AU2001296104A1 - Nonplanar semiconductor devices having closed region of spatial charge - Google Patents

Nonplanar semiconductor devices having closed region of spatial charge

Info

Publication number
AU2001296104A1
AU2001296104A1 AU2001296104A AU9610401A AU2001296104A1 AU 2001296104 A1 AU2001296104 A1 AU 2001296104A1 AU 2001296104 A AU2001296104 A AU 2001296104A AU 9610401 A AU9610401 A AU 9610401A AU 2001296104 A1 AU2001296104 A1 AU 2001296104A1
Authority
AU
Australia
Prior art keywords
semiconductor devices
closed region
spatial charge
nonplanar semiconductor
nonplanar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001296104A
Inventor
Timofei Timofeevich Kondratenko
Timofei Yakovlevich Kondratenko
Lev Vasilievich Kozhitov
Vsevolod Valerievich Krapukhin
Nikolai Ivanovich Mishakin
Galina Georgievna Timoshina
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from RU2000125498/28A external-priority patent/RU2173917C1/en
Priority claimed from RU2000125500/28A external-priority patent/RU2173916C1/en
Priority claimed from RU2000129625/28A external-priority patent/RU2168800C1/en
Priority claimed from RU2000129626A external-priority patent/RU2168801C1/en
Application filed by Individual filed Critical Individual
Publication of AU2001296104A1 publication Critical patent/AU2001296104A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/864—Transit-time diodes, e.g. IMPATT, TRAPATT diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices
    • H10N80/10—Gunn-effect devices
    • H10N80/107—Gunn diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Magnetic Resonance Imaging Apparatus (AREA)
AU2001296104A 2000-10-11 2001-10-11 Nonplanar semiconductor devices having closed region of spatial charge Abandoned AU2001296104A1 (en)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
RU2000125498/28A RU2173917C1 (en) 2000-10-11 2000-10-11 Thyristor
RU2000125498 2000-10-11
RU2000125500/28A RU2173916C1 (en) 2000-10-11 2000-10-11 Bipolar transistor
RU2000125500 2000-10-11
RU2000129625 2000-11-28
RU2000129625/28A RU2168800C1 (en) 2000-11-28 2000-11-28 Transit-time microwave diode (design versions)
RU2000129626A RU2168801C1 (en) 2000-11-28 2000-11-28 Gunn-effect diode (design versions)
RU2000129626 2000-11-28
PCT/RU2001/000409 WO2002031884A1 (en) 2000-10-11 2001-10-11 Nonplanar semiconductor devices having closed region of spatial charge

Publications (1)

Publication Number Publication Date
AU2001296104A1 true AU2001296104A1 (en) 2002-04-22

Family

ID=27484462

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001296104A Abandoned AU2001296104A1 (en) 2000-10-11 2001-10-11 Nonplanar semiconductor devices having closed region of spatial charge

Country Status (2)

Country Link
AU (1) AU2001296104A1 (en)
WO (1) WO2002031884A1 (en)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2358937C3 (en) * 1973-11-27 1976-07-15 Licentia Gmbh THYRISTOR FOR HIGH VOLTAGE IN THE KILOVOLT RANGE
US5512776A (en) * 1984-07-13 1996-04-30 Texas Instruments Incorporated Interdigitated IMPATT devices
US4691215A (en) * 1985-01-09 1987-09-01 American Telephone And Telegraph Company Hot electron unipolar transistor with two-dimensional degenerate electron gas base with continuously graded composition compound emitter
SU1414238A1 (en) * 1986-04-16 1997-06-10 А.Ф. Монахов Semiconductor device
RU2024109C1 (en) * 1991-02-20 1994-11-30 Всероссийский электротехнический институт им.В.И.Ленина Heavy-power semiconductor device
SU1827144A3 (en) * 1991-05-07 1996-06-27 Товарищество с ограниченной ответственностью "КМК" Vertical bipolar transistor
RU2054213C1 (en) * 1993-02-24 1996-02-10 Василий Иванович Каневский Gunn-effect semiconductor device
RU2086051C1 (en) * 1995-06-26 1997-07-27 Василий Иванович Каневский Gun-effect high-frequency device

Also Published As

Publication number Publication date
WO2002031884A1 (en) 2002-04-18

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