AU2001232248A1 - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
AU2001232248A1
AU2001232248A1 AU2001232248A AU3224801A AU2001232248A1 AU 2001232248 A1 AU2001232248 A1 AU 2001232248A1 AU 2001232248 A AU2001232248 A AU 2001232248A AU 3224801 A AU3224801 A AU 3224801A AU 2001232248 A1 AU2001232248 A1 AU 2001232248A1
Authority
AU
Australia
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
semiconductor
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001232248A
Inventor
Masakazu Aoki
Koichiro Ishibashi
Junichi Nishimoto
Shoji Syukuri
Masanao Yamaoka
Kazumasa Yanagisawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of AU2001232248A1 publication Critical patent/AU2001232248A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B28/00—Compositions of mortars, concrete or artificial stone, containing inorganic binders or the reaction product of an inorganic and an organic binder, e.g. polycarboxylate cements
    • C04B28/02—Compositions of mortars, concrete or artificial stone, containing inorganic binders or the reaction product of an inorganic and an organic binder, e.g. polycarboxylate cements containing hydraulic cements other than calcium sulfates
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
    • G11C29/789—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes using non-volatile cells or latches
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G11C29/848—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by adjacent switching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/22—Connection or disconnection of sub-entities or redundant parts of a device in response to a measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H01L27/0211—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique adapted for requirements of temperature
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2103/00—Function or property of ingredients for mortars, concrete or artificial stone
    • C04B2103/0068—Ingredients with a function or property not provided for elsewhere in C04B2103/00
    • C04B2103/0097—Anion- and far-infrared-emitting materials
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00017—Aspects relating to the protection of the environment
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00439—Physico-chemical properties of the materials not provided for elsewhere in C04B2111/00
    • C04B2111/00456—Odorless cements
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
    • C04B2111/00482—Coating or impregnation materials
    • C04B2111/00517—Coating or impregnation materials for masonry
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/20—Resistance against chemical, physical or biological attack
    • C04B2111/2092—Resistance against biological degradation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/02—Structural aspects of erasable programmable read-only memories
    • G11C2216/10—Floating gate memory cells with a single polysilicon layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54433—Marks applied to semiconductor devices or parts containing identification or tracking information
    • H01L2223/5444—Marks applied to semiconductor devices or parts containing identification or tracking information for electrical read out
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54473—Marks applied to semiconductor devices or parts for use after dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/1016—Shape being a cuboid
    • H01L2924/10162—Shape being a cuboid with a square active surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/50—Peripheral circuit region structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
AU2001232248A 2000-02-10 2001-02-08 Semiconductor integrated circuit device Abandoned AU2001232248A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000-038167 2000-02-10
JP2000038167A JP4191355B2 (en) 2000-02-10 2000-02-10 Semiconductor integrated circuit device
PCT/JP2001/000887 WO2001059789A1 (en) 2000-02-10 2001-02-08 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
AU2001232248A1 true AU2001232248A1 (en) 2001-08-20

Family

ID=18561945

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001232248A Abandoned AU2001232248A1 (en) 2000-02-10 2001-02-08 Semiconductor integrated circuit device

Country Status (9)

Country Link
US (3) US6611458B2 (en)
EP (1) EP1262996B1 (en)
JP (1) JP4191355B2 (en)
KR (2) KR100816924B1 (en)
CN (2) CN101916591B (en)
AU (1) AU2001232248A1 (en)
DE (1) DE60143643D1 (en)
TW (1) TW506135B (en)
WO (1) WO2001059789A1 (en)

