KR880701022A - 반도체 스위치 - Google Patents

반도체 스위치

Info

Publication number
KR880701022A
KR880701022A KR870700597A KR870700597A KR880701022A KR 880701022 A KR880701022 A KR 880701022A KR 870700597 A KR870700597 A KR 870700597A KR 870700597 A KR870700597 A KR 870700597A KR 880701022 A KR880701022 A KR 880701022A
Authority
KR
South Korea
Prior art keywords
semiconductor switch
semiconductor
switch
Prior art date
Application number
KR870700597A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR880701022A publication Critical patent/KR880701022A/ko

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electronic Switches (AREA)
KR870700597A 1985-11-13 1987-07-09 반도체 스위치 KR880701022A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19853540250 DE3540250A1 (de) 1985-11-13 1985-11-13 Halbleiterschalter fuer hohe sperrspannungen
PCT/DE1986/000414 WO1987003141A1 (en) 1985-11-13 1986-10-15 Semiconductor switch for high inverse voltages

Publications (1)

Publication Number Publication Date
KR880701022A true KR880701022A (ko) 1988-04-13

Family

ID=6285883

Family Applications (1)

Application Number Title Priority Date Filing Date
KR870700597A KR880701022A (ko) 1985-11-13 1987-07-09 반도체 스위치

Country Status (4)

Country Link
JP (1) JPS63502787A (ko)
KR (1) KR880701022A (ko)
DE (1) DE3540250A1 (ko)
WO (1) WO1987003141A1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6854329B2 (en) 1996-01-31 2005-02-15 Hunter Engineering Company Wheel balancer with variation measurement

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3007119A (en) * 1959-11-04 1961-10-31 Westinghouse Electric Corp Modulating circuit and field effect semiconductor structure for use therein
US3274462A (en) * 1963-11-13 1966-09-20 Jr Keats A Pullen Structural configuration for fieldeffect and junction transistors
FR1485222A (fr) * 1965-07-01 1967-06-16 Siemens Ag Dispositif à semi-conducteurs
DE2147071A1 (de) * 1971-09-21 1973-03-29 Mueser Horst Prof Dr Rer Nat Elektronischer mikroschalter

Also Published As

Publication number Publication date
DE3540250A1 (de) 1987-05-14
JPS63502787A (ja) 1988-10-13
WO1987003141A1 (en) 1987-05-21

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Legal Events

Date Code Title Description
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid