JP7201386B2 - 半導体装置製造方法 - Google Patents
半導体装置製造方法 Download PDFInfo
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- JP7201386B2 JP7201386B2 JP2018199010A JP2018199010A JP7201386B2 JP 7201386 B2 JP7201386 B2 JP 7201386B2 JP 2018199010 A JP2018199010 A JP 2018199010A JP 2018199010 A JP2018199010 A JP 2018199010A JP 7201386 B2 JP7201386 B2 JP 7201386B2
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- wafer
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- temporary adhesive
- thinned
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Description
Z3-COOH (d)
(式中、Z3はカルボキシ基以外の置換基を有していてもよい、飽和もしくは不飽和脂肪族炭化水素、飽和もしくは不飽和脂環式炭化水素、および芳香族炭化水素からなる群より選択される一種、の構造式から1個の水素原子を除去した基を表す)
Z4-OH (e)
(式中、Z4はヒドロキシ基以外の置換基を有していてもよい芳香族炭化水素の構造式から1個の水素原子を除去した基を表す)
<フロー条件>
圧力:100kg/cm2
スピード:6℃/分
ノズル:1mmφ×10mm
溶媒:重クロロホルム
積算回数:1800回
測定温度:25℃
測定温度:40℃
溶離液:テトラヒドロフラン(THF)
試料濃度:0.1~0.2質量%
流量:1mL/分
標準試料:ポリスチレン
検出器:UV-VIS検出器(商品名「SPD-20A」,株式会社島津製作所製)
後記のようにして得られるエポキシ基含有ポリオルガノシルセスキオキサン100質量部と、プロピレングリコールモノメチルエーテルアセテート115質量部と、アンチモン系スルホニウム塩(商品名「SI-150L」,三新化学工業株式会社製)0.45質量部(固形分として)と、(4-ヒドロキシフェニル)ジメチルスルホニウムメチルサルファイト(商品名「サンエイドSI助剤」,三新化学工業株式会社製)0.05質量部とを混合し、接着剤を得た。
還流冷却器と、窒素ガス導入管と、撹拌装置と、温度計とを備えた300mLのフラスコ内で、窒素ガスを導入しながら、2-(3,4-エポキシシクロヘキシル)エチルトリメトキシシラン161.5mmol(39.79g)と、フェニルトリメトキシシラン9mmol(1.69g)と、溶媒としてのアセトン165.9gとを混合して50℃に昇温した。次に、当該混合物に、5%炭酸カリウム水溶液4.7g(炭酸カリウムとして1.7mmol)を5分かけて滴下し、続いて水1700mmol(30.6g)を20分かけて滴下した。滴下操作の間、混合物に著しい温度上昇は生じなかった。当該滴下操作の後、フラスコ内に窒素ガスを導入しながら、50℃で4時間、重縮合反応を行った。重縮合反応後の反応溶液中の生成物を分析したところ、数平均分子量は1900であり、分子量分散度は1.5であった。そして、静置されて冷却された反応溶液について、相分離によって生じる下層液(水相)が中性になるまで水洗を繰り返した後、上層液を分取し、1mmHgおよび40℃の条件で、溶媒量が25質量%になるまで上層液から溶媒を留去し、無色透明の液状の生成物(エポキシ基含有ポリオルガノシルセスキオキサン)を得た。
まず、第1シリコンウエハおよび補強第2シリコンウエハを用意した。第1シリコンウエハは、直径が300mmであり、厚さが775μmであり、一方の面にシランカップリング剤処理を施したものである。第1シリコンウエハのシランカップリング剤処理においては、第1シリコンウエハの一方の面に対するシランカップリング剤(商品名「KBE403」,信越化学工業株式会社製)のスピンコーティングによる塗布、および、その後の120℃での5分間の加熱を行った。補強第2シリコンウエハは、次のようにして作製した。
1 ウエハ
1T 薄化ウエハ
1a,3a 素子形成面
1b,3b 裏面
1R 補強ウエハ
3 ウエハ(ベースウエハ)
2 仮接着剤層
4 接着剤
5 貫通電極
Y ウエハ積層体
Claims (9)
