ATE493760T1 - Bilden einer integrierten mehrsegmentschaltung mit isolierten substraten - Google Patents

Bilden einer integrierten mehrsegmentschaltung mit isolierten substraten

Info

Publication number
ATE493760T1
ATE493760T1 AT03729041T AT03729041T ATE493760T1 AT E493760 T1 ATE493760 T1 AT E493760T1 AT 03729041 T AT03729041 T AT 03729041T AT 03729041 T AT03729041 T AT 03729041T AT E493760 T1 ATE493760 T1 AT E493760T1
Authority
AT
Austria
Prior art keywords
forming
integrated multi
segment circuit
insulated substrates
integrated circuit
Prior art date
Application number
AT03729041T
Other languages
English (en)
Inventor
Eugene Atlas
Original Assignee
Imagerlabs Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imagerlabs Inc filed Critical Imagerlabs Inc
Application granted granted Critical
Publication of ATE493760T1 publication Critical patent/ATE493760T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3178—Coating or filling in grooves made in the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H01L2924/143—Digital devices
    • H01L2924/1433—Application-specific integrated circuit [ASIC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
AT03729041T 2002-05-20 2003-05-20 Bilden einer integrierten mehrsegmentschaltung mit isolierten substraten ATE493760T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US38268202P 2002-05-20 2002-05-20
PCT/US2003/015904 WO2003100829A2 (en) 2002-05-20 2003-05-20 Forming a multi segment integrated circuit with isolated substrates

Publications (1)

Publication Number Publication Date
ATE493760T1 true ATE493760T1 (de) 2011-01-15

Family

ID=29584442

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03729041T ATE493760T1 (de) 2002-05-20 2003-05-20 Bilden einer integrierten mehrsegmentschaltung mit isolierten substraten

Country Status (6)

Country Link
US (1) US7112874B2 (de)
EP (1) EP1540728B1 (de)
AT (1) ATE493760T1 (de)
AU (1) AU2003233604A1 (de)
DE (1) DE60335554D1 (de)
WO (1) WO2003100829A2 (de)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003197569A (ja) * 2001-12-28 2003-07-11 Disco Abrasive Syst Ltd 半導体チップの製造方法
JP4401066B2 (ja) * 2002-11-19 2010-01-20 三洋電機株式会社 半導体集積装置及びその製造方法
US20040166662A1 (en) * 2003-02-21 2004-08-26 Aptos Corporation MEMS wafer level chip scale package
TWI225696B (en) * 2003-06-10 2004-12-21 Advanced Semiconductor Eng Semiconductor package and method for manufacturing the same
JP2005032903A (ja) * 2003-07-10 2005-02-03 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
US7098518B1 (en) * 2003-08-27 2006-08-29 National Semiconductor Corporation Die-level opto-electronic device and method of making same
JP4553611B2 (ja) * 2004-03-15 2010-09-29 三洋電機株式会社 回路装置
JP2006059839A (ja) * 2004-08-17 2006-03-02 Oki Electric Ind Co Ltd 半導体装置およびその製造方法
US7405108B2 (en) * 2004-11-20 2008-07-29 International Business Machines Corporation Methods for forming co-planar wafer-scale chip packages
CN101019224A (zh) * 2005-06-06 2007-08-15 松下电器产业株式会社 半导体集成电路
US20060286706A1 (en) * 2005-06-21 2006-12-21 Salian Arvind S Method of making a substrate contact for a capped MEMS at the package level
US7796174B1 (en) 2006-04-25 2010-09-14 Ball Aerospace & Technologies Corp. Hybrid imager
US7791199B2 (en) * 2006-11-22 2010-09-07 Tessera, Inc. Packaged semiconductor chips
US8569876B2 (en) 2006-11-22 2013-10-29 Tessera, Inc. Packaged semiconductor chips with array
JP2010535427A (ja) 2007-07-31 2010-11-18 テッセラ，インコーポレイテッド 貫通シリコンビアを使用する半導体実装プロセス
US8859396B2 (en) * 2007-08-07 2014-10-14 Semiconductor Components Industries, Llc Semiconductor die singulation method
US7838978B2 (en) * 2007-09-19 2010-11-23 Infineon Technologies Ag Semiconductor device
KR20090108233A (ko) * 2008-04-11 2009-10-15 삼성전자주식회사 카메라 모듈의 제조 방법, 이에 의해 제작된 카메라 모듈및 상기 카메라 모듈을 포함하는 전자 시스템
GB2459302A (en) * 2008-04-18 2009-10-21 Xsil Technology Ltd A method of dicing wafers to give high die strength
GB2459301B (en) * 2008-04-18 2011-09-14 Xsil Technology Ltd A method of dicing wafers to give high die strength
EP2446478B1 (de) 2009-06-25 2018-09-12 IMEC vzw Biokompatible verpackung
US9640437B2 (en) 2010-07-23 2017-05-02 Tessera, Inc. Methods of forming semiconductor elements using micro-abrasive particle stream
US8796135B2 (en) 2010-07-23 2014-08-05 Tessera, Inc. Microelectronic elements with rear contacts connected with via first or via middle structures
US8847380B2 (en) 2010-09-17 2014-09-30 Tessera, Inc. Staged via formation from both sides of chip
US8610259B2 (en) 2010-09-17 2013-12-17 Tessera, Inc. Multi-function and shielded 3D interconnects
US8736066B2 (en) 2010-12-02 2014-05-27 Tessera, Inc. Stacked microelectronic assemby with TSVS formed in stages and carrier above chip
US8587126B2 (en) 2010-12-02 2013-11-19 Tessera, Inc. Stacked microelectronic assembly with TSVs formed in stages with plural active chips
US8610264B2 (en) 2010-12-08 2013-12-17 Tessera, Inc. Compliant interconnects in wafers
JP2013058624A (ja) * 2011-09-08 2013-03-28 Mitsubishi Electric Corp レーザダイオード素子の製造方法
US9196532B2 (en) 2012-06-21 2015-11-24 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit packages and methods for forming the same
US10151706B1 (en) * 2016-04-07 2018-12-11 Kla-Tencor Corp. Inspection for specimens with extensive die to die process variation
JP2018125479A (ja) * 2017-02-03 2018-08-09 株式会社ディスコ ウェーハの加工方法
CN110078015A (zh) * 2019-04-29 2019-08-02 深迪半导体(上海)有限公司 一种芯片封装结构及方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4484215A (en) * 1981-05-18 1984-11-20 Burroughs Corporation Flexible mounting support for wafer scale integrated circuits
JPS5898983A (ja) * 1981-12-09 1983-06-13 Hitachi Ltd 半導体圧力変換器の製造方法
US4695870A (en) * 1986-03-27 1987-09-22 Hughes Aircraft Company Inverted chip carrier
US4925808A (en) * 1989-03-24 1990-05-15 Sprague Electric Company Method for making IC die with dielectric isolation
US5151776A (en) * 1989-03-28 1992-09-29 General Electric Company Die attachment method for use in high density interconnected assemblies
US5519353A (en) * 1992-06-09 1996-05-21 At&T Corp. Balanced driver circuit for eliminating inductive noise
MX9305603A (es) * 1992-09-14 1994-05-31 Pierre Badehi Metodo y aparato para producir dispositivos de circuito integrado.
IL106892A0 (en) * 1993-09-02 1993-12-28 Pierre Badehi Methods and apparatus for producing integrated circuit devices
IL110261A0 (en) * 1994-07-10 1994-10-21 Schellcase Ltd Packaged integrated circuit
US6117707A (en) * 1994-07-13 2000-09-12 Shellcase Ltd. Methods of producing integrated circuit devices
IL113739A (en) * 1995-05-15 1998-03-10 Shellcase Ltd Bonding machine
US5674785A (en) * 1995-11-27 1997-10-07 Micron Technology, Inc. Method of producing a single piece package for semiconductor die
US6208018B1 (en) * 1997-05-29 2001-03-27 Micron Technology, Inc. Piggyback multiple dice assembly
US6102963A (en) * 1997-12-29 2000-08-15 Vantis Corporation Electrically erasable and reprogrammable, nonvolatile integrated storage device with in-system programming and verification (ISPAV) capabilities for supporting in-system reconfiguring of PLD's
CA2375322A1 (en) * 1999-06-24 2000-12-28 Mitsui Mining & Smelting Co., Ltd. Flow rate sensor unit, flowmeter and flow sensor
US6452265B1 (en) * 2000-01-28 2002-09-17 International Business Machines Corporation Multi-chip module utilizing a nonconductive material surrounding the chips that has a similar coefficient of thermal expansion
EP1251577B1 (de) * 2001-04-19 2007-04-25 Interuniversitair Microelektronica Centrum Vzw Herstellung von integrierten abstimmbaren/umschaltbaren passiven Mikro- und Millimeterwellenmodulen

