KR880700472A - 열전자 유니폴라 트랜지스터 - Google Patents
열전자 유니폴라 트랜지스터Info
- Publication number
- KR880700472A KR880700472A KR1019860700621A KR860700621A KR880700472A KR 880700472 A KR880700472 A KR 880700472A KR 1019860700621 A KR1019860700621 A KR 1019860700621A KR 860700621 A KR860700621 A KR 860700621A KR 880700472 A KR880700472 A KR 880700472A
- Authority
- KR
- South Korea
- Prior art keywords
- thermoelectronic
- unipolar transistor
- unipolar
- transistor
- thermoelectronic unipolar
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/7606—Transistor-like structures, e.g. hot electron transistor [HET]; metal base transistor [MBT]
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US689845 | 1985-01-09 | ||
| US06/689,845 US4691215A (en) | 1985-01-09 | 1985-01-09 | Hot electron unipolar transistor with two-dimensional degenerate electron gas base with continuously graded composition compound emitter |
| PCT/US1985/002583 WO1986004184A1 (en) | 1985-01-09 | 1985-12-23 | Hot electron unipolar transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR880700472A true KR880700472A (ko) | 1988-03-15 |
| KR910004315B1 KR910004315B1 (ko) | 1991-06-25 |
Family
ID=24770103
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019860700621A KR910004315B1 (ko) | 1985-01-09 | 1985-12-23 | 열전자 유니폴라 트랜지스터 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US4691215A (ko) |
| EP (1) | EP0207968B1 (ko) |
| JP (1) | JPH07118531B2 (ko) |
| KR (1) | KR910004315B1 (ko) |
| CA (1) | CA1245775A (ko) |
| DE (1) | DE3578274D1 (ko) |
| HK (1) | HK98990A (ko) |
| SG (1) | SG77090G (ko) |
| WO (1) | WO1986004184A1 (ko) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61248561A (ja) * | 1985-04-25 | 1986-11-05 | インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション | 半導体構造体 |
| JPS62224969A (ja) * | 1986-03-27 | 1987-10-02 | Agency Of Ind Science & Technol | 半導体装置 |
| US4845541A (en) * | 1986-05-29 | 1989-07-04 | Regents Of The University Of Minnesota | Tunneling emitter bipolar transistor |
| US4833517A (en) * | 1987-04-27 | 1989-05-23 | International Business Machines Corporation | Theta device with improved base contact |
| EP0314836A1 (en) * | 1987-11-06 | 1989-05-10 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | Semiconductor device in particular a hot electron transistor |
| US4825265A (en) * | 1987-09-04 | 1989-04-25 | American Telephone And Telegraph Company At&T Bell Laboratories | Transistor |
| US4860064A (en) * | 1987-10-21 | 1989-08-22 | American Telephone And Telegraph Company At&T Bell Laboratories | Transistor comprising a 2-dimensional carrier gas collector situated between emitter and gate |
| US5091759A (en) * | 1989-10-30 | 1992-02-25 | Texas Instruments Incorporated | Heterostructure field effect transistor |
| US4912539A (en) * | 1988-08-05 | 1990-03-27 | The University Of Michigan | Narrow-band-gap base transistor structure with dual collector-base barrier including a graded barrier |
| US5331410A (en) * | 1991-04-26 | 1994-07-19 | Sumitomo Electric Industries, Ltd. | Field effect transistor having a sandwiched channel layer |
| US5352912A (en) * | 1991-11-13 | 1994-10-04 | International Business Machines Corporation | Graded bandgap single-crystal emitter heterojunction bipolar transistor |
| US5463275A (en) * | 1992-07-10 | 1995-10-31 | Trw Inc. | Heterojunction step doped barrier cathode emitter |
| US5268315A (en) * | 1992-09-04 | 1993-12-07 | Tektronix, Inc. | Implant-free heterojunction bioplar transistor integrated circuit process |
| KR100240629B1 (ko) * | 1997-08-30 | 2000-01-15 | 정선종 | 테라급 집적이 가능한 대전효과 트랜지스터 및 그 제조방법 |
| AU2001296104A1 (en) * | 2000-10-11 | 2002-04-22 | Timofei Timofeevich Kondratenko | Nonplanar semiconductor devices having closed region of spatial charge |
| US8143648B1 (en) * | 2006-08-11 | 2012-03-27 | Hrl Laboratories, Llc | Unipolar tunneling photodetector |
| CN107040062A (zh) * | 2017-05-26 | 2017-08-11 | 哈尔滨电气动力装备有限公司 | 屏蔽泵电动机转子护环结构 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4286275A (en) * | 1980-02-04 | 1981-08-25 | International Business Machines Corporation | Semiconductor device |
| JPS5946103B2 (ja) * | 1980-03-10 | 1984-11-10 | 日本電信電話株式会社 | トランジスタ |
| US4366493A (en) * | 1980-06-20 | 1982-12-28 | International Business Machines Corporation | Semiconductor ballistic transport device |
| US4396931A (en) * | 1981-06-12 | 1983-08-02 | International Business Machines Corporation | Tunnel emitter upper valley transistor |
| FR2520157B1 (fr) * | 1982-01-18 | 1985-09-13 | Labo Electronique Physique | Dispositif semi-conducteur du genre transistor a heterojonction(s) |
| US4910562A (en) * | 1982-04-26 | 1990-03-20 | International Business Machines Corporation | Field induced base transistor |
| CA1237824A (en) * | 1984-04-17 | 1988-06-07 | Takashi Mimura | Resonant tunneling semiconductor device |
| JPS61121358A (ja) * | 1984-11-19 | 1986-06-09 | Fujitsu Ltd | 高速半導体装置 |
-
1985
- 1985-01-09 US US06/689,845 patent/US4691215A/en not_active Expired - Lifetime
- 1985-12-23 WO PCT/US1985/002583 patent/WO1986004184A1/en active IP Right Grant
- 1985-12-23 KR KR1019860700621A patent/KR910004315B1/ko not_active IP Right Cessation
- 1985-12-23 EP EP86900581A patent/EP0207968B1/en not_active Expired - Lifetime
- 1985-12-23 DE DE8686900581T patent/DE3578274D1/de not_active Expired - Fee Related
- 1985-12-23 JP JP61500511A patent/JPH07118531B2/ja not_active Expired - Lifetime
-
1986
- 1986-01-08 CA CA000499207A patent/CA1245775A/en not_active Expired
-
1990
- 1990-09-19 SG SG770/90A patent/SG77090G/en unknown
- 1990-11-29 HK HK989/90A patent/HK98990A/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| SG77090G (en) | 1990-11-23 |
| KR910004315B1 (ko) | 1991-06-25 |
| CA1245775A (en) | 1988-11-29 |
| DE3578274D1 (de) | 1990-07-19 |
| US4691215A (en) | 1987-09-01 |
| EP0207968B1 (en) | 1990-06-13 |
| WO1986004184A1 (en) | 1986-07-17 |
| EP0207968A1 (en) | 1987-01-14 |
| HK98990A (en) | 1990-12-07 |
| JPS62501389A (ja) | 1987-06-04 |
| JPH07118531B2 (ja) | 1995-12-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| G160 | Decision to publish patent application | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20010531 Year of fee payment: 11 |
|
| LAPS | Lapse due to unpaid annual fee |