- 素子形成面およびこれとは反対の裏面を有するウエハ、支持基板、並びに、前記ウエハの前記素子形成面側および前記支持基板の間の仮接着剤層、を含む積層構造を有する補強ウエハを用意する工程と、
前記補強ウエハにおける前記ウエハをその裏面側から研削して薄化ウエハを形成する工程と、
素子形成面およびこれとは反対の裏面を有するベースウエハの前記素子形成面側と、前記補強ウエハの前記薄化ウエハの裏面側とを、接着剤を介して接合する接合工程と、
前記補強ウエハにおける前記支持基板と前記薄化ウエハの間の前記仮接着剤層による仮接着状態を解除して前記支持基板の取り外しを行う、取外し工程と、を含み、
前記仮接着剤層を形成するための仮接着剤は、多価ビニルエーテル化合物と、そのビニルエーテル基と反応してアセタール結合を形成可能なヒドロキシ基またはカルボキシ基を二つ以上有して前記多価ビニルエーテル化合物と重合体を形成しうる化合物と、熱可塑性樹脂とを含有し、
前記接着剤は、重合性基含有ポリオルガノシルセスキオキサンを含有し、
前記接合工程は、前記重合体の軟化点より低い温度で前記接着剤を硬化させる硬化処理を含み、前記硬化処理温度が30~200℃であり、
前記取外し工程は、前記重合体の軟化点より高い温度で前記仮接着剤層を軟化させる軟化処理を含み、前記軟化処理温度が130~250℃である半導体装置製造方法。 - 素子形成面およびこれとは反対の裏面を有するウエハ、支持基板、並びに、前記ウエハの前記素子形成面側および前記支持基板の間の、前記仮接着剤から形成された仮接着剤層、を含む積層構造を有する少なくとも一つの追加の補強ウエハを用意する工程と、
各追加の補強ウエハにおける前記ウエハをその裏面側から研削して薄化ウエハを形成する工程と、
前記追加の補強ウエハにおける前記薄化ウエハの裏面側を、前記ベースウエハ上の薄化ウエハの素子形成面側に前記接着剤を介して接合する、少なくとも一つの追加の接合工程と、
前記追加の接合工程ごとに行われる少なくとも一つの、前記追加の補強ウエハにおける前記支持基板と前記薄化ウエハの間の前記仮接着剤層による仮接着状態を解除して前記支持基板の取り外しを行う取外し工程と、を更に含む、請求項1に記載の半導体装置製造方法。 - 前記追加の接合工程は、前記重合体の軟化点より低い温度で前記接着剤を硬化させる硬化処理を含み、
前記追加の接合工程ごとに行われる前記取外し工程は、前記重合体の軟化点より高い温度で前記仮接着剤層を軟化させる軟化処理を含む、請求項2に記載の半導体装置製造方法。 - 前記取外し工程を経て得られるウエハ積層体における積層方向の一端に位置する薄化ウエハの素子形成面から他端に位置するベースウエハの素子形成面に至るまで当該ウエハ積層体内を貫通して延びる貫通電極を形成する工程を更に含む、請求項1から3のいずれか一つに記載の半導体装置製造方法。
- 前記ベースウエハにおける前記裏面側に対する研削によって当該ベースウエハを薄化する工程を更に含む、請求項1から4のいずれか一つに記載の半導体装置製造方法。
- 前記取外し工程を経て得られるウエハ積層体における積層方向の一端に位置する薄化ウエハの素子形成面から他端に位置するベースウエハの素子形成面を超える位置まで当該ウエハ積層体内を貫通して延びる貫通電極を形成する工程と、
前記ベースウエハにおける前記裏面側に対する研削によって当該ベースウエハを薄化して当該裏面側にて前記貫通電極を露出させるベースウエハ薄化工程と、を更に含む、請求項1から3のいずれか一つに記載の半導体装置製造方法。 - 一の前記ベースウエハ薄化工程を経て得られるウエハ積層体における積層方向の一端に位置する薄化ウエハの素子形成面側と、他の一の前記ベースウエハ薄化工程を経て得られるウエハ積層体における積層方向の一端に位置する薄化ウエハの素子形成面側と、を接合する工程を更に含む、請求項6に記載の半導体装置製造方法。
- 一の前記ベースウエハ薄化工程を経て得られるウエハ積層体における積層方向の一端に位置する薄化ウエハの素子形成面側と、他の一の前記ベースウエハ薄化工程を経て得られるウエハ積層体における積層方向の一端に位置するベースウエハの裏面側と、を接合する工程を更に含む、請求項6に記載の半導体装置製造方法。
- 一の前記ベースウエハ薄化工程を経て得られるウエハ積層体における積層方向の一端に位置するベースウエハの裏面側と、他の一の前記ベースウエハ薄化工程を経て得られるウエハ積層体における積層方向の一端に位置するベースウエハの裏面側と、を接合する工程を更に含む、請求項6に記載の半導体装置製造方法。
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