Also Published As

Publication number Publication date
EP1540728A2 (de) 2005-06-15
EP1540728A4 (de) 2009-11-11
US7112874B2 (en) 2006-09-26
AU2003233604A8 (en) 2003-12-12
WO2003100829A3 (en) 2004-05-21
DE60335554D1 (de) 2011-02-10
AU2003233604A1 (en) 2003-12-12
US20030216010A1 (en) 2003-11-20
WO2003100829A2 (en) 2003-12-04
EP1540728B1 (de) 2010-12-29

Similar Documents

Publication Publication Date Title
ATE493760T1 (de) Bilden einer integrierten mehrsegmentschaltung mit isolierten substraten
ATE427763T1 (de) Ballonkatheter
AU2003216210A1 (en) Multimodal ethylene, alpha-olefin and diene polymers, processes for making and devices comprising such compositions
DE60215701D1 (de) Led-ansteuerungsschaltung
WO2002060051A3 (en) High linearity circuits and methods regarding same
TW200605165A (en) Devices and methods of making the same
SG116443A1 (en) Wiring and method of manufacturing the same, and wiring board and method of manufacturing the same.
ATE443861T1 (de) Diamant-mikroelektroden
WO2004102615A3 (en) Electroactive polymers
TW200614330A (en) Semiconductor processing components and semiconductor processing utilizing same
TW200742021A (en) Integrated circuit arrangement having a plurality of conductive structure levels and capacitor, and method
WO2004061635A3 (en) Adaptive power control
DE50208842D1 (de) Federelement
AU2002351666A1 (en) Molecular electronic component used to construct nanoelectronic circuits, molecular electronic component, electronic circuit and method for producing the same
MY128471A (en) Insulated bond wire assembly for integrated circuits
AU2003286886A1 (en) Thermosetting inorganic clay nanodispersions and their use
TW200715352A (en) Exclusion zone for stress-sensitive circuit design
AU2003298592A8 (en) Second order predistortion circuit
TWI263318B (en) An electronic assembly having a more dense arrangement of contacts that allows for routing of traces to the contacts
EA200600481A1 (ru) Электрический провод (варианты) и способ получения электрического провода
WO2002085105A3 (en) Tomato plants that exhibit resistance to $i(botrytis cinerea)
HK1075524A1 (en) Organic component for overvoltage protection and associated circuit
TW200627569A (en) Semiconductor integrated circuit and its manufacturing method
AU2002361101A1 (en) Photocurable thermosetting conductive composition, conductive circuit formed from the conductive composition, and method of forming the same
ATE524516T1 (de) Flammgeschützte epoxid- formmassen

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties