TWI485877B - 晶圓級磷光體塗佈方法及使用該方法製造之裝置 - Google Patents
晶圓級磷光體塗佈方法及使用該方法製造之裝置 Download PDFInfo
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Description
本發明係關於製造半導體裝置之方法且尤其係關於用於發光二極體之晶圓級塗佈之方法。
本發明係在政府基於USAF 05-2-5507契約下之支援而作成。政府對於本發明具有某些權利。
發光二極體(LED)為將電能轉化為光且一般包含一或多個夾在相對摻雜層之間的半導體材料之活性層的固態裝置。當在摻雜層兩端施加偏壓時,電洞及電子被注入至活性層中,其在其中重組以產生光。光係自活性層及所有LED之表面發出。
習知LED不能自其活性層產生白光。藉由以黃色磷光體、聚合物或染料環繞LED,已將來自自發藍光LED之光轉化為白光,典型磷光體為鈰摻雜釔鋁石榴石(Ce:YAG)。[參見Nichia Corp.白色LED,部件編號NSPW300BS、NSPW312BS,等;亦參見頒予Lowrey之美國專利第5959316號,"Multiple Encapsulation of Phosphor-LED Devices"]。環繞磷光體材料"降頻轉換"一些LED之藍光的波長,使其顏色變為黃色。一些藍光穿過磷光體而未經改變同時光之實質部分降頻轉換為黃色。LED發射藍光及黃光兩者,其組合以提供白光。在另一方法中,藉由以多色磷光體或染料環繞LED,已將來自發射紫色或紫外線之LED之光轉化為白光。
一種用磷光體層塗佈LED之習知方法利用注射器或噴嘴
將與環氧樹脂或聚矽氧聚合物混合之磷光體注射在LED上。然而使用此方法可難以控制磷光體層之幾何形狀及厚度。因此,以不同角度自LED發射之光可穿過不同量之轉化材料,其可導致具有與視角有關之非均勻色溫之LED。因為難以控制幾何形狀及厚度,所以亦可難以一致再現具有相同或類似發射特徵之LED。
另一塗佈LED之習知方法係藉由模板印刷,其在頒予Lowery之歐洲專利申請案EP 1198016 A2中加以描述。將多個發光半導體裝置排列於一基板上,相鄰LED之間具有所需距離。提供具有與LED對準之開口之模板,其中孔比LED稍大且模板比LED厚。將模板定位於基板上,每一LED位於模板中之各別開口中。接著將組合物沈積於模板開口中,覆蓋LED,其中典型組合物為可藉由熱或光固化之聚矽氧聚合物中之磷光體。將孔填充之後,自基板移除模板且模板組合物固化為固態。
如上文之注射器方法,使用模板方法可難以控制含磷光體聚合物之幾何形狀及層厚度。模板組合物可能未充分填充模板開口,致使所得層並非均勻。含磷光體組合物亦可黏附於模板開口,其減少保留在LED上之組合物之量。模板開口亦可能未與LED對準。此等問題可導致具有非均勻色溫之LED及難以一致以相同或類似發射特徵再現之LED。
已考慮LED之各種塗佈方法,包括旋塗、噴塗、靜電沈積(ESD)及電泳沈積(EPD)。諸如旋塗或噴塗之方法通常在磷光體沈積期間利用黏合劑,而其他方法需要在磷光體沈
積之後立即添加黏合劑以使磷光體顆粒/粉末穩定。
此等方式之關鍵挑戰為塗佈過程之後接取裝置上之導線接合墊。難以利用典型聚矽氧黏合材料以及諸如環氧樹脂或玻璃之其他黏合劑材料,藉由標準晶圓製造技術接取導線接合。聚矽氧與通常所用諸如丙酮之晶圓製造材料以及一些顯影劑及抗剝離劑不相容。此可限制特定聚矽氧及加工步驟之選項及選擇。聚矽氧亦在高溫(大於150℃)下固化,該固化溫度超過通常所用光阻材料之玻璃轉移溫度。具有磷光體之固化聚矽氧膜亦難以蝕刻且在氯及CF4
電漿中具有極慢蝕刻速率且固化聚矽氧之濕式蝕刻通常低效。
本發明揭示製造諸如晶圓級LED晶片之半導體裝置的新穎方法且揭示使用該等方法製造之LED晶片及LED晶片晶圓。一種製造根據本發明之發光二極體(LED)晶片的方法包含提供複數個通常在一基板上之LED。將基座形成於LED上,基座之每一者與LED之一電接觸。在該等LED上形成塗層,該塗層掩埋至少一些基座。接著平坦化該塗層,在該等LED上留下一些該塗層材料,同時暴露至少一些掩埋之基座,使其可用於接觸。本發明揭示用於製造包含安裝於載體基板上之LED覆晶之LED晶片的類似方法。根據本發明之類似方法亦可用於製造其他半導體裝置。
使用根據本發明之方法製造之發光二極體(LED)晶片晶圓之一實施例包含複數個在一基板晶圓上之LED及複數個基座,基座之每一者與LED之一電接觸。塗層至少部分地
覆蓋LED,至少一些基座延伸穿過且到達塗層之表面。基座在塗層之表面暴露。
使用根據本發明之方法製造之發光二極體(LED)晶片之一實施例包含在一基板上之LED及一與LED電接觸之基座。塗層至少部分地覆蓋LED,基座延伸穿過且到達塗層之表面且在塗層之表面暴露。
根據本發明之某些態樣,塗層可包括磷光體顆粒,該等磷光體顆粒降頻轉換至少一些自LED晶片之活性區域發出之光以產生白光,藉此產生白色LED晶片。
本發明之此等及其他態樣及優勢將自以下以實例之方式說明本發明之特徵的實施方式及隨附圖式變得顯而易見。
本發明提供尤其適用於晶圓級塗佈半導體裝置(諸如LED)之製造方法。本發明亦提供半導體裝置,諸如使用此等方法製造之LED。本發明允許以降頻轉換物層(例如磷光體負載之聚矽氧)以晶圓級塗佈LED同時仍允許接取至用於導線接合之接點中之一或多者。根據本發明之一態樣,使導電基座/柱形成於LED接點(接合墊)中之一或兩者上同時LED係處於晶圓級。可使用諸如電鍍、無電極電鍍、螺柱凸塊或真空沈積之已知技術來製造此等基座。可接著以降頻轉換物塗層來毯覆式塗佈晶圓,掩埋LED、接點及基座。基座之每一者充當其接點之垂直延伸,且儘管利用降頻轉換物塗層之毯覆式塗層暫時覆蓋基座,但可平坦化且薄化該塗層以暴露基座之頂面或頂部。基座應足夠高(10-
100 μm)以突出穿過所需最終塗層厚度。平坦化之後,暴露基座以用於諸如藉由導線接合之外部連接。此方法以晶圓級且作為後續製造步驟進行,可使用已知方法使個別LED晶片自晶圓分離/單一化。
本發明消除毯覆式塗佈後接取導線接合墊的複雜晶圓製造過程。轉而利用簡單及成本有效之方法。其允許半導體裝置之晶圓級塗佈而無需對準。可使用多種塗佈技術,諸如磷光體負載聚矽氧混合物之旋塗或磷光體之電泳沈積,接著為聚矽氧或其他黏合材料之毯覆式塗佈。機械平坦化使得晶圓上之厚度均勻且可在寬的厚度範圍(例如1 μm至100 μm)內達成厚度均勻之塗層。可藉由控制最終塗層厚度來細調白色LED晶片顏色點,包括使用將產生緊密集合之白色LED的迭代方法(例如研磨、測試、研磨等)。此方法亦可縮放至大晶圓尺寸。
本文參考某些實施例來描述本發明,但應瞭解本發明可以多種不同形式實施且不應視為限於本文中所闡述之實施例。詳言之,在下文中關於以通常包含磷光體負載黏合劑("磷光體/黏合劑塗層")之降頻轉換物塗層塗佈LED來描述本發明,但應瞭解本發明可用於以用於降頻轉換、保護、光提取或散射之其他材料來塗佈LED。亦應瞭解磷光體黏合劑可具有散射或光提取顆粒或材料且塗層可具有電活性。根據本發明之方法亦可用於以不同材料塗佈其他半導體裝置。另外,單一或多個塗層及/或層可形成於LED上。塗層可不包括磷光體、包括一或多種磷光體、散射顆粒及/
或其他材料。塗層亦可包含諸如提供降頻轉換之有機染料的材料。對於多個塗層及/或層而言,其每一者與其他層及/或塗層相比可包括不同磷光體、不同散射顆粒、不同光學性質(諸如透明度、折射率)及/或不同物理性質。
亦應瞭解當諸如層、區域或基板之元件稱為"在另一元件之上"時,其可直接在另一元件之上或亦可存在插入元件。此外,諸如"內(inner)"、"外(outer)"、"上(upper)"、"上方(above)"、"下(lower)"、"在...之下(beneath)"及"下方(below)"及類似術語之相對術語在本文中可用以描述一層或另一區域之關係。應瞭解此等術語除圖中所描繪之取向外亦意欲涵蓋裝置之不同取向。