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU9362998A (en) * 1997-11-28 1999-06-16 Asea Brown Boveri Ab Method and device for controlling the magnetic flux with an auxiliary winding ina rotating high voltage electric alternating current machine
US6829737B1 (en) * 2000-08-30 2004-12-07 Micron Technology, Inc. Method and system for storing device test information on a semiconductor device using on-device logic for determination of test results
JP4043703B2 (en) * 2000-09-04 2008-02-06 株式会社ルネサステクノロジ Semiconductor device, microcomputer, and flash memory
DE10120670B4 (en) * 2001-04-27 2008-08-21 Qimonda Ag Method for repairing hardware faults in memory chips
US7476925B2 (en) * 2001-08-30 2009-01-13 Micron Technology, Inc. Atomic layer deposition of metal oxide and/or low asymmetrical tunnel barrier interploy insulators
US6754108B2 (en) * 2001-08-30 2004-06-22 Micron Technology, Inc. DRAM cells with repressed floating gate memory, low tunnel barrier interpoly insulators
US7087954B2 (en) * 2001-08-30 2006-08-08 Micron Technology, Inc. In service programmable logic arrays with low tunnel barrier interpoly insulators
US7135734B2 (en) * 2001-08-30 2006-11-14 Micron Technology, Inc. Graded composition metal oxide tunnel barrier interpoly insulators
US7075829B2 (en) * 2001-08-30 2006-07-11 Micron Technology, Inc. Programmable memory address and decode circuits with low tunnel barrier interpoly insulators
US6963103B2 (en) * 2001-08-30 2005-11-08 Micron Technology, Inc. SRAM cells with repressed floating gate memory, low tunnel barrier interpoly insulators
JP3821697B2 (en) 2001-12-07 2006-09-13 エルピーダメモリ株式会社 Method for verifying semiconductor integrated circuit device and semiconductor integrated circuit device
US6943575B2 (en) * 2002-07-29 2005-09-13 Micron Technology, Inc. Method, circuit and system for determining burn-in reliability from wafer level burn-in
JP2004079138A (en) * 2002-08-22 2004-03-11 Renesas Technology Corp Nonvolatile semiconductor memory device
EP1453062B1 (en) * 2003-02-27 2006-06-28 STMicroelectronics S.r.l. Built-in testing methodology in flash memory
JP4108519B2 (en) * 2003-03-31 2008-06-25 エルピーダメモリ株式会社 Control circuit, semiconductor memory device, and control method
JP4314085B2 (en) * 2003-09-08 2009-08-12 パナソニック株式会社 Nonvolatile semiconductor memory device
KR100586841B1 (en) * 2003-12-15 2006-06-07 삼성전자주식회사 Method for controlling Variable Delay and Circuit for the same
JP4130634B2 (en) 2004-01-20 2008-08-06 松下電器産業株式会社 Semiconductor device
JP4124743B2 (en) 2004-01-21 2008-07-23 株式会社ルネサステクノロジ Phase change memory
JP2005327337A (en) * 2004-05-12 2005-11-24 Matsushita Electric Ind Co Ltd Semiconductor memory device
KR100591764B1 (en) * 2004-05-18 2006-06-22 삼성전자주식회사 Semiconductor memory device with signal lines wired across cell array
US7102371B1 (en) * 2004-05-19 2006-09-05 National Semiconductor Corporation Bilevel probe
KR100634439B1 (en) * 2004-10-26 2006-10-16 삼성전자주식회사 Fuse_free circuit, fuse_free semiconductor ic and non_volatile memory device, and fuse_free method
US7373573B2 (en) 2005-06-06 2008-05-13 International Business Machines Corporation Apparatus and method for using a single bank of eFuses to successively store testing data from multiple stages of testing
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US8110469B2 (en) 2005-08-30 2012-02-07 Micron Technology, Inc. Graded dielectric layers
JP2007172690A (en) * 2005-12-19 2007-07-05 Fujitsu Ltd Memory redundancy selection device, memory system, information processor, and redundancy selection method for memory cell
JP4764723B2 (en) * 2006-01-10 2011-09-07 ルネサスエレクトロニクス株式会社 Manufacturing method of semiconductor device
JP4675813B2 (en) 2006-03-31 2011-04-27 Ｏｋｉセミコンダクタ株式会社 Semiconductor memory device and manufacturing method thereof
JP2008181634A (en) * 2006-12-26 2008-08-07 Semiconductor Energy Lab Co Ltd Semiconductor device
US8055982B2 (en) * 2007-02-21 2011-11-08 Sigmatel, Inc. Error correction system and method
KR100843243B1 (en) * 2007-04-18 2008-07-02 삼성전자주식회사 Semiconductor memory device capable of optimizing signal transmission power and power initializing method thereof
KR100888885B1 (en) * 2007-04-19 2009-03-17 삼성전자주식회사 Lead frame and semiconductor apparatus having the same
JP2008300575A (en) 2007-05-30 2008-12-11 Oki Electric Ind Co Ltd Semiconductor memory device, and manufacturing method thereof
JP2009070943A (en) 2007-09-12 2009-04-02 Oki Semiconductor Co Ltd Semiconductor memory and manufacturing method thereof
KR100933839B1 (en) * 2008-03-10 2009-12-24 주식회사 하이닉스반도체 Nonvolatile Memory Device and Operation Method
JP2009239161A (en) * 2008-03-28 2009-10-15 Genusion Inc Nonvolatile semiconductor memory device and usage method thereof
KR100998945B1 (en) * 2008-09-05 2010-12-09 주식회사 하이닉스반도체 Method for fabricating non-volatile memory device
DE102008063429B4 (en) 2008-12-31 2015-03-26 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Setting the configuration of a multi-gate transistor by controlling individual lands
WO2012155143A1 (en) 2011-05-12 2012-11-15 Olive Medical Corporation Image sensor with tolerance optimizing interconnects
US9462234B2 (en) 2012-07-26 2016-10-04 DePuy Synthes Products, Inc. Camera system with minimal area monolithic CMOS image sensor
EP3690028A1 (en) * 2012-09-04 2020-08-05 Anthrogenesis Corporation Methods of tissue generation
KR102044827B1 (en) * 2012-10-17 2019-11-15 삼성전자주식회사 Data loading circuit and semiconductor memory device including the same
CN105228503B (en) * 2013-03-15 2017-11-07 德普伊新特斯产品公司 Minimize the quantity of imaging sensor input/output and conductor in endoscopic applications
US10517469B2 (en) 2013-03-15 2019-12-31 DePuy Synthes Products, Inc. Image sensor synchronization without input clock and data transmission clock
US9270174B2 (en) * 2013-05-12 2016-02-23 Freescale Semiconductor, Inc. Integrated circuit power management module
CN104409104B (en) * 2014-10-30 2018-02-06 上海华虹宏力半导体制造有限公司 The verification method of chip-stored unit scrambler address
CN104616698A (en) * 2015-01-28 2015-05-13 山东华翼微电子技术股份有限公司 Method for sufficiently utilizing memory redundancy unit
JP6097775B2 (en) * 2015-02-16 2017-03-15 力晶科技股▲ふん▼有限公司 Semiconductor memory device and semiconductor integrated circuit device
US9343156B1 (en) * 2015-06-25 2016-05-17 Sandisk Technologies Inc. Balancing programming speeds of memory cells in a 3D stacked memory
JP7282749B2 (en) * 2018-04-19 2023-05-29 ソニーセミコンダクタソリューションズ株式会社 Non-volatile memory circuit
KR20210145413A (en) * 2020-05-25 2021-12-02 에스케이하이닉스 주식회사 Memory device

