JP2012060181A - ウェーハレベルの燐光体被覆方法およびその方法を利用して製作される装置 - Google Patents
ウェーハレベルの燐光体被覆方法およびその方法を利用して製作される装置 Download PDFInfo
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
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- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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Abstract
【解決手段】通常基板上に複数のLEDを設けるステップを含む、発光ダイオード(LED)チップを製作する方法。LED上に脚柱を堆積させ、脚柱はそれぞれ、LEDのうちの1つに電気的に接触する。LEDを覆って被覆が形成され、この被覆は、脚柱の少なくとも一部を埋設する。次いで、被覆を平坦化して、前記被覆の少なくとも一部を前記LED上に残しながら、埋設された脚柱の少なくとも一部を露出させる。次いで、ワイアボンドなどによって、露出した脚柱に接触できるようにする。本発明は、キャリア基板上にフリップチップ接合されたLEDを有するLEDチップおよび他の半導体装置を製作するために使用される類似の方法を開示する。また、製作されたLEDチップウェーハおよびLEDチップも開示される。
【選択図】図2c
Description
本出願は、2007年1月22日出願のChitnisらの米国特許出願第11/656759号明細書の一部継続出願であり、同出願の利益を主張する。
Tb3-xRExO12:Ce(TAG);RE=Y、Gd、La、Lu、または
Sr2-x-yBaxCaySiO4:Eu
が含まれる。
SrxCa1-xS:Eu、Y;Y=ハロゲン化合物、
CaSiAlN3:Eu、または
Sr2-yCaySiO4:Eu
が含まれる。
SrGa2S4:Eu、
Sr2-yBaySiO4:Eu、または
SrSi2O2N2:Eu。
黄色/緑色
(Sr、Ca、Ba)(Al、Ga)2S4:Eu2+
Ba2(Mg、Zn)Si2O7:Eu2+
Gd0.46Sr0.31Al1.23OxF1.38:Eu2+ 0.06
(Ba1-x-ySrxCay)SiO4:Eu
Ba2SiO4:Eu2+
赤色
Lu2O3:Eu3+
(Sr2-xLax)(Ce1-xEux)O4
Sr2Ce1-xEuxO4
Sr2-xEuxCeO4
SrTiO3:Pr3+、Ga3+
CaAlSiN3:Eu2+
Sr2Si5N8:Eu2+
Claims (87)
- テキスチャ付きの表面を有するLEDと、
前記LED上のコンタクトと、
前記コンタクトに電気的に接触する脚柱と、
前記LEDを少なくとも部分的に覆う被覆とを含み、前記脚柱は、電気的接触のために前記被覆を貫通しかつ露出する
ことを特徴とする発光ダイオード(LED)チップ。 - 前記脚柱は、前記被覆の表面まで延び、前記被覆の前記表面で露出することを特徴とする請求項1に記載のLEDチップ。
- 前記LEDは、白色光を発することを特徴とする請求項1に記載のLEDチップ。
- 前記被覆は、前記LEDの上面に位置することを特徴とする請求項1に記載のLEDチップ。
- 前記被覆は、前記LEDの上面および側面に位置することを特徴とする請求項1に記載のLEDチップ。
- 前記LEDは、基板上に位置することを特徴とする請求項1に記載のLEDチップ。
- 前記被覆はまた、前記基板の側面にも位置することを特徴とする請求項6に記載のLEDチップ。
- 電流広がり構造をさらに含むことを特徴とする請求項1に記載のLEDチップ。
- 電流広がり層をさらに含むことを特徴とする請求項1に記載のLEDチップ。
- 前記被覆の表面は、テキスチャ付きであることを特徴とする請求項1に記載のLEDチップ。
- 前記被覆は、成形されることを特徴とする請求項1に記載のLEDチップ。
- 前記被覆は、1つまたは複数の燐光体を含むことを特徴とする請求項1に記載のLEDチップ。