儘管本文中可使用術語第一、第二等描述各種元件、組件、區域、層及/或部分,但此等元件、組件、區域、層及/或部分不應受限於此等術語。此等術語僅用以將一元件、組件、區域、層或部分與另一區域、層或部分區分開。因此,在不悖離本發明之教示的情況下,下文論述之第一元件、組件、區域、層或部分可稱為第二元件、組件、區域、層或部分。
本文參考作為本發明之理想化實施例之示意性說明的截面圖圖解來描述本發明之實施例。因此,預期存在由於(例如)製造技術及/或容許度導致之與圖解之形狀不同。本發明之實施例不應理解為限於本文中所說明之區域的特定形狀,而欲包括由於(例如)製造導致之形狀偏差。經說明或描述為正方形或矩形之區域將通常由於正常製造容許度
具有圓形或曲線特徵。因此,圖中所說明之區域實際上為示意性的且其形狀並不意欲說明裝置之區域的精確形狀且並不意欲限制本發明之範疇。
圖1a至圖1e展示使用根據本發明之方法製造的晶圓級LED晶片10之一實施例。現參看圖1a,LED晶片10展示係處於其製造過程之晶圓級。亦即,LED晶片10並未經由自晶圓分離/單一化為個別LED晶片之前的所有必要步驟。包括假想線以展示在LED晶片10與以下額外製造步驟之間的分離或切割線,且如圖1e中所示,可將LED晶片分離成個別裝置。圖1a至圖1e亦展示僅兩個處於晶圓級之裝置,但應瞭解可由單一晶圓形成更多LED晶片。舉例而言,當製造具有1毫米(mm)正方形尺寸之LED晶片時,在3吋晶圓上可製造多達4500個LED晶片。
每一LED晶片10包含可具有許多以不同方式排列之不同半導體層之半導體LED 12。LED之製造及操作一般已為此項技術中所已知且本文中僅簡要論述。可使用已知方法來製造LED 10之層,合適方法為使用金屬有機化學氣相沈積(MOCVD)之製造方法。LED 12之層一般包含夾在第一與第二相對摻雜磊晶層16、18之間的活性層/區域14,其所有均依次形成於基板20上。在此實施例中,LED 12展示為在基板20上之分離裝置。可藉由使活性區域14及摻雜層16、18之部分蝕刻下降至基板20以在LED 12之間形成開放區來達成此分離。在其他實施例中及如下文中更詳細描述,活性層14及摻雜層16、18可保持為基板20上之連續層
且可在將LED晶片單一化時分離為個別裝置。
應瞭解LED 12中亦可包括額外層及元件,包括(但不限於)緩衝層、成核層、接觸層及電流擴散層以及光提取層及元件。活性區域14可包含單量子井(SQW)、多量子井(MQW)、雙異質結構或超晶格結構。在一實施例中,第一磊晶層16為n型摻雜層且第二磊晶層18為p型摻雜層,儘管在其他實施例中第一層16可為p型摻雜層且第二層18為n型摻雜層。下文將第一磊晶層及第二磊晶層16、18分別稱為n型層及p型層。
LED 12之區域14及層16、18可由不同材料系統製造,較佳材料系統為基於第III族氮化物之材料系統。第III族氮化物係指氮與週期表第III族之元素(通常為鋁(Al)、鎵(Ga)及銦(In))之間形成之彼等半導體化合物。該術語亦係指三元化合物及四元化合物,諸如氮化鋁鎵(AlGaN)及氮化鋁銦鎵(AlInGaN)。在一較佳實施例中,n型層及p型層16、18為氮化鎵(GaN)且活性區域14為InGaN。在替代性實施例中,n型層及p型層16、18可為AlGaN、砷化鋁鎵(AlGaAs)或磷化砷化鋁鎵銦(AlGaInAsP)。
基板20可由多種材料製成,諸如藍寶石、碳化矽、氮化鋁(AlN)、GaN,合適基板為碳化矽之4H多型體,儘管亦可使用其他碳化矽多型體(包括3C、6H及15R多型體)。碳化矽具有特定優勢,諸如與藍寶石相比具有與第III族氮化物更緊密之晶格匹配且產生具有較高品質之第III族氮化物膜。碳化矽亦具有極高導熱率從而在碳化矽上之第III族氮
化物裝置之總輸出功率不受基板之熱耗散(一些在藍寶石上形成之裝置可能具有之情況)限制。SiC基板可獲自Cree Research,Inc.(Durham,North Carolina)且製造其之方法已在科學文獻中以及美國專利第Re.34,861號、第4,946,547號及第5,200,022號中闡述。在所示實施例中,基板20係處於晶圓級,具有複數個形成於晶圓基板20上之LED 12。
每一LED 12可具有第一接點及第二接點22、24。在所示實施例中,LED具有垂直幾何形狀,其中第一接點22在基板20上且第二接點24在p型層18上。第一接點22展示為一在基板上之層,但當LED晶片自晶圓單一化時,第一接點22亦將分離以使得每一LED晶片10具有其自身之第一接點22部分。施加至第一接點22之電信號傳播至n型層16且施加至第二接點24之信號傳播至p型層18。在第III族氮化物裝置之情況下,已熟知薄的半透明電流擴散層通常覆蓋一些或所有p型層18。應瞭解第二接點24可包括此通常為諸如鉑(Pt)之金屬或諸如氧化銦錫(ITO)之透明導電氧化物之層。下文將第一接點及第二接點22、24分別稱為n型接點及p型接點。
本發明亦可用於具有兩個接點在LED之頂部之側向幾何形狀之LED。諸如藉由蝕刻來移除p型層18及活性區域之一部分以暴露在n型層16上之接點台。所移除活性區域14及p型層18之部分的邊界係由垂直假想線25指定。將第二側向n型接點26(亦以假想線展示)提供於n型層16之台上。接點可包含使用已知沈積技術沈積之已知材料。
現參看圖1b且根據本發明,在p型接點24上形成p型接點基座28,其係用以在塗佈LED 12之後產生與p型接點24之電接觸。基座28可由多種不同導電材料形成且可使用多種不同已知物理或化學沈積方法(諸如電鍍、無電極電鍍或螺柱凸塊)來形成,較佳接點基座為金(Au)且係使用螺柱凸塊來形成。此方法通常為最容易且成本最有效之方法。基座28可由除Au以外之其他導電材料製成,諸如銅(Cu)或鎳(Ni)或銦或其組合。
形成螺柱凸塊之方法一般已知且在本文中僅簡要論述。經由用於習知導線接合之"球接合"方法之修改形式將螺柱凸塊置於接點(接合墊)上。在球接合中,將接合導線之尖端熔融以形成一球。以導線接合工具對此球施壓抵靠此球,施加機械力、熱及/或超音能量以產生金屬連接。導線接合工具接著將金導線延長至板、基板或引線框上之連接墊且產生對該墊之"訂合式"接合,且藉由斷開接合導線來結束以開始另一循環。對於螺柱凸塊而言,如所述來產生第一球接合,但接著使導線在球上方附近斷裂。所得金球或"螺柱凸塊"保留於接點上且提供持久、可靠的抵達下伏接點金屬之連接。可接著藉由機械壓力使螺柱凸塊變平(或"壓印")以提供較平頂面及較均勻凸塊高度,而同時將任何保留之導線壓製為球。
基座28之高度可視磷光體負載黏合劑塗層之所需厚度而改變且應足夠高以匹配或自LED延伸超出磷光體負載黏合劑塗層之頂面。高度可超過200 μm,典型基座高度係在20
μm至60 μm範圍內。在一些實施例中,可堆疊一個以上螺柱凸塊以達成所需基座高度。螺柱凸塊或其他形式之基座28亦可具有反射層或可由反射材料製成以使光損失最小。
對於所示之垂直幾何形狀型LED 12而言,對於p型接點24僅需要一個基座28。對於替代性側向幾何形狀LED而言,在側向幾何形狀n型接點26上形成第二n型基座30(以假想線展示),其與p型基座28通常具有相同材料、至大體上相同之高度且使用相同方法形成。
現參看圖1c,晶圓係由覆蓋每一LED 12及其接點22且具有使得其覆蓋/掩埋基座28之厚度的磷光體/黏合劑塗層32掩蓋。對於側向幾何形狀裝置而言,接點26及基座30亦經掩埋。本發明提供在LED 12上以晶圓級沈積磷光體塗層而無需在特定裝置或部件上對準之優勢。改為覆蓋整個晶圓,其提供較簡單及較成本有效之製造方法。可使用不同方法來塗覆磷光體塗層,該等不同方法諸如旋塗、電泳沈積、靜電沈積、印刷、噴射印刷或網板印刷。
