KR100618837B1 - 웨이퍼 레벨 패키지를 위한 얇은 웨이퍼들의 스택을형성하는 방법 - Google Patents
웨이퍼 레벨 패키지를 위한 얇은 웨이퍼들의 스택을형성하는 방법 Download PDFInfo
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- KR100618837B1 KR100618837B1 KR1020040046558A KR20040046558A KR100618837B1 KR 100618837 B1 KR100618837 B1 KR 100618837B1 KR 1020040046558 A KR1020040046558 A KR 1020040046558A KR 20040046558 A KR20040046558 A KR 20040046558A KR 100618837 B1 KR100618837 B1 KR 100618837B1
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Abstract
Description
Claims (23)
- 제1범프가 앞면으로부터 내부로 연장되게 박힌 제1웨이퍼를 준비하는 단계;상기 제1웨이퍼의 앞면 상에 딱딱한 판재의 지지부를 부착하는 단계;상기 제1범프의 밑단이 상기 제1웨이퍼의 뒷면에 돌출되게 상기 제1웨이퍼의 두께를 얇게 줄이는 단계;제2범프가 앞면으로부터 뒷면으로 관통하게 박힌 얇은 두께의 제2웨이퍼를 준비하는 단계;상기 제1범프의 돌출된 밑단이 상기 제2범프 상에 전기적으로 연결되게 상기 얇은 두께의 제1웨이퍼를 상기 제2웨이퍼 상에 정렬하고 접합하는 단계; 및상기 얇은 두께의 제1웨이퍼로부터 상기 지지부를 제거하는 단계를 포함하는 것을 특징으로 하는 웨이퍼들의 스택을 형성하는 방법.
- 제1항에 있어서,상기 지지부는 유리 판재로 도입되는 것을 특징으로 하는 웨이퍼들의 스택을 형성하는 방법.
- 제1항에 있어서,상기 지지부를 상기 제1웨이퍼 상에 부착시키는 발포성 접착 테이프를 상기 제1웨이퍼의 앞면에 부착하는 단계를 더 포함하는 것을 특징으로 하는 웨이퍼들의 스택을 형성하는 방법.
- 제3항에 있어서,상기 지지부를 제거하는 단계는 상기 발포성 접착 테이프에 열을 인가하거나 자외선(UV)을 조사하여 상기 발포성 접착 테이프를 제거하는 단계를 포함하는 것을 특징으로 하는 웨이퍼들의 스택을 형성하는 방법.
- 제1항에 있어서, 상기 제1웨이퍼의 두께를 얇게 줄이는 단계는상기 지지부에 반대되는 상기 제1웨이퍼의 뒷면을 상기 제1범프의 밑단 표면이 노출되게 그라인딩(grinding)하는 단계; 및상기 그라인딩된 상기 제1웨이퍼의 뒷면을 선택적으로 식각하여 상기 제1범프의 밑단이 상기 제1웨이퍼의 뒷면에 돌출되게 하는 단계를 포함하는 것을 특징으로 하는 웨이퍼들의 스택을 형성하는 방법.
- 제1항에 있어서, 상기 제2웨이퍼 상에 정렬하고 접합하는 단계는상기 제2웨이퍼와 상기 제1웨이퍼 사이에 이방 도전성 필름(ACF)을 부착하는 단계; 및상기 제2웨이퍼를 상기 제1웨이퍼에 압착 접합하는 단계를 포함하는 것을 특징으로 하는 웨이퍼들의 스택을 형성하는 방법.
- 제1항에 있어서, 상기 제2웨이퍼 상에 정렬하고 접합하는 단계는상기 제2웨이퍼 상에 이방 도전성 페이스트(ACP)를 도포하는 단계; 및상기 제2웨이퍼를 상기 제1웨이퍼에 정렬 압착한 후 상기 이방 도전성 페이스트를 큐어링(curing)하여 접합하는 단계를 포함하는 것을 특징으로 하는 웨이퍼들의 스택을 형성하는 방법.
- 제1항에 있어서, 상기 제2웨이퍼 상에 정렬하고 접합하는 단계는상기 제1범프의 밑단에 대향되는 상기 제2범프 상에 솔더 페이스트(solder paste)를 선택적으로 도포하는 단계; 및상기 솔더 페이스트 도포 부분에 상기 제1범프의 밑단을 접촉시키고 상기 도포된 솔더 페이스트를 리플로우(reflow)시켜 상기 제1범프와 상기 제2범프를 전기적으로 연결하고 접합하는 전기적 접합부를 형성하는 단계를 포함하는 것을 특징으로 하는 웨이퍼들의 스택을 형성하는 방법.
