-03-11 | 2000-09-05 | International Rectifier Corp. | Low voltage MOSFET |
US5969513A (en) | 1998-03-24 | 1999-10-19 | Volterra Semiconductor Corporation | Switched capacitor current source for use in switching regulators |
US6084792A (en) * | 1998-08-21 | 2000-07-04 | Vpt, Inc. | Power converter with circuits for providing gate driving |
US6023155A (en) | 1998-10-09 | 2000-02-08 | Rockwell Collins, Inc. | Utilizing a combination constant power flyback converter and shunt voltage regulator |
US7462910B1 (en) * | 1998-10-14 | 2008-12-09 | International Rectifier Corporation | P-channel trench MOSFET structure |
US6100676A (en) | 1998-10-30 | 2000-08-08 | Volterra Semiconductor Corporation | Method and apparatus for digital voltage regulation |
US6268716B1 (en) | 1998-10-30 | 2001-07-31 | Volterra Semiconductor Corporation | Digital voltage regulator using current control |
US6160441A (en) | 1998-10-30 | 2000-12-12 | Volterra Semiconductor Corporation | Sensors for measuring current passing through a load |
US6031361A (en) | 1998-10-30 | 2000-02-29 | Volterra Semiconductor Corporation | Voltage regulation using an estimated current |
US6198261B1 (en) | 1998-10-30 | 2001-03-06 | Volterra Semiconductor Corporation | Method and apparatus for control of a power transistor in a digital voltage regulator |
US6278199B1 (en) * | 1999-02-25 | 2001-08-21 | International Rectifier Corp. | Electronic single switch module |
US6316956B1 (en) * | 1999-10-22 | 2001-11-13 | Motorola, Inc. | Multiple redundant reliability enhancement method for integrated circuits and transistors |
KR100343151B1 (en) * | 1999-10-28 | 2002-07-05 | 김덕중 | High voltage semiconductor device using SIPOS and method for fabricating the same |
US6288919B1 (en) * | 1999-12-16 | 2001-09-11 | Chippower.Com, Inc. | Single stage AC/DC converter high frequency AC distribution systems |
US6278264B1 (en) | 2000-02-04 | 2001-08-21 | Volterra Semiconductor Corporation | Flip-chip switching regulator |
US6414884B1 (en) * | 2000-02-04 | 2002-07-02 | Lucent Technologies Inc. | Method and apparatus for securing electronic circuits |
US6421262B1 (en) * | 2000-02-08 | 2002-07-16 | Vlt Corporation | Active rectifier |
US6271651B1 (en) | 2000-04-20 | 2001-08-07 | Volterra Semiconductor Corporation | Inductor shorting switch for a switching voltage regulator |
US6329801B1 (en) | 2000-04-24 | 2001-12-11 | Volterra Semiconductor Corporation | Switching regulator control system and method |
EP1172923B1 (en) * | 2000-07-10 | 2006-09-13 | STMicroelectronics S.r.l. | Switching voltage regulator, having a driver circuit of a power MOS switch |
US6737301B2 (en) * | 2000-07-13 | 2004-05-18 | Isothermal Systems Research, Inc. | Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods of forming a power transistor |
US6404173B1 (en) | 2000-07-28 | 2002-06-11 | Iwatt | Linear AC to DC regulator with synchronous rectification |
US6462521B1 (en) * | 2001-07-17 | 2002-10-08 | Semtech Corporation | High-speed charge-mode controller for a multi-phase switched-mode power converter |
US6597210B2 (en) * | 2001-10-03 | 2003-07-22 | Bruce W. Carsten | Apparatus and method for control and driving BJT used as controlled rectifier |
US6563725B2 (en) * | 2001-10-03 | 2003-05-13 | Bruce W. Carsten | Apparatus and method for control and driving BJT used as synchronous rectifier |
US7417516B2 (en) * | 2005-11-14 | 2008-08-26 | Honeywell International Inc. | Monolithic microwave integrated circuit providing power dividing and power monitoring functionality |
-
2001
- 2001-07-12 US US09/904,575 patent/US6737301B2/en not_active Expired - Lifetime
- 2001-07-12 AU AU2001273458A patent/AU2001273458A1/en not_active Abandoned
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- 2001-07-12 US US09/905,164 patent/US20020071293A1/en not_active Abandoned
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2002
- 2002-07-22 US US10/201,122 patent/US20020195662A1/en not_active Abandoned
-
2003
- 2003-11-07 US US10/703,921 patent/US7019337B2/en not_active Expired - Lifetime
-
2005
- 2005-03-24 US US11/088,551 patent/US20050230746A1/en not_active Abandoned
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US20020093062A1 (en) | 2002-07-18 |
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