在一較佳實施例中,可使用旋塗以磷光體/黏合劑混合物將磷光體沈積於晶圓上。旋塗一般為此項技術中所已知且一般包含將所需量之黏合劑及磷光體混合物沈積於基板中心且以高速旋轉基板。離心加速度使得混合物散布至且最終脫離基板之邊緣。最終層厚度及其他特性取決於混合物性質(黏度、乾燥速率、磷光體百分比、表面張力等)及為旋轉過程所選之參數。對於大晶圓而言其可適用於在基板上施配磷光體/黏合劑混合物,隨後以高速旋轉基板。
在另一實施例中,使用已知電泳沈積方法將磷光體沈積於晶圓上。將晶圓及其LED暴露於含有懸浮於液體中之磷光體顆粒的溶液。在溶液與LED之間施加電信號,其產生使磷光體顆粒遷移至LED且沈積於LED上之電場。該方法通常留下以粉末形式掩蓋於LED上之磷光體。可接著將黏合劑沈積於磷光體上方,其中磷光體顆粒沈入黏合劑中形成塗層32。可使用多種已知方法來塗覆黏合劑塗層,且在一實施例中可使用旋塗來塗覆黏合劑塗層。
可接著視不同因素(諸如所用黏合劑類型)而定使用多種不同固化方法來固化磷光體/黏合劑塗層32。不同固化方法包括(但不限於)熱固化、紫外線(UV)固化、紅外線(IR)固化或空氣固化。
不同因素決定將由最終LED晶片中之磷光體/黏合劑塗層吸收之LED光之量,其包括(但不限於)磷光體顆粒之尺寸、磷光體負載之百分比、黏合劑之類型、磷光體類型與發射光波長之間的匹配效率及磷光體/接合層之厚度。可控制此等不同因素以控制根據本發明之LED晶片之發射波長。
可將不同材料用於黏合劑,材料較佳在固化之後穩固且在可見波長光譜中大體上透明。合適材料包括聚矽氧、環氧樹脂、玻璃、旋塗式玻璃、BCB、聚醯亞胺及聚合物,由於聚矽氧在高功率LED中具有高透明度及可靠性,所以較佳材料為聚矽氧。合適之基於苯基及基於甲基之聚矽氧可自DowChemical購得。在其他實施例中,黏合劑可經
設計以與諸如晶片(半導體材料)及生長基板之部件指數匹配,其可減少全內反射(TIR)且改良光提取。
許多不同磷光體可用於根據本發明之塗層32中。本發明尤其適於發射白光之LED晶片。在根據本發明之一實施例中,LED 12發射在藍色波長光譜中之光且磷光體吸收一些藍光且再發射黃色光。LED晶片10發射藍光與黃光之白光組合。在一實施例中,磷光體包含可購得之YAG:Ce,儘管使用由基於(Gd,Y)3
(Al,Ga)5
O12
:Ce系統(諸如Y3
Al5
O12
:Ce(YAG))之磷光體製成之轉化顆粒可能實現全範圍之寬的黃色光譜發射。其他可用於白色發射LED晶片之黃色磷光體包括:Tb3-x
REx
O12
:Ce(TAG);RE=Y、Gd、La、Lu;或Sr2-x-y
Bax
Cay
SiO4
:Eu。
亦可組合第一磷光體與第二磷光體以獲得不同白色調(暖白色)之較高CRI白色,其中使上文黃色磷光體與紅色磷光體組合。可使用不同紅色磷光體,其包括:Srx
Ca1-x
S:Eu,Y;Y=鹵化物;CaSiAlN3
:Eu;或Sr2-y
Cay
SiO4
:Eu。
可使用其他磷光體以藉由將大體上所有光均轉化為一特定顏色來產生飽和色發射。舉例而言,以下磷光體可用以產生綠色飽和光:SrGa2
S4
:Eu;Sr2-y
Bay
SiO4
:Eu;或
SrSi2
O2
N2
:Eu。
以下列出一些在LED晶片10中用作轉化顆粒之其他合適磷光體,儘管可使用其他磷光體。每一者展現在藍色及/或UV發射光譜中之激發、提供所需峰值發射、具有有效之光轉化且具有可接受之斯托克位移(Stokes shift):黃色/綠色
(Sr,Ca,Ba)(Al,Ga)2
S4
:Eu2+
Ba2
(Mg,Zn)Si2
O7
:Eu2+
Gd0.46
Sr0.31
Al1.23
Ox
F1.38
:Eu2+ 0.06
(Ba1-x-y
Srx
Cay
)SiO4
:Eu
Ba2
SiO4
:Eu2+ 紅色
Lu2
O3
:Eu3+
(Sr2-x
Lax
)(Ce1-x
Eux
)O4
Sr2
Ce1-x
Eux
O4
Sr2-x
Eux
CeO4
SrTiO3
:Pr3+
,Ga3+
CaAlSiN3
:Eu2+
Sr2
Si5
N8
:Eu2+
可使用不同尺寸之磷光體顆粒,包括(但不限於)10奈米-100奈米(nm)尺寸之顆粒至20 μm-30 μm尺寸之顆粒或更大顆粒。較小粒度通常比較大尺寸之顆粒更好地散射及混色以提供較均勻之光。較大顆粒在轉化光方面通常比較小顆粒更有效,但發射較不均勻之光。在一實施例中,粒度係
在2 μm-5 μm之範圍內。在其他實施例中,對於單色光源或多色光源而言,塗層32可包含不同類型之磷光體或可包含多個磷光體塗層。
塗層32亦可在黏合劑中具有不同濃度或負載量之磷光體材料,典型濃度係在30重量%-70重量%之範圍內。在一實施例中,磷光體濃度為約65重量%且較佳均勻地分散在整個黏合劑中。在其他實施例中,塗層可包含多個具有不同濃度之各種磷光體之層或可在沈積透明聚矽氧之第一塗層之後沈積磷光體負載層。
如上文所論述,使基座28(及用於側向裝置之基座30)經塗層32掩埋,其允許塗佈LED晶片10而無需對準。LED晶片之初始塗佈之後,需要進一步處理以暴露基座28。現參看圖1d,薄化或平坦化塗層32以便基座28經由塗層之頂面暴露。較佳在黏合劑已固化後可使用多種不同薄化方法,包括已知機械方法,諸如研磨、精研(lapping)或拋光。其他製造方法可包含刮板以在固化之前薄化塗層或在固化塗層之前亦可使用壓力平坦化。在其他實施例中,可使用物理或化學蝕刻或消融來薄化塗層。薄化方法不僅暴露基座,而且允許平坦化塗層及控制塗層之最終厚度。
平坦化之後,塗層之表面均方根粗糙度應為約10 nm或更小,儘管表面可具有其他表面粗糙度量度。在一些實施例中,在平坦化期間可使表面具有紋理。在其他實施例中,在平坦化之後,可諸如藉由雷射織構、機械成形、蝕刻(化學或電漿)或其他方法來使塗層或其他表面具有紋理
以增強光提取。織構產生高或深0.1 μm-5 μm且較佳0.2 μm-1 μm之表面特徵。在其他實施例中,亦可使LED 12之表面具有紋理或成形以改良光提取。
現參看圖1e,可使用諸如切割、劃線及斷裂或蝕刻之已知方法使個別LED晶片10自晶圓單一化。單一化方法分離每一LED晶片10,每一者具有大體上相同之塗層32厚度及因此大體上相同之磷光體之量及發射特徵。此允許可靠且一致製造具有類似發射特徵之LED晶片10。單一化之後,可將LED晶片安裝於封裝中或安裝於子基板或印刷電路板(PCB)而無需添加磷光體之進一步處理。在一實施例中,封裝/子基板/PCB可具有習知封裝引線,使基座電連接至引線。習知封裝可接著包圍LED晶片及電連接。在另一實施例中,可藉由密封式密封覆蓋物、以在大氣壓下或低於大氣壓之包圍LED晶片之惰性氣氛來封閉LED晶片。
對於LED晶片10而言,自LED 12向基板20發射之光可經由基板穿出LED晶片10而不穿過磷光體/黏合劑塗層32。此對於產生光之特定顏色或色調而言為可接受的。在欲防止或最小化此基板發射之實施例中,基板20可為不透明的以便自LED 12向基板20發射之光被阻斷或吸收以便大多數自LED晶片10發射之光來自穿過塗層32之光。
圖2展示LED晶片40之另一實施例,該LED晶片40類似於上述及圖1a至圖1e中所示之LED晶片10,但具有促進LED晶片光向LED晶片40頂部發射且最小化進入基板20之光的額外特徵。對於如LED晶片10中之類似特徵而言,本文中
將使用相同參考數字。每一LED晶片40包含形成於基板20上且具有依次形成於基板20上之n型層16、活性區域14及p型層18之LED 12。LED晶片40進一步包含n型接點22、p型接點24、p型基座28及塗層32。平坦化塗層32以暴露基座28。LED晶片40或者可具有包含額外基座30之側向幾何形狀。