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60201599A (en) 1984-03-26 1985-10-12 Hitachi Ltd Semiconductor integrated circuit device
JPS61123100A (en) * 1984-11-20 1986-06-10 Fujitsu Ltd Semiconductor memory device
EP0225960B1 (en) * 1985-12-07 1991-03-20 Deutsche ITT Industries GmbH Cmos inverter chain
US4794597A (en) * 1986-03-28 1988-12-27 Mitsubishi Denki Kabushiki Kaisha Memory device equipped with a RAS circuit
US5089433A (en) * 1988-08-08 1992-02-18 National Semiconductor Corporation Bipolar field-effect electrically erasable programmable read only memory cell and method of manufacture
CA2022368C (en) * 1989-07-31 1996-11-05 Ohsawa Ship Technologies Research Institute Corporation Wave making resistance suppressing means in ship and ship provided therewith
GB8926004D0 (en) * 1989-11-17 1990-01-10 Inmos Ltd Repairable memory circuit
JPH03179780A (en) * 1989-12-07 1991-08-05 Fujitsu Ltd Semiconductor device
US5278839A (en) * 1990-04-18 1994-01-11 Hitachi, Ltd. Semiconductor integrated circuit having self-check and self-repair capabilities
JP3083547B2 (en) * 1990-07-12 2000-09-04 株式会社日立製作所 Semiconductor integrated circuit device
JPH05114300A (en) * 1991-05-21 1993-05-07 Citizen Watch Co Ltd Semiconductor memory device
US5278439A (en) * 1991-08-29 1994-01-11 Ma Yueh Y Self-aligned dual-bit split gate (DSG) flash EEPROM cell
JPH05298898A (en) * 1992-04-14 1993-11-12 Toshiba Corp Nonvolatile semiconductor memory
JPH05314789A (en) 1992-05-14 1993-11-26 Fujitsu Ltd Redundant address storage circuit
JP2596695B2 (en) 1993-05-07 1997-04-02 インターナショナル・ビジネス・マシーンズ・コーポレイション EEPROM
JP3212421B2 (en) 1993-09-20 2001-09-25 富士通株式会社 Nonvolatile semiconductor memory device
US5466231A (en) * 1993-11-04 1995-11-14 Merocel Corporation Laminated sponge device
JPH07287994A (en) 1994-04-19 1995-10-31 Mitsubishi Electric Corp Semiconductor memory and its manufacturing method
KR0126101B1 (en) * 1994-07-07 1997-12-26 김주용 Forming method of repair mask
KR0161399B1 (en) * 1995-03-13 1998-12-01 김광호 Non-volatile memory device & method of making thereof
US5765544A (en) * 1995-06-05 1998-06-16 Vigansky, Jr.; Charles E. Flow-through humidifier for mobile home furnace
US6166293A (en) * 1996-07-18 2000-12-26 The Salk Institute For Biological Studies Method of increasing growth and yield in plants
JPH10149694A (en) * 1996-11-19 1998-06-02 Toshiba Microelectron Corp Semiconductor memory and data rewriting circuit
US5949703A (en) * 1996-12-26 1999-09-07 Kabushiki Kaisha Toshiba Semiconductor memory device in which data in programmable ROM can be apparently rewritten
JP3519583B2 (en) 1997-09-19 2004-04-19 株式会社東芝 Nonvolatile semiconductor memory device and method of manufacturing the same
US6005270A (en) * 1997-11-10 1999-12-21 Sony Corporation Semiconductor nonvolatile memory device and method of production of same
JPH11197652A (en) 1998-01-06 1999-07-27 Sanden Corp Water purifying and sterilizing apparatus
JP2000123591A (en) * 1998-10-16 2000-04-28 Fujitsu Ltd Non-volatile semiconductor memory
CN1691338A (en) * 1999-02-01 2005-11-02 株式会社日立制作所 Nonvolatile memory element

