FR2579023B1 - Composant semiconducteur a tenue en tension amelioree par sillons peripheriques multiples - Google Patents

Composant semiconducteur a tenue en tension amelioree par sillons peripheriques multiples

Info

Publication number
FR2579023B1
FR2579023B1 FR8503629A FR8503629A FR2579023B1 FR 2579023 B1 FR2579023 B1 FR 2579023B1 FR 8503629 A FR8503629 A FR 8503629A FR 8503629 A FR8503629 A FR 8503629A FR 2579023 B1 FR2579023 B1 FR 2579023B1
Authority
FR
France
Prior art keywords
semiconductor component
voltage holding
peripheral grooves
multiple peripheral
improved voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8503629A
Other languages
English (en)
Other versions
FR2579023A1 (fr
Inventor
Robert Pezzani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SILICIUM SEMICONDUCTEUR SSC
Original Assignee
SILICIUM SEMICONDUCTEUR SSC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SILICIUM SEMICONDUCTEUR SSC filed Critical SILICIUM SEMICONDUCTEUR SSC
Priority to FR8503629A priority Critical patent/FR2579023B1/fr
Publication of FR2579023A1 publication Critical patent/FR2579023A1/fr
Application granted granted Critical
Publication of FR2579023B1 publication Critical patent/FR2579023B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
FR8503629A 1985-03-12 1985-03-12 Composant semiconducteur a tenue en tension amelioree par sillons peripheriques multiples Expired FR2579023B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8503629A FR2579023B1 (fr) 1985-03-12 1985-03-12 Composant semiconducteur a tenue en tension amelioree par sillons peripheriques multiples

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8503629A FR2579023B1 (fr) 1985-03-12 1985-03-12 Composant semiconducteur a tenue en tension amelioree par sillons peripheriques multiples

Publications (2)

Publication Number Publication Date
FR2579023A1 FR2579023A1 (fr) 1986-09-19
FR2579023B1 true FR2579023B1 (fr) 1988-06-24

Family

ID=9317117

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8503629A Expired FR2579023B1 (fr) 1985-03-12 1985-03-12 Composant semiconducteur a tenue en tension amelioree par sillons peripheriques multiples

Country Status (1)

Country Link
FR (1) FR2579023B1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9412880B2 (en) 2004-10-21 2016-08-09 Vishay-Siliconix Schottky diode with improved surge capability
US9419092B2 (en) 2005-03-04 2016-08-16 Vishay-Siliconix Termination for SiC trench devices
US9472403B2 (en) 2005-03-04 2016-10-18 Siliconix Technology C.V. Power semiconductor switch with plurality of trenches
US9496421B2 (en) 2004-10-21 2016-11-15 Siliconix Technology C.V. Solderable top metal for silicon carbide semiconductor devices

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8368165B2 (en) 2005-10-20 2013-02-05 Siliconix Technology C. V. Silicon carbide Schottky diode
KR101193453B1 (ko) 2006-07-31 2012-10-24 비쉐이-실리코닉스 실리콘 카바이드 쇼트키 다이오드를 위한 몰리브덴 장벽 금속 및 제조방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH517379A (de) * 1971-06-18 1971-12-31 Transistor Ag Halbleitervorrichtung
GB2102202A (en) * 1981-07-17 1983-01-26 Westinghouse Brake & Signal Semiconductor device passivation

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9412880B2 (en) 2004-10-21 2016-08-09 Vishay-Siliconix Schottky diode with improved surge capability
US9496421B2 (en) 2004-10-21 2016-11-15 Siliconix Technology C.V. Solderable top metal for silicon carbide semiconductor devices
US9419092B2 (en) 2005-03-04 2016-08-16 Vishay-Siliconix Termination for SiC trench devices
US9472403B2 (en) 2005-03-04 2016-10-18 Siliconix Technology C.V. Power semiconductor switch with plurality of trenches

Also Published As

Publication number Publication date
FR2579023A1 (fr) 1986-09-19

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Legal Events

Date Code Title Description
ST Notification of lapse