LED晶片40亦包含反射層42,該反射層42經配置以反射自活性區域向基板20發射之光使其向LED晶片40之頂部返回。此反射層42減少自LED 12之光在自LED晶片40發射之前不穿過轉化材料(諸如經由基板20)之發射且促進向LED晶片40之頂部且經由塗層32之發射。
可以不同方式配置反射層42且可將其配置於LED晶片40中之不同位置,如所示將層42配置於n型層16與基板20之間。該層亦可在基板20上延伸超過LED 12之垂直邊緣。在其他實施例中,反射層僅在n型層16與基板之間。層42可包含不同材料,包括(但不限於)金屬或半導體反射器,諸如分散式布瑞格(Bragg)反射器(DBR)。
如上所述,在一些實施例中,如在LED 12之間的假想線所示,活性區域14及n型層及p型層16、18可為在基板20上之連續層。在此等實施例中,LED直至在將LED晶片40單一化時之步驟之前並不分離。因此,所得LED晶片可具有在LED頂面上之塗層32之層。此可允許活性區域光發射出LED 12之側面,但在利用此等與包圍特徵有關之LED的實施例中,未遭遇磷光體材料之光的此發射與穿過磷光體材
料之光的量相比可為最小。
根據本發明之方法可用於塗佈多種不同裝置及LED。圖3a至圖3e展示具有不同於上述及圖1a至圖1e中所示之LED晶片10之結構的不同LED晶片60。首先參看圖3a,LED晶片60在單一化之前亦處於晶圓級且經展示。其包含不在生長基板上但代之以倒裝晶圓接合至載體基板64之LED 62。在此實施例中,生長基板可包含上述用於圖1a至圖1e中之生長基板20的材料,但在此實施例中,在倒裝晶圓接合之後(或之前)移除生長基板,其中該基板係使用已知研磨及/或蝕刻方法來移除。經由層66將LED 62安裝於載體基板64,該層66通常為一或多個接合/金屬層且其亦用來反射入射於其上之光。在其他實施例中,生長基板或其之至少部分保留。可使生長基板或保留部分成形或具有紋理以增強自LED 62之光提取。
對於該等LED可使用多種不同材料系統,較佳材料系統為使用如上所述已知方法生長之第III族氮化物材料系統。如圖1-5中之LED 12,每一LED 62一般包含夾在n型磊晶層與p型磊晶層70、72之間的活性區域68,儘管亦可包括其他層。因為LED 62係經倒裝晶圓接合,所以頂層為n型層70,而p型層72為配置於活性區域68與接合/金屬層66之間的底層。載體基板可為多種不同已知材料,合適材料為矽。
對於垂直幾何形狀LED晶片60而言,可在每一LED之頂面上包括n型接點74且可在載體基板64上形成p型接點76。
n型及p型接點74、76亦可由使用類似於圖1a至圖1e中所示及上述之第一接點及第二接點22、24之已知技術沈積之習知導電材料製成。亦如上所述,該等LED可具有在LED頂部具有n型接點及p型接點之側向幾何形狀。
現參看圖3b,每一LED晶片60可具有在其第一接點70上形成之基座78,每一基座係由與用於圖1b至圖1e中之基座28的相同材料且使用與其相同之方法形成。如圖3c中所示,可接著藉由較佳包含磷光體負載黏合劑之毯覆式塗層80覆蓋LED晶片晶圓。可使用與用於上述及圖1c至圖1e中所示之塗層32相同之磷光體及黏合劑且可使用相同方法來沈積。塗層80覆蓋且掩埋LED 62、其第一接點74及基座78,其中塗層80經沈積而無需對準步驟。
現參看圖3d,可使用上述方法來平坦化或薄化塗層80以暴露基座78且控制塗層80之厚度。現參看圖3e,可使用上述方法來使個別LED晶片60自晶圓單一化。可接著將此等裝置封裝或安裝於子基板或PCB。在其他實施例中,可移除載體基板,留下經塗佈之LED,其可接著封裝或安裝於子基板或PCB。
倒裝晶圓接合LED亦可具有促進所需方向上之光發射的反射元件或層。圖4展示類似於圖3a至圖3e中所示及上述之LED晶片60之晶圓級LED晶片90。對於類似特徵,本文中使用相同參考數字,且儘管LED晶片90經展示具有垂直幾何形狀LED 62,但應瞭解亦可使用側向幾何形狀LED。LED晶片90包含安裝於可為載體或生長基板之基板64之
LED 62。如上所述,每一LED 62包含活性層68、n型層70、p型層72、p型接點76、n型接點74及基座78,且亦如上所述,磷光體負載黏合劑塗層80形成於LED上方。然而在此實施例中,在LED 62與基板64之間包括反射層92,其可包含高度反射性金屬或反射性半導體結構,諸如DBR。反射層92反射向基板64發射之LED光且幫助防止光進入基板,其中至少一些光可由基板64所吸收。此亦促進自LED晶片90向LED晶片90頂部之光發射。應瞭解在反射層下方或在其他位置亦可包括接合/金屬層(未展示),尤其在基板64為載體基板之實施例中。LED晶片90亦可包含相鄰於p型層72之p接觸層以促進與下方各層之歐姆接觸。
圖5a至圖5d展示根據本發明製造之LED晶片100之另一實施例,其類似於上述及圖3a至圖3e中所示之LED晶片60。然而應瞭解,此方法亦可用於非倒裝晶圓接合之實施例,諸如上述及圖1a至圖1e中所示之實施例。首先參看圖5a,LED晶片100包含安裝於在此情況下為載體基板之基板64的垂直LED 62。應瞭解如上所述亦可使用側向LED。每一LED 62包含如上所述之活性層68、n型層70、p型層72、p型接點76、n型接點74及基座78。然而對於LED晶片100而言,其由可具有固定於亦由上述材料製成之黏合劑中之上述磷光體(及其他)材料的預製塗層102覆蓋。
現參看圖5b,層102係置於LED 62及其基座78上方且覆蓋LED 62及其基座78以提供保形塗層。在一實施例中,在層102與LED晶片100之間可包括接合材料以實現黏著,其
中使用諸如聚矽氧或環氧樹脂之典型黏著劑。為進一步促進保形塗佈,可加熱層102或可施加真空以將層102下拉至LED晶片100上方。亦可以黏合劑並不充分固化之狀態提供層102以便層102更易於符合LED晶片。保形置放層102之後,黏合劑可經曝露至其最終固化。
現參看圖5c,可使用上述方法來平坦化層102以暴露基座78,使其可用於接觸。如圖5d中所示,可接著使用上述方法來單一化LED晶片100。
LED晶片100之製造方法允許藉由控制層102之厚度來精確控制磷光體/黏合劑之厚度。此方法對於LED晶片100之不同所需發射特徵亦允許使用不同層厚度及組成。
圖6a至圖6c展示類似於LED晶片60之根據本發明的LED晶片110之又一實施例。首先參看圖6a,每一LED晶片110具有安裝於可為載體或生長基板之基板64的垂直LED 62。每一LED 62包含如上所述之活性層68、n型層70、p型層72、p型接點76、n型接點74及基座78。在LED 62上方包括由上述材料製成之塗層112,其掩埋基座78。
參看圖6b,在此實施例中,並不平坦化塗層112以暴露基座78。轉而塗層保留於高於基座之位準且移除掩埋基座78之塗層112之一部分,在塗層112中留下凹入部分114。基座78經由凹入部分114暴露用於接觸。可使用多種不同方法移除塗層,諸如習知圖案化或蝕刻方法。現參看圖6c,可接著使用上述方法來單一化LED晶片110。
可結合塗層112之平坦化來使用形成凹入部分114之此方
法。可將層112平坦化至提供LED晶片110之所需發射特徵之為準,其可在基座78上方。可接著形成凹入部分114以接取基座。此允許形成低於塗層之高度經降低之基座,其可減少與形成基座78有關之製造成本。此方法對於形成凹入部分可能需要一些對準,但塗層112仍經塗覆而無需對準。
將在上文LED晶片實施例中之基座描述為包含諸如Au、Cu、Ni或In之導電材料,較佳使用螺柱凸塊方法來形成。或者基座可由不同材料製成且可使用不同方法來形成。圖7展示包含倒裝晶圓接合於載體基板124上之LED 122的LED晶片120之另一實施例。在此實施例中,基座136包含一般呈基座136之形狀形成之半導體材料138。半導體材料138可處於第一接點上或如所示可處於第一磊晶層130上。導電材料之基座層140係包括於半導體材料138之頂面上且延伸至第一磊晶層130之頂面且形成n型接點。
