CN101627481B - 一种晶片级荧光体涂层方法和利用该方法制造的器件 - Google Patents
一种晶片级荧光体涂层方法和利用该方法制造的器件 Download PDFInfo
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Abstract
一种制造发光二极管(LED)芯片的方法,包括通常在衬底上提供多个LED。基座沉积在发光二极管上,每个基座电接触一个发光二极管。在发光二极管上形成涂层,使该涂层掩埋至少一些基座。然后使涂层平面化以露出至少一些掩埋的基座,同时在发光二极管上留下至少一些所述涂层。然后露出的基座可以被例如通过引线键合而接触。本发明公开了类似的制造其中LED被倒装芯片键合在载体衬底上的发光二极管LED芯片的方法,以及制造其它半导体器件的方法。本发明还公开了使用所公开的方法制造的LED芯片晶片及LED芯片。
Description
这项发明是在政府的支持下完成的,合同号为USAF 05-2-5507。政府对本发明具有一定的权利。
技术领域
本发明涉及制造半导体器件的方法,特别是用于发光二极管的晶片级涂层的方法。
背景技术
发光二极管(LED)是将电能转换为光的固态器件,一般包括夹在相反的掺杂层之间的一层或多层半导体材料的有源层。当在掺杂层两端施加偏压时,空穴和电子注入到有源层中,在那里它们复合产生光。光从该有源层和发光二极管的所有表面发出。
常规的LED不能从其有源层产生白光。从一个发蓝色光的LED所发出的光被发光二极管周围的黄色荧光体、聚合物或染料转换为白光,其中典型的荧光体是掺铈的钇铝石榴石(Ce:YAG)。[参见Nichia公司的白光LED,零件编号NSPW300BS,NSPW312BS等;又参见Lowrey的美国专利No.5959316,“荧光体LED器件的多重封装”]。周围的荧光体材料将一些发光二极管的蓝光波长“向下转换”,将其颜色改变为黄色。一部分蓝光穿过荧光体而不被改变,而很大一部分光线被向下转换为黄色。发光二极管发出蓝色和黄色光,它们合并提供白光。在另一种方案中,从发射紫色或紫外光的LED发出的光由LED周围的多色荧光体或染料转为白光。
一个在LED上涂覆荧光体层的常规方法是采用注射器或喷嘴在发光二极管上注入混合有环氧树脂或硅聚合物的荧光体。但是,使用这种方法可能难以控制荧光体层的几何结构和厚度。因此,从LED以不同的角度发出的光可能会通过不同数量的转换材料,这可导致LED具有随视角而不均匀的色温。由于几何结构和厚度难以控制,也可能难以一致性地生产具有相同或相似发射特性的LED。
另一种常规的涂覆LED的方法是模板印刷(stencil printing),如Lowery的欧洲专利申请EP1198016A2中所述。多个发光半导体器件被排列在一个衬底上,相邻的发光二极管之间具有期望的距离。模板上提供有与LED对准的开口,模板的孔略大于LED,且模板比LED厚。模板定位在衬底上,其中每个发光二极管分别位于模板的相应开口中。然后将一种组合物沉积在模板的开口中,覆盖发光二极管,一种典型的组合物是在可被热或光固化的硅酮聚合物中的荧光体。在孔被填充后,将模板从衬底上移除,模板组合物被固化为固态。
类似于上述的注射器方法,使用模板方法也难以控制含荧光体的聚合物的几何结构和厚度。模板组合物可能无法完全填充模板的开口,使得所产生的层并不均匀。含荧光体的组合物还可能粘在模板的开口中,这减少了留在LED上的组合物的量。模板的开口也可能与LED没有对准。这些问题可能会导致发光二极管具有非均匀的色温,且难以一致性地生产具有相同或相似的发射特性的发光二极管。
已考虑了LED的各种涂层工艺,包括旋涂、喷涂、静电沉积(ESD)和电泳沉积(EPD)。例如旋涂或喷涂的工艺通常要在荧光体沉积的过程中使用粘结材料,而其它工艺需要在沉积荧光体颗粒/粉末后立即添加一种粘结剂以稳定荧光体颗粒/粉末。
对于这些方法,关键的挑战是在涂层工艺之后对器件上引线焊垫的接驳。对于典型的硅酮粘结材料以及其它粘结材料如环氧树脂或玻璃,难以用标准晶片制造技术中处理引线焊垫的接驳。硅酮与常用的晶片制造材料如丙酮以及一些显影液和抗蚀剂剥落液不兼容。这将限制对特定的硅酮和工艺步骤的挑选和选择。硅酮也是高温(大于150℃)固化的,它高于常用的光致抗蚀剂的玻璃转变温度。固化的含有荧光体的硅酮薄膜也难以刻蚀,在氯和CF4等离子体中的蚀刻速率非常缓慢,且对固化的硅酮树脂的湿法腐蚀通常是效率低下的。
发明内容
本发明公开了在晶片级制造半导体器件如LED芯片的新方法,且公开了采用该方法制造的LED芯片和LED芯片晶片。根据本发明,一种制造发光二极管(LED)芯片的方法包括通常在衬底上提供多个发光二极管。基座形成在发光二极管上,每个基座与一个发光二极管电气接触。在上述发光二极管上形成涂层,所述涂层掩埋至少一些基座。然后将涂层平面化,在LED上留下一些涂层材料,同时露出至少一些掩埋的基座,使它们可用于接触。本发明披露了类似的用于制造包含倒装芯片安装在载体衬底上的发光二极管芯片的方法。根据本发明,类似的方法也可用于制造其它半导体器件。
采用根据本发明的方法制造的发光二极管(LED)芯片晶片的一个实施例包括在衬底晶片上的多个发光二极管和多个基座,每个基座与一个发光二极管电气接触。一个涂层至少部分地覆盖发光二极管,至少一些基座延伸穿过和到达涂层的表面。这些基座在涂层的表面露出。
采用根据本发明的方法制造的发光二极管(LED)芯片的一个实施例包括在衬底上的一个LED和与该发光二极管电气接触的基座。一个涂层至少部分覆盖发光二极管,所述基座延伸穿过和到达涂层的表面,且在涂层的表面露出。
根据本发明的某些方面,所述涂层可包括荧光体颗粒,它将至少一些从LED芯片的有源区发出的光向下转换以产生白光,从而制造白光LED芯片。
本发明的这些和其它方面以及优点,通过下面以举例方式说明发明特点的详细说明和附图将变得明显。
附图简介
图1a-1e是根据本发明的一种方法的各制造步骤中的LED芯片晶片的一个实施例的剖视图;
图2是根据本发明的具有反射层的LED芯片晶片的另一个实施例的剖视图;
图3-3e是根据本发明的另一种方法的各制造步骤中的倒装晶片键合的LED芯片晶片的一个实施例的剖视图;
图4是根据本发明的具有反射层的LED芯片晶片的另一个实施例的剖视图;
