CA1274581A - Commutateur haute tension a semiconducteur - Google Patents

Commutateur haute tension a semiconducteur

Info

Publication number
CA1274581A
CA1274581A CA000502250A CA502250A CA1274581A CA 1274581 A CA1274581 A CA 1274581A CA 000502250 A CA000502250 A CA 000502250A CA 502250 A CA502250 A CA 502250A CA 1274581 A CA1274581 A CA 1274581A
Authority
CA
Canada
Prior art keywords
voltage
drive
circuit
transistor
coupled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CA000502250A
Other languages
English (en)
Inventor
George M. Conrad
Kenneth M. Smalley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Application granted granted Critical
Publication of CA1274581A publication Critical patent/CA1274581A/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches

Landscapes

  • Electronic Switches (AREA)
  • Radar Systems Or Details Thereof (AREA)
CA000502250A 1985-03-04 1986-02-19 Commutateur haute tension a semiconducteur Expired - Fee Related CA1274581A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US70793185A 1985-03-04 1985-03-04
US707,931 1985-03-04

Publications (1)

Publication Number Publication Date
CA1274581A true CA1274581A (fr) 1990-09-25

Family

ID=24843724

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000502250A Expired - Fee Related CA1274581A (fr) 1985-03-04 1986-02-19 Commutateur haute tension a semiconducteur

Country Status (6)

Country Link
JP (1) JPS61205020A (fr)
AU (1) AU588020B2 (fr)
CA (1) CA1274581A (fr)
DE (1) DE3607046A1 (fr)
FR (1) FR2578368B1 (fr)
GB (1) GB2172161B (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU588020B2 (en) * 1985-03-04 1989-09-07 Raytheon Company High voltage solid state switch
US5227781A (en) * 1991-03-01 1993-07-13 Litton Systems, Inc. Mosfet switch matrix
US7449801B2 (en) 2002-11-28 2008-11-11 Infineon Technologies Ag Semiconductor circuit arrangement for controlling a high voltage or a current of high current intensity
DE10255602A1 (de) * 2002-11-28 2004-06-24 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Halbleiterschaltungsanordnung zum Steuern einer hohen Spannung oder eines Stromes großer Stromstärke

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3710147A (en) * 1971-06-29 1973-01-09 Plessey Handel Investment Ag Transistor switches for high voltage applications
SE360227B (fr) * 1972-02-01 1973-09-17 Asea Ab
SE369257B (fr) * 1972-12-08 1974-08-12 Asea Ab
BE798049A (fr) * 1973-04-11 1973-10-11 Acec Dispositif de commande de thyristors ou autres elements semiconducteurs
JPS57166827A (en) * 1981-04-07 1982-10-14 Nissan Motor Electronic part power source supply control device
CH659528A5 (de) * 1982-03-16 1987-01-30 V Elektrotech I V I Lenina Einrichtung zur uebertragung und verteilung einer lichtstrahlung.
JPS5911772A (ja) * 1982-07-12 1984-01-21 Kansai Electric Power Co Inc:The 光点弧サイリスタの過電圧保護装置
JPS59117824A (ja) * 1982-12-24 1984-07-07 Toshiba Corp オンゲ−ト回路
DE3340546A1 (de) * 1983-11-09 1985-05-15 Siemens AG, 1000 Berlin und 8000 München Gitterimpulsmodulator fuer eine mit einem steuergitter ausgeruestete hochleistungs-wanderfeldroehre
DE3476306D1 (en) * 1983-12-05 1989-02-23 Mitsubishi Electric Corp High-voltage thyristor converter
US4697096A (en) * 1985-03-04 1987-09-29 Raytheon Company High voltage solid state switch
AU588020B2 (en) * 1985-03-04 1989-09-07 Raytheon Company High voltage solid state switch

Also Published As

Publication number Publication date
GB2172161A (en) 1986-09-10
GB8604608D0 (en) 1986-04-03
JPS61205020A (ja) 1986-09-11
AU5371786A (en) 1986-09-11
GB2172161B (en) 1989-01-18
FR2578368A1 (fr) 1986-09-05
DE3607046A1 (de) 1986-12-04
FR2578368B1 (fr) 1992-08-14
AU588020B2 (en) 1989-09-07

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Legal Events

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