JP5433583B2 - ワイヤボンディングのないウェーハ段階のled - Google Patents
ワイヤボンディングのないウェーハ段階のled Download PDFInfo
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- JP5433583B2 JP5433583B2 JP2010534010A JP2010534010A JP5433583B2 JP 5433583 B2 JP5433583 B2 JP 5433583B2 JP 2010534010 A JP2010534010 A JP 2010534010A JP 2010534010 A JP2010534010 A JP 2010534010A JP 5433583 B2 JP5433583 B2 JP 5433583B2
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- 239000004065 semiconductor Substances 0.000 claims description 105
- 239000000758 substrate Substances 0.000 claims description 69
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 33
- 125000006850 spacer group Chemical group 0.000 claims description 18
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 291
- 239000000463 material Substances 0.000 description 40
- 238000000034 method Methods 0.000 description 31
- 238000004519 manufacturing process Methods 0.000 description 26
- 238000000605 extraction Methods 0.000 description 20
- 230000007480 spreading Effects 0.000 description 19
- 238000003892 spreading Methods 0.000 description 19
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 15
- 229910010271 silicon carbide Inorganic materials 0.000 description 15
- 230000008569 process Effects 0.000 description 14
- 229910002601 GaN Inorganic materials 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 8
- 150000004767 nitrides Chemical class 0.000 description 7
- 239000010949 copper Substances 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 238000004806 packaging method and process Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 230000008878 coupling Effects 0.000 description 5
- 239000002800 charge carrier Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 3
- 239000002775 capsule Substances 0.000 description 3
- 238000000295 emission spectrum Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000011358 absorbing material Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000008393 encapsulating agent Substances 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 235000005811 Viola adunca Nutrition 0.000 description 1
- 240000009038 Viola odorata Species 0.000 description 1
- 235000013487 Viola odorata Nutrition 0.000 description 1
- 235000002254 Viola papilionacea Nutrition 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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Description
Claims (8)
- 半導体装置であって、
n型半導体層と、
p型半導体層と、
前記n型層と前記p型層との間に挟まれた活性領域と、
前記半導体装置の主要発光面と反対側の面上へ接触可能なリードを有し、前記p型層に電気的に接続されたp電極と、
前記主要発光面と反対側の面上へ接触可能なリードを有し、前記n型層に電気的に接続されたn電極と、
前記n型半導体層と接触し、前記n型半導体層と前記n電極との間に電気的接続をもたらすnパッドと、
前記p型半導体層と接触し、前記p型半導体層と前記p電極との間に電気的接続をもたらすpパッドと、
を備え、
前記n型層の頂部の外側面は、階段形状のnパッドで前記n電極に電気的に接続され、
前記p電極および前記n電極は、前記半導体装置用の主要な機械的支持体をもたらすことができるほど十分に厚く、
前記n型層、前記活性領域および前記p型層の実質的にすべては、前記p電極上に配置されており、かつ、前記pパッドによって前記p電極から分離されていることを特徴とする半導体装置。 - 前記n電極および前記p電極の前記リードの反対側に配置された蛍光体層であって、前記主要発光性面を備える、蛍光体層をさらに備えることを特徴とする請求項1に記載の半導体装置。
- 前記p電極から前記n電極を電気的に絶縁し、前記活性領域から前記n電極および前記p電極の両方を電気的に絶縁するように配置された少なくとも1つのスペーサ要素をさらに備えることを特徴とする請求項1に記載の半導体装置。
- 前記p電極の厚さは少なくとも20μmであり、前記n電極の厚さは少なくとも20μmであることを特徴とする請求項1に記載の半導体装置。
- 前記p電極の厚さは少なくとも50μmであり、前記n電極の厚さは少なくとも50μmであることを特徴とする請求項1に記載の半導体装置。
- 前記n型層、前記活性領域および前記p型層の実質的にすべては、前記n電極と前記主要発光面との間に配置されることを特徴とする請求項1に記載の半導体装置。
- 半導体装置であって、
n型層とp型層との間に挟まれた活性領域を備えるフリップチップLED(発光ダイオード)構造体と、
前記n型層に電気的に結合されたn電極と、
前記n型層と接触し、前記n型層と前記n電極との間に電気的接続をもたらすnパッドと、
前記p型層に電気的に結合されたp電極と、
前記p型層と接触し、前記p型層と前記p電極との間に電気的接続をもたらすpパッドと、
を備え、
前記n型層の頂部の外側面は、階段形状のnパッドで前記n電極に電気的に接続されており、
前記n電極および前記p電極は、前記半導体装置の、前記n型層の反対側に露出して、前記半導体装置は面へ取付け可能であり、
前記n型層、前記活性領域および前記p型層の実質的にすべては、前記p電極上に配置されており、かつ、前記pパッドによって前記p電極から分離されていることを特徴とする半導体装置。 - 半導体装置であって、
n型層とp型層との間に挟まれた活性領域を備える発光構造体であって、前記n型層の前記p型層と反対側の面が改造されている、発光構造体と、
前記n型層に電気的に結合されたn電極と、
前記n型層と接触し、前記n型層と前記n電極との間に電気的接続をもたらすnパッドと、
前記p型層に電気的に結合されたp電極と、
前記p型層と接触し、前記p型層と前記p電極との間に電気的接続をもたらすpパッドと、
成長基板の介在なしで前記n型層の上にある波長変換層と
を備え、
前記n型層の頂部の外側面は、階段形状のnパッドで前記n電極に電気的に接続されており、
前記n型層、前記活性領域および前記p型層の実質的にすべては、前記p電極上に配置されており、かつ、前記pパッドによって前記p電極から分離されていることを特徴とする半導体装置。
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2007
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- 2008-09-11 CN CN2008801245954A patent/CN101933166B/zh active Active
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JP5767184B2 (ja) | 2015-08-19 |
KR20100093565A (ko) | 2010-08-25 |
WO2009064330A2 (en) | 2009-05-22 |
JP2013038438A (ja) | 2013-02-21 |
CN101933166B (zh) | 2013-10-02 |
US10199360B2 (en) | 2019-02-05 |
KR101503558B1 (ko) | 2015-03-17 |
WO2009064330A3 (en) | 2009-09-24 |
US20170179088A1 (en) | 2017-06-22 |
JP2011503898A (ja) | 2011-01-27 |
US9634191B2 (en) | 2017-04-25 |
US20090121241A1 (en) | 2009-05-14 |
CN101933166A (zh) | 2010-12-29 |
EP2220692A2 (en) | 2010-08-25 |
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