- 前記被覆は、燐光体の濃度が異なる部分を含むことを特徴とする請求項8に記載のLEDチップ。
- 前記脚柱は、1つまたは複数のスタッドバンプを含むことを特徴とする請求項1に記載のLEDチップ。
- 前記脚柱は、マイクロワイアを含むことを特徴とする請求項1に記載のLEDチップ。
- 前記基板と一体形成された反射層をさらに含むことを特徴とする請求項1に記載のLEDチップウェーハ。
- 発光ダイオード(LED)パッケージであって、
サブマウントに取り付けられたLEDチップと、
前記LEDを覆って取り付けられたレンズとを含み、したがって前記LEDチップからの光は前記パッケージから前記レンズを通って発せられ、各LEDチップは、
LEDと、
前記LEDを少なくとも部分的に覆いかつ前記サブマウントを覆わない一体化した被覆とを含むことを特徴とするLEDパッケージ。 - 前記一体化した被覆は、ウェーハレベルで前記LEDを前記で少なくとも部分的に覆い、かつウェーハレベルで前記被覆を硬化させることによって形成されることを特徴とする請求項17に記載のLEDパッケージ。
- サブマウントに取り付けられた反射カップをさらに含み、前記LEDは前記反射カップ内に取り付けられ、前記被覆は前記反射カップを覆わないことを特徴とする請求項17に記載のLEDパッケージ。
- 前記LEDに電気的に接触する脚柱をさらに含み、前記脚柱は、電気的接触のために前記被覆を貫通しかつ露出することを特徴とする請求項17に記載のLEDパッケージ。
- 前記脚柱は、前記被覆の表面まで延び、前記被覆の表面で露出することを特徴とする請求項20に記載のLEDパッケージ。
- 前記LEDの表面は、テキスチャ付きであることを特徴とする請求項17に記載のLEDパッケージ。
- 前記被覆の表面は、テキスチャ付きであることを特徴とする請求項17に記載のLEDパッケージ。
- 前記LED上に電流広がり構造をさらに含むことを特徴とする請求項17に記載のLEDパッケージ。
- 前記レンズは平坦であることを特徴とする請求項17に記載のLEDパッケージ。
- 前記LEDと前記レンズとの間に封止剤をさらに含み、前記レンズは前記封止剤に接触することを特徴とする請求項17に記載のLEDパッケージ。
- 前記レンズは前記LEDに接触することを特徴とする請求項17に記載のLEDパッケージ。
- 白色光を発することを特徴とする請求項17に記載のLEDパッケージ。
- 基板に取り付けられたLEDと、
前記LEDを少なくとも部分的に覆う一体化した被覆とを含み、前記一体化した被覆は、ウェーハレベルで前記LEDを前記被覆で少なくとも部分的に覆い、かつウェーハレベルで前記被覆を硬化させることによって形成される
ことを特徴とする発光ダイオード(LED)チップ。 - 前記被覆は、前記LEDの上面に位置することを特徴とする請求項29に記載のLEDチップ。
- 前記被覆は、前記LEDの上面および側面に位置することを特徴とする請求項29に記載のLEDチップ。
- 前記被覆は、前記LEDの上面および側面、ならびに前記基板の側面に位置することを特徴とする請求項29に記載のLEDチップ。
- 前記被覆は、前記基板の底面に位置することを特徴とする請求項29に記載のLEDチップ。
- 反射層をさらに含むことを特徴とする請求項29に記載のLEDチップ。
- 前記LEDの表面は、テキスチャ付きであることを特徴とする請求項29に記載のLEDチップ。
- 前記基板は、少なくとも部分的に透明であることを特徴とする請求項29に記載のLEDチップ。
- 前記基板は、不透明であることを特徴とする請求項29に記載のLEDチップ。
- 前記LEDに電気的に接触し、かつ前記被覆を貫通して前記被覆の表面まで延び、前記被覆の前記表面で露出する脚柱をさらに含むことを特徴とする請求項29に記載のLEDチップ。
- 電流広がり構造をさらに含むことを特徴とする請求項29に記載のLEDチップ。
- 電流広がり層をさらに含むことを特徴とする請求項29に記載のLEDチップ。
- 前記被覆の表面は、テキスチャ付きであることを特徴とする請求項29に記載のLEDチップ。
- 前記被覆は、成形されることを特徴とする請求項29に記載のLEDチップ。