半導體材料138可以多種不同方式來形成且可包含多種不同材料,諸如包含LED磊晶層或生長基板材料之材料,例如GaN、SiC、藍寶石、Si等。在一實施例中,可自磊晶層蝕刻半導體材料138,且接著以基座層140塗佈。在其他實施例中,生長基板之部分在自LED 122移除生長基板期間可保留於磊晶層上。可接著由基座層140來覆蓋保留之生長基板部分。
圖8展示類似於圖7中LED晶片120之仍呈晶圓形式之LED 150的另一實施例,且本文中相同參考數字用於類似特
徵。LED晶片150包含藉由接合/金屬層126接合於載體基板124上之LED 122倒裝晶圓。在每一LED 122上形成基座154,其較佳在n型接點155上。基座154包含大體上呈基座154形狀之可圖案化材料156,其以延伸至第一接點152之導電材料之基座層158所覆蓋。可圖案化材料156可包含與LED製造及操作相容之不同材料,諸如BCB、聚醯亞胺及電介質。可使用已知方法將此等材料形成於LED 112上。或者可使用可圖案化及導電材料(諸如銀環氧樹脂或可印刷墨)來形成基座154,在該情況下可不需要層158。可使用其他製造基座之方法及方式,其中一些描述於John Lau,"Flip-Chip Technologies",McGraw Hill,1996中。
如以上實施例,可由塗佈材料層掩蓋包含LED晶片120及150之晶圓,掩埋LED晶片及其基座。塗佈材料可包含上述磷光體及黏合劑且可使用上述方法來薄化以經由塗佈材料暴露基座。可接著使用上述方法來單一化LED晶片。
本發明亦可用於製造晶圓級發射器陣列。圖9展示包含藉由接合/金屬層176接合於載體基板174上之LED 172倒裝晶圓的晶圓級LED陣列170之一實施例。LED在第一與第二磊晶層180、182之間包含活性區域178,使第一接點184在第一磊晶層180上。在第一接點184上包括基座186且磷光體負載黏合劑塗料之塗層188掩蓋LED 172、接點184及基座186,其中薄化塗層以暴露基座186之頂部。然而對於LED陣列170而言,並不單一化個別LED晶片。反而在LED 172表面上包括互連金屬墊190,從而以平行方式互連基座
186之暴露頂部。施加於金屬墊190之電信號傳導至具有其耦接至金屬墊190之基座186的LED,照明呈陣列之LED。應瞭解LED陣列可包含許多不同數目之以不同方式排列之LED,該等不同方式諸如為列或區,其係視由金屬墊190互連之LED而定。
圖10展示根據本發明之LED陣列200的另一實施例,其亦具有倒裝晶圓接合於載體基板204之LED 202,每一LED 202在第一與第二磊晶層210、212之間包含活性區域208。第一接點214係在第一磊晶層210上,具有形成於第一接點214上之基座216。在LED 202、第一接點214及基座216上方包括磷光體負載黏合劑塗層218,基座216之頂面係經暴露。藉由電絕緣接合層220將LED 202安裝於載體基板204且p接點222係在每一LED 202與絕緣接合層220之間。導電通道224在p接點與塗層218表面之間在LED 202之間延伸且各別金屬墊226在每一柱224與各別相鄰基座216之間的塗層118表面上延伸。此配置在LED 202之間提供導電路徑以使得LED 202呈串聯陣列連接,藉由絕緣接合層220使在LED之間的導電路徑與基板絕緣。施加於金屬墊之電信號流經每一LED使其呈陣列發光。應瞭解LED陣列200可包含許多不同數目之以不同方式排列之LED,該等不同方式諸如為列或區,其視由金屬墊226互連之LED而定。
可根據本發明來製造多種具有不同結構之不同LED晶片。圖11展示類似於圖1a至圖1e中所示及上述之LED晶片10配置之根據本發明的LED晶片350之另一實施例,且對
於類似特徵而言,本文中使用相同參考數字。LED晶片350具有垂直幾何形狀且包含LED 12,該等LED 12中之每一者在n型磊晶層與p型磊晶層16、18之間包含活性區域14。在p型接點24上形成基座28,其中磷光體負載黏合劑塗層32覆蓋LED 12。然而在此實施例中,LED 12係在透明基板352上,其允許與LED 12相對在基板352上形成反射層354。來自LED 12之光可穿過基板352且自反射層354反射回同時經受最小損失。反射層354係展示於接點22與基板352之間,但應瞭解可反射層354可不同配置,諸如為最底層,使接點22在反射層354與基板352之間。
圖12亦展示亦類似於圖1a至圖1e中LED晶片配置之根據本發明的LED晶片370之另一實施例。在此實施例中之LED晶片370具有側向幾何形狀且包含LED 12,該等LED 12中之每一者在n型磊晶層與p型磊晶層16、18之間包含活性區域14。蝕刻p型層18及活性區域14之一部分以暴露n型層16,其中p型接點24係在p型層18上且n型接點26係在n型層16上。p型基座28係在p型接點24上且n型基座30係在n型接點26上。磷光體負載黏合劑塗層32覆蓋LED 12,使基座28、30經由塗層32暴露。LED 12係在透明基板372上且與LED 12相對在基板372上包括反射層374。LED 12具有在每一LED 12頂部具有p型接點24及p型基座28之側向幾何形狀。反射層374亦反射來自LED之光,使光經受最小經由基板372之損失。
根據本發明可製造LED晶片之許多不同變體且圖13展示
在生長基板404上具有在n型層與p型層406、408之間具有活性區域405之LED 402之LED晶片400的另一實施例。應瞭解,LED 402亦可於生長基板薄化或生長基板移除之後獲得。LED亦具有n型及p型接點407、409。切割或單一化LED 402且將其覆晶接合於子基板/載體晶圓410。在子基板/載體晶圓410上形成導電迹線412,使每一LED 402安裝於迹線412上,使第一迹線412a與n型層406電接觸且第二迹線412b與p型層408接觸。可使用習知迹線,其包含使用諸如濺鍍之已知技術沈積之鋁(Al)或Au。藉由可用使用諸如Au或金/錫焊料凸塊或螺柱凸塊之已知材料的習知方法配置之覆晶接合413來將LED 402安裝於迹線412。
應進一步瞭解,在圖13中及在上下文論述之實施例中的基座亦可由以導電層塗佈之絕緣材料製成。在一實施例中,基座可包含基板材料或子基板/載體晶圓物料。對於LED晶片400而言,可將子基板/載體晶圓製造為具有基座,使每一LED安裝於基座之間。在基座上可形成導電層,使用其他配置與導電迹線接觸或與LED接觸。應進一步瞭解,基座可具有多種不同形狀及尺寸,且在一實施例中可包含具有安裝於杯中之LED的反射杯。可使用其他配置,以與導電迹線或LED接觸之導電層塗佈該杯。在平坦化磷光體黏合劑塗層期間,可暴露杯之頂部以便接觸。在其他實施例中,杯可具有其自身的在平坦化期間可暴露之基座。
在第一迹線412a上形成n型基座414且在第二迹線412b上形成
p型基座416,使用上述方法來形成兩個基座。在LED 402上包括磷光體/黏合劑塗層418,掩埋基座414、416。可接著平坦化塗層418以暴露基座414、416以便接觸或在其他實施例中可在塗層中形成凹座以暴露基座414、416。可接著使用上述方法來單一化LED晶片。
結合LED晶片400描述之製造方法允許使用優質單一化LED 402,其具有為安裝至晶圓404選擇之所需發射特徵。該配置亦允許將LED 402安裝至晶圓,經由蝕刻材料以形成間隔,在LED 402之間具有較大間隔而未浪費有用磊晶材料。
圖14展示根據本發明之LED晶片500之又一實施例,其具有安裝於載體基板之單一化側向幾何形狀LED 502。LED 502中之每一者在n型層與p型層506、508之間包含活性區域504,其所有均在生長基板510上依次形成。基板510可為多種不同材料,較佳基板為諸如藍寶石之透明材料。單一化LED 502同時至少一部分生長基板510仍保留。