图5a-5d是根据本发明的利用预制涂层的一种方法的各制造步骤中的LED芯片晶片的另一个实施例的剖视图;
图6a-6c根据本发明的具有在涂层中的凹槽的一种方法的各制造步骤中的LED芯片晶片的另一个实施例的剖视图;
图7是根据本发明的LED芯片晶片的另一实施例的剖视图;
图8也是根据本发明的LED芯片晶片的另一实施例的剖视图;
图9是根据本发明的LED阵列的一个实施例的剖视图;
图10是根据本发明的LED阵列的另一个实施例的剖视图;
图11是根据本发明的具有透明衬底的LED芯片晶片的一个实施例的剖视图;
图12是根据本发明的具有透明衬底的LED芯片晶片的另一个实施例的剖视图;
图13是根据本发明的倒装芯片的LED芯片晶片的一个实施例的剖视图;
图14是根据本发明的具有加入了荧光体的载体衬底的LED芯片的一个实施例的剖视图;
图15a-15d是根据本发明的利用沟槽衬底的一种方法的各制造步骤中的LED芯片晶片的另一个实施例的剖视图。
具体实施方式
本发明提供了特别适用于半导体器件如发光二极管的晶片级涂层的制造方法。本发明还提供了采用这些方法制造的半导体器件,如发光二极管。本发明允许在晶片级对发光二极管涂覆一个向下转换层(如加入了荧光体的硅酮),同时仍然允许对一个或多个用于引线键合的接触的接驳。根据本发明的一个方面,导电的基座/柱形成在LED的一个或两个接触(键合垫)上,而发光二极管在晶片级。这些基座可以采用已知的技术制造,如电镀、无电镀覆、凸点植球(stud bumping),或真空沉积。然后晶片可以被毯式涂覆(blanket coating)有向下转换涂层,掩埋LED、接触和基座。每个基座作为其接触的垂直延伸,虽然毯涂的向下转换涂层会暂时覆盖基座,该涂层可被平面化和减薄,以露出基座的顶面或顶端部分。该基座应足够高(10-100μm),以凸出期望的最终涂层厚度。经过平面化后,基座被露出,可用于外部连接如引线键合。这一工艺发生在晶片级,且在随后的加工步骤中,各个LED芯片可以使用已知的工艺从晶片分开/逐一分开。
本发明无需复杂的晶片制造工艺,以在毯式涂覆后获得对引线焊垫的接驳。替代地,利用了一个简单和成本节约的方法。它允许半导体器件的晶片级涂层,而不需要对准。可广泛使用各种各样的涂层技术,如旋涂加入了荧光体的硅酮混合物,或电泳沉积荧光体然后再毯式涂覆硅酮或其它粘结材料。机械平面化使晶片上的厚度均匀,且涂层厚度的均匀性可以在宽的厚度范围(如1-100μm)上实现。通过控制最后涂层的厚度,白光LED芯片的颜色点可被微调,包括使用迭代的方法(如研磨、测试、研磨等),这将产生严格分类的白光LED。这种方法也可推广到大型晶片尺寸。
这里参照一些实施例描述本发明,但应理解的是,本发明可以许多不同的形式实施,而不应被理解为仅限于所记载的实施例。特别是,本发明在下文针对用通常包括一个加入了荧光体的粘结剂的向下转换涂层(“荧光体/粘结剂涂层”)涂覆发光二极管来描述,但应理解的是,本发明可使用用于向下转换、保护、光提取或散射光线的其它材料来涂覆发光二极管。同时也应理解,该荧光体粘结剂可以具有散射或光提取颗粒或材料,而且涂层可以是电激活的。根据本发明的该方法也可用于涂覆不同的材料到其它半导体器件上。此外,可在发光二极管上形成单个或多个涂层和/或层。涂层可不包括任何荧光体,或包括一种或多种荧光体、散射颗粒和/或其它材料。涂层也可包括用于提供向下转换的例如有机染料的材料。对于多个涂层和/或层,每个层和/或涂层相对于其它层和/或涂层,可以包括不同的荧光体、不同的散射颗粒、不同的光学特性如透明度、折射率和/或不同的物理特性。
也应明白,当一个部件,如层、区或衬底被称为是“在”另一个部件“上”时,它可以是直接在其它部件上,或者中间可以有其它的部件。此外,相对的术语,如“更内”、“更外”、“更上”、“以上”、“更低”、“底下”和“下面”,以及类似的术语,在此可用于描述一层或其它区的关系。应理解的是,这些术语用于涵盖器件的不同方向,除了附图中描绘的方向以外。
虽然术语第一、第二等可在此用于描述各种部件、组分、区、层和/或部分,这些部件、组分、区、层和/或部分不应该被这些术语限制。这些术语只是用来区分一个部件、组分、区、层或部分与其它的区、层或部分。因此,下文讨论的第一部件、组分、区、层或部分也可以被称为第二部件、组分、区、层或部分,而不会背离本发明的教导。
本发明的实施例参照剖视图进行描述,这些附图是本发明理想化实施例的示意图。因此可以预计,作为例如制造技术和/或公差的结果,附图的形状会有变化。本发明实施例不应被理解为受这里所示区域的特定形状限制,而是包括例如从制造所造成的形状偏差。由于正常的制造公差,一个说明或描述为方形或长方形的区域通常会有倒圆或弯曲的特征。因此,附图中显示的区域是示意性的,其形状不用于说明器件区域的确切形状,也不用于限制本发明的范围。
图1a-1e描述根据本发明的方法制造的晶片级LED芯片10。现在参照图1a,显示了在其制造工艺中的晶片级的发光二极管芯片10。也就是说,发光二极管芯片10还没有经过被从晶片分离/逐一分开到个别LED芯片之前的所有必要的步骤。虚线显示LED芯片10之间的分离或划片线,在经过另外的制造步骤后,如图1e所示,发光二极管芯片可分为单个器件。图1a-1e只显示了在晶片级的两个芯片,但应理解的是,从单一晶片可形成更多的LED芯片。例如,在制造一毫米(mm)见方大小的LED芯片时,在一个3英寸晶片上可以制造多达4500个LED芯片。
每个LED芯片10包括一个半导体LED 12,它可以有许多以不同方式安排的不同半导体层。LED的制造和操作是本领域已知的,只在此简要讨论。发光二极管10的层可以采用已知的工艺制造,其中一个合适的制造工艺采用金属有机化学气相沉积(MOCVD)。该发光二极管12的层一般包括夹在相反掺杂的第一和第二外延层16、18中间的有源层/区14,所有这些层都先后形成在衬底20上。在这个实施例中,发光二极管12被显示为衬底20上分开的器件。这种分开,可通过将有源层14和掺杂层16、18的一些部分向下蚀刻到衬底20以在发光二极管12之间形成开口的区域而实现。在下面更详细描述的其它实施例中,有源层14和掺杂层16、18可以保持为衬底20上的连续的层,且在LED芯片被逐一分开时可分为各个器件。
