BR112013001769A2 - unidade microeletrônica, sistema, e, método de fabricação de uma unidade microeletrônica. - Google Patents

unidade microeletrônica, sistema, e, método de fabricação de uma unidade microeletrônica.

Info

Publication number
BR112013001769A2
BR112013001769A2 BR112013001769A BR112013001769A BR112013001769A2 BR 112013001769 A2 BR112013001769 A2 BR 112013001769A2 BR 112013001769 A BR112013001769 A BR 112013001769A BR 112013001769 A BR112013001769 A BR 112013001769A BR 112013001769 A2 BR112013001769 A2 BR 112013001769A2
Authority
BR
Brazil
Prior art keywords
aperture
microelectronic unit
conductor
semiconductor region
front surface
Prior art date
Application number
BR112013001769A
Other languages
English (en)
Inventor
Haba Belgacem
Mitchell Craig
Mohammed Ilyas
Savalia Piyush
Oganesian Vage
Original Assignee
Tessera Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tessera Inc filed Critical Tessera Inc
Publication of BR112013001769A2 publication Critical patent/BR112013001769A2/pt

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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

unidade microeletrônica, sistema, e, método de fabricação de uma unidade microeletrônica, um elemento mciroeletrônica, por exemplo, um chip de circuito integrado, com uma região semicondutora de forma monocristalina. a região semicondutora tem uma superf´ciie frontal que estende em uma primeira direção, um elemmento de circuito ativo adjacente à superfície frontal, uma superfícietraseira remota em relação à superfície frontale um condutor que se estende na direção da superfície traseira. o condutor pdoe ser isoaldo da região semiconadutora por uma camada dielétrica inorgânica. uma abertura pode se estender a partir da superfície traseira parcialmente através de uma espessura da região semicondutora, com a aberturae a vida condutora tendo respectivas larguras na primeira direção. a largura da abertura pdoe ser maior que a largura da via condutora onde a abertura a via condutora. um contto traseiro pode ser eletricamente conectado no condutor e exposto na superfície traseira para conexão elétrica com um elemento do circuito externo.
BR112013001769A 2010-07-23 2010-10-13 unidade microeletrônica, sistema, e, método de fabricação de uma unidade microeletrônica. BR112013001769A2 (pt)

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US12/842,651 US8796135B2 (en) 2010-07-23 2010-07-23 Microelectronic elements with rear contacts connected with via first or via middle structures
PCT/US2010/052458 WO2012011928A1 (en) 2010-07-23 2010-10-13 Microelectronic elements with rear contacts connected with via first or via middle structures

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EP2596520B1 (en) 2021-05-05
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JP2013533638A (ja) 2013-08-22
CN103109349A (zh) 2013-05-15
TW201205758A (en) 2012-02-01
TWI502712B (zh) 2015-10-01
KR20130088850A (ko) 2013-08-08
US8796135B2 (en) 2014-08-05
US20120018863A1 (en) 2012-01-26
EP2596520A4 (en) 2017-07-05
WO2012011928A1 (en) 2012-01-26
EP2596520A1 (en) 2013-05-29
KR101597341B1 (ko) 2016-02-24

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