TWI456798B - 發光裝置之製造方法 - Google Patents

發光裝置之製造方法 Download PDF

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Publication number
TWI456798B
TWI456798B TW099128153A TW99128153A TWI456798B TW I456798 B TWI456798 B TW I456798B TW 099128153 A TW099128153 A TW 099128153A TW 99128153 A TW99128153 A TW 99128153A TW I456798 B TWI456798 B TW I456798B
Authority
TW
Taiwan
Prior art keywords
light
electrode
light emitting
layer
conductive pad
Prior art date
Application number
TW099128153A
Other languages
English (en)
Other versions
TW201138154A (en
Original Assignee
Formosa Epitaxy Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Formosa Epitaxy Inc filed Critical Formosa Epitaxy Inc
Priority to TW099128153A priority Critical patent/TWI456798B/zh
Priority to US12/905,258 priority patent/US8658443B2/en
Priority to JP2010246477A priority patent/JP5242661B2/ja
Priority to KR1020100118671A priority patent/KR101179797B1/ko
Priority to DE102011001396A priority patent/DE102011001396A1/de
Priority to DE202011110931.7U priority patent/DE202011110931U1/de
Publication of TW201138154A publication Critical patent/TW201138154A/zh
Application granted granted Critical
Publication of TWI456798B publication Critical patent/TWI456798B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Claims (5)

  1. 一種發光裝置之製造方法，其包含：提供一基板；提供一發光模組並設置於該基板上，其中該發光模組包含一發光單元與一承載基板；形成一第一電極與一第二電極，該第一電極與該第二電極經該承載基板電性連接至該發光單元；形成一第一保護層與一第二保護層，該第一保護層位於該第一電極上，該第二保護層位於該第二電極上；形成一螢光粉層於該發光模組上，該螢光粉層覆蓋該發光模組與該些保護層；移除位於該些保護層上的部分該螢光粉層；以及移除該些保護層。
  2. 如申請專利範圍第1項所述之發光裝置之製造方法，其中於提供該發光模組並設置於該基板上之步驟中，其包含：形成一第一導電墊與一第二導電墊提供該承載基板並設置於該第一導電墊與該第二導電墊上，該乘載基板具有至少一第一連接單元與至少一第二連接單元，該第一連接單元電性連接於該第一導電墊，該第二連接單元電性連接於該第二導電墊；以及設置該發光單元於該承載基板上，該發光單元電性連接至該第一連接單元與該第二連接單元，以組成該發光模組；以及 設置該發光模組於該基板上，該第一導電墊與該第二導電電分別電性連接於該第一電極與該第二電極。
  3. 如申請專利範圍第1項所述之發光裝置之製造方法，其中於移除位於該保護層上的部分該螢光粉層之步驟中，係利用一研磨法或一切削法使該螢光粉層之高度不高於該些保護層。
  4. 如申請專利範圍第1項所述之發光裝置之製造方法，其中於移除該些保護層之步驟中，係利用一蝕刻法移除該些保護層。
  5. 如申請專利範圍第1項所述之發光裝置之製造方法，其中該螢光粉層的厚度為10微米至50微米。
TW099128153A 2010-04-23 2010-08-23 發光裝置之製造方法 TWI456798B (zh)

Priority Applications (6)

Application Number Priority Date Filing Date Title
TW099128153A TWI456798B (zh) 2010-04-23 2010-08-23 發光裝置之製造方法
US12/905,258 US8658443B2 (en) 2010-08-23 2010-10-15 Method for manufacturing light emitting device
JP2010246477A JP5242661B2 (ja) 2010-08-23 2010-11-02 発光装置の製造方法
KR1020100118671A KR101179797B1 (ko) 2010-08-23 2010-11-26 발광 소자의 제조 방법
DE102011001396A DE102011001396A1 (de) 2010-08-23 2011-03-18 Verfahren zur Herstellung einer Licht emittierenden Vorrichtung
DE202011110931.7U DE202011110931U1 (de) 2010-08-23 2011-03-18 Licht emittierende Vorrichtung

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW99112894 2010-04-23
TW099128153A TWI456798B (zh) 2010-04-23 2010-08-23 發光裝置之製造方法

