IT1198145B - Componente a semiconduttori - Google Patents
Componente a semiconduttoriInfo
- Publication number
- IT1198145B IT1198145B IT22418/86A IT2241886A IT1198145B IT 1198145 B IT1198145 B IT 1198145B IT 22418/86 A IT22418/86 A IT 22418/86A IT 2241886 A IT2241886 A IT 2241886A IT 1198145 B IT1198145 B IT 1198145B
- Authority
- IT
- Italy
- Prior art keywords
- semiconductor component
- semiconductor
- component
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53271—Conductive materials containing semiconductor material, e.g. polysilicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/905—Plural dram cells share common contact or common trench
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/908—Dram configuration with transistors and capacitors of pairs of cells along a straight line between adjacent bit lines
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19853542166 DE3542166A1 (de) | 1985-11-29 | 1985-11-29 | Halbleiterbauelement |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8622418A0 IT8622418A0 (it) | 1986-11-21 |
IT1198145B true IT1198145B (it) | 1988-12-21 |
Family
ID=6287125
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT22418/86A IT1198145B (it) | 1985-11-29 | 1986-11-21 | Componente a semiconduttori |
Country Status (4)
Country | Link |
---|---|
US (1) | US4879586A (it) |
DE (1) | DE3542166A1 (it) |
FR (1) | FR2591037B1 (it) |
IT (1) | IT1198145B (it) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4119904A1 (de) * | 1991-06-17 | 1992-12-24 | Telefunken Electronic Gmbh | Halbleiteranordnung |
US5192707A (en) * | 1991-07-31 | 1993-03-09 | Sgs-Thomson Microelectronics, Inc. | Method of forming isolated regions of oxide |
DE4410354C2 (de) * | 1994-03-25 | 1996-02-15 | Semikron Elektronik Gmbh | Leistungshalbleiterbauelement |
US5747882A (en) * | 1996-11-07 | 1998-05-05 | Advanced Micro Devices, Inc. | Device including means for preventing tungsten silicide lifting, and method of fabrication thereof |
CN100407441C (zh) * | 2003-09-25 | 2008-07-30 | 松下电器产业株式会社 | 半导体器件及其制造方法 |
JP5195186B2 (ja) * | 2008-09-05 | 2013-05-08 | 三菱電機株式会社 | 半導体装置の製造方法 |
US8884378B2 (en) | 2010-11-03 | 2014-11-11 | Infineon Technologies Ag | Semiconductor device and a method for manufacturing a semiconductor device |
CN113178388B (zh) * | 2021-03-31 | 2023-04-21 | 青岛惠科微电子有限公司 | 耐高压芯片的制造方法和耐高压芯片 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1211354A (en) * | 1966-12-01 | 1970-11-04 | Gen Electric | Improvements relating to passivated semiconductor devices |
JPS4979782A (it) * | 1972-12-08 | 1974-08-01 | ||
JPS6022497B2 (ja) * | 1974-10-26 | 1985-06-03 | ソニー株式会社 | 半導体装置 |
JPS6041458B2 (ja) * | 1975-04-21 | 1985-09-17 | ソニー株式会社 | 半導体装置の製造方法 |
DE2632647A1 (de) * | 1976-07-20 | 1978-01-26 | Siemens Ag | Halbleiterbauelement mit passivierender schutzschicht |
DE2700463A1 (de) * | 1977-01-07 | 1978-07-13 | Siemens Ag | Verfahren zum passivieren von halbleiterelementen |
US4161744A (en) * | 1977-05-23 | 1979-07-17 | Varo Semiconductor, Inc. | Passivated semiconductor device and method of making same |
DE2840776A1 (de) * | 1978-09-19 | 1980-03-27 | Siemens Ag | Halbleiterbauelement mit passivierender schutzschicht |
JPS5936430B2 (ja) * | 1980-01-17 | 1984-09-04 | 株式会社東芝 | 半導体装置 |
DE3021175A1 (de) * | 1980-06-04 | 1981-12-10 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum passivieren von siliciumbauelementen |
US4420765A (en) * | 1981-05-29 | 1983-12-13 | Rca Corporation | Multi-layer passivant system |
BR8203630A (pt) * | 1981-06-29 | 1983-06-14 | Westinghouse Electric Corp | Dispositivo semicondutor processo de preparacao de uma pluralidade de dispositivos semicondutores apassivados com vidro |
US4420762A (en) * | 1982-02-01 | 1983-12-13 | Techsonic Industries, Inc. | Chart recorder |
US4580156A (en) * | 1983-12-30 | 1986-04-01 | At&T Bell Laboratories | Structured resistive field shields for low-leakage high voltage devices |
JPS61114574A (ja) * | 1984-11-09 | 1986-06-02 | Hitachi Ltd | 半導体装置 |
-
1985
- 1985-11-29 DE DE19853542166 patent/DE3542166A1/de active Granted
-
1986
- 1986-11-05 US US06/927,492 patent/US4879586A/en not_active Expired - Lifetime
- 1986-11-21 IT IT22418/86A patent/IT1198145B/it active
- 1986-11-27 FR FR868616562A patent/FR2591037B1/fr not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE3542166A1 (de) | 1987-06-04 |
FR2591037A1 (fr) | 1987-06-05 |
IT8622418A0 (it) | 1986-11-21 |
US4879586A (en) | 1989-11-07 |
FR2591037B1 (fr) | 1991-06-21 |
DE3542166C2 (it) | 1993-05-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19971127 |