- 제8항에 있어서,상기 솔더 페이스트는 스크린 프린팅(screen printing)으로 상기 제2웨이퍼 상에 선택적으로 도포되는 것을 특징으로 하는 웨이퍼들의 스택을 형성하는 방법.
- 제1범프가 앞면으로부터 뒷면으로 관통하게 박힌 얇은 두께의 제1웨이퍼를 준비하는 단계;제2범프가 앞면으로부터 내부로 연장되게 박힌 제2웨이퍼를 준비하는 단계;상기 제2웨이퍼의 앞면 상에 제1지지부를 부착하는 단계;상기 제2범프의 밑단이 상기 제2웨이퍼의 뒷면에 돌출되게 상기 제2웨이퍼의 두께를 얇게 줄이는 단계;상기 얇은 두께의 제2웨이퍼의 뒷면 상에 딱딱한 판재의 제2지지부를 부착하는 단계;상기 제2범프의 상단이 노출되게 상기 제1지지부를 상기 제2웨이퍼로부터 제거하는 단계;상기 제1범프가 상기 제2범프의 상단에 전기적으로 연결되게 상기 얇은 두께의 제1웨이퍼를 상기 제2웨이퍼 상에 정렬하고 접합하는 단계; 및상기 제2범프의 밑단이 노출되게 상기 제2웨이퍼로부터 상기 제2지지부를 제거하는 단계를 포함하는 것을 특징으로 하는 웨이퍼들의 스택을 형성하는 방법.
- 제10항에 있어서,상기 제1지지부를 상기 제2웨이퍼 상에 부착시키는 제1발포성 접착 테이프를 상기 제2웨이퍼의 앞면에 부착하는 단계를 더 포함하는 것을 특징으로 하는 웨이퍼들의 스택을 형성하는 방법.
- 제11항에 있어서,상기 제1지지부를 제거하는 단계는 상기 제1발포성 접착 테이프에 열을 인가하거나 자외선(UV)을 조사하여 상기 제1발포성 접착 테이프를 제거하는 단계를 포함하는 것을 특징으로 하는 웨이퍼들의 스택을 형성하는 방법.
- 제10항에 있어서,상기 제2지지부를 상기 제2웨이퍼 상에 부착시키는 제2발포성 접착 테이프를 상기 제2웨이퍼의 뒷면에 부착하는 단계를 더 포함하는 것을 특징으로 하는 웨이퍼들의 스택을 형성하는 방법.
- 제13항에 있어서,상기 제2지지부를 제거하는 단계는 상기 제2발포성 접착 테이프에 열을 인가하거나 자외선(UV)을 조사하여 상기 제2발포성 접착 테이프를 제거하는 단계를 포함하는 것을 특징으로 하는 웨이퍼들의 스택을 형성하는 방법.
- 제10항에 있어서, 상기 제2웨이퍼의 두께를 얇게 줄이는 단계는상기 제1지지부에 반대되는 상기 제2웨이퍼의 뒷면을 상기 제2범프의 밑단 표면이 노출되게 그라인딩(grinding)하는 단계; 및상기 그라인딩된 상기 제2웨이퍼의 뒷면을 선택적으로 식각하여 상기 제2범프의 밑단이 상기 제2웨이퍼의 뒷면에 돌출되게 하는 단계를 포함하는 것을 특징으로 하는 웨이퍼들의 스택을 형성하는 방법.
- 제1범프가 앞면으로부터 내부로 연장되게 박힌 제1웨이퍼를 준비하는 단계;상기 제1웨이퍼의 앞면 상에 딱딱한 판재의 제1지지부를 부착하는 단계;상기 제1범프의 밑단이 상기 제1웨이퍼의 뒷면에 돌출되게 상기 제1웨이퍼의 두께를 얇게 줄이는 단계;제2범프가 앞면으로부터 내부로 연장되게 박힌 제2웨이퍼를 준비하는 단계;상기 제2웨이퍼의 앞면 상에 제2지지부를 부착하는 단계;상기 제2범프의 밑단이 상기 제2웨이퍼의 뒷면에 돌출되게 상기 제2웨이퍼의 두께를 얇게 줄이는 단계;상기 얇은 두께의 제2웨이퍼의 뒷면 상에 딱딱한 판재의 제3지지부를 부착하는 단계;상기 제2범프의 상단이 노출되게 상기 제2지지부를 상기 제2웨이퍼로부터 제거하는 단계;상기 제1범프가 상기 제2범프의 상단에 전기적으로 연결되게 상기 얇은 두께의 제1웨이퍼를 상기 제2웨이퍼 상에 정렬하고 접합하는 단계; 및상기 제1범프의 상단이 노출되게 상기 제1웨이퍼로부터 상기 제1지지부를 제거하고 상기 제2범프의 밑단이 노출되게 상기 제2웨이퍼로부터 상기 제3지지부를 제거하는 단계를 포함하는 것을 특징으로 하는 웨이퍼들의 스택을 형성하는 방법.