应理解,在发光二极管12中也可包括额外的层和部件,包括但不限于缓冲区、成核、接触和电流扩展层以及光提取层和元件。有源区14可以包括单量子阱(SQW)、多量子阱(MQW)、双异质结或超晶格结构。在一个实施例中,第一外延层16是一个n型掺杂层和第二外延层18是p型掺杂层,虽然在其它的实施例中,第一层16可以是p型掺杂的和第二层18是n-型掺杂的。第一和第二外延层16、18以下分别称为n型和p型层。
该发光二极管12的区域14和层16、18可以从不同的材料系制造,优选的材料系是基于III族氮化物的材料系。III族氮化物是指由氮和元素周期表的第III族元素之间形成的那些半导体化合物,第III族元素通常是铝(Al)、镓(Ga)和铟(In)。这个术语还可以指三元和四元化合物,如铝镓氮化物(AlGaN)和铝铟镓氮化物(AlInGaN)。在一个优选实施例中,n型层和p型层16、18是氮化镓(GaN)且有源区14是氮化铟镓InGaN。在其它的实施例中,n型层和p型层16、18可以是AlGaN、铝镓砷化物(AlGaAs)或铝镓铟砷磷化物(AlGaInAsP)。
衬底20可由许多材料制造,例如蓝宝石、碳化硅、氮化铝(AlN)、GaN,其中一个合适的衬底是4H聚合物型碳化硅,但其它聚合物型碳化硅也可使用,包括3、6H和15R聚合物型。碳化硅具有一定的优势,例如相对于蓝宝石具有与III族氮化物更接近的晶格匹配和得到质量更高的第III族氮化硅薄膜。碳化硅也有非常高的热导率,使碳化硅上III族氮化物器件的总输出功率不受衬底的散热所限制(如在蓝宝石上形成的一些器件可能出现的情况)。碳化硅衬底可从位于北卡罗莱纳州达勒姆的Cree研究公司买到,它们的制造方法列举在科学文献和美国专利No.34 861;4 946 547;和5 200 022中。在所示的实施例中,衬底20在晶片级,有多个发光二极管12形成在晶片衬底20上。
每个发光二极管12可以具有第一和第二接触22、24。在显示的实施例中,该发光二极管具有第一接触22在衬底20上和第二接触24在p型层18上的垂直几何结构。第一接触22显示为衬底上的一层,但是当LED芯片被从晶片逐一分开时,第一接触22也将分开,使得每个LED芯片10有自己的第一接触22的部分。施加到第一接触22的电信号传播到n型层16和施加到第二接触24的信号传播到p型层18。对于III族氮化物器件,众所周知的是,薄的半透明的电流扩展层通常覆盖部分或全部的p型层18。应当理解,第二接触24可以包括一层通常为例如铂(Pt)的金属或例如铟锡氧化物(ITO)的透明导电氧化物。第一和第二接触22、24以下分别称为n型和p型接触。
本发明也可用于具有横向几何结构的发光二极管,其中两个接触都位于发光二极管的顶部。p型层18和有源区的一部分通过例如刻蚀被去除,露出在n型层16的一个接触台面。有源区14和p型层18的被去除部分的边界由垂直的虚线25表示。横向的第二n型接触26(也用虚线表示)被提供在n型层16的台面上。接触可以包括使用已知的沉积技术沉积的已知材料。
现在参照图1b,根据本发明,一个p型接触基座28形成在p型接触24上,它用于在发光二极管12被涂覆后提供到p型接触24的电连接。基座28可以由许多不同的导电材料形成,可以使用许多不同的已知物理或化学沉积工艺形成,如电镀、无电镀覆或凸点植球,其中优选的接触基座是金(Au)且使用凸点植球形成。这种方法通常是最容易和最节约成本的办法。基座28可由Au以外的其它导电材料形成,如铜(Cu)、镍(Ni)或铟,或它们的组合。
形成凸点植球的工艺是公知的,这里只作简要讨论。凸点植球(studbump)通过在常规的引线键合中使用“球焊”工艺的一种变型被放在接触(键合垫)上。在球焊过程中,键合线的尖端熔化,形成一个球体。焊线工具将该球体压靠在接触上,施加机械力、热和/或超声能量以产生一个金属连接。接下来焊线工具将金线延伸到在板、衬底或引线框架上的接触垫,并与该垫形成“针脚键合(stitch bond)”,并通过切断焊线而结束以开始另一个周期。对于凸点植球,第一球焊是如上所述的,但焊线然后在球上附近被打破。由此产生的金球,或“凸点植球”仍然留在接触上,且提供了至下面的接触金属的一个永久的、可靠的连接。然后所述“凸点植球”可以通过机械压力变平以提供一个平的顶部表面和更均匀的凸点高度,而同时将任何剩余的焊线压为球形。
基座28的高度可以根据加入了荧光体的粘结剂涂层的期望厚度而变化,且应足够高,以匹配或延伸到高于LED的加入了荧光体的粘结剂涂层的顶面。基座的高度可超过200μm,典型的基座高度范围为20至60μm。在一些实施例中,一个以上的凸点植球可堆叠起来以实现期望的基座高度。凸点或其它形式的基座28也可以具有反射层或由反光材料制造,以使光损失最少。
对于所显示的垂直几何结构类型的发光二极管12,只需要用于p型接触24的一个基座28。对于替代的横向几何结构的LED,第二n型基座30(虚线显示)形成在横向几何结构的n型接触26上,通常为同一材料,以与p型基座28具有基本相同的高度,且使用相同的工艺形成。
现在参照图1c,晶片被覆盖每个发光二极管12及其接触22的荧光体/粘结剂涂层32所毯式覆盖,涂层32的厚度使其可以覆盖/掩埋基座28。对于横向几何结构的器件,接触26和基座30也被掩埋。本发明提供了在晶片级在发光二极管12上沉积荧光体涂层的优点,而不需要对准特定的器件或特征。取而代之的是,整个晶片被覆盖,这提供了更简单和更成本节约的制造工艺。该荧光体涂层可使用不同的工艺施加,如旋涂、电泳沉积、静电沉积、印刷、喷墨印刷或丝网印刷。
在优选实施例中,该荧光体可通过旋涂在荧光体/粘结剂混合物中沉积在晶片上。旋涂是本领域公知的,一般包括在衬底的中心沉积所需量的粘结剂和荧光体混合物且以高速旋转衬底。离心加速度导致混合物扩散到衬底的边缘并且甚至离开。最后的层厚度和其它性质取决于混合物的属性(粘度、干燥速度、荧光体的百分比、表面张力等)和旋涂工艺的参数选择。对于大型晶片,在高速旋转衬底之前将荧光体/胶合剂的混合物分布在衬底上是有利的。
在另一实施例中,使用称为电泳沉积的方法将荧光体沉积在晶片上。晶片及LED暴露到含悬浮在液体中的荧光体颗粒的溶液中。在溶液和LED之间施加电信号,产生一个电场,进而导致荧光体颗粒迁移到和沉积在发光二极管上。该工艺通常使荧光体以粉末状覆盖在发光二极管上。然后在荧光体上沉积粘结剂,使荧光体颗粒陷入粘结剂中形成涂层32。粘结剂涂层可使用许多已知的方法施加,在一个实施例中,粘结剂涂层可使用旋涂来施加。
