JP2013533638A5 - - Google Patents

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JP2013533638A5
JP2013533638A5 JP2013521757A JP2013521757A JP2013533638A5 JP 2013533638 A5 JP2013533638 A5 JP 2013533638A5 JP 2013521757 A JP2013521757 A JP 2013521757A JP 2013521757 A JP2013521757 A JP 2013521757A JP 2013533638 A5 JP2013533638 A5 JP 2013533638A5
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opening
region
forming
contact
conductive
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JP2013533638A (ja
JP5801889B2 (ja
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JP2013521757A 2010-07-23 2010-10-13 裏面コンタクトがビアファースト構造体又はビアミドル構造体で接続された超小型電子素子 Active JP5801889B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/842,651 US8796135B2 (en) 2010-07-23 2010-07-23 Microelectronic elements with rear contacts connected with via first or via middle structures
US12/842,651 2010-07-23
PCT/US2010/052458 WO2012011928A1 (en) 2010-07-23 2010-10-13 Microelectronic elements with rear contacts connected with via first or via middle structures

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JP2013533638A JP2013533638A (ja) 2013-08-22
JP2013533638A5 true JP2013533638A5 (enExample) 2014-06-19
JP5801889B2 JP5801889B2 (ja) 2015-10-28

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JP2013521757A Active JP5801889B2 (ja) 2010-07-23 2010-10-13 裏面コンタクトがビアファースト構造体又はビアミドル構造体で接続された超小型電子素子

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US (1) US8796135B2 (enExample)
EP (1) EP2596520B1 (enExample)
JP (1) JP5801889B2 (enExample)
KR (1) KR101597341B1 (enExample)
CN (1) CN103109349B (enExample)
BR (1) BR112013001769A2 (enExample)
TW (1) TWI502712B (enExample)
WO (1) WO2012011928A1 (enExample)

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