- 前記被覆は、1つまたは複数の燐光体を含むことを特徴とする請求項29に記載のLEDチップ。
- 前記被覆は、燐光体の濃度が異なる部分を含むことを特徴とする請求項43に記載のLEDチップ。
- 基板の表面に複数のLEDを設けるステップと、
脚柱を堆積させるステップであって、前記脚柱はそれぞれ前記LEDのうちの1つに電気的に接触するステップと、
前記基板内に溝を形成するステップであって、前記溝のうちの少なくとも一部は隣接するLED間に位置するステップと、
前記LEDを覆って被覆を形成するステップであって、前記被覆は前記脚柱のうちの少なくとも一部を埋設するステップと、
前記埋設された脚柱のうちの少なくとも一部を露出させながら前記LED上に前記被覆のうちの少なくとも一部を残して前記被覆を薄層化するステップと
を含むことを特徴とする発光ダイオード(LED)チップを製作する方法。 - 前記基板を薄層化するステップをさらに含むことを特徴とする請求項45に記載の方法。
- 前記基板は、前記溝とは反対側の表面から薄層化されることを特徴とする請求項46に記載の方法。
- 前記LEDを個片化するステップをさらに含むことを特徴とする請求項45に記載の方法。
- 前記薄層化するステップは、前記溝の底部と前記溝とは反対側の前記基板の表面との間に前記基板の安定化部分を残し、前記安定化部分および前記被覆を切断することによって前記LEDを個片化するステップをさらに含むことを特徴とする請求項47に記載の方法。
- 前記個片化されたLEDのうちの少なくとも一部は、LED、脚柱、前記被覆の一部分、および前記基板の一部分を含み、前記被覆は、前記LEDおよび前記基板の側面の一部を少なくとも部分的に覆うことを特徴とする請求項49に記載の方法。
- 前記被覆は、前記溝を少なくとも部分的に埋め、前記薄層化ステップでは、前記基板を前記溝の底部まで薄層化し、前記LEDのうちの隣接するLED間で前記被覆を切断することによって前記LEDを個片化するステップをさらに含むことを特徴とする請求項46に記載の方法。
- 前記個片化されたLEDのうちの少なくとも一部は、LED、脚柱、前記被覆の一部分、および前記基板の一部分を含み、前記被覆は、前記LEDを少なくとも部分的に覆い、かつ前記基板の側面の実質上すべてを覆うことを特徴とする請求項51に記載の方法。
- 前記個片化されたLEDは、前記被覆の一部分を含み、前記部分は、成形またはパターニングされることを特徴とする請求項48に記載の方法。
- 前記LEDチップは、白色光を発することを特徴とする請求項45に記載の方法。
- 前記脚柱のうちの少なくとも一部は、1つまたは複数のスタッドバンプを含むことを特徴とする請求項45に記載の方法。
- 前記脚柱のうちの少なくとも一部は、マイクロワイアを含むことを特徴とする請求項45に記載の方法。
- 前記LEDのそれぞれの上にコンタクトを堆積させるステップをさらに含み、前記脚柱は、前記コンタクト上に形成されることを特徴とする請求項45に記載の方法。
- 前記LED上に電流広がり構造を形成するステップをさらに含み、前記電流広がり構造はそれぞれ、前記コンタクトのうちの少なくとも1つに電気的に接触することを特徴とする請求項45に記載の方法。
- 少なくとも1つの電流広がり層を堆積させるステップをさらに含むことを特徴とする請求項45に記載の方法。
- 前記LEDは、キャリア基板上にフリップチップ実装されることを特徴とする請求項45に記載の方法。
- 前記LEDは、成長基板のうちの少なくとも一部分を含むことを特徴とする請求項45に記載の方法。
- 前記被覆上に表面テキスチャを形成するステップをさらに含むことを特徴とする請求項45に記載の方法。
- 前記表面テキスチャは、前記被覆の厚さの10%より大きく寸法設定されたテキスチャリング特徴を含むことを特徴とする請求項62に記載の方法。
- 前記LED上に表面テキスチャを形成するステップをさらに含むことを特徴とする請求項45に記載の方法。
- 前記表面テキスチャは、前記LEDの厚さの10%より大きく寸法設定されたテキスチャリング特徴を含むことを特徴とする請求項64に記載の方法。
- 前記被覆は、燐光体を添加した接着剤を含むことを特徴とする請求項45に記載の方法。