荧光体/粘结剂涂层32然后可以使用许多不同的固化方法固化,这取决于不同的因素,如使用的粘结剂类型。不同的固化方法包括但不限于热、紫外线(UV)、红外线(IR)或晾干(air curing)。
有不同的因素能决定LED的光被最终LED芯片中的荧光体/粘结剂涂层吸收的量,包括但不限于荧光体颗粒的大小、加入的荧光体的百分比、粘结材料的类型、荧光体的类型和发射光波长之间的匹配效率、荧光体/粘结层的厚度。根据本发明这些不同的因素是可以控制的,以控制LED芯片的发射波长。
不同的材料可用作粘结剂,其中优选的材料被硬化后很坚固且在可见光波长的光谱中基本透明。适合的材料包括硅酮、环氧树脂、玻璃、旋涂玻璃、BCB、聚酰亚胺、聚合物和它们的混合物,优选的材料是硅酮,因为其在高功率LED中透明度和可靠性高。适合的苯基和甲基的硅酮可从道氏()化工公司购买。在其它实施例中,粘结材料可以加工为与例如芯片(半导体材料)和生长的衬底等特征的折射率相匹配,这可以减少全内反射(TIR)和改善光提取。
许多不同的荧光体可用于根据本发明的涂层32中。本发明特别适合于发白光的LED芯片。在根据本发明的一个实施例中,LED 12发出蓝色波长光谱的光且荧光体吸收一些蓝色光和再发出黄色光。LED芯片10发出的是蓝色和黄色光相结合的白光。在一个实施例中,荧光体包括商用YAG:Ce,但使用基于(Gd,Y)3(Al,Ga)5O12:Ce系的荧光体制成的转换颗粒,如Y3Al5O12:Ce(YAG),全范围的广泛黄色光谱发光也是可能的。可用于白色发光LED芯片的其它黄色荧光体包括:
Tb3-xRExO12:Ce(TAG);RE=Y,Gd,La,Lu;或
Sr2-x-yBaxCaySiO4:Eu。
第一和第二荧光体也可合并,以得到不同的白色色调(暖白色)的更高CRI(color rendering index,显色指数)的白色,其中上述黄色荧光体与红色荧光体结合。可用的不同红色荧光体包括:
SrxCa1-xS:Eu,Y;Y=卤化物;
CaSiAlN3:Eu;或
Sr2-yCaySiO4:Eu。
通过转换所发出的基本上所有光线为某一特定的颜色,其它荧光体可用于产生饱和的色彩发射。例如,下面的荧光体可用于产生绿色饱和的光:SrGa2S4:Eu;Sr2-yBaySiO4:Eu;或SrSi2O2N2:Eu。
下面列出了一些额外的适合用作LED芯片10的转换颗粒的荧光体,但其它荧光体也可以使用。每种荧光体显示为在蓝色和/或紫外发射谱中被激发,提供了理想的峰值发射,具有有效的光转换,并具有可接受的斯托克斯频移(Stokes shift):
黄色/绿色
(Sr,Ca,Ba)(Al,Ga)2S4:Eu2+
Ba2(Mg,Zn)Si2O7:Eu2+
Gdo.46Sro.31Al1.23OxF1.38:Eu2+ 0.06
(Ba1-x-ySrxCay)SiO4:Eu
Ba2SiO4:Eu2+
红色
Lu2O3:Eu3+
(Sr2-xLax)(Ce1-xEux)O4
Sr2Ce1-xEuxO4
Sr2-xEuxCeO4
SrTiO3:Pr3+,Ga3+
CaAlSiN3:Eu2+
Sr2Si5N8:Eu2+
可用的不同大小的荧光体颗粒包括但不限于10-100纳米(nm)的颗粒至20-30μm大小的颗粒,或更大的颗粒。尺寸较小的颗粒一般在散射和混色方面比尺寸较大的颗粒更好,以提供更均匀的光。较大的颗粒相对于较小的颗粒通常能更有效地转换光,但发射较不均匀的光。在一个实施例中,颗粒的尺寸在2-5μm范围中。在其它一些实施例中,涂层32可以包括用于单色或多色光源的不同类型的荧光体或可以包括多种荧光体涂层。
涂层32也可以在粘结剂中含有不同浓度的或加入不同的荧光体材料,其中一个典型的浓度是30-70%重量百分比的范围。在一个实施例中,荧光体浓度大约是65%的重量百分比,最好是均匀分散在整个粘结剂中。在其它的实施例中,所述涂层可以包括不同浓度或类型的多层荧光体,或者是先沉积第一层纯硅酮涂层,然后沉积加入了荧光体的层。
如上所述,基座28(和用于横向器件的基座30)被涂层32掩埋,这允许对LED芯片10进行涂覆而不需要对准。在LED芯片的最初涂层之后,需要进一步加工以露出基座28。现在参照图1d,涂层32被减薄或平面化,使得基座28通过涂层的顶部表面露出。可使用许多不同的减薄工艺,包括已知的机械工艺,如磨削、研磨或抛光,最好在粘结剂已固化后。其它的制造方法可以包括在涂层固化之前用一个刮刀减薄涂层,或者在涂层固化之前也可以使用压力平坦化。仍然在其它的实施例中,可以利用物理或化学蚀刻或剥蚀(ablation)来减薄涂层。减薄工艺不仅露出了基座,而且还允许平面化涂层和控制涂层的最后厚度。
平坦化之后,涂层的表面均方根粗糙度应大约为10纳米或更小,虽然该表面可以有其它的表面粗糙度测量。在一些实施例中。表面可以在平坦化过程中织构。在其它一些实施例,在平坦化之后,涂层或其它表面可被织构,如利用激光织构、机械成形、蚀刻(化学或等离子体)或其它工艺,以增强光提取。织构的结果是使表面特征为0.1-5μm高或深,最好是0.2-1μm。在其它一些实施例中,发光二极管12的表面也可以织构或成形以改善光提取。
现在参照图1e,各个LED芯片10可利用已知的方法从晶片被逐一分开,如划片、划线和切断,或蚀刻。逐一分开工艺分开的每个LED芯片10分别有大致相同厚度的涂层32,因此具有基本上相同的荧光体量和发光特性。这允许可靠地和一致地制造具有类似发光特性的LED芯片10。在逐一分开之后,LED芯片可以安装在一个封装中,或安装到一个次基台(submount)或印刷电路板(PCB)上,而不需要进一步的工艺来添加荧光体。在一个实施例中,所述封装/次基台/印制电路板可具有常规的封装引线,与所述基座电连接。然后传统的封壳包围LED芯片和进行电连接。在另一实施例中,LED芯片可被气密密封覆盖,其中围绕LED芯片的惰性气体气氛等于或低于大气压。
对于LED芯片10,发光二极管12向衬底20发出的光可以通过衬底逸出LED芯片10,而没有通过荧光体/粘结剂涂层32。这对于产生一定颜色或色度的光是可以接受的。在要防止或尽量减少这种衬底发光的实施例中,衬底20可以是不透明的,使发光二极管12对衬底20发出的光被阻断或吸收,使得LED芯片10发出的大部分光是穿过涂层32的光。