接著將LED 502安裝於載體基板512,其中基板在下方。載體基板512在透明基板516上包含第一磷光體/黏合劑塗層514。第一塗層514可為固持LED 502之黏著劑或可使用額外黏著劑材料。
在p型層508上提供p型接點518且在n型層506上提供n型接點520。接點518、520可包含多種不同材料,較佳材料為反射性材料。藉由具有反射性,接點518、520反射活性區域光使載體基板512成為第一發射面。如上所述,在p型
接點518上形成p型基座522且在n型接點520上形成n型基座524。在LED 502上方形成第二磷光體/黏合劑塗層526,掩埋基座522、524。如上所述,可接著平坦化第二塗層526以暴露基座522、524。
可接著單一化LED晶片500且此配置提供具有由第一及第二塗層514、526提供之磷光體層圍繞的LED 502之LED晶片500。經單一化之LED晶片500亦可經封裝為習知覆晶裝置,除具有提供白色發射LED覆晶而無需進一步磷光體處理之第一及第二塗層以外。此實施例提供使用優質單一化LED 502之能力的其他優勢(對於安裝於晶圓載體晶圓512而言具有所需發射特徵),以使得所得LED晶片502具有良好品質。亦可將LED 502安裝於晶圓,經由蝕刻材料以形成間隔,在LED 502之間具有較大間隔而未浪費有用磊晶材料。
圖15a至圖15d展示根據本發明之LED晶片600之又一實施例。首先參看圖15a,每一LED晶片包含LED 602,該等LED 602中之每一者在n型層與p型層606、608之間具有活性區域604,其所有均在生長基板610上依次形成,該生長基板610較佳為諸如藍寶石之透明材料。LED 602具有側向幾何形狀,具有在n型層606上之反射n型接點612及在p型層608上之反射p型接點614。在n型接點612上形成n型基座616且在p型接點614上形成p型基座618。將第一磷光體/黏合劑塗層620提供在LED 602上,起初掩埋基座616、618,接著平坦化塗層以暴露基座。
現參看圖15b,形成溝槽622穿過基板610且部分地進入塗層620中,將溝槽配置於LED 602之間。可使用多種不同方法(諸如藉由蝕刻或切割)形成溝槽622。現參看圖15c,可在基板610之溝槽側上方形成第二磷光體/黏合劑塗層624,填充溝槽622。必要時可接著平坦化第二塗層。參看圖15d,可單一化LED晶片600,使LED 602由第一及第二塗層620、624所提供之磷光體層圍繞。LED晶片600提供與圖14中LED晶片500類似之優勢且提供可提供白光發射無需額外磷光體處理之優質覆晶裝置。
再參看圖15a及圖15b,作為形成溝槽622之替代,可徹底移除生長基板610以暴露n型層606之底面。在暴露之n型層上方可接著形成第二磷光體/黏合劑塗層624且必要時將其平坦化。
本發明亦可用於覆蓋個別LED而非形成於LED晶片晶圓中之LED。在此等實施例中,可單一化LED晶片且接著將其安裝於封裝中或至子基板或PCB。根據本發明可接著塗佈且平坦化LED晶片以暴露基座以便接觸。
儘管本發明已參考其特定較佳組態來加以詳細描述,但其他型式係有可能的。因此,本發明之精神及範疇不應限於上述型式。
10‧‧‧晶圓級LED晶片/LED晶片
12‧‧‧半導體LED/LED
14‧‧‧活性層/區域
16‧‧‧摻雜磊晶層/摻雜層/第一層/第一磊晶層
18‧‧‧摻雜磊晶層/摻雜層/第二層/第二磊晶層
20‧‧‧基板
22‧‧‧第一接點
24‧‧‧第二接點
25‧‧‧垂直假想線
26‧‧‧n型接點
28‧‧‧基座
30‧‧‧基座
32‧‧‧塗層
40‧‧‧LED晶片
42‧‧‧反射層
60‧‧‧LED晶片
62‧‧‧LED
64‧‧‧載體基板
66‧‧‧接合/金屬層
68‧‧‧活性區域
70‧‧‧n型磊晶層/n型層/第一接點
72‧‧‧p型磊晶層/p型層
74‧‧‧n型接點/第一接點
76‧‧‧p型接點
78‧‧‧基座
80‧‧‧塗層
90‧‧‧LED晶片
92‧‧‧反射層
100‧‧‧LED晶片
102‧‧‧預製塗層/層
110‧‧‧LED晶片
112‧‧‧塗層/層
114‧‧‧凹入部分
120‧‧‧LED晶片
122‧‧‧LED
124‧‧‧載體基板
126‧‧‧接合/金屬層
130‧‧‧第一磊晶層
136‧‧‧基座
138‧‧‧半導體材料
140‧‧‧基座層
150‧‧‧LED/LED晶片
154‧‧‧基座
155‧‧‧n型接點
156‧‧‧可圖案化材料
158‧‧‧基座層
170‧‧‧LED陣列
172‧‧‧LED
174‧‧‧載體基板
176‧‧‧接合/金屬層
178‧‧‧活性區域
180‧‧‧第一磊晶層
182‧‧‧第二磊晶層
184‧‧‧第一接點
186‧‧‧基座
188‧‧‧塗層
190‧‧‧金屬墊
200‧‧‧LED陣列
202‧‧‧LED
204‧‧‧載體基板
208‧‧‧活性區域
210‧‧‧第一磊晶層
212‧‧‧第二磊晶層
214‧‧‧第一接點
216‧‧‧基座
218‧‧‧磷光體負載黏合劑塗層/塗層
220‧‧‧電絕緣接合層
222‧‧‧p接點
224‧‧‧導電通道/柱
226‧‧‧金屬墊
350‧‧‧LED晶片
352‧‧‧透明基板/基板
354‧‧‧反射層
370‧‧‧LED晶片
372‧‧‧透明基板/基板
374‧‧‧反射層
400‧‧‧LED晶片
402‧‧‧生長基板/晶圓
405‧‧‧活性區域
406‧‧‧n型層
407‧‧‧n型接點
408‧‧‧p型層
409‧‧‧p型接點
410‧‧‧基板/載體晶圓
412‧‧‧導電迹線/迹線
412a‧‧‧第一迹線
412b‧‧‧第二迹線
413‧‧‧覆晶接合
414‧‧‧n型基座/基座
416‧‧‧p型基座/基座
418‧‧‧磷光體/黏合劑塗層
500‧‧‧LED晶片
502‧‧‧LED
504‧‧‧活性區域
506‧‧‧n型層
508‧‧‧p型層
510‧‧‧生長基板512
514‧‧‧第一磷光體/黏合劑塗層/第一塗層
516‧‧‧透明基板
518‧‧‧p型接點/接點
520‧‧‧n型接點/接點
522‧‧‧p型基座/基座
524‧‧‧n型基座/基座
526‧‧‧第二磷光體/黏合劑塗層/第二塗層
600‧‧‧LED晶片
602‧‧‧LED
604‧‧‧活性區域
606‧‧‧n型層
608‧‧‧p型層
610‧‧‧基板
612‧‧‧n型接點
614‧‧‧p型接點
616‧‧‧n型基座/基座
618‧‧‧p型基座/基座
620‧‧‧第一磷光體/黏合劑塗層/第一塗層/塗層
622‧‧‧溝槽
624‧‧‧第二磷光體/黏合劑塗層/第二塗層
圖1a至圖1e為根據本發明之一種方法中各製造步驟之LED晶片晶圓的一實施例之截面圖;圖2為具有一反射層之根據本發明之LED晶片晶圓的另
一實施例之截面圖;圖3至圖3e為根據本發明之另一方法中各製造步驟之倒裝晶圓接合LED晶片晶圓的一實施例之截面圖;圖4為具有一反射層之根據本發明之LED晶片晶圓的另一實施例之截面圖;圖5a至圖5d為利用預製塗層之根據本發明之方法中各製造步驟之LED晶片晶圓的另一實施例之截面圖;圖6a至圖6c為在塗層中具有凹座之根據本發明之方法中各製造步驟之LED晶片晶圓的另一實施例之截面圖;圖7為根據本發明之LED晶片晶圓的另一實施例之截面圖;圖8亦為根據本發明之LED晶片晶圓的另一實施例之截面圖;圖9為根據本發明之LED陣列的一實施例之截面圖;圖10為根據本發明之LED陣列的另一實施例之截面圖;圖11為具有一透明基板之根據本發明之LED晶片晶圓的一實施例之截面圖;圖12為具有一透明基板之根據本發明之LED晶片晶圓的另一實施例之截面圖;圖13為根據本發明之覆晶LED晶片晶圓的另一實施例之截面圖;圖14為具有磷光體負載載體之LED晶片的另一實施例之截面圖;圖15a至圖15d為利用溝槽化基板之根據本發明之方法中