- 前記被覆は、散乱粒子を含むことを特徴とする請求項45に記載の方法。
- 前記被覆は、異なる組成物を有する複数の層を含むことを特徴とする請求項45に記載の方法。
- 前記脚柱のうちの少なくとも一部を相互接続する金属パッドを、前記平坦化した被覆上に堆積させて、LEDアレイを形成するステップをさらに含むことを特徴とする請求項45に記載の方法。
- 前記LEDのうちの1つをサブマウントまたはプリント回路ボード(PCB)に取り付けるステップをさらに含むことを特徴とする請求項45に記載の方法。
- 光抽出を高めるために少なくとも1つのテキスチャ付きの表面を有する複数のLEDと、
それぞれ前記LEDのうちの1つに電気的に接触する複数の脚柱と、
前記LEDを少なくとも部分的に覆う被覆とを含み、前記脚柱のうちの少なくとも一部は、電気的接触のために貫通しかつ露出する
ことを特徴とする発光ダイオード(LED)チップウェーハ。 - 前記脚柱のうちの少なくとも一部は、前記被覆の表面まで延び、前記被覆の前記表面で露出することを特徴とする請求項71に記載のLEDチップウェーハ。
- 前記脚柱のうちの少なくとも1つは、スタッドバンプを含むことを特徴とする請求項71に記載のLEDチップウェーハ。
- 前記脚柱のうちの少なくとも1つは、マイクロワイアを含むことを特徴とする請求項71に記載のLEDチップウェーハ。
- 前記LEDのうちの1つの上に少なくとも1つの電流広がり構造をさらに含み、前記電流広がり構造は、前記コンタクトのうちの少なくとも1つに電気的に接触することを特徴とする請求項71に記載のLEDチップウェーハ。
- 少なくとも1つの電流広がり層をさらに含むことを特徴とする請求項71に記載のLEDチップウェーハ。
- 前記テキスチャ付きのLED表面は、前記LEDの厚さの10%より大きなテキスチャ特徴を含むことを特徴とする請求項71に記載のLEDチップウェーハ。
- 前記被覆は、テキスチャ付きの表面を含むことを特徴とする請求項71に記載のLEDチップウェーハ。
- 前記被覆のテキスチャ付きの表面は、前記被覆の厚さの10%より大きな特徴を有することを特徴とする請求項78に記載のLEDチップウェーハ。
- 2つの隣接するLED間に溝をさらに含み、前記被覆は、前記溝を少なくとも部分的に埋めることを特徴とする請求項71に記載のLEDチップウェーハ。
- 前記被覆は、複数の燐光体を含むことを特徴とする請求項71に記載のLEDチップウェーハ。
- 前記被覆は、散乱粒子を含むことを特徴とする請求項71に記載のLEDチップウェーハ。
- 前記被覆は、燐光体を添加した接着剤を含むことを特徴とする請求項71に記載のLEDチップウェーハ。
- 前記LEDは、LEDアレイ内で相互接続されることを特徴とする請求項71に記載のLEDチップウェーハ。
- 前記基板ウェーハに一体形成された反射層をさらに含むことを特徴とする請求項71に記載のLEDチップウェーハ。
- 前記被覆は、燐光体の濃度が異なる複数の部分を含むことを特徴とする請求項71に記載のLEDチップウェーハ。
- 前記LEDおよび被覆から白色光を発することが可能であることを特徴とする請求項71に記載のLEDチップウェーハ。
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KR20090122210A (ko) | 2009-11-26 |
JP2010517289A (ja) | 2010-05-20 |
EP2111648A2 (en) | 2009-10-28 |
EP2111648B1 (en) | 2019-05-15 |
WO2008091319A3 (en) | 2008-09-18 |
US20080179611A1 (en) | 2008-07-31 |
US9159888B2 (en) | 2015-10-13 |
KR101548022B1 (ko) | 2015-08-27 |
WO2008091319A2 (en) | 2008-07-31 |
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