图2显示与以上所述和在图1a-1e中显示的LED芯片10类似的LED芯片40的另一个实施例,但具有另外的特征以促使LED芯片发出的光朝向LED芯片40的上方和使传递到衬底20的光最少。对于类似于LED芯片10的特征,这里将使用同样的参考标号。每个LED芯片40包括形成在基底20上的发光二极管12,具有在衬底20上先后形成的n型层16、有源区14和p-18型层。LED芯片40还包括n型接触22、p型接触24、p型基座28和涂层32。涂层32被平面化以露出基座28。替换地,LED芯片40可以具有横向的几何结构,带有另外的基座30。
LED芯片40还包括一个反射层42,它被安排用于将有源区向衬底20发出的光反射回LED芯片40的顶部。该反射层42减少了发光二极管12发射的在从LED芯片40发出之前未穿过转换材料的光,如通过衬底20的光,并促使LED芯片40的发光朝向顶部和穿过涂层32。
反射层42可以不同的方式和不同的位置安排在LED芯片40中,图中所示的层42被安排在n型层16和衬底20之间。该层还可以在衬底20上延伸到超出LED芯片12的垂直边缘。在其它的实施例中,反射层只在n型层16和衬底之间。层42可以包括不同的材料,包括但不限于金属反射器或如分布布拉格反射器(DBR)的半导体反射器。
如上所述,在一些实施例中,有源区14以及n型层和p型层16、18可以是衬底20上的连续的层,如LED 12之间的虚线所示。在这些实施例中,直到在LED芯片40被逐一分开的步骤时才分开发光二极管。因此,由此产生的LED芯片可能在发光二极管的顶面上具有一层涂层32。这可以允许有源区发的光逸出发光二极管12的侧表面,但在利用这种发光二极管及其周围特征的实施例中,这个没有遇到荧光体材料的发光的量与通过荧光体材料的光量相比是微不足道的。
根据本发明的方法可用于涂覆许多不同的器件和发光二极管。图3a-3e显示不同的LED芯片60,其结构与以上参照图1a-1e所述的LED芯片10不同。首先参照图3a,LED芯片60也处于晶片级和显示为在逐一分开之前。它包括的发光二极管62不是在生长衬底上的,而是倒装晶片键合在载体衬底64上的。在该实施例中,生长衬底可以包括参照图1a-1e中的生长衬底描述的材料,但在该实施例中,生长衬底在倒装晶片键合之后(或之前)被去除,其中使用已知的磨削和/或蚀刻工艺来去除衬底。这些LED 62通过层66安装在载体衬底64上,层66通常是一个或多个键合/金属层,其也用于反射照射到其上的光。在其它的实施例中,生长衬底或至少其一部分仍然保留。生长衬底或其一部分可被成形或织构,以提高从发光二极管62的光提取。
许多不同的材料系可用于发光二极管,其中优选的材料系是如上所述使用已知的生长工艺生长的III族氮化物材料系。类似于图1a-1e中的LED 12,每个发光二极管62一般包括夹在n型和p型外延层70、72之间的有源区68,虽然也可包括其它层。由于发光二极管62是倒装晶片键合的,最顶层是n型层70,而p型层72是被安排在有源区68和键合/金属层66之间的最底层。载体衬底可以是很多不同的已知材料,其中适当的材料是硅。
对于垂直几何结构的LED芯片60,一个n型接触74可以被包含在每一个发光二极管的顶面上,一个p型接触76可形成在载体衬底64上。n型和p型接触74、76也可以由使用已知技术沉积的常规导电材料形成,类似于上面所述并且参照图1a-1e显示的第一和第二接触22、24。如上所述,发光二极管可以有横向几何结构,其中n型和p型接触在发光二极管的顶部。
现在参照图3b,每个LED芯片60可以有形成在其第一接触70上的基座78,每个基座由与如以上参照图1b-1e中所述的基座28同样的材料并使用相同的方法形成。如图3c所示,LED芯片晶片可以由毯式涂层80覆盖,毯式涂层80最好由加入荧光体的粘结剂组成。可以使用与上述和参照图1c-1e显示的涂层32同样的荧光体和粘结剂,并可以使用同样的方法沉积。涂层80覆盖和掩埋发光二极管62、它们的第一接触74和基座78,其中涂层80的沉积不需要对准的步骤。
现在参照图3d,涂层80可使用上述的方法被平面化或减薄,以露出基座78和控制涂层80的厚度。现在参照图3e,各个LED芯片60可使用上述方法从晶片被逐一分开。然后这些器件可以被包装或安装到次基台或印制电路板。在其它实施例中,载体衬底可以去掉,留下一个被涂覆的LED,然后将其包装或安装在次基台或印制电路板上。
倒装晶片键合的发光二极管也可以具有反射元件或层,促使光在期望方向的发射。图4显示在晶片级的LED芯片90,与图3a-3e所示和上述的LED芯片60类似。对于类似的特征,这里使用相同的参考标号,虽然LED芯片90显示为具有垂直几何结构的发光二极管62,应当理解的是,也可以使用横向几何结构的LED。组成LED芯片90的LED 62安装到衬底64,其可以是载体或生长衬底。每个发光二极管62如上所述包括有源层68、n型层70、p型层72、p型接触76、n型接触74和基座78,加入了荧光体的粘结剂涂层80也如上所述形成在发光二极管上。但是,在此实施例中,包括在LED 62和衬底64之间的反射层92,它可以包括一个高反射率的金属或如DBR的反射半导体结构。反射层92反射LED的向衬底64发出的光,有助于防止光传递到衬底,在那里至少一些光可被衬底64吸收。这也促使LED芯片90发出的光向LED芯片90的上方发射。应当理解的是,也可以在反射层之下或在其它地方包括键合/金属层(未显示),尤其是在衬底64是载体衬底的实施例中。LED芯片90也可以包括一个毗邻p型层72的p型接触层,以促进与下面层的欧姆接触。
图5a-5d显示根据本发明制造的LED芯片100的另一个实施例,它类似于以上所述和参照图3a-3e显示的LED芯片60。但是,应当理解,这种方法也可用于没有倒装晶片键合的实施例,如上面所述和显示在图1a-1e中的实施例。首先参照图5a,LED芯片100包括安装在衬底64上的垂直LED 62,衬底64在本实施例中是载体衬底。应当理解也可以使用横向LED,如上所述。每个发光二极管62包括有源层68、n型层70、p型层72、p型接触76、n型接触74和基座78,如上所述。然而,LED芯片100被预制的涂层102所覆盖,涂层102可以具有如上所述的荧光体(和其它)材料,该荧光体(和其它)材料被固定在也由如上所述的材料形成的粘结剂中。