- 제16항에 있어서,어느 하나의 상기 지지부는 투명한 유리 판재로 도입되는 것을 특징으로 하는 웨이퍼들의 스택을 형성하는 방법.
- 제16항에 있어서,어느 하나의 상기 지지부는 발포성 접착 테이프에 의해서 상기 웨이퍼에 부착되는 것을 특징으로 하는 웨이퍼들의 스택을 형성하는 방법.
- 제18항에 있어서,상기 발포성 접착 테이프에 의해 부착된 상기 지지부는 상기 발포성 접착 테이프에 열을 인가하거나 자외선(UV)을 조사하여 상기 발포성 접착 테이프를 제거함에 따라 제거되는 것을 특징으로 하는 웨이퍼들의 스택을 형성하는 방법.
- 제16항에 있어서, 상기 웨이퍼의 두께를 얇게 줄이는 단계는상기 지지부에 반대되는 상기 웨이퍼의 뒷면을 상기 범프의 밑단 표면이 노출되게 그라인딩(grinding)하는 단계; 및상기 그라인딩된 상기 웨이퍼의 뒷면을 선택적으로 식각하여 상기 범프의 밑단이 상기 웨이퍼의 뒷면에 돌출되게 하는 단계를 포함하는 것을 특징으로 하는 웨이퍼들의 스택을 형성하는 방법.
- 제1범프가 앞면으로부터 뒷면으로 관통하게 박혀 있고 앞면에 딱딱한 판재의 제1지지부가 부착된 얇은 두께의 제1웨이퍼를 준비하는 단계;제2범프가 앞면으로부터 뒷면으로 관통하게 박혀 있고 뒷면에 딱딱한 판재의 제2지지부가 부착된 얇은 두께의 제2웨이퍼를 준비하는 단계;상기 제1범프의 밑단이 상기 제2범프의 상단에 전기적으로 연결되게 상기 제1웨이퍼를 상기 제2웨이퍼 상에 정렬하고 접합하는 단계; 및상기 제1웨이퍼로부터 상기 제1지지부를 제거하고 상기 제2웨이퍼로부터 상기 제2지지부를 제거하는 단계를 포함하는 것을 특징으로 하는 웨이퍼들의 스택을 형성하는 방법.
- 제21항에 있어서,상기 지지부는 투명한 유리 판재로 도입되는 것을 특징으로 하는 웨이퍼들의 스택을 형성하는 방법.
- 제21항에 있어서,상기 지지부는 발포성 접착 테이프에 의해서 상기 웨이퍼에 부착되는 것을 특징으로 하는 웨이퍼들의 스택을 형성하는 방법.
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KR20010105162A (ko) * | 2000-04-25 | 2001-11-28 | 가네꼬 히사시 | 반도체장치의 제조방법 |
KR20020012061A (ko) * | 2000-08-05 | 2002-02-15 | 이수남 | 웨이퍼 레벨 스택 패키지 및 그의 제조 방법 |
KR20030050665A (ko) * | 2001-12-19 | 2003-06-25 | 삼성전자주식회사 | 적층 칩 패키지와 그 제조 방법 |
KR20050120280A (ko) * | 2004-06-18 | 2005-12-22 | 삼성전자주식회사 | 웨이퍼 레벨 칩 스택 패키지 제조 방법 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101238732B1 (ko) | 2010-07-15 | 2013-03-04 | 소이텍 | 본딩된 반도체 구조체들을 형성하는 방법들, 및 상기 방법들에 의하여 형성된 반도체 구조체들 |
KR101311332B1 (ko) * | 2010-07-19 | 2013-09-27 | 소이텍 | 임시 반도체 구조 본딩 방법들 및 관련 본딩된 반도체 구조들 |
US11114403B2 (en) | 2019-11-06 | 2021-09-07 | SK Hynix Inc. | Semiconductor device and method of manufacturing semiconductor device |
Also Published As
Publication number | Publication date |
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KR20050121432A (ko) | 2005-12-27 |
US7494845B2 (en) | 2009-02-24 |
US20050282374A1 (en) | 2005-12-22 |
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