Also Published As

Publication number Publication date
TW506135B (en) 2002-10-11
US6894944B2 (en) 2005-05-17
CN100590739C (en) 2010-02-17
US20050152186A1 (en) 2005-07-14
EP1262996A4 (en) 2007-06-27
CN101916591B (en) 2014-05-07
DE60143643D1 (en) 2011-01-27
US20010019499A1 (en) 2001-09-06
WO2001059789A1 (en) 2001-08-16
KR100817343B1 (en) 2008-03-27
KR20020080340A (en) 2002-10-23
EP1262996B1 (en) 2010-12-15
JP4191355B2 (en) 2008-12-03
EP1262996A1 (en) 2002-12-04
KR20070108570A (en) 2007-11-12
CN1398407A (en) 2003-02-19
KR100816924B1 (en) 2008-03-26
CN101916591A (en) 2010-12-15
JP2001229690A (en) 2001-08-24
US20040004879A1 (en) 2004-01-08
US6611458B2 (en) 2003-08-26
US7149113B2 (en) 2006-12-12

Similar Documents

Publication Publication Date Title
AU2001232248A1 (en) Semiconductor integrated circuit device
AU2000224587A1 (en) Semiconductor device
AU2001236028A1 (en) Semiconductor device
AU2222101A (en) Semiconductor device
EP1220450B8 (en) Semiconductor integrated circuit
AU2002318809A1 (en) Integrated circuit device
AU2001234973A1 (en) Semiconductor devices
EP1391991A4 (en) Integrated circuit device
AU2002247383A1 (en) In-street integrated circuit wafer via
SG99939A1 (en) Semiconductor device
EP1231640A4 (en) Semiconductor device
GB2373634B (en) Semiconductor device
AU2002316979A1 (en) Semiconductor device
GB2372601B (en) Semiconductor integrated circuit
GB2370916B (en) Semiconductor device
GB0003302D0 (en) Semiconductor devices
GB2365621B (en) Semiconductor device
GB0029162D0 (en) Integrated circuit device
AU2000274531A1 (en) Semiconductor device
SG109474A1 (en) Semiconductor device
GB2370687B (en) An integrated circuit package
EP1209752A4 (en) Semiconductor device
AU2001216493A1 (en) Semiconductor device
AU2000238421A1 (en) Semiconductor device
AU2001280684A1 (en) Vertically integrated chip on chip circuit stack