现在参照图5b,层102放在发光二极管62上并覆盖LED 62及其基座78以提供保形涂层。在一个实施例中,在层102和LED芯片100之间可以包含一种用于粘结的键合材料,其中使用的典型粘结剂例如是硅酮或环氧树脂。为进一步促进保形涂层,可以加热层102,或者可以使用真空以将层102向下拉在LED芯片100上。层102还可按其中粘结剂没有完全固化的状态提供,使层102更容易与LED芯片保形。在层102的保形安置之后,粘结剂可以进行其最后固化。
现在参照图5c,层102可以使用上述方法平面化,以露出基座78,使它们可用于接触。如图5d所示,然后可以使用上述方法逐一分开LED芯片100。
LED芯片100的制造方法允许通过控制层102的厚度来准确地控制荧光体/粘结剂的厚度。这种方法还可以针对LED芯片100的不同的期望发光特性使用不同的层厚度和组分。
图6a-6c显示根据本发明的另一实施例LED芯片110,类似于LED芯片60。首先参照图6a,每个LED芯片110具有安装在可以是载体或生长衬底的衬底64上的垂直LED 62。每个发光二极管62包括有源层68、n型层70、p型层72、p型接触76、n型接触74和基座78,如上所述。由上文所述的材料形成的涂层112被包括在发光二极管62上,掩埋基座78。
参照图6b,在这实施例中,涂层112没有被平面化以露出基座78。替代地,涂层保留在高于基座的高度,且掩埋基座78的一部分涂层112被去除,在涂层112中留下凹进部分114。基座78通过凹进部分114露出以便用于接触。许多不同的方法可以用来去除涂层,如传统的构图(patterning)或蚀刻过程。现在参照图6c,LED芯片110然后可以使用上述方法被逐一分开。
该形成凹进部分114的方法可与涂层112的平面化配合使用。层112可以被平面化至能提供LED芯片110的期望发射特性的高度,其可能高于基座78。然后可以形成凹进部分114以接驳基座。这样可以形成低于涂层的降低高度的基座,降低与形成基座78相关的制造成本。该工艺需要一些形成凹进部分的对准,但涂层112的施加仍然不需要对准。
在以上LED芯片实施例中的基座被描述为包括导电材料,如Au、Cu、Ni或In,优选地使用凸点植球的工艺形成。此外,可以使用不同的材料和可用不同的方法形成基座。图7显示LED芯片120的另一个实施例,包括倒装晶片键合在载体衬底124上的发光二极管122。在此实施例中,基座136包括通常为基座136形状的半导体材料138。半导体材料138可在第一接触上,或如图所示在第一外延层130上。导电材料的基座层140在半导体材料138的顶面上且延伸到第一外延层130的顶部表面和形成n型接触。
半导体材料138可用许多不同的方式形成,且可以包括很多不同的材料,如包括LED外延层的材料或生长的衬底材料,如氮化镓、碳化硅、蓝宝石、硅等。在一个实施例中,半导体材料138可从外延层蚀刻掉,然后涂覆一基座层140。在其它一些实施例中,在从发光二极管122去除生长衬底的过程中,部分的生长衬底可以留在外延层上。然后剩余的生长衬底部分可以被基座层140覆盖。
图8仍然显示在晶片级的LED芯片150的另一个实施例,类似于图7的LED芯片120,这里相同的参考标号用于表示类似的特征。LED芯片150包括通过键合/金属层126倒装晶片键合在载体衬底124上的LED122。基座154形成在每个发光二极管122上,最好是在n型接触155上。基座154包括基本上为基座154形状的可构图材料156,它被延伸到第一接触152的导电材料的基座层158覆盖。该可构图材料156可以包括与LED的制造和操作兼容的不同材料,如BCB、聚酰亚胺和电介质。这些材料可用已知工艺形成在发光二极管112上。另外,基座154可使用可构图和导电材料形成,如银环氧树脂或可打印的墨水,在这种情况下,可以不需要层158。还可以使用其它的制造基座的方式和方法,其中一些描述在John Lau的“Flip-Chip Technology(倒装芯片技术)”一书中,McGraw Hill,1996年。
类似于上述实施例,包括LED芯片120和150的晶片可以被一层涂层材料毯式覆盖,掩埋LED芯片和它们的基座。该涂层材料可以包括荧光体及粘结剂,如上文所述,可以利用上述的方法减薄以穿过涂层材料露出基座。LED芯片然后可以使用上述方法逐一分开。
本发明还可以用来制作晶片级发光阵列。图9显示晶片级LED阵列170的一个实施例,它包括通过键合/金属层176倒装晶片键合在载体衬底174上的发光二极管172。发光二极管包括夹在第一和第二外延层180、182之间的一个有源区178,其中第一接触184在第一外延层180上。基座186包含在第一接触184上,加入了荧光体的粘结剂涂层188毯式涂覆发光二极管172、接触184和基座186,其中该涂层被减薄以露出基座186的顶部。但是,对于LED阵列170,各个LED芯片不用被逐一分开。替代地,一个互连金属垫190包括在发光二极管阵列172的表面上,以并联方式互连基座186的露出顶部。施加到金属垫190的电信号将其基座186与金属垫190连接的发光二极管导通,使阵列中的发光二极管照亮。应当理解,根据被金属垫190互连的发光二极管,LED阵列可以包括以不同方式排列的很多不同数量的发光二极管,如按行或块排列。
图10显示根据本发明的LED阵列200的另一实施例,也具有倒装晶片键合到载体衬底204的发光二极管202,每个发光二极管202包括夹在第一和第二外延层210、212之间的一个有源区208。第一接触214在第一外延层210上,其中基座216形成在第一接触214上。加入了荧光体的粘结剂涂层218在发光二极管202、第一接触214和基座216上,其中基座216的顶面露出。这些LED 202通过电绝缘键合层220安装在载体衬底204上,在每个发光二极管202和绝缘键合层220之间有一个p型接触222。导电通孔224形成在p型接触和位于发光二极管202之间的涂层218的表面之间,且相应的金属垫226形成在每个柱224和对应的相邻基座216之间的涂层118的表面上。这种安排提供了发光二极管202之间的导电路径,使得发光二极管202被串联排列,LED之间的导电路径通过绝缘键合层220与衬底隔离。施加到金属垫的电信号流过阵列中的每个发光二极管使它们发光。应当理解,根据被金属垫226互连的发光二极管,LED阵列200可以包括以不同的方式排列的很多不同数量的发光二极管,如按行或块排列。