Publications (2)

Publication Number Publication Date
TW201138154A TW201138154A (en) 2011-11-01
TWI456798B true TWI456798B (zh) 2014-10-11

Family

ID=45594384

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099128153A TWI456798B (zh) 2010-04-23 2010-08-23 發光裝置之製造方法

Country Status (5)

Country Link
US (1) US8658443B2 (zh)
JP (1) JP5242661B2 (zh)
KR (1) KR101179797B1 (zh)
DE (2) DE202011110931U1 (zh)
TW (1) TWI456798B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11362243B2 (en) * 2019-10-09 2022-06-14 Lumileds Llc Optical coupling layer to improve output flux in LEDs

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090212308A1 (en) * 2005-08-26 2009-08-27 Osram Opto Semiconductors Gmbh Method for producing an led chip and led chip

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6576488B2 (en) * 2001-06-11 2003-06-10 Lumileds Lighting U.S., Llc Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor
JP2006019594A (ja) * 2004-07-02 2006-01-19 Matsushita Electric Ind Co Ltd 半導体ウェハ、半導体装置の製造方法、及び半導体装置
TW200637033A (en) * 2004-11-22 2006-10-16 Matsushita Electric Ind Co Ltd Light-emitting device, light-emitting module, display unit, lighting unit and method for manufacturing light-emitting device
US7221044B2 (en) * 2005-01-21 2007-05-22 Ac Led Lighting, L.L.C. Heterogeneous integrated high voltage DC/AC light emitter
JP5073946B2 (ja) * 2005-12-27 2012-11-14 新光電気工業株式会社 半導体装置および半導体装置の製造方法
KR100748708B1 (ko) 2006-07-20 2007-08-13 서울옵토디바이스주식회사 발광 다이오드 및 이의 제조 방법
US20080035942A1 (en) * 2006-08-08 2008-02-14 Lg Electronics Inc. Light emitting device package and method for manufacturing the same
JP2008108952A (ja) * 2006-10-26 2008-05-08 Matsushita Electric Ind Co Ltd 半導体発光装置および半導体発光装置の製造方法
KR100940049B1 (ko) 2006-10-26 2010-02-03 삼성엘이디 주식회사 복합 파장의 광을 발생시키는 발광 다이오드 소자의제조방법
US9159888B2 (en) * 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
JP5141077B2 (ja) * 2007-04-03 2013-02-13 日亜化学工業株式会社 発光装置及びその製造方法
JP4999551B2 (ja) * 2007-05-24 2012-08-15 株式会社小糸製作所 発光素子モジュール
US10505083B2 (en) * 2007-07-11 2019-12-10 Cree, Inc. Coating method utilizing phosphor containment structure and devices fabricated using same
TWI396298B (zh) * 2007-08-29 2013-05-11 Everlight Electronics Co Ltd 發光半導體元件塗佈螢光粉的方法及其應用
JP2009076749A (ja) * 2007-09-21 2009-04-09 Toyoda Gosei Co Ltd Ｌｅｄ装置及びその製造方法
JP5558665B2 (ja) * 2007-11-27 2014-07-23 パナソニック株式会社 発光装置
US8138509B2 (en) * 2009-02-27 2012-03-20 Visera Technologies Company, Limited Light emitting device having luminescent layer with opening to exposed bond pad on light emitting die for wire bonding pad to substrate
US7994531B2 (en) * 2009-04-02 2011-08-09 Visera Technologies Company Limited White-light light emitting diode chips and fabrication methods thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090212308A1 (en) * 2005-08-26 2009-08-27 Osram Opto Semiconductors Gmbh Method for producing an led chip and led chip

Also Published As

Publication number Publication date
TW201138154A (en) 2011-11-01
US8658443B2 (en) 2014-02-25
KR101179797B1 (ko) 2012-09-04
KR20120018698A (ko) 2012-03-05
DE202011110931U1 (de) 2017-06-26
JP2012044131A (ja) 2012-03-01
JP5242661B2 (ja) 2013-07-24
US20120045857A1 (en) 2012-02-23
DE102011001396A1 (de) 2012-08-09

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