各製造步驟之LED晶片晶圓的另一實施例之截面圖。
10‧‧‧晶圓級LED晶片/LED晶片
12‧‧‧半導體LED/LED
14‧‧‧活性層/區域
16‧‧‧摻雜磊晶層/摻雜層/第一層/第一磊晶層
18‧‧‧摻雜磊晶層/摻雜層/第二層/第二磊晶層
20‧‧‧基板
22‧‧‧第一接點
24‧‧‧第二接點
25‧‧‧垂直假想線
26‧‧‧n型接點
28‧‧‧基座
30‧‧‧基座
32‧‧‧塗層
Claims (121)
- 一種製造發光二極體(LED)晶片之方法,其包含:提供複數個LED;在該等LED上沈積基座,該等基座中之每一者與該等LED之一者電接觸;在該等LED上方形成一塗層,該塗層掩埋至少一些該等基座;及平坦化該塗層,在該等LED上留下至少一些該塗層,同時暴露至少一些該等經掩埋之基座。
- 如請求項1之方法,其中該等LED晶片發射白光。
- 如請求項1之方法,其進一步包含在每一該等LED上沈積一接點,該等基座係形成於該等接點上。
- 如請求項1之方法,其中將該等LED提供於一生長基板上。
- 如請求項1之方法,其中將該等LED安裝於一載體基板上。
- 如請求項5之方法,其中該載體基板包含一磷光體層。
- 如請求項1之方法,其中該等LED包含一生長基板之至少一部分。
- 如請求項7之方法,其中使該基板成形或具有紋理。
- 如請求項1之方法,其中在該等LED上方形成一塗層之該步驟包含提供一預製塗層且將其置於該等LED上。
- 如請求項1之方法,其中將該等LED提供於一基板上,其進一步包含在該基板中形成溝槽且形成一填充該等溝槽 之第二塗層。
- 如請求項1之方法,其進一步包含在平坦化之前固化該塗層。
- 如請求項1之方法,其進一步包含在平坦化之後固化該塗層。
- 如請求項1之方法,其進一步包含在該塗層上形成一表面紋理。
- 如請求項13之方法,其中在該平坦化期間形成該表面紋理。
- 如請求項13之方法,其中藉由雷射織構來形成該表面紋理。
- 如請求項1之方法,其進一步包含單一化該等LED。
- 如請求項1之方法,其中該塗層包含一磷光體負載黏合劑。
- 如請求項17之方法,其中該磷光體負載黏合劑包含多個磷光體。
- 如請求項1之方法,其中該塗層包含散射顆粒。
- 如請求項1之方法,其中該塗層包含多個具有不同組成之層。
- 如請求項17之方法,其中該黏合劑包含選自由以下各物組成之群的材料中之一者:聚矽氧、環氧樹脂、玻璃、旋塗式玻璃、BCB、聚醯亞胺及聚合物。
- 如請求項17之方法,其中該磷光體包含YAG:Ce。
- 如請求項17之方法,其中該磷光體包含一選自由以下各 物組成之群的材料:Y3 Al5 O12 :Ce(YAG);Tb3-x REx O12 :Ce(TAG),RE=Y、Gd、La、Lu及Sr2-x-y Bax Cay SiO4 :Eu。
- 如請求項1之方法,其中該平坦化包含選自由研磨、精研及拋光組成之群的方法中之一者。
- 如請求項1之方法,其中該平坦化包含選自由刮板、壓力平坦化、蝕刻及消融組成之群的一或多種方法。
- 如請求項1之方法,其中該塗層覆蓋該等LED,其係藉由選自由旋塗、電泳沈積、靜電沈積、印刷、噴射印刷及網板印刷組成之群的方法中之一者實現。
- 如請求項1之方法,其中使用螺柱凸塊來形成該基座。
- 如請求項1之方法,其進一步包含在至少部分該等LED周圍形成一第二塗層之步驟。
- 如請求項28之方法,其中該第二塗層具有一與該塗層不同之組成。
- 如請求項28之方法,其進一步包含平坦化該第二塗層之步驟。
- 如請求項1之方法,其進一步包含在該平坦化塗層上沈積一金屬墊,其互連至少一些該等基座以形成一LED陣列。
- 如請求項16之方法,其進一步包含以一密封劑密封該等單一化LED中之一者。
- 如請求項16之方法,其進一步包含將該等LED中之一者安裝於一子基板或印刷電路板(PCB)。
- 如請求項1之方法,其中該平坦化產生一均勻塗層厚度。
- 如請求項1之方法,其中該塗層具有一小於平均塗層厚度50%之總厚度變化。
- 一種製造LED晶片之方法,其包含:將複數個LED覆晶接合於一載體基板上;形成一與該等LED中之每一者電接觸之導電基座;在該等LED上形成一毯覆式塗層,該塗層掩埋至少一些該等基座;及平坦化該塗層以暴露至少一些該等經掩埋之基座。
- 如請求項36之方法,其中該載體基板包含電迹線,該等LED經安裝與該等電迹線接觸。
- 如請求項37之方法,其中在該等電迹線上形成該等基座。
- 如請求項36之方法,其中該等LED晶片發射白光。
- 一種製造經塗佈半導體裝置之方法,其包含:在一基板上提供複數個半導體裝置;在該等半導體裝置上沈積基座,其每一者係與該等半導體裝置中之一者電接觸;在該等半導體裝置上形成一毯覆式塗層,該塗層掩埋至少一些該等基座;及平坦化該塗層,在該等半導體裝置上留下至少一些該塗層材料,同時暴露至少一些該等經掩埋之基座以便接觸。
- 一種發光二極體(LED)晶片晶圓,其包含:複數個LED;複數個基座,其每一者係與該等LED中之一者電接觸;及一塗層,其至少部分地覆蓋該等LED,至少一些該等基座延伸穿過且抵達該塗層之表面且暴露在該塗層之該表面;該等複數個基座之至少一者包含暴露在與該塗層之頂面相同高度之頂部。
- 如請求項41之LED晶片晶圓,其中該等LED係在一基板晶圓上。
- 如請求項41之LED晶片晶圓,其進一步包含複數個接點,其每一者係在該等LED中之一者上,在該等接點上形成至少一些該等基座。
- 如請求項42之LED晶片晶圓,其中該基板晶圓能夠分離為LED晶片。
- 如請求項41之LED晶片晶圓,其中該塗層具有一均勻厚度。
- 如請求項41之LED晶片晶圓,其中該塗層具有一小於平均塗層厚度50%之總厚度變化。
- 如請求項41之LED晶片晶圓,其中該塗層具有一紋理化表面。
- 如請求項41之LED晶片晶圓,其中該塗層包含多個磷光體。
- 如請求項41之LED晶片晶圓,其中該塗層包含散射顆粒。
- 如請求項41之LED晶片晶圓,其中該塗層包含一磷光體負載黏合劑。
- 如請求項50之LED晶片晶圓,其中該黏合劑包含選自由以下各物組成之群的材料中之一者:聚矽氧、環氧樹脂、玻璃、旋塗式玻璃、BCB、聚醯亞胺及聚合物。
- 如請求項50之LED晶片晶圓,其中該磷光體包含YAG:Ce。
- 如請求項41之LED晶片晶圓,其中該等基座包含一或多個螺柱凸塊。
- 如請求項41之LED晶片晶圓,其中該等LED係由來自第III族氮化物材料系統之材料製成。
- 如請求項42之LED晶片晶圓,其中該基板晶圓包含一生長基板。
- 如請求項42之LED晶片晶圓,其中該基板晶圓包含一載體基板。
- 如請求項41之LED晶片晶圓,其中該等LED在一LED陣列中互連。
- 如請求項41之LED晶片晶圓,一在該塗層之該表面上之金屬墊互連至少一些該等暴露之基座以形成一LED陣列。
- 如請求項42之LED晶片晶圓,其進一步包含一與該基板晶圓一體形成之反射層。
- 如請求項42之LED晶片晶圓,其中該基板晶圓包含一磷光體負載黏合劑層。
- 如請求項41之LED晶片晶圓,其中該等LED包含一生長基板之至少一部分。
- 如請求項41之LED晶片晶圓,其中該等LED係提供於一基板上,其進一步包含在該基板中之溝槽及一填充該等溝槽之第二塗層。
- 如請求項41之LED晶片晶圓,其中該塗層包含多個具有不同組成之層。
- 如請求項41之LED晶片晶圓,其進一步包含在至少部分該等LED周圍形成一第二塗層之步驟。
- 如請求項64之LED晶片晶圓,其中該第二塗層具有一與該塗層不同之組成。
- 如請求項41之LED晶片晶圓,其能夠自該等LED及塗層發射白光。