根据本发明可以制造具有不同结构的许多不同的LED芯片。图11显示根据本发明的LED芯片350的另一个实施例,类似于如上所述和在图1a-1e中所示的LED芯片10,这里对于类似的特征使用相同的参考标号。LED芯片350具有垂直的几何结构且包括发光二极管12,其中每个发光二极管包括夹在n型和p型外延层16、18之间的有源区14。基座28形成在p型接触24上,其中加入荧光体的粘结剂涂层32覆盖LED 12。然而,在该实施例中,发光二极管12在透明衬底352上,这允许将反射层354形成在发光二极管12对面的衬底352上。来自发光二极管12的光可以通过衬底352和从反射层354反射回来并同时经历最小的损失。图示的反射层354在接触22和衬底352之间,但应当理解,反射层354可有不同的安排,如作为最底的层,其中接触22位于反射层354和衬底352之间。
图12还显示根据本发明的LED芯片370的另一实施例,也与在图1a-1e中显示的LED芯片类似。在该实施例中,LED芯片370具有横向几何结构,且包括发光二极管12,其中发光二极管包括夹在n型和p型外延层16、18之间的有源区14。一部分p型层18和有源区14被蚀刻以露出n型层16,其中p型接触24在p型层18上和n型接触26在n型层16上。p型基座28在p型接触24上和n型基座30在n型接触26上。加入了荧光体的粘结剂涂层32覆盖发光二极管12,而基座28、30通过涂层32露出。发光二极管12在透明衬底372上,反射层374被包括在发光二极管12对面的衬底372上。发光二极管12具有横向的几何结构,其中p型接触24和p型基座28位于每个发光二极管12的顶部。反射层374也反射来自发光二极管的光,使通过衬底372的光受到最小损失。
根据本发明可以对LED芯片制造许多不同的变型。图13显示具有发光二极管402的LED芯片400的另一个实施例,LED402具有在生长衬底404上的n型和p型层406、408之间的有源区405。应当理解,发光二极管402还可以配备减薄的生长衬底,或在生长衬底已被去除之后提供。这些LED还具有n型和p型接触407、409。这些LED 402被划片或逐一分开,且倒装芯片键合到次基台/载体晶片410。导电迹线412形成在次基台/载体晶片410上,每个LED402安装在导电迹线412上,其中第一迹线412a与n型层406电连接,且第二迹线412b与p型层408电连接。可以使用利用已知的技术如溅射沉积的常规迹线,包括铝(Al)或金。LED402通过倒装芯片键合413安装到迹线412,这可以使用已知的材料如金或金/锡焊料或凸点植球按常规的方法安排。
还应当理解,图13以及上面和之后讨论的实施例中的基座,也可以是涂覆有导电层的绝缘材料。在一个实施例中,基座可以包括衬底材料或次基台/载体晶片材料。对于LED芯片400,次基台/载体晶片可以制备有基座,其中每个LED安装在基座之间。导电层可形成在基座上,与导电迹线接触,或使用其它结构与LED接触。还应当理解,基座可以有许多不同的形状和大小,在一个实施例中可以包括反射杯,其中LED安装在所述反射杯中。反射杯可以涂有导电层,以接触导电迹线,或使用其它结构与LED接触。在加入了荧光体的粘结剂涂层的平坦化过程中,反射杯的顶部可被露出以用于接触。在另一个实施例中反射杯可以有自己的在平坦化过程中被露出的基座。
n型基座414形成在第一迹线412a上和p型基座416形成在第二迹线412b上,所述两个基座使用上述的方法形成。荧光体/粘结剂涂层418包含在发光二极管402上,掩埋基座414、416。涂层418然后被平面化以露出基座414、416用于接触,或在其它实施例中可以在涂层中形成凹槽以露出基座414、416。然后可以使用上述的工艺将LED芯片逐一分开。
所述的制造方法与LED芯片400能够允许高质量的、具有期望的发光特性的逐一分开的发光二极管402被选中,以用于安装到晶片404。这种结构也允许将LED 402安装到晶片,其中发光二极管402之间的间距较大,而通过刻蚀材料以形成所述间距,不会浪费宝贵的外延材料。
图14显示根据本发明的LED芯片500的另一实施例,具有安装在载体衬底的逐一分开后的横向几何结构的发光二极管502。每个发光二极管502包括夹在n型和p型层506、508之间的有源区504,它们都先后形成在生长衬底510上。衬底510可以是很多不同的材料,优选的衬底是一个透明的材料,如蓝宝石。这些LED 502被逐一分开,其中保留至少一部分生长衬底510。
这些LED502然后安装到载体衬底512,衬底512在下面。载体衬底512包括在透明衬底516上的第一荧光体/粘结剂涂层514。第一涂层514是粘性的以保持LED 502,或者可以使用额外的粘结材料。
p型接触518形成在p型层508上且n型接触520形成在n型层506上。接触518、520可以包括很多不同的材料,其中优选的材料是反射性的。通过具有反射性,接触518、520反射有源区的光,使载体衬底512成为主要发光表面。p型基座522形成在p型接触518上且n型基座524形成在n型接触520上,如上所述。第二荧光体/粘结剂涂层526形成在发光二极管502上,掩埋基座522、524。如上所述,第二涂层526然后可以被平面化以露出基座522、524。
LED芯片500然后被逐一分开,且这种结构使LED芯片500中的LED502被第一和第二涂层514、526提供的荧光体层所包围。逐一分开后的LED芯片500也可以被封装为一种常规的倒装芯片器件,除了具有第一和第二涂层以提供一个白色发光的LED倒装芯片之外,无需进一步的荧光体工艺。该实施例提供的另一个优点是,能够使用具有期望的发光特性的高质量的逐一分开后的发光二极管502以安装到载体晶片512,使由此所得的LED芯片502具有高质量。发光二极管502还可以安装到发光二极管502之间的间距较大的晶片上,通过刻蚀材料以形成所述间距,不会浪费宝贵的外延材料。
图15a-15d显示了根据本发明的LED芯片600的另一实施例。首先参照图15a,每个发光二极管芯片包括LED 602,每个LED 602具有在n型和p型层606、608之间的有源区604,它们先后形成在生长衬底610上,生长衬底610最好是透明材料,如蓝宝石。发光二极管602具有横向几何结构,其中反射性的n型接触612形成在n型层606上,且反射性的p型接触614形成在p型层608上。n型基座616形成在n型接触612上,且p型基座618形成在p型接触614上。第一荧光体/粘结剂涂层620形成在LED上,最初掩埋基座616、618,然后该涂层被平面化以露出基座。
