FR2578368B1 - Commutateur a semi-conducteur a haute tension - Google Patents

Commutateur a semi-conducteur a haute tension

Info

Publication number
FR2578368B1
FR2578368B1 FR8602988A FR8602988A FR2578368B1 FR 2578368 B1 FR2578368 B1 FR 2578368B1 FR 8602988 A FR8602988 A FR 8602988A FR 8602988 A FR8602988 A FR 8602988A FR 2578368 B1 FR2578368 B1 FR 2578368B1
Authority
FR
France
Prior art keywords
high voltage
semiconductor switch
voltage semiconductor
switch
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR8602988A
Other languages
English (en)
Other versions
FR2578368A1 (fr
Inventor
George M Conrad
Kenneth M Smalley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of FR2578368A1 publication Critical patent/FR2578368A1/fr
Application granted granted Critical
Publication of FR2578368B1 publication Critical patent/FR2578368B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
FR8602988A 1985-03-04 1986-03-04 Commutateur a semi-conducteur a haute tension Expired - Fee Related FR2578368B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US70793185A 1985-03-04 1985-03-04

Publications (2)

Publication Number Publication Date
FR2578368A1 FR2578368A1 (fr) 1986-09-05
FR2578368B1 true FR2578368B1 (fr) 1992-08-14

Family

ID=24843724

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8602988A Expired - Fee Related FR2578368B1 (fr) 1985-03-04 1986-03-04 Commutateur a semi-conducteur a haute tension

Country Status (6)

Country Link
JP (1) JPS61205020A (fr)
AU (1) AU588020B2 (fr)
CA (1) CA1274581A (fr)
DE (1) DE3607046A1 (fr)
FR (1) FR2578368B1 (fr)
GB (1) GB2172161B (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU588020B2 (en) * 1985-03-04 1989-09-07 Raytheon Company High voltage solid state switch
US5227781A (en) * 1991-03-01 1993-07-13 Litton Systems, Inc. Mosfet switch matrix
DE10255602A1 (de) * 2002-11-28 2004-06-24 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Halbleiterschaltungsanordnung zum Steuern einer hohen Spannung oder eines Stromes großer Stromstärke
US7449801B2 (en) 2002-11-28 2008-11-11 Infineon Technologies Ag Semiconductor circuit arrangement for controlling a high voltage or a current of high current intensity

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3710147A (en) * 1971-06-29 1973-01-09 Plessey Handel Investment Ag Transistor switches for high voltage applications
SE360227B (fr) * 1972-02-01 1973-09-17 Asea Ab
SE369257B (fr) * 1972-12-08 1974-08-12 Asea Ab
BE798049A (fr) * 1973-04-11 1973-10-11 Acec Dispositif de commande de thyristors ou autres elements semiconducteurs
JPS57166827A (en) * 1981-04-07 1982-10-14 Nissan Motor Electronic part power source supply control device
CH659528A5 (de) * 1982-03-16 1987-01-30 V Elektrotech I V I Lenina Einrichtung zur uebertragung und verteilung einer lichtstrahlung.
JPS5911772A (ja) * 1982-07-12 1984-01-21 Kansai Electric Power Co Inc:The 光点弧サイリスタの過電圧保護装置
JPS59117824A (ja) * 1982-12-24 1984-07-07 Toshiba Corp オンゲ−ト回路
DE3340546A1 (de) * 1983-11-09 1985-05-15 Siemens AG, 1000 Berlin und 8000 München Gitterimpulsmodulator fuer eine mit einem steuergitter ausgeruestete hochleistungs-wanderfeldroehre
DE3483834D1 (de) * 1983-12-05 1991-02-07 Mitsubishi Electric Corp Hochspannungsthyristorkonverter.
AU588020B2 (en) * 1985-03-04 1989-09-07 Raytheon Company High voltage solid state switch
US4697096A (en) * 1985-03-04 1987-09-29 Raytheon Company High voltage solid state switch

Also Published As

Publication number Publication date
GB2172161A (en) 1986-09-10
JPS61205020A (ja) 1986-09-11
GB8604608D0 (en) 1986-04-03
DE3607046A1 (de) 1986-12-04
GB2172161B (en) 1989-01-18
CA1274581A (fr) 1990-09-25
AU5371786A (en) 1986-09-11
AU588020B2 (en) 1989-09-07
FR2578368A1 (fr) 1986-09-05

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Legal Events

Date Code Title Description
ST Notification of lapse