- 一種發光二極體(LED)晶片,其包含:一LED;一與該LED電接觸之基座;及一塗層,其至少部分地覆蓋該LED,該基座延伸穿過且抵達該塗層之表面且暴露在該塗層之該表面;該基座包含暴露在與該塗層之頂面相同高度之頂部。
- 如請求項67之LED晶片,其中該LED發射白光。
- 如請求項67之LED晶片,其中該LED係在一基板上。
- 如請求項67之LED晶片,其進一步包含一在該LED上之 接點,在該接點上形成該等基座。
- 如請求項67之LED晶片,其中該塗層包含一磷光體負載黏合劑。
- 如請求項67之LED晶片,其中該基座包含一或多個螺柱凸塊。
- 如請求項67之LED晶片,其中該LED包含來自第III族氮化物材料系統之材料。
- 如請求項69之LED晶片,其中該基板包含一生長基板。
- 如請求項69之LED晶片,其中該基板包含一載體基板。
- 如請求項69之LED晶片晶圓,其進一步包含一與該基板一體形成之反射層。
- 一種發光二極體(LED)封裝,其包含:一LED晶片;一與該等LED晶片電接觸之基座;及一塗層,其至少部分地覆蓋該LED晶片,該基座延伸穿過且抵達該塗層之表面且暴露在該塗層之該表面;封裝引線,該基座與該等封裝引線中之一者電連接;及包圍該等LED晶片及電連接之封裝。
- 一種發光二極體(LED)封裝,其包含:一LED晶片;一與該等LED晶片電接觸之基座;及一塗層,其至少部分地覆蓋該LED晶片,該基座延伸穿過且抵達該塗層之表面且暴露在該塗層之該表面;及封裝引線,該基座係與該等封裝引線中之一電連接, 其中藉由一密封式密封覆蓋來封閉該晶片。
- 如請求項78之LED封裝,其中一惰性氣氛在大氣壓下或低於大氣壓下包圍該LED晶片。
- 如請求項1之方法,其中該等基座係直接沈積在該等LED上。
- 如請求項1之方法,其中該等LED包含磊晶層及在該等磊晶層上之接點;且其中該等基座係直接沈積在該等接點上。
- 如請求項1之方法,其中該等基座係經暴露以供外部連接。
- 如請求項1之方法,其中該等複數個基座之至少一者包含暴露在與該塗層之頂面相同高度之頂部。
- 如請求項1之方法,其中該塗層之折射率匹配該等LED之特徵之折射率。
- 如請求項40之方法,其中該等基座係直接沈積在該等半導體裝置上。
- 如請求項40之方法,其中該等半導體裝置包含磊晶層及在該等磊晶層上之接點;且其中該等基座係直接沈積在該等接點上。
- 如請求項40之方法,其中該等基座係經暴露以供外部連接。
- 如請求項40之方法,其中該等基座之至少一者包含暴露在與該塗層之頂面相同高度之頂部。
- 如請求項40之方法,其中該塗層之折射率匹配該等半導 體裝置之特徵之折射率。
- 如請求項41之LED晶片晶圓,其中該等基座係直接沈積在該等LED上。
- 如請求項41之LED晶片晶圓,其中該等LED包含磊晶層及在該等磊晶層上之接點;且其中該等基座係直接沈積在該等接點上。
- 如請求項41之LED晶片晶圓,其中該等基座係經暴露以供外部連接。
- 如請求項41之LED晶片晶圓,其中該等複數個基座之至少一者包含暴露在與該塗層之頂面相同高度之頂部。
- 如請求項41之LED晶片晶圓,其中該塗層之折射率匹配該等LED之特徵之折射率。
- 如請求項67之LED晶片,其中該基座係直接沈積在該LED上。
- 如請求項67之LED晶片,其中該LED包含磊晶層及在該等磊晶層之一者上之一接點;且其中該基座係直接沈積在該接點上。
- 如請求項67之LED晶片,其中該基座係經暴露以供外部連接。
- 如請求項67之LED晶片,其中該基座包含暴露在與該塗層之頂面相同高度之頂部。
- 如請求項67之LED晶片,其中該塗層之折射率匹配該LED之特徵之折射率。
- 如請求項77之LED封裝,其中該基座係直接沈積在該 LED晶片上。
- 如請求項77之LED封裝,其中該LED晶片包含磊晶層及在該等磊晶層之一者上之一接點;且其中該基座係直接沈積在該接點上。
- 如請求項77之LED封裝,其中該基座係經暴露以供外部連接。
- 如請求項77之LED封裝,其中該基座包含暴露在與該塗層之頂面相同高度之頂部。
- 如請求項77之LED封裝,其中該塗層之折射率匹配該LED晶片之特徵之折射率。
- 如請求項78之LED封裝,其中該基座係直接沈積在該LED晶片上。
- 如請求項78之LED封裝,其中該LED晶片包含磊晶層及在該等磊晶層之一者上之一接點;且其中該基座係直接沈積在該接點上。
- 如請求項78之LED封裝,其中該基座係經暴露以供外部連接。
- 如請求項78之LED封裝,其中該基座包含暴露在與該塗層之頂面相同高度之頂部。
- 如請求項78之LED封裝,其中該塗層之折射率匹配該LED晶片之特徵之折射率。
- 一種發光二極體(LED)晶片晶圓,其包含:複數個LED;複數個基座,其每一者係與該等LED中之一者電接 觸;及一塗層,其至少部分地覆蓋該等LED之每一者之一表面以上,至少一些該等基座延伸穿過且抵達該塗層之表面且暴露在該塗層之該表面。
- 如請求項110之LED晶片晶圓,其中該等基座係直接沈積在該等LED上。
- 如請求項110之LED晶片晶圓,其中該等LED包含磊晶層及在該等磊晶層上之接點;且其中該等基座係直接沈積在該等接點上。
- 如請求項110之LED晶片晶圓,其中該等基座係經暴露以供外部連接。
- 如請求項110之LED晶片晶圓,其中該等複數個基座之至少一者包含暴露在與該塗層之頂面相同高度之頂部。
- 如請求項110之LED晶片晶圓,其中該塗層之折射率匹配該等LED之特徵之折射率。
- 一種發光二極體(LED)晶片,其包含:一LED;一基座,其與該LED電接觸;及一塗層,其至少部分地覆蓋該LED之一表面以上,該基座延伸穿過且抵達該塗層之表面且暴露在該塗層之該表面。
- 如請求項116之LED晶片,其中該基座係直接沈積在該LED上。
- 如請求項116之LED晶片,其中該LED包含磊晶層及在該 等磊晶層之一者上之一接點;且其中該基座係直接沈積在該接點上。
- 如請求項116之LED晶片,其中該基座係經暴露以供外部連接。
- 如請求項116之LED晶片,其中該基座包含暴露在與該塗層之頂面相同高度之頂部。
- 如請求項116之LED晶片,其中該塗層之折射率匹配該LED之特徵之折射率。
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Also Published As
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WO2008115213A2 (en) | 2008-09-25 |
KR20090115156A (ko) | 2009-11-04 |
EP2111649B1 (en) | 2017-09-27 |
CN101627481A (zh) | 2010-01-13 |
EP2111649A2 (en) | 2009-10-28 |
US20080173884A1 (en) | 2008-07-24 |
WO2008115213A3 (en) | 2008-12-18 |
TW200840092A (en) | 2008-10-01 |
KR101398655B1 (ko) | 2014-06-19 |
US9024349B2 (en) | 2015-05-05 |
JP2010517290A (ja) | 2010-05-20 |
CN102544267A (zh) | 2012-07-04 |
CN102544267B (zh) | 2015-01-28 |
CN101663767A (zh) | 2010-03-03 |
CN101627481B (zh) | 2012-03-21 |
WO2008115213A8 (en) | 2009-04-30 |
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