现在参照图15b,沟槽622形成为穿过衬底610且部分进入涂层620,其中沟槽被安排在发光二极管602之间。可使用多种不同的方法,如通过蚀刻或划片,形成沟槽622。现在参照图15c,第二荧光体/粘结剂涂层624可形成在衬底610的沟槽一侧上,填充沟槽622。如果需要,第二涂层可以被平面化。现在参照图15d,LED芯片600可被逐一分开,其中发光二极管602被第一和第二涂层620、624提供的荧光体层包围。LED芯片600提供了与图14的LED芯片500类似的优点,并提供了优质的倒装芯片器件,它能提供白光发光而不需要额外的荧光体处理。
再次参照图15a和15b,作为形成沟槽622的替代,生长衬底610可以被完全去除以露出n型层606的底部表面。然后第二荧光体/粘结剂涂层624可以在露出的n型层上形成,且在需要时被平面化。
本发明也可用于覆盖单个的LED,而不是形成在LED芯片晶片上的那些LED。在这些实施例中,LED芯片可被逐一分开,然后安装在一个封装或次基台或印制电路板中。LED芯片然后可以根据本发明被涂层和平面化以露出用于接触的基座。
虽然已参考某些优选实施例详细描述了本发明,其它变型也是可能的。因此,本发明的精神和范围不应局限于上文所述的内容。
Claims (23)
1.一种制造发光二极管LED芯片的方法,包括:
提供多个发光二极管;
在所述发光二极管上沉积导电基座,每个所述基座与所述发光二极管之一电气接触;
在所述发光二极管上形成涂层,所述涂层掩埋至少一些所述基座;和
平面化所述涂层,在所述发光二极管上留下至少一些所述涂层,同时露出至少一些所述被掩埋的基座。
2.根据权利要求1的方法,其特征在于所述发光二极管芯片发出白光。
3.根据权利要求1的方法,其特征在于还包括在每个所述发光二极管上沉积一个接触,所述基座形成在所述接触上。
4.根据权利要求1的方法,其特征在于所述发光二极管在衬底上形成。
5.根据权利要求4的方法,其特征在于所述衬底被成形或织构。
6.根据权利要求1的方法,其特征在于所述发光二极管形成在衬底上,
所述方法还包括在平面化上述涂层之后在上述衬底中形成沟槽和形成填充所述沟槽的第二涂层。
7.根据权利要求1的方法,其特征在于还包括在上述涂层上形成表面织构。
8.根据权利要求1的方法,其特征在于还包括在平面化上述涂层之后将所述发光二极管逐一分开。
9.根据权利要求1的方法,其特征在于所述涂层包括加入了荧光体的粘结剂。
10.根据权利要求1的方法,其特征在于所述基座是用凸点植球形成的。
11.根据权利要求1的方法,其特征在于还包括围绕发光二极管的至少一部分形成第二涂层的步骤。
12.根据权利要求11的方法,其特征在于还包括平面化第二涂层的步骤。
13.根据权利要求1的方法,其特征在于还包括在所述平面化的涂层上沉积一个金属垫,以互连至少一些所述基座形成一个发光二极管阵列。
14.一种制造发光二极管芯片的方法,包括:
在载体衬底上倒装芯片键合多个发光二极管;
形成与每个发光二极管电气连接的一个导电基座;
在所述发光二极管上形成毯式涂层,所述涂层掩埋至少一些所述基座;和
平面化所述涂层以露出至少一些所述被掩埋的基座。
15.一种发光二极管LED芯片晶片,其特征在于包括:
多个发光二极管;
多个导电基座,每个基座与所述发光二极管之一电接触;和
至少部分覆盖所述发光二极管的涂层,至少一些所述基座延伸穿过和到达所述涂层的表面且在所述涂层的表面露出。
16.根据权利要求15的发光二极管芯片晶片,其特征在于所述发光二极管在衬底晶片上。
17.根据权利要求15的发光二极管芯片晶片,其特征在于还包括多个接触,每个接触位于一个发光二极管上,至少一些所述基座形成在所述接触上。
18.根据权利要求15的发光二极管芯片晶片,其特征在于所述衬底晶片能够被分为发光二极管芯片。
19.根据权利要求15的发光二极管芯片晶片,其特征在于所述涂层包括加入了荧光体的粘结剂。
20.根据权利要求15的发光二极管芯片晶片,其特征在于所述发光二极管被互连为发光二极管阵列。
21.根据权利要求16的发光二极管芯片晶片,其特征在于还包括与所述衬底晶片形成为一体的反射层。
22.根据权利要求16的发光二极管芯片晶片,其特征在于所述发光二极管形成在衬底上,所述发光二极管芯片晶片还包括在所述衬底中的沟槽和填充所述沟槽的第二涂层。
23.一种发光二极管LED芯片,包括:
一个发光二极管;
与所述发光二极管电气接触的导电基座;和
至少部分覆盖所述发光二极管的涂层,所述基座延伸穿过并到达所述涂层的表面和在所述涂层的表面露出。
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JP2010517290A (ja) | 2010-05-20 |
WO2008115213A8 (en) | 2009-04-30 |
US20080173884A1 (en) | 2008-07-24 |
KR101398655B1 (ko) | 2014-06-19 |
CN102544267B (zh) | 2015-01-28 |
EP2111649A2 (en) | 2009-10-28 |
CN101663767A (zh) | 2010-03-03 |
TW200840092A (en) | 2008-10-01 |
KR20090115156A (ko) | 2009-11-04 |
TWI485877B (zh) | 2015-05-21 |
EP2111649B1 (en) | 2017-09-27 |
WO2008115213A3 (en) | 2008-12-18 |
US9024349B2 (en) | 2015-05-05 |
CN101627481A (zh) | 2010-01-13 |
CN102544267A (zh) | 2012-07-04 |
WO2008115213A2 (en) | 2008-09-25 |
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